A67P0618E-3.2IF [AMICC]

ZBT SRAM, 1MX18, 3.2ns, CMOS, PQFP100, ROHS COMPLIANT, LQFP-100;
A67P0618E-3.2IF
型号: A67P0618E-3.2IF
厂家: AMIC TECHNOLOGY    AMIC TECHNOLOGY
描述:

ZBT SRAM, 1MX18, 3.2ns, CMOS, PQFP100, ROHS COMPLIANT, LQFP-100

时钟 静态存储器 内存集成电路
文件: 总18页 (文件大小:197K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
A67P0618/A67P9336 Series  
1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAM  
Document Title  
1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAM  
Revision History  
Rev. No. History  
Issue Date  
Remark  
0.0  
Initial issue  
September, 20, 2004  
Preliminary  
0.1  
0.2  
Add Pb-Free package type.  
January 27, 2006  
March 2, 2006  
Modify DC specification to exact value  
1.0  
Add –I grade  
June 1, 2007  
Final  
(June, 2007, Version 1.0)  
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
1M X 18, 512K X 36 LVTTL, Pipelined ZeBLTM SRAM  
„ Three separate chip enables allow wide range of  
Features  
„ Fast access time:  
2.6/2.8/3.2/3.5/3.8/4.2 (250/227/200/166/150/133MHz)  
„ Zero Bus Latency between READ and WRITE cycles  
allows 100% bus utilization  
„ Signal +2.5V ± 5% power supply  
„ Individual Byte Write control capability  
options for CE control, address pipelining  
„ Internally self-timed write cycle  
„ Selectable BURST mode (Linear or Interleaved)  
„ SLEEP mode (ZZ pin) provided  
„ Available in 100 pin LQFP package  
„ Industrial operating temperature range: -25°C to +85°C  
for -I series  
„ Clock enable (  
) pin to enable clock and suspend  
CEN  
operations  
„ All Pb-free (lead-free) product are RoHS compliant  
„ Clock-controlled and registered address, data and  
control signals  
„ Registered output for pipelined applications  
General Description  
The AMIC Zero Bus Latency (ZeBLTM) SRAM family  
employs high-speed, low-power CMOS designs using an  
advanced CMOS process.  
Write cycles are internally self-time and synchronous with  
the rising edge of the clock input and when R/  
is Low.  
W
The feature simplified the write interface. Individual Byte  
The A67P0618, A67P9336 SRAMs integrate a 1M X 18,  
512K X 36 SRAM core with advanced synchronous  
peripheral circuitry and a 2-bit burst counter. These SRAMs  
are optimized for 100 percent bus utilization without the  
insertion of any wait cycles during Write-Read alternation.  
The positive edge triggered single clock input (CLK) controls  
all synchronous inputs passing through the registers. The  
synchronous inputs include all address, all data inputs,  
enables allow individual bytes to be written. controls  
BW1  
controls I/Oc pins;  
I/Oa pins;  
controls I/Ob pins;  
BW3  
BW2  
and  
controls I/Od pins. Cycle types can only be  
BW4  
defined when an address is loaded.  
The SRAM operates from a +2.5V power supply, and all  
inputs and outputs are LVTTL-compatible. The device is  
ideally suited for high bandwidth utilization systems.  
active low chip enable (  
), two additional chip enables for  
CE  
easy depth expansion (CE2,  
), cycle start input  
CE2  
(ADV/  
LD  
enables (  
), synchronous clock enable (  
), byte write  
CEN  
) and read/write (R/ ).  
,
,
,
BW4  
W
BW1 BW2  
BW3  
Asynchronous inputs include the output enable (  
), clock  
OE  
(CLK), SLEEP mode (ZZ, tied LOW if unused) and burst  
mode (MODE). Burst Mode can provide either interleaved or  
linear operation, burst operation can be initiated by  
synchronous address Advance/Load (ADV/  
) pin in Low  
LD  
state. Subsequent burst address can be internally  
generated by the chip and controlled by the same input pin  
ADV/  
in High state.  
