ASICD2315 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASICD2315 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CD2315
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .380 4L FLG
The ASI CD2315 is designed for
broadband amplifier applications in
commercial and amateur
.112 x 45°
B
A
Ø.125 NOM.
FULL R
2
1
communication equipment.
J
.125
3
2
FEATURES:
C
E
D
F
• PG = 18 dB min. at 75 W/30 MHz
• IMD3 = -30 dBc max. at 75 W (PEP)
• Omnigold™ Metalization System
I
H
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
A
B
C
D
E
F
G
H
I
MAXIMUM RATINGS
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
IC
VCB
VCE
PDISS
TJ
10 A
60 V
.004 / 0.10
.085 / 2.16
.160 / 4.06
35 V
140 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.05 °C/W
.240 / 6.10
J
1 = Collector 2 = Emitter 3 = Base
TSTG
θJC
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 50 mA
IE = 10 mA
VE = 28 V
35
V
BVCER
BVEBO
ICES
RBE = 10 Ω
60
V
4.0
V
5
mA
---
hFE
V
V
V
CE = 5.0 V
CB = 28 V
CE = 25 V
IC = 1.0 A
10
100
Cob
f = 1.0 MHz
80
pF
ICQ = 3.2 A
f = 225 MHz
Snd. = -7 dB
GPE
13.5
14.5
dB
PREF = 16 W
Vision = -8 dB
IMD3
-55
dBc
Side Band = -16 dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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