A29L800UG-90U [AMICC]
1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory; 1M ×8位/ 512K ×16位CMOS 3.0伏只,引导扇区闪存型号: | A29L800UG-90U |
厂家: | AMIC TECHNOLOGY |
描述: | 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory |
文件: | 总41页 (文件大小:397K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
A29L800 Series
1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only,
Boot Sector Flash Memory
Preliminary
Features
nSingle power supply operation
nTypical 100,000 program/erase cycles per sector
- Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
nAccess times:
- 70/90 (max.)
nCurrent:
n20-year data retention at 125°C
- Reliable operation for the life of the system
nCompatible with JEDEC-standards
- Pinout and software compatible with single-power-
supply Flash memory standard
- 9 mA typical active read current
- Superior inadvertent write protection
- 20 mA typical program/erase current
- 200 nA typical CMOS standby
- 200 nA Automatic Sleep Mode current
nFlexible sector architecture
n
Polling and toggle bits
- Provides a software method of detecting completion
of program or erase operations
Data
nReady /
pin (RY /
)
BY
BUSY
- 16 Kbyte/ 8 KbyteX2/ 32 Kbyte/ 64 KbyteX15 sectors
- 8 Kword/ 4 KwordX2/ 16 Kword/ 32 KwordX15 sectors
- Any combination of sectors can be erased
- Supports full chip erase
- Provides a hardware method of detecting completion
of program or erase operations (not available on 44-
pin SOP)
nErase Suspend/Erase Resume
- Sector protection:
- Suspends a sector erase operation to read data from,
or program data to, a non-erasing sector, then
resumes the erase operation
A hardware method of protecting sectors to prevent
any inadvertent program or erase operations within
that sector. Temporary Sector Unprotect feature
allows code changes in previously locked sectors
nExtended operating temperature range: -45°C ~ +85°C
for -U series
nHardware reset pin (
)
RESET
- Hardware method to reset the device to reading array
data
nUnlock Bypass Program Command
-Reduces overall programming time when issuing
multiple program command sequence
nTop or bottom boot block configurations available
nEmbedded Algorithms
nPackage options
- 44-pin SOP or 48-pin TSOP (I) or 48-ball TFBGA
- Embedded Erase algorithm will automatically erase
the entire chip or any combination of designated
sectors and verify the erased sectors
- Embedded Program algorithm automatically writes
and verifies data at specified addresses
PRELIMINARY
(September, 2002, Version 0.2)
1
AMIC Technology, Inc.
A29L800 Series
Device erasure occurs by executing the proper erase
command sequence. This initiates the Embedded Erase
General Description
The A29L800 is an 8Mbit, 3.0 volt-only Flash memory
organized as 1,048,576 bytes of 8 bits or 524,288 words of
16 bits each. The 8 bits of data appear on I/O0 - I/O7; the 16
bits of data appear on I/O0~I/O15. The A29L800 is offered in
48-ball TFBGA, 44-pin SOP and 48-Pin TSOP packages.
This device is designed to be programmed in-system with the
standard system 3.0 volt VCC supply. Additional 12.0 volt
VPP is not required for in-system write or erase operations.
However, the A29L800 can also be programmed in standard
EPROM programmers.
The A29L800 has the first toggle bit, I/O6, which indicates
whether an Embedded Program or Erase is in progress, or it
is in the Erase Suspend. Besides the I/O6 toggle bit, the
A29L800 has a second toggle bit, I/O2, to indicate whether
the addressed sector is being selected for erase. The
A29L800 also offers the ability to program in the Erase
Suspend mode. The standard A29L800 offers access times
of 70 and 90ns, allowing high-speed microprocessors to
operate without wait states. To eliminate bus contention the
algorithm
-
an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper erase margin. The Unlock Bypass mode
facilitates faster programming times by requiring only two
write cycles to program data instead of four.
The host system can detect whether a program or erase
operation is complete by observing the RY /
pin, or by
BY
reading the I/O7 (
Polling) and I/O6 (toggle) status bits.
Data
After a program or erase cycle has been completed, the
device is ready to read array data or accept another
command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data
contents of other sectors. The A29L800 is fully erased when
shipped from the factory.
The hardware sector protection feature disables operations
for both program and erase in any combination of the
sectors of memory. This can be achieved via programming
equipment.
The Erase Suspend/Erase Resume feature enables the user
to put erase on hold for any period of time to read data from,
or program data to, any other sector that is not selected for
erasure. True background erase can thus be achieved.
device has separate chip enable (
), write enable (
)
WE
CE
and output enable (
) controls.
OE
The device requires only a single 3.0 volt power supply for
both read and write functions. Internally generated and
regulated voltages are provided for the program and erase
operations.
The A29L800 is entirely software command set compatible
with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register contents
serve as input to an internal state-machine that controls the
erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and
erase operations. Reading data out of the device is similar to
reading from other Flash or EPROM devices.
Device programming occurs by writing the proper program
command sequence. This initiates the Embedded Program
algorithm - an internal algorithm that automatically times the
program pulse widths and verifies proper program margin.
The hardware
pin terminates any operation in
RESET
progress and resets the internal state machine to reading
array data. The pin may be tied to the system reset
RESET
circuitry. A system reset would thus also reset the device,
enabling the system microprocessor to read the boot-up
firmware from the Flash memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of time,
the device enters the automatic sleep mode. The system can
also place the device into the standby mode. Power
consumption is greatly reduced in both these modes.
PRELIMINARY
(September, 2002, Version 0.2)
2
AMIC Technology, Inc.
A29L800 Series
Pin Configurations
nSOP
nTSOP (I)
1
RESET
RY/BY
A18
44
43
42
2
3
4
5
6
WE
A8
A17
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
NC
NC
RY/BY
A18
A17
A7
A6
1
2
3
4
5
6
7
8
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
A16
BYTE
VSS
I/O15 (A-1)
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
A7
A6
A5
A9
41
40
39
A10
A11
A4
A3
A2
A1
A0
A12
7
8
38
A13
A14
A15
37
36
35
34
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
9
10
11
A29L800V
A16
CE
12
13
14
15
16
17
18
19
20
21
33
32
31
30
29
28
27
26
25
24
BYTE
VSS
VSS
I/O9
OE
I/O0
I/O8
I/O1
I/O9
I/O2
I/O15 (A-1)
I/O7
I/O1
I/O8
I/O0
OE
VSS
A5
A4
A3
A2
A1
29
28
27
26
25
I/O14
I/O6
CE
A0
I/O13
I/O5
I/O12
I/O4
I/O10
I/O3
VCC
I/O11
23
22
nTFBGA
TFBGA
Top View, Balls Facing Down
A6
B6
C6
D6
E6
F6
G6
H6
A13
A12
A14
A15
A16
BYTE
I/O15(A-1) VSS
G5
A5
B5
C5
D5
E5
F5
H5
A9
A8
A10
A11
I/O7
I/O14
I/O13
I/O6
A4
B4
C4
D4
E4
F4
G4
H4
WE
RESET
NC
NC
I/O5
I/O12
VCC
I/O4
A3
B3
C3
D3
E3
F3
G3
H3
RY/BY
NC
A18
NC
I/O2
I/O10
I/O11
I/O3
A2
B2
C2
D2
E2
F2
G2
H2
A7
A17
A6
A5
I/O0
I/O8
I/O9
I/O1
A1
B1
C1
D1
E1
F1
G1
H1
A3
A4
A2
A1
A0
CE
OE
VSS
PRELIMINARY
(September, 2002, Version 0.2)
3
AMIC Technology, Inc.
A29L800 Series
Block Diagram
RY/BY
I/O0 - I/O15 (A-1)
VCC
VSS
Sector Switches
Input/Output
Buffers
Erase Voltage
Generator
RESET
State
Control
WE
BYTE
PGM Voltage
Generator
Command
Register
Chip Enable
Output Enable
Logic
STB
Data Latch
CE
OE
Y-Decoder
Y-Gating
STB
VCC Detector
Timer
A0-A18
X-decoder
Cell Matrix
Pin Descriptions
Pin No.
Description
A0 - A18
Address Inputs
I/O0 - I/O14
Data Inputs/Outputs
Data Input/Output, Word Mode
LSB Address Input, Byte Mode
Chip Enable
I/O15
I/O15 (A-1)
A-1
CE
WE
Write Enable
Output Enable
OE
Hardware Reset
RESET
BYTE
Selects Byte Mode or Word Mode
RY/
Ready/
- Output
BUSY
BY
VSS
Ground
VCC
NC
Power Supply
Pin not connected internally
PRELIMINARY
(September, 2002, Version 0.2)
4
AMIC Technology, Inc.
A29L800 Series
Absolute Maximum Ratings*
*Comments
Storage Temperature Plastic Packages . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0°C to + 70°C
. . . . . . . . . . . . . . . . . . . . . . for -U series: -45°C to +85°C
Ambient Temperature with Power Applied . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to + 70°C
. . . . . . . . . . . . . . . . . . . . . . for -U series: -45°C to +85°C
Voltage with Respect to Ground
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of
this device at these or any other conditions above
those indicated in the operational sections of these
specification is not implied or intended. Exposure to
the absolute maximum rating conditions for extended
periods may affect device reliability.
