AP2202R-3.3TR [BCDSEMI]
150mA RF ULDO REGULATOR; 150毫安RF ULDO稳压器
| 型号： | AP2202R-3.3TR |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | 150mA RF ULDO REGULATOR |
| 文件： | 总33页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
150mA RF ULDO REGULATOR
AP2202
General Description
Features
The AP2202 is a 150mA ULDO regulator which pro-
vides very low noise, ultra low dropout voltage
(typically 165mV at 150mA), very low standby current
(1µA maximum) and excellent power supply ripple
rejection (PSRR 75dB at 100Hz) in battery powered
applications, such as handsets and PDAs and in noise
sensitive applications, such as RF electronics.
·
Up to 150mA Output Current
Low Standby Current
·
·
Low Dropout Voltage: V
=165mV at 150mA
DROP
·
·
High Output Accuracy: ±1%
Good Ripple Rejection Ability: 75dB at 100Hz
and I =100µA
OUT
·
·
·
·
·
·
Tight Load and Line Regulation
Low Temperature Coefficient
Over Current Protection
Thermal Protection
Reverse-battery Protection
Logic-controlled Enable
The AP2202 also features logic compatible enable/
shutdown control inputs, a low power shutdown mode
for extended battery life, over current protection, over
temperature protection, as well as reversed-battery pro-
tection.
The AP2202 has adjustable, 2.5V, 2.6V, 2.7V, 2.8V,
2.9V, 3.0V, 3.3V and 4.0V versions.
Applications
The AP2202 is available in space saving SOT-23-5 and
SOT-89-3 packages.
·
·
·
·
·
·
·
Cellular Phones
Cordless Phones
Digital Still Cameras
Wireless Communicators
PDAs / Palmtops
PC Mother Board
Consumer Electronics
SOT-23-5
SOT-89-3
Figure 1. Package Types of AP2202
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
1
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Pin Configuration
K Package
(SOT-23-5)
VOUT
VIN
GND
EN
1
2
5
4
VOUT
VIN
GND
EN
1
2
5
4
3
ADJ
3
BYP
R Package
(SOT-89-3)
VIN
3
2
1
GND (TAB)
VOUT
Figure 2. Pin Configuration of AP2202 (Top View)
Pin Description
Pin Number
Function
Pin Name
SOT-23-5
SOT-89-3
1
2
3
3
2
VIN
GND
EN
Input voltage
Ground (TAB for SOT-89-3)
Enable input: CMOS or TTL compatible input. Logic high=enable, logic
low=shutdown
4
5
BYP/ADJ
VOUT
Bypass capacitor for low noise operation/Adjust output
Regulated output voltage
1
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
2
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Functional Block Diagram
5 (1)
1 (3)
VIN
VOUT
4
BYP
+
-
Bandgap
Ref.
3
EN
A (B)
A for SOT-23-5
B for SOT-89-3
Current Limit
Thermal Shutdown
2 (2)
GND
Fixed Regulator
1
5
VIN
VOUT
4
ADJ
+
Bandgap
Ref.
-
3
EN
Current Limit
Thermal Shutdown
2
GND
Adjustable Regulator
Figure 3. Functional Block Diagram of AP2202
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
3
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Ordering Information
AP2202
-
E1: Lead Free
Blank: Tin Lead
Circuit Type
TR: Tape and Reel
Package
ADJ: Adjustable Output
2.5: Fixed Output 2.5V
2.6: Fixed Output 2.6V
2.7: Fixed Output 2.7V
2.8: Fixed Output 2.8V
2.9: Fixed Output 2.9V
3.0: Fixed Output 3.0V
3.3: Fixed Output 3.3V
4.0: Fixed Output 4.0V
K: SOT-23-5
R: SOT-89-3
Part Number
Tin Lead Lead Free
AP2202K-ADJTR AP2202K-ADJTRE1
Marking ID
Temperature
Range
Package
Packing Type
Tin Lead
Lead Free
E2C
K2C
K2D
K2E
K2F
K2G
K2H
K2I
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
AP2202K-2.5TR
AP2202K-2.6TR
AP2202K-2.7TR
AP2202K-2.8TR
AP2202K-2.9TR
AP2202K-3.0TR
AP2202K-3.3TR
AP2202K-4.0TR
AP2202R-3.3TR
AP2202K-2.5TRE1
AP2202K-2.6TRE1
AP2202K-2.7TRE1
AP2202K-2.8TRE1
AP2202K-2.9TRE1
AP2202K-3.0TRE1
AP2202K-3.3TRE1
AP2202K-4.0TRE1
AP2202R-3.3TRE1
E2D
E2E
E2F
-40 to 125oC
SOT-23-5
SOT-89-3
E2G
E2H
E2I
K2L
K2S
R22B
E2L
E2S
-40 to 125oC
E22B
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
4
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
VIN
Value
Unit
V
Supply Input Voltage
Enable Input Voltage
Power Dissipation
15
VEN
PD
15
V
Internally Limited (Thermal Protection)
W
oC
oC
Lead Temperature (Soldering, 10sec)
Junction Temperature
Storage Temperature
ESD (Machine Model)
TLEAD
TJ
260
150
oC
V
TSTG
-65 to 150
200
SOT-23-5
SOT-89-3
200
165
oC/W
Thermal Resistance (No Heatsink)
θJA
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
VIN
Min
2.5
0
Max
13.2
13.2
125
Unit
V
Supply Input Voltage
Enable Input Voltage
Operating Junction Temperature
VEN
TJ
V
oC
-40
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
5
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics
AP2202-ADJ Electrical Characteristics
VIN=VOUT+1V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC
(note 2), unless otherwise specified.
