SI5312-H [AUK]
IRED; IRED
| 型号： | SI5312-H |
| 厂家： | 
AUK CORP |
| 描述： | IRED |
| 文件： | 总3页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SI5312-H / SI5312-H(B)
Semiconductor
IRED
Features
• Colorless transparency lens type
• φ5mm(T-13/4) all plastic mold type
• Low power consumption
• High radiant intensity
Applications
• Infrared remote control and free air transmission systems with low forward voltage and
comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors.
Outline Dimensions
unit : mm
STRAIGHT TYPE
STOPPER TYPE
0.2
4.8±
0.2
4.8±
0.2
9.0±
0.2
9.0±
0.2
1.2±
0.2
1.2±
3.8±0.5
0.5
0.5
23.0 M IN
23.0 M IN
1.0 M IN
1.0 M IN
2.54 NOM
2.54 NOM
0.2
5.8±
0.2
5.8±
1
2
1
2
PIN Connections
1.Anode
2.Cathode
KLI-8003-001
1
SI5312-H / SI5312-H(B)
Absolute maximum ratings
Characteristic
Symbol
PD
Ratings
Unit
mW
mA
A
Power Dissipation
150
Forward Current
*1Peak Forward Current
IF
100
IFP
1
Reverse Voltage
VR
4
V
-25∼ 85
℃
Operating Temperature
Storage Temperature
*2Soldering Temperature
Topr
Tstg
Tsol
-30∼ 100
℃
260℃ for 5 seconds
*1.Duty ratio = 1/16, Pulse width = 0.1ms
*2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package
Electrical Characteristics
Characteristic
Symbol
Test Condition
IF= 50mA
IF= 50mA
IF= 50mA
IF= 50mA
VR=4V
Min. Typ. Max.
Unit
Forward Voltage
VF
IE
-
30
-
1.3
70
950
50
-
1.7
-
V
mW/Sr
nm
Radiant Intensity
Peak Wavelength
Spectrum Bandwidth
Reverse Current
*3Half angle
-
λP
Δλ
-
-
nm
-
10
-
uA
I
R
θ1/2
IF= 50mA
-
±8
deg
*3. θ1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity
KLI-8003-001
2
SI5312-H / SI5312-H(B)
Characteristic Diagrams
Fig. 1 IF - VF
Fig. 2 IE - IF
Forward Voltage VF [V]
Forward Current IF [mA]
Fig. 3 IF – Ta
Fig.4 Spectrum Distribution
Wavelength λ [nm]
Ambient Temperature Ta [℃]
Fig. 5 Radiation Diagram
100
50
0
50
100
Relative Radiant Intensity IE [%]
KLI-8003-001
3
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