L320ML11PF [AMD]
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control; 32兆位(2M ×16位/ 4米×8位) MirrorBit⑩ 3.0伏只统一部门快闪记忆体与VersatileI / O⑩控制型号: | L320ML11PF |
厂家: | AMD |
描述: | 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
文件: | 总59页 (文件大小:1138K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Am29LV320MH/L
Data Sheet
RETIRED
PRODUCT
This product has been retired and is not available for designs. For new and current designs,
S29GL032A supersedes Am29LV320MH/L and is the factory-recommended migration path. Please
refer to the S29GL032A datasheet for specifications and ordering information. Availability of this
document is retained for reference and historical purposes only.
The following document contains information on Spansion memory products. Although the docu-
ment is marked with the name of the company that originally developed the specification, Spansion
will continue to offer these products to existing customers.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appro and
changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
Spansion continues to support existing part numbers beginning with “Am” and “MBM”. To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 26517 Revision B Amendment 4 Issue Date January 31, 2007
THIS PAGE LEFT INTENTIONALLY BLANK.
DATA SHEET
Am29LV320MH/L
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit™
3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control
This product has been retired and is not available for designs. For new and current designs, S29GL032A supersedes Am29LV320M H/L and is the factory-recommended migration path.
Please refer to the S29GL032A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
■
■
Single power supply operation
— 3 V for read, erase, and program operations
■
■
Low power consumption (typical values at 3.0 V, 5
MHz)
VersatileI/O™ control
— 13 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
— Device generates data output voltages and tolerates
data input voltages on the DQ inputs/outputs as
determined by the voltage on the VIO pin; operates
from 1.65 to 3.6 V
Package options
■
■
Manufactured on 0.23 µm MirrorBit process
technology
— 56-pin TSOP
— 64-ball Fortified BGA
Secured Silicon Sector region
SOFTWARE & HARDWARE FEATURES
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
■
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— May be programmed and locked at the factory or by
the customer
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
■
■
Flexible sector architecture
— Unlock Bypass Program command reduces overall
multiple-word programming time
— Sixty-four 32 Kword/64-Kbyte sectors
Compatibility with JEDEC standards
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
■
Hardware features
■
■
Minimum 100,000 erase cycle guarantee per sector
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
20-year data retention at 125°C
— Temporary Sector Unprotect: VID-level method of
changing code in locked sectors
PERFORMANCE CHARACTERISTICS
■
High performance
— WP#/ACC input:
— 90 ns access time
Write Protect input (WP#) protects first or last sector
regardless of sector protection settings
ACC (high voltage) accelerates programming time for
higher throughput during system production
— 25 ns page read times
— 0.5 s typical sector erase time
— 15 µs typical effective write buffer word programming
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word/byte updates
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
Publication# 26517 Rev: B Amendment/4
Issue Date: January 31, 2007
D A T A S H E E T
GENERAL DESCRIPTION
The Am29LV320MH/L is a 32 Mbit, 3.0 volt single
power supply flash memory device organized as
2,097,152 words or 4,194,304 bytes. The device has
an 8-bit/16-bit bus and can be programmed either in
the host system or in standard EPROM programmers.
the same voltage level that is asserted on the VIO pin.
Refer to the Ordering Information section for valid VIO
options.
Hardware data protection measures include a low
VCC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of sectors of memory.
This can be achieved in-system or via programming
equipment.
An access time of 90, 100, 110, or 120 ns is available.
Note that each access time has a specific operating
voltage range (VCC) and an I/O voltage range (VIO), as
specified in the Product Selector Guide and the Order-
ing Information sections. The device is offered in a
56-pin TSOP or 64-ball Fortified BGA package. Each
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
The Erase Suspend/Erase Resume feature allows
the host system to pause an erase operation in a given
sector to read or program any other sector and then
complete the erase operation. The Program Sus-
pend/Program Resume feature enables the host sys-
tem to pause a program operation in a given sector to
read any other sector and then complete the program
operation.
Each device requires only a single 3.0 volt power
supply for both read and write functions. In addition to
a VCC input, a high-voltage accelerated program
(ACC) feature provides shorter programming times
through increased current on the WP#/ACC input. This
feature is intended to facilitate factory throughput dur-
ing system production, but may also be used in the
field if desired.
The hardware RESET# pin terminates any operation
in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the device using standard
microprocessor write timing. Write cycles also inter-
nally latch addresses and data needed for the pro-
gramming and erase operations.
The device reduces power consumption in the
standby mode when it detects specific voltage levels
on CE# and RESET#, or when addresses have been
stable for a specified period of time.
The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
The Write Protect (WP#) feature protects the first or
last sector by asserting a logic low on the WP#/ACC
pin. The protected sector will still be protected even
during accelerated programming.