Parameter
Symbol
∆VOUT/VOUT
Conditions
Min
-1
Typ
Max
Unit
Variation from specified
VOUT
1
Output Voltage Accuracy
%
-2
2
Output Voltage
Temperature Coefficient
(Note 3)
µV/oC
120
∆VOUT/∆T
0.004 0.012
VRLINE
VIN=VOUT+1V to 13.2V
Line Regulation
%/V
0.05
Load Regulation
(Note 4)
IOUT=0.1mA to 150mA
0.02
15
0.2
0.5
VRLOAD
%
50
IOUT=100µA
IOUT=50mA
IOUT=100mA
IOUT=150mA
70
110
140
165
0.01
95
150
230
250
300
275
350
1
VDROP
Dropout Voltage (Note 5)
mV
VEN≤0.4V (shutdown)
VEN≤0.18V (shutdown)
ISTD
Standby Current
µA
µA
5
130
150
140
160
600
800
1000
1500
1900
2500
VEN≥2.0V, IOUT=0µA
VEN≥2.0V, IOUT=100µA
VEN≥2.0V, IOUT=50mA
VEN≥2.0V, IOUT=100mA
VEN≥2.0V, IOUT=150mA
98
Ground Pin Current
(Note 6)
350
600
1300
IGND
Ripple Rejection
Current Limit
PSRR
ILIMIT
frequency=100Hz, IOUT=100µA
75
dB
VOUT=0V
320
550
mA
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
eno
Output Noise
260
nV / Hz
Enable Input Logic-Low
Voltage
0.4
VIL
Regulator shutdown
V
0.18
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
6
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-ADJ Electrical Characteristics
VIN=VOUT+1V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC
(note 2), unless otherwise specified.
Parameter
Symbol
Conditions
Min
2.0
Typ
Max
Unit
Enable Input Logic-High
Voltage
VIH
Regulator enabled
V
Enable Input Logic-Low
Current
VIL≤0.4V
VIL≤0.18V
VIH≥2.0V
VIH≥2.0V
0.01
5
1
2
IIL
IIH
µA
µA
Enable Input Logic-High
Current
20
25
≤TJ≤
Note 2: Specifications in bold type are limited to -40oC 125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-
40oC 125oC) below its nominal value measured at 1V differential.
