AM3810N [ANALOGPOWER]
Dual N-Channel 20-V (D-S) MOSFET; 双N通道20 -V (D -S )的MOSFET型号: | AM3810N |
厂家: | ANALOG POWER |
描述: | Dual N-Channel 20-V (D-S) MOSFET |
文件: | 总5页 (文件大小:419K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Analog Power
AM3810N
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
Key Features:
rDS(on) (mΩ)
VDS (V)
20
ID(A)
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
24.5 @ VGS = 4.5V
38 @ VGS = 2.5V
6
5
Typical Applications:
• Battery Powered Instruments
• Portable Computing
• Mobile Phones
• GPS Units and Media Players
TSOP6
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
Units
Drain-Source Voltage
Gate-Source Voltage
20
V
VGS
±10
TA=25°C
6
3.6
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
ID
TA=100°C
A
IDM
IS
20
1
A
TA=25°C
0.83
0.3
Power Dissipation a
PD
W
°C
TA=100°C
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum
Units
t <= 10 sec
Steady State
110
Maximum Junction-to-Ambient a
°C/W
RθJA
150
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS-AM3810N-2010-rev2
Analog Power
AM3810N
Electrical Characteristics
Parameter
Symbol
Test Conditions
Static
Min
Typ
Max
Unit
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±10 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 85°C
VDS = 5 V, VGS = 10 V
VGS = 4.5 V, ID = 6 A
VGS = 2.5 V, ID = 5 A
VDS = 10 V, ID = 6 A
IS = 1 A, VGS = 0 V
Dynamic
Gate-Source Threshold Voltage
Gate-Body Leakage
0.5
1.0
±100
1
V
nA
IDSS
ID(on)
Zero Gate Voltage Drain Current
On-State Drain Current
uA
A
30
10
24.5
38
rDS(on)
Drain-Source On-Resistance
mΩ
gfs
Forward Transconductance
Diode Forward Voltage
10
S
V
VSD
0.7
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
12.5
0.7
4.3
5
VDS = 10 V, VGS = 4.5 V, ID = 5.4 A
nC
ns
VDD = 10 V, RL = 10 Ω, ID = 1 A,
VGEN = 4.5 V, RGEN = 6 Ω
14
td(off)
tf
Turn-Off Delay Time
Fall Time
30
5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
700
125
110
VDS = 10 V, VGS = 0 V, f = 1 MHz
pF
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out
of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary
in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL
products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation
where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application,
Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated
with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part.
APL is an Equal Opportunity/Affirmative Action Employer.
© Preliminary
2
Publication Order Number:
DS-AM3810N-2010-rev2
Analog Power
AM3810N
Electrical Characteristics
0.06
0.05
0.04
0.03
0.02
0.01
0
10
TJ = 25°C
9
8
7
6
5
4
3
2
1
0
1.8V
2.5V
4.5V
6V,8V,10V
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
VGS - Gate-to-Source Voltage (V)
2. Transfer Characteristics
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
10
1
TJ = 25°C
ID = 6A
TJ = 25°C
0.1
0.01
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
VGS - Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
VSD - Source-to-Drain Voltage (V)
4. Drain-to-Source Forward Voltage
10
9
8
7
6
5
4
3
2
1
0
1600
1400
1200
1000
800
600
400
200
0
10V,8V,6V
4.5V
2.5V
F = 1MHz
1.8V
Ciss
Coss
Crss
0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
VDS-Drain-to-Source Voltage (V)
5. Output Characteristics
6. Capacitance
© Preliminary
3
Publication Order Number:
DS-AM3810N-2010-rev2
Analog Power
AM3810N
Typical Electrical Characteristics
5
2
VDS = 10V
4.5
ID = 5.4A
4
3.5
3
1.5
1
2.5
2
1.5
1
0.5
0
0
0.5
5
10
15
-50 -25
0
25
50
75 100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
© Preliminary
4
Publication Order Number:
DS-AM3810N-2010-rev2
Analog Power
AM3810N
Package Information
TSOP6
Dimensions In Millimeters
Symbol
MIN.
---
---
MAX.
1.45
0.15
1.3
A
A1
A2
D
0.9
2.90 BSC
E
2.890 BSC
E1
c
b
1.5
0.08
0.3
1.7
0.25
0.5
e
e1
L
0.95BSC
1.90BSC
0.3
0.6
© Preliminary
5
Publication Order Number:
DS-AM3810N-2010-rev2
相关型号:
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