Device programming and erasure are initiated through
command sequences. Once a program or erase oper-
ation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle) status bits or
monitor the Ready/Busy# (RY/BY#) output to deter-
mine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces com-
mand sequence overhead by requiring only two write
cycles to program data instead of four.
The Secured Silicon Sector provides a
128-word/256-byte area for code or data that can be
permanently protected. Once this sector is protected,
no further changes within the sector can occur.
AMD MirrorBit flash technology combines years of
Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effec-
tiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The
data is programmed using hot electron injection.
The VersatileI/O™ (VIO) control allows the host sys-
tem to set the voltage levels that the device generates
and tolerates on the CE# control input and DQ I/Os to
2
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
MIRRORBIT 32 MBIT DEVICE FAMILY
Device
Bus
Sector Architecture
Packages
VIO
RY/BY#
WP#, ACC
WP# Protection
40-pin TSOP (std. & rev. pinout),
48-ball FBGA
LV033MU
x8
Uniform (64 Kbyte)
Yes
Yes
ACC only
No WP#
Boot (8 x 8 Kbyte
at top & bottom)
48-pin TSOP, 48-ball Fine-pitch BGA,
64-ball Fortified BGA
2 x 8 Kbyte
top or bottom
LV320MT/B
LV320MH/L
x8/x16
x8/x16
No
Yes
Yes
WP#/ACC pin
WP#/ACC pin
56-pin TSOP (std. & rev. pinout),
64 Fortified BGA
1 x 64 Kbyte
high or low
Uniform (64 Kbyte)
Yes
RELATED DOCUMENTS
To download related documents, click on the following
links or go to www.amd.com→Flash Memory→Prod-
uct Information→MirrorBit→Flash Information→Tech-
nical Documentation.
Implementing a Common Layout for AMD MirrorBit
and Intel StrataFlash Memory Devices
Migrating from Single-byte to Three-byte Device IDs
AMD MirrorBit™ White Paper
MirrorBit™ Flash Memory Write Buffer Programming
and Page Buffer Read
January 31, 2007 26517B4
Am29LV320MH/L
3
D A T A S H E E T
TABLE OF CONTENTS
Figure 7. Erase Operation .............................................................. 30
Table 10. Command Definitions (x16 Mode, BYTE# = VIH) ........... 31
Table 11. Command Definitions (x8 Mode, BYTE# = VIL).............. 32
Write Operation Status. . . . . . . . . . . . . . . . . . . . . 33
DQ7: Data# Polling ................................................................. 33
Figure 8. Data# Polling Algorithm .................................................. 33
DQ6: Toggle Bit I .................................................................... 34
Figure 9. Toggle Bit Algorithm ........................................................ 35
DQ2: Toggle Bit II ................................................................... 35
Reading Toggle Bits DQ6/DQ2 ............................................... 35
DQ5: Exceeded Timing Limits ................................................ 36
DQ3: Sector Erase Timer ....................................................... 36
DQ1: Write-to-Buffer Abort ..................................................... 36
Table 12. Write Operation Status................................................... 36
Figure 10. Maximum Negative Overshoot Waveform ................... 37
Figure 11. Maximum Positive Overshoot Waveform ..................... 37
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 37
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 38
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 12. Test Setup .................................................................... 39
Table 13. Test Specifications......................................................... 39
Key to Switching Waveforms. . . . . . . . . . . . . . . . 39
Figure 13. Input Waveforms and
Product Selector Guide. . . . . . . . . . . . . . . . . . . . . 5
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 6
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information. . . . . . . . . . . . . . . . . . . . . . . 9
Device Bus Operations . . . . . . . . . . . . . . . . . . . . 10
Table 1. Device Bus Operations ..................................................... 10
VersatileIO™ (VIO) Control ..................................................... 10
Requirements for Reading Array Data ................................... 11
Page Mode Read ............................................................................11
Writing Commands/Command Sequences ............................ 11
Write Buffer .....................................................................................11
Accelerated Program Operation ......................................................11
Autoselect Functions .......................................................................11
Automatic Sleep Mode ........................................................... 12
RESET#: Hardware Reset Pin ............................................... 12
Output Disable Mode .............................................................. 12
Table 2. Sector Address Table........................................................ 13
Table 3. Autoselect Codes, (High Voltage Method) ....................... 15
Sector Group Protection and Unprotection ............................. 16
Table 4. Sector Group Protection/Unprotection Address Table ..... 16
Temporary Sector Group Unprotect ....................................... 17
