AWT6155 [ANADIGICS]
Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control; 四频GSM / GPRS / EDGE功率放大器模块集成功率控制
| 型号： | AWT6155 |
| 厂家： | 
ANADIGICS, INC |
| 描述： | Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control |
| 文件： | 总16页 (文件大小：536K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢁWt6155
Quad-band GsM/GPꢃs/ꢀDGꢀ
Power Amplifier Module
wiꢄh Inꢄegraꢄed Power Conꢄrol
Daꢄa sheeꢄ - ꢃev 2.0
Fꢀꢁtꢂꢃꢀs
•ꢀ Internal Reference Voltage
•ꢀ Integrated Power Control
•ꢀ InGaP HBT Technology
•ꢀ ESD Protection on All Pins (2.5 kV)
•ꢀ Low profile 1.0 mm
•ꢀ Small Package Outline 5 mm x 5 mm
•ꢀ EGPRS Capable (class 12)
•ꢀ RoHS Compliant Package, 250 oC MSL-3
A
W
T6155R
GMsK MODꢀ
•ꢀ +34.8 dBm GSM850/900 Output Power
•
+33 dBm DCS/PCS Output Power
•ꢀ 55 % GSM 900 PAE
51 % DCS/PCS PAE
•
•ꢀ Power control range > 50 dB
ꢀDGꢀ MODꢀ
•
•
+29 dBm GSM850/900 Output Power
+28.5 dBm DCS/PCS Output Power
M37 Package
11 Pin 5 mm x 5 mm x 1.0 mm
surface Mounꢄ Module
•ꢀ 28% GSM850/900 PAE
•ꢀ 28% DCS/PCS PAE
•ꢀ -64 dBc Typical ACPR (400 kHz)
•ꢀ -74 dBc Typical ACPR (600 kHz)
ꢁPPLICꢁtIONs
•
Dual/Tri/Quad Band Handsets, PDAs, and
Data Devices
The amplifier’s power control range is typically
55 dB, with the output power set by applying
an analog voltage to VRAMP. All of the RF ports
for this device are internally matched to 50ꢀ .
PꢃODꢂCt DꢀsCꢃIPtION
This power amplifier module supports dual, tri
and quad band applications for GMSK and 8-PSK
modulation schemes using a polar architecture.
There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
Each amplification chain is optimized for excellent
EDGE efficiency, power, and linearity in a Polar loop
environment while maintaining high efficiency in the
GSM/GPRS mode.
DCS/PCS
DCS/PCS_IN
DCS/PCS_OUT
BS
TX_EN
The module includes an internal reference voltage
and integrated power control scheme for use in both
GMSK and 8-PSK operation. This facilitates fast and
easy production calibration and reduces the number
of external components required to complete a power
control function.
Bias/Power
Control
VBATT
VRAMP
GSM850/900_IN
GSM850/900_OUT
GSM850/900
Figure 1: Block Diagram
02/2009
ꢁWt6155
1
2
3
11
DCS/PCS_OUT
DCS/PCS_IN
BS
TX_EN
10 N/C
VBATT
VRAMP
CEXT
4
GND
5
6
7
GND
8
9
GSM850/900_IN
GSM850/900_OUT
Figure 2: Pinouꢄ (X - ray top View)
table 1: Pin Deꢅcripꢄion
PIN
NꢁMꢀ
DꢀsCꢃIPtION
PIN
NꢁMꢀ
DꢀsCꢃIPtION
RF input to the
DCS/PCS PA. There is a
175 shunt resistor
before the DC blocking
capacitor to set the input
impedance.
1
DCS/PCS_IN
7
GND
Ground
RF Input to GSM850/900
PA. There is a 185 shunt
2
BS
Band Select Logic Input
8
GSM850/900_IN resistor before the DC
blocking capacitor to set the
input impedance.
