ASIMV1863D [ASI]
SILICON ABRUPT TUNING VARACTOR DIODE; 突发性硅调谐变容二极管
| 型号： | ASIMV1863D |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | SILICON ABRUPT TUNING VARACTOR DIODE |
| 文件： | 总1页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MV1863D
SILICON ABRUPT TUNING VARACTOR DIODE
DESCRIPTION:
PACKAGE STYLE 31
The ASI MV1863D is a Passivated
Epitaxial Silicon Abrupt Tuning
Varactor Diode.
MAXIMUM RATINGS
I
100 mA
V
60 V
PDISS
TJ
500 mW @ TC = 25 OC
-65 OC to +175 OC
-65 OC to +200 OC
0.3 OC/W
TSTG
θJC
CHARACTERISTICS TC = 25 O
C
NONE
SYMBOL
VB
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IR = 10 µA
VR = 55 V
60
V
IR
CT
TR
RS
Q
100
5.17
3.3
µA
VR = 4.0 V
C = -4/C = -60
VR = 4.0 V
VR = 4.0 V
f = 1.0 MHz
f = 1.0 MHz
f = 500 MHz
f = 100 MHz
f = 1.0 MHz
4.23
2.6
4.70
pF
RATIO
Ohms
---
1.1
300
Cp
Ls
0.18
0.8
pF
µH
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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