VCC (Note 1) . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.0V
A9,
&
(Note 2) . . . . . . . . . . . . -0.5 to +12.5V
OE RESET
Operating Ranges
All other pins (Note 1) . . . . . . . . . . . . -0.5V to VCC + 0.5V
Output Short Circuit Current (Note 3) . . . . . . . . . 200mA
Commercial (C) Devices
Ambient Temperature (TA) . . . . . . . . . . . . . . 0°C to +70°C
Notes:
Extended Range Devices
1. Minimum DC voltage on input or I/O pins is -0.5V. During
voltage transitions, input or I/O pins may undershoot
VSS to -2.0V for periods of up to 20ns. Maximum DC
voltage on input and I/O pins is VCC +0.5V. During
voltage transitions, input or I/O pins may overshoot to
VCC +2.0V for periods up to 20ns.
Ambient Temperature (TA) . . . . . . . . . . . . -45°C to +85°C
VCC Supply Voltages
VCC for all devices . . . . . . . . . . . . . . . . . . +2.7V to +3.6V
Operating ranges define those limits between which the
functionally of the device is guaranteed.
2. Minimum DC input voltage on A9,
and
is
OE
RESET
-0.5V. During voltage transitions, A9,
and
OE
RESET
may overshoot VSS to -2.0V for periods of up to 20ns.
Maximum DC input voltage on A9 is +12.5V which may
overshoot to 14.0V for periods up to 20ns.
3. No more than one output is shorted at a time. Duration
of the short circuit should not be greater than one
second.
Device Bus Operations
execute the command. The contents of the register serve
as inputs to the internal state machine. The state machine
outputs dictate the function of the device. The appropriate
device bus operations table lists the inputs and control
levels required, and the resulting output. The following
subsections describe each of these operations in further
detail.
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself
does not occupy any addressable memory location. The
register is composed of latches that store the commands,
along with the address and data information needed to
Table 1. A29L800 Device Bus Operations
Operation
Read
Write
CMOS Standby
Output Disable
Hardware Reset
Sector Protect
(See Note 2)
Sector Unprotect
(See Note 2)
A0 – A18
(Note 1)
I/O0 - I/O7
I/O8 - I/O15
=VIH
WE
CE
OE
RESET
=VIL
BYTE
BYTE
L
L
L
H
X
H
X
H
L
X
H
X
H
H
AIN
AIN
X
X
X
DOUT
DIN
High-Z
High-Z
High-Z
DOUT
I/O8~I/O4=High-Z
I/O15=A-1
DIN
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
VCC ± 0.3 V
VCC ± 0.3 V
L
X
H
L
Sector Address,
A6=L, A1=H, A0=L
Sector Address,
A6=H, A1=H, A0=L
L
L
X
H
H
X
L
L
X
VID
VID
VID
DIN
DIN
DIN
X
X
X
X
X
Temporary Sector
Unprotect
AIN
DIN
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5V, X = Don't Care, DIN = Data In, DOUT = Data Out, AIN = Address In
Notes:
1. Addresses are A18:A0 in word mode (
2. See the “Sector Protection/Unprotection” section and Temporary Sector Unprotect for more information.
=VIH), A18: A in byte mode (
=VIL).
BYTE
BYTE
-1
PRELIMINARY
(September, 2002, Version 0.2)
5
AMIC Technology, Inc.
A29L800 Series
select a sector. See the "Command Definitions" section for
Word/Byte Configuration
The
details on erasing
a sector or the entire chip, or
pin determines whether the I/O pins I/O15-I/O0
suspending/resuming the erase operation.
BYTE
After the system writes the autoselect command sequence,
the device enters the autoselect mode. The system can
then read autoselect codes from the internal register (which
is separate from the memory array) on I/O7 - I/O0. Standard
read cycle timings apply in this mode. Refer to the
"Autoselect Mode" and "Autoselect Command Sequence"
sections for more information.
ICC2 in the DC Characteristics table represents the active
current specification for the write mode. The "AC
Characteristics" section contains timing specification tables
and timing diagrams for write operations.
operate in the byte or word configuration. If the
pin
BYTE
is set at logic ”1”, the device is in word configuration, I/O15-
I/O0 are active and controlled by and
.
OE
CE
If the
pin is set at logic “0”, the device is in byte
BYTE
configuration, and only I/O0-I/O7 are active and controlled
by and . I/O8-I/O14 are tri-stated, and I/O15 pin is
CE
OE
used as an input for the LSB(A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must drive
Program and Erase Operation Status
the
and
pins to VIL.
is the power control and
CE
OE
CE
During an erase or program operation, the system may
check the status of the operation by reading the status bits
on I/O7 - I/O0. Standard read cycle timings and ICC read
specifications apply. Refer to "Write Operation Status" for
more information, and to each AC Characteristics section
for timing diagrams.
selects the device.
is the output control and gates
OE
array data to the output pins.
should remain at VIH all
WE
the time during read operation. The
pin determines
BYTE
whether the device outputs array data in words and bytes.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory content
occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid addresses on
the device address inputs produce valid data on the device
data outputs. The device remains enabled for read access
until the command register contents are altered.
Standby Mode
When the system is not reading or writing to the device, it
can place the device in the standby mode. In this mode,
current consumption is greatly reduced, and the outputs are
placed in the high impedance state, independent of the
input.
OE
See "Reading Array Data" for more information. Refer to the
AC Read Operations table for timing specifications and to
the Read Operations Timings diagram for the timing
waveforms, lCC1 in the DC Characteristics table represents
the active current specification for reading array data.
The device enters the CMOS standby mode when the
CE
&
pins are both held at VCC ± 0.3V. (Note that this
RESET
is a more restricted voltage range than VIH.) If
and
CE
are held at VIH, but not within VCC ± 0.3V, the
RESET
device will be in the standby mode, but the standby current
will be greater. The device requires the standard access
time (tCE) before it is ready to read data.
If the device is deselected during erasure or programming,
the device draws active current until the operation is
completed.
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive
and
to
WE
CE
ICC3 and ICC4 in the DC Characteristics tables represent the
standby current specification.
VIL, and
to VIH. For program operations, the
pin
BYTE
OE
determines whether the device accepts program data in
bytes or words, Refer to “Word/Byte Configuration” for more
information. The device features an Unlock Bypass mode to
facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to
program a word or byte, instead of four. The “
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy
consumption. The device automatically enables this mode
when addresses remain stable for tACC +30ns. The
Word / Byte Program Command Sequence” section has
details on programming data to the device using both
standard and Unlock Bypass command sequence. An
erase operation can erase one sector, multiple sectors, or
the entire device. The Sector Address Tables indicate the
address range that each sector occupies. A "sector
address" consists of the address inputs required to uniquely
automatic sleep mode is independent of the
,
and
CE WE
control signals. Standard address access timings
OE
provide new data when addresses are changed. While in
sleep mode, output data is latched and always available to
the system. ICC4 in the DC Characteristics table represents
the automatic sleep mode current specification.
PRELIMINARY
(September, 2002, Version 0.2)
6
AMIC Technology, Inc.
A29L800 Series
Output Disable Mode
When the
disabled. The output pins are placed in the high impedance
state.
The
pin may be tied to the system reset circuitry. A
RESET
system reset would thus also reset the Flash memory,
enabling the system to read the boot-up firmware from the
Flash memory.
input is at VIH, output from the device is
OE
If
is asserted during a program or erase operation,
RESET
the RY/
pin remains a “0” (busy) until the internal reset
BY
: Hardware Reset Pin
RESET
operation is complete, which requires a time tREADY (during
The
pin provides a hardware method of resetting
Embedded Algorithms). The system can thus monitor
RESET
the device to reading array data. When the system drives
the pin low for at least a period of tRP, the device
RY/
BY
complete. If
to determine whether the reset operation is
RESET
is asserted when a program or erase
RESET
immediately terminates any operation in progress, tristates
all data output pins, and ignores all read/write attempts for
the duration of the
operation is not executing (RY/
operation is completed within a time of tREADY (not during
Embedded Algorithms). The system can read data tRH after
pin is “1”), the reset
BY
pulse. The device also resets
RESET
the internal state machine to reading array data. The
operation that was interrupted should be reinitiated once
the device is ready to accept another command sequence,
to ensure data integrity.
the
pin return to VIH.
RESET
Refer to the AC Characteristics tables for
parameters and diagram.
RESET
Current is reduced for the duration of the
pulse.
RESET
When
is held at VSS ± 0.3V, the device draws
RESET
CMOS standby current (ICC4 ). If
is held at VIL but
RESET
not within VSS ± 0.3V, the standby current will be greater.
PRELIMINARY
(September, 2002, Version 0.2)
7
AMIC Technology, Inc.