≤TJ≤
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
7
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-2.5 Electrical Characteristics
VIN=3.5V, IOUT=100µA, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
-1
Typ
Max
Unit
Variation from specified
VOUT
1
∆VOUT/VOUT
Output Voltage Accuracy
%
-2
2
µV/oC
120
48
1
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T
ppm/oC
(∆VOUT/VOUT)/∆T
3
VRLINE
VIN=3.5V to 13.2V
Line Regulation
mV
mV
13
5
Load Regulation
(Note 4)
IOUT=0.1mA to 150mA
1
VRLOAD
13
50
70
15
IOUT=100µA
IOUT=50mA
IOUT=100mA
IOUT=150mA
110
140
165
0.01
95
150
230
250
300
275
350
1
VDROP
Dropout Voltage (Note 5)
mV
VEN≤0.4V (shutdown)
VEN≤0.18V (shutdown)
ISTD
Standby Current
µA
5
130
150
140
160
600
800
1000
1500
1900
2500
VEN≥2.0V, IOUT=0µA
VEN≥2.0V, IOUT=100µA
VEN≥2.0V, IOUT=50mA
VEN≥2.0V, IOUT=100mA
VEN≥2.0V, IOUT=150mA
98
Ground Pin Current
(Note 6)
350
600
1300
IGND
µA
Ripple Rejection
Current Limit
PSRR
ILIMIT
frequency=100Hz, IOUT=100µA
75
dB
VOUT=0V
320
550
mA
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
eno
Output Noise
260
nV / Hz
Enable Input Logic-Low
Voltage
0.4
VIL
Regulator shutdown
V
0.18
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
8
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-2.5 Electrical Characteristics
VIN=3.5V, IOUT=100µA, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
2.0
Typ
Max
Unit
Enable Input Logic-High
Voltage
VIH
Regulator enabled
V
Enable Input Logic-Low
Current
VIL≤0.4V
VIL≤0.18V
VIH≥2.0V
VIH≥2.0V
0.01
5
1
IIL
IIH
µA
µA
2
Enable Input Logic-High
Current
20
25
≤TJ≤
Note 2: Specifications in bold type are limited to -40oC 125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load reg-
ulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-
40oC 125oC) below its nominal value measured at 1V differential.
≤TJ≤
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
9
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-2.6 Electrical Characteristics
VIN=3.6V, IOUT=100µA, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
-1
Typ
Max
Unit
Variation from specified
VOUT
1
∆VOUT/VOUT
Output Voltage Accuracy
%
-2
2
µV/oC
120
46
1
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T
ppm/oC
(∆VOUT/VOUT)/∆T
3
VRLINE
VIN=3.6V to 13.2V
Line Regulation
mV
mV
13
6
Load Regulation
(Note 4)
IOUT=0.1mA to 150mA
1
VRLOAD
14
15
50
IOUT=100µA
IOUT=50mA
IOUT=100mA
IOUT=150mA
70
110
140
165
0.01
95
150
230
250
300
275
350
1
VDROP
Dropout Voltage (Note 5)
mV
VEN≤0.4V (shutdown)
VEN≤0.18V (shutdown)
ISTD
Standby Current
µA
5
130
150
140
160
600
800
1000
1500
1900
2500
VEN≥2.0V, IOUT=0µA
VEN≥2.0V, IOUT=100µA
VEN≥2.0V, IOUT=50mA
VEN≥2.0V, IOUT=100mA
VEN≥2.0V, IOUT=150mA
98
Ground Pin Current
(Note 6)
350
600
1300
IGND
µA
Ripple Rejection
Current Limit
PSRR
ILIMIT
frequency=100Hz, IOUT=100µA
75
dB
VOUT=0V
320
550
mA
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
eno
Output Noise
260
nV / Hz
Enable Input Logic-Low
Voltage
0.4
VIL
Regulator shutdown
V
0.18
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
10
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-2.6 Electrical Characteristics
VIN=3.6V, IOUT=100µA, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
2.0
Typ
Max
Unit
Enable Input Logic-High
Voltage
VIH
Regulator enabled
V
Enable Input Logic-Low
Current
VIL≤0.4V
VIL≤0.18V
VIH≥2.0V
VIH≥2.0V
0.01
5
1
IIL
IIH
µA
µA
2
Enable Input Logic-High
Current
20
25
≤TJ≤
Note 2: Specifications in bold type are limited to -40oC 125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-
40oC 125oC) below its nominal value measured at 1V differential.
