A290021UV-150_技术文档

A29002/A290021 Series

256K X 8 Bit CMOS 5.0 Volt-only,

Boot Sector Flash Memory

Features

nTypical 100,000 program/erase cycles per sector

n20-year data retention at 125°C

n5.0V ± 10% for read and write operations

nAccess times:

- 55/70/90/120/150 (max.)

nCurrent:

- Reliable operation for the life of the system

nCompatible with JEDEC-standards

- 20 mA typical active read current

- 30 mA typical program/erase current

- 1 mA typical CMOS standby

- Pinout and software compatible with single-power-

supply Flash memory standard

- Superior inadvertent write protection

nFlexible sector architecture

n

Polling and toggle bits

- Provides a software method of detecting completion

of program or erase operations

Data

- 16 Kbyte/ 8 KbyteX2/ 32 Kbyte/ 64 KbyteX3 sectors

- Any combination of sectors can be erased

- Supports full chip erase

nErase Suspend/Erase Resume

- Sector protection:

- Suspends a sector erase operation to read data

from, or program data to, a non-erasing sector, then

resumes the erase operation

A hardware method of protecting sectors to prevent

any inadvertent program or erase operations within

that sector

nHardware reset pin (

)

RESET

nTop or bottom boot block configurations available

nEmbedded Erase Algorithms

- Hardware method to reset the device to reading array

data (not available on A290021)

- Embedded Erase algorithm will automatically erase

the entire chip or any combination of designated

sectors and verify the erased sectors

- Embedded Program algorithm automatically writes

and verifies bytes at specified addresses

nPackage options

- 32-pin P-DIP, PLCC, or TSOP (Forward type)

General Description

The device requires only a single 5.0 volt power supply for both

read and write functions. Internally generated and regulated

voltages are provided for the program and erase operations.

The A29002 is entirely software command set compatible with

the JEDEC single-power-supply Flash standard. Commands

are written to the command register using standard

microprocessor write timings. Register contents serve as input

to an internal state-machine that controls the erase and

programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and erase

operations. Reading data out of the device is similar to reading

from other Flash or EPROM devices.

Device programming occurs by writing the proper program

command sequence. This initiates the Embedded Program

algorithm - an internal algorithm that automatically times the

program pulse widths and verifies proper program margin.

Device erasure occurs by executing the proper erase command

sequence. This initiates the Embedded Erase algorithm - an

internal algorithm that automatically preprograms the array (if it

is not already programmed) before executing the erase

operation. During erase, the device automatically times the

erase pulse widths and verifies proper erase margin.

The A29002 is a 5.0 volt-only Flash memory organized as

262,144 bytes of 8 bits each. The A29002 offers the

RESET

function, but it is not available on A290021. The 256 Kbytes

of data are further divided into seven sectors for flexible

sector erase capability. The 8 bits of data appear on I/O0 -

I/O7 while the addresses are input on A0 to A17. The A29002

is offered in 32-pin PLCC, TSOP, and PDIP packages. This

device is designed to be programmed in-system with the

standard system 5.0 volt VCC supply. Additional 12.0 volt

VPP is not required for in-system write or erase operations.

However, the A29002 can also be programmed in standard

EPROM programmers.

The A29002 has the first toggle bit, I/O6, which indicates

whether an Embedded Program or Erase is in progress, or it

is in the Erase Suspend. Besides the I/O6 toggle bit, the

A29002 has a second toggle bit, I/O2, to indicate whether the

addressed sector is being selected for erase. The A29002

also offers the ability to program in the Erase Suspend mode.

The standard A29002 offers access times of 55, 70, 90, 120,

and 150 ns, allowing high-speed microprocessors to operate

without wait states. To eliminate bus contention the device

has separate chip enable (

), write enable (

) and

WE

CE

output enable (

) controls.

OE

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AMIC Technology, Inc.

A29002/A290021 Series

The host system can detect whether a program or erase of memory. This can be achieved via programming

equipment.

operation is complete by reading the I/O7 (

Polling) and

Data

The Erase Suspend feature enables the user to put erase on

hold for any period of time to read data from, or program data

to, any other sector that is not selected for erasure. True

background erase can thus be achieved.

Power consumption is greatly reduced when the device is

placed in the standby mode.

I/O6 (toggle) status bits. After a program or erase cycle has

been completed, the device is ready to read array data or

accept another command.

The sector erase architecture allows memory sectors to be

erased and reprogrammed without affecting the data contents

of other sectors. The A29002 is fully erased when shipped

from the factory.

The hardware

pin terminates any operation in

RESET

The hardware sector protection feature disables operations

for both program and erase in any combination of the

sectors

progress and resets the internal state machine to reading

array data (This feature is not available on the A290021).

Pin Configurations

nDIP

nPLCC

NC on A290021

1

VCC

WE

32

31

30

RESET

A16

2

3

4

A15

A17

A12

A7

A6

A5

A4

A3

A2

A14

A13

A8

29

28

27

26

5

6

7

8

A14

A13

A8

A7

A6

A5

A4

29

28

27

26

25

24

23

22

21

5

6

A9

7

A9

8

A11

25

24

23

22

A29002L/

A290021L

A11

OE

A10

CE

9

A3

A2

OE

9

10

A10

10

11

12

13

14

15

16

11

12

13

CE

A1

A0

A1

A0

I/O7

21

20

19

18

17

I/O0

I/O1

I/O2

VSS

I/O7

I/O6

I/O5

I/O4

I/O3

I/O0

nTSOP (Forward type)

A11

A9

A8

1

2

3

4

5

6

7

8

32

OE

A10

CE

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

A13

A14

A17

WE

VCC

RESET

A16

A15

A12

A7

I/O

7

6

5

4

3

A29002V/A290021V

9

VSS

10

11

12

13

14

15

16

I/O

A0

A1

A2

A3

2

1

0

NC on A290021

A6

A5

A4

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AMIC Technology, Inc.

A29002/A290021 Series

Block Diagram

I/O0 - I/O7

VCC

VSS

Input/Output

Buffers

Erase Voltage

Generator

State

Control

WE

RESET

PGM Voltage

Generator

(N/A A290021)

Command

Register

Chip Enable

Output Enable

Logic

STB

Data Latch

CE

OE

Y-Decoder

Y-Gating

STB

VCC Detector

Timer

X-decoder

Cell Matrix

A0-A17

Pin Descriptions

Pin No.

A0 - A17

I/O0 - I/O7

Description

Address Inputs

Data Inputs/Outputs

Chip Enable

CE

WE

OE

Write Enable

Output Enable

Hardware Reset (N/A A290021)

Ground

RESET

VSS

VCC

Power Supply

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AMIC Technology, Inc.

A29002/A290021 Series

Absolute Maximum Ratings*

*Comments

Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to this device.

These are stress ratings only. Functional operation of

this device at these or any other conditions above

those indicated in the operational sections of these

specification is not implied or intended. Exposure to

the absolute maximum rating conditions for extended

periods may affect device reliability.

Ambient Operating Temperature . . . . . -55°C to + 125°C

Storage Temperature . . . . . . . . . . . . . . -65°C to + 125°C

Ground to VCC . . . . . . . . . . . . . . . . . . . . . . -2.0V to 7.0V

Output Voltage (Note 1) . . . . . . . . . . . . . . . -2.0V to 7.0V

A9,

&

(Note 2) . . . . . . . . . . . -2.0V to 12.5V

OE RESET

All other pins (Note 1) . . . . . . . . . . . . . . . . . -2.0V to 7.0V

Output Short Circuit Current (Note 3) . . . . . . . . . . 200mA

Notes:

Operating Ranges

1. Minimum DC voltage on input or I/O pins is -0.5V.

During voltage transitions, inputs may undershoot VSS

to -2.0V for periods of up to 20ns. Maximum DC voltage

on output and I/O pins is VCC +0.5V. During voltage

transitions, outputs may overshoot to VCC +2.0V for

periods up to 20ns.

