MSK4304HEU [ANAREN]

10 AMP, 100 VOLT RAD HARD MOSFET POWER 3-PHASE MOTOR DRIVE HYBRID;
MSK4304HEU
型号: MSK4304HEU
厂家: ANAREN MICROWAVE    ANAREN MICROWAVE
描述:

10 AMP, 100 VOLT RAD HARD MOSFET POWER 3-PHASE MOTOR DRIVE HYBRID

电动机控制
文件: 总7页 (文件大小:153K)
中文:  中文翻译
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MIL-PRF-38534 AND 38535 CERTIFIED FACILITY  
10 AMP, 100 VOLT  
RAD HARD MOSFET  
POWER 3-PHASE  
MOTOR DRIVE HYBRID  
4304RH  
M.S.KENNEDY CORP.  
FEATURES:  
100V, 10 Amp Capability  
Ultra Low Thermal Resistance - Junction to Case - 2.5°C/W (Each MOSFET)  
Self-Contained, Lowside/Highside Drive Circuitry  
Bootstrap High-Side Supplies  
Under-Voltage Lockout  
Capable of Switching Frequencies to 25KHz  
Isolated Case Allows Direct Heat Sinking  
Bolt-down Design Allows Superior Heat Dissipation  
Total Dose Hardened to 300 Krads(Si) (Method 1019.7 Condition A)  
DESCRIPTION:  
The MSK4304RH is a radiation hardened 10 Amp, 3 Phase Bridge Power Motor Drive Hybrid with a 100 volt maximum  
rating on the output switches. The internal components have been selected to provide total dose tolerance for military and  
space applications. The output switches are MOSFETs. This new power motor drive hybrid is 5.0 volt input logic compat-  
ible. Under-voltage lockout prevents the bridge from starting before the supply voltage rises high enough for complete turn-  
on of the output switches. The internal high-side bootstrap power supply derived from the +VB supply completely elimi-  
nates the need for 3 floating independent power supplies.  
EQUIVALENT SCHEMATIC  
TYPICAL APPLICATIONS  
PIN-OUT INFORMATION  
1 H INA  
2 L INA  
3 +VCC  
4 H INB  
5 L INB  
6 COM  
7 +VDD  
8 +VB  
9 H INC  
10 L INC  
V+  
N/C  
AV-  
AØ  
N/C  
BV-  
BØ  
N/C  
CV-  
CØ  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
TYPICAL APPLICATIONSPIN-OUT INFORMATION  
3 PHASE SIX STEP DC BRUSHLESS MOTOR DRIVE  
OR 3 PHASE SINUSOIDAL INDUCTION MOTOR DRIVE  
CASE=ISOLATED  
1
8548-35 Rev. J 8/14  
7
ABSOLUTE MAXIMUM RATINGS  
9
V+  
+VDD Logic Supply  
VH/LIN Logic Input Voltage  
Logic Input Current  
+VCC Lowside Supply  
+VB  
IOUT  
θJC  
High Voltage Supply  
100V  
18V  
VDD  
10mA  
18V  
18V  
IPK  
Peak Output Current  
14A  
Storage Temperature Range10 -65° to +150°C  
Lead Temperature Range  
TsT  
TLD  
TC  
IH/LIN  
(10 Seconds)  
Case Operating Temperature  
MSK4304RH  
MSK4304KE/HE RH  
Junction Temperature  
300°C  
Highside Supply  
-40°C to +85°C  
-40°C to +125°C  
+150°C  
Continuous Output Current  
Thermal Resistance @ 125°C  
(Output Switches,Junction to Case)  
10A  
TJ  
2.5°C/W  
ELECTRICAL SPECIFICATIONS  
3
2
GROUP A  
SUBGROUP  
5
MSK4304KE/HE RH  
MSK4304RH  
UNITS  
Parameters  
8
Test Conditions  
Min. Typ. Max. Min. Typ. Max.  