A29L800 Series
Table 2. A29L800 Top Boot Block Sector Address Table
Sector Size
(Kbytes/
Kwords)
Address Range (in hexadecimal)
Byte Mode
Word Mode
(x16)
Sector
A18
A17
A16
A15
A14
A13
A12
(x 8)
SA0
SA1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
1
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
32/16
8/4
00000h - 0FFFFh 00000h - 07FFFh
10000h - 1FFFFh 08000h - 0FFFFh
20000h - 2FFFFh 10000h - 17FFFh
30000h - 3FFFFh 18000h - 1FFFFh
40000h - 4FFFFh 20000h - 27FFFh
50000h - 5FFFFh 28000h - 2FFFFh
60000h - 6FFFFh 30000h - 37FFFh
70000h - 7FFFFh 38000h - 3FFFFh
80000h - 8FFFFh 40000h - 47FFFh
90000h - 9FFFFh 48000h - 4FFFFh
A0000h - AFFFFh 50000h - 57FFFh
B0000h - BFFFFh 58000h - 5FFFFh
C0000h - CFFFFh 60000h - 67FFFh
D0000h - DFFFFh 68000h - 6FFFFh
E0000h - EFFFFh 70000h - 77FFFh
F0000h - F7FFFh 78000h - 7BFFFh
F8000h - F9FFFh 7C000h - 7CFFFh
FA000h - FBFFFh 7D000h - 7DFFFh
FC000h - FFFFFh 7E000h - 7FFFFh
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
1
1
0
1
8/4
1
1
X
16/8
Note:
Address range is A18 : A-1 in byte mode and A18 : A0 in word mode. See “Word/Byte Configuration” section.
PRELIMINARY
(September, 2002, Version 0.2)
8
AMIC Technology, Inc.
A29L800 Series
Table 3. A29L800 Bottom Boot Block Sector Address Table
Sector Size
(Kbytes/
Kwords)
Address Range (in hexadecimal)
Byte Mode
Word Mode
(x16)
Sector
A18
A17
A16
A15
A14
A13
A12
(x 8)
SA0
SA1
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
0
0
1
X
0
16/8
8/4
00000h - 03FFFh
04000h - 05FFFh
06000h - 07FFFh
08000h - 0FFFFh
10000h - 1FFFFh
20000h – 2FFFFh
30000h - 3FFFFh
40000h - 4FFFFh
50000h - 5FFFFh
60000h - 6FFFFh
70000h - 7FFFFh
80000h - 8FFFFh
90000h - 9FFFFh
A0000h - AFFFFh
B0000h - BFFFFh
C0000h - CFFFFh
D0000h - DFFFFh
E0000h - EFFFFh
F0000h - FFFFFh
00000 - 01FFF
02000 - 02FFF
03000 - 03FFF
04000 - 07FFF
08000 - 0FFFF
10000 - 17FFF
18000 - 1FFFF
20000 - 27FFF
28000 - 2FFFF
30000 - 37FFF
38000 - 3FFFF
40000 - 47FFF
48000 - 4FFFF
50000 - 57FFF
58000 - 5FFFF
60000 - 67FFF
68000 - 6FFFF
70000 - 77FFF
78000 - 7FFFF
SA2
0
1
1
8/4
SA3
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
32/16
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
SA4
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
Note:
Address range is A18 : A-1 in byte mode and A18 : A0 in word mode. See “Word/Byte Configuration” section.
PRELIMINARY
(September, 2002, Version 0.2)
9
AMIC Technology, Inc.
A29L800 Series
Autoselect Mode
verifying sector protection, the sector address must appear
on the appropriate highest order address bits. Refer to the
corresponding Sector Address Tables. The Command
Definitions table shows the remaining address bits that are
don't care. When all necessary bits have been set as
required, the programming equipment may then read the
corresponding identifier code on I/O7 - I/O0.To access the
autoselect codes in-system, the host system can issue the
autoselect command via the command register, as shown
in the Command Definitions table. This method does not
require VID. See "Command Definitions" for details on
using the autoselect mode.
The autoselect mode provides manufacturer and device
identification, and sector protection verification, through
identifier codes output on I/O7 - I/O0. This mode is primarily
intended for programming equipment to automatically
match a device to be programmed with its corresponding
programming algorithm. However, the autoselect codes
can also be accessed in-system through the command
register.
When using programming equipment, the autoselect mode
requires VID (11.5V to 12.5 V) on address pin A9. Address
pins A6, A1, and A0 must be as shown in Autoselect
Codes (High Voltage Method) table. In addition, when
Table 4. A29L800 Autoselect Codes (High Voltage Method)
Description
Mode
A18 A11 A9 A8 A6 A5 A1 A0
I/O8
to
I/O7
to
WE
CE OE
to
to
to
A7
X
to
A2
X
A12 A10
I/O15
X
I/O0
37h
1Ah
Manufacturer ID: AMIC
Device ID:
L
L
L
L
H
H
X
X
X
X
VID
VID
L
L
L
L
L
Word
Byte
B3h
A29L800
X
X
H
X
B3h
X
1Ah
9Bh
9Bh
(Top Boot Block)
Device ID:
Word
Byte
A29L800
L
L
L
L
H
H
X
X
X
X
VID
VID
X
X
L
L
X
X
L
H
H
(Bottom Boot Block)
Continuation ID
H
X
X
X
7Fh
01h
(protected)
Sector Protection Verification
L
L
H
SA
X
VID
X
L
X
H
L
00h
(unprotected)
L=Logic Low= VIL, H=Logic High=VIH, SA=Sector Address, X=Don’t Care.
Note: The autoselect codes may also be accessed in-system via command sequences.
PRELIMINARY
(September, 2002, Version 0.2)
10
AMIC Technology, Inc.
A29L800 Series
Sector Protection/Unprotection
Temporary Sector Unprotect
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware
sector unprotection feature re-enables both program and
erase operations in previously protected sectors.
It is possible to determine whether a sector is protected or
unprotected. See “Autoselect Mode” for details.
This feature allows temporary unprotection of previous
protected sectors to change data in-system. The Sector
Unprotect mode is activated by setting the
pin to VID.
RESET
During this mode, formerly protected sectors can be
programmed or erased by selecting the sector addresses.
Once VID is removed from the
pin, all the previously
RESET
Sector protection / unprotection can be implemented via two
methods. The primary method requires VID on the
protected sectors are protected again. Figure 1 shows the
algorithm, and the Temporary Sector Unprotect diagram
shows the timing waveforms, for this feature.
pin only, and can be implemented either in-system or
RESET
via programming equipment. Figure 2 shows the algorithm
and the Sector Protect / Unprotect Timing Diagram illustrates
the timing waveforms for this feature. This method uses
standard microprocessor bus cycle timing. For sector
unprotect, all unprotected sectors must first be protected
prior to the first sector unprotect write cycle. The alternate
method must be implemented using programming
equipment. The procedure requires a high voltage (VID) on
address pin A9 and the control pins.
START
RESET = VID
(Note 1)
The device is shipped with all sectors unprotected.
It is possible to determine whether a sector is protected or
unprotected. See "Autoselect Mode" for details.
Perform Erase or
Program Operations
Hardware Data Protection
The requirement of command unlocking sequence for
programming or erasing provides data protection against
inadvertent writes (refer to the Command Definitions table).
In addition, the following hardware data protection measures
prevent accidental erasure or programming, which might
otherwise be caused by spurious system level signals during
VCC power-up transitions, or from system noise. The device is
powered up to read array data to avoid accidentally writing
data to the array.
RESET = VIH
Temporary Sector
Unprotect
Write Pulse "Glitch" Protection
Completed (Note 2)
Noise pulses of less than 5ns (typical) on
do not initiate a write cycle.
,
or
OE CE
WE
Notes:
Logical Inhibit
1. All protected sectors unprotected.
2. All previously protected sectors are protected once again.
Write cycles are inhibited by holding any one of
=VIL,
OE
CE
= VIH or
= VIH. To initiate a write cycle,
and
CE
WE
Figure 1. Temporary Sector Unprotect Operation
must be a logical zero while
is a logical one.
OE
WE
Power-Up Write Inhibit
If
=
= VIL and
= VIH during power up, the
OE
WE
device does not accept commands on the rising edge of
. The internal state machine is automatically reset to
CE
WE
reading array data on the initial power-up.
PRELIMINARY
(September, 2002, Version 0.2)
11
AMIC Technology, Inc.
A29L800 Series
START
START
Protect all sectors:
The indicated portion of
the sector protect
PLSCNT=1
PLSCNT=1
algorithm must be
performed for all
RESET=V ID
Wait 1 us
RESET=V ID
Wait 1 us
unprotected sectors prior
to issuing the first sector
unprotect address
No
No
No
Temporary Sector
Unprotect Mode
First Write
Cycle=60h?
First Write
Cycle=60h?
Temporary Sector
Unprotect Mode
Yes
Yes
Set up sector
address
All sectors
protected?
Sector Protect
Write 60h to sector
address with A6=0,
A1=1, A0=0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with A6=1,
A1=1, A0=0
Wait 150 us
Verify Sector
Protect: Write 40h
to sector address
with A6=0, A1=1,
A0=0
Reset
PLSCNT=1
Increment
PLSCNT
Wait 15 ms
Verify Sector
Unprotect : Write
40h to sector
address with A6=1,
A1=1, A0=0
Read from
sector address
with A6=0,
Increment
PLSCNT
A1=1, A0=0
No
Read from sector
address with A6=1,
A1=1, A0=0
No
PLSCNT
=25?
Data=01h?
Yes
No
Set up
next sector
address
Yes
No
PLSCNT=
1000?