Commercial (C) Devices

Ambient Temperature (TA) . . . . . . . . . . . . . . 0°C to +70°C

VCC Supply Voltages

VCC for ± 10% devices . . . . . . . . . . . . . . +4.5V to +5.5V

Operating ranges define those limits between which the

functionally of the device is guaranteed.

2. Minimum DC input voltage on A9 pins is -0.5V. During

voltage transitions, A9,

and

may overshoot

RESET

OE

VSS to -2.0V for periods of up to 20ns. Maximum DC

input voltage on A9 and is +12.5V which may

OE

overshoot to 13.5V for periods up to 20ns. (

N/A on A290021)

is

RESET

3. No more than one output is shorted at a time. Duration

of the short circuit should not be greater than one

second.

execute the command. The contents of the register serve

as inputs to the internal state machine. The state machine

outputs dictate the function of the device. The appropriate

device bus operations table lists the inputs and control

levels required, and the resulting output. The following

subsections describe each of these operations in further

detail.

Device Bus Operations

This section describes the requirements and use of the

device bus operations, which are initiated through the

internal command register. The command register itself

does not occupy any addressable memory location. The

register is composed of latches that store the commands,

along with the address and data information needed to

Table 1. A29002/A290021 Device Bus Operations

Operation

A0 – A17

I/O0 - I/O7

WE

CE

OE

RESET

(N/A A290021)

Read

Write

L

H

X

H

X

H

L

H

AIN

X

DOUT

DIN

L

H

CMOS Standby

TTL Standby

X

H

X

High-Z

X

VCC ± 0.5 V

H

L

X

VCC ± 0.5 V

Output Disable

Reset

H

L

X

Temporary Sector Unprotect (Note)

Legend:

VID

X

L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5V, X = Don't Care, DIN = Data In, DOUT = Data Out, AIN = Address In

Note: 1. See the "Sector Protection/Unprotection" section and Temporary Sector Unprotect for more information.

2. This function is not available on A290021.

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AMIC Technology, Inc.

A29002/A290021 Series

Standby Mode

Requirements for Reading Array Data

When the system is not reading or writing to the device, it

can place the device in the standby mode. In this mode,

current consumption is greatly reduced, and the outputs are

To read array data from the outputs, the system must drive

the

and

pins to VIL.

is the power control and

CE

OE

CE

selects the device.

is the output control and gates

OE

array data to the output pins.

placed in the high impedance state, independent of the

input.

OE

should remain at VIH all

WE

the time during read operation. The internal state machine

is set for reading array data upon device power-up, or after

a hardware reset. This ensures that no spurious alteration

of the memory content occurs during the power transition.

No command is necessary in this mode to obtain array

data. Standard microprocessor read cycles that assert valid

addresses on the device address inputs produce valid data

on the device data outputs. The device remains enabled for

read access until the command register contents are

altered.

See "Reading Array Data" for more information. Refer to the

AC Read Operations table for timing specifications and to

the Read Operations Timings diagram for the timing

waveforms, lCC1 in the DC Characteristics table represents

the active current specification for reading array data.

The device enters the CMOS standby mode when the

CE

&

pins (

only on A290021) are both held at VCC

CE

RESET

± 0.5V. (Note that this is a more restricted voltage range

than VIH.) The device enters the TTL standby mode when

is held at VIH, while

(Not available on

RESET

CE

A290021) is held at VCC±0.5V. The device requires the

standard access time (tCE) before it is ready to read data.

If the device is deselected during erasure or programming,

the device draws active current until the operation is

completed.

ICC3 in the DC Characteristics tables represents the standby

current specification.

Output Disable Mode

Writing Commands/Command Sequences

When the

input is at VIH, output from the device is

OE

disabled. The output pins are placed in the high impedance

state.

To write a command or command sequence (which

includes programming data to the device and erasing

sectors of memory), the system must drive

and

to

CE

WE

: Hardware Reset Pin (N/A on A290021)

RESET

VIL, and

to VIH. An erase operation can erase one

OE

The

pin provides a hardware method of resetting

RESET

the device to reading array data. When the system drives

the pin low for at least a period of tRP, the device

sector, multiple sectors, or the entire device. The Sector

Address Tables indicate the address range that each sector

occupies. A "sector address" consists of the address inputs

required to uniquely select a sector. See the "Command

Definitions" section for details on erasing a sector or the

entire chip, or suspending/resuming the erase operation.

After the system writes the autoselect command sequence,

the device enters the autoselect mode. The system can

then read autoselect codes from the internal register (which

is separate from the memory array) on I/O7 - I/O0. Standard

read cycle timings apply in this mode. Refer to the

"Autoselect Mode" and "Autoselect Command Sequence"

sections for more information.

RESET

immediately terminates any operation in progress, tristates

all data output pins, and ignores all read/write attempts for

the duration of the

pulse. The device also resets

RESET

the internal state machine to reading array data. The

operation that was interrupted should be reinitiated once

the device is ready to accept another command sequence,

to ensure data integrity.

The

pin may be tied to the system reset circuitry. A

RESET

system reset would thus also reset the Flash memory,

enabling the system to read the boot-up firmware from the

Flash memory.

Refer to the AC Characteristics tables for

parameters and diagram.

ICC2 in the Characteristics table represents the active

current specification for the write mode. The "AC

Characteristics" section contains timing specification tables

and timing diagrams for write operations.

RESET

Program and Erase Operation Status

During an erase or program operation, the system may

check the status of the operation by reading the status bits

on I/O7 - I/O0. Standard read cycle timings and ICC read

specifications apply. Refer to "Write Operation Status" for

more information, and to each AC Characteristics section

for timing diagrams.

(February, 2002, Version 1.0)

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AMIC Technology, Inc.

A29002/A290021 Series

Table 2. A29002/A290021 Top Boot Block Sector Address Table

Sector

A17

A16

A15

A14

A13

Sector Size

(Kbytes)

Address Range

SA0

SA1

SA2

SA3

SA4

SA5

SA6

0

1

0

1

0

1

X

0

1

X

0

X

0

64

32

8

00000h - 0FFFFh

10000h - 1FFFFh

20000h - 2FFFFh

30000h - 37FFFh

38000h - 39FFFh

3A000h - 3BFFFh

3C000h - 3FFFFh

0

1

8

1

X

16

Table 3. A29002/A290021 Bottom Boot Block Sector Address Table

Sector

A17

A16

A15

A14

A13

Sector Size

(Kbytes)

Address Range

SA0

SA1

SA2

SA3

SA4

SA5

SA6

0

1

0

1

0

1

0

1

X

0

1

X

0

16

8

00000h - 03FFFh

04000h - 05FFFh

06000h - 07FFFh

08000h - 0FFFFh

10000h - 1FFFFh

20000h - 2FFFFh

30000h - 3FFFFh

1

8

X

32

64

Codes (High Voltage Method) table. In addition, when

verifying sector protection, the sector address must appear

on the appropriate highest order address bits. Refer to the

corresponding Sector Address Tables. The Command

Definitions table shows the remaining address bits that are

don't care. When all necessary bits have been set as

required, the programming equipment may then read the

corresponding identifier code on I/O7 - I/O0.To access the

autoselect codes in-system, the host system can issue the

autoselect command via the command register, as shown

in the Command Definitions table. This method does not

require VID. See "Command Definitions" for details on

using the autoselect mode.

Autoselect Mode

The autoselect mode provides manufacturer and device

identification, and sector protection verification, through

identifier codes output on I/O7 - I/O0. This mode is primarily

intended for programming equipment to automatically

match a device to be programmed with its corresponding

programming algorithm. However, the autoselect codes

can also be accessed in-system through the command

register.

