AMGP-6445-BLKG [AVAGO]

ESD protection all ports above 50 V MM and 250 V HBM;
AMGP-6445-BLKG
型号: AMGP-6445-BLKG
厂家: AVAGO TECHNOLOGIES LIMITED    AVAGO TECHNOLOGIES LIMITED
描述:

ESD protection all ports above 50 V MM and 250 V HBM

文件: 总9页 (文件大小:146K)
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AMGP-6445  
40.5 – 43.5 GHz SMT Packaged Linear Power Amplifier  
Data Sheet  
Description  
Features  
The AMGP-6445 is a linear power amplifier in a surface  5 x 5 mm surface mount package  
mount package designed for use in transmitters that  
operate at frequencies between 40.5 GHz and 43.5 GHz. In  
the operational frequency band, it provides 27dBm of  
 RF frequency range from 40.5 to 43.5 GHz  
 Gain: 19 dB Typical  
output power (P-1 dB) and 19 dB of small-signal gain. This  Output P1dB : +27.5 dBm Typical  
PA is designed for high linearity applications, and the PA  
shows more than +31 dBm OIP3 at 18 dBm/tone output  
power.  
 Output IP3: +31 dBm Typical  
 50 Input and Output Match  
 ESD protection all ports above 50 V MM and 250 V HBM  
Functional Block Diagram  
 Integrated temperature compensated power detector  
Pin Function  
 Vdd/Id: 5 V/700 mA  
1
2
3
1
2
3
4
5
6
7
8
Vd1  
 40° C to +85° C operation  
Vd2  
10 K:  
Application  
DET_O  
RF_OUT  
DET_R  
Vg2  
8
4
 Microwave Radio Systems  
Package Diagram  
Vg1  
Vd1  
Vd2  
2
DET_OUT  
3
7
6
5
RF_IN  
1
Attention: Observe Precautions for  
handling electrostatic sensitive devices.  
ESD Machine Model: 50V  
RF_IN  
8
4
RF_OUT  
ESD Human Body Model: 250V  
Refer to Avago Application Note A004R:  
Electrostatic Discharge Damage and Control.  
7
6
5
Vg1  
Vg2  
DET_REF  
Note: MSL Rating = Level 2A  
ELECTRICAL SPECIFICATIONS  
Table 1. Absolute Minimum and Maximum Ratings  
Parameter  
Specifications  
Description  
Min.  
Max.  
Unit  
Comments  
Drain Supply Voltage  
Vd1  
Vd2  
Vg1  
Vg2  
Ig1  
5.5  
V
Gate Voltage  
-2  
0
V
Totel Gate Current  
-3  
mA  
Ig, total = Ig1 + Ig2 Ig, total occurs at  
highest RF Pout condition.  
Ig2  
RF Input Power (Pin)  
Powe Dissipation (Pd)  
Channel Temperature  
Storage Temperature  
RFIN  
20  
dBm  
W
CW  
4
Pd = Vd1 x Id1 + Vd2 x Id2 + Pin – Pout  
150  
150  
°C  
-65  
°C  
Table 2. Recommended Operating Range  
Parameter  
Specifications  
Min.  
Description  
Pin  
Typical  
4.7 [1]  
4.4  
Max.  
Unit  
Comments  
Drain Supply Voltage  
Vd1  
Vd2  
Vg1  
Vg2  
Vd1  
Vd2  
V
Gate Supply Voltage  
-0.83  
-0.63  
-0.43  
V
Quiescent Drain Supply  
Current (Idq)  
200 [2]  
560  
mA  
Idq = Id1 + Id2  
CW  
RF Output Power (Pout)  
Frequency Range  
RFOUT  
28  
30  
dBm  
GHz  
°C/W  
°C  
40.5  
-40  
43.5  
Thermal Resistance, ch-b  
Case Temperature  
13  
Channel to board  
+85  
ESD  
Human Body Model  
Machine Model  
250  
50  
V
V
Notes:  
1. Not recommend to operate below that this voltage level; otherwise, the amplifier may enter instability.  
2. Not recommend to operate above that this current level; otherwise, the amplifier may enter instability.  
2
[1]  
Table 3. RF Electrical Characteristics  
All data measured on a 2.4mm connector based evaluation board at Vdd1 = Vdd2 = 5 V (pulse), Idq = 0.7 A (Id1 + Id2),  
T = 25° C, and 50 at all ports.  
C
Performance  
Parameter  
Min.  
Typical  
-8  
Max.  