3
4
TX_EN
TX Enable Logic Input
9
GSM850/900_OUT GSM900 RF Output
Battery Supply
Connection
No Connection
N/C
V
BATT
10
Do not connect to ground
Analog Signal used to
control output power
5
6
V
RAMP
11
DCS/PCS_OUT DCS RF Output
C
EXT
Bypass (VREG)
2
Data Sheet - Rev 2.0
02/2009
ꢁWt6155
ꢀLꢀCtꢃICꢁL CHꢁꢃꢁCtꢀꢃIstICs
table 2: ꢁbꢅoluꢄe Maximum ꢃaꢄingꢅ
PꢁꢃꢁMꢀtꢀꢃ
Supply Voltage (VBATT
RF Input Power (RFIN
Control Voltage (VRAMP
Storage Temperature (TSTG
MIN
-
MꢁX
+5.5
11
ꢂNIts
V
)
)
-
dBm
V
)
-0.3
-55
1.8
)
150
°C
sꢄreꢅꢅeꢅ in exceꢅꢅ of ꢄhe abꢅoluꢄe raꢄingꢅ may cauꢅe permanenꢄ
damage. Funcꢄional operaꢄion iꢅ noꢄ implied under ꢄheꢅe
condiꢄionꢅ. ꢀxpoꢅure ꢄo abꢅoluꢄe raꢄingꢅ for exꢄended periodꢅ
of ꢄime may adverꢅely affecꢄ reliabiliꢄy.
DCS/PCS_IN
>+2500 V <-2500 V
DCS/PCS_OUT
>+2500 V <-2500 V
1
2
3
11
10
BS
>+2500 V <-2500 V
TX_EN
>+2500 V <-2500 V
VBATT
>+2500 V <-2500 V
N/C
4
GND
VRAMP
>+2500 V <-2500 V
5
6
CEXT
>+2500 V <-2500 V
GND
7
8
GSM850/900_OUT
>+2500 V <-2500 V
GSM850/900_IN
>+2500 V <-2500 V
9
Figure 3: ꢀsD Pin ꢃaꢄing
ꢀLꢀCtꢃOstꢁtIC DIsCHꢁꢃGꢀ sꢀNsItIVItY
The AWT6155 part was tested to determine the ESD
sensitivity of each package pin with respect to ground.
All the package pins were subjected to an ESD
pulse event using the Human Body Model outlined
in JESD22-A114C.01 in either polarity with respect
to ground. The pre and post test I-V characteristics
of each pin are recorded. The ratings on each pin
require that it sustain the ESD event and show no
degradation.
3
Data Sheet - Rev 2.0
02/2009
ꢁWt6155
table 3: Operaꢄing Condiꢄionꢅ
MIN tYP MꢁX ꢂNIts
PꢁꢃꢁMꢀtꢀꢃ
COMMꢀNts
Case temperature (T
C
)
-20
3.0
-
+85
4.8
°C
V
Supply voltage (VBATT
)
3.5
V
BATT = 4.8 V, VRAMP = 0 V,
A
Power supply leakage current
-
1
10
TX_EN = LOW
No RF applied
Control Voltage Range
0.2
-
-
1.6
1
V
V
P
RAMP = 0.2 V, TX_EN = LOW YHIGH
IN = 5 dBm
s
Turn on Time (TON
)
-
V
P
RAMP = 0.2 V, TX_EN = HIGH YLOW
IN = 5 dBm
s
Turn Off Time (TOFF
)
-
-
1
s
s
Rise Time (TRISE
Fall Time (TFALL
)
-
-
-
-
-
-
-
1
1
P
OUT = -10 dBm YPMAX (within 0.2 dB)
)
POUT = PMAX Y-10 dBm (within 0.2 dB)
V
V
RAMP Input Capacitance
RAMP Input Current
3
-
-
pF
A
10
50
Duty Cycle
-
%
the device may be operaꢄed ꢅafely over ꢄheꢅe condiꢄionꢅ; however, parameꢄric performance iꢅ guaranꢄeed only
over the conditions defined in the electrical specifications.
