AME8815AEBT475_技术文档

AME, Inc.

AME8815

1.5A CMOS LDO

nGeneral Description

nFeatures

The AME8815 family of linear regulators feature low

quiescent current (45µA typ.) with low dropout voltage,

making them ideal for battery applications. It is available

in D²PAK and TO-220 packages. The space-efficient

SOT-223 and DPAK package are attractive for "Pocket"

and "Hand Held" applications.

lVery Low Dropout Voltage

lGuaranteed 1.5A Output

lAccurate to within 1.5%

l45µA Quiescent Current Typically

lOver-Temperature Shutdown

lCurrent Limiting

Output voltages are set at the factory and trimmed to

1.5% accuracy.

lShort Circuit Current Fold-back

lSpace-Efficient DPAK or SOT223 Package

lLow Temperature Coefficient

These rugged devices have both Thermal Shutdown,

and Current Fold-back to prevent device failure under

the "Worst" of operating conditions.

The AME8815 is stable with an output capacitance of

4.7µF or greater.

nApplications

lInstrumentation

lPortable Electronics

lWireless Devices

lPC Peripherals

nFunctional Block Diagram

lBattery Powered Widgets

IN

O U T

Overcurrent

Shutdown

Thermal

Shutdown

nTypical Application

R1

OUT

IN

AME8815

OUT

IN

GND

AMP

C2

C1

5V

4.7µF

µ

1 F

R2

1.215V

G N D

1

AME, Inc.

1.5A CMOS LDO

AME8815

nPin Configuration

SOT-223 Top View

1. V

1. GND

IN

2. GND (heat sink)

2. V

3. V

(heat sink)

OUT

IN

3. V

OUT

1

2

3

1

2

3

AME8815BEGTXXX

AME8815AEGTXXX

TO-252 (DPAK-2) Top View

1. GND

1. V

IN

2. V

(heat sink)

2. GND (heat sink)

OUT

3. V

IN

OUT

1

2

3

1

2

3

AME8815BECSXXX

AME8815AECSXXX

TO-220 Top View

1. GND

1. V

IN

2. V

(heat sink)

OUT

IN

2. GND (heat sink)

3. V

OUT

3

2

1

3

2

1

AME8815AEBTXXX

AME8815BEBTXXX

2

AME, Inc.

AME8815

1.5A CMOS LDO

n Ordering Information

AME8815 X X X X XXX

Voltage

150:

V=1.5V

V=1.8V

V=2.5V

V=3.3V

V=4.75V

V=5.0V

180:

250:

330:

475:

500:

Number of Pin

S:

T:

2

3

Package

B:

C:

D:

TO-220

TO-252

TO-263

G: SOT-223

Operating Temperature

C:

E:

M:

0^oC to

70^oC

85^oC

-40^oC to

-40^oC to 125^oC

Pin Configuration

Please consult AME sales office or authorized Rep./Distr. For other output voltage and package type availbility.

3

AME, Inc.

1.5A CMOS LDO

AME8815

n Ordering Information

Part Number

Marking

Output Package Operating Temp.

AME8815

AME8815AEBT150 AEBT150

yyww

AME8815

AME8815AEBT180 AEBT180

yyww

AME8815

AME8815AEBT250 AEBT250

yyww

AME8815

AME8815AEBT330 AEBT330

yyww

AME8815

AME8815AEBT475 AEBT475

yyww

AME8815

AME8815AEBT500 AEBT500

yyww

AME8815

AME8815AECS150 AECS150

yyww

AME8815

AME8815AECS180 AECS180

-40^oC to +85^oC

1.50

1.80

2.50

3.30

4.75

5.00

1.50

1.80

2.50

3.30

4.75

5.00

TO-220

TO-252

yyww

AME8815

AME8815AECS250 AECS250

yyww

AME8815

AME8815AECS330 AECS330

yyww

AME8815

AME8815AECS475 AECS475

yyww

AME8815

AME8815AECS500 AECS500

yyww

4

AME, Inc.

