PN2222 [AUK]
NPN Silicon Transistor; NPN硅晶体管
| 型号： | PN2222 |
| 厂家： | 
AUK CORP |
| 描述： | NPN Silicon Transistor |
| 文件： | 总3页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PN2222
Semiconductor
NPN Silicon Transistor
Descriptions
• General purpose application
• Switching application
Features
• Low Leakage current
• Low collector saturation voltage enabling low voltage operation
• Complementary pair with PN2907
Ordering Information
Type NO.
Marking
Package Code
PN2222
PN2222
TO-92
Outline Dimensions
unit : mm
3.45±0.1
2.25±0.1
4.5±0.1
0.4±0.02
2.06±0.1
1.27 Typ.
2.54 Typ.
1 2 3
PIN Connections
1. Emitter
2. Base
3. Collector
KST-9038-000
1
PN2222
Absolute maximum ratings
Characteristic
Ta=25°C
Symbol
VCBO
VCEO
VEBO
IC
Ratings
60
Unit
V
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
30
V
5
V
600
mA
mW
°C
Collector dissipation
PC
625
Junction temperature
Storage temperature range
Tj
150
Tstg
-55~150
°C
Electrical Characteristics
Characteristic
Ta=25°C
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Test Condition
Min. Typ. Max. Unit
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
IC=10µA, IE=0
60
30
5
-
-
-
-
-
-
-
V
IC=10mA, IB=0
IE=10µA, IC=0
-
V
-
V
VCB=60V, IE=0
-
20
-
nA
-
DC current gain
hFE
VCE=10V, IC=10mA
IC=150mA, IB=15mA
100
-
Collector-Emitter saturation voltage
VCE(sat)
0.4
V
VCE=20V, IC=20mA,
f=100MHz
Transition frequency
fT
250
-
-
MHz
Collector output capacitance
Delay time
Cob
td
tr
VCB=10V, IE=0, f=1MHz
-
-
-
-
-
-
-
-
-
-
8
pF
ns
ns
ns
ns
10
25
225
60
VCC=30Vdc, VBE(off)=0.5Vdc,
IC=150mAdc, IB1=15mAdc
Rise time
Storage time
Fall Time
ts
VCC=30Vdc,IC=150mAdc,
IB1=IB2=15mAdc
tf
KST-9038-000
2
PN2222
Electrical Characteristic Curves
Fig. 2 hFE-IC
Fig. 1 PC-Ta
Fig. 3 VCE(sat)-IC
Fig. 4 Cob-VCB
KST-9038-000
3
相关型号：
PN2222-L-AP
Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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