When using programming equipment, the autoselect mode

requires VID (11.5V to 12.5 V) on address pinA9. Address

pins A6, A1, and AO must be as shown in Autoselect

Table 4. A29002/A290021 Autoselect Codes (High Voltage Method)

Identifier Code on

I/O7 - I/O0

Description

A17 - A13 A12 - A10 A9

A8 - A7 A6 A5 - A2 A1

AO

Manufacturer ID: AMIC

X

VID

X

VIL

X

VIL

VIH

37h

Device ID: A29002/

A290021

Top Boot Block: 8Ch

Bottom Boot Block: 0Dh

01h (protected)

Sector Protection

Verification

Sector

Address

X

VID

X

VIL

X

VIH

VIL

VIH

00h (unprotected)

7Fh

Continuation ID

X

VID

X

Note:

=VIL,

=VIL and

=VIH when Autoselect Mode

WE

CE

OE

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AMIC Technology, Inc.

A29002/A290021 Series

Sector Protection/Unprotection

The hardware sector protection feature disables both

program and erase operations in any sector. The hardware

sector unprotection feature re-enables both program and

erase operations in previously protected sectors.

START

Sector protection/unprotection must be implemented using

programming equipment. The procedure requires a high

voltage (VID) on address pin A9 and the control pins.

The device is shipped with all sectors unprotected.

RESET = VID

(Note 1)

It is possible to determine whether a sector is protected or

unprotected. See "Autoselect Mode" for details.

Hardware Data Protection

Perform Erase or

Program Operations

The requirement of command unlocking sequence for

programming or erasing provides data protection against

inadvertent writes (refer to the Command Definitions table).

In addition, the following hardware data protection measures

prevent accidental erasure or programming, which might

otherwise be caused by spurious system level signals during

VCC power-up transitions, or from system noise. The device is

powered up to read array data to avoid accidentally writing

data to the array.

RESET = VIH

Write Pulse "Glitch" Protection

Temporary Sector

Unprotect

Completed (Note 2)

Noise pulses of less than 5ns (typical) on

do not initiate a write cycle.

,

or

OE CE

WE

Logical Inhibit

Notes:

1. All protected sectors unprotected.

2. All previously protected sectors are protected once again.

Write cycles are inhibited by holding any one of

=VIL,

OE

CE

= VIH or

= VIH. To initiate a write cycle,

and

CE

WE

must be a logical zero while

is a logical one.

OE

WE

Figure 1. Temporary Sector Unprotect Operation

Power-Up Write Inhibit

If

=

= VIL and

= VIH during power up, the

OE

WE

device does not accept commands on the rising edge of

. The internal state machine is automatically reset to

CE

WE

reading array data on the initial power-up.

Temporary Sector Unprotect (N/A on A290021)

This feature allows temporary unprotection of previous

protected sectors to change data in-system. The Sector

Unprotect mode is activated by setting the

pin to VID.

RESET

During this mode, formerly protected sectors can be

programmed or erased by selecting the sector addresses.

Once VID is removed from the

pin, all the previously

RESET

protected sectors are protected again. Figure 1 shows the

algorithm, and the Temporary Sector Unprotect diagram

shows the timing waveforms, for this feature.

(February, 2002, Version 1.0)

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AMIC Technology, Inc.

A29002/A290021 Series

Command Definitions

Autoselect Command Sequence

Writing specific address and data commands or sequences

into the command register initiates device operations. The

Command Definitions table defines the valid register

command sequences. Writing incorrect address and data

values or writing them in the improper sequence resets the

device to reading array data.

The autoselect command sequence allows the host system

to access the manufacturer and devices codes, and

determine whether or not a sector is protected. The

Command Definitions table shows the address and data

requirements. This method is an alternative to that shown in

the Autoselect Codes (High Voltage Method) table, which is

intended for PROM programmers and requires VID on

address bit A9.

The autoselect command sequence is initiated by writing two

unlock cycles, followed by the autoselect command. The

device then enters the autoselect mode, and the system may

read at any address any number of times, without initiating

another command sequence.

A read cycle at address XX00h retrieves the manufacturer

code and another read cycle at XX11h retrieves the

continuation code. A read cycle at address XX01h returns the

device code. A read cycle containing a sector address (SA)

and the address 02h in returns 01h if that sector is protected,

or 00h if it is unprotected. Refer to the Sector Address tables

for valid sector addresses.

All addresses are latched on the falling edge of

or

,

CE

WE

whichever happens later. All data is latched on the rising

edge of or , whichever happens first. Refer to the

WE

CE

appropriate timing diagrams in the "AC Characteristics"

section.

Reading Array Data

The device is automatically set to reading array data after

device power-up. No commands are required to retrieve

data. The device is also ready to read array data after

completing an Embedded Program or Embedded Erase

algorithm. After the device accepts an Erase Suspend

command, the device enters the Erase Suspend mode. The

system can read array data using the standard read timings,

except that if it reads at an address within erase-suspended

sectors, the device outputs status data. After completing a

programming operation in the Erase Suspend mode, the

system may once again read array data with the same

exception. See "Erase Suspend/Erase Resume Commands"

for more information on this mode.

The system must issue the reset command to re-enable the

device for reading array data if I/O5 goes high, or while in the

autoselect mode. See the "Reset Command" section, next.

See also "Requirements for Reading Array Data" in the

"Device Bus Operations" section for more information. The

Read Operations table provides the read parameters, and

Read Operation Timings diagram shows the timing diagram.

The system must write the reset command to exit the

autoselect mode and return to reading array data.

Byte Program Command Sequence

Programming is a four-bus-cycle operation. The program

command sequence is initiated by writing two unlock write

cycles, followed by the program set-up command. The

program address and data are written next, which in turn

initiate the Embedded Program algorithm. The system is not

required to provide further controls or timings. The device

automatically provides internally generated program pulses

and verify the programmed cell margin. The Command

Definitions table shows the address and data requirements

for the byte program command sequence.

When the Embedded Program algorithm is complete, the

device then returns to reading array data and addresses are

no longer latched. The system can determine the status of

the program operation by using I/O7 or I/O6. See "Write

Operation Status" for information on these status bits.

Any commands written to the device during the Embedded

Program Algorithm are ignored. Programming is allowed in

any sequence and across sector boundaries. A bit cannot be

programmed from a "0" back to a "1 ". Attempting to do so

may halt the operation and set I/O5 to "1", or cause the

Reset Command

Writing the reset command to the device resets the device to

reading array data. Address bits are don't care for this

command. The reset command may be written between the

sequence cycles in an erase command sequence before

erasing begins. This resets the device to reading array data.

Once erasure begins, however, the device ignores reset

commands until the operation is complete.

The reset command may be written between the sequence

cycles in

a

program command sequence before

Polling algorithm to indicate the operation was

Data

programming begins. This resets the device to reading array

data (also applies to programming in Erase Suspend mode).

Once programming begins, however, the device ignores

reset commands until the operation is complete.

successful. However, a succeeding read will show that the

data is still "0". Only erase operations can convert a "0" to a

"1".

The reset command may be written between the sequence

cycles in an autoselect command sequence. Once in the

autoselect mode, the reset command must be written to

return to reading array data (also applies to autoselect during

Erase Suspend).

If I/O5 goes high during a program or erase operation, writing

the reset command returns the device to reading array data

(also applies during Erase Suspend).

(February, 2002, Version 1.0)

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AMIC Technology, Inc.

A29002/A290021 Series

Any commands written to the chip during the Embedded

Erase algorithm are ignored. The system can determine the

status of the erase operation by using I/O7, I/O6, or I/O2. See

"Write Operation Status" for information on these status bits.

When the Embedded Erase algorithm is complete, the device

returns to reading array data and addresses are no longer

latched.

Figure 3 illustrates the algorithm for the erase operation. See

the Erase/Program Operations tables in "AC Characteristics"

for parameters, and to the Chip/Sector Erase Operation

Timings for timing waveforms.

START

Write Program

Command

Sequence

Sector Erase Command Sequence

Data Poll

from System

Embedded

Program

algorithm in

progress

Sector erase is a six-bus-cycle operation. The sector erase

command sequence is initiated by writing two unlock cycles,

followed by a set-up command. Two additional unlock write

cycles are then followed by the address of the sector to be

erased, and the sector erase command. The Command

Definitions table shows the address and data requirements

for the sector erase command sequence.