AME8815

1.5A CMOS LDO

n Ordering Information

Part Number

Marking

Output Package Operating Temp.

AME8815

AME8815AEDS150 AEDS150

yyww

AME8815

AME8815AEDS180 AEDS180

yyww

AME8815

AME8815AEDS250 AEDS250

yyww

AME8815

AME8815AEDS330 AEDS330

-40^oC to +85^oC

1.50

1.80

2.50

3.30

4.75

5.00

1.50

1.80

2.50

3.30

4.75

5.00

TO-263

yyww

AME8815

AME8815AEDS475 AEDS475

yyww

AME8815

AME8815AEDS500 AEDS500

yyww

TO-263

AME8815AEGT150

AME8815AEGT180

AME8815AEGT250

AME8815AEGT330

AME8815AEGT475

AME8815AEGT500

ASPww

AQUww

APRww

AKCww

AQRww

AQSww

SOT-223

5

AME, Inc.

1.5A CMOS LDO

AME8815

n Ordering Information

Part Number

Marking

Output Package Operating Temp.

AME8815

AME8815BEBT150 BEBT150

yyww

AME8815

AME8815BEBT180 BEBT180

yyww

AME8815

AME8815BEBT250 BEBT250

yyww

AME8815

AME8815BEBT330 BEBT330

yyww

AME8815

AME8815BEBT475 BEBT475

yyww

AME8815

AME8815BEBT500 BEBT500

yyww

AME8815

AME8815BECS150 BECS150

yyww

AME8815

AME8815BECS180 BECS180

-40^oC to +85^oC

1.50

1.80

2.50

3.30

4.75

5.00

1.50

1.80

2.50

3.30

4.75

5.00

TO-220

TO-252

yyww

AME8815

AME8815BECS250 BECS250

yyww

AME8815

AME8815BECS330 BECS330

yyww

AME8815

AME8815BECS475 BECS475

yyww

AME8815

AME8815BECS500 BECS500

yyww

6

AME, Inc.

AME8815

1.5A CMOS LDO

n Ordering Information

Part Number

Marking

Output Package Operating Temp.

AME8815

AME8815BEDS150 BEDS150

yyww

AME8815

AME8815BEDS180 BEDS180

yyww

AME8815

AME8815BEDS250 BEDS250

yyww

AME8815

AME8815BEDS330 BEDS330

-40^oC to +85^oC

1.50

1.80

2.50

3.30

4.75

5.00

1.50

1.80

2.50

3.30

4.75

5.00

TO-263

yyww

AME8815

AME8815BEDS475 BEDS475

yyww

AME8815

AME8815BEDS500 BEDS500

yyww

TO-263

AME8815BEGT150

AME8815BEGT180

AME8815BEGT250

AME8815BEGT330

AJYww

AJZww

AKBww

AKDww

SOT-223

AME8815BEGT475 AMNww

AME8815BEGT500

AQTww

7

AME, Inc.

1.5A CMOS LDO

AME8815

Absolute Maximum Ratings:

n

Parameter

Maximum

Unit

V

Input Voltage

8

Output Current

Output Voltage

ESD Classification

mA

V

P_D/ (V_IN- V_O)

GND - 0.3 to V_IN+ 0.3

B

Caution: Stress above the listed absolute maximum rating may cause permanet damage to the device.

Recommended operating Conditions:

n

Parameter

Rating

Unit

^oC

Ambient Temperature Range

Junction Temperature

-40 to +85

^oC

-40 to +125

Thermal Information

n

Parameter

Maximum

160

Unit

SOT-223

TO-252 (DPAK)

D²PAK

90

^oC / W

Thermal Resistance (

θ_ja

)

60

TO-220

50

SOT-223

625

TO-252 (DPAK)

1200

2800

3000

150

Internal Power Dissipation (P_D)

mW

( T = 100^oC)

D²PAK

TO-220

∆

^oC

Maximum Junction Temperature

Maximum Lead Temperature ( 10 Sec)

300

8

AME, Inc.