Figure 1. Temporary Sector Group Unprotect Operation ................17
Figure 2. In-System Sector Group Protect/Unprotect Algorithms ...18
Secured Silicon Sector Flash Memory Region ....................... 19
Table 5. Secured Silicon Sector Contents ...................................... 19
Figure 3. Secured Silicon Sector Protect Verify ..............................20
Hardware Data Protection ...................................................... 20
Low VCC Write Inhibit .....................................................................20
Write Pulse “Glitch” Protection ........................................................20
Logical Inhibit ..................................................................................20
Power-Up Write Inhibit ....................................................................20
Common Flash Memory Interface (CFI) . . . . . . . 20
Table 6. CFI Query Identification String ..........................................21
Table 7. System Interface String..................................................... 21
Table 8. Device Geometry Definition ..............................................22
Table 9. Primary Vendor-Specific Extended Query ........................23
Command Definitions . . . . . . . . . . . . . . . . . . . . . 24
Reading Array Data ................................................................ 24
Reset Command ..................................................................... 24
Autoselect Command Sequence ............................................ 24
Enter Secured Silicon Sector/Exit Secured Silicon Sector
Measurement Levels ...................................................................... 39
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 40
Read-Only Operations ........................................................... 40
Figure 14. Read Operation Timing ................................................. 40
Figure 15. Page Read Timings ...................................................... 41
Hardware Reset (RESET#) .................................................... 42
Figure 16. Reset Timings ............................................................... 42
Erase and Program Operations .............................................. 43
Figure 17. Program Operation Timings .......................................... 44
Figure 18. Accelerated Program Timing Diagram .......................... 44
Figure 19. Chip/Sector Erase Operation Timings .......................... 45
Figure 20. Data# Polling Timings (During Embedded Algorithms) . 46
Figure 21. Toggle Bit Timings (During Embedded Algorithms) ...... 47
Figure 22. DQ2 vs. DQ6 ................................................................. 47
Temporary Sector Unprotect .................................................. 48
Figure 23. Temporary Sector Group Unprotect Timing Diagram ... 48
Figure 24. Sector Group Protect and Unprotect Timing Diagram .. 49
Alternate CE# Controlled Erase and Program Operations ..... 50
Figure 25. Alternate CE# Controlled Write (Erase/Program)
Operation Timings .......................................................................... 51
Erase And Programming Performance. . . . . . . . 52
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 52
TSOP Pin and BGA Package Capacitance . . . . . 53
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 54
TS056/TSR056—56-Pin Standard and Reverse Pinout Thin
Small Outline Package (TSOP) .............................................. 54
LAA064—64-Ball Fortified Ball Grid Array (FBGA) 13 x 11 mm
Package .................................................................................. 55
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 56
Command Sequence .............................................................. 25
Word/Byte Program Command Sequence ............................. 25
Unlock Bypass Command Sequence ..............................................25
Write Buffer Programming ...............................................................25
Accelerated Program ......................................................................26
Figure 4. Write Buffer Programming Operation ...............................27
Figure 5. Program Operation ..........................................................28
Program Suspend/Program Resume Command Sequence ... 28
Figure 6. Program Suspend/Program Resume ...............................29
Chip Erase Command Sequence ........................................... 29
Sector Erase Command Sequence ........................................ 29
Erase Suspend/Erase Resume Commands ........................... 30
4
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
PRODUCT SELECTOR GUIDE
Part Number
Am29LV320MH/L
112R
90R
(VIO
3.0–3.6 V)
101R
(VIO
2.7–3.6 V)
120R
(VIO =
1.65–3.6 V)
VCC
3.0–3.6 V
=
=
=
(VIO
=
1.65–3.6 V)
Speed Option
101
112
120
VCC = 2.7–3.6 V
(VIO
=
(VIO
=
(VIO =
2.7–3.6 V)
1.65–3.6 V)
1.65–3.6 V)
Max. Access Time (ns)
Max. CE# Access Time (ns)
Max. Page access Time (tPACC
Max. OE# Access Time (ns)
Note:
90
90
25
25
100
110
110
120
120
100
)
30
30
30
40
40
30
30
40
40
30
1. See AC Characteristics for full specifications.
2. For the Am29LV320MH/L device, the last numeric digit in the speed option (e.g. 90R, 101, 112, 120) is used for internal purposes
only. Please use OPNs as listed when placing orders.
