AP2120N-2.5TRG1 [BCDSEMI]

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR; 高速度,超低噪音LDO稳压器
AP2120N-2.5TRG1
型号: AP2120N-2.5TRG1
厂家: BCD SEMICONDUCTOR MANUFACTURING LIMITED    BCD SEMICONDUCTOR MANUFACTURING LIMITED
描述:

HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
高速度,超低噪音LDO稳压器

稳压器 调节器 光电二极管 输出元件
文件: 总21页 (文件大小:659K)
中文:  中文翻译
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Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
General Description  
Features  
The AP2120 series are positive voltage regulator ICs  
fabricated by CMOS process. Each of these ICs con-  
sists of a voltage reference, an error amplifier, a resis-  
tor network for setting output voltage, a current limit  
circuit for current protection.  
·
Low Dropout Voltage at I  
=100mA: 200mV  
OUT  
Typical (Except 1.2V, 1.3V and 1.5V Versions)  
Low Quiescent Current: 25µA Typical  
High Ripple Rejection: 65dB Typical f=1kHz)  
Output Current: More Than 150mA (250mA  
Limit)  
·
·
·
The AP2120 series feature high supply voltage ripple  
rejection, low dropout voltage, low noise, high output  
voltage accuracy, and low current consumption which  
make them ideal for use in various battery-powered  
devices.  
·
Extremely Low Noise: 15µVrms@V  
1.3V, 1.5V (10Hz to 100kHz)  
=1.2V,  
OUT  
·
·
·
·
Excellent Line Regulation: 4mV Typical  
Excellent Load Regulation: 12mV Typical  
High Output Voltage Accuracy: ±2%  
Excellent Line Transient Response and Load  
Transient Response  
The AP2120 series have 1.2V, 1.3V, 1.5V, 1.8V, 2.5V,  
2.8V, 3.0V, 3.2V, 3.3V and 5.0V versions.  
·
Compatible with Low ESR Ceramic Capacitor (as  
Low as 1µF)  
The AP2120 are available in standard SOT-23 package.  
Applications  
·
·
·
·
·
Mobile Phones, Cordless Phones  
Wireless Communication Equipment  
Portable Games  
Cameras, Video Recorders  
Sub-board Power Supplies for Telecom Equip-  
ment  
·
Battery Powered Equipment  
SOT-23  
Figure 1. Package Types of AP2120  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
1
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Pin Configuration  
N Package  
(SOT-23)  
VIN  
3
2
1
VOUT  
GND  
Figure 2. Pin Configuration of AP2120 (Top View)  
Pin Description  
Pin Number  
Pin Name  
Function  
1
2
GND  
VOUT  
Ground  
Regulated Output Voltage  
3
VIN  
Input Voltage  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
2
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Functional Block Diagram  
3
2
V
V
IN  
OUT  
VREF  
CURRENT LIMIT  
1
GND  
Figure 3. Functional Block Diagram of AP2120  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
3
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Ordering Information  
AP2120  
G1: Green  
TR: Tape and Reel  
Circuit Type  
1.2: Fixed Output 1.2V  
1.3: Fixed Output 1.3V  
1.5: Fixed Output 1.5V  
1.8: Fixed Output 1.8V  
2.5: Fixed Output 2.5V  
2.8: Fixed Output 2.8V  
3.0: Fixed Output 3.0V  
3.2: Fixed Output 3.2V  
3.3: Fixed Output 3.3V  
5.0: Fixed Output 5.0V  
Package  
N: SOT-23  
Package  
Temperature Range  
Part Number  
AP2120N-1.2TRG1  
Marking ID  
Packing Type  
GR4  
GR5  
GR6  
GR7  
GR8  
GR9  
GS2  
GS3  
GS4  
GS5  
Tape & Reel  
Tape & Reel  
Tape & Reel  
Tape & Reel  
Tape & Reel  
Tape & Reel  
Tape & Reel  
Tape & Reel  
Tape & Reel  
Tape & Reel  
AP2120N-1.3TRG1  
AP2120N-1.5TRG1  
AP2120N-1.8TRG1  
AP2120N-2.5TRG1  
AP2120N-2.8TRG1  
AP2120N-3.0TRG1  
AP2120N-3.2TRG1  
AP2120N-3.3TRG1  
AP2120N-5.0TRG1  
o
SOT-23  
-40 to 85 C  
BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
4
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Absolute Maximum Ratings (Note 1)  
Parameter  
Symbol  
Value  
Unit  
Input Voltage  
VIN  
6.5  
V
Enable Input Voltage  
VCE  
IOUT  
TJ  
-0.3 to VIN+0.3  
V
Output Current  
300  
150  
mA  
oC  
oC  
oC  
Junction Temperature  
Storage Temperature Range  
Lead Temperature (Soldering, 10sec)  
Thermal Resistance (Note 2)  
TSTG  
TLEAD  
θJA  
-65 to 150  
260  
oC/W  
V
250  
ESD (Human Body Model)  
ESD (Machine Model)  
ESD  
ESD  
2000  
200  
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.  
