AT28C16E-15JI [ATMEL]
16K 2K x 8 CMOS E2PROM; 16K 2K ×8 CMOS E2PROM
| 型号： | AT28C16E-15JI |
| 厂家： | 
ATMEL |
| 描述： | 16K 2K x 8 CMOS E2PROM |
| 文件： | 总12页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• Fast Read Access Time - 150 ns
• Fast Byte Write - 200 µs or 1 ms
• Self-Timed Byte Write Cycle
– Internal Address and Data Latches
– Internal Control Timer
– Automatic Clear Before Write
• Direct Microprocessor Control
– DATA POLLING
• Low Power
– 30 mA Active Current
16K (2K x 8)
Parallel
– 100 µA CMOS Standby Current
• High Reliability
– Endurance: 104 or 105 Cycles
– Data Retention: 10 Years
EEPROMs
• 5V ± 10% Supply
• CMOS & TTL Compatible Inputs and Outputs
• JEDEC Approved Byte Wide Pinout
• Commercial and Industrial Temperature Ranges
AT28C16
Description
The AT28C16 is a low-power, high-performance Electrically Erasable and Program-
mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory
organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable
(continued)
nonvolatile CMOS technology.
Pin Configurations
Pin Name
A0 - A10
CE
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
OE
WE
I/O0 - I/O7
NC
DC
Don’t Connect
PLCC
Top View
PDIP, SOIC
Top View
A7
A6
1
2
3
4
5
6
7
8
9
24 VCC
23 A8
A5
22 A9
A6
A5
A4
A3
A2
5
6
7
8
9
29 A8
28 A9
27 NC
26 NC
25 OE
24 A10
23 CE
22 I/O7
21 I/O6
A4
21 WE
20 OE
19 A10
18 CE
17 I/O7
16 I/O6
15 I/O5
14 I/O4
13 I/O3
A3
A2
A1
A0
A1 10
A0 11
I/O0
I/O1 10
I/O2 11
GND 12
NC 12
I/O0 13
Rev. 0540B–10/98
Note: PLCC package pins 1 and 17
are DON’T CONNECT.
1
The AT28C16 is accessed like a static RAM for the read or
write cycles without the need of external components. Dur-
ing a byte write, the address and data are latched inter-
nally, freeing the microprocessor address and data bus for
other operations. Following the initiation of a write cycle,
the device will go to a busy state and automatically clear
and write the latched data using an internal control timer.
The end of a write cycle can be determined by DATA
POLLING of I/O7. Once the end of a write cycle has been
detected, a new access for a read or a write can begin.
The CMOS technology offers fast access times of 150 ns at
low power dissipation. When the chip is deselected the
standby current is less than 100 µA.
Atmel’s 28C16 has additional features to ensure high qual-
ity and manufacturability. The device utilizes error correc-
tion internally for extended endurance and for improved
data retention characteristics. An extra 32 bytes of
EEPROM are available for device identification or tracking.
Block Diagram
Absolute Maximum Ratings*
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Temperature Under Bias................................ -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
All Input Voltages (including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground...................................-0.6V to +13.5V
AT28C16
2
AT28C16
Device Operation
READ: The AT28C16 is accessed like a Static RAM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in a high
impedance state whenever CE or OE is high. This dual line
control gives designers increased flexibility in preventing
bus contention.
cycle, an attempted read of the data being written results in
the complement of that data for I/O7 (the other outputs are
indeterminate). When the write cycle is finished, true data
appears on all outputs.
WRITE PROTECTION: Inadvertent writes to the device
are protected against in the following ways: (a) VCC
sense—if VCC is below 3.8V (typical) the write function is
inhibited; (b) VCC power on delay—once VCC has reached
3.8V the device will automatically time out 5 ms (typical)
before allowing a byte write; and (c) write inhibit—holding
any one of OE low, CE high or WE high inhibits byte write
cycles.
BYTE WRITE: Writing data into the AT28C16 is similar to
writing into a Static RAM. A low pulse on the WE or CE
input with OE high and CE or WE low (respectively) ini-
tiates a byte write. The address location is latched on the
last falling edge of WE (or CE); the new data is latched on
the first rising edge. Internally, the device performs a self-
clear before write. Once a byte write has been started, it
will automatically time itself to completion. Once a pro-
gramming operation has been initiated and for the duration
of tWC, a read operation will effectively be a polling opera-
tion.
