DB106S [ASEMI]
1.0 A Single-Phase Glass Passivated Bridge Rectifiers; 1.0单相玻璃钝化整流桥
| 型号： | DB106S |
| 厂家： | 
ASEMI |
| 描述： | 1.0 A Single-Phase Glass Passivated Bridge Rectifiers |
| 文件： | 总2页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DB101S thru DB107S
1.0 A Single-Phase Glass Passivated Bridge Rectifiers
Rectifier Reverse Voltage 50 to 1000V
DB-S
_
Features
+
+
6.35 0.15
This series is UL listed under the Recognized
Component Index, file number E142814
+
7.65 0.25
~ ~
The plastic material used carries Underwriters Laboratory
flammability recognition 94V-0
Surge overload ratings to 50 amperes
Ideal for printed circuit board application
High temperature soldering guaranteed 265 C /10
seconds at 5 lbs (2.3kg) tension
+
8.32 0.19
+
0.15
2.35
Mechanical Data
+
0.2 0.15
+
1.01 0.13
Case: Molded plastic
+
1.28 0.15
Terminals: Plated leads solderable per MIL-STD-202,
Method 208
+
5.1 0.1
10.4 Max.
Polarity: Marked on body
Mounting Position: Any
Weight: 0.04 ounce, 1.0 grams (approx)
Dimensions in millimeters ( 1mm =0.0394" )
Maximum Ratings & Thermal Characteristics
Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.
For Capacitive load derate current by 20%.
DB101S DB102S DB103S DB104S DB105S DB106S DB107S
Parameter
Symbol
VRRM
VRMS
VDC
unit
V
Maximum repetitive peak reverse voltage
Maximum RMS bridge input voltage
Maximum DC blocking voltage
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
100
1000
Maximum average forward rectified
output current at TA=40 C
IF(AV)
1.0
A
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
50
A
IFSM
2
2
I t
sec
A
Rating for fusing ( t<8.3ms)
10
110
25.0
C / W
pF
Typical thermal resistance per element (1)
Typical junction capacitance per element (2)
ReJA
Cj
TJ,
Operating junction and storage temperature
range
C
-55 to + 150
TSTG
Electrical Characteristics
Rating at 25 C ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.
For Capacitive load derate by 20 %.
DB101S DB102S DB103S DB104S DB105S DB106S DB107S
Parameter
Symbol
Unit
Maximum instantaneous forward voltage drop
per leg at 1.0A
1.1
VF
V
10
Maximum DC reverse current at rated TA =25 C
A
IR
500
DC blocking voltage per element
TA =125 C
Notes: (1)Thermal resistance from Junction to Ambemt on P.C.board mounting.
(2)Measured at 2.0MHz and applied reverse voltage of 4.0 volts.
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Rating and Characteristic Curves( TA=25 C Unless otherwise noted )
DB101S thru DB107S
Fig. 2 Maximum Non-repetitive Peak
Fig. 1 Derating Curve for
Output Rectified Current
Forward Surge Current
1.0
60
60Hz Resistive of
Inductive Load
8.3ms
50
Single half-sine-Wave
[JEDEC Method]
40
30
20
0.5
10
0
1
10
100
Number of Cycles at 60HZ
Fig. 4 Typical Revers Characteristics
100
0
40
60
80
100
120
140
Tj=125 C
10
1.0
0.1
Case Temperature, C
Fig. 3 Typical Instantaneous
Forward Characteristics
Tj=25 C
.01
10
0
20
40
60
80
100 120
140
Tj=25 C
Percent of Rated Peak Reverse
Voltage, %
Pulse Width=300us
2% duty cycle
1.0
0.1
.01
Fig. 5 Typical Junction Capacitance
100
Tj=25 C
f=1.0MHz
Vsig =50mV p.p.
10
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward
Voltage, Volts
1
1.5
2
10
100
Reverse Voltage, Volts
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相关型号：
DB106S-T
Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-S, 4 PIN
RECTRON
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