2SC2585 [ASI]
NPN SILICON RF TRANSISTOR; NPN硅晶体管RF
| 型号： | 2SC2585 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF TRANSISTOR |
| 文件： | 总1页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2585
NPN SILICON RF TRANSISTOR
PACKAGE STYLE
DESCRIPTION:
The 2SC2585 is a Common Emitter
Device Designed for Low Niose
Amplifier and Medium Power Oscillator
Applications up to 8.5 GHz.
MAXIMUM RATINGS
65 mA
12 V
IC
VCEO
VCBO
VEB
PT
25 V
1.5 V
400 mW @ TC = 166 OC
-65 OC to +200 OC
-65 OC to +200 OC
85 OC/W
TJ
TSTG
θJC
DIMENSIONS IN MILLIMETERS
1 = BASE 3 = COLLECTOR
2 & 4 = EMITTER
CHARACTERISTICS TC = 25 O
C
SYMBOL
ICBO
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
VCB = 8.0 V
VEB = 1.0 V
VCE = 8.0 V
100
100
250
µA
µA
---
IEBO
hFE
IC = 7.0 mA
IC = 20 mA
50
115
ft
VCE = 8.0 V
VCB = 10 V
f = 1.0 GHz
f = 1.0 MHz
8.5
0.2
GHz
pF
Ccb
0.6
VCE = 8.0 V
IC = 20 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
18.0
11.0
6.5
|S21E|2
dB
10.0
GNF
MAG
VCE = 8.0 V
VCE = 8.0 V
IC = 7.0 mA
IC = 10 mA
f = 2.0 GHz
11.0
dB
dB
f = 2.0 GHz
f = 4.0 GHz
15.0
10.0
NF
VCE = 8.0 V
IC = 7.0 mA
f = 2.0 GHz
2.0
2.5
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
相关型号：
2SC2586
RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
NEC
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