table 4: Digiꢄal Inpuꢄꢅ
PꢁꢃꢁMꢀtꢀꢃ
sYMBOL
MIN tYP MꢁX ꢂNIts
Logic High Voltage
Logic Low Voltage
Logic High Current
Logic Low Current
V
IH
1.2
-
-
-
-
3.0
0.5
30
V
V
IL
-
-
-
V
A
A
|IIH
|
|IIL
|
30
table 5: Logic Conꢄrol table
OPꢀꢃꢁtIONꢁL MODꢀ
Bs
LOW
HIGH
-
tX_ꢀN
HIGH
GSM850/900
DCS/PCS
HIGH
PA DISABLED
LOW
4
Data Sheet - Rev 2.0
02/2009
ꢁWt6155
table 6: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for GsM850 GMsK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulꢅe Widꢄh = 1154 µꢅ, Duꢄy = 25%
ZIN = ZOUT = 50 Ω, tC = 25 °C, VRAMP = 1.6 V, Bs = LOW, tX_ꢀN = HIGH
PꢁꢃꢁMꢀtꢀꢃ
MIN
824
0
tYP
-
MꢁX
849
5
ꢂNIt
MHz
dBm
dBm
COMMꢀNts
Operating Frequency
(
F
IN )
Input Power (PIN
)
3
Output Power (PMAX
)
34.0
34.8
-
Freq = 824 to 849 MHz
Degraded Output Power
(POUT
V
P
BATT = 3.0 V, T
IN = 0 dBm
C
= +85 °C
32
32.8
-
dBm
)
PAE @ PMAX
48
-
53
-
%
Freq = 824 to 849 MHz
Forward Isolation 1
-49
-30
dBm
TX_EN = 0 V, PIN = 5 dBm
TX_EN = HIGH ,VRAMP = 0.2 V
Forward Isolation 2
-
-
-
-29
-30
-20
-15
-20
-12
dBm
dBm
dBm
P
IN = 5 dBm
Cross Isolation
(2Fo @ DCS/PCS port)
P
OUT < 34.0 dBm
Cross Isolation
(3Fo @ DCS/PCS port)
P
OUT < 34.0 dBm
Second Harmonic
Third Harmonic
-
-
-23
-10
-10
dBm
dBm
P
P
OUT < 34.0 dBm
OUT < 34.0 dBm
-18
n * fo (n > 4), Fo 12.75
GHz
-
-30
-10
dBm
P
OUT < 34.0 dBm
VSWR = 6:1 All Phases , POUT < 34.0 dBm
Stability
-
-
-
-
-36
dBm
dBm
F
F
OUT < 1 GHz
OUT > 1 GHz
-30
No Permanent Degradation
VSWR 10:1, All Phase Angles
Ruggedness
POUT < 34.0 dBm
F
F
TX = 849 MHz, RBW = 100 kHz,
RX = 869 to 894 MHz, POUT < 34.0 dBm
RX Noise Power
Input Return Loss
-
-
-88
-82
dBm
1.5:1 2.5:1 VSWR
POUT < 34.0 dBm
5
Data Sheet - Rev 2.0
02/2009
ꢁWt6155
table 7: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for GsM850 8PsK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulꢅe Widꢄh = 1154 µꢅ, Duꢄy = 25%
ZIN = ZOUT = 50 Ω, tC = 25 °C, Bs = LOW, tX_ꢀN = HIGH
PꢁꢃꢁMꢀtꢀꢃ
Operating Frequency
Input Power
MIN
824
0
tYP
MꢁX
849
5
ꢂNIt
MHz
dBm
COMMꢀNts
(
F
IN )
-
3
F
P
IN = 824 to 849 MHz
OUT set = +29 dBm
PAE
20
28
-
%
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-
-
-
-37
-62
-74
-78
-34
-58
-64
-66
dBc/30 kHz
dBc/30 kHz All conditions under Polar operation
dBc/30 kHz
dBc/100 kHz
POUT = +29 dBm
All Conditions under Polar operation
OUT = +29 dBm
EVM
-
1
5
%
P
6
Data Sheet - Rev 2.0
02/2009
ꢁWt6155
table 8: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for GsM900 GMsK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulꢅe Widꢄh = 1154 µꢅ, Duꢄy = 25%
