VLB70-12F [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | VLB70-12F |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VLB70-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .380 4L FLG
The ASI VLB70-12F is Designed for
.112 x 45°
B
A
Ø.125 NOM.
FULL R
FEATURES:
·
J
.125
·
· Omnigold™ Metalization System
C
D
E
F
I
MAXIMUM RATINGS
H
G
IC
12 A
36 V
MINIMUM
inches / mm
MAXIMUM
inches / mm
VCBO
VCEO
VEBO
PDISS
TJ
DIM
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
A
B
C
D
E
F
G
H
I
18 V
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
3.5 V
183 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.05 OC/W
.004 / 0.10
.085 / 2.16
.160 / 4.06
.240 / 6.10
J
TSTG
qJC
ORDER CODE: ASI10737
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 100 mA
IC = 50 mA
IE = 10 mA
VCE = 15 V
VCE = 5.0 V
36
36
18
3.5
V
BVCES
BVCEO
BVEBO
ICES
V
V
V
10
---
mA
---
hFE
IC = 5.0 A
10
COB
VCB = 12.5 V
MHz
f = 1.0
270
pF
10
GP
dB
%
VCE = 12.5 V
POUT = 70 W
f = 50 MHz
60
hC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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