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated  
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods  
may affect device reliability.  
Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica-  
tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a  
function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient tem-  
perature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max)  
-
TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature.  
Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Max  
Unit  
Input Voltage  
VIN  
2
6
V
oC  
Operating Junction Temperature Range  
TJ  
-40  
85  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
5
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Electrical Characteristics  
AP2120-1.2 Electrical Characteristics  
TJ≤  
(VIN=2.2V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
VIN=2.2V  
VOUT  
Output Voltage  
1.176  
1.2  
1.224  
V
1mAIOUT30mA  
Input Voltage  
VIN  
6
V
Output Current  
IOUT  
VIN-VOUT=1V  
150  
mA  
VIN=2.2V  
VRLOAD  
Load Regulation  
Line Regulation  
12  
4
40  
16  
mV  
mV  
1mAIOUT80mA  
2.2VVIN6V  
IOUT=30mA  
VRLINE  
IOUT=10mA  
700  
700  
700  
700  
900  
900  
900  
900  
I
OUT=100mA  
IOUT=150mA  
OUT=200mA  
VDROP  
Dropout Voltage  
mV  
I
IQ  
VIN=2.2V, IOUT=0mA  
Quiescent Current  
25  
65  
50  
µA  
Ripple 0.5Vp-p, f=1kHz  
VIN=2.2V  
Power Supply  
Rejection Ratio  
PSRR  
dB  
µV/oC  
VOUT/T  
(VOUT/VOUT)/T  
ILIMIT  
±120  
±100  
50  
Output Voltage  
Temperature Coefficient  
IOUT=30mA  
ppm/oC  
mA  
Short Current Limit  
RMS Output Noise  
VOUT=0V  
TA=25oC, IOUT=0  
VNOISE  
15  
µVrms  
10Hz f100kHz  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
6
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Electrical Characteristics (Continued)  
AP2120-1.3 Electrical Characteristics  
TJ≤  
(VIN=2.3V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
VIN=2.3V  
VOUT  
Output Voltage  
1.274  
1.3  
1.326  
V
1mAIOUT30mA  
Input Voltage  
VIN  
6
V
Output Current  
IOUT  
VIN-VOUT=1V  
150  
mA  
VIN=2.3V  
VRLOAD  
Load Regulation  
Line Regulation  
12  
4
40  
16  
mV  
mV  
1mAIOUT80mA  
2.3VVIN6V  
IOUT=30mA  
VRLINE  
IOUT=10mA  
600  
600  
600  
600  
800  
800  
800  
800  
I
OUT=100mA  
IOUT=150mA  
OUT=200mA  
VDROP  
Dropout Voltage  
mV  
I
IQ  
VIN=2.3V, IOUT=0mA  
Quiescent Current  
25  
65  
50  
µA  
Ripple 0.5Vp-p, f=1kHz  
VIN=2.3V  
Power Supply  
Rejection Ratio  
PSRR  
dB  
µV/oC  
VOUT/T  
(VOUT/VOUT)/T  
ILIMIT  
±130  
±100  
50  
Output Voltage  
Temperature Coefficient  
IOUT=30mA  
ppm/oC  
mA  
Short Current Limit  
RMS Output Noise  
VOUT=0V  
TA=25oC, IOUT=0  
VNOISE  
15  
µVrms  
10Hz f100kHz  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
7
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Electrical Characteristics (Continued)  
AP2120-1.5 Electrical Characteristics  
TJ≤  
(VIN=2.5V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
VIN=2.5V  
VOUT  
Output Voltage  
1.47  
1.5  
1.53  
V
1mAIOUT30mA  