OUTPUT CHARACTERISTICS  
-
-
-
-
-
-
-
-
-
-
0.08  
-
-
1.6  
-
-
25  
-
1
2
3
1
-
-
-
-
-
-
-
-
-
-
-
-
-
0.08  
0.16  
0.08  
1.5  
2.4  
1.2  
25  
250  
25  
-
-
-
Ω
Ω
Ω
volts  
volts  
volts  
μA  
μA  
μA  
nS  
Drain-Source ON Resistance 1  
(each MOSFET) (for thermal calculations only)  
IDS=10A  
IDS=10A  
0.8  
1.4  
0.6  
1
10  
1
0.8  
-
-
1
-
-
Drain-Source Voltage (VDS(on))  
(each MOSFET)  
1
2
1
3
V+ = 80V  
V+ = 80V  
V+ = 80V  
1
2
3
-
Leakage Current (Each MOSFET)  
-
Reverse Recovery Time 1  
ID=10A, di/dt=100A/μS  
370  
-
370  
-
BODY DIODE CHARACTERISTICS  
-
-
-
VSD Diode Forward Voltage  
TRR Reverse Recovery Time  
QRR Reverse Recovery Charge  
IS=18A, VGS=0V  
IF=18A  
di/dt<100A/us, VDD<25V  
1.2  
250  
850  
1
1
1
1
1
-
-
-
-
-
-
1.2  
250  
850  
-
-
-
V
ns  
nC  
1
BIAS SUPPLY CHARACTERISTICS  
-
-
-
-
-
-
-
-
-
-
0.02  
-
0.02  
-
2
6
2
6
9
0.02  
-
0.02  
-
2
6
2
6
9
mA  
mA  
mA  
mA  
mA  
1,3  
2
1,3  
2
+VCC Bias Current  
+VCC=15V  
+VB Bias Current  
+VB=15V  
+VDD Bias Current  
+VDD=15V  
4.5  
4.5  
1,2,3  
INPUT SIGNAL CHARACTERISTICS  
Positive Trigger Threshold Voltage  
Negative Trigger Threshold Voltage  
-
0.8  
8.0  
-
-10  
-
+VCC=15V  
+VCC=15V  
+VDD  
3.0  
-
12.0  
75  
-
-
-
-
2.3  
3.0  
-
12.0  
75  
-
-
-
2.3  
1.8  
10  
volts  
volts  
volts  
μA  
μA  
μJ  
1,2,3  
1,2,3  
1,2,3  
1,2,3  
1,2,3  
4
0.8 1.8  
8.0  
-
-10 -1.2  
-
-
6
Under-voltage Lockout  
10  
25  
25  
VIN=+5V  
Logic Input Current  
All Inputs  
-1.2  
TBD  
TBD  
VIN=0V  
E(ON)  
E(OFF)  
TBD  
TBD  
1
Switching Loss Inductive Load  
-
4
μJ  
NOTES:  
Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.  
Industrial grade devices shall be tested to subgroups 1 unless otherwise specified.  
Space and Military grade devices ("KE & HE" suffix) shall be 100% tested to subgroups 1, 2 and 3.  
Subgroups 5 and 6 testing available upon request.  
1
2
3
4
5
Subgroup 1, 4 TA=TC=+25°C  
2, 5 TA=TC=+125°C  
3, 6 TA=TC=-40°C for 'KE' and 'HE' SUFFIXES  
See UVLO paragraph in the application notes section.  
6
7
8
9
Continuous operation at or above absolute maximum ratings may adversely effect the device performance and/or life cycle.  
Pre and post irradiation limits at 25°C, up to 300Krad TID, are identical unless otherwise specified.  
When applying power to the device, apply the low voltage followed by the high voltage or alternatively,apply both at the same time.  
Do not apply high voltage without low voltage present.  
Internal solder reflow temperature is 180°C, do not exceed.  
10  
2
8548-35 Rev. J 8/14  
TYPICAL PERFORMANCE CURVE  
3
8548-35 Rev. J 8/14  
APPLICATION NOTES  
MSK 4304RH PIN DESCRIPTIONS  
UVLO - The under voltage lockout function of the MSK4304RH  
prevents the device from starting before sufficient bias volt-  
age is available. The UVLO feature monitors the VDD supply  
and holds the outputs low until the voltage level rises above  
the threshold during start up. After start up the UVLO circuit  
will hold the low side switches off if VDD falls below the thresh-  
old but the high side switches will not be controlled by UVLO  
after start up.  
+VCC - Is the low voltage supply for the lowside driv-  
ers. A 0.1 μF ceramic capacitor in parallel with a 10μF  
tantalum capacitor is the recommended bypassing from  
the +VCC pin to the COM pin.  
+VDD - Is the low voltage supply for the input logic to  
the hybrid. A 0.1 μF ceramic capacitor in parallel with  
a 4.7μF tantalum capacitor is the recommended by-  
passing to the COM pin.  
MAXIMUM DUTY CYCLE AND HIGH SIDE BIAS - The  
MSK4304RH uses three independent bootstrap circuits to  
power each of the high side switches. When the switches are  
turned on the high side drivers are powered by the charge  
in the bootstrap capacitors. The voltage on the bootstrap  
capacitors has an initial 1.2V drop and decays at a rate of  
approximately 0.5V every 100μS. The voltage can be ap-  
proximated by the equation:  
+VB - Is the connection used to provide power to the  
floating high-side bootstrap supplies in the gate drive  
circuitry.  
