AHV9001 [ASI]
SILICON HYPERABRUPT VARACTOR DIODE; 硅超突变变容二极管
| 型号： | AHV9001 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | SILICON HYPERABRUPT VARACTOR DIODE |
| 文件： | 总1页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AHV9001
SILICON HYPERABRUPT VARACTOR DIODE
PACKAGE STYLE 51
DESCRIPTION:
The ASI AHV9001 is a Silicon
HyperabruptTuning Varactor Diode for
VHF operation.
FEATURES INCLUDE:
• Octave tunning from 4 to 20 V
• Ultra high Q
• Linnear frequency performance
versus voltage
MAXIMUM RATINGS
50 mA
22 V
IF
VR
280 mW @ TC = 25 °C
-55 °C to +125 °C
-55 °C to +125 °C
PDISS
TJ
TSTG
CHARACTERISTICS TA = 25 °C
NONE
SYMBOL
VBR
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
V
22
IR = 10 µA
VR = 20 V
VR = 4.0 V
VR = 8.0 V
VR = 20 V
0.10
IR
µA
pF
pF
pF
---
f = 1.0 MHz
f = 1.0 MHz
f = 1.0 MHz
18
7.5
3.1
5.4
220
20
8.5
3.5
6.0
22
10.5
3.9
Ct
Ct
Ct
6.6
CT4/CT20
Q
f = 1.0 MHz
f = 1.0 MHz
VR = 1.0 V
---
Notes:
1. DO-7 glass package for HF, VHF and UHF hyperabrupts.
2. Style 51 ceramic package for MICROWAVE Hyperabrupts.
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
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