Unit  
dB  
Comments  
Input Return Loss (S11)  
Output Return Loss (S22)  
Gain (S21)  
-8  
dB  
Freq = 40.5 GHz  
Freq = 42 GHz  
Freq = 43.5 GHz  
18  
22.9  
21.1  
22.5  
dBm  
Freq = 40.5, 42, 43.5 GHz  
Reverse Isolation (S21)  
P1dB  
-40  
dB  
Freq = 40.5 GHz  
Freq = 42 GHz  
Freq = 43.5 GHz  
27  
28.9  
27.9  
29.8  
dBm  
Freq = 40.5, 42, 43.5 GHz  
IM3 Level  
-23  
dBc  
f = 20 MHz,  
Po =18 dBm/tone  
Detector sensitivity  
Note:  
2.4  
V/W  
1. Gain and P1dB measurement accuracy is subjected to the tolerance of 0.5 dB, 0.5 dBm respectively.  
3
Product Consistency Distribution Charts at 40.5 GHz, 42 GHz and 43.5 GHz, Vdd = 5.5 V, Id = 0.7 A  
(Sample Size of 1500 pieces)  
LSL  
LSL  
26  
27  
28  
29  
30  
31  
32  
26  
27  
28  
29  
30  
31  
32  
P1dB @ 40.5 GHz, Mean = 28.9 dBm, LSL = 27 dBm  
P1dB @ 42 GHz, Mean = 27.9 dBm, LSL = 27 dBm  
LSL  
LSL  
26  
27  
28  
29  
30  
31  
32  
18  
19  
20  
21  
22  
23  
24  
25  
26  
P1dB @ 43.5 GHz, Mean = 29.8 dBm, LSL = 27 dBm  
Gain @ 40.5 GHz, Mean = 22.9 dB, LSL = 18 dB  
LSL  
LSL  
18  
19  
20  
21  
22  
23  
24  
25  
26  
18  
19  
20  
21  
22  
23  
24  
25  
26  
Gain @ 42 GHz, Mean = 21.1 dB, LSL = 18 dB  
Gain @ 43.5 GHz, Mean = 22.5 dB, LSL = 18 dB  
4
Selected performance plots  
0
-5  
25  
20  
15  
10  
5
-10  
-15  
-20  
-25  
0
35 36 37 38 39 40 41 42 43 44 45  
35 36 37 38 39 40 41 42 43 44 45  
Frequency [GHz]  
Frequency [GHz]  
Figure 1. S21(dB) Frequency Sweep  
Figure 2. S11(dB) Frequency Sweep  
0
-5  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-10  
-15  
-20  
-25  
35 36 37 38 39 40 41 42 43 44 45  
35 36 37 38 39 40 41 42 43 44 45  
Frequency [GHz]  
Frequency [GHz]  
Figure 3. S22(dB) Frequency sweep  
Figure 4. S12(dB) Frequency Sweep  
30  
29  
28  
27  
26  
25  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
-15  
-17  
-19  
-21  
-23  
-25  
-27  
-29  
-31  
-33  
-35  
OIP3 [dBm]  
IM3 [dBc]  
38  
39  
40  
41  
42  
43  
44  
38  
39  
40  
41  
42  
43  
44  
Frequency [GHz]  
Frequency [GHz]  
Figure 5. P-1(dBm) Frequency Sweep  
Figure 6. OIP3(dBm) Frequency Sweep at Po=18dBm/tone  
5
Selected Over Temperature Performance Plots  
All data measured on a 2.4 mm connector based evaluation board at Vdd1 = Vdd2 = 5 V, Idq = 0.7 A (Id1 + Id2), and 50   
at all ports. Idg has been maintained at 700 mA under different temperature conditions.  