The device does not require the system to preprogram the

memory prior to erase. The Embedded Erase algorithm

automatically programs and verifies the sector for an all zero

data pattern prior to electrical erase. The system is not

required to provide any controls or timings during these

operations.

After the command sequence is written, a sector erase time-

out of 50ms begins. During the time-out period, additional

sector addresses and sector erase commands may be

written. Loading the sector erase buffer may be done in any

sequence, and the number of sectors may be from one

sector to all sectors. The time between these additional

cycles must be less than 50ms, otherwise the last address

and command might not be accepted, and erasure may

begin. It is recommended that processor interrupts be

disabled during this time to ensure all commands are

accepted. The interrupts can be re-enabled after the last

Sector Erase command is written. If the time between

additional sector erase commands can be assumed to be

less than 50ms, the system need not monitor I/O3. Any

command other than Sector Erase or Erase Suspend during

the time-out period resets the device to reading array data.

The system must rewrite the command sequence and any

additional sector addresses and commands.

Verify Data ?

Yes

No

Increment Address

Last Address ?

Yes

Programming

Completed

Note : See the appropriate Command Definitions table for

program command sequence.

Figure 2. Program Operation

Chip Erase Command Sequence

The system can monitor I/O3 to determine if the sector erase

timer has timed out. (See the " I/O3: Sector Erase Timer"

section.) The time-out begins from the rising edge of the final

Chip erase is a six-bus-cycle operation. The chip erase

command sequence is initiated by writing two unlock cycles,

followed by a set-up command. Two additional unlock write

cycles are then followed by the chip erase command, which

in turn invokes the Embedded Erase algorithm. The device

does not require the system to preprogram prior to erase.

The Embedded Erase algorithm automatically preprograms

and verifies the entire memory for an all zero data pattern

prior to electrical erase. The system is not required to provide

any controls or timings during these operations. The

Command Definitions table shows the address and data

requirements for the chip erase command sequence.

pulse in the command sequence.

WE

Once the sector erase operation has begun, only the Erase

Suspend command is valid. All other commands are ignored.

When the Embedded Erase algorithm is complete, the device

returns to reading array data and addresses are no longer

latched. The system can determine the status of the erase

operation by using I/O7, I/O6, or I/O2. Refer to "Write

Operation Status" for information on these status bits.

(February, 2002, Version 1.0)

9

AMIC Technology, Inc.

A29002/A290021 Series

Figure 3 illustrates the algorithm for the erase operation.

Refer to the Erase/Program Operations tables in the "AC

Characteristics" section for parameters, and to the Sector

Erase Operations Timing diagram for timing waveforms.

START

Erase Suspend/Erase Resume Commands

The Erase Suspend command allows the system to interrupt

a sector erase operation and then read data from, or program

data to, any sector not selected for erasure. This command is

valid only during the sector erase operation, including the

50ms time-out period during the sector erase command

sequence. The Erase Suspend command is ignored if written

during the chip erase operation or Embedded Program

algorithm. Writing the Erase Suspend command during the

Sector Erase time-out immediately terminates the time-out

period and suspends the erase operation. Addresses are

"don't cares" when writing the Erase Suspend command.

When the Erase Suspend command is written during a

sector erase operation, the device requires a maximum of

20ms to suspend the erase operation. However, when the

Erase Suspend command is written during the sector erase

time-out, the device immediately terminates the time-out

period and suspends the erase operation.

Write Erase

Command

Sequence

Data Poll

from System

Embedded

Erase

algorithm in

progress

No

Data = FFh ?

After the erase operation has been suspended, the system

can read array data from or program data to any sector not

selected for erasure. (The device "erase suspends" all

sectors selected for erasure.) Normal read and write timings

and command definitions apply. Reading at any address

within erase-suspended sectors produces status data on I/O7

- I/O0. The system can use I/O7, or I/O6 and I/O2 together, to

determine if a sector is actively erasing or is erase-

suspended. See "Write Operation Status" for information on

these status bits.

After an erase-suspended program operation is complete,

the system can once again read array data within non-

suspended sectors. The system can determine the status of

the program operation using the I/O7 or I/O6 status bits, just

as in the standard program operation. See "Write Operation

Status" for more information.

Yes

Erasure Completed

Note :

1. See the appropriate Command Definitions table for erase

command sequences.

2. See "I/O3 : Sector Erase Timer" for more information.

Figure 3. Erase Operation

The system may also write the autoselect command

sequence when the device is in the Erase Suspend mode.

The device allows reading autoselect codes even at

addresses within erasing sectors, since the codes are not

stored in the memory array. When the device exits the

autoselect mode, the device reverts to the Erase Suspend

mode, and is ready for another valid operation. See

"Autoselect Command Sequence" for more information.

The system must write the Erase Resume command

(address bits are "don't care") to exit the erase suspend

mode and continue the sector erase operation. Further writes

of the Resume command are ignored. Another Erase

Suspend command can be written after the device has

resumed erasing.

(February, 2002, Version 1.0)

10

AMIC Technology, Inc.

A29002/A290021 Series

Table 5. A29002/A290021 Command Definitions

Bus Cycles (Notes 2 - 4)

Command

Sequence

(Note 1)

First

Addr Data Addr

Second

Third

Fourth

Fifth

Sixth

Data

Addr Data

Addr Data Addr Data

Read (Note 5)

Reset (Note 6)

1

4

RA

RD

XXX F0

555 AA

Manufacturer ID

2AA

55

555

90

X00

X01

37

Autoselect

(Note 7)

Top

Bottom

8C

0D

Device ID

7F

Continuation ID

4

555 AA

2AA 55

555

90

X03

00

Sector Protect Verify

(Note 8)

SA

X02

2AA

55

01

Program

4

6

1

AA

555

2AA

55

555 A0

PA

555

PD

Chip Erase

Sector Erase

555 AA

XXX B0

XXX 30

555

80

AA

2AA

2AA 55

55

555

SA

10

30

Erase Suspend (Note 9)

Erase Resume (Note 10)

Legend:

X = Don't care

RA = Address of the memory location to be read.

RD = Data read from location RA during read operation.

PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the

whichever happens later.

or

pulse,

CE

WE

PD = Data to be programmed at location PA. Data latches on the rising edge of

or

pulse, whichever happens first.

CE

WE

SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A17 - A13 select a unique sector.

Note:

1. See Table 1 for description of bus operations.

2. All values are in hexadecimal.

3. Except when reading array or autoselect data, all bus cycles are write operation.

4. Address bits A17 - A12 are don't cares for unlock and command cycles, unless SA or PA required.

5. No unlock or command cycles required when reading array data.

6. The Reset command is required to return to reading array data when device is in the autoselect mode, or if I/O5 goes high

(while the device is providing status data).

7. The fourth cycle of the autoselect command sequence is a read cycle.

8. The data is 00h for an unprotected sector and 01h for a protected sector. See "Autoselect Command Sequence" for more

information.

9. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend

mode.

10. The Erase Resume command is valid only during the Erase Suspend mode.

11. The time between each command cycle has to be less than 50ms.

(February, 2002, Version 1.0)

11

AMIC Technology, Inc.

A29002/A290021 Series

Write Operation Status

Several bits, I/O2, I/O3, I/O5, I/O6, and I/O7, are provided in

the A29002/A290021 to determine the status of a write

operation. Table 6 and the following subsections describe

the functions of these status bits. I/O7, I/O6 and I/O2 each

offer a method for determining whether a program or erase

operation is complete or in progress. These three bits are

discussed first.

START

Read I/O7-I/O0

Address = VA

I/O7:

Polling

Data

The

Polling bit, I/O7, indicates to the host system

Data

whether an Embedded Algorithm is in progress or

completed, or whether the device is in Erase Suspend.

Yes

I/O7 = Data ?

Polling is valid after the rising edge of the final

Data

pulse in the program or erase command sequence.