CHIP CLEAR: The contents of the entire memory of the
AT28C16 may be set to the high state by the CHIP CLEAR
operation. By setting CE low and OE to 12 volts, the chip is
cleared when a 10 msec low pulse is applied to WE.
DEVICE IDENTIFICATION: An extra 32 bytes of
EEPROM memory are available to the user for device iden-
tification. By raising A9 to 12 ± 0.5V and using address
locations 7E0H to 7FFH the additional bytes may be written
to or read from in the same manner as the regular memory
array.
FAST BYTE WRITE: The AT28C16E offers a byte write
time of 200 µs maximum. This feature allows the entire
device to be rewritten in 0.4 seconds.
DATA POLLING: The AT28C16 provides DATA POLLING
to signal the completion of a write cycle. During a write
3
DC and AC Operating Range
AT28C16-15
0°C - 70°C
-40°C - 85°C
5V ± 10%
Com.
Operating
Temperature (Case)
Ind.
VCC Power Supply
Operating Modes
Mode
CE
VIL
VIL
VIH
X
OE
VIL
VIH
X(1)
X
WE
VIH
VIL
X
I/O
DOUT
DIN
Read
Write(2)
Standby/Write Inhibit
Write Inhibit
Write Inhibit
Output Disable
High Z
VIH
X
X
VIL
VIH
X
X
High Z
High Z
(3)
Chip Erase
VIL
VH
VIL
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. VH = 12.0V ± 0.5V
DC Characteristics
Symbol
Parameter
Condition
Min
Max
10
10
100
2
Units
ILI
Input Load Current
Output Leakage Current
VCC Standby Current CMOS
VIN = 0V to VCC + 1V
VI/O = 0V to VCC
µA
µA
µA
mA
mA
mA
mA
V
ILO
ISB1
CE = VCC - 0.3V to VCC + 1.0V
Com.
Ind.
ISB2
VCC Standby Current TTL
VCC Active Current AC
CE = 2.0V to VCC + 1.0V
3
Com.
Ind.
30
45
0.8
f = 5 MHz; IOUT = 0 mA
CE = VIL
ICC
VIL
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
VIH
VOL
VOH
2.0
2.4
V
IOL = 2.1 mA
.4
V
IOH = -400 µA
V
AT28C16
4
AT28C16
AC Read Characteristics
AT28C16-15
Symbol
Parameter
Min
Max
150
150
70
Units
ns
tACC
Address to Output Delay
(1)
tCE
CE to Output Delay
ns
(2)
tOE
OE to Output Delay
10
0
ns
(3)(4)
tDF
CE or OE High to Output Float
Output Hold from OE, CE or Address, whichever occurred first
50
ns
tOH
0
ns
AC Read Waveforms(1)(2)(3)(4)
Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC
.
.
3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
Output Test Load
tR, tF < 20 ns
Pin Capacitance
f = 1 MHz, T = 25°C(1)
Symbol
CIN
Typ
4
Max
6
Units
pF
Conditions
VIN = 0V
COUT
8
12
pF
VOUT = 0V
Note:
1. This parameter is characterized and is not 100% tested.
5
AC Write Characteristics
Symbol
Parameter
Min
10
50
100
50
10
0
Typ
Max
Units
ns
t
AS, tOES
Address, OE Set-up Time
Address Hold Time
tAH
tWP
tDS
ns
Write Pulse Width (WE or CE)
Data Set-up Time
1000
ns
ns
t
t
DH, tOEH
CS, tCH
Data, OE Hold Time
ns
CE to WE and WE to CE Set-up and Hold Time
ns
AT28C16
AT28C16E
0.5
1.0
ms
µs
tWC
Write Cycle Time
100
200
AC Write Waveforms
WE Controlled
CE Controlled
AT28C16
6
AT28C16
Data Polling Characteristics(1)
Symbol
Parameter
Min
10
Typ
Max
Units
ns
tDH
Data Hold Time
tOEH
tOE
OE Hold Time
10
ns
OE to Output Delay(2)
Write Recovery Time
ns
tWR
0
ns
Notes: 1. These parameters are characterized and not 100% tested.
