A62S6316G-70SIF [AMICC]
Standard SRAM, 64KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MINI BGA-48;型号: | A62S6316G-70SIF |
厂家: | AMIC TECHNOLOGY |
描述: | Standard SRAM, 64KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MINI BGA-48 静态存储器 内存集成电路 |
文件: | 总14页 (文件大小:187K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
A62S6316 Series
64K X 16 BIT LOW VOLTAGE CMOS SRAM
Document Title
64K X 16 BIT LOW VOLTAGE CMOS SRAM
Revision History
Rev. No. History
Issue Date
Remark
0.0
0.1
Initial issue
October 8, 1998
February 12, 1999
Preliminary
Change access times from 70/100 ns to 55/70 ns(max.)
Change dynamic operating current from 80/70mA to 40mA
Modify TSOP 44L (Type II) package outline drawing
Modify truth table
0.2
0.3
0.4
June 9, 1999
Change dynamic operating current from 40mA to 50mA(max.)
Modify TSOP 44L (Type II) package outline drawing and
Dimensions
June 21, 1999
November 9, 1999
0.5
Add mini BGA package outline dimensions symbol E2 min. and
max.
August 12, 2002
1.0
1.1
Final version release
July 11, 2003
Final
Add Pb-Free package type
August 9, 2004
(August, 2004, Version 1.1)
AMIC Technology, Corp.
A62S6316 Series
64K X 16 BIT LOW VOLTAGE CMOS SRAM
Features
General Description
Operating voltage: 2.7V to 3.3V
Access times: 55/70 ns (max.)
Current:
The A62S6316 is a low operating current 1,048,576-bit
static random access memory organized as 65,536
words by 16 bits and operates on low power supply
voltage from 2.7V to 3.3V. It is built using AMIC’s high
performance CMOS process.
Inputs and three-state outputs are TTL compatible and
allow for direct interfacing with common system bus
structures.
The chip enable input is provided for POWER-DOWN,
device enable. Two byte enable inputs and an output
enable input are included for easy interfacing.
Data retention is guaranteed at a power supply voltage
as low as 2V.
A62S6316-S series:
Operating: 50mA (max.)
Standby: 15µA (max.)
Operating: 50mA (max.)
Standby: 30µA (max.)
A62S6316-SI series:
Extended operating temperature range : -25°C to
85°C for -SI series
Full static operation, no clock or refreshing required
All inputs and outputs are directly TTL-compatible
Common I/O using three-state output
Data retention voltage: 2V (min.)
Available in 44-pin TSOP and 48-ball Mini BGA
(6X8) packages.
Pin Configuration
TSOP (Type II)
Mini BGA (6X8) Top View
1
2
3
4
5
6
A4
A3
A2
A1
A0
CE
1
2
3
4
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A
B
C
D
E
F
A0
A1
A2
NC
LB
OE
HB
A7
OE
I/O8
A3
A5
A4
A6
I/O0
I/O2
VCC
VSS
I/O6
I/O7
NC
CS
5
HB
6
LB
I/O9
VSS
VCC
I/O14
I/O15
NC
I/O10
I/O1
I/O
I/O
I/O
I/O
0
1
2
3
7
I/O15
I/O14
I/O13
I/O12
GND
VCC
I/O11
I/O10
8
I/O11
I/O12
I/O13
NC
NC
NC
A14
A12
A9
A7
I/O3
I/O4
I/O5
9
10
11
12
13
14
15
16
17
18
19
20
21
22
NC
A15
A13
A10
VCC
GND
I/O
I/O
I/O
I/O
4
5
6
7
G
H
I/O
I/O
9
WE
8
A8
A11
WE
A15
A14
A13
A12
NC
NC
A8
A9
A62S6316G
A10
A11
NC
(August, 2004, Version 1.1)
2
AMIC Technology, Corp.
A62S6316 Series
Block Diagram
VCC
GND
A0
512 X 2048
DECODER
MEMORY ARRAY
A14
A15
I/O
0
I/O8
COLUMN I/O
INPUT
DATA
INPUT
DATA
CIRCUIT
CIRCUIT
I/O15
I/O
7
CE
LB
HB
CONTROL
CIRCUIT
OE
WE
(August, 2004, Version 1.1)
1
AMIC Technology, Corp.
A62S6316 Series
Pin Description - TSOP
Pin No.