≤TJ≤
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
11
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-2.7 Electrical Characteristics
VIN=3.7V, IOUT=100µA, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
-1
Typ
Max
Unit
Variation from specified
VOUT
1
∆VOUT/VOUT
Output Voltage Accuracy
%
-2
2
µV/oC
120
44.4
1
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T
ppm/oC
(∆VOUT/VOUT)/∆T
4
VRLINE
VIN=3.7V to 13.2V
Line Regulation
mV
mV
14
6
Load Regulation
(Note 4)
IOUT=0.1mA to 150mA
1
VRLOAD
14
15
50
IOUT=100µA
IOUT=50mA
IOUT=100mA
IOUT=150mA
70
110
140
165
0.01
95
150
230
250
300
275
350
1
VDROP
Dropout Voltage (Note 5)
mV
VEN≤0.4V (shutdown)
VEN≤0.18V (shutdown)
ISTD
Standby Current
µA
5
130
150
140
160
600
800
1000
1500
1900
2500
VEN≥2.0V, IOUT=0µA
VEN≥2.0V, IOUT=100µA
VEN≥2.0V, IOUT=50mA
VEN≥2.0V, IOUT=100mA
VEN≥2.0V, IOUT=150mA
98
Ground Pin Current
(Note 6)
350
600
1300
IGND
µA
Ripple Rejection
Current Limit
PSRR
ILIMIT
frequency=100Hz, IOUT=100µA
75
dB
VOUT=0V
320
550
mA
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
eno
Output Noise
260
nV / Hz
Enable Input Logic-Low
Voltage
0.4
VIL
Regulator shutdown
V
0.18
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
12
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-2.7 Electrical Characteristics
VIN=3.7V, IOUT=100µA, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
2.0
Typ
Max
Unit
Enable Input Logic-High
Voltage
VIH
Regulator enabled
V
Enable Input Logic-Low
Current
VIL≤0.4V
VIL≤0.18V
VIH≥2.0V
VIH≥2.0V
0.01
5
1
IIL
IIH
µA
µA
2
Enable Input Logic-High
Current
20
25
≤TJ≤
Note 2: Specifications in bold type are limited to -40oC 125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-
40oC 125oC) below its nominal value measured at 1V differential.
≤TJ≤
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
13
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-2.8 Electrical Characteristics
VIN=3.8V, IOUT=100µA, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
-1
Typ
Max
Unit
Variation from specified
VOUT
1
∆VOUT/VOUT
Output Voltage Accuracy
%
-2
2
µV/oC
120
42.8
1
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T
ppm/oC
(∆VOUT/VOUT)/∆T
4
VRLINE
VIN=3.8V to 13.2V
Line Regulation
mV
mV
14
6
Load Regulation
(Note 4)
IOUT=0.1mA to 150mA
1
VRLOAD
14
50
70
15
IOUT=100µA
IOUT=50mA
IOUT=100mA
IOUT=150mA
110
140
165
0.01
95
150
230
250
300
275
350
1
VDROP
Dropout Voltage (Note 5)
mV
VEN≤0.4V (shutdown)
VEN≤0.18V (shutdown)
ISTD
Standby Current
µA
5
130
150
140
160
600
800
1000
1500
1900
2500
VEN≥2.0V, IOUT=0µA
VEN≥2.0V, IOUT=100µA
VEN≥2.0V, IOUT=50mA
VEN≥2.0V, IOUT=100mA
VEN≥2.0V, IOUT=150mA
98
Ground Pin Current
(Note 6)
350
600
1300
IGND
µA
Ripple Rejection
Current Limit
PSRR
ILIMIT
frequency=100Hz, IOUT=100µA
75
dB
VOUT=0V
320
550
mA
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
eno
Output Noise
260
nV / Hz
Enable Input Logic-Low
Voltage
0.4
VIL
Regulator shutdown
V
0.18
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
14
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-2.8 Electrical Characteristics
VIN=3.8V, IOUT=100µA, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
2.0
Typ
Max
Unit
Enable Input Logic-High
Voltage
VIH
Regulator enabled
V
Enable Input Logic-Low
Current
VIL≤0.4V
VIL≤0.18V
VIH≥2.0V
VIH≥2.0V
0.01
5
1
IIL
IIH
µA
µA
2
Enable Input Logic-High
Current
20
25
≤TJ≤
Note 2: Specifications in bold type are limited to -40oC 125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-
40oC 125oC) below its nominal value measured at 1V differential.