WE

During the Embedded Program algorithm, the device

outputs on I/O7 the complement of the datum programmed

to I/O7. This I/O7 status also applies to programming during

Erase Suspend. When the Embedded Program algorithm

is complete, the device outputs the datum programmed to

I/O7. The system must provide the program address to

read valid status information on I/O7. If a program address

No

I/O5 = 1?

Yes

No

falls within a protected sector,

Polling on I/O7 is

Data

active for approximately 2ms, then the device returns to

reading array data.

Read I/O7 - I/O0

Address = VA

During the Embedded Erase algorithm,

produces a "0" on I/O7. When the Embedded Erase

Polling

Data

algorithm is complete, or if the device enters the Erase

Suspend mode,

Polling produces a "1" on I/O7.This

Data

is analogous to the complement/true datum output

described for the Embedded Program algorithm: the erase

function changes all the bits in a sector to "1"; prior to this,

the device outputs the "complement," or "0." The system

must provide an address within any of the sectors selected

for erasure to read valid status information on I/O7.

Yes

I/O7 = Data ?

After an erase command sequence is written, if all sectors

No

selected for erasing are protected,

Polling on I/O7 is

Data

active for approximately 100ms, then the device returns to

reading array data. If not all selected sectors are protected,

the Embedded Erase algorithm erases the unprotected

sectors, and ignores the selected sectors that are

protected.

FAIL

PASS

When the system detects I/O7 has changed from the

complement to true data, it can read valid data at I/O7 - I/O0

on the following read cycles. This is because I/O7 may

change asynchronously with I/O0 - I/O6 while Output Enable

Note :

1. VA = Valid address for programming. During a sector

erase operation, a valid address is an address within any

sector selected for erasure. During chip erase, a valid

address is any non-protected sector address.

2. I/O7 should be rechecked even if I/O5 = "1" because

I/O7 may change simultaneously with I/O5.

(

) is asserted low. The

Polling Timings (During

Data

OE

Embedded Algorithms) figure in the "AC Characteristics"

section illustrates this. Table 6 shows the outputs for

Data

Polling algorithm.

Polling on I/O7. Figure 4 shows the

Data

Figure 4. Data Polling Algorithm

(February, 2002, Version 1.0)

12

AMIC Technology, Inc.

A29002/A290021 Series

bits are required for sector and mode information. Refer to

Table 6 to compare outputs for I/O2 and I/O6.

I/O6: Toggle Bit I

Toggle Bit I on I/O6 indicates whether an Embedded

Program or Erase algorithm is in progress or complete, or

whether the device has entered the Erase Suspend mode.

Toggle Bit I may be read at any address, and is valid after

Figure 5 shows the toggle bit algorithm in flowchart form,

and the section " I/O2: Toggle Bit II" explains the algorithm.

See also the " I/O6: Toggle Bit I" subsection. Refer to the

Toggle Bit Timings figure for the toggle bit timing diagram.

The I/O2 vs. I/O6 figure shows the differences between I/O2

and I/O6 in graphical form.

the rising edge of the final

sequence (prior to the program or erase operation), and

during the sector erase time-out.

During an Embedded Program or Erase algorithm

operation, successive read cycles to any address cause

pulse in the command

WE

Reading Toggle Bits I/O6, I/O2

Refer to Figure 5 for the following discussion. Whenever

the system initially begins reading toggle bit status, it must

read I/O7 - I/O0 at least twice in a row to determine whether

a toggle bit is toggling. Typically, a system would note and

store the value of the toggle bit after the first read. After the

second read, the system would compare the new value of

the toggle bit with the first. If the toggle bit is not toggling,

the device has completed the program or erase operation.

The system can read array data on I/O7 - I/O0 on the

following read cycle.

I/O6 to toggle. (The system may use either

control the read cycles.) When the operation is complete,

I/O6 stops toggling.

After an erase command sequence is written, if all sectors

selected for erasing are protected, I/O6 toggles for

approximately 100ms, then returns to reading array data. If

not all selected sectors are protected, the Embedded

Erase algorithm erases the unprotected sectors, and

ignores the selected sectors that are protected.

or

to

CE

OE

However, if after the initial two read cycles, the system

determines that the toggle bit is still toggling, the system

also should note whether the value of I/O5 is high (see the

section on I/O5). If it is, the system should then determine

again whether the toggle bit is toggling, since the toggle bit

may have stopped toggling just as I/O5 went high. If the

toggle bit is no longer toggling, the device has successfully

completed the program or erase operation. If it is still

toggling, the device did not complete the operation

successfully, and the system must write the reset

command to return to reading array data.

The remaining scenario is that the system initially

determines that the toggle bit is toggling and I/O5 has not

gone high. The system may continue to monitor the toggle

bit and I/O5 through successive read cycles, determining

the status as described in the previous paragraph.

Alternatively, it may choose to perform other system tasks.

In this case, the system must start at the beginning of the

algorithm when it returns to determine the status of the

operation (top of Figure 5).

The system can use I/O6 and I/O2 together to determine

whether a sector is actively erasing or is erase-suspended.

When the device is actively erasing (that is, the Embedded

Erase algorithm is in progress), I/O6 toggles. When the

device enters the Erase Suspend mode, I/O6 stops

toggling. However, the system must also use I/O2 to

determine which sectors are erasing or erase-suspended.

Alternatively, the system can use I/O7 (see the subsection

on " I/O7 :

Polling").

Data

If a program address falls within a protected sector, I/O6

toggles for approximately 2ms after the program command

sequence is written, then returns to reading array data.

I/O6 also toggles during the erase-suspend-program mode,

and stops toggling once the Embedded Program algorithm

is complete.

The Write Operation Status table shows the outputs for

Toggle Bit I on I/O6. Refer to Figure 5 for the toggle bit

algorithm, and to the Toggle Bit Timings figure in the "AC

Characteristics" section for the timing diagram. The I/O2 vs.

I/O6 figure shows the differences between I/O2 and I/O6 in

graphical form. See also the subsection on " I/O2: Toggle

Bit II".

I/O5: Exceeded Timing Limits

I/O5 indicates whether the program or erase time has

exceeded a specified internal pulse count limit. Under

these conditions I/O5 produces a "1." This is a failure

condition that indicates the program or erase cycle was not

successfully completed.

The I/O5 failure condition may appear if the system tries to

program a "1 "to a location that is previously programmed

to "0." Only an erase operation can change a "0" back to a

"1." Under this condition, the device halts the operation,

and when the operation has exceeded the timing limits,

I/O5 produces a "1."

I/O2: Toggle Bit II

The "Toggle Bit II" on I/O2, when used with I/O6, indicates

whether a particular sector is actively erasing (that is, the

Embedded Erase algorithm is in progress), or whether that

sector is erase-suspended. Toggle Bit II is valid after the

rising edge of the final

sequence.

I/O2 toggles when the system reads at addresses within

pulse in the command

WE

those sectors that have been selected for erasure. (The

Under both these conditions, the system must issue the

reset command to return the device to reading array data.

system may use either

or

to control the read

CE

OE

cycles.) But I/O2 cannot distinguish whether the sector is

actively erasing or is erase-suspended. I/O6, by

comparison, indicates whether the device is actively

erasing, or is in Erase Suspend, but cannot distinguish

which sectors are selected for erasure. Thus, both status

(February, 2002, Version 1.0)

13

AMIC Technology, Inc.

A29002/A290021 Series

I/O3: Sector Erase Timer

After writing a sector erase command sequence, the

system may read I/O3 to determine whether or not an

erase operation has begun. (The sector erase timer does

not apply to the chip erase command.) If additional

sectors are selected for erasure, the entire time-out also

applies after each additional sector erase command.

When the time-out is complete, I/O3 switches from "0" to

"1." The system may ignore I/O3 if the system can

guarantee that the time between additional sector erase

commands will always be less than 50ms. See also the

"Sector Erase Command Sequence" section.

