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4558CM [BCDSEMI]

DUAL BIPOLAR OPERATIONAL AMPLIFIERS; 双双极运算放大器
4558CM
型号： 4558CM
厂家： BCD SEMICONDUCTOR MANUFACTURING LIMITED    BCD SEMICONDUCTOR MANUFACTURING LIMITED
描述：

DUAL BIPOLAR OPERATIONAL AMPLIFIERS
双双极运算放大器

运算放大器
文件： 总10页 (文件大小：136K)
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Data Sheet  
DUAL BIPOLAR OPERATIONAL AMPLIFIERS  
AZ4558C  
General Description  
Features  
The AZ4558C consists of two high performance  
operational amplifiers. The IC features high gain, low  
equivalent input noise voltage, high input resistance,  
excellent channel separation, wide range of operating  
voltage and internal frequency compensation.  
·
·
·
·
·
Internally Frequency Compensated  
Large Signal Voltage Gain: 100dB Typical  
Gain and Phase Match between Amplifiers  
Gain Bandwidth Product (at 10KHz): 5.5MHz  
Pin to Pin Compatible with MC1458  
It can work with ±18V maximum power supply  
voltage or single power supply up to 36V.  
Applications  
The AZ4558C is available in DIP-8 and SOIC-8 pack-  
ages.  
·
·
Audio AC-3 Decoder System  
Audio Amplifier  
SOIC-8  
DIP-8  
Figure 1. Package Types of AZ4558C  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
1
Data Sheet  
DUAL BIPOLAR OPERATIONAL AMPLIFIERS  
AZ4558C  
Pin Configuration  
M Package/P Package  
(SOIC-8/DIP-8)  
OUTPUT 1  
INPUT 1-  
INPUT 1+  
VEE  
1
2
3
4
8
7
6
5
VCC  
OUTPUT 2  
INPUT 2-  
INPUT 2+  
Figure 2. Pin Configuration of AZ4558C (Top View)  
Functional Block Diagram  
VCC  
- Input  
+ Input  
Output  
VEE  
Figure 3. Functional Block Diagram of AZ4558C (Each Amplifier)  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
2
Data Sheet  
DUAL BIPOLAR OPERATIONAL AMPLIFIERS  
AZ4558C  
Ordering Information  
AZ4558C  
-
E1: Lead Free  
Blank: Tin Lead  
Circuit Type  
Package  
M: SOIC-8  
P: DIP-8  
TR: Tape and Reel  
Blank: Tube  
Part Number  
Marking ID  
Temperature  
Package  
Packing Type  
Range  
Tin Lead  
Lead Free  
Tin Lead  
4558CM  
Lead Free  
4558CM-E1  
4558CM-E1  
AZ4558CP-E1  
AZ4558CM  
AZ4558CMTR  
AZ4558CP  
AZ4558CM-E1  
Tube  
Tape & Reel  
Tube  
-40 to 85oC  
-40 to 85oC  
SOIC-8  
DIP-8  
AZ4558CMTR-E1 4558CM  
AZ4558CP-E1 AZ4558CP  
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.  
Absolute Maximum Ratings (Note 1)  
Parameter  
Symbol  
Value  
+20  
-20  
Unit  
VCC  
Supply Voltage  
V
VEE  
VI  
Input Voltage  
±15  
±30  
150  
V
V
VID  
Differential Input Voltage  
Operating Junction Temperature  
o
T
J
C
o
Storage Temperature Range  
T
-65 to 150  
260  
STG  
C
o
Lead Temperature (Soldering 10s)  
T
L
C
DIP  
800  
500  
mW  
mW  
Power Dissipation  
P
D
SOIC  
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.  
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated  
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods  
may affect device reliability.  
Recommended Operating Conditions  
Parameter  
Min  
±2  
Max  
±18  
85  
Unit  
Supply Voltage  
V
oC  
-40  
Operating Temperature Range  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
3
Data Sheet  
DUAL BIPOLAR OPERATIONAL AMPLIFIERS  
AZ4558C  
Electrical Characteristics  
Operating Conditions: VCC=+15V, VEE=-15V, TA=25oC, unless otherwise specified.  
