U3759B-NFNG3 [ATMEL]

Telephone Multifunction Circuit, PDSO28, SSOP-28;
U3759B-NFNG3
型号: U3759B-NFNG3
厂家: ATMEL    ATMEL
描述:

Telephone Multifunction Circuit, PDSO28, SSOP-28

电信 光电二极管 电信集成电路
文件: 总13页 (文件大小:111K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
U3759B-N  
Universal Telephone IC – All Functions Integrated  
Description  
Atmel Wireless  
&
Microcontrollers’ low-voltage  
telephone circuit U3759B-N performs the speech and line Electrostatic sensitive device.  
interface functions and the tone ringer required in an Observe precautions for handling.  
electronic telephone set. Operation below 15 mA is pos-  
sible with reduced performance.  
Features  
Speech Circuit  
Tone Ringer  
D 2-tone ringer  
D Adjustable DC characteristic  
D Symmetrical input of microphone amplifier  
D Adjustable volume  
D RC oscillator  
D Adjustable threshold  
D Receiving amplifier for dynamic or  
piezo-electric earpieces  
Benefits  
D Automatic line-loss compensation  
D Low number of external components  
D High quality through one IC solution  
Ordering Information  
Extended Type Number  
U3759B-NFN  
Package  
SSO28  
SSO28  
Remarks  
Tube  
U3759B-NFNG3  
Taped and reeled  
Rev. A3, 17-Sep-01  
1 (13)  
U3759B-N  
Block Diagram / Applications  
Figure 19. Block diagram / applications  
2 (13)  
Rev. A3, 17-Sep-01  
U3759B-N  
Pin Description  
VRING  
VRIAC  
AGC  
1
2
3
4
5
6
7
8
9
28  
27  
26  
25  
24  
23  
22  
21  
20  
RCK  
OUT  
THA  
VDD  
ST  
PRIVACY  
MUTE  
n.c.  
CLIM  
RECO1  
RECO2  
RECIN  
PRIND  
VI  
PROD  
n.c.  
MASKIN  
n.c.  
19  
18  
17  
10  
11  
12  
GND  
MIC1  
MIC2  
MICO  
TIN  
13  
14  
16 RDC  
VL  
15  
Figure 20. Pinning SSO28  
Pin  
Symbol  
Function  
Configuration  
1
VRING DC supply voltage for the tone ringer is lim-  
ited to 30 V with integrated Z-diode.  
VRING  
OUT  
200  
30V  
50V  
6.5K  
PD  
PD  
Rev. A3, 17-Sep-01  
3 (13)  
U3759B-N  
Pin  
Symbol  
Function  
Configuration  
2
RCK  
RC clock oscillator for ringer  
3.4V  
0.8V  
RCK  
6V  
6V  
PD  
3
OUT  
VDD  
Buzzer output  
VRING  
OUT  
200  
30V  
6.5K  
PD  
50V  
PD  
4
5
Supply output for dialer part  
VL  
I
= 750 mA out of VDD for external  
DD max  
functions  
6V  
VDD  
6V  
PD  
MUTE Active Low: MUTE < 150 mV  
Forcing MUTE to GND mutes the micro-  
phone and decreases the earpiece signal by  
typically 29 dB; no pull up circuit allowed.  
Dialer/mC port must be open drain.  
VBG  
30K  
MUTE  
MUTE  
6.7V  
PD  
6
7
n.c.  
Not connected  
PROD During Low level (< 100 mV) handset mute is  
active.  
VI  
2.5u  
PROD  
VBG  
30k  
30k  
PD  
6V  
8
9
n.c.  
Not connected  
100k  
MASKIN  
MASKIN Short mute during pulse dialing, active high  
During MASK an internal npn-transistor  
shortens VL against VI.  
PD  
6V  
50k  
10  
11  
n.c.  
Not connected  
GND  
4 (13)  
Rev. A3, 17-Sep-01  
U3759B-N  
Pin  
Symbol  
Function  
Configuration  
12  
MIC 1 Inverting input of microphone amplifier  
VI  
1V  
13  
MIC 2 Non-inverting input of microphone amplifier  
50K  
50K  
PD  
MIC1  
MIC2  
1V  
VI  
PD  
14  
MICO Transmit pre-amp output which is normally  
capacitively coupled to Pin TIN  
Coupling point for DTMF signal from dialer/  
mC  
VI  
1V  
16K  
Input for prefiltering and level adjustment  
circuit of incoming dialer signal  
(see application circuit)  
MICO  
PD  
15  
16  
VL  
Positive supply voltage input to the device.  
