MBR3045/3P [ASEMI]

Dual High-Voltage Schottky Rectifiers; 双高压肖特基整流器
MBR3045/3P
型号: MBR3045/3P
厂家: ASEMI    ASEMI
描述:

Dual High-Voltage Schottky Rectifiers
双高压肖特基整流器

高压
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中文:  中文翻译
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MBR3040 THUR MBR3050  
Dual High-Voltage Schottky Rectifiers  
REV:1.08  
◆ Half Bridge Rectified、Common Cathode Structure.  
◆ Multilayer Metal -Silicon Potential Structure.  
◆ Low Power Waste,High Efficiency.  
Typical Reference  
Data  
VRRM= 40V  
IF(AV)= 30A  
◆ Beautiful High Temperature Character.  
◆ Have Over Voltage protect loop,high reliability.  
◆ RoHs Product.  
VRRM= 45V  
IF(AV)= 30A  
● Low Voltage High Frequency Switching Power Supply.  
● Low Voltage High Frequency Invers Circuit.  
VRRM= 50V  
IF(AV)= 30A  
● Low Voltage Continued Circuit and Protection Circuit.  
■ MBR3040、MBR3045、MBR3050 Schottky diode,in the  
manufacture uses the main process technology includes:  
Silicon epitaxial substrate, P+ loop technology,The  
potential metal and the silicon alloy technology, the  
device uses the two chip, the common cathode, the plastic  
half package structure.  
Polarity  
Absolute Maximum Ratings  
MBR3050  
50  
Item  
Symbol MBR3040 MBR3045  
Unit  
V
Maximal Inverted Repetitive Peak Voltage  
Maximal DC Interdiction Voltage  
VRRM  
VDC  
40  
40  
45  
45  
50  
V
Average Rectified Forward Current TC=150℃  
Whole Device  
30  
15  
IFAV  
A
Unilateral  
Forward Peak Surge Current(Rated Load 8.3 Half  
Mssine Wave-According to JEDEC Method)  
150  
IFSM  
A
Operating Junction Temperature  
Storage Temperature  
-40- +175  
-40- +175  
TJ  
TSTG  
Maximum Thermal Resistance JunctiontoCase  
RθJC  
2.0  
℃/W  
Electricity Character  
Representat  
ive  
Test Condition  
Item  
Minimum  
MBR3040 MBR3045 MBR3050 Unit  
500  
10  
TJ =25℃  
uA  
mA  
V
IR  
VF  
VR=VRRM  
IF=15A  
TJ =125℃  
TJ =25℃  
0.68  
0.72  
0.70  
www.asemi.tw  
Page1  
MBR3040 THUR MBR3050  
Dual High-Voltage Schottky Rectifiers  
REV:1.08  
The forward voltage and forward current curve  
The reverse leak current and the reverse  
voltage (single-device) curve  
nt  
Current Derating Curve, Per Eleme  
The crunode capacitance curve  
www.asemi.tw  
Page2  
MBR3040 THUR MBR3050  
Dual High-Voltage Schottky Rectifiers  
REV:1.08  
TO-247/3P AB  
5±0.15  
杆孔深0.15±0.15  
15.75  
2±0.10  
C
D
E
F
B1  
B2  
G
2.4±0.20  
A
2±0.20  
3±0.20  
0.6±0.10  
5.45  
1.2±0.20  
注意事项:  
1.XXXX代表日期码,第一码表示公元年的最后一码,第二码表示生产时当月码  
(A,B,C.为一月,二月,三月),第三,四码表示大量生产时批次码。  
例如:2009年第一月生产的,D/C为9AXX。  
MBR3045  
2.包装及出货:ROHS,30PCS/管,0.36K/BOX,1.8K(1.8K BOXEX)/CARTON,  
BOXEX及CARTON。  
XXXX  
修订内容  
www.asemi.tw  
Page3  

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