AT60142E-DD15MMQ [ATMEL]
Rad Hard 512K x 8 Very Low Power CMOS SRAM; 抗辐射512K ×8的超低功耗CMOS SRAM
| 型号： | AT60142E-DD15MMQ |
| 厂家： | 
ATMEL |
| 描述： | Rad Hard 512K x 8 Very Low Power CMOS SRAM |
| 文件： | 总17页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• Operating Voltage: 3.3V
• Access Time:
– 15 ns (Preview) for 3.3V biased only (AT60142E)
– 17 ns and 20 ns for 5V Tolerant (AT60142ET)
• Very Low Power Consumption
– Active: 810 mW (Max) @ 15 ns
– Standby: 215 µW (Typ)
• Wide Temperature Range: -55 to +125°C
• 500 Mils Width Package
• TTL-Compatible Inputs and Outputs
• Asynchronous
Rad Hard
• Designed on 0.25 Micron Process
• No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2
• Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
• 500 Mils Wide FP36 Package
512K x 8
Very Low Power
CMOS SRAM
• ESD Better than 4000V
Description
The AT60142E/ET are very low power CMOS static RAM organized as 524 288 x 8
bits.
AT60142E
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
AT60142ET
Utilizing an array of six transistors (6T) memory cells, the AT60142E/ET combine an
extremely low standby supply current (Typical value = 65 µA) with a fast access time
at 15 ns over the full military temperature range. The high stability of the 6T cell pro-
vides excellent protection against soft errors due to noise.
The E version is biased at 3.3 V and is not 5V tolerant: it is available to 15(1) and 20 ns
specification.
The ET(1) version is a variant allowing for 5V tolerance: it is available in 17 ns and 20
ns specification.
The AT60142E/ET are processed according to the methods of the latest revision of
the MIL PRF 38535 or ESA SCC 9000.
It is produced on a radiation hardened 0.25 µm CMOS process.
Note:
1. Preliminary: contact factory for availability.
Rev. 4156F–AERO–06/04
1
AT60142E/ET
Block Diagram
Pin Configuration
A0
A1
NC
1
2
3
4
5
6
7
8
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
A18
A17
A2
A3
A16
A15
A4
CS
OE
I/O1
I/O8
I/O7
GND
Vcc
I/O6
I/O2
Vcc
9
10
11
12
13
14
15
16
17
18
GND
I/O3
I/O4
WE
I/O5
A14
A5
A6
A7
A8
A9
A13
A12
A11
A10
VRef
2
4156F–AERO–06/04
Pin Description
Table 1. Pin Names
Name
Description
A0 - A18
I/O1 - I/O8
CS
Address Inputs
Data Input/Output
Chip Select
WE
Write Enable
OE
Output Enable
Power Supply
Vcc
VRef
GND
Internal Reference Voltage Output
Ground
Table 2. Truth Table(1)
CS
WE
OE
Inputs/Outputs
Mode
Deselect/
H
X
X
Z
Power-down
L
L
L
H
L
L
X
H
Data Out
Data In
Z
Read
Write
H
Output Disable
Note:
1. L=low, H=high, X= H or H, Z=high impedance.
3
AT60142E/ET
4156F–AERO–06/04
AT60142E/ET
Decoupling
Decoupling capacitors closed to the device
AT60142
Vcc
Vcc
Recommended
value:
Recommended
value:
28
27
100 nF
9
Vcc
GND
Vcc
100 nF
10
GND
Mandatory Capacitor
19
VRef
Recommended
value:
10 µF
4
4156F–AERO–06/04
Electrical Characteristics
Absolute Maximum Ratings*
*NOTE:
Stresses beyond those listed under "Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions
beyond those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect device reliability.
Supply Voltage to GND Potential:.........................-0.5V + 4.6V
DC Input Voltage:.....................................GND -0.5V to 4.6V(1)
DC Output Voltage High Z State:................GND -0.5V to 4.6V
Storage Temperature: ................................... -65°C to + 150°C
Output Current Into Outputs (Low): ............................... 20 mA
Electro Statics Discharge Voltage:.... > 4001V (MIL STD 883D
Method 3015.3)
Note:
1. 7V for ET version.