V+ - Is the high voltage positive rail connection to the  
tops of the three half bridges. Proper power supply  
bypassing must be connected from this pin to the COM  
pin for good filtering. This bypassing must be done as  
close to the hybrid as possible. +VCC, +VDD and +VB  
should be present and stable whenever V+ is present.  
VBS = +VB - 1.2V - 5 x TON  
TON is the switch on time in mS  
VBS is the bootstrap capacitor voltage  
VBS should be greater than or equal to 10 volts for maxi-  
mum gate drive. If VBS falls too low loss of high side con-  
trol my result.  
H INA, H INB, H INC - Are active high logic inputs for  
signalling the corresponding phase high-side switch to  
turn on. The logic inputs are compatible with standard  
LSTTL/CMOS outputs. These inputs are clamped to VDD  
and COM, they must be limited to less than 10mA if  
they are allowed to exceed those limits.  
The lowside switches must be activate every cycle or held  
active during static operation to provide a return path for  
charging the highside bootstrap capacitor and prevent loss  
of highside control.  
L INA, L INB, L INC - Are active high inputs for signal-  
ling the corresponding phase low-side switch to turn  
on. The logic inputs are compatible with standard  
LSTTL/CMOS outputs. These inputs are clamped to VDD  
and COM, they must be limited to less than 10mA if  
they are allowed to exceed those limits.  
TOTAL DOSE RADIATION TEST  
PERFORMANCE  
Radiation performance curves for TID testing have been  
generated for all radiation testing performed by MS Kennedy.  
These curves show performance trends throughout the TID  
test process and can be located in the MSK4304RH radiation  
test report. The complete radiation test report is available in  
the RAD HARD PRODUCTS section on the MSK website.  
AØ, BØ, CØ - Are the pins connecting the 3 phase  
bridge switch outputs.  
AV-, BV-, CV- - Are the connections from the bottoms  
of the three half bridges. These pins get connected to  
the COM pin. If current sensing is desired they may be  
connected to the COM pin through a low value sense  
resistor.  
http://www.mskennedy.com/store.asp?pid=9951&catid=19680  
COM - Is the connection that all hybrid power supply  
connections are returned to and bypassed to.  
8548-35 Rev. J 8/14  
4
TYPICAL SYSTEM OPERATION  
The MSK4304RH is designed to be used with a +28 volt high voltage bus, +15 volt low power bus and +5 volt logic  
signals. Proper derating should be applied when designing the MSK4304RH into a system. High frequency layout tech-  
niques with ground planes on a printed circuit board is the only method that should be used for circuit construction. This will  
prevent pulse jitter caused by excessive noise pickup on the current sense signal or the error amp signal.  
Ground planes for the lower power circuitry and the high power circuitry should be kept separate. The connection  
between the bottom of the current sense resistor, COM pin and the high power ground, AV-, BV- and CV- pins are  
connected at this point. This is a critical path and high currents should not be flowing between the current sense and  
COM. Inductance in this path should be kept to a minimum. An RC filter will filter out the current spikes and keep the  
detected noise for those circuits down to a minimum.  
In the system shown a PWM pulse by pulse current limit scheme controlled by the motor controller is implemented.  
When controlling the motor speed by the PWM method, it is required that the low side switches be PWM pulsed to  
ensure sufficient bootstrap capacitor charge to power the high side switch drives. The higher the PWM speed the  
higher the current load on the drive supply.  
8548-35 Rev. J 8/14  
5
MECHANICAL SPECIFICATIONS  
CONTAINS INTERNAL BeO (BERYLLIUM OXIDE)  
ALL DIMENSIONS ARE SPECIFIED IN INCHES  
ESD TRIANGLE INDICATES PIN 1  
WEIGHT=42 GRAMS TYPICAL  
ORDERING INFORMATION  
MSK4304 RH U  
LEAD CONFIGURATIONS  
S=STRAIGHT; U=BENT UP; D=BENT DOWN  
SCREENING  
BLANK=INDUSTRIAL; HE=MIL-PRF-38534 CLASS H (REDUCED TEMP);  
KE=MIL-PRF-38534 CLASS K (REDUCED TEMP);  
GENERAL PART NUMBER  
8548-35 Rev. J 8/14  
6
REVISION HISTORY  
M.S. Kennedy Corp.  
Phone (315) 701-6751  
FAX (315) 701-6752  
www.mskennedy.com  
The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make  
changes to its products or specifications without notice, however and assumes no liability for the use of its products.  
Please visit our website for the most recent version of this datasheet.  
8548-35 Rev. J 8/14  
7

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