2. See AC Characteristics.
Data Polling Waveforms
Chip Erase Waveforms
tS = tH = 1 µsec (min.)
t
W = 10 msec (min.)
VH = 12.0V ± 0.5V
7
AT28C16
8
AT28C16
Ordering Information(1)
I
CC (mA)
tACC
(ns)
Active
Standby
Ordering Code
Package
Operation Range
150
30
0.1
AT28C16(E)-15JC
AT28C16(E)-15PC
AT28C16(E)-15SC
32J
Commercial
24P6
24S
(0°C to 70°C)
45
0.1
AT28C16(E)-15JI
AT28C16(E)-15PI
AT28C16(E)-15SI
32J
Industrial
24P6
24S
(-40°C to 85°C)
Notes: 1. See Valid Part Numbers table below.
2. The 28C16 200 ns and 250 ns speed selections have been removed from valid selections table and are replaced by the
faster 150 ns TAA offering.
3. The 28C16 ceramic package offerings have been removed. New designs should utilize the 28C256 ceramic offerings.
Valid Part Numbers
The following table lists standard Atmel products that can be ordered.
Device Numbers
AT28C16
Speed
Package and Temperature Combinations
15
15
-
JC, JI, PC, PI, SC, SI
JC, JI, PC, PI, SC, SI
W
AT28C16E
AT28C16
Die Products
Reference Section: Parallel EEPROM Die Products
Package Type
32J
24P6
24S
W
32 Lead, Plastic J-Leaded Chip Carrier (PLCC)
24 Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP)
24 Lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
Die
Options
Blank
E
Standard Device: Endurance = 10K Write Cycles; Write Time = 1 ms
High Endurance Option: Endurance = 100K Write Cycles; Write Time = 200 µs
9
Packaging Information
32J, 32-Lead, Plastic J-Leaded Chip Carrier (PLCC)
24P6, 24-Lead, 0.600” Wide, Plastic Dual Inline
Dimensions in Inches and (Millimeters)
JEDEC STANDARD MS-018 AA
Package (PDIP)
Dimensions in Inches and (Millimeters)
JEDEC STANDARD MS-011 AA
.025(.635) X 30° - 45°
1.27(32.3)
1.24(31.5)
.045(1.14) X 45° PIN NO. 1
.012(.305)
PIN
1
IDENTIFY
.008(.203)
.530(13.5)
.553(14.0)
.490(12.4)
.566(14.4)
.530(13.5)
.547(13.9)
.032(.813)
.026(.660)
.021(.533)
.013(.330)
.595(15.1)
.585(14.9)
.090(2.29)
MAX
1.100(27.94) REF
.030(.762)
.015(3.81)
.095(2.41)
.060(1.52)
.140(3.56)
.120(3.05)
.050(1.27) TYP
.220(5.59)
MAX
.005(.127)
MIN
.300(7.62) REF
.430(10.9)
.390(9.90)
AT CONTACT
POINTS
SEATING
PLANE
.065(1.65)
.015(.381)
.022(.559)
.014(.356)
.161(4.09)
.125(3.18)
.065(1.65)
.041(1.04)
.110(2.79)
.090(2.29)
.022(.559) X 45° MAX (3X)
.630(16.0)
.590(15.0)
.453(11.5)
.447(11.4)
0
15
REF
.012(.305)
.008(.203)
.495(12.6)
.485(12.3)
.690(17.5)
.610(15.5)
24S, 24-Lead, 0.300” Wide, Plastic Gull Wing Small
Outline (SOIC)
Dimensions in Inches and (Millimeters)
.020(.508)
.013(.330)
.299(7.60) .420(10.7)
.291(7.39) .393(9.98)
PIN 1 ID
.050(1.27) BSC
.616(15.6)
.105(2.67)
.598(15.2)
.092(2.34)
.012(.305)
.003(.076)
.013(.330)
.009(.229)
.050(1.27)
0
REF
.015(.381)
8
AT28C16
10
AT28C16
11
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