The current through this pin is modulated by  
the transmit signal.  
VL  
16V  
PD  
RDC  
PD  
VL  
RDC  
An external resistor (1 W) is required from  
this pin to GND to control the DC input im-  
pedance of the circuit. It has a nominal value  
of 39 W for low-voltage operation. Values up  
to 100 W may be used to increase the avail-  
able transmit output voltage swing at the ex-  
pense of low-voltage operation.  
AGC  
RDC  
PD  
PD  
17  
18  
TIN  
Input to the line output driver amplifier.  
Transmit AGC applied to this stage.  
1V  
5.6K  
TIN  
16V  
PD  
V
I
This internal voltage bias line must be con-  
nected to VL via an external resistor which  
dominates the AC input impedance of the cir-  
cuit and should be 680 for an 600-W input  
impedance or 1.2 kfor a 900-input im-  
pedance.  
VI  
16V  
PD  
VL  
PRIND  
19  
PRIND PRIVACY indication pin  
Open collector with minimum 1 mA drive  
current to GND when PRIVACY = active  
6.7V  
PD  
Rev. A3, 17-Sep-01  
5 (13)  
U3759B-N  
Pin  
Symbol  
Function  
Configuration  
20  
RECIN Receive amplifier input. The receiving ampli-  
fication is regulated by an AGC.  
60K  
RECIN  
21  
22  
RECO2 Output of the receive amplifier. Dynamic  
transducers with a minimum impedance of  
RECO1 100 W can be directly driven by these outputs.  
VL  
60K  
1V  
RECO2  
RECO1  
6.7V  
PD  
VL  
23  
24  
CLIM  
Time constant of anticlipping in transmit path.  
CLIM w 2.2 mF  
CLIM = GND: anticlipping inactive  
IDC  
CLIM  
6V  
PD  
PRI-  
Toggle input for handset mute  
VI  
VACY Negative trigger pulse activates handset mute  
and privacy indication output (PRIND).  
2.5u  
1k  
2.5u  
PRIVACY  
PD  
6V  
50k  
50k  
25  
26  
ST  
The output of the sidetone cancellation signal,  
which requires a balanced impedance of 8 to  
10 times the subscribers line impedance to be  
connected to Pin VL.  
ST  
16V  
PD  
THA  
Ringer threshold adjustment  
VRIAC  
160K  
140K  
GND  
12K  
1V  
20K  
6V  
6V  
THA  
AGC  
PD  
VL  
27  
28  
AGC  
The range of transmit and receive gain varia-  
tions between short and long loops may be  
adjusted by connecting a resistor R  
from  
AGC  
this pin to (GND). This pin can be left open to  
set AGC out of action.  
PD  
RDC  
PD  
VRIAC Ringing supply  
70K  
10K  
VRIAC  
50V  
PD  
6 (13)  
Rev. A3, 17-Sep-01  
U3759B-N  
Absolute Maximum Ratings  
Parameters  
Line current  
Symbol  
Value  
Unit  
mA  
V
I
140  
14  
L
DC line voltage  
V
L
DC voltage at Pins 1 to 11 and 33 to 44  
Junction temperature  
V
5.5  
V
DC  
T
125  
°C  
°C  
°C  
W
j
Ambient temperature  
T
amb  
–25 to +75  
–55 to +150  
0.9  
Storage temperature  
T
stg  
Total power dissipation, T  
= 60°C  
SSO28  
P
tot  
amb  
ESD withstand voltage 1 kV according to ESD standard S5.1 (HBM)  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
Junction ambient  
SSO28  
R
70  
K/W  
thJA  
Electrical Characteristics: Speech Circuit  
Reference point Pin GND, f = 1000 Hz, 0 dBm = 775 mV  
R
= 39 / 1 W, T = 25°C, unless otherwise specified,  
rms, DC amb  
refer to “Basic Test Circuit”. CLIM = GND  
Parameters  
Line voltage  
Test Conditions / Pin  
I = 8 mA  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
L
1.4  
3.85  
6.55  
V
V
V
V
L
I = 20 mA  
3.6  
5.9  
6.9  
4.1  
7.2  
8.2  
L
