概述
规格参数
数据手册STD123S 概述
NPN Silicon Transistor NPN硅晶体管 小信号双极晶体管
STD123S 规格参数
| 生命周期： | Contact Manufacturer | 包装说明： | , |
| Reach Compliance Code： | unknown | 风险等级： | 5.74 |
| 最大集电极电流 (IC)： | 1 A | 配置： | Single |
| 最小直流电流增益 (hFE)： | 150 | 最高工作温度： | 150 °C |
| 极性/信道类型： | NPN | 最大功率耗散 (Abs)： | 0.35 W |
| 子类别： | Other Transistors | 表面贴装： | YES |
| Base Number Matches： | 1 |
STD123S 数据手册
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PDF下载STD123S
Semiconductor
NPN Silicon Transistor
Features
• Low saturation medium current application
• Extremely low collector saturation voltage
• Suitable for low voltage large current drivers
• High DC current gain and large current capability
• Low on resistance : RON=0.6Ω(Max.) (IB=1mA)
Ordering Information
Type NO.
Marking
Package Code
SOT-23
STD123S
123
Outline Dimensions
unit : mm
2.4±0.1
1.30±0.1
1
3
2
0.45~0.60
0.2 Min.
PIN Connections
1. Base
2. Emitter
3. Collector
KST-2059-002
1
STD123S
Absolute maximum ratings
Characteristic
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
20
Unit
V
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
15
V
6.5
V
Collector current
1
A
*
Collector dissipation
PC
350
mW
°C
°C
Junction temperature
Tj
150
Storage temperature
Tstg
-55~150
* : Package mounted on 99.5% alumina 10×8×0.1mm
Electrical Characteristics
(Ta=25°C)
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
Min. Typ. Max. Unit
IC=50µA, IE=0
20
15
6.5
-
-
-
V
IC=1mA, IB=0
-
-
V
IE=50µA, IC=0
-
-
V
VCB=20V, IE=0
-
0.1
0.1
-
µA
µA
-
Emitter cut-off current
IEBO
VEB=6V, IC=0
-
-
DC current gain
hFE
VCE=1V, IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC=50mA
VCB=10V, IE=0, f=1MHz
f=1KHz, IB=1mA, VIN=0.3V
150
-
-
Collector-Emitter saturation voltage
Transistor frequency
VCE(sat)
fT
0.1
260
5
0.3
-
V
-
MHz
pF
Ω
Collector output capacitance
On resistance
Cob
-
-
RON
-
0.6
-
KST-2059-002
2
STD123S
Electrical Characteristic Curves
Fig. 2 VCE(sat)-IC
Fig. 1 PC -Ta
Fig. 2 COb-VCB
Fig. 4hFE-IC
Fig. 5 RON-IB
KST-2059-002
3
STD123S 相关器件
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| STD12N05 | STMICROELECTRONICS | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | 获取价格 |
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| STD12N05-1 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 12A I(D) | TO-251 | 获取价格 |
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| STD12N05L | STMICROELECTRONICS | N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | 获取价格 |
|
| STD12N05L-1 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 12A I(D) | TO-251 | 获取价格 |
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