ZIN = ZOUT = 50 Ω, tC = 25 °C, VRAMP = 1.6 V, Bs = LOW, tX_ꢀN = HIGH
PꢁꢃꢁMꢀtꢀꢃ
MIN
880
0
tYP
-
MꢁX
915
5
ꢂNIt
MHz
dBm
dBm
COMMꢀNts
Operating Frequency
(
F
IN )
Input Power (PIN
)
3
Output Power (PMAX
)
34.0
34.8
-
Freq = 880 to 915 MHz
Degraded Output Power
(POUT
V
P
BATT = 3.0 V, T
IN = 0 dBm
C
= +85 °C
32
32.8
-
dBm
)
PAE @ PMAX
50
56
-
%
Freq = 880 to 915 MHz
Forward Isolation 1
-
-46
-30
dBm
TX_EN = 0 V, PIN = 5 dBm
TX_EN = HIGH ,VRAMP = 0.2 V
Forward Isolation 2
Cross Isolation
-
-
-
-28
-24
-21
-15
-18
-12
dBm
dBm
dBm
P
IN = 5 dBm
P
OUT < 34.0 dBm
(2Fo @ DCS/PCS port)
Cross Isolation
(3F @ DCS/PCS port)
P
OUT < 34.0 dBm
o
Second Harmonic
Third Harmonic
-
-
-22
-10
-10
dBm
dBm
P
P
OUT < 34.0 dBm
OUT < 34.0 dBm
-18
n * fo (n > 4), Fo 12.75
GHz
-
-29
-8
dBm
P
OUT < 34.0 dBm
VSWR = 6:1 All Phases , POUT < 34.0 dBm
Stability
-
-
-
-
-36
dBm
dBm
F
F
OUT < 1 GHz
OUT > 1 GHz
-30
No Permanent Degradation
VSWR 10:1, All Phase Angles
Ruggedness
POUT < 34.0 dBm
F
F
TX = 915 MHz, RBW = 100 kHz,
RX = 925 to 935 MHz, POUT < 34.0 dBm
-
-87
-87
-76
-82
dBm
dBm
RX Noise Power
F
F
TX = 915 MHz, RBW = 100 kHz,
RX = 935 to 960 MHz, POUT < 34.0 dBm
-
-
Input Return Loss
1.5:1 2.5:1 VSWR
POUT < 34.0 dBm
7
Data Sheet - Rev 2.0
02/2009
ꢁWt6155
table 9: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for GsM900 8PsK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulꢅe Widꢄh = 1154 µꢅ, Duꢄy = 25%
ZIN = ZOUT = 50 Ω, tC = 25 °C , Bs = LOW, tX_ꢀN = HIGH
PꢁꢃꢁMꢀtꢀꢃ
Operating Frequency
Input Power
MIN
880
0
tYP
MꢁX
915
5
ꢂNIt
MHz
dBm
COMMꢀNts
(
F
IN )
-
3
F
P
IN = 880 to 915 MHz
OUT set = +29 dBm
PAE
20
28
-
%
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-
-
-
-38
-65
-74
-78
-34
-58
-64
-66
dBc/30 kHz
dBc/30 kHz All conditions under Polar operation
dBc/30 kHz
dBc/100 kHz
POUT = +29 dBm
All Conditions under Polar operation
OUT = +29 dBm
EVM
-
1
5
%
P
8
Data Sheet - Rev 2.0
02/2009
ꢁWt6155
table 10: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for DCs GMsK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, VRAMP = 1.6 V, Pulꢅe Widꢄh = 1154 µꢅ
Duꢄy = 25%, ZIN = ZOUT = 50 Ω, tC = 25 °C , Bs = HIGH, tX_ꢀN = HIGH
PꢁꢃꢁMꢀtꢀꢃ
MIN
1710
0
tYP
-
MꢁX
ꢂNIt
MHz
dBm
dBm
COMMꢀNts
Operating Frequency
(
F
IN
)
1785
Input Power (PIN
)
3
5
-
Output Power (PMAX
)
32.0
32.9
Freq = 1710 to1785 MHz
Degraded Output Power
(POUT
V
P
BATT = 3.0 V, T
IN = 0 dBm
C
= +85 °C
30.0
31.0
-
dBm
)
PAE @ PMAX
45
-
51
-
%