AME8815

1.5A CMOS LDO

nElectrical Specifications

V _IN= V _O(nom)+2V, TA = 25^oC unless otherwise noted

Test Condition

Parameter

Input Voltage

Symbol

V_IN

Min

Note 1

-1.5

Typ Max Units

7

V

Output Voltage Accuracy

V_O

I_O=1mA

1.5

%

1.4V<V_O(NOM)<=2.0V

1300

800

600

I_O=1.5A

See

chart

Dropout Voltage

V_DROPOUT

2.0V<V_O(NOM)<=2.8V

2.8V<V_O(NOM)

mV

V_O=V_ONOM-2.0%

Output Current

I_O

I_LIM

I_SC

I_Q

V_O>1.2V

1500

mA

Current Limit

V_O>1.2V

V_O<0.4V

1500 2000

Short Circuit Current

Quiescent Current

Ground Pin Current

750

I_O=0mA

45

70

A

µ

I_GND

I_O=1mA to 1500mA

A

µ

V_O< 2.0V

-0.15

0.15

0.1

0.4

1

%

I_O=1mA

Line Regulation

REG_LINE

4.0V > V_O>= 2.0V

4.0V <= V_O

-0.1

-0.4

-1

0.02

V_IN=V_O+1 to V_O+2

Load Regulation

REG_LOAD

OTS

I_O=1mA to 1500mA

0.2

150

30

^oC

Over Temerature Shutdown

Over Temerature Hysterisis

V_OTemperature Coefficient

OTH

ppm/^oC

TC

30

f=1kHz

f=10kHz

f=100kHz

50

I_O=100mA

Power Supply Rejection

PSRR

20

dB

C =4.7 F

µ

O

15

f=10Hz to 100kHz

I_O=10mA

Output Voltage Noise

eN

Co=4.7 F

30

Vrms

µ

Note1:V_IN(min)=V_OUT+V_DROPOUT

9

AME, Inc.

1.5A CMOS LDO

AME8815

nDetailed Description

nExternal Capacitors

The AME8815 family of CMOS regulators contain a

PMOS pass transistor, voltage reference, error ampli-

fier, over-current protection, and thermal shutdown.

The AME8815 is stable with an output capacitor to

ground of 4.7µF or greater. Ceramic capacitors have the

lowest ESR, and will offer the best AC performance.

Conversely, Aluminum Electrolytic capacitors exhibit

the highest ESR, resulting in the poorest AC response.

Unfortunately, large value ceramic capacitors are com-

paratively expensive. One option is to parallel a 0.1µF

ceramic capacitor with a 10µF Aluminum Electrolytic.

The benefit is low ESR, high capacitance, and low over-

all cost.

The P-channel pass transistor receives data from the

error amplifier, over-current shutdown, and thermal pro-

tection circuits. During normal operation, the error am-

plifier compares the output voltage to a precision refer-

ence. Over-current and Thermal shutdown circuits be-

come active when the junction temperature exceeds

o

150 C, or the current exceeds 2.2A. During thermal shut-

down, the output voltage remains low. Normal operation

is restored when the junction temperature drops below

120 C.

A second capacitor is recommended between the input

and ground to stabilize Vin. The input capacitor should

be at least 0.1µF to have a beneficial effect.

o

The AME8815 behaves like a current source when the

load reaches 2.2A. However, if the load impedance

drops below 0.3 ohms, the current drops back to 600mA

to prevent excessive power dissipation. Normal op-

eration is restored when the load resistance exceeds

0.75 ohms.

All capacitors should be placed in close proximity to

the pins. A "Quiet" ground termination is desirable.

This can be achieved with a "Star" connection.

10

AME, Inc.