Input Voltage  
VIN  
6
V
Output Current  
IOUT  
VIN-VOUT=1V  
150  
mA  
VIN=2.5V  
VRLOAD  
Load Regulation  
Line Regulation  
12  
4
40  
16  
mV  
mV  
1mAIOUT80mA  
2.3VVIN6V  
IOUT=30mA  
VRLINE  
IOUT=10mA  
400  
400  
400  
400  
600  
600  
600  
600  
I
OUT=100mA  
IOUT=150mA  
OUT=200mA  
VDROP  
Dropout Voltage  
mV  
I
IQ  
VIN=2.5V, IOUT=0mA  
Quiescent Current  
25  
65  
50  
µA  
Ripple 0.5Vp-p, f=1kHz  
VIN=2.5V  
Power Supply  
Rejection Ratio  
PSRR  
dB  
µV/oC  
VOUT/T  
(VOUT/VOUT)/T  
ILIMIT  
±150  
±100  
50  
Output Voltage  
Temperature Coefficient  
IOUT=30mA  
ppm/oC  
mA  
Short Current Limit  
RMS Output Noise  
VOUT=0V  
TA=25oC, IOUT=0  
VNOISE  
15  
µVrms  
10Hz f100kHz  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
8
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Electrical Characteristics (Continued)  
AP2120-1.8 Electrical Characteristics  
TJ≤  
(VIN=2.8V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
VIN=2.8V  
VOUT  
Output Voltage  
1.764  
1.8  
1.836  
V
1mAIOUT30mA  
Input Voltage  
VIN  
6
V
Output Current  
IOUT  
VIN-VOUT=1V  
150  
mA  
VIN=2.8V  
VRLOAD  
Load Regulation  
Line Regulation  
12  
4
40  
16  
mV  
mV  
1mAIOUT80mA  
2.3VVIN6V  
IOUT=30mA  
VRLINE  
IOUT=10mA  
IOUT=100mA  
IOUT=150mA  
20  
40  
VDROP  
Dropout Voltage  
mV  
200  
300  
300  
500  
IQ  
VIN=2.8V, IOUT=0mA  
Quiescent Current  
25  
50  
µA  
Ripple 0.5Vp-p, f=1kHz  
VIN=2.8V  
Power Supply  
Rejection Ratio  
PSRR  
65  
dB  
µV/oC  
VOUT/T  
(VOUT/VOUT)/T  
ILIMIT  
±180  
Output Voltage  
Temperature Coefficient  
IOUT=30mA  
ppm/oC  
mA  
±100  
Short Current Limit  
RMS Output Noise  
VOUT=0V  
50  
TA=25oC  
VNOISE  
30  
µVrms  
10Hz f100kHz  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
9
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Electrical Characteristics (Continued)  
AP2120-2.5 Electrical Characteristics  
TJ≤  
(VIN=3.5V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)  
Parameter  
Symbol  
Conditions  
VIN=3.5V  
Min  
Typ  
Max  
Unit  
VOUT  
Output Voltage  
2.45  
2.5  
2.55  
V
1mAIOUT30mA  
Input Voltage  
VIN  
6
V
Output Current  
IOUT  
VIN-VOUT=1V  
150  
mA  
VIN=3.5V  
VRLOAD  
Load Regulation  
Line Regulation  
12  
4
40  
16  
mV  
mV  
1mAIOUT80mA  
3VVIN6V  
IOUT=30mA  
VRLINE  
IOUT=10mA  
IOUT=100mA  
IOUT=150mA  
20  
40  
VDROP  
Dropout Voltage  
mV  
200  
300  
300  
500  
IQ  
VIN=3.5V, IOUT=0mA  
Quiescent Current  
25  
50  
µA  
Ripple 0.5Vp-p, f=1kHz  
VIN=3.5V  
Power Supply  
Rejection Ratio  
PSRR  
65  
dB  
µV/oC  
VOUT/T  
(VOUT/VOUT)/T  
ILIMIT  
±250  
Output Voltage  
Temperature Coefficient  
IOUT=30mA  
ppm/oC  
mA  
±100  
Short Current Limit  
RMS Output Noise  
VOUT=0V  
50  
TA=25oC  
VNOISE  
30  
µVrms  
10Hz f100kHz  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
10  
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Electrical Characteristics (Continued)  
AP2120-2.8 Electrical Characteristics  
TJ≤  
(VIN=3.8V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