Freq = 1710 to1785 MHz
Forward Isolation 1
-46
-30
dBm
TX_EN = 0 V, PIN = 5 dBm
TX_EN = HIGH ,VRAMP = 0.2 V
Forward Isolation 2
-
-27
-15
dBm
P
P
P
IN = 5 dBm
Second Harmonic
Third Harmonic
-
-
-19
-30
-10
-15
dBm
dBm
OUT < 32.0 dBm
OUT < 32.0 dBm
n * fo (n > 4), Fo 12.75
GHz
-
-34
-8
dBm
P
OUT < 32.0 dBm
VSWR = 8:1 All Phases , POUT < 32.0 dBm
Stability
-
-
-
-
-36
dBm
dBm
F
F
OUT < 1 GHz
OUT > 1 GHz
-30
No Permanent Degradation
VSWR 10:1, All Phase Angles
Ruggedness
POUT < 32.0 dBm
F
F
TX = 1785 MHz, RBW = 100 kHz,
RX = 1805 to1880 MHz, POUT < 32.0 dBm
RX Noise Power
Input Return Loss
-
-
-89
-82
dBm
1.5:1 2.5:1 VSWR
POUT < 32.0 dBm
9
Data Sheet - Rev 2.0
02/2009
ꢁWt6155
table 11: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for DCs 8PsK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulꢅe Widꢄh = 1154 µꢅ, Duꢄy = 25%
ZIN = ZOUT = 50 Ω, tC = 25 °C , Bs = HIGH, tX_ꢀN = HIGH
PꢁꢃꢁMꢀtꢀꢃ
Operating Frequency
Input Power
MIN
IN ) 1710
0
tYP
MꢁX
1785
5
ꢂNIt
MHz
dBm
COMMꢀNts
(
F
-
3
F
P
IN = 1710 to 1785 MHz
OUT set = +28.5 dBm
PAE
22
28
-
%
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-
-
-
-37
-64
-74
-78
-34
-58
-64
-66
dBc/30 kHz
dBc/30 kHz All conditions under Polar operation
dBc/30 kHz
dBc/100 kHz
POUT = +28.5 dBm
All Conditions under Polar operation
OUT = +28.5 dBm
EVM
-
1
5
%
P
10
Data Sheet - Rev 2.0
02/2009
ꢁWt6155
table 12: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for PCs GMsK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, VRAMP = 1.6 V, Pulꢅe Widꢄh = 1154 µꢅ
Duꢄy = 25%, ZIN = ZOUT = 50 Ω, tC = 25 °C , Bs = HIGH, tX_ꢀN = HIGH
PꢁꢃꢁMꢀtꢀꢃ
MIN
1850
0
tYP
-
MꢁX
ꢂNIt
MHz
dBm
dBm
COMMꢀNts
Operating Frequency
(F
IN)
1910
Input Power (PIN
)
3
5
-
Output Power (PMAX
)
32.0
32.9
Freq = 1850 to1910 MHz
Degraded Output Power
(POUT
V
P
BATT = 3.0 V, T
IN = 0 dBm
C
= +85 °C
30.0
31.0
-
dBm
)
PAE @ PMAX
45
-
51
-
%
Freq = 1850 to1910 MHz
Forward Isolation 1
-45
-30
dBm
TX_EN = 0 V, PIN = 5 dBm
TX_EN = HIGH ,VRAMP = 0.2 V
Forward Isolation 2
-
-27
-15
dBm
P
P
P
IN = 5 dBm
Second Harmonic
Third Harmonic
-
-
-26
-34
-10
-15
dBm
dBm
OUT < 32.0 dBm
OUT < 32.0 dBm
n * fo (n > 4), Fo 12.75
GHz
-
-33
-8
dBm
P
OUT < 32.0 dBm
VSWR = 8:1 All Phases , POUT < 32.0 dBm
Stability
-
-
-
-
-36
dBm
dBm
F
F
OUT < 1 GHz
OUT > 1 GHz
-30
No Permanent Degradation
VSWR 10:1, All Phase Angles
Ruggedness
POUT < 32.0 dBm
F
F
TX = 1910 MHz, RBW = 100 kHz,
RX = 1930 to1990 MHz, POUT < 32.0 dBm
RX Noise Power
Input Return Loss
-
-