Military Operating Range
Operating Voltage
3.3 + 0.3V
Operating Temperature
Military
-55°C to + 125°C
Recommended DC Operating Conditions
Parameter
Description
Min
Typ
Max
3.6
Unit
V
Vcc
Supply voltage
Ground
3
3.3
0.0
0.0
–
GND
VIL
0.0
0.0
V
Input low voltage
Input high voltage
GND - 0.3
2.2
0.8
V
VIH
VCC + 0.3(1)
V
Note:
1. 5.8V for ET version
Capacitance
Parameter
Description
Min
–
Typ
–
Max
8
Unit
pF
(1)
Cin
Input low voltage
Output high voltage
(1)
Cout
–
–
8
pF
Note:
1. Guaranteed but not tested.
5
AT60142E/ET
4156F–AERO–06/04
AT60142E/ET
DC Parameters
Parameter
Description
Minimum
Typical
Maximum
Unit
IIX (1)
Input leakage current
-1
–
1
µA
Output leakage
current
IOZ(1)
-1
–
1
µA
VOL (2)
VOH (3)
Output low voltage
Output high voltage
–
–
–
0.4
–
V
V
2.4
1.
2.
3.
GND < VIN < VCC, GND < VOUT < VCC Output Disabled.
VCC min. IOL = 8 mA.
VCC min. IOH = -4 mA.
Consumption
AT60142E -15 (1)
AT60142ET-17(1)
AT60142E -20
AT60142ET -20(1)
Symbol
Description
Unit
Value
Standby supply
current
(2)
ICCSB
4
3
4
3
mA
max
Standby supply
current
(3)
ICCSB1
mA
mA
max
max
Dynamic operating
current
(4)
ICCOP
225
220
1.
2.
3.
4.
Preliminary
CS >VIH
CS > VCC - 0.3V
F = 1/TAVAV, Iout = 0 mA, WE = OE = VIH, VIN = GND/VCC, VCC max.
6
4156F–AERO–06/04
AC Characteristics
Temperature Range:................................................ -55 +125°C
Supply Voltage:........................................................ 3.3 +0.3V
Input Pulse Levels:.................................................. GND to 3.0V
Input Rise and Fall Times:....................................... 3ns (10 - 90%)
Input and Output Timing Reference Levels:............ 1.5V
VRef Capacitor: ....................................................... 10 µF
Output Loading IOL/IOH:............................................ See Figure 1
Figure 1. AC Test Loads Waveforms
Data Retention Mode
Atmel CMOS RAM's are designed with battery backup in mind. Data retention voltage
and supply current are guaranteed over temperature. The following rules insure data
retention:
1. During data retention chip select CS must be held high within VCC to VCC -0.2V.
2. Output Enable (OE) should be held high to keep the RAM outputs high imped-
ance, minimizing power dissipation.
3. During power-up and power-down transitions CS and OE must be kept between
VCC + 0.3V and 70% of VCC
.
4. The RAM can begin operation > tR ns after VCC reaches the minimum operation
voltages (3V).
Figure 2. Data Retention Timing
7
AT60142E/ET
4156F–AERO–06/04
AT60142E/ET
Data Retention Characteristics
Parameter
Description
Min
Typ TA = 25°C
Max
Unit
VCC for data
retention
VCCDR
2.0
–
–
V
Chip deselect
to data
tCDR
0.0
–
–
ns
retention time
Operation
recovery time
(1)
tR
tAVAV
–
–
ns
Data retention
current
(2)
ICCDR
–
0.050
2.5
mA
1.
2.
TAVAV = Read cycle time.
CS = VCC, VIN = GND/VCC
.