LD  
(June, 2007, Version 1.0)  
2
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
Pin Configuration  
512K x 36  
1M x 18  
I/Oc8  
I/Oc0  
NC  
NC  
1
2
3
4
5
6
80  
A10  
NC  
I/Ob8  
I/Ob7  
I/Ob6  
VCCQ  
79  
I/Oc1  
VCCQ  
VSSQ  
I/Oc2  
I/Oc3  
I/Oc4  
NC  
78  
77  
NC  
VCCQ  
VCCQ  
VSSQ  
NC  
76  
75  
74  
VSSQ  
NC  
VSSQ  
I/Ob5  
7
I/Oa0  
I/Ob4  
NC  
I/Ob8  
8
I/Ob3  
I/Oa1  
73  
72  
9
I/Ob7  
I/Oc5  
VSSQ  
VCCQ  
I/Oa2  
I/Ob2  
VSSQ  
VCCQ  
10  
11  
71  
70  
69  
68  
67  
66  
65  
64  
63  
62  
61  
60  
59  
58  
57  
56  
55  
54  
53  
52  
51  
VSSQ  
VCCQ  
VSSQ  
VCCQ  
12  
13  
14  
15  
16  
I/Oa3  
I/Oa4  
VSS  
VCC  
VCC  
I/Ob1  
I/Ob0  
VSS  
VCC  
VCC  
I/Oc6  
I/Oc7  
VCC  
I/Ob6  
I/Ob5  
A67P0618E  
A67P9336E  
VCC  
VCC  
VCC  
VSS  
VCC  
VCC  
VSS  
ZZ  
ZZ  
17  
18  
I/Ob4  
I/Ob3  
VCCQ  
VSSQ  
I/Ob2  
I/Ob1  
I/Ob0  
NC  
I/Od0  
I/Od1  
VCCQ  
VSSQ  
I/Od2  
I/Od3  
I/Od4  
I/Oa5  
I/Oa6  
VCCQ  
I/Oa7  
I/Oa6  
VCCQ  
VSSQ  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
VSSQ  
I/Oa7  
I/Oa8  
NC  
I/Oa5  
I/Oa4  
I/Oa3  
I/Oa2  
NC  
I/Od5  
VSSQ  
VSSQ  
VSSQ  
VSSQ  
VCCQ  
I/Od6  
I/Od7  
I/Od8  
VCCQ  
NC  
VCCQ  
NC  
VCCQ  
I/Oa1  
I/Oa0  
I/Oa8  
NC  
NC  
NC  
NC  
(June, 2007, Version 1.0)  
3
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
Block Diagram (512K X 36)  
ZZ  
MODE  
LOGIC  
MODE  
ADV/LD  
CLK  
CEN  
LOGIC  
CLK  
BURST  
LOGIC  
ADDRESS  
COUNTER  
CLR  
WRITE  
WRITE  
ADDRESS  
REGISTER  
ADDRESS  
REGISTER  
ADDRESS  
REGISTERS  
A0-A18  
9
BYTEa  
WRITE  
DRIVER  
9
9
9
9
9
9
9
BYTEb  
WRITE  
DRIVER  
OUTPUT  
REGISTERS  
&
OUTPUT  
BUFFERS  
512K x 9 x 4  
MEMORY  
ARRAY  
WRITE  
REGISTRY  
&
CONTROL  
LOGIC  
ADV/LD  
R/W  
BW1  
I/Os  
SENSE  
AMPS  
BYTEc  
WRITE  
DRIVER  
BW2  
BW3  
BW4  
BYTEd  
WRITE  
DRIVER  
DATA-IN  
REGISTERS  
DATA-IN  
REGISTERS  
CE  
CHIP  
ENABLE  
LOGIC  
PIPELINED  
ENABLE  
LOGIC  
CE2  
CE2  
OUTPUT  
ENABLE  
LOGIC  
OE  
(June, 2007, Version 1.0)  
4
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
Block Diagram (1M X 18)  
ZZ  
MODE  
LOGIC  
MODE  
ADV/LD  
CLK  
CEN  
BURST  
LOGIC  
LOGIC  
CLK  
ADDRESS  
COUNTER  
CLR  
WRITE  
WRITE  
ADDRESS  
REGISTER  
ADDRESS  
REGISTER  
ADDRESS  
REGISTERS  
A0-A19  
9
9
BYTEa  
WRITE  
DRIVER  
9
9
WRITE  
REGISTRY  
&
CONTROL  
LOGIC  
1M X 9 X 2  
MEMORY  
ARRAY  
OUTPUT  
REGISTERS  
&
OUTPUT  
BUFFERS  
ADV/LD  
R/W  
I/OS  
SENSE  
AMPS  
BYTEb  
WRITE  
DRIVER  
BW1  
BW2  
DATA-IN  
REGISTERS  
DATA-IN  
REGISTERS  
CE  
CHIP  
ENABLE  
LOGIC  
PIPELINED  
ENABLE  
LOGIC  
CE2  
CE2  
OUTPUT  
ENABLE  
LOGIC  
OE  
(June, 2007, Version 1.0)  
5
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
Pin Description  
LQFP (X18)  
Pin No.  
Symbol  
Description  
LQFP (X36)  
37  
36  
37  
36  
A0  
A1  
A2 - A9  
Synchronous Address Inputs : These inputs are registered  
and must meet the setup and hold times around the rising  
edge of CLK. A0 and A1 are the two lest significant bits  
(LSB) of the address field and set the internal burst counter if  
burst is desired.  