Yes
Data=00h?
Yes
Protect another
sector?
Device failed
Yes
No
Remove V ID
from RESET
No
Last sector
verified?
Device failed
Write reset
command
Yes
Remove V ID
from RESET
Sector Protect
complete
Sector Protect
Algorithm
Sector Unprotect
Algorithm
Write reset
Command
Sector Unprotect
complete
Figure 2. In-System Sector Protect/Unprotect Algorithms
PRELIMINARY
(September, 2002, Version 0.2)
12
AMIC Technology, Inc.
A29L800 Series
Command Definitions
Autoselect Command Sequence
Writing specific address and data commands or sequences
into the command register initiates device operations. The
Command Definitions table defines the valid register
command sequences. Writing incorrect address and data
values or writing them in the improper sequence resets the
device to reading array data.
The autoselect command sequence allows the host system to
access the manufacturer and devices codes, and determine
whether or not a sector is protected. The Command Definitions
table shows the address and data requirements. This method
is an alternative to that shown in the Autoselect Codes (High
Voltage Method) table, which is intended for PROM
programmers and requires VID on address bit A9.
The autoselect command sequence is initiated by writing two
unlock cycles, followed by the autoselect command. The
device then enters the autoselect mode, and the system may
read at any address any number of times, without initiating
another command sequence.
All addresses are latched on the falling edge of
or
,
CE
WE
whichever happens later. All data is latched on the rising edge
of or , whichever happens first. Refer to the
WE
CE
appropriate timing diagrams in the "AC Characteristics"
section.
A read cycle at address XX00h retrieves the manufacturer
code and another read cycle at XX03h retrieves the
continuation code. A read cycle at address XX01h returns the
device code. A read cycle containing a sector address (SA)
and the address 02h in returns 01h if that sector is protected,
or 00h if it is unprotected. Refer to the Sector Address tables
for valid sector addresses.
Reading Array Data
The device is automatically set to reading array data after
device power-up. No commands are required to retrieve data.
The device is also ready to read array data after completing
an Embedded Program or Embedded Erase algorithm. After
the device accepts an Erase Suspend command, the device
enters the Erase Suspend mode. The system can read array
data using the standard read timings, except that if it reads at
an address within erase-suspended sectors, the device
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Word/Byte Program Command Sequence
outputs status data. After completing
a programming
operation in the Erase Suspend mode, the system may once
again read array data with the same exception. See "Erase
Suspend/Erase Resume Commands" for more information on
this mode.
The system must issue the reset command to re-enable the
device for reading array data if I/O5 goes high, or while in the
autoselect mode. See the "Reset Command" section, next.
See also "Requirements for Reading Array Data" in the
"Device Bus Operations" section for more information. The
Read Operations table provides the read parameters, and
Read Operation Timings diagram shows the timing diagram.
The system may program the device by word or byte,
depending on the state of the
pin. Programming is a
BYTE
four-bus-cycle operation. The program command sequence is
initiated by writing two unlock write cycles, followed by the
program set-up command. The program address and data are
written next, which in turn initiate the Embedded Program
algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verify the
programmed cell margin. Table 5 shows the address and data
requirements for the byte program command sequence.
When the Embedded Program algorithm is complete, the
device then returns to reading array data and addresses are
longer latched. The system can determine the status of the
Reset Command
Writing the reset command to the device resets the device to
reading array data. Address bits are don't care for this
command. The reset command may be written between the
sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array data.
Once erasure begins, however, the device ignores reset
commands until the operation is complete.
The reset command may be written between the sequence
cycles in a program command sequence before programming
begins. This resets the device to reading array data (also
applies to programming in Erase Suspend mode). Once
programming begins, however, the device ignores reset
commands until the operation is complete.
program operation by using I/O7, I/O6, or RY/
. See “White
BY
Operation Status” for information on these status bits.
Any commands written to the device during the Embedded
Program Algorithm are ignored. Note that a hardware reset
immediately terminates the programming operation. The Byte
Program command sequence should be reinitiated once the
device has reset to reading array data, to ensure data integrity.
Programming is allowed in any sequence and across sector
boundaries. A bit cannot be programmed from a “0” back to a
“1”. Attempting to do so may halt the operation and set I/O5 to
“1”, or cause the
Polling algorithm to indicate the
Data
operation was successful. However, a succeeding read will
show that the data is still “0”. Only erase operations can
convert a “0” to a “1”.
The reset command may be written between the sequence
cycles in an autoselect command sequence. Once in the
autoselect mode, the reset command must be written to
return to reading array data (also applies to autoselect during
Erase Suspend).
If I/O5 goes high during a program or erase operation, writing
the reset command returns the device to reading array data
(also applies during Erase Suspend).
PRELIMINARY
(September, 2002, Version 0.2)
13
AMIC Technology, Inc.
A29L800 Series
During the unlock bypass mode, only the Unlock Bypass
Program and Unlock Bypass Reset commands are valid. To
exit the unlock bypass mode, the system must issue the two-
cycle unlock bypass reset command sequence. The first cycle
must contain the data 90h; the second cycle the data 00h.
Addresses are don’t care for both cycle. The device returns to
reading array data.
Figure 3 illustrates the algorithm for the program operation.
See the Erase/Program Operations in “AC Characteristics” for
parameters, and to Program Operation Timings for timing
diagrams.
START
Write Program
Command
Sequence
Data Poll
from System
Chip Erase Command Sequence
Embedded
Program
algorithm in
progress
Chip erase is a six-bus-cycle operation. The chip erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the chip erase command, which in
turn invokes the Embedded Erase algorithm. The device does
not require the system to preprogram prior to erase. The
Embedded Erase algorithm automatically preprograms and
verifies the entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any
controls or timings during these operations. The Command
Definitions table shows the address and data requirements for
the chip erase command sequence.
Verify Data ?
Yes
No
Any commands written to the chip during the Embedded
Erase algorithm are ignored. The system can determine the
status of the erase operation by using I/O7, I/O6, or I/O2. See
"Write Operation Status" for information on these status bits.
When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer
latched.
Figure 4 illustrates the algorithm for the erase operation. See
the Erase/Program Operations tables in "AC Characteristics"
for parameters, and to the Chip/Sector Erase Operation
Timings for timing waveforms.
Increment Address
Last Address ?
Yes
Programming
Completed
Note : See the appropriate Command Definitions table for
program command sequence.
Sector Erase Command Sequence
Sector erase is a six-bus-cycle operation. The sector erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the address of the sector to be
erased, and the sector erase command. The Command
Definitions table shows the address and data requirements for
the sector erase command sequence.
The device does not require the system to preprogram the
memory prior to erase. The Embedded Erase algorithm
automatically programs and verifies the sector for an all zero
data pattern prior to electrical erase. The system is not
required to provide any controls or timings during these
operations.
After the command sequence is written, a sector erase time-
out of 50ms begins. During the time-out period, additional
sector addresses and sector erase commands may be written.
Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one sector
to all sectors. The time between these additional cycles must
be less than 50ms, otherwise the last address and command
might not be accepted, and erasure may begin. It is
recommended that processor interrupts be disabled during
this time to ensure all commands are accepted. The interrupts
Figure 3. Program Operation
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program
bytes or words to the device faster than using the standard
program command sequence. The unlock bypass command
sequence is initiated by first writing two unlock cycles. This is
followed by a third write cycle containing the unlock bypass
command, 20h. The device then enters the unlock bypass
mode.
A two-cycle unlock bypass program command
sequence is all that is required to program in this mode. The
first cycle in this sequence contains the unlock bypass
program command, A0h; the second cycle contains the
program address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial two
unlock cycles required in the standard program command
sequence, resulting in faster total programming time. Table 5
shows the requirements for the command sequence.
PRELIMINARY
(September, 2002, Version 0.2)
14
AMIC Technology, Inc.
A29L800 Series
can be re-enabled after the last Sector Erase command is
written. If the time between additional sector erase commands
can be assumed to be less than 50ms, the system need not
monitor I/O3. Any command other than Sector Erase or Erase
Suspend during the time-out period resets the device to
reading array data. The system must rewrite the command
sequence and any additional sector addresses and
commands.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend mode.
The device allows reading autoselect codes even at
addresses within erasing sectors, since the codes are not
stored in the memory array. When the device exits the
autoselect mode, the device reverts to the Erase Suspend
mode, and is ready for another valid operation. See
"Autoselect Command Sequence" for more information.
The system must write the Erase Resume command (address
bits are "don't care") to exit the erase suspend mode and
continue the sector erase operation. Further writes of the
Resume command are ignored. Another Erase Suspend
command can be written after the device has resumed
erasing.
The system can monitor I/O3 to determine if the sector erase
timer has timed out. (See the " I/O3: Sector Erase Timer"
section.) The time-out begins from the rising edge of the final
pulse in the command sequence.
WE
Once the sector erase operation has begun, only the Erase
Suspend command is valid. All other commands are ignored.
When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer
latched. The system can determine the status of the erase
operation by using I/O7, I/O6, or I/O2. Refer to "Write
Operation Status" for information on these status bits.
START
4 illustrates the algorithm for the erase operation. Refer to the
Erase/Program Operations tables in the "AC Characteristics"
section for parameters, and to the Sector Erase Operations
Timing diagram for timing waveforms.