8
4156F–AERO–06/04
Write Cycle
AT60142E-20
Symbol
Parameter
AT60142E-15(2) AT60142ET-17(2) AT60142ET -20(2)
Unit
Value
TAVAW
Write cycle time
15
0
17
0
20
0
ns
min
Address set-up
time
TAVWL
ns
min
Address valid to
end of write
TAVWH
TDVWH
TELWH
10
7
11
8
12
9
ns
ns
ns
min
min
min
Data set-up time
CS low to write
end
10
11
12
Write low to high
Z(1)
TWLQZ
TWLWH
TWHAX
TWHDX
TWHQX
7
10
0
8
11
0
9
12
0
ns
ns
ns
ns
ns
max
min
min
min
min
Write pulse width
Address hold
from end of write
Data hold time
3
3
3
Write high to low
Z(1)
3
3
3
Notes: 1. Parameters guaranteed, not tested, with output loading 5 pF. (See “AC Test Loads Waveforms” on page 7.)
2. Preliminary.
Read Cycle
AT60142E-20
AT60142ET -
Symbol
TAVAV
Parameter
AT60142E-15(2)
AT60142ET-17(2)
20(2)
20
20
3
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Value
Read cycle time
15
15
3
17
17
3
min
max
min
TAVQV
TAVQX
TELQV
TELQX
TEHQZ
TGLQV
TGLQX
TGHQZ
Address access time
Address valid to low Z
Chip-select access time
CS low to low Z
15
3
17
3
20
3
max
min
CS high to high Z(1)
Output Enable access time
OE low to low Z(1)
OE high to high Z (1)
7
8
9
max
max
min
max
7
8
9
0
0
0
7
8
9
Notes: 1. Parameters guaranteed, not tested, with output loading 5 pF. (See “AC Test Loads Waveforms” on page 7.)
2. Preliminary.
9
AT60142E/ET
4156F–AERO–06/04
AT60142E/ET
Figure 3. Write Cycle 1. WE Controlled, OE High During Write
E
Figure 4. Write Cycle 2. WE Controlled, OE Low
E
Figure 5. Write Cycle 3. CS Controlled(1)
E
Note:
The internal write time of the memory is defined by the overlap of CS Low and W LOW. Both signals must be activated to initiate
a write and either signal can terminate a write by going in active mode. The data input setup and hold timing should be refer-
enced to the active edge of the signal that terminates the write.
Data out is high impedance if OE= VIH.
10
4156F–AERO–06/04
Figure 6. Read Cycle nb 1: Address Controlled (CS = OE = VIL, WE = VIH)
Figure 7. Read Cycle nb 2: Chip Select Controlled (WE = VIH)
11
AT60142E/ET
4156F–AERO–06/04
AT60142E/ET
Ordering Information
Part Number
Temperature Range
25°C
Speed
Package
FP36.5
FP36.5
FP36.5
FP36.5
FP36.5
Die
Flow
Engineering Samples
Standard Mil
QML Q
AT60142E-DC20M-E
AT60142E-DC20M
20 ns/3.3V
20 ns/3.3V
20 ns/3.3V
20 ns/3.3V
20 ns/3.3V
20 ns/3.3V
20 ns/3.3V
20 ns/3.3V
-55° to +125°C
-55° to +125°C
-55° to +125°C
-55° to +125°C
25°C
AT60142E-DC20MMQ
AT60142E-DC20SMV
AT60142E-DC20SSB
AT60142E-DD20M-E(1)
AT60142E-DD20MMQ(1)
AT60142E-DD20SMV(1)
QML V
SCC B
Engineering Samples
QML Q
-55° to +125°C
-55° to +125°C
Die
Die
QML V
Preliminary
AT60142E-DC15M-E
AT60142E-DC15M
25°C
15 ns/3.3V
15 ns/3.3V
15 ns/3.3V
15 ns/3.3V
15 ns/3.3V
15 ns/3.3V
15 ns/3.3V
15 ns/3.3V
FP36.5
FP36.5
FP36.5
FP36.5
FP36.5
Die
Engineering Samples
Standard Mil
QML Q
-55° to +125°C
-55° to +125°C
-55° to +125°C
-55° to +125°C
25°C
AT60142E-DC15MMQ
AT60142E-DC15SMV
AT60142E-DC15SSB
AT60142E-DD15M-E(1)
AT60142E-DD15MMQ(1)
AT60142E-DD15SMV(1)
QML V
SCC B
Engineering Samples
QML Q
-55° to +125°C
-55° to +125°C
Die
Die
QML V
AT60142ET-DC20M-E
AT60142ET-DC20M
25°C
20 ns/5V tol.