35, 34, 33, 32,  
100, 99, 82, 81,  
44, 45, 46, 47,  
48, 49, 50, 83  
84  
35, 34, 33, 32,  
100, 99, 82, 81,  
45, 46, 47, 48,  
49, 50, 83, 84  
A11 - A18  
A19  
A10  
80  
44  
93 (  
94 (  
)
)
93 (  
94 (  
95 (  
)
)
)
Synchronous Byte Write Enables : These active low inputs  
allow individual bytes to be written when a WRITE cycle is  
active and must meet the setup and hold times around the  
rising edge of CLK. BYTE WRITEs need to be asserted on  
the same cycle as the address, BWs are associated with  
BW1  
BW1  
BW2  
BW3  
BW1  
BW2  
BW3  
BW2  
96 (  
)
BW4  
BW4  
addresses and apply to subsequent data.  
controls I/Oa  
BW1  
pins;  
controls I/Ob pins;  
BW3  
controls I/Oc pins;  
BW2  
controls I/Od pins.  
BW4  
89  
89  
Clock: This signal registers the address, data, chip enables,  
byte write enables and burst control inputs on its rising edge.  
All synchronous inputs must meet setup and hold times  
around the clock are rising edge.  
CLK  
98  
92  
98  
92  
CE  
Synchronous Chip Enable : This active low input is used to  
enable the device. This input is sampled only when a new  
external address is loaded (ADV/  
LOW).  
LD  
CE2  
Synchronous Chip Enable : This active low input is used to  
enable the device and is sampled only when a new external  
address is loaded (ADV/ LOW). This input can be used  
LD  
for memory depth expansion.  
97  
97  
CE2  
OE  
Synchronous Chip Enable : This active high input is used to  
enable the device and is sampled only when a new external  
address is loaded (ADV/ LOW). This input can be used  
LD  
for memory depth expansion.  
86  
85  
86  
85  
Output Enable : This active low asynchronous input enables  
the data I/O output drivers.  
ADV/  
Synchronous Address Advance/Load : When HIGH, this  
input is used to advance the internal burst counter,  
controlling burst access after the external address is loaded.  
LD  
When HIGH, R/ is ignored. A LOW on this pin permits a  
W
new address to be loaded at CLK rising edge.  
87  
87  
CEN  
Synchronous Clock Enable : This active low input permits  
CLK to propagate throughout the device. When HIGH, the  
device ignores the CLK input and effectively internally  
extends the previous CLK cycle. This input must meet setup  
and hold times around the rising edge of CLK.  
(June, 2007, Version 1.0)  
6
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
Pin Description (continued)  
Pin No.  
Symbol  
Description  
LQFP (X18)  
LQFP (X36)  
64  
64  
ZZ  
Snooze Enable : This active high asynchronous input causes  
the device to enter a low-power standby mode in which all  
data in the memory array is retained. When active, all other  
inputs are ignored.  
88  
88  
R/  
Read/Write : This active input determines the cycle type  
W
when ADV/  
is LOW. This is the only means for  
LD  
determining READs and WRITEs. READ cycles may not be  
converted into WRITEs (and vice versa) other than by  
loading a new address. A LOW on this pin permits BYTE  
WRITE operations and must meet the setup and hold times  
around the rising edge of CLK. Full bus width WRITEs occur  
if all byte write enables are LOW.  
74, 73, 72, 69, 68,  
63, 62, 59, 58,  
24, 23, 22, 19, 18  
13, 12, 9, 8  
51, 52, 53, 56, 57,  
58, 59, 62, 63  
68, 69, 72, 73, 74,  
75, 78, 79, 80  
1, 2, 3, 6, 7, 8, 9,  
12, 13,  
I/Oa  
I/Ob  
I/Oc  
I/Od  
SRAM Data I/O : Byte “a” is I/Oa pins; Byte “b” is I/Ob pins;  
Byte “c” is I/Oc pins; Byte “d” is I/Od pins. Input data must  
meet setup and hold times around CLK rising edge.  
18, 19, 22, 23, 24,  
25, 28, 29, 30  
31  
31  
MODE  
NC  
Mode : This input selects the burst sequence. A LOW on this  
pin selects linear burst. NC or HIGH on this pin selects  
interleaved burst. Do not alter input state while device is  
operating.  
1, 2, 3, 6, 7, 25, 28,  
29, 30, 38, 39,  
42,43 51, 52, 53,  
56, 57, 75, 78, 79,  
95, 96  
38,39,42,43  
No Connect : These pins can be left floating or connected to  
GND to minimize thermal impedance.  
