AOD458 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD458 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD458
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD458 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product AOD458 is Pb-free (meets ROHS & Sony
259 specifications). AOD458L is a Green Product
ordering option. AOD458 and AOD458L are
electrically identical.
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 4mΩ (VGS = 10V)
RDS(ON) < 5mΩ (VGS = 4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±12
85
V
A
TC=25°CG
TC=100°C
Continuous Drain
Current
ID
60
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
IDM
IAR
EAR
200
45
A
330
50
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
25
TA=25°C
2.7
PDSM
W
Power Dissipation A
TA=70°C
1.9
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
20
55
3
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
44
Steady-State
Steady-State
RθJC
1.8
Alpha & Omega Semiconductor, Ltd.
AOD458
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
VDS=24V, VGS=0V
30
V
0.002
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
100
3
nA
V
VGS(th)
ID(ON)
1
1.7
100
A
VGS=10V, ID=20A
3.2
5
4
6
5
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
V
GS=4.5V, ID=20A
DS=5V, ID=20A
3.8
107
0.72
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
S
V
A
IS=1A, VGS=0V
1
Maximum Body-Diode Continuous Current
50
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
5750
640
370
0.4
7500
1
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V)
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
41
18
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
VGS=4.5V, VDS=15V, ID=20A
10
13.5
14
19
20
80
19
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
tD(off)
tf
58
13.5
39
trr
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
55
ns
Qrr
39
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0:Nov 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
VDS=5V
4.5V
3.0V
125°C
25°C
VGS=2.5V
0
1
2
3
4
5
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
5
4
3
2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS=4.5V
VGS=10V, 20A
VGS=10V
VGS=4.5V, 20A
0
10
20
30
40
50
60
75
0
25
50
100
125
150
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Figure 4: On-Resistance vs. Junction Temperature
12
100
10
1
10
8
ID=20A
125°C
0.1
125°C
0.01
25°C
6
0.001
0.0001
0.00001
4
25°C
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
8
9
10
V
SD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
5
4
3
2
1
0
VDS=15V
ID=20A
Ciss
Coss
Crss
0
10
20
30
40
50
0
5
10
15
20
25
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: CapacitanceCharacteristics
1000
100
10
200
160
120
80
TJ(Max)=175°C, TC=25°C
10µs
TJ(Max)=175°C
TC=25°C
100µs
DC
1ms
RDS(ON)
limited
1
40
0
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOD458
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
TA=25°C
0.0001
0.001
0
25
50
75
100
CASE (°C)
125
150
175
T
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
Figure 13: Power De-rating (Note B)
50
100
80
60
40
20
0
TA=25°C
Tj=150°C
40
30
20
10
0
0.01
0.1
1
10
100
1000
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
T
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
1
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.001
0.00001
0.0001
0.01
0.1
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
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