20 ns/5V tol.
20 ns/5V tol.
20 ns/5V tol.
20 ns/5V tol.
20 ns/5V tol.
20 ns/5V tol.
20 ns/5V tol.
FP36.5
FP36.5
FP36.5
FP36.5
FP36.5
Die
Engineering Samples
Standard Mil
QML Q
-55° to +125°C
-55° to +125°C
-55° to +125°C
-55° to +125°C
25°C
AT60142ET-DC20MMQ
AT60142ET-DC20SSV
AT60142ET-DC20SSB
AT60142ET-DD20M-E(1)
AT60142ET-DD20MMQ(1)
AT60142ET-DD20SMS(1)
QML V
SCC B
Engineering Samples
QML Q
-55° to +125°C
-55° to +125°C
Die
Die
QML V
AT60142ET-DC17M-E
AT60142ET-DC17M
25°C
17 ns/5V tol.
17 ns/5V tol.
17 ns/5V tol.
17 ns/5V tol.
17 ns/5V tol.
17 ns/5V tol.
17 ns/5V tol.
17 ns/5V tol.
FP36.5
FP36.5
FP36.5
FP36.5
FP36.5
Die
Engineering Samples
Standard Mil
QML Q
-55° to +125°C
-55° to +125°C
-55° to +125°C
-55° to +125°C
25°C
AT60142ET-DC17MMQ
AT60142ET-DC17SSV
AT60142ET-DC17SSB
AT60142ET-DD17M-E(1)
AT60142ET-DD17MMQ(1)
AT60142ET-DD17SMS(1)
QML V
SCC B
Engineering Samples
QML Q
-55° to +125°C
-55° to +125°C
Die
Die
QML V
Note:
1. Contact Atmel for availability.
12
4156F–AERO–06/04
Package Drawings
36-lead Flat Pack (500 Mils)
13
AT60142E/ET
4156F–AERO–06/04
Atmel Corporation
Atmel Operations
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Memory
RF/Automotive
Theresienstrasse 2
Postfach 3535
74025 Heilbronn, Germany
Tel: (49) 71-31-67-0
Fax: (49) 71-31-67-2340
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
Regional Headquarters
Microcontrollers
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Europe
Atmel Sarl
Route des Arsenaux 41
Case Postale 80
CH-1705 Fribourg
Switzerland
Tel: (41) 26-426-5555
Fax: (41) 26-426-5500
Fax: 1(719) 540-1759
Biometrics/Imaging/Hi-Rel MPU/
High Speed Converters/RF Datacom
Avenue de Rochepleine
La Chantrerie
BP 70602
44306 Nantes Cedex 3, France
Tel: (33) 2-40-18-18-18
Fax: (33) 2-40-18-19-60
BP 123
38521 Saint-Egreve Cedex, France
Tel: (33) 4-76-58-30-00
Fax: (33) 4-76-58-34-80
Asia
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
ASIC/ASSP/Smart Cards
Zone Industrielle
13106 Rousset Cedex, France
Tel: (33) 4-42-53-60-00
Fax: (33) 4-42-53-60-01
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Fax: 1(719) 540-1759
Scottish Enterprise Technology Park
Maxwell Building
East Kilbride G75 0QR, Scotland
Tel: (44) 1355-803-000
Fax: (44) 1355-242-743
Literature Requests
www.atmel.com/literature
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard
warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are
granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use
as critical components in life support devices or systems.
© Atmel Corporation 2004. All rights reserved. Atmel® and combinations thereof are the registered trademarks of Atmel Corporation or its
subsidiaries. Other terms and product names may be the trademarks of others.
