KBU610 [ASEMI]
6.0A Single-Phase Silicon Bridge Rectifier; 6.0A单相硅桥式整流器
| 型号： | KBU610 |
| 厂家： | 
ASEMI |
| 描述： | 6.0A Single-Phase Silicon Bridge Rectifier |
| 文件： | 总2页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KBU6005 thru KBU610
6.0 A Single-Phase Silicon Bridge Rectifier
Rectifier Reverse Voltage 50 to 1000V
+
6.8 0.2
+
23.2 0.5
+
3.85 0.25
+
4.4 0.2
+
1.95 0.25
Features
+
17.3 0.5
Ideal for P.C. Board mounting
19.3
High surge current capability
MAX.
1.9 R. TYP.
(2PLACES)
This series is UL listed under the Recognized
Component Index, file number E142814
The plastic material used carries Underwriters
Laboratory flammability recognition 94V-0
High temperature soldering guaranteed 265 C /10
seconds at 5 lbs (2.3kg) tension
+
_
10.8 0.5
~
+
~
+
4.9 0.2
25.4
MIN.
Mechanical Data
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-202,
Method 208
Polarity: Polarity symbols molded on body
+
5.1 0.5
+
5.6 0.5
Mounting Position:: Any
+ 0
0.1
1.3
Mounting Torque: 5 in-lbs max.
Weight: 0.3 ounce, 8.0 grams (approx)
Dimensions in millimeters =0.0394")
Maximum Ratings & Thermal Characteristics
Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.
For Capacitive load derate current by 20%.
KBU
6005
KBU
601
KBU
602
KBU KBU KBU
KBU
610
Parameter
Symbol
VRRM
VRMS
VDC
unit
604
400
606
600
608
800
V
Maximum repetitive peak reverse voltage
Maximum RMS bridge input voltage
Maximum DC blocking voltage
50
35
50
100
200
140
200
1000
70
280
400
420
600
560
800
700
V
V
100
1000
Maximum average forward rectified
output current at TA=100 C
6.0
IF(AV)
A
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
250
A
IFSM
I2 t
2sec
A
300
2.7
Rating for fusing ( t<8.3ms)
C / W
Typical thermal resistance per element(1)
ReJA
TJ,
TSTG
Operating junction and storage temperature
range
-55 to + 150
Electrical Characteristics
Rating at 25 C ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.
For Capacitive load derate by 20 %.
KBU
602
KBU
604
KBU
608
KBU
601
KBU
6005
KBU
606
KBU
610
Parameter
Symbol
Unit
Maximum instantaneous forward voltage drop
per leg at 6.0A
1.1
VF
V
A
10
500
Maximum DC reverse current at rated TA =25 C
IR
DC blocking voltage per element
TA =125 C
Notes: (1)Thermal resistance from Junction to Ambemton P.C.board mounting.
www.asemi.tw
.
Rating and Characteristic Curves ( TA= 25oC Unless otherwise noted )
KBU6005 thru KBU610
Fig. 2 Maximum Non-repetitive Peak
Fig. 1 Derating Curve for
Output Rectified Current
Forward Surge Current
6.0
250
8.3ms
Single half-sine-Wave
[JEDEC Method]
200
150
4.0
100
50
2.0
0
60Hz Resistive of
Inductive Load
1
10
100
Number of Cycles at 60HZ
0
50
100
150
o
Case Temperature, C
Fig. 4 Typical Reverse
Characteristics
10
1.0
0.1
.01
Fig. 3 Typical Instantaneous
Forward Characteristics
Tc= 100 C
100
40
20
10
TA= 25 C
4.0
1.0
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse
Voltage, %
0.1
.01
Tj= 25 C
Pulse Width= 300us
2% duty cycle
Fig. 5 Typical Junction Capacitance
400
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Instantaneous Forward
Voltage, Volts
100
Tj= 25 C
f= 1.0MHz
V
= 50mV p.p.
ing
10
1
1.5
2
10
100
Reverse Voltage, Volts
.
www.asemi.tw
相关型号：
KBU610-LF
Bridge Rectifier Diode, 1 Phase, 6A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBU, 4 PIN
WTE
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