SFF802 [ASEMI]
SUPER-FAST RECOVERY RECTIFIERS; 超快恢复二极管
| 型号： | SFF802 |
| 厂家： | 
ASEMI |
| 描述： | SUPER-FAST RECOVERY RECTIFIERS |
| 文件： | 总5页 (文件大小：783K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF802A THUR SFF806A
SUPER-FAST RECOVERY RECTIFIERS
REV:1.01
◆ Ultrafast 35 Nanosecond Recovery Time
◆ 175°C Operating Junction Temperature
◆ Popular ITO-220AC Package
Typical
Reference Data
VRRM= 200V
IF(AV)= 8A
◆ Epoxy Meets UL94 ,V0 @ 1/8"
◆ High Temperature Glass Passivated Junction
◆ Low Forward Voltage
VRRM= 400V
IF(AV)= 8A
◆ Low Leakage Current
◆ Reverse Voltage to 600 Volts
◆ Pb−Free Packages are Available
VRRM= 600V
IF(AV)=8A
● Case: Epoxy, Molded
● Weight: 1.9 grams (approximately)
● Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
● Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
● Shipped 50 units per plastic tube
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol SFF802A SFF804A SFF806A Unit
VRRM
VRWM
VR
200
400
600
V
Average Rectified Forward Current
Total Device, (Rated VR), TC = 150℃
Peak Repetitive Forward Current
IF(AV)
IFM
8
A
A
16
(Rated VR, Square Wave, 20 kHz), TC = 150℃
Nonrepetitive Peak Surge Current (Surge applied at
rated load conditions halfwave , single phase, 60 Hz
IFSM
100
A
– 40 to +175
Operating Junction Temperature and Storage TemperaturTJ, Tstg
℃
THERMAL CHARACTERISTICS（Per Diode Leg)
Maximum Thermal Resistance, Junction to Case
2.0
RθJC
3.0
℃/W
ELECTRICAL CHARACTERISTICS(Per Diode Leg)
Maximum Instantaneous Forward Voltage (1)
VF
IR
V
(IF = 8.0 Amps, TC = 25°C)
1.05
1.35
1.5
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 150°C)
(Rated dc Voltage, TJ = 25°C)
Maximum Reverse Recovery Time
800
10
800
10
800
10
μA
ns
Trr
35
(IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A)
(1) Pulse Test: Pulse Width = 300μs, Duty Cycle≤ 2.0%.
www.asemi.tw
Page1
SFF802A
Figure 2.Typical Reverse Current
Figure 1.Typical Forward Voltage
Figure 3.Current Derating, Case
Figure 5.Power Dissipation
Figure 4.Current Derating,Am bient
www.asemi.tw
Page2
SFF804A
Figure 2.Typical Reverse Current
Figure 1.Typical Forward Voltage
Figure 3.Current Derating, Case
Figure 5.Power Dissipation
Figure 4.Current Derating,Am bient
www.asemi.tw
Page3
SFF806A
Figure 2.Typical Reverse Current
Figure 3.Current Derating, Case
Figure 1.Typical Forward Voltage
Figure 5.Power Dissipation
Figure 4.Current Derating,Am bient
www.asemi.tw
Page4
SFF802A THUR SFF806A
SUPER-FAST RECOVERY RECTIFIERS
REV:1.01
ITO-220AC
www.asemi.tw
Page5
相关型号：
SFF80N20MDB
Power Field-Effect Transistor, 55A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN
SSDI
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