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元器件品牌
ND2010C000J0G
[AMPHENOL]
Barrier Strip Terminal Block;
元器件型号:
ND2010C000J0G
生产厂家:
AMPHENOL CORPORATION
描述和应用:
Barrier Strip Terminal Block
端子和端子排
PDF文件:
总1页 (文件大小:126K)
下载文档:
下载PDF数据表文档文件
型号参数:ND2010C000J0G参数
查看货源
ND2012E
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 160MA I(D) | TO-52
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156
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47
ETC
ND2012L
N-Channel Depletion-Mode MOSFET Transistors
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: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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25
TEMIC
ND2012L
N-Channel Depletion-Mode MOSFET Transistors
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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80
TEMIC
ND2012L-18
Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
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: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
VISHAY
ND2012L-18
Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
TEMIC
ND2012L18-1
Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
VISHAY
ND2012L18-2
Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
VISHAY
ND2012L-1TR1
Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
VISHAY
ND2012LTA
Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
TEMIC
ND2012LTA
Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
TEMIC
ND2012LTA
Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
VISHAY
ND2012LTR
Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
TEMIC
ND2012L-TR1
Small Signal Field-Effect Transistor, 0.16A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-92, 3PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
VISHAY
ND2020
N-Channel Depletion-Mode MOSFET Transistors
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
106
TEMIC
ND2020
N-Channel Depletion-Mode MOSFET Transistors
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
86
TEMIC
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