15, 41, 65, 91  
15, 41, 65, 91  
14, 16, 66  
VCC  
VCC  
Power Supply : See DC Electrical Characteristics and  
Operating Conditions for range.  
14, 16, 66  
These pins do not have to be connected directly to VCC as  
long as the input voltage is VIH. This input is not connected  
to VCC bus internally.  
4, 11, 20, 27,  
54, 61, 70, 77  
4, 11, 20, 27, 54,  
61, 70, 77  
VCCQ  
Isolated Output Buffer Supply : See DC Electrical  
Characteristics and Operating Conditions for range.  
17, 40, 67, 90  
17, 40, 67, 90  
VSS  
Ground : GND.  
5,10,21,26,  
55,60,71,76  
5,10,21,26,  
55,60,71,76  
VSSQ  
Isolated Output Buffer Ground  
(June, 2007, Version 1.0)  
7
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
Truth Table (Notes 5 - 7)  
Address  
Used  
CE2 ZZ ADV/ R/  
LD  
OE  
X
X
X
X
L
CLK  
I/O  
Notes  
CE CE2  
W
BWx  
X
CEN  
L
Operation  
Deselected Cycle,  
Power-down  
None  
H
X
X
X
L
X
H
X
X
L
X
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
L
X
LH High-Z  
LH High-Z  
LH High-Z  
LH High-Z  
Deselected Cycle,  
Power-down  
None  
None  
L
X
X
X
H
X
H
X
L
X
L
Deselected Cycle,  
Power-down  
L
X
L
Continue Deselect  
Cycle  
None  
X
H
X
H
X
H
X
H
X
X
X
H
L
X
L
1
READ Cycle  
(Begin Burst)  
External  
Next  
X
L
LH  
LH  
Q
Q
READ Cycle  
X
L
X
L
H
L
X
L
L
1,7  
2
(Continue Burst)  
NOP/Dummy READ  
(Begin Burst)  
External  
Next  
X
H
H
X
X
X
X
X
X
L
LH High-Z  
LH High-Z  
Dummy READ  
(Continue Burst)  
WRITE Cycle  
(Begin Burst)  
X
L
X
L
H
L
X
L
1,2,7  
3
External  
Next  
L
L
LH  
LH  
D
D
WRITE Cycle  
(Continue Burst)  
NOP/WRITE Abort  
(Begin Burst)  
X
L
X
L
H
L
X
L
L
L
1,3,7  
2,3  
None  
H
H
X
L
LH High-Z  
WRITE Abort  
(Continue Burst)  
IGNORE Clock Edge  
(Stall)  
Next  
X
X
X
X
X
X
H
X
X
X
X
X
L
LH High-Z 1,2,3,7  
Current  
None  
H
X
LH  
-
4
SLEEP Mode  
X
X
High-Z  
Notes:  
1. Continue Burst cycles, whether READ or WRITE, use the same control inputs. The type of cycle performed (READ or  
WRITE) is chosen in the initial Begin Burst cycle. A Continue Deselect cycle can only be entered if a Deselect cycle is  
executed first.  
2. Dummy READ and WRITE Abort cycles can be considered NOPs because the device performs no operation. A WRITE  
Abort means a WRITE command is given, but no operation is performed.  
3. OE may be wired LOW to minimize the number of control signals to the SRAM. The device will automatically turn off the  
output drivers during a WRITE cycle. Some users may use OE when the bus turn-on and turn-off times do not meet their  
requirements.  
4. If an Ignore Clock Edge command occurs during a READ operation, the I/O bus will remain active (Low-Z). If it occurs  
during a WRITE cycle, the bus will remain in High-Z. No WRITE operations will be performed during the Ignored Clock  
Edge cycle.  
5. X means “Don’t Care.” H means logic HIGH. L means logic LOW.  
= H means all byte write signals (  
,
,
BWx  
BW1 BW2  
BW3  
and  
) are HIGH.  
BWx  
= L means one or more byte write signals are LOW.  
BW4  
6.  
enables WRITEs to Byte “a” (I/Oa pins);  
enables WRITEs to Byte “b” (I/Ob pins);  
BW3  
enables WRITEs to  
BW1  
BW2  
Byte “c” (I/Oc pins);  
enables WRITEs to Byte “d” (I/Od pins).  
BW4  
7. The address counter is incremented for all Continue Burst cycles.  
(June, 2007, Version 1.0)  
8
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
Partial Truth Table for READ/WRITE Commands (X18)  
Operation  
R/  
W
BW1  
BW2  
READ  
H
X
X
WRITE Byte “a”  
WRITE Byte “b”  
WRITE all bytes  
WRITE Abort/NOP  
L
L
L
L
L
H
L
H
L
L
H
H
Note : Using and BYTE WRITE(s), any one or more bytes may be written.  