-90
-82
dBm
1.5:1 2.5:1 VSWR
POUT < 32.0 dBm
11
Data Sheet - Rev 2.0
02/2009
ꢁWt6155
table 13: ꢀlecꢄrical Characꢄeriꢅꢄicꢅ for PCs 8PsK mode
Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulꢅe Widꢄh = 1154 µꢅ, Duꢄy = 25%
ZIN = ZOUT = 50 Ω, tC = 25 °C , Bs = HIGH, tX_ꢀN = HIGH
PꢁꢃꢁMꢀtꢀꢃ
Operating Frequency
Input Power
MIN
1850
0
tYP
MꢁX
1910
5
ꢂNIt
MHz
dBm
COMMꢀNts
(F
IN)
-
3
F
P
IN = 1850 to 1910 MHz
OUT set = +28.5 dBm
PAE
22
28
-
%
ACPR
200 kHz
400 kHz
600 kHz
1800 kHz
-
-
-
-
-37
-64
-74
-78
-34
-58
-64
-66
dBc/30 kHz
dBc/30 kHz All conditions under Polar operation
dBc/30 kHz
dBc/100 kHz
POUT = +28.5 dBm
All Conditions under Polar operation
OUT = +28.5 dBm
EVM
-
1
5
%
P
12
Data Sheet - Rev 2.0
02/2009
ꢁWt6155
ꢁPPLICꢁtION INFOꢃMꢁtION
Matching4)
DCS/PCS
RF INPUT
1
2
3
4
5
6
7
8
11
10
DCS/PCS_IN
BS
DCS/PCS_OUT
BSEL
TXEN
VBAT
RAMP
33pF 3)
33pF 3)
2.7pF 2)
68pF 1)
22nF 2)
TX_EN
VBATT
ꢁsM
or
FꢀM
N/C
47µF 3)
12pF 2)
ꢁWt6155
VRAMP
CEXT
2.2k 1)
GND
Matching 4)
GSM RF
INPUT
9
GSM_IN
GSM_OUT
1) Component values depends on baseband chipset used.
2) This component should be placed as close to the device pin as possible.
3) These components are recommended as good design practice for improving noise rejection characteristics.
The values specified are not critical as they may not be required in the final application.
4) Actual matching component values depend on PCB layout and ASM/FEM used.
Figure 4: ꢃecommended ꢁpplicaꢄion Circuiꢄ
Figure 5: Branding Specification Diagram
13
Data Sheet - Rev 2.0
02/2009
ꢁWt6155
PꢁCKꢁGꢀ OꢂtLINꢀ
Figure 6: M37 Package Ouꢄline (P800-2414) - 11 Pin 5 mm x 5 mm x 1.0 mm surface Mounꢄ Module
14
Data Sheet - Rev 2.0
02/2009
ꢁWt6155
Figure 7: ꢃecommended PCB Layouꢄ Informaꢄion
15
Data Sheet - Rev 2.0
02/2009
ꢁWt6155
OꢃDꢀꢃING INFOꢃMꢁtION
OꢃDꢀꢃ
NꢂMBꢀꢃ
tꢀMPꢀꢃꢁtꢂꢃꢀ
PꢁCKꢁGꢀ
DꢀsCꢃIPtION
COMPONꢀNt PꢁCKꢁGING
ꢃꢁNGꢀ
RoHS-compliant 11 Pin
AWT6155RM37P8
AWT6155RM37P9
-20 °C to +85°C
5 mm x 5 mm x 1.0 mm Tape and Reel, 2500 pieces per reel
Surface Mount Module
RoHS-compliant 11 Pin
-20 °C to +85°C
5 mm x 5 mm x 1.0 mm
Surface Mount Module
Partial Tape and Reel
ꢁNꢁDIGICs, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
IMPOꢃtꢁNt NOtICꢀ
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
WꢁꢃNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of anANADIGICS product
in any such application without written consent is prohibited.
16
Data Sheet - Rev 2.0
02/2009
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