AME8815

1.5A CMOS LDO

Dropout Voltage vs. I _LOAD

Dropout Voltage vs. V_OUT

1.2

1

0.8

0.6

0.4

0.2

0

I_{L O A D}=1.5A

V_{O U T}

=

1.5

1.8

2.0

0.8

0.6

0.4

0.2

0

I_{L O A D}=1.0A

2.1

2.8

I_{L O A D}=0.5A

3.3

0

2

4

6

8

0

0.3

0.6

0.9

1.2

1.5

1.8

I_LOAD(A)

V_OUT(V)

Quiescent Current vs. Temperature

Ground Current vs. V_IN

50

41

39

37

35

33

31

29

27

25

45

40

35

30

25

20

15

10

I_{O U T}= 140mA

V_{O U T}= 1.5V

-45

-5

25

55

85

115

2

3

4

5

6

7

8

Temperature (⁰C)

V_IN(V)

Ground Current vs. Load Current

38.5

38

37.5

37

V_IN= 2.5V

V_OUT= 1.5V

36.5

36

35.5

35

34.5

0

0.25

0.5

0.75

1

1.25

1.5

Load Current (mA)

11

AME, Inc.

1.5A CMOS LDO

AME8815

V_OUTvs. Temperature (2.5V)

Load Regulation vs. Temperature

2.500

2.495

2.490

2.485

2.480

2.475

0.30

0.25

0.20

0.15

0.10

0.05

0.00

-45

-5

25

55

85

115

-45

-5

25

55

85

115

Temperature (⁰C)

Dropout Voltage vs. Load Current

115⁰C

85⁰C

55⁰C

25⁰C

-5⁰C

(2.5V)

400

350

300

250

200

150

100

50

-45⁰C

0

0.3

0.6

0.9

1.2

1.5

Load Current (A)

12

AME, Inc.

AME8815

1.5A CMOS LDO

Transient Line Response

Load Step 40mA to 1.5A

0A

C_IN= 4.7

C_OUT= 4.7

T_R= T_F= 1

VOUT = 1.5V

µF

C_IN= 4.7

C_OUT= 4.7

V_IN= 4.0V

V_OUT= 1.8V

µF

µ

F

µS

0V

Time (20 S/DIV)

µ

Time 500 S/DIV

Current Limit Vs. V_IN

Current Limit Response

3

2.8

2.6

2.4

2.2

2

V_IN= 5V

C_IN= 4.7

C_{O U T}= 4.7

V_{O U T}= 1.8V

µ

F

C_IN= 4.7

µF

C_{O U T}= 4.7

µ

F

0V

0A

1.8

1.6

1.4

1.2

1

I_LIM

I_{S C}

2

3

4

5

6

7

8

Time 1mS/DIV

V_IN(V)

Short Circuit Current VS. V_IN

Overtemperature Shutdown

1.6

1.4

1.2

1

C_IN= 4.7

µF

C_{O U T}= 4.7

µF

0A

V_IN= 4V

0.8

0.6

0.4

0.2

0

C_IN= 4.7

C_{O U T}= 4.7

µF

0V

2

3

4

5

6

7

8

Time 100mS/DIV

V_IN(V)

13

AME, Inc.

1.5A CMOS LDO

AME8815

Stability vs. ESR vs I _LOAD

Stability vs. ESR vs I_LOAD

10000

1000

100

10

10000

1000

100

10

Unstable Region

C_L=5 F

µ

C_L=2 F

µ

1

Stable Region

0.1

Untested Region

0.01

0

Untested Region

0.01

250

500

750

1000 1250 1500

0

250

500

750

1000 1250 1500

ILOAD (mA)

Stability vs. ESR vs I _LOAD

10000

1000

100

10

Unstable Region

µ

C_L=10 F

1

Stable Region

0.1

0.01

Untested Region

0.001

0

250

500

750

1000 1250 1500

ILOAD (mA)

14

AME, Inc.