Partial Truth Table for READ/WRITE Commands (X36)  
Operation  
R/  
BW3  
X
W
BW1  
BW2  
BW4  
READ  
H
X
X
X
WRITE Byte “a”  
WRITE Byte “b”  
WRITE Byte “c”  
WRITE Byte “d”  
WRITE all bytes  
WRITE Abort/NOP  
L
L
L
L
L
L
L
H
H
H
L
H
L
H
H
H
H
L
H
H
H
L
L
H
L
L
H
H
H
H
Note : Using R/ and BYTE WRITE(s), any one or more bytes may be written.  
W
Linear Burst Address Table (MODE = LOW)  
First Address (External)  
X . . . X00  
Second Address (Internal)  
X . . . X01  
Third Address (Internal)  
X . . . X10  
Fourth Address (Internal)  
X . . . X11  
X . . . X01  
X . . . X10  
X . . . X11  
X . . . X00  
X . . . X10  
X . . . X11  
X . . . X00  
X . . . X01  
X . . . X11  
X . . . X00  
X . . . X01  
X . . . X10  
Interleaved Burst Address Table (MODE = HIGH or NC)  
First Address (External)  
X . . . X00  
Second Address (Internal)  
X . . . X01  
Third Address (Internal)  
X . . . X10  
Fourth Address (Internal)  
X . . . X11  
X . . . X01  
X . . . X00  
X . . . X11  
X . . . X10  
X . . . X10  
X . . . X11  
X . . . X00  
X . . . X01  
X . . . X11  
X . . . X10  
X . . . X01  
X . . . X00  
(June, 2007, Version 1.0)  
9
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
Absolute Maximum Ratings*  
*Comments  
Power Supply Voltage (VCC) . . . . . . . . . . -0.3V to +3.6V  
Voltage Relative to GND for any Pin Except VCC (Vin,  
Vout) . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC +0.3V  
Commercial Devices ( F ) Operating Temperature (Topr)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C  
Industrial Devices ( I ) Operating Temperature (Topr) . . . .  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25°C to 85°C  
Operating Temperature (Topr) . . . . . . . . . . . 0°C to 70°C  
Storage Temperature (Tbias) . . . . . . . . . . -10°C to 85 °C  
Storage Temperature (Tstg) . . . . . . . . . . -55°C to 125°C  
Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to this device.  
These are stress ratings only. Functional operation of  
this device at these or any other conditions above those  
indicated in the operational sections of this specification  
is not implied or intended. Exposure to the absolute  
maximum rating conditions for extended periods may  
affect device reliability.  
DC Electrical Characteristics and Operating Conditions  
(0°C TA 70°C, -25°C TA 85°C, VCC, VCCQ = +2.5V± 5% unless otherwise noted)  
Symbol  
VIH  
Parameter  
Input High Voltage  
Conditions  
Min.  
1.7  
Max.  
VCC+0.3  
0.7  
Unit  
V
Note  
1,2  
VIL  
Input Low Voltage  
-0.3  
-2.0  
-2.0  
V
1,2  
ILI  
Input Leakage Current  
Output Leakage Current  
0V VIH VCC  
4.0  
μA  
μA  
ILO  
Output(s) disabled,  
4.0  
0V VINVCC  
VOH  
VOL  
Output High Voltage  
Output Low Voltage  
Supply Voltage  
IOH = -1.0mA  
IOL = 1.0mA  
2.0  
V
V
V
V
1,3  
1,3  
1
0.4  
VCC  
VCCQ  
2.375  
2.375  
2.625  
VCC  
Isolated Output Buffer Supply  
1,4  
Capacitance  
Symbol  
CI  
Parameter  
Conditions  
TA = 25°C; f = 1MHz  
VCC = 2.5V  
Typ.  
Max.  
4
Unit  
pF  
Note  
Control Input Capacitance  
Input/Output Capacitance (I/O)  
Address Capacitance  
3
4
3
6
6
6
CO  
5
pF  
CA  
3.5  
pF  
Note : 1. All voltages referenced to VSS (GND).  
2. Overshoot : VIH +3.6V for t tKHKH/2 for I 20mA  
Undershoot : VIL -0.7V for t tKHKH/2 for I 20mA  
Power-up : VIH +2.675V and VCC 2.375V for t 200ms  
3. The load used for VOH, VOL testing is shown in Figure 2. AC load current is higher than the shown DC values.  
AC I/O curves are available upon request.  
4. VCC and VCCQ can be externally wired together to the same power supply.  
5. This parameter is sampled.  
(June, 2007, Version 1.0)  
10  
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
ICC Operating Condition and Maximum Limits  
Max.  