I = 73 mA  
L
I = 100 mA  
L
Transmit and sidetone  
Input resistance  
R
R
45  
80  
120  
48.8  
0.5  
kΩ  
dB  
dB  
i
i
Gain  
I = 20 mA, S5 = open  
L
G
s
46.8  
–0.5  
47.8  
Gain change with current  
I = 20 to 60 mA  
L
DG  
S
R
= infinite  
AGC  
Gain deviation  
T
= –10 to +60°C  
DG  
–0.5  
–7  
0.5  
dB  
amb  
S
I = 20 mA  
L
Line-loss compensation  
Distortion at line  
R
= 12 kW, I = 73 mA  
DG  
s
–6  
–4.8  
2
dB  
%
AGC  
L
I = 20 mA, S5 = open  
L
d
t
V = 0.775 V  
L
rms  
Max. output voltage at line I = 20 mA, V = 10 mV,  
V
Lmax  
1.2  
3.5  
dBm  
ms  
L
mic  
d x 5%  
CLIM = 2.2 mF, S = open  
1
Attack time transmit  
anticlipping  
CLIM = 2.2 mF  
t
att  
Noise at line weighted  
psophometrically  
I > 20 mA, G = 48dB  
n
o
– 72  
20  
dBmp  
dB  
L
S
Sidetone reduction  
I y 20 mA  
L
G
STA  
10  
15  
Rev. A3, 17-Sep-01  
7 (13)  
U3759B-N  
Electrical Characteristics: Speech Circuit (continued)  
Parameters  
Receiving amplifier  
Gain  
Test Conditions / Pin  
Symbol  
Min.  
Typ.  
Max.  
Unit  
I w 20 mA  
G
R
3
5
dB  
dB  
L
Gain change with current  
I = 20 to 60 mA  
DG  
DG  
DG  
–0.5  
0.5  
L
R
R
R
R
= infinite  
AGC  
Gain deviation  
T
L
= –10 to +60°C  
–0.3  
–7  
0.7  
dB  
amb  
I = 20 mA  
Line-loss compensation  
I = 73 mA  
–6  
–4.7  
–71  
dB  
L
Receiving noise at  
earphone weighted  
psophometrially  
I = 73 mA  
n
–77.5  
dBm  
L
i
Gain change when muted  
Output voltage push-pull  
I y 20 mA  
G
24  
29  
34  
2.5  
6.3  
dB  
L
RM  
I y 20 mA, Z = 68 nF,  
V
RECO  
0.8  
0.9  
V
rms  
L
ear  
100 W in series, d 2%  
Ear protection differential  
I = 40 mA, V = 4 V  
,
V
1.3  
1.6  
V
rms  
L
gen  
rms  
ear  
Z
= 68 nF + 100 W  
ear  
Supply voltage  
Output voltage  
I y 20 mA dialing mode  
L
V
2.0  
V
DD  
Note: Output must be limited  
externally to max. 5.5 V  
Available current for  
peripherals  
I y 20 mA dialing mode  
L
I
750  
mA  
DD  
Transmit  
Maximum output voltage  
swing at line  
I = 20 mA,  
V
3.4  
4
Vpp  
dB  
L
L max  
V
MIC  
= 50 mV  
rms  
Mute suppression transmit I = 20 mA  
G
SPRIV  
60  
L
with privacy function  
Electrical Characteristics Tone Ringer  
f
= 4 kHz, V  
= 20 V, T  
= 25_C, reference point GND, unless otherwise specified  
RCK  
RING  
amb  
Parameter  
Test Conditions / Pins  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Supply current,  
outputs open  
V
RIAC  
= 20 V  
I
2.1  
3.8  
mA  
RING  
Switch-on threshold  
Switch-off threshold  
Ringing frequency  
V
V
, THA = open  
V
8
9
10  
V
V
RIAC  
RON  
V
ROFF  
5.0  
5.6  
6.5  
RIAC  
R = 150 k, C = 1 nF  
f
f
937  
752  
1010  
808  
1083  
868  
Hz  
Hz  
1H  
V
RIAC  
> V  
RON  
1L  
Range of external compo-  
nents for R/ C oscillator  
C
R
1000  
50  
2200  
330  
pF  
kW  
Audio sequence frequency  
Output voltage swing  
Turn-off delay  
f
11.5  
21  
12.5  
23  
14.0  
Hz  
2
V
= 25 V, C = 68 nF  
V
V
pp  
Ring  
out  
out  
off  
See figure 15  
t
65  
100  
ms  
Remark: Max. current into internal Zener Diode at Pin VRING = 20 mA  
8 (13)  
Rev. A3, 17-Sep-01  
U3759B-N  
Volt  
VRING  
0
t
t
t
VRIAC  
0
OUT  
Melody  
0
t
off  
Figure 21. Turn-off delay time  
Note  
The oscillator frequency is defined by R and C at Pin oscillator frequency by internal deviders. So f , f and  
2
1H  
RCK.  