≤TJ≤
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
15
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-2.9 Electrical Characteristics
VIN=3.9V, IOUT=100µA, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
-1
Typ
Max
Unit
Variation from specified
VOUT
1
∆VOUT/VOUT
Output Voltage Accuracy
%
-2
2
µV/oC
120
41.3
1
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T
ppm/oC
(∆VOUT/VOUT)/∆T
4
VRLINE
VIN=3.9V to 13.2V
Line Regulation
mV
mV
14
7
Load Regulation
(Note 4)
IOUT=0.1mA to 150mA
1
VRLOAD
15
50
70
15
IOUT=100µA
IOUT=50mA
IOUT=100mA
IOUT=150mA
110
140
165
0.01
95
150
230
250
300
275
350
1
VDROP
Dropout Voltage (Note 5)
mV
VEN≤0.4V (shutdown)
VEN≤0.18V (shutdown)
ISTD
Standby Current
µA
5
130
150
140
160
600
800
1000
1500
1900
2500
VEN≥2.0V, IOUT=0µA
VEN≥2.0V, IOUT=100µA
VEN≥2.0V, IOUT=50mA
VEN≥2.0V, IOUT=100mA
VEN≥2.0V, IOUT=150mA
98
Ground Pin Current
(Note 6)
350
600
1300
IGND
µA
Ripple Rejection
Current Limit
PSRR
ILIMIT
frequency=100Hz, IOUT=100µA
75
dB
VOUT=0V
320
550
mA
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
eno
Output Noise
260
nV / Hz
Enable Input Logic-Low
Voltage
0.4
VIL
Regulator shutdown
V
0.18
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
16
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-2.9 Electrical Characteristics
VIN=3.9V, IOUT=100µA, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
2.0
Typ
Max
Unit
Enable Input Logic-High
Voltage
VIH
Regulator enabled
V
Enable Input Logic-Low
Current
VIL≤0.4V
VIL≤0.18V
VIH≥2.0V
VIH≥2.0V
0.01
5
1
IIL
IIH
µA
µA
2
Enable Input Logic-High
Current
20
25
≤TJ≤
Note 2: Specifications in bold type are limited to -40oC 125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-
40oC 125oC) below its nominal value measured at 1V differential.
≤TJ≤
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
17
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-3.0 Electrical Characteristics
VIN=4V, IOUT=100
µ
A, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
-1
Typ
Max
Unit
Variation from specified
VOUT
1
∆VOUT/VOUT
∆VOUT/∆T
Output Voltage Accuracy
%
-2
2
µV/oC
120
40
1
Output Voltage
Temperature Coefficient
(Note 3)
ppm/oC
(∆VOUT/VOUT)/∆T
4
VRLINE
VIN=4V to 13.2V
Line Regulation
mV
mV
14
7
Load Regulation
(Note 4)
IOUT=0.1mA to 150mA
1
VRLOAD
VDROP
ISTD
15
50
70
15
IOUT=100µA
IOUT=50mA
IOUT=100mA
IOUT=150mA
110
140
165
0.01
95
150
230
250
300
275
350
1
Dropout Voltage (Note 5)
mV
VEN≤0.4V (shutdown)
VEN≤0.18V (shutdown)
Standby Current
µA
5
130
150
140
160
600
800
1000
1500
1900
2500
VEN≥2.0V, IOUT=0µA
VEN≥2.0V, IOUT=100µA
VEN≥2.0V, IOUT=50mA
VEN≥2.0V, IOUT=100mA
VEN≥2.0V, IOUT=150mA
98
Ground Pin Current
(Note 6)
350
600
1300
IGND
µA
Ripple Rejection
Current Limit
PSRR
ILIMIT
frequency=100Hz, IOUT=100µA
75
dB
VOUT=0V
320
550
mA
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
eno
Output Noise
260
nV / Hz
Enable Input Logic-Low
Voltage
0.4
VIL
Regulator shutdown
V
0.18
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
18
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-3.0 Electrical Characteristics
VIN=4V, IOUT=100
µ
A, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
2.0
Typ
Max
Unit
Enable Input Logic-High
Voltage
VIH
Regulator enabled
V
Enable Input Logic-Low
Current
VIL≤0.4V
VIL≤0.18V
VIH≥2.0V
VIH≥2.0V
0.01
5
1
2
IIL
IIH
µA
µA
Enable Input Logic-High
Current
20
25
≤TJ≤
Note 2: Specifications in bold type are limited to -40oC 125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-
40oC 125oC) below its nominal value measured at 1V differential.