30  
25  
20  
15  
10  
5
0
-5  
-10  
-15  
-20  
-25  
-40° C  
25° C  
85° C  
-40° C  
25° C  
85° C  
0
35 36 37 38 39 40 41 42 43 44 45  
Frequency [GHz]  
35 36 37 38 39 40 41 42 43 44 45  
Frequency [GHz]  
Figure 7. S21(dB) Frequency Sweep over Temperature  
Figure 8. S11(dB) Frequency Sweep over Temperature  
0
-5  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-40° C  
25° C  
85° C  
-40° C  
25° C  
85° C  
-10  
-15  
-20  
-25  
35 36 37 38 39 40 41 42 43 44 45  
Frequency [GHz]  
35 36 37 38 39 40 41 42 43 44 45  
Frequency [GHz]  
Figure 9. S22(dB) Frequency Sweep over Temperature  
Figure 10. S12(dB) Frequency Sweep over Temperature  
-0.590  
-0.595  
-0.600  
-0.605  
-0.610  
-0.615  
-0.620  
-0.625  
-0.630  
-0.635  
-0.640  
-0.645  
31  
30  
29  
28  
27  
26  
25  
24  
23  
-40° C  
22  
21  
20  
25° C  
85° C  
38  
39  
40  
41  
42  
43  
44  
-60 -40 -20  
0
20  
40  
60  
80 100  
Frequency [GHz]  
Temperature [°C]  
Figure 11. P-1(dBm) Frequency Sweep over Temperature  
Figure 12. Typical Vg to obtain Idq = 700 mA over Temperature  
6
Detector Performance Plots  
1.5  
1.5  
1
1
0.5  
0.5  
0
0
Det_O @25° C  
Det_O @25° C  
Det_R @25° C  
Det_O @-40° C  
Det_R @-40° C  
Det_O @85° C  
Det_R @85° C  
Det_R @25° C  
-0.5  
-0.5  
-1  
Det_O @-40° C  
Det_R @-40° C  
Det_O @85° C  
Det_R @85° C  
-1  
-1.5  
-1.5  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
Pout [dBm]  
Pout [dBm]  
Figure 13. Detector voltages vs. Output Power at Freq = 40 GHz  
Figure 14. Detector voltages vs. Output Power at Freq = 41 GHz  
1.5  
1
1.5  
1
0.5  
0.5  
0
0
Det_O @25° C  
Det_O @25° C  
Det_R @25° C  
Det_R @25° C  
-0.5  
-0.5  
Det_O @-40° C  
Det_R @-40° C  
Det_O @85° C  
Det_R @85° C  
Det_O @-40° C  
Det_R @-40° C  
-1  
-1  
Det_O @85° C  
Det_R @85° C  
-1.5  
-1.5  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
Pout [dBm]  
Pout [dBm]  
Figure 15. Detector voltages vs. Output Power at Freq = 42 GHz  
Figure 16. Detector voltages vs. Output Power at Freq = 43 GHz  
1.5  
1
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.5  
0
Det_O @25° C  
Det_R @25° C  
-0.5  
Det_O @-40° C  
Det_R @-40° C  
Det_O @85° C  
Det_R @85° C  
-1  
DET_O  
Vdelta [V]  
0.2  
0.0  
-1.5  
0
5
10  
15  
20  
25  
30  
0
0.1  
0.2  
0.3  
Pout [W]  
0.4  
0.5  
0.6  
0.7  
Pout [dBm]  
Figure 17. Detector voltages vs. Output Power at Freq = 44 GHz  
Figure 18. Typical detector sensitivity vs. Output Power at Freq = 42 GHz  
7
Evaluation Board Description  
Recommended turn on sequence  
1
2
3
GND  
GND  
 Apply Vg1 and Vg2 at -1.5 V  
 Apply Vd1 and Vd2 at 0 V  
 Increase Vd to 5 V  
 Increase Vg of -1.5 V to approximately -0.6 V to obtain  
AVAGO  
Tech  
5 x 5 mm  
Idsq = 0.7 A  
AMGP  
6445  
YWWDNN  
 Apply RF Input not to exceed 20 dBm  
8
4
Turn off in reverse order  
Q104  
Table 4. Typical Test Conditions  
Pin  
Vd1,2  
5 V  
Drain Supply Voltage  
Quiescent Drain Current  
Gate Supply Voltage  
GND  
GND  
Idq = Id1 + Id2  
Vg1, 2  
700 mA  
-0.6  
7
6
5
Notes:  
Vg1 and Vg2 of -0.6 V may need be adjusted to obtain Idsq = 700 mA.  
Demo board circuit  
DET_0  
100 pF  
>
0.1 PF  
Vdd  
+5 V  
100 K:  
100 K:  
10 K:  
1
2
3
10 K:  
DET_0  
DET_R  
+5 V  
8
4
RF_IN  
RF_OUT  
10 K:  
10 K:  
Vout = DET_R – DET_0  
+
7
6
5
–5 V  
Figure 20.  
DET_R  
Vgg  
>
0.1 PF 100 pF  
Integrated Detector Application Circuit  
Figure 19.  
To obtain temperature compensated RF power detector  
function, a differential voltage between DET_R and DET_O  
must be obtained by using an operational amplifier in a  
differential mode configuration as shown in Figure 19.  
8
Part Number Ordering Information  
Devices per  
Package Dimension, PCB Layout and Tape and Reel  
information  
Part Number  
Container  
Container  
antistatic bag  
7Reel  
Please refer to Avago Technologies Application Note 5521,  
AMxP-xxxx production Assembly Process (Land Pattern B).  
AMGP-6445-BLKG  
AMGP-6445-TR1G  
AMGP-6445-TR2G  
10  
100  
500  
7Reel  
For product information and a complete list of distributors, please go to our web site: www.avagotech.com  
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.  
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved.  
AV02-3210EN - May 10, 2012  

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