Write Erase
Command
Sequence
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt
a sector erase operation and then read data from, or program
data to, any sector not selected for erasure. This command is
valid only during the sector erase operation, including the
50ms time-out period during the sector erase command
sequence. The Erase Suspend command is ignored if written
during the chip erase operation or Embedded Program
algorithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the time-out
period and suspends the erase operation. Addresses are
"don't cares" when writing the Erase Suspend command.
When the Erase Suspend command is written during a sector
erase operation, the device requires a maximum of 20ms to
suspend the erase operation. However, when the Erase
Suspend command is written during the sector erase time-
out, the device immediately terminates the time-out period
and suspends the erase operation.
Data Poll
from System
Embedded
Erase
algorithm in
progress
No
Data = FFh ?
Yes
Erasure Completed
After the erase operation has been suspended, the system
can read array data from or program data to any sector not
selected for erasure. (The device "erase suspends" all sectors
selected for erasure.) Normal read and write timings and
command definitions apply. Reading at any address within
erase-suspended sectors produces status data on I/O7 - I/O0.
The system can use I/O7, or I/O6 and I/O2 together, to
determine if a sector is actively erasing or is erase-
suspended. See "Write Operation Status" for information on
these status bits.
Note :
1. See the appropriate Command Definitions table for erase
command sequences.
2. See "I/O3 : Sector Erase Timer" for more information.
Figure 4. Erase Operation
After an erase-suspended program operation is complete, the
system can once again read array data within non-suspended
sectors. The system can determine the status of the program
operation using the I/O7 or I/O6 status bits, just as in the
standard program operation. See "Write Operation Status" for
more information.
PRELIMINARY
(September, 2002, Version 0.2)
15
AMIC Technology, Inc.
A29L800 Series
Table 5. A29L800 Command Definitions
Bus Cycles (Notes 2 - 5)
Third Fourth
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
RA RD
Command
Sequence
(Note 1)
First
Second
Fifth
Sixth
Read (Note 6)
Reset (Note 7)
1
1
XXX F0
555
Word
Byte
2AA
555
2AA
555
AAA
555
Manufacturer ID
4
4
AA
55
55
90 X00
37
AAA
Word
Byte
B31A
1A
555
AA
AAA
X01
90
Device ID,
Top Boot Block
555
2AA
555
AAA
555
X02
Word
Byte
B39B
9B
555
90
X01
X02
X03
Device ID,
Bottom Boot Block
AA
AA
55
4
4
AAA
AAA
Word
Byte
555
AAA
555
2AA
555
2AA
555
AAA
555
Continuation ID
55
90
7F
X06
XX00
(SA)
X02
Word
Sector Protect Verify
(Note 9)
XX01
00
4
4
AA
55
55
90
(SA)
X04
Byte
AAA
555
555
AAA
555
01
Word
Byte
2AA
Program
Unlock Bypass
AA
AA
A0
20
PA
PD
AAA
555
AAA
555
2AA
555
AAA
555
AAA
Word
Byte
3
2
2
55
PD
00
Unlock Bypass Program (Note 10)
XXX A0
XXX 90
555
PA
Unlock Bypass Reset (Note 11)
Word
XXX
2AA
555
2AA
555
555
AAA
555
555
AAA
555
AAA
2AA
555
2AA
555
555
Chip Erase
6
6
AA
55
55
80
80
AA
AA
55
55
10
30
Byte
AAA
AAA
Word
555
Sector Erase
AA
SA
Byte
AAA
AAA
Erase Suspend (Note 12)
Erase Resume (Note 13)
1
1
XXX B0
XXX 30
Legend:
X = Don't care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the
whichever happens later.
or
pulse,
CE
WE
PD = Data to be programmed at location PA. Data latches on the rising edge of
or
pulse, whichever happens first.
CE
WE
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A18 - A12 select a unique sector.
PRELIMINARY
(September, 2002, Version 0.2)
16
AMIC Technology, Inc.
A29L800 Series
Note:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles are write operation.
4. Data bits I/O15~I/O8 are don’t care for unlock and command cycles.
5. Address bits A18 - A11 are don't cares for unlock and command cycles, unless SA or PA required.
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when device is in the autoselect mode, or if I/O5 goes high
(while the device is providing status data).
8. The fourth cycle of the autoselect command sequence is a read cycle.
9. The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more
information.
10. The Unlock Bypass command is required prior to the Unlock Bypass Program command.
11. The Unlock Bypass Reset command is required to return to reading array data when the device is in the unlock bypass
mode.
12. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode.
13. The Erase Resume command is valid only during the Erase Suspend mode.
PRELIMINARY
(September, 2002, Version 0.2)
17
AMIC Technology, Inc.
A29L800 Series
Write Operation Status
Several bits, I/O2, I/O3, I/O5, I/O6, I/O7, RY/
in the A29L800 to determine the status of a write operation.
Table 6 and the following subsections describe the
are provided
BY
START
functions of these status bits. I/O7, I/O6 and RY/
each
BY
offer a method for determining whether a program or erase
operation is complete or in progress. These three bits are
discussed first.
Read I/O7-I/O0
Address = VA
I/O7:
Polling
Data
The
Polling bit, I/O7, indicates to the host system
Data
Yes
whether an Embedded Algorithm is in progress or
completed, or whether the device is in Erase Suspend.
I/O7 = Data ?
No
Polling is valid after the rising edge of the final
Data
pulse in the program or erase command sequence.
WE
During the Embedded Program algorithm, the device
outputs on I/O7 the complement of the datum programmed
to I/O7. This I/O7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to
I/O7. The system must provide the program address to read
valid status information on I/O7. If a program address falls
No
I/O5 = 1?
Yes
within a protected sector,
Polling on I/O7 is active for
Data
approximately 2ms, then the device returns to reading array
data.
Read I/O7 - I/O0
Address = VA
During the Embedded Erase algorithm,
Polling
Data
produces a "0" on I/O7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase
Suspend mode,
Polling produces a "1" on I/O7.This is
Data
analogous to the complement/true datum output described
for the Embedded Program algorithm: the erase function
changes all the bits in a sector to "1"; prior to this, the
device outputs the "complement," or "0." The system must
provide an address within any of the sectors selected for
erasure to read valid status information on I/O7.
Yes
I/O7 = Data ?
After an erase command sequence is written, if all sectors
No
selected for erasing are protected,
Polling on I/O7 is
Data
active for approximately 100ms, then the device returns to
reading array data. If not all selected sectors are protected,
the Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are
protected.
FAIL
PASS
When the system detects I/O7 has changed from the
complement to true data, it can read valid data at I/O7 - I/O0
on the following read cycles. This is because I/O7 may
change asynchronously with I/O0 - I/O6 while Output Enable
Note :
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. I/O7 should be rechecked even if I/O5 = "1" because
I/O7 may change simultaneously with I/O5.
(
) is asserted low. The
Polling Timings (During
Data
OE
Embedded Algorithms) in the "AC Characteristics" section
illustrates this. Table 6 shows the outputs for Polling
Data
Polling algorithm.
on I/O7. Figure 5 shows the
Data
Figure 5. Data Polling Algorithm
PRELIMINARY
(September, 2002, Version 0.2)
18
AMIC Technology, Inc.
A29L800 Series
I/O2: Toggle Bit II
RY/
: Read/
Busy
BY
The "Toggle Bit II" on I/O2, when used with I/O6, indicates
whether a particular sector is actively erasing (that is, the
Embedded Erase algorithm is in progress), or whether that
sector is erase-suspended. Toggle Bit II is valid after the
The RY/
is a dedicated, open-drain output pin that
BY
indicates whether an Embedded algorithm is in progress or
complete. The RY/ status is valid after the rising edge of
BY
pulse in the command sequence. Since
the final
WE
rising edge of the final
sequence.
pulse in the command
WE
RY/
is an open-drain output, several RY/
pins can be
BY
BY
tied together in parallel with a pull-up resistor to VCC. (The
RY/ pin is not available on the 44-pin SOP package)
I/O2 toggles when the system reads at addresses within
those sectors that have been selected for erasure. (The
BY
If the output is low (Busy), the device is actively erasing or
programming. (This includes programming in the Erase
Suspend mode.) If the output is high (Ready), the device is
ready to read array data (including during the Erase
Suspend mode), or is in the standby mode.
system may use either
or
to control the read
CE
OE
cycles.) But I/O2 cannot distinguish whether the sector is
actively erasing or is erase-suspended. I/O6, by comparison,
indicates whether the device is actively erasing, or is in
Erase Suspend, but cannot distinguish which sectors are
selected for erasure. Thus, both status bits are required for
sector and mode information. Refer to Table 6 to compare
outputs for I/O2 and I/O6.
Figure 6 shows the toggle bit algorithm in flowchart form,
and the section " I/O2: Toggle Bit II" explains the algorithm.
See also the " I/O6: Toggle Bit I" subsection. Refer to the
Toggle Bit Timings figure for the toggle bit timing diagram.
The I/O2 vs. I/O6 figure shows the differences between I/O2
and I/O6 in graphical form.