≤TJ≤
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
19
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-3.3 Electrical Characteristics
VIN=4.3V, IOUT=100µA, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
-1
Typ
Max
Unit
Variation from specified
VOUT
1
∆VOUT/VOUT
Output Voltage Accuracy
%
-2
2
µV/oC
120
36.3
1
Output Voltage
Temperature Coefficient
(Note 3)
∆VOUT/∆T
ppm/oC
(∆VOUT/VOUT)/∆T
5
VRLINE
VIN=4.3V to 13.2V
Line Regulation
mV
mV
15
8
Load Regulation
(Note 4)
IOUT=0.1mA to 150mA
1
VRLOAD
17
15
50
IOUT=100µA
IOUT=50mA
IOUT=100mA
IOUT=150mA
70
110
140
165
0.01
95
150
230
250
300
275
350
1
VDROP
Dropout Voltage (Note 5)
mV
VEN≤0.4V (shutdown)
VEN≤0.18V (shutdown)
ISTD
Standby Current
µA
5
130
150
140
160
600
800
1000
1500
1900
2500
VEN≥2.0V, IOUT=0µA
VEN≥2.0V, IOUT=100µA
VEN≥2.0V, IOUT=50mA
VEN≥2.0V, IOUT=100mA
VEN≥2.0V, IOUT=150mA
98
Ground Pin Current
(Note 6)
350
600
1300
IGND
µA
Ripple Rejection
Current Limit
PSRR
ILIMIT
frequency=100Hz, IOUT=100µA
75
dB
VOUT=0V
320
550
mA
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
eno
Output Noise
260
nV / Hz
Enable Input Logic-Low
Voltage
0.4
VIL
Regulator shutdown
V
0.18
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
20
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-3.3 Electrical Characteristics
VIN=4.3V, IOUT=100µA, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
2.0
Typ
Max
Unit
Enable Input Logic-High
Voltage
VIH
Regulator enabled
V
Enable Input Logic-Low
Current
VIL≤0.4V
VIL≤0.18V
VIH≥2.0V
VIH≥2.0V
0.01
5
1
IIL
IIH
µA
µA
2
Enable Input Logic-High
Current
20
25
≤TJ≤
Note 2: Specifications in bold type are limited to -40oC 125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-
40oC 125oC) below its nominal value measured at 1V differential.
≤TJ≤
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
21
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-4.0 Electrical Characteristics
VIN=5V, IOUT=100
µ
A, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
-1
Typ
Max
Unit
Variation from specified
VOUT
1
∆VOUT/VOUT
∆VOUT/∆T
Output Voltage Accuracy
%
-2
2
µV/oC
120
30
1
Output Voltage
Temperature Coefficient
(Note 3)
ppm/oC
(∆VOUT/VOUT)/∆T
6
VRLINE
VIN=5V to 13.2V
Line Regulation
mV
mV
17
9
Load Regulation
(Note 4)
IOUT=0.1mA to 150mA
1
VRLOAD
VDROP
ISTD
20
50
70
15
IOUT=100µA
IOUT=50mA
IOUT=100mA
IOUT=150mA
110
140
165
0.01
95
150
230
250
300
275
350
1
Dropout Voltage (Note 5)
mV
VEN≤0.4V (shutdown)
VEN≤0.18V (shutdown)
Standby Current
µA
5
130
150
140
160
600
800
1000
1500
1900
2500
VEN≥2.0V, IOUT=0µA
VEN≥2.0V, IOUT=100µA
VEN≥2.0V, IOUT=50mA
VEN≥2.0V, IOUT=100mA
VEN≥2.0V, IOUT=150mA
98
Ground Pin Current
(Note 6)
350
600
1300
IGND
µA
Ripple Rejection
Current Limit
PSRR
ILIMIT
frequency=100Hz, IOUT=100µA
75
dB
VOUT=0V
320
550
mA
IOUT=50mA, COUT=2.2µF,
100pF from BYP to GND
eno
Output Noise
260
nV / Hz
Enable Input Logic-Low
Voltage
0.4
VIL
Regulator shutdown
V
0.18
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
22
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Electrical Characteristics (Continued)
AP2202-4.0 Electrical Characteristics
VIN=5V, IOUT=100
µ
A, CIN=1.0
µ
F, COUT=2.2µF, VEN≥ ≤TJ≤
2.0V, TJ=25oC, Bold typeface applies over -40oC 125oC (note 2),
unless otherwise specified.
Parameter
Symbol
Conditions
Min
2.0
Typ
Max
Unit
Enable Input Logic-High
Voltage
VIH
Regulator enabled
V
Enable Input Logic-Low
Current
VIL≤0.4V
VIL≤0.18V
VIH≥2.0V
VIH≥2.0V
0.01
5
1
2
IIL
IIH
µA
µA
Enable Input Logic-High
Current
20
25
≤TJ≤
Note 2: Specifications in bold type are limited to -40oC 125oC. Limits over temperature are guaranteed by design, but not
tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-
40oC 125oC) below its nominal value measured at 1V differential.