Symbol
A0 - A15
CE
Description
1 - 5, 18 - 21,
24 - 27,42 - 44
Address Inputs
6
Chip Enable Input
Data Input/Outputs
7 - 10, 13 - 16,
29 - 32, 35 - 38
I/O0 - I/O15
17
Write Enable Input
WE
LB
39
40
41
Byte Enable Input (I/O0 to I/O7)
Byte Enable Input (I/O8 to I/O15)
Output Enable Input
HB
OE
VCC
GND
NC
11, 33
12, 34
Power
Ground
22 , 23, 28
No Connection
Recommended DC Operating Conditions
(TA = 0°C to + 70°C or -25°C to 85°C)
Symbol
VCC
GND
VIH
Parameter
Supply Voltage
Min.
2.7
0
Typ.
Max.
Unit
V
3.0
3.3
Ground
0
-
0
V
Input High Voltage
Input Low Voltage
Output Load
2.2
-0.3
-
VCC + 0.3
V
VIL
-
+0.6
30
1
V
CL
-
pF
-
TTL
Output Load
-
-
(August, 2004, Version 1.1)
2
AMIC Technology, Corp.
A62S6316 Series
Absolute Maximum Ratings*
*Comments
VCC to GND . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.6V
IN, IN/OUT Volt to GND . . . . . . . . -0.5V to VCC + 0.5V
Operating Temperature, Topr . . . . . . . . -25°C to +85°C
Storage Temperature, Tstg . . . . . . . . . -55°C to +125°C
Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . 0.7W
Soldering Temp. & Time . . . . . . . . . . . . 260°C, 10 sec
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of this
device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied or intended.
Exposure to the absolute
maximum rating conditions for extended periods may affect
device reliability.
DC Electrical Characteristics (TA = 0°C to + 70°C or -25°C to 85°C, VCC = 2.7V to 3.3V, GND = 0V)
A62S6316-55S/70S A62S6316-55SI/70SI
Symbol
Parameter
Unit
Conditions
Min.
Max.
Min.
Max.
Input Leakage Current
Output Leakage Current
-
1
-
1
VIN = GND to VCC
⏐ILI⏐
µA
µA
CE = VIH or LB = VIH or
HB = VIH or OE = VIH or
-
1
-
1
⏐ILO⏐
WE = VIH
VI/O = GND to VCC
Active Power Supply
Current
CE = VIL, II/O = 0mA
ICC
-
-
5
-
-
5
mA
mA
Min. Cycle, Duty = 100%
ICC1
50
50
CE = VIL, II/O = 0mA
Dynamic Operating
Current
CE = VIL, VIH = VCC,
VIL = 0V, f = 1MHz,
II/O = 0 mA
ICC2
-
20
-
20
mA
ISB
-
-
0.5
15
-
-
0.5
30
mA
CE = VIH
Standby Power
Supply Current
CE ≥ VCC - 0.2V
VIN ≥ 0V
ISB1
µA
VOL
VOH
Output Low Voltage
Output High Voltage
-
0.4
-
-
0.4
-
V
V
IOL = 2.1mA
IOH = -1.0mA
2.2
2.2
(August, 2004, Version 1.1)
3
AMIC Technology, Corp.
A62S6316 Series
Truth Table
I/O0 to I/O7 Mode
I/O8 to I/O15 Mode
VCC Current
CE
OE
WE
LB
X
L
HB
X
L
H
X
X
Not selected
Read
Not selected
Read
ISB1, ISB
ICC1, ICC2, ICC
ICC1, ICC2, ICC
ICC1, ICC2, ICC
ICC1, ICC2, ICC
ICC1, ICC2, ICC
ICC1, ICC2, ICC
ICC1, ICC2, ICC
ICC1, ICC2, ICC
ISB1, ISB
L
L
L
H
L
L
H
L
Read
High - Z
Read
H
L
High - Z
Write
L
Write
X
L
H
L
Write
Not Write/Hi - Z
Write
H
L
Not Write/Hi - Z
High - Z
High - Z
Not selected
X
L
High - Z
High - Z
Not selected
L
H
X
H
X
X
H
X
H
Note: X = H or L
Capacitance (TA = 25°C, f = 1.0MHz)
Symbol
CIN*
Parameter
Min.
Max.
Unit
pF
Conditions
VIN = 0V
Input Capacitance
-
-
6
8
CI/O*
Input/Output Capacitance
pF
VI/O = 0V
* These parameters are sampled and not 100% tested.