BLOCK DIAGRAM
DQ0–DQ15 (A-1)
RY/BY#
VCC
VSS
Sector Switches
VIO
Erase Voltage
Generator
Input/Output
Buffers
RESET#
WE#
WP#/ACC
BYTE#
State
Control
Command
Register
PGM Voltage
Generator
Data
Latch
Chip Enable
Output Enable
Logic
STB
CE#
OE#
Y-Decoder
X-Decoder
Y-Gating
STB
VCC Detector
Timer
Cell Matrix
A20–A0
January 31, 2007 26517B4
Am29LV320MH/L
5
D A T A S H E E T
CONNECTION DIAGRAMS
NC
NC
1
2
56 NC
55 NC
A15
A14
A13
A12
A11
A10
A9
3
54 A16
53 BYTE#
4
VSS
52
5
6
51 DQ15/A-1
7
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
8
56-Pin Standard TSOP
9
A8
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
A19
A20
WE#
RESET#
NC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
OE#
VSS
A3
A2
CE#
A0
A1
NC 27
NC 28
30 NC
29 VIO
NC
NC
1
2
3
4
5
6
7
8
9
56 NC
55 NC
A16
54 A15
53 A14
52 A13
51 A12
50 A11
49 A10
48 A9
BYTE#
VSS
DQ15/A-1
DQ7
56-Pin Reverse TSOP
DQ14
DQ6
DQ13 10
DQ5 11
DQ12 12
DQ4 13
VCC 14
DQ11 15
DQ3 16
DQ10 17
DQ2 18
DQ9 19
DQ1 20
DQ8 21
DQ0 22
OE# 23
VSS 24
47 A8
46 A19
45 A20
44 WE#
43 RESET#
42 NC
41 WP#/ACC
40 RY/BY#
39 A18
38 A17
37 A7
36 A6
35 A5
34 A4
33 A3
CE# 25
A0 26
NC 27
VIO 28
32 A2
31 A1
30 NC
29 NC
6
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
CONNECTION DIAGRAMS
64-Ball Fortified BGA
Top View, Balls Facing Down
A8
B8
C8
D8
E8
F8
G8
NC
H8
NC
NC
NC
VIO
VSS
NC
NC
A7
B7
C7
D7
E7
F7
G7
H7
A13
A12
A14
A15
A16
BYTE# DQ15/A-1 VSS
A6
A9
B6
A8
C6
D6
E6
F6
G6
H6
DQ6
A10
A11
DQ7
DQ14
DQ13
A5
B5
C5
D5
E5
F5
G5
H5
WE# RESET#
NC
A19
DQ5
DQ12
VCC
DQ4
A4 B4
C4
D4
E4
F4
G4
H4
RY/BY# WP#/ACC A18
A20
DQ2
DQ10
DQ11
DQ3
A3
A7
B3
C3
A6
D3
A5
E3
F3
G3
H3
A17
DQ0
DQ8
DQ9
DQ1
A2
A3
B2
A4
C2
A2
D2
A1
E2
A0
F2
G2
H2
CE#
OE#
VSS
A1
B1
C1
D1
E1
F1
G1
NC
H1
NC
NC
NC
NC
NC
VIO
NC
The package and/or data integrity may be compromised
if the package body is exposed to temperatures above
150°C for prolonged periods of time.
Special Package Handling Instructions
Special handling is required for Flash Memory products
in molded packages (TSOP, BGA, SSOP, PDIP, PLCC).
January 31, 2007 26517B4
Am29LV320MH/L
7
D A T A S H E E T
PIN DESCRIPTION
LOGIC SYMBOL
A20–A0
= 21 Address inputs
21
DQ14–DQ0 = 15 Data inputs/outputs
A20–A0
16 or 8
DQ15/A-1
= DQ15 (Data input/output, word mode),
DQ15–DQ0
(A-1)
CE#
OE#
WE#
A-1 (LSB Address input, byte mode)
CE#
OE#
WE#
= Chip Enable input
= Output Enable input
WP#/ACC
RESET#
VIO
= Write Enable input
WP#/ACC = Hardware Write Protect input/Pro-
gramming Acceleration input
RY/BY#
RESET#
RY/BY#
BYTE#
VCC
= Hardware Reset Pin input
= Ready/Busy output
BYTE#
= Selects 8-bit or 16-bit mode
= 3.0 volt-only single power supply
(see Product Selector Guide for
speed options and voltage
supply tolerances)
VIO
VSS
NC
= Output Buffer power
= Device Ground
= Pin Not Connected Internally
8
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Am29LV320M
H
120R
PC
I
TEMPERATURE RANGE
I
=
=
Industrial (–40°C to +85°C)
Industrial (–40°C to +85°C) with Pb-free Packages
F
PACKAGE TYPE
E
=
=
=
56-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 056)
56-Pin Thin Small Outline Package (TSOP) Reverse Pinout (TSR056)
F
PC
64-Ball Fortified Ball Grid Array
1.0 mm pitch, 13 x 11 mm package (LAA064)
SPEED OPTION
See Product Selector Guide and Valid Combinations
SECTOR ARCHITECTURE AND WP# PROTECTION (WP# = VIL)
H
L
=
=
Uniform sector device, highest address sector protected
Uniform sector device, lowest address sector protected
DEVICE NUMBER/DESCRIPTION
Am29LV320M
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit™ Uniform Sector Flash Memory
with VersatileIO™ Control, 3.0 Volt-only Read, Program, and Erase
Valid Combinations for
TSOP Package
Speed
(ns)
VIO
Range
VCC
Range