Symbol  
Parameter  
Unit  
Conditions  
-2.6  
-2.8  
-3.2  
-3.5  
-3.8  
-4.2  
Device selected; All inputs VIL  
or VIH; Cycle time tKC (MIN);  
VCC = MAX; Outputs open  
Power Supply  
Current : Operating  
ICC  
460  
440  
410  
80  
360  
330  
310  
mA  
Device deselected; VCC = MAX;  
All inputs VSS+0.2 or VCC-  
0.2; Cycle time tKC (MIN)  
mA  
mA  
ISB  
Standby  
Standby  
80  
80  
80  
80  
80  
Device deselected; VCC = MAX;  
All inputs VIL; or VIH;  
All inputs static;  
ISB1  
120  
120  
120  
120  
120  
120  
CLK frequency=MAX  
ZZ VCC-0.2V  
Device deselected; VCC = MAX;  
All inputs VSS+0.2 or VCC-  
0.2; All inputs static; CLK  
frequency=0  
ISB2  
70  
70  
70  
70  
70  
70  
70  
70  
70  
70  
70  
70  
mA  
mA  
Standby  
ZZ 0.2V  
ISB2Z  
SLEEP Mode  
ZZ VIH  
(June, 2007, Version 1.0)  
11  
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
AC Characteristics (Note 4)  
(0°C TA 70°C, -25°C TA 85°C, VCC = +2.5V± 5%)  
-2.6  
-2.8  
-3.2  
-3.5  
-3.8  
-4.2  
Symbol  
Parameter  
Unit Note  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Clock  
tKHKH  
tKF  
Clock cycle time  
Clock frequency  
Clock HIGH time  
Clock LOW time  
4.0  
-
-
4.4  
-
-
5.0  
-
-
6.0  
-
-
6.7  
-
-
7.5  
-
-
ns  
MH  
ns  
250  
227  
200  
166  
150  
133  
tKHKL  
tKLKH  
1.7  
1.7  
-
-
2.0  
2.0  
-
-
2.0  
2.0  
-
-
2.2  
2.2  
-
-
2.5  
2.5  
-
-
3.0  
3.0  
-
-
ns  
Output Times  
tKHQV  
tKHQX  
tKHQX1  
tKHQZ  
tGLQV  
tGLQX  
tGHQZ  
Clock to output valid  
-
1.5  
1.5  
1.5  
-
2.6  
-
-
1.5  
1.5  
1.5  
-
2.8  
-
-
1.5  
1.5  
1.5  
-
3.2  
-
-
1.5  
1.5  
1.5  
-
3.5  
-
-
1.5  
1.5  
1.5  
-
3.8  
-
-
1.5  
1.5  
1.5  
-
4.2  
-
ns  
ns  
Clock to output invalid  
Clock to output in Low-Z  
Clock to output in High-Z  
OE to output valid  
-
-
-
-
-
-
ns  
ns  
ns  
ns  
ns  
1,2,3  
1,2,3  
4
2.6  
2.6  
-
2.8  
2.8  
-
3.0  
3.2  
-
3.0  
3.5  
-
3.0  
3.8  
-
3.5  
4.2  
-
0
0
0
0
0
0
1,2,3  
1,2,3  
OE to output in Low-Z  
OE to output in High-Z  
-
2.6  
-
2.8  
-
3.0  
-
3.0  
-
3.0  
-
3.5  
Setup Times  
tAVKH  
Address  
1.2  
1.2  
1.2  
1.2  
-
-
-
-
1.4  
1.4  
1.4  
1.4  
-
-
-
-
1.4  
1.4  
1.4  
1.4  
-
-
-
-
1.5  
1.5  
1.5  
1.5  
-
-
-
-
1.5  
1.5  
1.5  
1.5  
-
-
-
-
1.5  
1.5  
1.5  
1.5  
-
-
-
-
ns  
ns  
ns  
ns  
5
5
5
5
Clock enable (  
)
CEN  
tEVKH  
tCVKH  
Control signals  
Data-in  
tDVKH  
Hold Times  
tKHAX  
Address  
0.3  
0.3  
0.3  
0.3  
-
-
-
-
0.4  
0.4  
0.4  
0.4  
-
-
-
-
0.4  
0.4  
0.4  
0.4  
-
-
-
-
0.5  
0.5  
0.5  
0.5  
-
-
-
-
0.5  
0.5  
0.5  
0.5  
-
-
-
-
0.5  
0.5  
0.5  
0.5  
-
-
-
-
ns  
ns  
ns  
ns  
5
5
5
5
Clock enable (  
)
CEN  
tKHEX  
tKHCX  
Control signals  
Data-in  
tKHDX  
Notes: 1. This parameter is sampled.  
