AON7611 [AOS]
30V Complementary MOSFET; 30V互补MOSFET
| 型号： | AON7611 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V Complementary MOSFET |
| 文件： | 总11页 (文件大小：426K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON7611
30V Complementary MOSFET
General Description
Product Summary
N-channel
P-channel
The AON7611 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs may be used in inverter and
other applications.
VDS (V) = 30V
ID = 9.0A
VDS (V) = -30V
ID = -18.5A
(VGS = ±10V)
(VGS = ±10V)
(VGS = ±4.5V)
RDS(ON) < 50mΩ
RDS(ON) < 70mΩ
RDS(ON) < 38mΩ
RDS(ON) < 62mΩ
100% UIS Tested
100% Rg Tested
D1
D2
DFN 3x3 EP
Top View
Bottom View
Top View
D2
D2
D1
S2
G2
S1
G1
G1
G2
D1
Pin 1
S2
S1
P-channel
N-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Max N-channel
Max P-channel
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
9
-30
±20
-18.5
-11.5
-35
V
V
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current C
ID
TA=100°C
5.5
20
4
A
IDM
TA=25°C
TA=70°C
-5
Continuous Drain
Current A
IDSM
3
-4
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IAR
7
-17
14
A
mJ
EAR
2
7
TA=25°C
20.8
8.3
PD
W
Power Dissipation B
TA=100°C
2.8
TA=25°C
1.5
1.5
PDSM
W
°C
Power Dissipation A
0.9
0.9
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
-55 to 150
Thermal Characteristics: N-channel
Parameter
Symbol
Typ
40
Max
50
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case B
t
≤ 10s
RθJA
Steady-State
Steady-State
70
85
RθJC
15
18
Thermal Characteristics: P-channel
Parameter
Symbol
Typ
40
70
5
Max
50
85
6
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t
≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case B
Steady-State
Steady-State
RθJC
Rev 1: Dec 2011
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Page 1 of 11
AON7611
N-channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=4A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.5
nA
V
VGS(th)
ID(ON)
1.5
20
2
A
40
64
50
80
70
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=3A
53
mΩ
S
VDS=5V, ID=4A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
11
IS=1A,VGS=0V
0.79
1
V
Maximum Body-Diode Continuous Current
9.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
170
35
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
23
VGS=0V, VDS=0V, f=1MHz
1.7
3.5
5.3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.05
2
10
6
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=4A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
0.55
1
4.5
1.5
18.5
15.5
VGS=10V, VDS=15V, RL=3.75Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=4A, dI/dt=100A/µs
IF=4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
7.5
2.5
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Dec 2011
www.aosmd.com
Page 2 of 11
AON7611
N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10
5
10
8
10V
VDS=5V
4V
4.5V
6
3.5V
4
125°C
25°C
2
VGS=3V
0
0
1
2
3
4
5
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
80
60
40
20
0
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=4A
VGS=4.5V
VGS=4.5V
VGS=10V
ID=3A
0.8
0
25
50
75
100
125
150
175
0
2
4
6
8
10
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
120
100
80
60
40
20
0
1.0E+01
ID=4A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Dec 2011
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Page 3 of 11
AON7611
N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
300
250
200
150
100
50
VDS=15V
ID=4A
8
Ciss
6
4
Coss
2
Crss
0
0
0
1
2
3
4
5
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
100
10
TC=25°C
10µs
RDS(ON)
limited
100µs
1
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.01
40
0
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=18°C/W
1
0.1
PD
Single Pulse
0.001
Ton
T
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Dec 2011
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Page 4 of 11
AON7611
N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
10
8
6
6
4
4
2
2
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
TCASE (°C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
TA=25°C
1
0.00001
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=85°C/W
0.1
PD
Single Pulse
0.001
0.01
Ton
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: Dec 2011
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Page 5 of 11
AON7611
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
IF
Isd
Vgs
dI/dt
IRM
+
Vdd
VDC
Vdd
-
Vds
Rev 1: Dec 2011
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Page 6 of 11
AON7611
P-channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
ID=-250 A, VGS=0V
Min
Typ
Max Units
STATIC PARAMETERS
µ
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µ
A
TJ=55°C
-5
VDS=0V, VGS=±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-2.4
nA
V
VGS(th)
ID(ON)
VDS=VGS, ID=-250µA
-1.4
-35
-1.9
VGS=-10V, VDS=-5V
VGS=-10V, ID=-5A
A
30
45
38
57
62
m
Ω
Ω
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-4A
46
m
V
DS=-5V, ID=-5A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
10
S
IS=-1A,VGS=0V
-0.76
-1
V
A
Maximum Body-Diode Continuous Current
-20
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
520
100
65
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-5A
VGS=-10V, VDS=-15V, RL=3.0
3.5
7.5
11.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9.2
4.6
1.6
2.2
7.5
5.5
19
20
10
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Ω
,
ns
RGEN=3
Ω
tD(off)
tf
ns
7
ns
trr
IF=-5A, dI/dt=100A/
IF=-5A, dI/dt=100A/
µ
µ
s
s
11
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
5.3
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Dec 2011
www.aosmd.com
Page 7 of 11
AON7611
P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
-10V
-8V
-5V
VDS=-5V
25
20
15
10
5
25
20
15
10
5
-4.5V
-4V
125°C
25°C
VGS=-3.5V
0
0
1
2
3
4
5
6
0
1
2
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
100
80
60
40
20
0
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-5A
VGS=-4.5V
=-4.5V
VGS
ID=-4A
VGS=-10V
0.8
0
25
50
75
100
125
150
175
0
2
4
6
8
10
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
120
100
80
60
40
20
0
1.0E+02
1.0E+01
ID=-5A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Dec 2011
www.aosmd.com
Page 8 of 11
AON7611
P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
700
600
500
400
300
200
100
0
VDS=-15V
ID=-5A
8
Ciss
6
4
Coss
2
Crss
0
0
2
4
6
8
10
0
5
10
15
20
25
30
Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
150
100
50
100.0
10.0
1.0
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
0.0
0
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=6.0°C/W
0.1
0.01
PD
Single Pulse
0.001
Ton
T
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Dec 2011
www.aosmd.com
Page 9 of 11
AON7611
P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
20
16
12
8
4
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TCASE (°C)
TCASE (°C)
Figure 12: Power De-rating (Note F)
Figure 13: Current De-rating (Note F)
10000
1000
100
10
TA=25°C
1
0.00001
0.001
0.1
Pulse Width (s)
10
1000
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=85°C/W
0.1
Single Pulse
PD
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: Dec 2011
www.aosmd.com
Page 10 of 11
AON7611
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
R esistive Sw itching Test C ircuit & W aveform s
R L
V ds
to ff
to n
t
f
td(o ff)
td(o n)
t
r
Vgs
-
90%
10%
D U T
V dd
Vgs
V DC
+
R g
V gs
V ds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
DSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Ig
Rev 1: Dec 2011
www.aosmd.com
Page 11 of 11
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