Table 6 shows the outputs for RY/
. Refer to “
RESET
BY
Timings”, “Timing Waveforms for Program Operation” and
“Timing Waveforms for Chip/Sector Erase Operation” for
more information.
I/O6: Toggle Bit I
Toggle Bit I on I/O6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or
whether the device has entered the Erase Suspend mode.
Toggle Bit I may be read at any address, and is valid after
Reading Toggle Bits I/O6, I/O2
the rising edge of the final
pulse in the command
WE
Refer to Figure 6 for the following discussion. Whenever the
system initially begins reading toggle bit status, it must read
I/O7 - I/O0 at least twice in a row to determine whether a
toggle bit is toggling. Typically, a system would note and
store the value of the toggle bit after the first read. After the
second read, the system would compare the new value of
the toggle bit with the first. If the toggle bit is not toggling,
the device has completed the program or erase operation.
The system can read array data on I/O7 - I/O0 on the
following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system
also should note whether the value of I/O5 is high (see the
section on I/O5). If it is, the system should then determine
again whether the toggle bit is toggling, since the toggle bit
may have stopped toggling just as I/O5 went high. If the
toggle bit is no longer toggling, the device has successfully
completed the program or erase operation. If it is still
toggling, the device did not complete the operation
successfully, and the system must write the reset command
to return to reading array data.
sequence (prior to the program or erase operation), and
during the sector erase time-out.
During an Embedded Program or Erase algorithm operation,
successive read cycles to any address cause I/O6 to toggle.
(The system may use either
or
to control the read
CE
OE
cycles.) When the operation is complete, I/O6 stops toggling.
After an erase command sequence is written, if all sectors
selected for erasing are protected, I/O6 toggles for
approximately 100ms, then returns to reading array data. If
not all selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected.
The system can use I/O6 and I/O2 together to determine
whether a sector is actively erasing or is erase-suspended.
When the device is actively erasing (that is, the Embedded
Erase algorithm is in progress), I/O6 toggles. When the
device enters the Erase Suspend mode, I/O6 stops toggling.
However, the system must also use I/O2 to determine which
sectors are erasing or erase-suspended. Alternatively, the
system can use I/O7 (see the subsection on " I/O7 :
Data
Polling").
The remaining scenario is that the system initially
determines that the toggle bit is toggling and I/O5 has not
gone high. The system may continue to monitor the toggle
bit and I/O5 through successive read cycles, determining the
status as described in the previous paragraph. Alternatively,
it may choose to perform other system tasks. In this case,
the system must start at the beginning of the algorithm when
it returns to determine the status of the operation (top of
Figure 6).
If a program address falls within a protected sector, I/O6
toggles for approximately 2ms after the program command
sequence is written, then returns to reading array data.
I/O6 also toggles during the erase-suspend-program mode,
and stops toggling once the Embedded Program algorithm
is complete.
The Write Operation Status table shows the outputs for
Toggle Bit I on I/O6. Refer to Figure 6 for the toggle bit
algorithm, and to the Toggle Bit Timings figure in the "AC
Characteristics" section for the timing diagram. The I/O2 vs.
I/O6 figure shows the differences between I/O2 and I/O6 in
graphical form. See also the subsection on " I/O2: Toggle Bit
II".
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(September, 2002, Version 0.2)
19
AMIC Technology, Inc.
A29L800 Series
I/O5: Exceeded Timing Limits
I/O5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under these
conditions I/O5 produces a "1." This is a failure condition
that indicates the program or erase cycle was not
successfully completed.
START
The I/O5 failure condition may appear if the system tries to
program a "1 "to a location that is previously programmed to
"0." Only an erase operation can change a "0" back to a "1."
Under this condition, the device halts the operation, and
when the operation has exceeded the timing limits, I/O5
produces a "1."
Read I/O7-I/O0
Read I/O7-I/O0
(Note 1)
No
Under both these conditions, the system must issue the
reset command to return the device to reading array data.
I/O3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read I/O3 to determine whether or not an erase
operation has begun. (The sector erase timer does not
apply to the chip erase command.) If additional sectors are
selected for erasure, the entire time-out also applies after
each additional sector erase command. When the time-out
is complete, I/O3 switches from "0" to "1." The system may
ignore I/O3 if the system can guarantee that the time
between additional sector erase commands will always be
less than 50ms. See also the "Sector Erase Command
Sequence" section.
Toggle Bit
= Toggle ?
Yes
I/O5 = 1?
Yes
No
After the sector erase command sequence is written, the
Read I/O7 - I/O0
system should read the status on I/O7 (
Polling) or
Data
(Notes 1,2)
Twice
I/O6 (Toggle Bit I) to ensure the device has accepted the
command sequence, and then read I/O3. If I/O3 is "1", the
internally controlled erase cycle has begun; all further
commands (other than Erase Suspend) are ignored until
the erase operation is complete. If I/O3 is "0", the device will
accept additional sector erase commands. To ensure the
command has been accepted, the system software should
check the status of I/O3 prior to and following each
subsequent sector erase command. If I/O3 is high on the
second status check, the last command might not have
been accepted. Table 6 shows the outputs for I/O3.
No
Toggle Bit
= Toggle ?
Yes
Program/Erase
Operation Not
Commplete, Write
Reset Command
Program/Erase
Operation Complete
Notes :
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as I/O5
changes to "1". See text.
Figure 6. Toggle Bit Algorithm
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AMIC Technology, Inc.
A29L800 Series
Table 6. Write Operation Status
I/O7
I/O6
I/O5
(Note 2)
0
I/O3
I/O2
RY/
BY
Operation
(Note 1)
(Note 1)
No toggle
Standard
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
Toggle
Toggle
N/A
1
0
I/O7
0
0
0
Toggle
Toggle
0
1
Erase
Reading within Erase
Suspended Sector
1
No toggle
N/A
Suspend
Mode
Reading within Non-Erase
Suspended Sector
Data
I/O7
Data
Data
0
Data
N/A
Data
N/A
1
0
Erase-Suspend-Program
Toggle
Notes:
1. I/O7 and I/O2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
2. I/O5 switches to “1” when an Embedded Program or Embedded Erase operation has exceeded the maximum timing
limits. See “I/O5: Exceeded Timing Limits” for more information.
Maximum Negative Input Overshoot
20ns
20ns
+0.8V
-0.5V
-2.0V
20ns
Maximum Positive Input Overshoot
20ns
VCC+2.0V
VCC+0.5V
2.0V
20ns
20ns
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(September, 2002, Version 0.2)
21
AMIC Technology, Inc.
A29L800 Series
DC Characteristics
CMOS Compatible (TA=0°C to 70°C or -45°C to +85°C)
Parameter
Parameter Description
Test Description
Min.
Typ.
Max.
Unit
Symbol
ILI
Input Load Current
VIN = VSS to VCC. VCC = VCC Max
VCC = VCC Max, A9 =12.5V
±1.0
mA
mA
mA
ILIT
ILO
A9 Input Load Current
Output Leakage Current
35
VOUT = VSS to VCC. VCC = VCC Max
±1.0
5 MHz
9
2
16
= VIL,
= VIH
CE
Byte Mode
OE
OE
1 MHz
5 MHz
1 MHz
4
VCC Active Read Current
(Notes 1, 2)
ICC1
ICC2
mA
mA
9
2
16
4
= VIL,
CE
Word Mode
= VIH
=VIH
VCC Active Write (Program/Erase)
Current (Notes 2, 3, 4)
20
0.2
0.2
30
5
= VIL,
= VIH,
CE
OE
ICC3
ICC4
VCC Standby Current (Note 2)
mA
mA
= VCC ± 0.3V
RESET
CE
VCC Standby Current During Reset
(Note 2)
= VSS ± 0.3V
RESET
5
ICC5
Automatic Sleep Mode
(Note 2, 4, 5)
0.2
5
VIH = VCC ± 0.3V; VIL = VSS ± 0.3V
mA
VIL
VIH
Input Low Level
Input High Level
-0.5
0.8
V
V
0.7 x VCC
VCC + 0.3
Voltage for Autoselect and
Temporary Unprotect Sector
Output Low Voltage
VID
VCC = 3.3 V
11.5
V
12.5
0.45
VOL
VOH1
VOH2
IOL = 4.0mA, VCC = VCC Min
IOH = -2.0 mA, VCC = VCC Min
IOH = -100 mA, VCC = VCC Min
V
V
V
0.85 x VCC
VCC - 0.4
Output High Voltage
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with
at VIH. Typical VCC is 3.0V.
OE
2. Maximum ICC specifications are tested with VCC = VCC max.
3. ICC active while Embedded Algorithm (program or erase) is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30ns. Typical sleep mode
current is 200nA.
5. Not 100% tested.
PRELIMINARY
(September, 2002, Version 0.2)
22
AMIC Technology, Inc.
A29L800 Series
DC Characteristics (continued)
Zero Power Flash
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1MHz
ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
10
8
3.6V
2.7V
6
4
2
0
1
2
3
4
5
Frequency in MHz
Note : T = 25°C
Typical ICC1 vs. Frequency
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AMIC Technology, Inc.