2. Output loading is specified with C1=5pF as in Figure 2.  
3. Transition is measured ±200mV from steady state voltage.  
4. OE can be considered a “Don’t Care” during WRITE; however, controlling OE can help fine-tune a system for  
turnaround timing.  
5. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of  
CLK when ADV/  
is LOW and chip enabled. All other synchronous inputs meet the setup and hold times with  
LD  
stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be valid at each  
rising edge of CLK (when ADV/ is LOW) to remain enabled.  
LD  
(June, 2007, Version 1.0)  
12  
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
AC Test Conditions  
Input Pulse Levels  
GND to 2.5V  
1.0ns  
Input Rise and Fall Times  
Input Timing Reference Levels  
Output Reference Levels  
Output Load  
1.25V  
1.25V  
See Figures 1 and 2  
+2.5V  
1667Ω  
Q
Q
ZO=50Ω  
50Ω  
5pF  
1538Ω  
VT=1.25V  
Figure 1  
Figure 2  
Output Load Equivalent  
Output Load Equivalent  
(June, 2007, Version 1.0)  
13  
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
SLEEP Mode  
SLEEP Mode is a low current “Power-down” mode in which  
the device is deselected and current is reduced to ISB2Z. This  
duration of SLEEP Mode is dictated by the length of time the  
ZZ is in a HIGH state. After entering SLEEP Mode, all inputs  
except ZZ become disabled and all outputs go to High-Z.  
The ZZ pin is asynchronous, active high input that causes the  
device to enter SLEEP Mode. When the ZZ pin becomes  
logic HIGH, ISB2Z is guaranteed after the time tZZI is met.  
Any operation pending when entering SLEEP Mode is not  
guaranteed to successfully complete. Therefore, SLEEP  
Mode (READ or WRITE) must not be initiated until valid  
pending operations are completed. Similarly, when exiting  
SLEEP Mode during tRZZ, only a DESELECT or READ cycle  
should be given while the SRAM is transitioning out of  
SLEEP Mode.  
SLEEP Mode Electrical Characteristics  
(VCC, VCCQ = +2.5V±5%)  
Symbol  
ISB2Z  
tZZ  
Parameter  
Conditions  
Min.  
Max.  
70  
Unit  
mA  
ns  
Note  
Current during SLEEP Mode  
ZZ active to input ignored  
ZZ inactive to input sampled  
ZZ active to snooze current  
ZZ inactive to exit snooze current  
ZZ VIH  
-
0
0
-
2(tKHKH)  
2(tKHKH)  
2(tKHKH)  
1
1
1
1
tRZZ  
ns  
tZZI  
ns  
tRZZI  
0
ns  
Note : 1. This parameter is sampled.  
SLEEP Mode Waveform  
CLK  
t
ZZ  
t
RZZ  
ZZ  
t
ZZI  
I
SUPPLY  
IISB2Z  
tRZZI  
ALL INPUTS  
(except ZZ)  
DESELECT or READ Only  
Output  
(Q)  
High-Z  
: Don't Care  
(June, 2007, Version 1.0)  
14  
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
READ/WRITE Timing  
1
2
3
4
5
6
7
8
9
10  
t
KHKH  
CLK  
t
KHKL  
t
EVKH  
t
KHEX  
tKLKH  
CEN  
t
CVKH  
tKHCX  
CE  
ADV/  
LD  
R/W  
BWx  
ADDRESS  
A2  
A3  
A4  
t
A5  
A6  
A7  
A1  
t
AVKH  
tKHAX  
t
KHQV  
KHQX1  
t
KHQX  
t
GLQV  
t
KHQZ  
t
DVKH  
tKHDX  
Q(A4+1)  
I/O  
D(A1)  
D(A2)  
D(A2+1)  
Q(A3)  
Q(A4)  
D(A5)  
Q(A6)  
t
KHQX  
t
GHQZ  
t
GLQX  
OE  
COMMAND  
BURST  
WRITE  
D(A2+1)  
BURST  
READ  
Q(A4+1)  
READ  
Q(A4)  
WRITE  
D(A1)  
WRITE  
D(A2)  
READ  
Q(A3)  
WRITE  
D(A5)  
READ  
Q(A6)  
WRITE  
D(A7)  
DESELECT  
: Don't Care  
: Undefined  
Note : 1. For this waveform, ZZ is tied LOW.  
2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BRST operations are optional.  
3. represents three signals. When = 0, it represents = 0, = 0, CE2 = 1.  
CE  
CE  
CE  
CE2  
4. Data coherency is provided for all possible operations. If a READ is initiated the most current data is used. The  
most recent data may be from the input data register.  