VIN=3.8V  
VOUT  
Output Voltage  
2.744  
2.8  
2.856  
V
1mAIOUT30mA  
Input Voltage  
VIN  
6
V
Output Current  
IOUT  
VIN-VOUT=1V  
150  
mA  
VIN=3.8V  
VRLOAD  
Load Regulation  
Line Regulation  
12  
4
40  
16  
mV  
mV  
1mAIOUT80mA  
3.3VVIN6V  
IOUT=30mA  
VRLINE  
IOUT=10mA  
IOUT=100mA  
IOUT=150mA  
20  
40  
VDROP  
Dropout Voltage  
mV  
200  
300  
300  
500  
IQ  
VIN=3.8V, IOUT=0mA  
Quiescent Current  
25  
50  
µA  
Ripple 0.5Vp-p, f=1kHz  
VIN=3.8V  
Power Supply  
Rejection Ratio  
PSRR  
65  
dB  
µV/oC  
VOUT/T  
(VOUT/VOUT)/T  
ILIMIT  
±280  
Output Voltage  
Temperature Coefficient  
IOUT=30mA  
ppm/oC  
mA  
±100  
Short Current Limit  
RMS Output Noise  
VOUT=0V  
50  
TA=25oC  
VNOISE  
30  
µVrms  
10Hz f100kHz  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
11  
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Electrical Characteristics (Continued)  
AP2120-3.0 Electrical Characteristics  
TJ≤  
(VIN=4V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
VIN=4V  
VOUT  
Output Voltage  
2.94  
3.0  
3.06  
V
1mAIOUT30mA  
Input Voltage  
VIN  
6
V
Output Current  
IOUT  
VIN-VOUT=1V  
150  
mA  
VIN=4V  
VRLOAD  
Load Regulation  
Line Regulation  
12  
4
40  
16  
mV  
mV  
1mAIOUT80mA  
3.5VVIN6V  
IOUT=30mA  
VRLINE  
IOUT=10mA  
IOUT=100mA  
20  
40  
VDROP  
Dropout Voltage  
mV  
200  
300  
300  
500  
I
OUT=150mA  
IQ  
VIN=4V, IOUT=0mA  
Quiescent Current  
25  
50  
µA  
Ripple 0.5Vp-p, f=1kHz  
VIN=4V  
Power Supply  
Rejection Ratio  
PSRR  
65  
dB  
µV/oC  
VOUT/T  
(VOUT/VOUT)/T  
ILIMIT  
±300  
Output Voltage  
Temperature Coefficient  
IOUT=30mA  
ppm/oC  
mA  
±100  
Short Current Limit  
RMS Output Noise  
VOUT=0V  
50  
TA=25oC  
VNOISE  
30  
µVrms  
10Hz f100kHz  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
12  
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Electrical Characteristics (Continued)  
AP2120-3.2 Electrical Characteristics  
TJ≤  
(VIN=4.2V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)  
Parameter  
Symbol  
Conditions  
VIN=4.2V  
Min  
Typ  
Max  
Unit  
VOUT  
Output Voltage  
3.136  
3.2  
3.264  
V
1mAIOUT30mA  
Input Voltage  
VIN  
6
V
Output Current  
IOUT  
VIN-VOUT=1V  
150  
mA  
VIN=4.2V  
VRLOAD  
Load Regulation  
Line Regulation  
12  
4
40  
16  
mV  
mV  
1mAIOUT80mA  
3.7VVIN6V  
IOUT=30mA  
VRLINE  
IOUT=10mA  
IOUT=100mA  
IOUT=150mA  
20  
40  
VDROP  
Dropout Voltage  
mV  
200  
300  
300  
500  
IQ  
VIN=4.2V, IOUT=0mA  
Quiescent Current  
25  
50  
µA  
Ripple 0.5Vp-p, f=1kHz  
VIN=4.2V  
Power Supply  
Rejection Ratio  
PSRR  
65  
dB  
µV/oC  
VOUT/T  
(VOUT/VOUT)/T  
ILIMIT  
±320  
Output Voltage  
Temperature Coefficient  
IOUT=30mA  
ppm/oC  
mA  
±100  
Short Current Limit  
RMS Output Noise  
VOUT=0V  
50  
TA=25oC  
VNOISE  
30  
µVrms  
10Hz f100kHz  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
13  
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Electrical Characteristics (Continued)  
AP2120-3.3 Electrical Characteristics  
TJ≤  