Printed on recycled paper.
4156F–AERO–06/04
/xM
Atmel Corporation
Atmel Operations
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Memory
RF/Automotive
Theresienstrasse 2
Postfach 3535
74025 Heilbronn, Germany
Tel: (49) 71-31-67-0
Fax: (49) 71-31-67-2340
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
Regional Headquarters
Microcontrollers
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Europe
Atmel Sarl
Route des Arsenaux 41
Case Postale 80
CH-1705 Fribourg
Switzerland
Tel: (41) 26-426-5555
Fax: (41) 26-426-5500
Fax: 1(719) 540-1759
Biometrics/Imaging/Hi-Rel MPU/
High Speed Converters/RF Datacom
Avenue de Rochepleine
La Chantrerie
BP 70602
44306 Nantes Cedex 3, France
Tel: (33) 2-40-18-18-18
Fax: (33) 2-40-18-19-60
BP 123
38521 Saint-Egreve Cedex, France
Tel: (33) 4-76-58-30-00
Fax: (33) 4-76-58-34-80
Asia
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
ASIC/ASSP/Smart Cards
Zone Industrielle
13106 Rousset Cedex, France
Tel: (33) 4-42-53-60-00
Fax: (33) 4-42-53-60-01
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Fax: 1(719) 540-1759
Scottish Enterprise Technology Park
Maxwell Building
East Kilbride G75 0QR, Scotland
Tel: (44) 1355-803-000
Fax: (44) 1355-242-743
Literature Requests
www.atmel.com/literature
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard
warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are
granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use
as critical components in life support devices or systems.
© Atmel Corporation 2004. All rights reserved. Atmel® and combinations thereof are the registered trademarks of Atmel Corporation or its
subsidiaries. Other terms and product names may be the trademarks of others.
Printed on recycled paper.
4156F–AERO–06/04
/xM
Atmel Corporation
Atmel Operations
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Memory
RF/Automotive
Theresienstrasse 2
Postfach 3535
74025 Heilbronn, Germany
Tel: (49) 71-31-67-0
Fax: (49) 71-31-67-2340
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
Regional Headquarters
Microcontrollers
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Europe
Atmel Sarl
Route des Arsenaux 41
Case Postale 80
CH-1705 Fribourg
Switzerland
Tel: (41) 26-426-5555
Fax: (41) 26-426-5500
Fax: 1(719) 540-1759
Biometrics/Imaging/Hi-Rel MPU/
High Speed Converters/RF Datacom
Avenue de Rochepleine
La Chantrerie
BP 70602
44306 Nantes Cedex 3, France
Tel: (33) 2-40-18-18-18
Fax: (33) 2-40-18-19-60
BP 123
38521 Saint-Egreve Cedex, France
Tel: (33) 4-76-58-30-00
Fax: (33) 4-76-58-34-80
Asia
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
ASIC/ASSP/Smart Cards
Zone Industrielle
13106 Rousset Cedex, France
Tel: (33) 4-42-53-60-00
Fax: (33) 4-42-53-60-01
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Fax: 1(719) 540-1759
Scottish Enterprise Technology Park
Maxwell Building
East Kilbride G75 0QR, Scotland
Tel: (44) 1355-803-000
Fax: (44) 1355-242-743
Literature Requests
www.atmel.com/literature
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard
warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are
granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use
as critical components in life support devices or systems.
© Atmel Corporation 2004. All rights reserved. Atmel® and combinations thereof are the registered trademarks of Atmel Corporation or its
subsidiaries. Other terms and product names may be the trademarks of others.
Printed on recycled paper.
4156F–AERO–06/04
/xM
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Literature Requests
www.atmel.com/literature
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard
warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any
errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and
does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are
granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use
as critical components in life support devices or systems.
© Atmel Corporation 2004. All rights reserved. Atmel® and combinations thereof are the registered trademarks of Atmel Corporation or its
subsidiaries. Other terms and product names may be the trademarks of others.
Printed on recycled paper.
4156F–AERO–06/04
/xM
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