≤TJ≤
Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
23
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Typical Performance Characteristics
2.900
350
300
250
200
150
100
50
IOUT=50mA
IOUT=100mA
AP2202-2.8
2.875
VIN=3.8V, IOUT=10mA
IOUT=150mA
CIN=1.0µF, COUT=2.2µF
2.850
2.825
2.800
2.775
2.750
2.725
2.700
CIN=1.0µF, COUT=2.2µF
0
-60
-40
-20
0
20
40
60
80
100
120
140
-60
-40
-20
0
20
40
60
80
100
120
140
Junction Temperature (oC)
Junction Temperature (oC)
Figure 4. Output Voltage vs. Junction Temperature
Figure 5. Dropout Voltage vs. Junction Temperature
5000
6
AP2202-2.8
TA=25oC
5
IOUT=50mA
4000
CIN=1.0µF, COUT=2.2µF
4
IOUT=100mA
IOUT=150mA
VIN=3.8V,VEN=2.0V
CIN=1.0µF, COUT=2.2µF
3000
2000
1000
0
3
2
1
0
-1
-2
-3
-4
-1000
-2000
-60
-40
-20
0
20
40
60
80
100
120
140
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Output Current (mA)
Junction Temperature (oC)
Figure 6. Ground Pin Current vs. Output Current
Figure 7. Ground Pin Current vs. Junction Temperature
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
24
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Typical Performance Characteristics (Continued)
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
20
18
16
14
12
10
8
VEN=1.8V
VEN=2.0V
AP2202-2.8
AP2202-2.8
VEN=on
VEN=off
VEN=3.0V
CIN=1.0µF,COUT=2.2µF
VIN=3.8V,IOUT=5mA
VEN=4.0V
VIN=3.8V, CIN=1.0µF
COUT=2.2µF, IOUT=100µA
6
4
2
0
-60
-60
-40
-20
0
20
40
60
80
100
120
140
-40
-20
0
20
40
60
80
100
120
140
Junction Temperature (oC)
Junction Temperature (oC)
Figure 9. Enable Voltage vs. Junction Temperature
Figure 8. Enable Current vs. Junction Temperature
200
10
AP2202-2.8
CIN=1.0µF, COUT=2.2µF, CBYP=100pF
IOUT=10mA
CIN=1.0µF, COUT=2.2µF
VIN=4.5V, IOUT=10mA
1
Noise Measurement Filter: DIN Noise
150
100
50
0.1
0.01
0.001
0
10
10
100
1k
10k
100k
1M
10M
100
1000
10000
Bypass Capacitor (pF)
Frequency (Hz)
Figure 10. Noise vs. Bypass Capacitor
Figure 11. Output Noise vs. Frequency
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
25
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Typical Performance Characteristics (Continued)
5.8
150
AP2202-2.8
4.8
3.8
AP2202-2.8
100
50
0
2.8
20
0
50
0
-20
-40
-60
-50
-100
0
20
40 60 80 100 120 140 160 180 200
0
10 20 30 40 50
Time (
60 70
80 90 100
Time (µs)
µs)
Figure 13. Line Transient
(Conditions: VIN=3.8V to 4.8V, VEN=2V, IOUT=100µA
CBYP=100pF, COUT=10µF)
Figure 12. Load Transient
(Conditions: V =3.8V, C =100pF, V =2V,
IN
BYP
EN
I
=5mA to 50mA, C =1.0µF,
C
=2.2µF)
OUT
IN
OUT
4
2
0
100
AP2202-2.8
90
80
70
60
50
40
30
20
10
0
AP2202-2.8
VIN=3.8V, VRIPPLE=1VPP
IOUT=10mA, COUT=2.2µF
3
2
1
0
-1
-2
10
100
1k
10k
100k
1M
0
100 200 300 400 500 600 700 800 900 1000
Frequency (Hz)
Time (µs)
Figure 15. PSRR vs. Frequency
Figure 14. V (on) vs. V
EN
OUT
(Conditions: V =0V to 2V, V =3.8V, I
=30mA,
EN
IN
OUT
C
=open,
C
=1.0µF,
C
=2.2µF)
BYP
IN
OUT
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
26
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Typical Performance Characteristics (Continued)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
SOT-23-5 Package
No Heatsink
SOT-89-3 Package
No Heatsink
25
50
75
100
125
150
25
50
75
100
125
150
Ambient Temperature (oC)
Ambient Temperature (oC)
Figure 16. Power Dissipation vs. Ambient Temperature
Figure 17. Power Dissipation vs. Ambient Temperature
100
100
COUT=1.0µF
COUT=2.2µF
10
10
No Bypass Capacitor
No Bypass Capacitor
Stable Area
1
1
Stable Area
0.1
0.1
0.01
0.01
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Output Current (mA)
Output Current (mA)
Figure 18. ESR vs. Output Current
Figure 19. ESR vs. Output Current
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
27
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Typical Performance Characteristics (Continued)
100
COUT=4.7µF
10
No Bypass Capacitor
1
Stable Area
0.1
0.01
0
25
50
75
100
125
150
Output Current (mA)
Figure 20. ESR vs. Output Current
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
28
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Typical Application
VIN=3.8V
AP2202-2.8
VOUT=2.8V
VIN
VIN
VOUT
BYP
VOUT
EN
COUT
2.2µF
CIN
1.0µF
GND
CBYP
100pF
AP2202-ADJ
VIN
VIN
EN
VOUT
VOUT
R1
R2
GND
ADJ
CIN
COUT
2.2µF
1.0µF
CBYP
optional
VOUT=1.25* (1+R2/R1)
Figure 21. Typical Application of AP2202 (Note 7)
Note 7: Dropout voltage is 165mV when TA=25oC. In order to obtain a normal output voltage, VOUT+0.165V is the minimum
input voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage
is VOUT+0.5V to 13.2V. For AP2202-2.8 version, its input voltage can be set from 3.3V(VOUT+0.5V) to 13.2V. For that of
Adj version, any value from VOUT+0.5V to 13.2V is available. R1 and R2 must be correctly selected when setting the output
voltage. For example, if 3.0V output voltage is required, R1 and R2 can be set to 10kΩ and 14kΩ respectively. For Adj ver-
sion, we recommend 2.3V as minimum output voltage.