(VIN=4.3V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)  
Parameter  
Symbol  
Conditions  
VIN=4.3V  
Min  
Typ  
Max  
Unit  
VOUT  
Output Voltage  
3.234  
3.3  
3.366  
V
1mAIOUT30mA  
Input Voltage  
VIN  
6
V
Output Current  
IOUT  
VIN-VOUT=1V  
150  
mA  
VIN=4.3V  
VRLOAD  
Load Regulation  
Line Regulation  
12  
4
40  
16  
mV  
mV  
1mAIOUT80mA  
3.8VVIN6V  
IOUT=30mA  
VRLINE  
IOUT=10mA  
IOUT=100mA  
IOUT=150mA  
20  
40  
VDROP  
Dropout Voltage  
mV  
200  
300  
300  
500  
IQ  
VIN=4.3V, IOUT=0mA  
Quiescent Current  
25  
50  
µA  
Ripple 0.5Vp-p, f=1kHz  
VIN=4.3V  
Power Supply  
Rejection Ratio  
PSRR  
65  
dB  
µV/oC  
VOUT/T  
(VOUT/VOUT)/T  
ILIMIT  
±330  
Output Voltage  
Temperature Coefficient  
IOUT=30mA  
ppm/oC  
mA  
±100  
Short Current Limit  
RMS Output Noise  
VOUT=0V  
50  
TA=25oC  
VNOISE  
30  
µVrms  
10Hz f100kHz  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
14  
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Electrical Characteristics (Continued)  
AP2120-5.0 Electrical Characteristics  
TJ≤  
(VIN=6.0V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)  
Parameter  
Symbol  
Conditions  
VIN=6.0V  
Min  
Typ  
Max  
Unit  
VOUT  
Output Voltage  
4.9  
5.0  
5.1  
V
1mAIOUT30mA  
Input Voltage  
VIN  
6
V
Output Current  
IOUT  
VIN-VOUT=1V  
150  
mA  
VIN=4.3V  
VRLOAD  
Load Regulation  
Line Regulation  
12  
4
40  
16  
mV  
mV  
1mAIOUT80mA  
5.5VVIN6V  
IOUT=30mA  
VRLINE  
IOUT=10mA  
IOUT=100mA  
IOUT=150mA  
20  
40  
VDROP  
Dropout Voltage  
mV  
200  
300  
300  
500  
IQ  
VIN=6.0V, IOUT=0mA  
Quiescent Current  
25  
50  
µA  
Ripple 0.5Vp-p, f=1kHz  
VIN=6.0V  
Power Supply  
Rejection Ratio  
PSRR  
65  
dB  
µV/oC  
VOUT/T  
(VOUT/VOUT)/T  
ILIMIT  
±330  
Output Voltage  
Temperature Coefficient  
IOUT=30mA  
ppm/oC  
mA  
±100  
Short Current Limit  
RMS Output Noise  
VOUT=0V  
50  
TA=25oC  
VNOISE  
30  
µVrms  
10Hz f100kHz  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
15  
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Typical Performance Characteristics  
2.535  
2.5  
2.530  
2.525  
2.0  
2.520  
2.515  
1.5  
AP2120-2.5  
2.510  
IOUT=10mA  
1.0  
AP2120-2.5  
2.505  
2.500  
2.495  
2.490  
IOUT=50mA  
IOUT=100mA  
IOUT=150mA  
TC=-40oC  
TC=25oC  
TC=85oC  
0.5  
0.0  
VIN=3.5V  
VIN=3.5V  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
0.00  
0.05  
0.10  
0.15  
0.20  
0.25  
0.30  
Case Temperature (oC)  
Output Current (A)  
Figure 4. Output Voltage vs. Output Current  
Figure 5. Output Voltage vs. Case Temperature  
35  
30  
25  
20  
15  
10  
5
AP2120-2.5  
TC=-40oC  
55  
50  
45  
40  
35  
30  
25  
TC=25oC  
TC=85oC  
VIN=3.5V  
AP2120-2.5  
TC=-40oC  
TC=25oC  
TC=85oC  
I
OUT=0  
0
0.00  
0.05  
0.10  
0.15  
0.20  
0
1
2
3
4
5
6
Output Current (A)  
Input Voltage (V)  
Figure 7. Quiescent Current vs. Output Current  
Figure 6. Quiescent Current vs. Input Voltage  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
16  
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Typical Performance Characteristics (Continued)  