f
are given by:  
1L  
1
fOsc  
320  
fOsc  
4
fOsc  
5
fOsc  
[
f2 +  
; f1H  
+
; f1L +  
[
]
1.594   C   R ) 3809 W  
The audio sequence frequency f and the ratio of low For more information of adjusting ringer melody see  
2
frequency f and high frequency f are derived from document “Application and Adjustment Hints ”  
1L  
1H  
Rev. A3, 17-Sep-01  
9 (13)  
U3759B-N  
Basic Test Circuit  
t o e s T t e r  
Figure 22. Basic test circuit  
10 (13)  
Rev. A3, 17-Sep-01  
U3759B-N  
Equations for Electrical Characteristic Parameters of the Speech Circuit  
The equations refer to the basic test circuit. If not otherwise specified, the switches in the basic test circuit are inactive.  
Transmit gain  
Receiving gain  
VL  
VMIC  
VRECO  
VL  
GS + 20   log ǒ Ǔ  
GR + 20   log ǒ Ǔ  
V
MIC  
= 3 mV/1 kHz, S5 = open  
RX-mode: V = 300 mV/1 kHz, S7b  
gen  
Line-loss compensation transmit  
Sidetone reduction  
DGS + GS(at IL + 73 mA)–GS(at IL + 20 mA)  
VL  
VRECO  
GSTA + 20   logǒ Ǔ(in TX–mode) ) GR  
TX-mode: V  
= 3 mV/1 kHz, S5 = open  
MIC  
TX-mode: V  
= 3 mV/1 kHz, S5 = open  
MIC  
Line-loss compensation receive  
Input impedance of microphone amplifier  
50 k  
DGR + GR(at IL + 73 mA)–GR(at IL + 20 mA)  
Ri +  
VL  
VL  
(S6 + closed)  
ǒ
–1Ǔ  
RX-mode: V = 300 mV/1 kHz, S7b  
gen  
(S6 + open)  
TX-mode: V  
= 3 mV/1 kHz, S5 = open  
MIC  
Gain change when muted  
VRECO  
VL  
VRECO  
VL  
GRM + 20   log  
(Mute + inactive)–20   log  
(Mute + active)  
V
gen  
= 100 mV/1 kHz, S5 = open, S8 = open  
Rev. A3, 17-Sep-01  
11 (13)  
U3759B-N  
Packaging Information  
Package SSO28  
Dimensions in mm  
9.25  
8.75  
12.9  
12.7  
7.5  
7.3  
2.35  
0.25  
0.30  
0.80  
0.25  
0.10  
10.50  
10.20  
10.4  
technical drawings  
according to DIN  
specifications  
1
2
12 (13)  
Rev. A3, 17-Sep-01  
U3759B-N  
Ozone Depleting Substances Policy Statement  
It is the policy of Atmel Germany GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid  
their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these  
substances.  
Atmel Germany GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed  
in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Atmel Germany GmbH can certify that our semiconductors are not manufactured with ozone depleting substances  
and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer  
application by the customer. Should the buyer use Atmel Wireless & Microcontrollers products for any unintended  
or unauthorized application, the buyer shall indemnify Atmel Wireless & Microcontrollers against all claims,  
costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death  
associated with such unintended or unauthorized use.  
Data sheets can also be retrieved from the Internet:  
http://www.atmel–wm.com  
Atmel Germany GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423  
Rev. A3, 17-Sep-01  
13 (13)  

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