Valid Combinations for
Fortified BGA Package
Speed
(ns)
VIO
VCC
Range Range
Am29LV320MH90R,
Am29LV320ML90R
Package
Marking
90
3.0–3.6 V
2.7–3.6 V
1.65–3.6 V
1.65–3.6 V
2.7–3.6 V
1.65–3.6 V
1.65–3.6 V
3.0–3.6 V
Order Number
Am29LV320MH101,
Am29LV320ML101
Am29LV320MH90R,
Am29LV320ML90R
L320MH90N,
L320ML90N
3.0–
3.6 V
3.0–
3.6 V
100
110
120
100
110
120
90
Am29LV320MH112,
Am29LV320ML112
Am29LV320MH101,
Am29LV320ML101
L320MH01P,
L320ML01P
2.7–
3.6 V
2.7–3.6 V
100
110
120
100
110
120
EI,
FI,
EF
Am29LV320MH120,
Am29LV320ML120
Am29LV320MH112,
Am29LV320ML112
L320MH11P,
L320ML11P
1.65–
3.6 V
2.7–
3.6 V
Am29LV320MH101R,
Am29LV320ML101R
Am29LV320MH120,
Am29LV320ML120
PCI, L320MH12P, I,
PCF L320ML12P
1.65–
3.6 V
F
Am29LV320MH112R,
Am29LV320ML112R
Am29LV320MH101R,
Am29LV320ML101R
L320MH01N,
L320ML01N
2.7–
3.6 V
3.0–3.6 V
Am29LV320MH120R,
Am29LV320ML120R
Am29LV320MH112R,
Am29LV320ML112R
L320MH11N,
L320ML11N
1.65–
3.6 V
3.0–
3.6 V
Am29LV320MH120R,
Am29LV320ML120R
L320MH12N,
L320ML12N
1.65–
3.6 V
Valid Combinations
Valid Combinations list configurations planned to be supported in vol-
ume for this device. Consult the local AMD sales office to confirm
availability of specific valid combinations and to check on newly re-
leased combinations.
Note:
For the Am29LV320MH/L device, the last numeric digit in the speed option (e.g.
90R, 101, 112, 120) is used for internal purposes only. Please use OPNs as
listed when placing orders.
January 31, 2007 26517B4
Am29LV320MH/L
9
D A T A S H E E T
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is a latch used to store the com-
mands, along with the address and data information
needed to execute the command. The contents of the
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the in-
puts and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Table 1. Device Bus Operations
DQ8–DQ15
DQ0–
DQ7
BYTE#
= VIH
BYTE#
= VIL
Addresses
(Note 2)
Operation
CE# OE# WE# RESET#
WP#
X
ACC
X
Read
L
L
L
H
H
H
L
L
H
H
AIN
AIN
AIN
DOUT
DOUT
DQ8–DQ14
= High-Z,
DQ15 = A-1
Write (Program/Erase)
Accelerated Program
(Note 3)
(Note 3)
X
(Note 4) (Note 4)
(Note 4) (Note 4)
L
H
VHH
VCC
0.3 V
±
VCC ±
0.3 V
Standby
X
X
X
H
X
High-Z High-Z
High-Z
Output Disable
Reset
L
H
X
H
X
H
L
X
X
X
X
X
X
High-Z High-Z
High-Z High-Z
High-Z
High-Z
X
SA, A6 =L,
A3=L, A2=L, (Note 4)
A1=H, A0=L
Sector Group Protect
(Note 2)
L
H
L
VID
H
X
X
X
X
SA, A6=H,
A3=L, A2=L, (Note 4)
A1=H, A0=L
Sector Group Unprotect
(Note 2)
L
H
X
L
VID
VID
H
H
X
X
X
Temporary Sector Group
Unprotect
X
X
AIN
(Note 4) (Note 4)
High-Z
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 11.5–12.5 V, X = Don’t Care, SA = Sector Address,
AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A20:A0 in word mode; A20:A-1 in byte mode. Sector addresses are A20:A15 in both modes.
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Group
Protection and Unprotection” section.
3. If WP# = VIL, the first or last sector remains protected. If WP# = VIH, the first or last sector will be protected or unprotected as
determined by the method described in “Sector Group Protection and Unprotection”. All sectors are unprotected when shipped
from the factory (The Secured Silicon Sector may be factory protected depending on version ordered.)
4. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 2).
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is
used as an input for the LSB (A-1) address function.
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins operate in the byte or word configuration. If the
VersatileIO™ (VIO) Control
BYTE# pin is set at logic ‘1’, the device is in word con-
figuration, DQ0–DQ15 are active and controlled by
CE# and OE#.