(June, 2007, Version 1.0)  
15  
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
NOP, STALL and Deselect Cycles  
1
2
3
4
5
6
7
8
9
10  
CLK  
CEN  
CE  
ADV/  
LD  
R/W  
BWx  
ADDRESS  
I/O  
A1  
A2  
A3  
A4  
A5  
t
KHQZ  
D(A1)  
Q(A2)  
Q(A3)  
D(A4)  
Q(A5)  
tKHQX  
COMMAND  
WRITE  
D(A4)  
CONTINUE  
DESELECT  
WRITE  
D(A1)  
READ  
Q(A2)  
READ  
Q(A3)  
READ  
Q(A5)  
STALL  
STALL  
NOP  
DESELECT  
: Don't Care  
: Undefined  
Note : 1. The IGNORE CLOCK EDGE or STALL cycle (clock 3) illustrates  
being used to create a “pause.” A WRITE is  
= 0, CE2 = 1.  
CEN  
CE2  
not performed during this cycle.  
2. For this waveform, ZZ and  
are tied LOW.  
OE  
represents three signals. When  
3.  
= 0, it represents  
= 0,  
CE  
CE  
CE  
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The  
most recent data may be from the input data register.  
(June, 2007, Version 1.0)  
16  
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
Ordering Information  
Part No.  
Configure  
Cycle Time / Access Time  
Package  
A67P0618E-4.2IF  
A67P0618E-4.2F  
A67P0618E-3.8IF  
A67P0618E-3.8F  
A67P0618E-3.5IF  
A67P0618E-3.5F  
A67P0618E-3.2IF  
A67P0618E-3.2F  
A67P0618E-2.8IF  
A67P0618E-2.8F  
A67P0618E-2.6IF  
A67P0618E-2.6F  
A67P9336E-4.2IF  
A67P9336E-4.2F  
A67P9336E-3.8IF  
A67P9336E-3.8F  
A67P9336E-3.5IF  
A67P9336E-3.5F  
A67P9336E-3.2IF  
A67P9336E-3.2F  
A67P9336E-2.8IF  
A67P9336E-2.8F  
A67P9336E-2.6IF  
A67P9336E-2.6F  
7.5ns / 4.2ns  
7.5ns / 4.2ns  
6.7ns / 3.8ns  
6.7ns / 3.8ns  
6.0ns / 3.5ns  
6.0ns / 3.5ns  
5.0ns / 3.2ns  
5.0ns / 3.2ns  
4.4ns / 2.8ns  
4.4ns / 2.8ns  
4.0ns / 2.6ns  
4.0ns / 2.6ns  
7.5ns / 4.2ns  
7.5ns / 4.2ns  
6.7ns / 3.8ns  
6.7ns / 3.8ns  
6.0ns / 3.5ns  
6.0ns / 3.5ns  
5.0ns / 3.2ns  
5.0ns / 3.2ns  
4.4ns / 2.8ns  
4.4ns / 2.8ns  
4.0ns / 2.6ns  
4.0ns / 2.6ns  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
100L Pb-Free LQFP  
1M X 18  
512K X 36  
Note: -I is for industrial operating temperature range -25ºC to +85ºC.  
(June, 2007, Version 1.0)  
17  
AMIC Technology, Corp.  
A67P0618/A67P9336 Series  
Package Information  
LQFP 100L Outline Dimensions  
unit: inches/mm  
H
E
A
2
A1  
E
y
80  
51  
81  
50  
31  
100  
1
30  
b
c
e
θ
Dimensions in inches  
Dimensions in mm  
Symbol  
Min.  
0.002  
0.053  
0.009  
0.004  
Nom.  
-
Max.  
Min.  
0.05  
1.35  
0.22  
0.09  
Nom.  
-
Max.  
0.15  
1.45  
0.38  
0.20  
A1  
A2  
b
0.006  
0.057  
0.015  
0.008  
0.055  
1.40  
0.012  
0.30  
c
-
-
HE  
E
0.866 BSC  
0.787 BSC  
0.630 BSC  
0.551 BSC  
0.026 BSC  
0.024  
22.00 BSC  
20.00 BSC  
16.00 BSC  
14.00 BSC  
0.65 BSC  
0.60  
HD  
D
e
L
0.018  
0.030  
0.45  
0.75  
L1  
y
0.039 REF  
-
1.00 REF  
-
-
0.004  
-
0.10  
θ
0°  
3.5°  
7°  
0°  
3.5°  
7°  
Notes:  
1. Dimensions D and E do not include mold protrusion.  
2. Dimensions b does not include dambar protrusion.  
Total in excess of the b dimension at maximum material condition.  
Dambar cannot be located on the lower radius of the foot.  
(June, 2007, Version 1.0)  
18  
AMIC Technology, Corp.  

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