Parameter  
Symbol  
Conditions  
Min  
Typ  
1
Max  
5
Unit  
mV  
nA  
VIO  
Input Offset Voltage  
Input Offset Current  
Input Bias Current  
IIO  
IIB  
VCM=0V  
VCM=0V  
10  
100  
400  
70  
nA  
AVD  
RL=2KΩ, VO=±10V  
RS≤10KΩ  
Large Signal Voltage Gain  
Supply Voltage Rejection Ratio  
Supply Current  
85  
80  
100  
100  
2.5  
dB  
SVR  
ICC  
dB  
All Amplifiers, No Load  
4.5  
mA  
Input Common Mode Voltage  
Range  
VICM  
±12  
V
RS≤10KΩ  
RL≥10KΩ  
RL≥2KΩ  
Common Mode Rejection Ratio  
CMRR  
70  
95  
dB  
±12  
±10  
±14  
±13  
VO  
Output Voltage Swing  
V
VI=±10V, RL=2KΩ, CL=100pF, unity  
gain  
Slew Rate  
Rise Time  
Overshoot  
SR  
TR  
1.8  
0.3  
15  
V/µs  
µs  
VI=±20mV, RL=2KΩ, CL=100pF, unity  
gain  
VI=±20mV, RL=2KΩ, CL=100pF, unity  
gain  
KOV  
%
RI  
RO  
B
Input Resistance  
0.5  
45  
MΩ  
Ω
Output Resistance  
Unity Gain Bandwidth  
Gain=0dB  
2.8  
MHz  
VI=±10mV, RL=2KΩ,  
CL=100pF, f=10KHz  
Gain Bandwidth Product  
GBWP  
5.5  
MHz  
%
f=1KHz, AV=6dB, RL=10KΩ,  
Total Harmonic Distortion Plus  
Noise  
THD+N  
0.002  
VO=1VRMS  
,
nV  
Equivalent Input Noise Voltage  
Density  
----------  
Hz  
eN  
RS=100Ω, f=1KHz  
10  
ISINK  
V-=1V, V+= 0V, VO=2V  
60  
35  
Output Current  
mA  
ISOURCE V+=1V, V-= 0V, VO=2V  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
4
Data Sheet  
DUAL BIPOLAR OPERATIONAL AMPLIFIERS  
AZ4558C  
Typical Performance Characteristics  
120  
20  
100  
15  
80  
60  
10  
VCC=+15V, VEE=-15V,  
RL=2kΩ, THD+N<5%  
40  
5
20  
0
1
10  
100  
1k  
10k  
100k  
1M  
1
10  
100  
1k  
10k  
100k  
1M  
10M  
Frequency (Hz)  
Frequency (Hz)  
Figure 4. Open Loop Voltage Gain vs. Frequency  
Figure 5. Maximum Output Voltage Swing vs. Frequency  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
16  
12  
Positive Voltage Swing  
8
4
0
-4  
-8  
Negative Voltage Swing  
-12  
-40.0  
-20.0  
0.0  
20.0  
40.0  
60.0  
80.0  
100.0  
120.0  
-16  
100  
1k  
10k  
Temperature (OC)  
Resistance Load (Ω)  
Figure 6. Maximum Output Voltage Swing  
vs. Load Resistance  
Figure 7. Supply Current vs. Temperature  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
5
Data Sheet  
DUAL BIPOLAR OPERATIONAL AMPLIFIERS  
AZ4558C  
Typical Performance Characteristics (Continued)  
5
4
120  
100  
80  
60  
40  
20  
0
3
2
1
0
-1  
-2  
-40.0  
-20.0  
0.0  
20.0  
40.0  
60.0  
80.0  
100.0  
120.0  
-40.0  
-20.0  
0.0  
20.0  
40.0  
60.0  
80.0  
100.0  
120.0  
Temperature (OC)  
Temperature (OC)  
Figure 8. Input Offset Voltage vs. Temperature  
Figure 9. Input Bias Current vs. Temperature  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
6
Data Sheet  
DUAL BIPOLAR OPERATIONAL AMPLIFIERS  
AZ4558C  
Typical Application  
R1  
20K 1%  
150pF  
C1  
VEE=-12V  
C3  
0.1µF  
C2  
VIN  
R3  
3.3K 1%  
R2 10K 1%  
4
2 (6)  
-
C4  
VOUT  
GND  
1 (7)  