The VersatileIO™ (VIO) control allows the host system
to set the voltage levels that the device generates and
tolerates on CE# and DQ I/Os to the same voltage
level that is asserted on VIO. See “Ordering Informa-
tion” on page 9 for VIO options on this device.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are
active and controlled by CE# and OE#. The data I/O
10
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
For example, a VI/O of 1.65–3.6 volts allows for I/O at
Unlock Bypass mode, only two write cycles are re-
quired to program a word or byte, instead of four. The
“Word/Byte Program Command Sequence” section
has details on programming data to the device using
both standard and Unlock Bypass command se-
quences.
the 1.8 or 3 volt levels, driving and receiving signals to
and from other 1.8 or 3 V devices on the same data
bus.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output con-
trol and gates array data to the output pins. WE#
should remain at VIH.
An erase operation can erase one sector, multiple sec-
tors, or the entire device. Table 2 indicates the address
space that each sector occupies.
Refer to the DC Characteristics table for the active
current specification for the write mode. The AC Char-
acteristics section contains timing specification tables
and timing diagrams for write operations.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No com-
mand is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. The device remains
enabled for read access until the command register
contents are altered.
Write Buffer
Write Buffer Programming allows the system to write a
maximum of 16 words/32 bytes in one programming
operation. This results in faster effective programming
time than the standard programming algorithms. See
“Write Buffer” for more information.
Accelerated Program Operation
See “Reading Array Data” for more information. Refer
to the AC Read-Only Operations table for timing speci-
fications and to Figure 13 for the timing diagram. Refer
to the DC Characteristics table for the active current
specification on reading array data.
The device offers accelerated program operations
through the ACC function. This is one of two functions
provided by the WP#/ACC pin. This function is prima-
rily intended to allow faster manufacturing throughput
at the factory.
Page Mode Read
If the system asserts VHH on this pin, the device auto-
matically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
The device is capable of fast page mode read and is
compatible with the page mode Mask ROM read oper-
ation. This mode provides faster read access speed
for random locations within a page. The page size of
the device is 4 words/8 bytes. The appropriate page is
selected by the higher address bits A(max)–A2. Ad-
dress bits A1–A0 in word mode (A1–A-1 in byte mode)
determine the specific word within a page. This is an
asynchronous operation; the microprocessor supplies
the specific word location.
V
HH from the WP#/ACC pin returns the device to nor-
mal operation. Note that the WP#/ACC pin must not be
at VHH for operations other than accelerated program-
ming, or device damage may result. In addition, no ex-
ternal pullup is necessary since the WP#/ACC pin has
internal pullup to VCC.
The random or initial page access is equal to tACC or
tCE and subsequent page read accesses (as long as
the locations specified by the microprocessor falls
within that page) is equivalent to tPACC. When CE# is
deasserted and reasserted for a subsequent access,
the access time is tACC or tCE. Fast page mode ac-
cesses are obtained by keeping the “read-page ad-
dresses” constant and changing the “intra-read page”
addresses.
Autoselect Functions
If the system writes the autoselect command se-
quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter-
nal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. Refer to the Autoselect Mode and Autose-
lect Command Sequence sections for more informa-
tion.
Writing Commands/Command Sequences
To write a command or command sequence (which in-
cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
Standby Mode
When the system is not reading or writing to the de-
vice, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
The device features an Unlock Bypass mode to facili-
tate faster programming. Once the device enters the
January 31, 2007 26517B4
Am29LV320MH/L
11
D A T A S H E E T
and the outputs are placed in the high impedance
state, independent of the OE# input.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of re-
setting the device to reading array data. When the RE-
SET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is
ready to accept another command sequence, to en-
sure data integrity.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VIO 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within
VIO 0.3 V, the device will be in the standby mode, but
the standby current will be greater. The device re-
quires standard access time (tCE) for read access
when the device is in either of these standby modes,
before it is ready to read data.
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS 0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS 0.3 V, the standby current will
be greater.
Refer to the DC Characteristics table for the standby
current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device en-
ergy consumption. The device automatically enables
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
this mode when addresses remain stable for tACC
+
30 ns. The automatic sleep mode is independent of
the CE#, WE#, and OE# control signals. Standard ad-
dress access timings provide new data when ad-
dresses are changed. While in sleep mode, output
data is latched and always available to the system.
Refer to the DC Characteristics table for the automatic
sleep mode current specification.
Refer to the AC Characteristics tables for RESET# pa-
rameters and to Figure 16 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high
impedance state.