START

Read I/O7-I/O0

(Note 1)

After the sector erase command sequence is written, the

system should read the status on I/O7 (

Polling) or

Data

I/O6 (Toggle Bit 1) to ensure the device has accepted the

command sequence, and then read I/O3. If I/O3 is "1", the

internally controlled erase cycle has begun; all further

commands (other than Erase Suspend) are ignored until

the erase operation is complete. If I/O3 is "0", the device

will accept additional sector erase commands. To ensure

the command has been accepted, the system software

should check the status of I/O3 prior to and following each

subsequent sector erase command. If I/O3 is high on the

second status check, the last command might not have

been accepted. Table 6 shows the outputs for I/O3.

No

Toggle Bit

= Toggle ?

Yes

No

I/O5 = 1?

Yes

Read I/O7 - I/O0

(Notes 1,2)

Twice

No

Toggle Bit

= Toggle ?

Yes

Program/Erase

Operation Not

Commplete, Write

Reset Command

Program/Erase

Operation Complete

Notes :

1. Read toggle bit twice to determine whether or not it is

toggling. See text.

2. Recheck toggle bit because it may stop toggling as I/O5

changes to "1". See text.

Figure 5. Toggle Bit Algorithm

(February, 2002, Version 1.0)

14

AMIC Technology, Inc.

A29002/A290021 Series

Table 6. Write Operation Status

I/O7

I/O6

I/O5

I/O3

I/O2

Operation

(Note 1)

(Note 2)

(Note 1)

Standard

Mode

Embedded Program Algorithm

Embedded Erase Algorithm

Toggle

0

N/A

1

No toggle

Toggle

I/O7

0

Erase

Suspend

Mode

Reading within Erase

Suspended Sector

1

No toggle

N/A

Toggle

Reading within Non-Erase

Suspend Sector

Data

I/O7

Data

0

Data

N/A

Data

N/A

Erase-Suspend-Program

Toggle

Notes:

1. I/O7 and I/O2 require a valid address when reading status information. Refer to the appropriate subsection for further

details.

2. I/O5 switches to “1” when an Embedded Program or Embedded Erase operation has exceeded the maximum timing

limits. See “I/O5: Exceeded Timing Limits” for more information.

Maximum Negative Input Overshoot

20ns

+0.8V

-0.5V

-2.0V

20ns

Maximum Positive Input Overshoot

20ns

VCC+2.0V

VCC+0.5V

2.0V

20ns

(February, 2002, Version 1.0)

15

AMIC Technology, Inc.

A29002/A290021 Series

DC Characteristics

TTL/NMOS Compatible

Parameter

Parameter Description

Input Load Current

A9, Input Load Current

Test Description

Min.

Typ.

Max.

Unit

mA

Symbol

ILI

VIN = VSS to VCC. VCC = VCC Max

±1.0

VCC = VCC Max,

ILIT

100

&

mA

OE RESET

A9,

&

=12.5V

OE RESET

ILO

Output Leakage Current

VOUT = VSS to VCC. VCC = VCC Max

±1.0

mA

ICC1

VCC Active Read Current

(Notes 1, 2)

20

30

mA

= VIL,

= VIH

=VIH

CE

OE

VCC Active Write (Program/Erase)

Current (Notes 2, 3, 4)

ICC2

ICC3

40

mA

= VIL,

= VIH,

VCC Standby Current (Note 2)

0.4

1.0

= VCC ± 0.5V

RESET

VIL

VIH

Input Low Level

Input High Level

-0.5

2.0

0.8

V

VCC+0.5

Voltage for Autoselect and

Temporary Unprotect Sector

Output Low Voltage

VID

VCC = 5.25 V

10.5

V

12.5

0.45

VOL

VOH

IOL = 12mA, VCC = VCC Min

IOH = -2.5 mA, VCC = VCC Min

V

Output High Voltage

2.4

CMOS Compatible

Parameter

Symbol

Parameter Description

Input Load Current

A9,

Test Description

Min.

Typ. Max.

Unit

ILI

VIN = VSS to VCC, VCC = VCC Max

±1.0

mA

VCC = VCC Max,

ILIT

100

&

Input Load Current

OE RESET

A9,

&

= 12.5V

OE RESET

ILO

Output Leakage Current

VOUT = VSS to VCC, VCC = VCC Max

±1.0

mA

VCC Active Read Current

(Notes 1,2)

ICC1

20

30

mA

= VIL,

= VIH

CE

OE

VCC Active Program/Erase Current

(Notes 2,3,4)

ICC2

ICC3

30

1

40

5

mA

= VIH

VCC Standby Current (Notes 2, 5)

mA

=

= VCC ± 0.5 V

CE RESET

VIL

VIH

Input Low Level

-0.5

V

0.8

Input High Level

0.7 x VCC

VCC+0.3

Voltage for Autoselect and

Temporary Sector Unprotect

Output Low Voltage

VID

VCC = 5.25 V

10.5

12.5

0.45

V

VOL

VOH1

VOH2

IOL = 12.0 mA, VCC = VCC Min

IOH = -2.5 mA, VCC = VCC Min

IOH = -100 mA. VCC = VCC Min

V

0.85 x VCC

VCC-0.4

Output High Voltage

Notes for DC characteristics (both tables):

1. The ICC current listed includes both the DC operation current and the frequency dependent component (at 6 MHz).

The frequency component typically is less than 2 mA/MHz, with

at VIH.

OE

2. Maximum ICC specifications are tested with VCC = VCC max.

3. ICC active while Embedded Algorithm (program or erase) is in progress.

4. Not 100% tested.

5. For CMOS mode only, ICC3 = 20mA max at extended temperatures (> +85°C).

6.

is not available on A290021.

RESET

(February, 2002, Version 1.0)

16

AMIC Technology, Inc.

A29002/A290021 Series

AC Characteristics

Read Only Operations

Parameter Symbols

Description

Test Setup

Speed

Unit

JEDEC

Std

-55

-70

-90 -120

-150

Read Cycle Time (Note 2)

Address to Output Delay

tAVAV

tRC

Min.

55

70

90

120

150

ns

tAVQV

tACC

= VIL

Max.

CE

55

70

150

= VIL

OE

Chip Enable to Output Delay

Output Enable to Output Delay

tELQV

tGLQV

tCE

tOE

Max.

Min.

55

30

0

70

30

0

90

35

0

120 150

ns

= VIL

OE

50

0

55

0

Read

Output Enable Hold

tOEH

Toggle and

Polling

Min.

10

Time (Note 2)

10

ns

Data

Chip Enable to Output High Z

(Notes 1,2)

tEHQZ

tGHQZ

tAXQX

tDF

tOH

Max.

18

0

20

0

20

0

30

0

35

0

ns

Output Enable to Output High Z

(Notes 1,2)

Output Hold Time from Addresses,

Min.

or

CE OE

, Whichever Occurs First

Notes:

1. Output driver disable time.

2. Not 100% tested.

Timing Waveforms for Read Only Operation (

=VIH on A29002)

RESET

tRC

Addresses

Addresses Stable

tACC

CE

OE

tDF

tOE

tOEH

WE

tCE

tOH

High-Z

Output

Output Valid

0V

(February, 2002, Version 1.0)

17

AMIC Technology, Inc.

A29002/A290021 Series

Hardware Reset (

Parameter

) (N/A on A290021)

RESET

Description

Test Setup

All Speed Options

Unit

ms

JEDEC

Std

Pin Low (During Embedded

RESET

tREADY

Max

20

Algorithms) to Read or Write (See Note)

Pin Low (Not During Embedded

RESET

Algorithms) to Read or Write (See Note)

tREADY

Max

500

ns

tRP

tRH

Min

500

50

ns

Pulse Width

RESET

High Time Before Read (See Note)

Note: Not 100% tested.

Timings

RESET

CE, OE

tRH

RESET

tRP

tReady

Reset Timings NOT during Embedded Algorithms

Reset Timings during Embedded Algorithms

RESET

tRP

Temporary Sector Unprotect (N/A on A290021)

Parameter

Description

All Speed Options

Unit

ns

JEDEC

Std

tVIDR

VID Rise and Fall Time (See Note)

Min

500

4

Setup Time for Temporary Sector

RESET

Unprotect

tRSP

ms

Note: Not 100% tested.