22µF/  
25V  
AZ4558C  
3 (5)  
OUT  
8
22uF/25V  
C5  
1000pF  
+
R5  
10K  
R4  
6.8K  
C6  
0.1µF  
GND  
VCC=+12V  
GND  
GND  
GND  
Figure 10. Typical Application of AZ4558C in Audio 2nd Order Low Pass Filter  
(fO=50.6kHz, Q=0.7015, Input impedance=10K, Gain=6dB, Group delay=4.48µs)  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
7
Data Sheet  
DUAL BIPOLAR OPERATIONAL AMPLIFIERS  
AZ4558C  
Mechanical Dimensions  
DIP-8  
Unit: mm(inch)  
0.700(0.028)  
7.620(0.300)TYP  
5°  
1.524(0.060) TYP  
6°  
3.200(0.126)  
3.600(0.142)  
3.710(0.146)  
4.310(0.170)  
0.510(0.020)MIN  
3.000(0.118)  
3.600(0.142)  
0.204(0.008)  
0.360(0.014)  
0.254(0.010)TYP  
8.200(0.323)  
9.400(0.370)  
2.540(0.100)TYP  
0.130(0.005)MIN  
0.360(0.014)  
0.560(0.022)  
6.200(0.244)  
6.600(0.260)  
R0.750(0.030)  
Φ3.000(0.118)  
Depth  
0.100(0.004)  
0.200(0.008)  
9.000(0.354)  
9.400(0.370)  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
8
Data Sheet  
DUAL BIPOLAR OPERATIONAL AMPLIFIERS  
AZ4558C  
Mechanical Dimensions (Continued)  
SOIC-8  
Unit: mm(inch)  
4.800(0.189)  
0.320(0.013)  
1.350(0.053)  
1.750(0.069)  
5.000(0.197)  
0.675(0.027)  
0.725(0.029)  
D
5.800(0.228)  
6.200(0.244)  
1.270(0.050)  
TYP  
D
20:1  
φ
0.800(0.031)  
0.200(0.008)  
0.100(0.004)  
0.300(0.012)  
0°  
8°  
1.000(0.039)  
3.800(0.150)  
4.000(0.157)  
1°  
5°  
0.330(0.013)  
0.510(0.020)  
0.900(0.035)  
)
006  
(0.  
50  
.1  
R0  
0.190(0.007)  
0.250(0.010)  
Jul. 2006 Rev. 1. 2  
BCD Semiconductor Manufacturing Limited  
9
http://www.bcdsemi.com  
IMPORTANT NOTICE  
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-  
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any  
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use  
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or  
other rights nor the rights of others.  
MAIN SITE  
BCD Semiconductor Manufacturing Limited  
BCD Semiconductor Manufacturing Limited  
- Wafer Fab  
- IC Design Group  
Shanghai SIM-BCD Semiconductor Manufacturing Limited  
800, Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008  
Advanced Analog Circuits (Shanghai) Corporation  
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673  
REGIONAL SALES OFFICE  
Shenzhen Office  
Taiwan Office  
USA Office  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office  
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27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China  
Tel: +86-755-8368 3987, Fax: +86-755-8368 3166  
BCD Semiconductor (Taiwan) Company Limited  
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,  
Taiwan  
BCD Semiconductor Corporation  
3170 De La Cruz Blvd., Suite 105, Santa Clara,  
CA 95054-2411, U.S.A  
Tel: +886-2-2656 2808, Fax: +886-2-2656 2806  
Tel: +1-408-988 6388, Fax: +1-408-988 6386  

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