12
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
Table 2. Sector Address Table
8-bit
16-bit
A20-A15
Sector Size
(Kbytes/Kwords)
Address Range
(in hexadecimal)
Address Range
(in hexadecimal)
Sector
SA0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
000000–00FFFF
010000–01FFFF
020000–02FFFF
030000–03FFFF
040000–04FFFF
050000–05FFFF
060000–06FFFF
070000–07FFFF
080000–08FFFF
090000–09FFFF
0A0000–0AFFFF
0B0000–0BFFFF
0C0000–0CFFFF
0D0000–0DFFFF
0E0000–0EFFFF
0F0000–0FFFFF
100000–10FFFF
110000–11FFFF
120000–12FFFF
130000–13FFFF
140000–14FFFF
150000–15FFFF
160000–16FFFF
170000–17FFFF
180000–18FFFF
190000–19FFFF
1A0000–1AFFFF
1B0000–1BFFFF
1C0000–1CFFFF
1D0000–1DFFFF
1E0000–1EFFFF
1F0000–1FFFFF
200000–20FFFF
210000–21FFFF
220000–22FFFF
230000–23FFFF
240000–24FFFF
250000–25FFFF
260000–26FFFF
270000–27FFFF
280000–28FFFF
290000–29FFFF
2A0000–2AFFFF
2B0000–2BFFFF
000000–007FFF
008000–00FFFF
010000–017FFF
018000–01FFFF
020000–027FFF
028000–02FFFF
030000–037FFF
038000–03FFFF
040000–047FFF
048000–04FFFF
050000–057FFF
058000–05FFFF
060000–067FFF
068000–06FFFF
070000–077FFF
078000–07FFFF
080000–087FFF
088000–08FFFF
090000–097FFF
098000–09FFFF
0A0000–0A7FFF
0A8000–0AFFFF
0B0000–0B7FFF
0B8000–0BFFFF
0C0000–0C7FFF
0C8000–0CFFFF
0D0000–0D7FFF
0D8000–0DFFFF
0E0000–0E7FFF
0E8000–0EFFFF
0F0000–0F7FFF
0F8000–0FFFFF
100000–107FFF
108000–10FFFF
110000–117FFF
118000–11FFFF
120000–127FFF
128000–12FFFF
130000–137FFF
138000–13FFFF
140000–147FFF
148000–14FFFF
150000–157FFF
158000–15FFFF
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
SA39
SA40
SA41
SA42
SA43
January 31, 2007 26517B4
Am29LV320MH/L
13
D A T A S H E E T
Table 2. Sector Address Table (Continued)
8-bit
16-bit
A20-A15
Sector Size
(Kbytes/Kwords)
Address Range
(in hexadecimal)
Address Range
(in hexadecimal)
Sector
SA44
SA45
SA46
SA47
SA48
SA49
SA50
SA51
SA52
SA53
SA54
SA55
SA56
SA57
SA58
SA59
SA60
SA61
SA62
SA63
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
2C0000–2CFFFF
2D0000–2DFFFF
2E0000–2EFFFF
2F0000–2FFFFF
300000–30FFFF
310000–31FFFF
320000–32FFFF
330000–33FFFF
340000–34FFFF
350000–35FFFF
360000–36FFFF
370000–37FFFF
380000–38FFFF
390000–39FFFF
3A0000–3AFFFF
3B0000–3BFFFF
3C0000–3CFFFF
3D0000–3DFFFF
3E0000–3EFFFF
3F0000–3FFFFF
160000–167FFF
168000–16FFFF
170000–177FFF
178000–17FFFF
180000–187FFF
188000–18FFFF
190000–197FFF
198000–19FFFF
1A0000–1A7FFF
1A8000–1AFFFF
1B0000–1B7FFF
1B8000–1BFFFF
1C0000–1C7FFF
1C8000–1CFFFF
1D0000–1D7FFF
1D8000–1DFFFF
1E0000–1E7FFF
1E8000–1EFFFF
1F0000–1F7FFF
1F8000–1FFFFF
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
Notes: The address range is A20:A-1 in byte mode (BYTE# = VIL) or A20:A0 in word mode (BYTE# = VIH).
14
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
In addition, when verifying sector protection, the sector
Autoselect Mode
address must appear on the appropriate highest order
address bits (see Table 2). Table 3 shows the remain-
ing address bits that are don’t care. When all neces-
sary bits have been set as required, the programming
equipment may then read the corresponding identifier
code on DQ7–DQ0.
The autoselect mode provides manufacturer and de-
vice identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equip-
ment to automatically match a device to be pro-
grammed with its corresponding programming
algorithm. However, the autoselect codes can also be
accessed in-system through the command register.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Tables 10 and 11. This
method does not require VID. Refer to the Autoselect
Command Sequence section for more information.
When using programming equipment, the autoselect
mode requires VID on address pin A9. Address pins
A6, A3, A2, A1, and A0 must be as shown in Table 3.