Temporary Sector Unprotect Timing Diagram

12V

0 or 5V

RESET

tVIDR

Program or Erase Command Sequence

CE

WE

tRSP

(February, 2002, Version 1.0)

18

AMIC Technology, Inc.

A29002/A290021 Series

AC Characteristics

Erase and Program Operations

Parameter Symbols

Description

Speed

Unit

JEDEC

tAVAV

Std

tWC

tAS

-55

-70

-90 -120

-150

Write Cycle Time (Note 1)

Min.

55

70

90

0

120 150

ns

Address Setup Time

Address Hold Time

tAVWL

tWLAX

tDVWH

tWHDX

tAH

40

25

45

30

45

0

50

tDS

Data Setup Time

Data Hold Time

tDH

Output Enable Setup Time

Read Recover Time Before Write

tOES

0

tGHWL

Min.

0

ns

(

high to

low)

WE

OE

tELWL

tWHEH

tWLWH

tCS

tCH

tWP

Min.

Max.

0

ns

ms

Setup Time

Hold Time

CE

0

Write Pulse Width

30

35

45

20

50

tWHWL

tWHWH1

tWHWH2

tWPH

Write Pulse Width High

Byte Programming Operation

(Note 2)

tWHWH1

Typ.

7

ms

sec

ms

Sector Erase Operation

(Note 2)

tWHWH2

tVCS

Typ.

Min.

1

VCC Set Up Time (Note 1)

50

Notes:

1. Not 100% tested.

2. See the "Erase and Programming Performance" section for more information.

(February, 2002, Version 1.0)

19

AMIC Technology, Inc.

A29002/A290021 Series

Timing Waveforms for Program Operation

Program Command Sequence (last two cycles)

Read Status Data (last two cycles)

tWC

tAS

Addresses

CE

PA

555h

PA

tAH

tCH

tWP

tGHWL

OE

tWHWH1

WE

tCS

tWPH

tDS

tDH

Data

VCC

A0h

PD

DOUT

Status

tVCS

Note : PA = program addrss, PD = program data, Dout is the true data at the program address.

(February, 2002, Version 1.0)

20

AMIC Technology, Inc.

A29002/A290021 Series

Timing Waveforms for Chip/Sector Erase Operation

Erase Command Sequence (last two cycles)

Read Status Data

tAS

tWC

SA

VA

Addresses

CE

2AAh

VA

555h for chip erase

tAH

tGHWL

tCH

tWP

OE

WE

tWPH

tDH

tWHWH2

tCS

tDS

In

Progress

Data

VCC

55h

30h

10h for chip erase

Complete

tVCS

Note : SA = Sector Address. VA = Valid Address for reading status data.

(February, 2002, Version 1.0)

21

AMIC Technology, Inc.

A29002/A290021 Series

Timing Waveforms for

Polling (During Embedded Algorithms)

Data

tRC

Addresses

VA

tACC

tCE

CE

tCH

OE

tOE

tDF

tOEH

WE

tOH

High-Z

Valid Data

I/O7

Complement

Complement True

High-Z

I/O0 - I/O6

Valid Data

Status Data

True

Note : VA = Valid Address. Illustation shows first status cycle after command sequence, last status read cycle, and array data

read cycle.

(February, 2002, Version 1.0)

22

AMIC Technology, Inc.

A29002/A290021 Series

Timing Waveforms for Toggle Bit (During Embedded Algorithms)

tRC

Addresses

CE

VA

tACC

tCE

tCH

tOE

OE

tDF

tOEH

WE

tOH

I/O6 , I/O2

Valid Status

(first read)

Valid Status

(second read)

(stop togging)

Note: VA = Valid Address; not required for I/O6. Illustration shows first two status cycle after command sequence, last status

read cycle, and array data read cycle.

(February, 2002, Version 1.0)

23

AMIC Technology, Inc.

A29002/A290021 Series

Timing Waveforms for I/O2 vs. I/O6

Enter

Erase

Enter Erase

Suspend Program

Erase

Resume

Embedded

Suspend

Erasing

WE

Erase

Suspend

Program

Erase

Erase Suspend

Read

Erase Suspend

Read

Erase

Complete

I/O6

I/O2

I/O2 and I/O6 toggle with OE and CE

Note : Both I/O6 and I/O2 toggle with OE or CE. See the text on I/O6 and I/O2 in the section "Write Operation Statue" for

more information.

AC Characteristics

Erase and Program Operations

Alternate

Controlled Writes

CE

Parameter Symbols

Description

Speed

Unit

JEDEC

tAVAV

tAVEL

Std

tWC

tAS

-55

-70

-90

90

0

-120

-150

Write Cycle Time (Note 1)

Address Setup Time

Address Hold Time

Data Setup Time

Min.

55

70

120

150

ns

tELAX

tAH

40

25

45

30

45

0

50

tDVEH

tEHDX

tGHEL

tWLEL

tDS

tDH

Data Hold Time

tGHEL

tWS

Read Recover Time Before Write Min.

Min.

0

Setup Time

Hold Time

WE

tEHWH

tWH

Min.

0

ns

tELEH

tEHEL

tCP

Write Pulse Width

Min.

30

20

35

20

45

20

50

20

50

20

ns

tCPH

Write Pulse Width High

Byte Programming Operation

(Note 2)

tWHWH1

tWHWH2

tWHWH1

tWHWH2

Typ.

7

1

ms

Sector Erase Operation

(Note 2)

sec

Notes:

3. Not 100% tested.

4. See the "Erase and Programming Performance" section for more information.

(February, 2002, Version 1.0)

24

AMIC Technology, Inc.

A29002/A290021 Series

Timing Waveforms for Alternate

Controlled Write Operation (

=VIH on A29002)

CE

RESET

PA for program

SA for sector erase

555 for chip erase

555 for program

2AA for erase

Data Polling

PA

Addresses

tWC

tAS

tAH

tWH

WE

tGHEL

OE

tWHWH1 or 2

tCP

tBUSY

tCPH

tDH

CE

tWS

tDS

Data

DOUT

I/O7

tRH

A0 for program

55 for erase

PD for program

30 for sector erase

10 for chip erase

Note :

1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O7 = Complement of Data Input, DOUT = Array Data.

2. Figure indicates the last two bus cycles of the command sequence.

Erase and Programming Performance

Parameter

Sector Erase Time

Typ. (Note 1)

Max. (Note 2)

Unit

sec

ms

Comments

1

8

Excludes 00h programming

prior to erasure (Note 4)

Chip Erase Time

64

Byte Programming Time

Chip Programming Time (Note 3)

35

3.6

300

10.8

Excludes system-level

overhead (Note 5)

sec

Notes:

1. Typical program and erase times assume the following conditions: 25°C, 5.0V VCC, 100,000 cycles. Additionally,

programming typically assumes checkerboard pattern.

2. Under worst case conditions of 90°C, VCC = 4.5V (4.75V for -55), 100,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes

program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only

then does the device set I/O5 = 1. See the section on I/O5 for further information.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See

Table 4 for further information on command definitions.

6. The device has a guaranteed minimum erase and program cycle endurance of 100,000 cycles.

(February, 2002, Version 1.0)

25

AMIC Technology, Inc.

A29002/A290021 Series

Latch-up Characteristics

Description

Min.

-1.0V

Max.

VCC+1.0V

+100 mA

12.5V

Input Voltage with respect to VSS on all I/O pins

VCC Current

-100 mA

-1.0V

Input voltage with respect to VSS on all pins except I/O pins

(including A9,

and

)

RESET

OE

Includes all pins except VCC. Test conditions: VCC = 5.0V, one pin at time.

N/A on A290021

RESET

TSOP Pin Capacitance

Parameter Symbol

Parameter Description

Input Capacitance

Test Setup

VIN=0

Typ.

6

Max.