(August, 2004, Version 1.1)
4
AMIC Technology, Corp.
A62S6316 Series
AC Characteristics (TA = 0°C to +70°C or -25°C to 85°C, VCC = 2.7V to 3.3V)
A62S6316-55S/SI
A62S6316-70S/SI
Symbol
Parameter
Unit
Min.
Max.
Min.
Max.
Read Cycle
tRC
Read Cycle Time
55
-
-
70
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAA
Address Access Time
55
55
55
30
-
70
70
70
35
-
tACE
tBE
Chip Enable Access Time
-
-
Byte Enable Access Time
-
-
tOE
Output Enable to Output Valid
Chip Enable to Output in Low Z
Byte Enable to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Byte Disable to Output in High Z
Output Disable to Output in High Z
Output Hold from Address Change
-
-
tCLZ
tBLZ
tOLZ
tCHZ
tBHZ
tOHZ
tOH
10
5
5
-
10
5
5
-
-
-
-
-
20
20
20
-
25
25
25
-
-
-
-
-
5
10
Write Cycle
tWC
Write Cycle Time
55
50
50
0
-
-
70
60
60
0
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tCW
Chip Enable to End of Write
Byte Enable to End of Write
Address Setup Time
tBW
-
-
tAS
-
-
tAW
Address Valid to End of Write
Write Pulse Width
50
40
0
-
60
50
0
-
tWP
-
-
tWR
Write Recovery Time
-
-
tWHZ
tDW
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
-
25
-
-
30
-
25
0
30
0
tDH
-
-
tOW
5
-
5
-
Note: tCHZ, tBHZ and tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit condition and are
not referred to output voltage levels.
(August, 2004, Version 1.1)
5
AMIC Technology, Corp.
A62S6316 Series
Timing Waveforms
Read Cycle 1(1, 2, 4)
t
RC
Address
t
AA
t
OH
t
OH
D
OUT
Read Cycle 2(1, 2, 3)
t
RC
Address
t
AA
CE
t
ACE
5
CHZ
t
5
t
CLZ
t
BE
HB, LB
5
BLZ
5
t
t
BHZ
OE
5
t
OE
tOHZ
5
OLZ
t
D
OUT
Notes: 1. WE is high for Read Cycle.
2. Device is continuously enabled CE = VIL, HB = VIL and, or LB = VIL.
3. Address valid prior to or coincident with CE and (HB and, or LB ) transition low.
4. OE = VIL.
5. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested.
(August, 2004, Version 1.1)
6
AMIC Technology, Corp.
A62S6316 Series
Timing Waveforms (continued)
Write Cycle 1
(Write Enable Controlled)
tWC
Address
3
tWR
tAW
tCW
CE
tBW
HB, LB
1
2
tAS
tWP
WE
tDH
tDW
DATA IN
4
tWHZ
tOW
DATA OUT
Write Cycle 2
(Chip Enable Controlled)
tWC
Address
tAW
3
tWR
1
2
tAS
tCW
CE
HB, LB
WE
tBW
tWP
tDH
tDW
DATA IN
4
tWHZ
tOW
DATA OUT
(August, 2004, Version 1.1)
7
AMIC Technology, Corp.
A62S6316 Series
Timing Waveforms (continued)
Write Cycle 3
(Byte Enable Controlled)
t
WC
Address
t
AW
t
CW
CE
3
WR
t
1
2
t
AS
tBW
HB, LB
t
WP
WE
t
DH
t
DW
DATA IN
4
WHZ
t
t
OW
DATA OUT
Notes: 1. tAS is measured from the address valid to the beginning of Write.
2. A Write occurs during the overlap (tWP, tBW) of a low CE , WE and (HB and, or LB ).
3. tWR is measured from the earliest of CE or WE or (HB and, or LB ) going high to the end of the Write cycle.
4. OE level is high or low.
5. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested.
(August, 2004, Version 1.1)
8
AMIC Technology, Corp.
A62S6316 Series
AC Test Conditions
Input Pulse Levels
0V to 2.4V
5 ns
Input Rise And Fall Time
Input and Output Timing Reference Levels
Output Load
1.5V
See Figures 1 and 2
TTL
TTL
C
L
CL
30pF
5pF
* Including scope and jig.
* Including scope and jig.
Figure 1. Output Load
Figure 2. Output Load for tCLZ, tOLZ,
tCHZ, tOHZ, tWHZ, and tOW
Data Retention Characteristics (TA = 0°C to 70°C or -25°C to 85°C)
Symbol
Parameter
Min.
