ASI10588 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASI10588 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMB150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI FMB150 is Designed for
PACKAGE STYLE .500 4L FLG
FEATURES:
.112x45°
L
A
·
Ø.125 NOM.
FULL R
C
·
· Omnigold™ Metalization System
B
E
D
F
MAXIMUM RATINGS
G
H
K
J
IC
16 A
60 V
I
VCBO
VCEO
VCES
VEBO
PDISS
TJ
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.220 / 5.59
.230 / 5.84
A
B
C
D
E
F
G
H
I
25 V
.125 / 3.18
.125 / 3.18
.245 / 6.22
.255 / 6.48
60 V
.720 / 18.28
.7.30 / 18.54
4.0 V
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
230 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.1 OC/W
J
K
L
.980 / 24.89
TSTG
qJC
ORDER CODE: ASI10588
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 100 mA
IC = 100 mA
IC = 100 mA
IE = 20 mA
VCE = 5.0 V
60
55
25
4.0
20
V
BVCER
BVCEO
BVEBO
hFE
RBE = 10 W
V
V
V
IC = 1.0 A
150
140
---
COB
VCB = 28 V
VCC = 28 V
f = 1.0 MHz
f = 108 MHz
pF
9.0
PG
dB
%
POUT = 150 W
65
hC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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