1N23DM [ASI]
Mixer Diode, X Band, 450ohm Z(V) Max, 7.8dB Noise Figure, Silicon, DO-22, HERMETIC SEALED, DO-22, 1 PIN;
| 型号： | 1N23DM |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | Mixer Diode, X Band, 450ohm Z(V) Max, 7.8dB Noise Figure, Silicon, DO-22, HERMETIC SEALED, DO-22, 1 PIN 微波混频二极管 |
| 文件： | 总1页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N23ER
SILICON MIXER DIODE
PACKAGE STYLE DO- 23R
DESCRIPTION:
The ASI 1N23ER is a Silicon Mixer
Diode Designed for Applications
Operating From 8.0 to 12.4 GHz.
FEATURES:
• High burnout resistance
• Low noise figure
• Hermetically sealed package
MAXIMUM RATINGS
IF
VR
20 mA
1.0 V
PDISS
TJ
5.0 (ERGS) @ TC = 25 °C
-55 °C to +150 °C
-55 °C to +150 °C
TSTG
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIM
UNITS
dB
F = 9375 MHz
RL = 100 Ω
Plo = 1.0 mW
IF = 30 MHz
NFif = 1.5 dB
f = 1000 Hz
N
F
7.5
VSWR
ZIF
1.3
RL = 22 Ω
335
8.0
465
Ω
frange
12.4
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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