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
29
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Application Information
Input Capacitor
A 1µF minimum capacitor is recommended to be
placed between V and GND.
To determine if the power dissipated in the regulator
reaches the maximum power dissipation (see figure
16,17), using:
IN
T = P *θJA + T
J
D
A
Output Capacitor
P =(V -V
)*I
+V *I
D
IN OUT OUT IN GND
It is required to prevent oscillation. 1.0µF minimum
is recommended when C
is unused. 2.2µF mini-
Where: T ≤T
, T
is absolute maximum rat-
BYP
J
J(max) J(max)
mum is recommended when C
is 100pF. The out-
ings for the junction temperature; V *I
can be
BYP
IN GND
put capacitor may be increased to improve transient
response.
ignored due to its small value.
T
is 150oC, θJA is 200oC/W for SOT-23-5 pack-
J(max)
Noise Bypass Capacitor
age and 165oC/W for SOT-89-3 package, no heatsink
is required since the package alone will dissipate
enough heat to satisfy these requirements unless the
calculated value for power dissipation exceeds the
limit.
Bypass capacitor is connected to the internal voltage
reference. A 100pF capacitor connected from BYP to
GND make this reference quiet, resulting in a
significant reduction in output noise, but the ESR
stable area will be narrowed.
Example: For 2.8V version packaged in SOT-23-5,
The start-up speed of the AP2202 is inversely
proportional to the value of reference bypass
capacitor. In some cases, if output noise is not a
major concern and rapid turn-on is necessary, omit
o
I
=150mA, T =50 C, V
is:
IN(Max)
OUT
A
(150oC-50oC)/(0.15A*200oC/W)+2.8V=6.133V
C
and leave BYP open.
Therefore, for good performance, please make sure
BYP
that input voltage is less than 6.133V without heat-
o
Power Dissipation
sink when T =50 C.
A
Thermal shutdown may take place if exceeding the
maximum power dissipation in application. Under all
possible operating conditions, the junction tempera-
ture must be within the range specified under abso-
lute maximum ratings to avoid thermal shutdown.
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
30
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Mechanical Dimensions
SOT-23-5
Unit: mm(inch)
2.820(0.111)
3.020(0.119)
0.100(0.004)
0.200(0.008)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
0.950(0.037)
TYP
1.800(0.071)
2.000(0.079)
0.000(0.000)
0.100(0.004)
1.050(0.041)
1.150(0.045)
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
31
Data Sheet
150mA RF ULDO REGULATOR
AP2202
Mechanical Dimensions (Continued)
SOT-89-3
Unit: mm(inch)
4.400(0.173)
4.600(0.181)
1.400(0.055)
1.600(0.063)
1.630(0.064)
1.830(0.072)
0.000(0.000)
0.076(0.003)
1.400(0.055)*
R0.200(0.008)
2.300(0.091)
2.600(0.102)
3°
0.360(0.014)
0.480(0.019)
0.440(0.017)
0.360(0.014)
0.440(0.017)
0.360(0.014)
0.520(0.020)
0.560(0.022)
3.000(0.118)
R0.150(0.006)
Mar. 2007 Rev. 1. 7
BCD Semiconductor Manufacturing Limited
32
http://www.bcdsemi.com
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