Max.
Unit
Conditions
VDR
VCC for Data Retention
2.0
3.3
V
CE ≥ VCC - 0.2V
ICCDR
S-Version
SI-Version
-
10*
VCC = 2.0V,
CE ≥ VCC - 0.2V
VIN ≥ 0V
Data Retention Current
µA
-
0
20**
tCDR
tR
Chip Disable to Data Retention Time
Operation Recovery Time
-
-
-
ns
ns
TRC
5
See Retention Waveform
tVR
VCC Rise Time from Data Retention
Voltage to Operating Voltage
ms
* A62S6316-55S/70S
** A62S6316-55SI/70SI
ICCDR: max. 3µA at TA = 0°C to + 40°C
ICCDR: max. 3µA at TA = 0°C to + 40°C
(August, 2004, Version 1.1)
9
AMIC Technology, Corp.
A62S6316 Series
Low VCC Data Retention Waveform
DATA RETENTION MODE
VCC
CE
2.7V
2.7V
t
CDR
t
R
VDR ≥ 2V
t
VR
VIH
VIH
CE
≥ VDR - 0.2V
Ordering Information
Part No.
Operating Current
Max. (mA)
Standby Current
Access Time (ns)
Package
Max. (µA)
A62S6316V-55S
A62S6316V-55SF
A62S6316V-55SI
A62S6316V-55SIF
A62S6316G-55S
A62S6316G-55SF
A62S6316G-55SI
A62S6316G-55SIF
A62S6316V-70S
A62S6316V-70SF
A62S6316V-70SI
A62S6316V-70SIF
A62S6316G-70S
A62S6316G-70SF
A62S6316G-70SI
A62S6316G-70SIF
15
15
30
30
15
15
30
30
15
15
30
30
15
15
30
30
44L TSOP
44L Pb-Free TSOP
44L TSOP
44L Pb-Free TSOP
48B Mini BGA
55
50
48B Pb-Free Mini BGA
48B Mini BGA
48B Pb-Free Mini BGA
44L TSOP
44L Pb-Free TSOP
44L TSOP
44L Pb-Free TSOP
48B Mini BGA
70
50
48B Pb-Free Mini BGA
48B Mini BGA
48B Pb-Free Mini BGA
(August, 2004, Version 1.1)
10
AMIC Technology, Corp.
A62S6316 Series
Package Information
TSOP 44L (Type II) Outline Dimensions
unit: inches/mm
44
θ
L
L1
1
D
L
L1
b
e
y
ZD
Dimensions in inches
Dimensions in mm
Symbol
Min
-
Nom
Max
Min
-
Nom
Max
1.20
0.15
1.05
0.45
0.21
18.54
A
A1
A2
b
-
0.047
0.006
0.041
0.018
0.008
0.730
-
0.002
0.037
0.012
0.005
0.720
-
0.05
0.95
0.30
0.12
18.28
-
0.039
1.00
-
-
-
-
c
D
0.725
0.032 REF
0.463
0.400
0.023
0.031 REF
0.031 BSC
-
18.41
0.805 REF
11.76
10.16
0.59
ZD
E
0.455
0.395
0.019
0.471
0.405
0.027
11.56
10.03
0.49
11.96
10.29
0.69
E1
L
L1
e
0.80 REF
0.80 BSC
-
y
-
0.004
5°
-
0.10
5°
0°
-
0°
-
θ
Notes:
1. The maximum value of dimension D includes end flash.
2. Dimension E1 does not include resin fins.
3. Dimension ZD includes end flash.
(August, 2004, Version 1.1)
11
AMIC Technology, Corp.
A62S6316 Series
Package Information
Mini BGA 6X8 (48 BALLS) Outline Dimensions
unit : millimeter(mm)
Bottom View
Pin A1 Index
Top View
Pin A1 Index
6
5
4
3 2 1
A
B
C
D
E
F
G
H
A
B
Diameter D
Solder Ball
B1
D
Symbol
Min
-
Typ
0.75
6.00
3.75
8.00
5.25
0.35
1.10
0.36
0.22
Max
-
A
B
5.90
-
6.10
-
B1
C
7.90
-
8.10
-
C1
D
0.30
1.00
-
0.40
1.20
-
E
E1
E2
0.17
0.27
(August, 2004, Version 1.1)
12
AMIC Technology, Corp.
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