7.5

12

Unit

pF

CIN

COUT

CIN2

Output Capacitance

VOUT=0

VIN=0

8.5

7.5

pF

Control Pin Capacitance

9

pF

Notes:

1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 1.0MHz

PLCC and P-DIP Pin Capacitance

Parameter Symbol

Parameter Description

Test Setup

VIN=0

Typ.

Max.

6

Unit

pF

CIN

COUT

CIN2

Input Capacitance

4

8

Output Capacitance

Control Pin Capacitance

VOUT=0

VPP=0

12

pF

12

pF

Notes:

3. Sampled, not 100% tested.

4. Test conditions TA = 25°C, f = 1.0MHz

Data Retention

Parameter

Test Conditions

150°C

Min

10

Unit

Years

Minimum Pattern Data Retention Time

20

125°C

(February, 2002, Version 1.0)

26

AMIC Technology, Inc.

A29002/A290021 Series

Test Conditions

Test Specifications

Test Condition

-55

All others

Unit

Output Load

1 TTL gate

100

Output Load Capacitance, CL(including jig capacitance)

Input Rise and Fall Times

30

5

pF

ns

V

20

Input Pulse Levels

0.0 - 3.0

1.5

0.45 - 2.4

0.8, 2.0

Input timing measurement reference levels

Output timing measurement reference levels

V

1.5

V

Test Setup

5.0 V

2.7 K

W

Device

Under

Test

Diodes = IN3064 or Equivalent

CL

6.2 KW

(February, 2002, Version 1.0)

27

AMIC Technology, Inc.

A29002/A290021 Series

Ordering Information

Top Boot Sector Flash

Active Read

Current

Typ. (mA)

Program/Erase

Current

Access Time

Standby Current

Package

Part No.

(ns)

Typ. (mA)

A29002T-55

32Pin DIP

A290021T-55

A29002TL-55

A290021TL-55

32Pin PLCC

1

55

20

30

A29002TV-55

A290021TV-55

32Pin TSOP

32Pin DIP

A29002T-70

A290021T-70

A29002TL-70

A290021TL-70

32Pin PLCC

1

70

A29002TV-70

A290021TV-70

32Pin TSOP

32Pin DIP

A29002T-90

A290021T-90

A29002TL-90

A290021TL-90

32Pin PLCC

1

90

A29002TV-90

A290021TV-90

32Pin TSOP

32Pin DIP

A29002T-120

A290021T-120

A29002TL-120

A290021TL-120

32Pin PLCC

1

120

A29002TV-120

A290021TV-120

32Pin TSOP

32Pin DIP

A29002T-150

A290021T-150

A29002TL-150

A290021TL-150

32Pin PLCC

1

150

A29002TV-150

A290021TV-150

32Pin TSOP

(February, 2002, Version 1.0)

28

AMIC Technology, Inc.

A29002/A290021 Series

Ordering Information (continued)

Bottom Boot Sector Flash

Active Read

Current

Typ. (mA)

Program/Erase

Current

Access Time

Standby Current

Package

Part No.

(ns)

Typ. (mA)

A29002U-55

A290021U-55

32Pin DIP

A29002UL-55

32Pin PLCC

1

55

20

30

A290021UL-55

A29002UV-55

A290021UV-55

32Pin TSOP

32Pin DIP

A29002U-70

A290021U-70

A29002UL-70

32Pin PLCC

1

70

A290021UL-70

A29002UV-70

A290021UV-70

32Pin TSOP

32Pin DIP

A29002U-90

A290021U-90

A29002UL-90

32Pin PLCC

1

90

A290021UL-90

A29002UV-90

A290021UV-90

32Pin TSOP

32Pin DIP

A29002U-120

A290021U-120

A29002UL-120

32Pin PLCC

1

120

A290021UL-120

A29002UV-120

A290021UV-120

32Pin TSOP

32Pin DIP

A29002U-150

A290021U-150

A29002UL-150

32Pin PLCC

1

150

A290021UL-150

A29002UV-150

A290021UV-150

32Pin TSOP

(February, 2002, Version 1.0)

29

AMIC Technology, Inc.

A29002/A290021 Series

Package Information

P-DIP 32L Outline Dimensions

unit: inches/mm

D

32

17

1

16

E

1

Base Plane

Seating Plane

B

E

A

q

e

B1

Dimensions in inches

Dimensions in mm

Symbol

Min

-

Nom

Max

0.210

-

Min

Nom

Max

A

-

5.334

-

A1

A2

0.015

0.149

0.381

3.785

0.154

0.159

3.912

4.039

B

-

0.018

0.050

-

0.457

1.270

0.254

-

B1

C

D

-

0.010

1.650

1.645

1.655 41.783 41.91 42.037

0.547 13.64 13.767 13.894

E

E1

EA

e

0.537

0.590

0.630

-

0.542

0.600

0.650

0.100

0.130

-

0.610 14.986 15.240 15.494

0.670 16.002 16.510 17.018

-

2.540

3.302

-

L

0.120

0°

0.140

15°

3.048

0°

3.556

15°

q

Notes:

1. The maximum value of dimension D includes end flash.

2. Dimension E does not include resin fins.

(February, 2002, Version 1.0)

30

AMIC Technology, Inc.

A29002/A290021 Series

Package Information

PLCC 32L Outline Dimension

unit: inches/mm

HD

D

13

5

14

4

1

32

20

30

29

21

b

e

b

1

GE

y

q

GD

Dimensions in inches

Dimensions in mm

Symbol

Min

-

Nom

-

Max

0.134

-

Min

Nom

-

Max

A

A1

A2

b1

b

-

3.40

-

0.0185

0.105

0.026

0.016

0.008

0.547

0.447

0.044

0.490

0.390

0.585

0.485

0.075

-

0.47

2.67

0.66

0.41

0.20

13.89

11.35

1.12

12.45

9.91

14.86

12.32

1.91

-

0.110

0.028

0.018

0.010

0.550

0.450

0.050

0.510

0.410

0.590

0.490

0.090

-

0.115

0.032

0.021

0.014

0.553

0.453

0.056

0.530

0.430

0.595

0.495

0.095

0.003

10°

2.80

0.71

0.46

0.254

13.97

11.43

1.27

12.95

10.41

14.99

12.45

2.29

-

2.93

0.81

0.54

0.35

14.05

11.51

1.42

13.46

10.92

15.11

12.57

2.41

0.075

10°

C

D

E

e

GD

GE

HD

HE

L

y

q

0°

-

0°

-

Notes:

1. Dimensions D and E do not include resin fins.

2. Dimensions GD & GE are for PC Board surface mount pad pitch

design reference only.

(February, 2002, Version 1.0)

31

AMIC Technology, Inc.

A29002/A290021 Series

Package Information

TSOP 32L TYPE I (8 X 20mm) Outline Dimensions

unit: inches/mm

D

q

L

LE

HD

Detail "A"

y

S

b

Dimensions in inches

Dimensions in mm

Symbol

Min

-

Nom

Max

Min

Nom

Max

A

A₁

A₂

b

-

0.047

0.006

0.041

0.011

0.008

0.728

0.319

-

1.20

0.15

1.05

0.27

0.20

18.50

8.10

0.002

0.037

0.007

0.004

0.720

-

0.039

0.009

-

0.05

0.95

0.18

0.11

18.30

-

1.00

0.22

-

c

D

E

0.724

0.315

0.020 BSC

0.787

0.020

0.032

-

18.40

8.00

0.50 BSC

20.00

0.50

0.80

-

e

HD

L

0.779

0.795

0.024

-

19.80

20.20

0.60

-

0.016

0.40

LE

S

-

0.020

0.003

5°

0.50

0.08

5°

y

-

q

0°

Notes:

1. The maximum value of dimension D includes end flash.

2. Dimension E does not include resin fins.

3. Dimension S includes end flash.

(February, 2002, Version 1.0)

32

AMIC Technology, Inc.


型号：	A290021UV-150
厂家：	AMIC TECHNOLOGY
描述：	256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K ×8位CMOS 5.0伏只，引导扇区闪存闪存
文件：	总32页 (文件大小：314K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

A290021UV-150 [AMICC]

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