AME8815

1.5A CMOS LDO

nPackage Dimension

TO-220

MILLIMETERS

INCHES

SYMBOLS

MIN

5.58

3.56

0.51

0.31

9.65

3.53

0.51

1.14

2.29

12.70

14.22

MAX

7.49

4.83

1.40

1.14

10.67

4.09

1.14

1.78

2.79

14.73

16.51

MIN

MAX

0.2949

0.1900

0.0550

0.0450

0.4200

0.1610

0.0450

0.0700

0.1100

0.5800

0.6500

A

C

D

E

G

I

0.2197

0.1400

0.0200

0.0120

0.3800

0.1390

0.0200

0.0449

0.0900

0.5000

0.5600

K

M

N

O

P

SOT-223

MILLIMETERS

INCHES

SYMBOLS

α

MIN

1.50

0.02

0.60

2.90

0.24

6.30

3.30

MAX

MIN

MAX

A

A₁

B

1.80

0.10

0.84

3.15

0.38

6.71

3.71

0.0591

0.0008

0.0236

0.1140

0.0094

0.2480

0.1299

0.0709

0.0039

0.0330

0.1240

0.0150

0.2640

0.1460

B₁

C

D

E

e

2.30 BSC

4.60 BSC

6.70 7.30

0.0906 BSC

0.1811 BSC

0.2638 0.2874

e₁

H

L

0.91 MIN

2.00 MAX

0.06 BSC

0.0358 MIN

0.0787 MAX

0.0024 BSC

L₁

L₂

a

0^o

10^o

0^o

10^o

15

AME, Inc.

1.5A CMOS LDO

AME8815

nPackage Dimension

TO-252

MILLIMETERS

INCHES

SYMBOLS

Top View

Side View

MIN

0.40

1.60

0.50

0.40

6.35

5.33

2.20

1.98

0.61

5.04

0.40

MAX

MIN

MAX

0.0236

0.0787

-

A

B

C

D

E

F

G

H

J

0.60

2.00

-

0.0157

0.0630

0.0197

0.0157

0.2500

0.2098

0.0866

0.0780

0.0240

0.1984

0.0157

0.60

6.80

6.30

3.00

2.50

0.97

5.64

2.03

0.0236

0.2677

0.2480

0.1181

0.0984

0.0382

0.2220

0.0799

K

L

1

2

3

* : Typical value

NOTES :

1. CONTROLLING DIMENSION : MILLIMETERS.

2. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

Or

TO-252

MILLIMETERS

INCHES

SYMBOLS

MIN

0.40

1.60

0.50

0.40

6.35

5.33

2.20

1.98

0.61

5.04

0.40

MAX

MIN

MAX

0.0236

0.0787

-

Top View

Side View

A

B

C

D

E

F

G

H

J

0.60

2.00

-

0.0157

0.0630

0.0197

0.0157

0.2500

0.2098

0.0866

0.0780

0.0240

0.1984

0.0157

0.60

6.80

6.30

3.00

2.50

0.97

5.64

2.03

0.0236

0.2677

0.2480

0.1181

0.0984

0.0382

0.2220

0.0799

K

L

1

2

3

* : Typical value

NOTES :

1. CONTROLLING DIMENSION : MILLIMETERS.

2. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

16

www.ame.com.tw

E-Mail: info@ame.com.tw

Life Support Policy:

These products of AME, Inc. are not authorized for use as critical components in life-support devices or

systems, without the express written approval of the president

of AME, Inc.

AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and

advises its customers to obtain the latest version of relevant information.

AME, Inc. , January 2002

Document: 2013-DS8815-E

U.S. Headquarters

Corporate Headquarters

AME, Inc.

2F, 189 Kang-Chien Road, Nei-Hu District

Taipei 114, Taiwan, R.O.C.

Tel : 886 2 2627-8687

Analog Microelectronics, Inc.

3100 De La Cruz Blvd. Suite 201

Santa Clara, CA. 95054-2046

Tel : (408) 988-2388

Fax: (408) 988-2489

Fax: 886 2 2659-2989


型号：	AME8815AEBT475
厂家：	ANALOG MICROELECTRONICS
描述：	1.5A CMOS LDO 1.5A CMOS LDO 稳压器电源电路
文件：	总17页 (文件大小：115K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AME8815AEBT475 [AME]

相关型号：

AME8815AEBT475Z

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AME8815AECS190

AME8815AECS190Z

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