A29L800 Series
AC Characteristics
Read Only Operations (TA=0°C to 70°C or -45°C to +85°C)
Parameter Symbols
Description
Test Setup
Speed
-90
Unit
JEDEC
Std
-70
Read Cycle Time (Note 1)
Address to Output Delay
tAVAV
tRC
Min.
70
90
90
ns
ns
tAVQV
tACC
= VIL
Max.
CE
70
= VIL
OE
Chip Enable to Output Delay
Output Enable to Output Delay
tELQV
tGLQV
tCE
tOE
Max.
Max.
Min.
70
30
0
90
35
0
ns
ns
ns
= VIL
OE
Read
Toggle and
Polling
Output Enable Hold
Time (Note 1)
tOEH
ns
Min.
10
25
10
30
Data
Chip Enable to Output High Z
(Notes 1)
tEHQZ
tGHQZ
tDF
tDF
Max.
ns
ns
Output Enable to Output High Z
(Notes 1)
25
0
30
0
Output Hold Time from Addresses,
or
CE
tAXQX
tOH
Min.
ns
, Whichever Occurs First (Note 1)
OE
Notes:
1. Not 100% tested.
2. See Test Conditions and Test Setup for test specifications.
Timing Waveforms for Read Only Operation
tRC
Addresses
CE
Addresses Stable
tACC
tDF
tOE
OE
tOEH
WE
tCE
tOH
High-Z
High-Z
Output
Output Valid
RESET
RY/BY
0V
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24
AMIC Technology, Inc.
A29L800 Series
AC Characteristics
Hardware Reset (
Parameter
) (TA=0°C to 70°C or -45°C to +85°C)
RESET
Description
Test Setup
All Speed Options
Unit
JEDEC
Std
Pin Low (During Embedded
Algorithms) to Read or Write (See Note)
RESET
tREADY
Max
20
ms
Pin Low (Not During Embedded
RESET
Algorithms) to Read or Write (See Note)
tREADY
Max
500
ns
tRP
tRH
Min
Min
Min
Min
500
50
0
ns
ns
ns
ms
Pulse Width
RESET
RESET
High Time Before Read (See Note)
Recovery Time
tRB
RY/
BY
tRPD
20
Low to Standby Mode
RESET
Note: Not 100% tested.
Timings
RESET
RY/BY
CE, OE
RESET
tRH
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY
tRB
CE, OE
RESET
tRP
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25
AMIC Technology, Inc.
A29L800 Series
Temporary Sector Unprotect (TA=0°C to 70°C or -45°C to +85°C)
Parameter
Description
All Speed Options
Unit
ns
JEDEC
Std
tVIDR
VID Rise and Fall Time (See Note)
Min
Min
500
4
Setup Time for Temporary Sector
RESET
Unprotect
tRSP
ms
Note: Not 100% tested.
Temporary Sector Unprotect Timing Diagram
12V
0 or 3V
0 or 3V
RESET
tVIDR
tVIDR
Program or Erase Command Sequence
CE
WE
tRSP
RY/BY
PRELIMINARY
(September, 2002, Version 0.2)
26
AMIC Technology, Inc.
A29L800 Series
AC Characteristics
Word/Byte Configuration (
Parameter
) (TA=0°C to 70°C or -45°C to +85°C)
BYTE
Description
All Speed Options
Unit
JEDEC
Std
-70
-90
tELFL/tELFH
Max
5
ns
to
CE BYTE
Switching Low or High
Switching Low to Output High-Z
Switching High to Output Active
BYTE
BYTE
tFLQZ
tHQV
Max
Min
25
70
30
90
ns
ns
Timings for Read Operations
BYTE
CE
OE
BYTE
t
ELFL
Data Output
(I/O -I/O14
Data Output
(I/O0-I/O7)
BYTE
Switching
I/O0-I/O14
0
)
from word to
byte mode
I/O15
Output
Address Input
I/O15 (A-1)
t
FLQZ
t
ELFH
BYTE
Data Output
(I/O -I/O
Data Output
(I/O0-I/O14)
I/O0-I/O14
0
7
)
BYTE
Switching
from byte to
word mode
I/O15
Output
Address Input
I/O15 (A-1)
t
FHQV
Timings for Write Operations
BYTE
CE
The falling edge of the last WE signal
WE
BYTE
tSET
(tAS)
tHOLD(tAH)
Note:
Refer to the Erase/Program Operations table for tAS and tAH specifications.
PRELIMINARY
(September, 2002, Version 0.2)
27
AMIC Technology, Inc.
A29L800 Series
AC Characteristics
Erase and Program Operations (TA=0°C to 70°C or -45°C to +85°C)
Parameter
Description
Speed
Unit
JEDEC
Std
tWC
tAS
-70
-90
tAVAV
tAVWL
tWLAX
tDVWH
tWHDX
Write Cycle Time (Note 1)
Min.
Min.
Min.
Min.
Min.
Min.
70
90
ns
ns
ns
ns
ns
ns
Address Setup Time
Address Hold Time
0
tAH
45
35
45
45
tDS
Data Setup Time
Data Hold Time
tDH
0
0
Output Enable Setup Time
Read Recover Time Before Write
tOES
tGHWL
tGHWL
Min.
0
ns
(
high to
low)
WE
OE
tELWL
tWHEH
tWLWH
tWHWL
tCS
tCH
Min.
Min.
Min.
Min.
0
0
ns
ns
ns
ns
Setup Time
Hold Time
CE
CE
tWP
tWPH
Write Pulse Width
35
35
Write Pulse Width High
30
5
Byte
Typ.
Typ.
Byte Programming Operation
(Note 2)
tWHWH1
tWHWH2
tWHWH1
ms
Word
7
tWHWH2
tvcs
Sector Erase Operation (Note 2)
VCC Set Up Time (Note 1)
Typ.
Min.
Min
Min
0.7
50
0
sec
ms
ns
ns
tRB
Recovery Time from RY/
BY
tBUSY
90
Program/Erase Valid to RY/
Delay
BY
Notes:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
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AMIC Technology, Inc.
A29L800 Series
Timing Waveforms for Program Operation
Program Command Sequence (last two cycles)
Read Status Data (last two cycles)
tWC
tAS
Addresses
CE
PA
PA
555h
PA
tAH
tCH
tWP
OE
tWHWH1
WE
tCS
tWPH
tDS
tDH
Data
A0h
PD
DOUT
Status
tRB
tBUSY
RY/BY
VCC
tVCS
Note :
1. PA = program addrss, PD = program data, Dout is the true data at the program address.
2. Illustration shows device in word mode.
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AMIC Technology, Inc.
A29L800 Series
Timing Waveforms for Chip/Sector Erase Operation
Erase Command Sequence (last two cycles)
Read Status Data
tAS
tWC
SA
VA
Addresses
CE
2AAh
VA
555h for chip erase
tAH
OE
tCH
tWP
WE
tWPH
tDH
tWHWH2
tCS
tDS
In
Progress
Data
55h
30h
10h for chip erase
Complete
tRB
tBUSY
RY/BY
tVCS
VCC
Note :
1. SA = Sector Address (for Sector Erase), VA = Valid Address for reading status data (see "Write Operaion Ststus").
2. Illustratin shows device in word mode.
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AMIC Technology, Inc.
A29L800 Series
Timing Waveforms for
Polling (During Embedded Algorithms)
Data
tRC
Addresses
VA
VA
VA
tACC
tCE
CE
tCH
tOE
OE
tDF
tOEH
WE
tOH
High-Z
Valid Data
I/O7
Complement
Complement
Status Data
True
True
High-Z
I/O0 - I/O6
Valid Data
High-Z
Status Data
tBUSY
RY/BY
Note : VA = Valid Address. Illustation shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
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AMIC Technology, Inc.
A29L800 Series
Timing Waveforms for Toggle Bit (During Embedded Algorithms)
tRC
Addresses
CE
VA
VA
VA
VA
tACC
tCE
tCH
tOE
OE
tDF
tOEH
WE
tOH
I/O6 , I/O2
High-Z
Valid Status
(first read)
Valid Status
Valid Status
Valid Data
tBUSY
(second read)
(stop togging)
RY/BY
Note: VA = Valid Address; not required for I/O6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle.
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(September, 2002, Version 0.2)
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AMIC Technology, Inc.
A29L800 Series
Timing Waveforms for Sector Protect/Unprotect
VID
VIH
RESET
SA, A6,
A1, A0
Valid*
Valid*
Valid*
Status
Sector Protect/Unprotect
Verify
40h
60h
60h
Data
CE
Sector Protect:150us
Sector Unprotect:15ms
1us
WE
OE
Note : For sector protect, A6=0, A1=1, A0=0. For sector unprotect, A6=1, A1=1, A0=0
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AMIC Technology, Inc.
A29L800 Series
Timing Waveforms for I/O2 vs. I/O6
Enter
Erase
Enter Erase
Suspend Program
Erase
Resume
Embedded
Suspend
Erasing
WE
Erase
Suspend
Program
Erase
Erase
Erase Suspend
Read
Erase Suspend
Read
Erase
Complete
I/O6
I/O2
I/O2 and I/O6 toggle with OE and CE
Note : Both I/O6 and I/O2 toggle with OE or CE. See the text on I/O6 and I/O2 in the section "Write Operation Status" for
more information.