50  
400  
AP2120-2.5  
TC=-40oC  
45  
40  
35  
30  
25  
20  
15  
10  
350  
300  
250  
200  
150  
100  
50  
TC=25oC  
TC=85oC  
AP2120-2.5  
VIN=3.5V  
IOUT=0  
0
0.00  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
0.02  
0.04  
0.06  
0.08  
0.10  
0.12  
0.14  
0.16  
Case Temperature (oC)  
Output Current (A)  
Figure 9. Dropout Voltage vs. Output Current  
Figure 8. Quiescent Current vs. Case Temperature  
450  
AP2120-2.5  
150  
400  
350  
300  
250  
200  
150  
100  
50  
100  
50  
0
50  
0
AP2120-2.5  
IOUT=10mA  
-50  
-100  
IOUT=80mA  
IOUT=150mA  
0
-40  
-20  
0
20  
40  
60  
80  
Case Temperature (oC)  
Figure 10. Dropout Voltage vs. Case Temperature  
Figure 11. Load Transient (IOUT=0 to 150mA)  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
17  
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Typical Performance Characteristics (Continued)  
AP2120-2.5  
2
AP2120-2.5  
I
=10mA  
OUT  
1
0
I
=150mA  
OUT  
50  
0
-50  
Figure 12. Line Transient  
Figure 13. PSRR vs. Frequency  
(Condition:VIN=2.5V to 3.5,IOUT=10mA)  
3.5  
Input Voltage  
3.0  
AP2120-2.5  
3.0  
2.5  
2.0  
1.5  
2.5  
2.0  
Output Voltage  
1.0  
1.5  
1.0  
0.5  
0.5  
0
0
Figure 14. Start-up  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
18  
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Typical Application  
AP2120-2.5  
VIN=3.5V  
VOUT=2.5V  
VOUT  
VIN  
VIN  
VOUT  
GND  
COUT  
1µF  
CIN  
1µF  
Note: Filter capacitors are required at the AP2120's input and output. 1µF capacitor is required at the input. The  
minimum output capacitance required for stability should be more than 1µF with ESR from 0.01to 100Ω.  
Ceramic capacitors are recommended.  
Figure 15. Typical Application of AP2120  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
19  
Data Sheet  
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR  
AP2120  
Mechanical Dimensions  
SOT-23  
Unit: mm(inch)  
Nov. 2009 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
20  
BCD Semiconductor Manufacturing Limited  
http://www.bcdsemi.com  
- Headquarters  
- Wafer Fab  
BCD Semiconductor Manufacturing Limited  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.  
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China  
800 Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-24162266, Fax: +86-21-24162277  
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008  
REGIONAL SALES OFFICE  
Shenzhen Office  
Taiwan Office  
USA Office  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office  
BCD Semiconductor (Taiwan) Company Limited  
BCD Semiconductor Corp.  
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen,  
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,  
30920 Huntwood Ave. Hayward,  
518026, China  
Taiwan  
Tel: +886-2-2656 2808  
CA 94544, USA  
Tel: +86-755-8826 7951  
Tel : +1-510-324-2988  
Fax: +86-755-8826 7865  
Fax: +886-2-2656 2806  
Fax: +1-510-324-2788  

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