HVV1011-600 [ASI]

Silicon MOSFET Technology;

HVV1011-600


型号：	HVV1011-600
厂家：	ADVANCED SEMICONDUCTOR
描述：	Silicon MOSFET Technology
文件：	总9页 (文件大小：1286K)
下载：	下载PDF数据表文档文件

HVV1011-600-EK

Silicon MOSFET Technology

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1 ASI

HVV1012-060

L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Apllications

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37 HVVI

HVV1012-100

L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Applications

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42 HVVI

HVV1012-250

L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications

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41 HVVI

HVV1012-250-EK

L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications

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16 HVVI

HVV1012-550

Excellent Thermal Stability

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1 ASI

HVV1012-550-EK

Excellent Thermal Stability

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1 ASI

HVV1214-025

L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications

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42 HVVI

HVV1214-025S

L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty

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18 HVVI

HVV1214-075

L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications

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31 HVVI

HVV1214-100

L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications

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26 HVVI

HVV1214-100-EK

L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications

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27 HVVI

HVV1214-140

All Gold Bonding Scheme

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1 ASI

HVV1214-140-EK

All Gold Bonding Scheme

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1 ASI

HVW

Metal Alloy Resistors, Special Purpose, High Voltage

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20 VISHAY

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