AC Characteristics
Erase and Program Operations
Alternate
Controlled Writes (TA=0°C to 70°C or -45°C to +85°C)
CE
Parameter
Description
Speed
Unit
JEDEC
Std
tWC
tAS
-70
-90
tAVAV
tAVEL
tELAX
tDVEH
tEHDX
Write Cycle Time (Note 1)
Min.
Min.
Min.
Min.
Min.
Min.
70
90
ns
ns
ns
ns
ns
ns
Address Setup Time
Address Hold Time
0
tAH
45
35
45
45
tDS
Data Setup Time
tDH
Data Hold Time
0
0
tOES
Output Enable Setup Time
Read Recover Time Before Write
tGHEL
tGHEL
Min.
0
ns
(
High to
Low)
WE
OE
tWLEL
tEHWH
tWS
tWH
Min.
Min.
0
0
ns
ns
Setup Time
WE
Hold Time
WE
CE
CE
tELEH
tEHEL
tCP
Min.
Min.
35
35
ns
ns
Pulse Width
tCPH
30
5
Pulse Width High
Byte
Typ.
Typ.
Programming Operation
(Note 2)
tWHWH1
tWHWH1
ms
Word
7
tWHWH2
tWHWH2
sec
Sector Erase Operation (Note 2)
Typ.
0.7
Notes:
3. Not 100% tested.
4. See the "Erase and Programming Performance" section for more information.
PRELIMINARY
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AMIC Technology, Inc.
A29L800 Series
Timing Waveforms for Alternate
Controlled Write Operation
CE
PA for program
SA for sector erase
555 for chip erase
555 for program
2AA for erase
Data Polling
PA
Addresses
tWC
tAS
tAH
tWH
WE
OE
tWHWH1 or 2
tCP
tBUSY
tCPH
tDH
CE
tWS
tDS
Data
I/O7
DOUT
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
RESET
RY/BY
Note :
1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O 7 = Complement of Data Input, DOUT = Array Data.
2. Figure indicates the last two bus cycles of the command sequence.
Erase and Programming Performance
Parameter
Sector Erase Time
Typ. (Note 1)
Max. (Note 2)
Unit
sec
sec
ms
Comments
1.0
35
35
12
11
8
Excludes 00h programming
prior to erasure
Chip Erase Time
Byte Programming Time
Word Programming Time
300
500
33
ms
Excludes system-level
overhead (Note 5)
Byte Mode
Word Mode
sec
Chip Programming Time
(Note 3)
7.2
21.6
sec
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0V VCC, 10,000 cycles. Additionally,
programming typically assumes checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only
then does the device set I/O5 = 1. See the section on I/O5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See
Table 5 for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 10,000 cycles.
PRELIMINARY
(September, 2002, Version 0.2)
35
AMIC Technology, Inc.
A29L800 Series
Latch-up Characteristics
Description
Min.
Max.
VCC+1.0V
+100 mA
12.5V
Input Voltage with respect to VSS on all I/O pins
VCC Current
-1.0V
-100 mA
-1.0V
Input voltage with respect to VSS on all pins except I/O pins
(including A9,
and
)
RESET
OE
Includes all pins except VCC. Test conditions: VCC = 5.0V, one pin at time.
TSOP and SOP Pin Capacitance
Parameter Symbol
Parameter Description
Input Capacitance
Test Setup
VIN=0
Typ.
6
Max.
7.5
12
Unit
pF
CIN
COUT
CIN2
Output Capacitance
VOUT=0
VIN=0
8.5
7.5
pF
Control Pin Capacitance
9
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0MHz
Data Retention
Parameter
Test Conditions
150°C
Min
10
Unit
Years
Years
Minimum Pattern Data Retention Time
20
125°C
PRELIMINARY
(September, 2002, Version 0.2)
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AMIC Technology, Inc.
A29L800 Series
Test Conditions
Test Specifications
Test Condition
-70
-90
Unit
Output Load
1 TTL gate
Output Load Capacitance, CL(including jig capacitance)
Input Rise and Fall Times
30
5
100
5
pF
ns
V
Input Pulse Levels
0.0 - 3.0
1.5
0.0 - 3.0
1.5
Input timing measurement reference levels
Output timing measurement reference levels
V
1.5
1.5
V
Test Setup
3.3 V
2.7 K
W
Device
Under
Test
Diodes = IN3064 or Equivalent
CL
6.2 KW
PRELIMINARY
(September, 2002, Version 0.2)
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AMIC Technology, Inc.
A29L800 Series
Ordering Information
Top Boot Sector Flash
Part No.
Access Time
(ns)
Active Read
Current
Program/Erase
Current
Standby
Current
Package
Typ. (mA)
Typ. (mA)
Typ. (mA)
A29L800TM-70
A29L800TV-70
A29L800TG-70
A29L800TM-90
A29L800TV-90
A29L800TV-90U
A29L800TG-90
A29L800TG-90U
44Pin SOP
48Pin TSOP
48-ball TFBGA
44Pin SOP
70
90
9
9
20
20
0.2
48Pin TSOP
48Pin TSOP
48-ball TFBGA
48-ball TFBGA
0.2
Bottom Boot Sector Flash
Part No.
Access Time
Active Read
Current
Typ. (mA)
Program/Erase
Current
Standby
Current
Typ. (mA)
Package
(ns)
Typ. (mA)
A29L800UM-70
A29L800UV-70
A29L800UG-70
A29L800UM-90
A29L800UV-90
A29L800UV-90U
A29L800UG-90
A29L800UG-90U
44Pin SOP
48Pin TSOP
48-ball TFBGA
44Pin SOP
70
9
9
20
20
0.2
48Pin TSOP
48Pin TSOP
48-ball TFBGA
48-ball TFBGA
90
0.2
PRELIMINARY
(September, 2002, Version 0.2)
38
AMIC Technology, Inc.
A29L800 Series
Package Information
SOP 44L Outline Dimensions
unit: inches/mm
23
44
Gauge Plane
0.010"
q
L
1
22
b
Detail F
D
S
L1
e
y
Seating Plane
See Detail F
Dimensions in inches
Dimensions in mm
Symbol
Min
Nom
-
Max
0.118
-
Min
Nom
-
Max
3.00
A
A1
A2
b
-
-
0.10
2.62
0.33
0.18
-
0.004
-
-
-
0.103
0.106
0.016
0.008
1.122
0.496
0.050
0.631
0.032
0.0675
-
0.109
0.020
0.010
1.130
0.500
-
2.69
0.40
0.20
28.50
12.60
1.27
16.03
0.80
1.71
-
2.77
0.50
0.25
28.70
12.70
-
0.013
C
D
E
0.007
-
0.490
12.45
-
e
-
HE
L
0.620
0.643
0.040
-
15.75
0.61
-
16.33
1.02
-
0.024
L1
S
-
-
0.045
0.004
8°
-
1.14
0.10
8°
y
-
-
-
-
-
-
q
0°
0°
Notes:
1. The maximum value of dimension D includes end flash.
2. Dimension E does not include resin fins.
3. Dimension S includes end flash.
PRELIMINARY
(September, 2002, Version 0.2)
39
AMIC Technology, Inc.
A29L800 Series
Package Information
TSOP 48L (Type I) Outline Dimensions
unit: inches/mm
D
D1
1
48
D
24
25
q
L
Detail "A"
Detail "A"
Dimensions in inches
Dimensions in mm
Symbol
Min
Nom
Max
Min
Nom
Max
A
A1
A2
b
-
-
0.047
0.006
0.042
0.011
0.008
0.795
0.728
0.476
-
-
1.20
0.15
0.002
0.037
0.007
0.004
0.779
0.720
-
-
0.039
0.009
-
0.05
0.94
0.18
0.12
19.80
18.30
-
-
1.00
1.06
0.22
0.27
c
-
0.20
D
D1
E
e
0.787
0.724
0.472
0.020 BASIC
0.020
0.011 Typ.
-
20.00
18.40
12.00
0.50 BASIC
0.50
20.20
18.50
12.10
L
0.016
0.024
0.40
0.60
S
y
0.28 Typ.
-
-
0.004
8°
-
0.10
8°
0°
-
0°
-
q
Notes:
1. The maximum value of dimension D includes end flash.
2. Dimension E does not include resin fins.
3. Dimension S includes end flash.
PRELIMINARY
(September, 2002, Version 0.2)
40
AMIC Technology, Inc.
A29L800 Series
Package Information
48LD CSP (6 x 8 mm) Outline Dimensions
(48TFBGA)
unit: mm
TOP VIEW
BOTTOM VIEW
b
H
G
F
H
G
F
E
D
C
B
A
E
D
C
B
A
1
2 3 4 5 6
e
D1
Ball*A1 CORNER
D
SIDE VIEW
C
SEATING PLANE
0.10 C
Dimensions in mm
Symbol
Min.
Nom.
Max.
A
A1
b
-
-
0.25
1.20
0.30
0.40
6.10
0.20
0.30
5.90
-
D
6.00
D1
e
4.00 BSC
0.80
-
-
E
7.90
8.00
8.10
E1
5.60 BSC
PRELIMINARY
(September, 2002, Version 0.2)
41
AMIC Technology, Inc.
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