MBR20150SCT-G1 [BCDSEMI]
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER; 高压功率肖特基整流器
| 型号： | MBR20150SCT-G1 |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| 文件： | 总10页 (文件大小：424K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20150SC
General Description
Main Product Characteristics
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
IF(AV)
VRRM
TJ
2×10A
150V
150°C
VF(max)
0.75V
The MBR20150SC is available in standard
TO-220F-3, TO-220-3 and TO-220-3 (2) packages.
Mechanical Characteristics
•
•
•
•
Case: Epoxy, Molded
Features
Epoxy Meets UL 94V-0@ 0.125in.
Weight (Approximately): 1.9Grams
Finish: All External Surfaces Corrosion
Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
•
•
•
•
•
High Surge Capacity
150°C Operating Junction Temperature
20A Total (10A Per Diode Leg)
Guard-ring for Stress Protection
Pb-free Packages are available
•
•
Applications
•
•
•
Power Supply − Output Rectification
Power Management
Instrumentation
TO-220F-3
TO-220-3 (Optional)
TO-220-3 (2)
Figure 1. Package Types of MBR20150SC
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20150SC
Pin Configuration
T Package
(TO-220-3) (Optional)
(TO-220-3 (2))
A2
K
3
2
1
A1
TF Package
(TO-220F-3)
Figure 2. Pin Configuration of MBR20150SC (Top View)
Figure 3. Internal Structure of MBR20150SC
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20150SC
Ordering Information
MBR20150SC
-
E1: Lead Free
Circuit Type
Package
T: TO-220-3 (2)
TO-220-3 (Optional)
TF: TO-220F-3
G1: Green
Blank: Tube
Part Number
Marking ID
Packin
g Type
Package
Lead Free
Green
Lead Free
Green
MBR20150SCT-
E1
MBR20150SCT-
G1
MBR20150SCT-
E1
MBR20150SCT-
G1
TO-220-3 (2)
TO-220F-3
Tube
Tube
MBR20150SCTF MBR20150SCTF MBR20150SCTF MBR20150SCTF
-E1 -G1 -E1 -G1
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
150
V
Average Rectified Forward Current
(Rated VR) TC=134°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20kHz) TC=133°C
Non repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Half Wave, Single
Phase, 60Hz)
IF(AV)
IFRM
10
20
A
A
IFSM
150
A
Operating Junction Temperature Range (Note 2)
Storage Temperature Range
TJ
150
°C
°C
TSTG
dv/dt
-55 to 150
10000
Voltage Rate of Change (Rated VR)
V/µs
ESD (Machine Model=C)
ESD (Human Body Model=3B)
>400
>8000
V
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ <
1/θJA.
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
3
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20150SC
Recommended Operating Conditions
Parameter
Symbol
Condition
Value
Unit
TO-220-3/
TO-220-3 (2)
2.0
Junction to Case
θJC
TO-220F-3
3.0
Maximum Thermal Resistance
°C/W
TO-220-3/
TO-220-3 (2)
60
60
Junction
Ambient
to
θJA
TO-220F-3
Electrical Characteristics
Parameter
Symbol
Conditions
Value
Unit
Maximum Instantaneous Forward
Voltage Drop (Note 3)
0.9
IF=10A, TC=25°C
V
VF
0.75
20
IF=10A, TC=125°C
Rated
DC
Voltage,
Maximum Instantaneous Reverse
Current (Note 3)
TC=125°C
mA
IR
Rated
TC=25°C
DC
Voltage,
0.05
Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
4
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20150SC
Typical Performance Characteristics
100
10
1
0.1
250C
1250C
1500C
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VF,Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Voltage Per Diode
10000
1000
100
10
1
250C
1250C
1500C
0.1
0.01
0
20
40
60
80
100
120
140
160
VR, Reverse Voltage (V)
Figure 5. Typical Reverse Current Per Diode
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20150SC
Typical Performance Characteristics (Continued)
20
18
16
14
12
10
8
6
4
2
0
115
120
125
130
135
140
145
150
155
160
Case Temperature (0C)
Figure6. Average Forward Current vs. Case Temperature (Square, Per Diode)
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
6
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20150SC
Mechanical Dimensions
TO-220-3
Unit: mm(inch)
(Optional)
9.660(0.380)
2.580(0.102)
3.380(0.133)
10.660(0.420)
3.560(0.140)
4.060(0.160)
0.550(0.022)
1.350(0.053)
0.200(0.008)
1.500(0.059)
3.560(0.140)
4.820(0.190)
2.080(0.082)
2.880(0.113)
7°
0.381(0.015)
1.160(0.046)
1.760(0.069)
60°
0.813(0.032)
8.763(0.345)
0.381(0.015)
2.540(0.100)
0.356(0.014)
0.406(0.016)
2.540(0.100)
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
7
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20150SC
Mechanical Dimensions (Continued)
TO-220-3 (2)
Unit: mm(inch)
9.800(0.386)
10.200(0.402)
3.560(0.140)
3.640(0.143)
1.620(0.064)
1.820(0.072)
0.600(0.024)
REF
1.200(0.047)
1.400(0.055)
1.200(0.047)
1.400(0.055)
4.400(0.173)
4.600(0.181)
2.200(0.087)
2.500(0.098)
3°
3°
3.000(0.118)
1.170(0.04)
1.390(0.05)
REF
0.700(0.028)
0.900(0.035)
0.400(0.016)
0.600(0.024)
2.540(0.100)
REF
2.500.100)
RF
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
8
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR20150SC
Mechanical Dimensions (Continued)
TO-220F-3
Unit: mm(inch)
9.700(0.382)
10.300(0.406)
3.000(0.119)
3.400(0.134)
6.900(0.272)
7.100(0.280)
3.550(0.140)
2.350(0.093)
2.900(0.114)
3.000(0.119)
3.370(0.133)
3.900(0.154)
14.700(0.579)
16.000(0.630)
4.300(0.169)
4.900(0.193)
1.000(0.039)
1.400(0.055)
1.100(0.043)
1.500(0.059)
12.500(0.492)
13.500(0.531)
0.550(0.022)
0.900(0.035)
0.450(0.018)
0.600(0.024)
2.540(0.100)
2.540(0.100)
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
9
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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- Wafer Fab
BCD Semiconductor Manufacturing Limited
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
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