Table 3. Autoselect Codes, (High Voltage Method)
DQ8 to DQ15
A20 A14
A8
A9 to A6
A7
A5 A3
to to
A4 A2
Description
CE# OE# WE# to
to
A1 A0
DQ7 to DQ0
BYTE# BYTE#
A15 A10
= VIH
= VIL
VID
Manufacturer ID: AMD
Cycle 1
L
L
L
L
H
H
X
X
X
X
X
L
X
L
L
L
L
L
H
L
00
X
01h
7Eh
1Dh
00h
22
X
VID
Cycle 2
X
L
X
H
H
H
H
22
X
Cycle 3
H
22
X
Sector Protection
Verification
01h (protected),
00h (unprotected)
VID
L
L
L
L
H
H
SA
X
X
X
X
X
L
L
X
X
L
H
L
X
X
Secured Silicon Sector
Indicator Bit (DQ7),
WP# protects highest
address sector
98h (factory locked),
18h (not factory locked)
VID
L
H
H
X
X
Secured Silicon Sector
Indicator Bit (DQ7),
WP# protects lowest
address sector
88h (factory locked),
08h (not factory locked)
VID
L
L
H
X
X
X
L
X
L
H
H
X
X
Legend: L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
January 31, 2007 26517B4
Am29LV320MH/L
15
D A T A S H E E T
Table 4. Sector Group Protection/Unprotection
Address Table
Sector Group Protection and
Unprotection
Sector Group
A20–A15
000000
000001
000010
000011
0001xx
0010xx
0011xx
0100xx
0101xx
0110xx
0111xx
1000xx
1001xx
1010xx
1011xx
1100xx
1101xx
1110xx
111100
111101
111110
111111
The hardware sector group protection feature disables
both program and erase operations in any sector
group. In this device, a sector group consists of four
adjacent sectors that are protected or unprotected at
the same time (see Table 4). The hardware sector
group unprotection feature re-enables both program
and erase operations in previously protected sector
groups. Sector group protection/unprotection can be
implemented via two methods.
SA0
SA1
SA2
SA3
SA4–SA7
SA8–SA11
SA12–SA15
SA16–SA19
SA20–SA23
SA24–SA27
SA28–SA31
SA32–SA35
SA36–SA39
SA40–SA43
SA44–SA47
SA48–SA51
SA52–SA55
SA56–SA59
SA60
Sector protection/unprotection requires VID on the RE-
SET# pin only, and can be implemented either in-sys-
tem or via programming equipment. Figure 2 shows
the algorithms and Figure 24 shows the timing dia-
gram. This method uses standard microprocessor bus
cycle timing. For sector group unprotect, all unpro-
tected sector groups must first be protected prior to
the first sector group unprotect write cycle.
The device is shipped with all sector groups unpro-
tected. AMD offers the option of programming and pro-
tecting sector groups at its factory prior to shipping the
device through AMD’s ExpressFlash™ Service. Con-
tact an AMD representative for details.
It is possible to determine whether a sector group is
protected or unprotected. See the Autoselect Mode
section for details.
SA61
SA62
SA63
16
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
shows the algorithm, and Figure 23 shows the timing
diagrams, for this feature.
Write Protect (WP#)
The Write Protect function provides a hardware
method of protecting the first or last sector without
using VID. Write Protect is one of two functions pro-
vided by the WP#/ACC input.
START
If the system asserts VIL on the WP#/ACC pin, the de-
vice disables program and erase functions in the first
or last sector independently of whether those sectors
were protected or unprotected using the method de-
scribed in “Sector Group Protection and Unprotection”.
Note that if WP#/ACC is at VIL when the device is in
the standby mode, the maximum input load current is
increased. See the table in “DC Characteristics”.
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
If the system asserts VIH on the WP#/ACC pin, the de-
vice reverts to whether the first or last sector was pre-
viously set to be protected or unprotected using the
method described in “Sector Group Protection and
Unprotection”. Note: No external pullup is necessary
RESET# = VIH
Temporary Sector
Group Unprotect
since the WP#/ACC pin has internal pullup to VCC
.
Completed (Note 2)
Temporary Sector Group Unprotect
(Note: In this device, a sector group consists of four adjacent
sectors that are protected or unprotected at the same time
(see Table 4).
Notes:
1. All protected sector groups unprotected (If WP# = VIL,
the first or last sector will remain protected).
This feature allows temporary unprotection of previ-
ously protected sector groups to change data in-sys-
tem. The Sector Group Unprotect mode is activated by
setting the RESET# pin to VID. During this mode, for-
merly protected sector groups can be programmed or
erased by selecting the sector group addresses. Once
VID is removed from the RESET# pin, all the previously
protected sector groups are protected again. Figure 1
2. All previously protected sector groups are protected
once again.
Figure 1. Temporary Sector Group
Unprotect Operation
January 31, 2007 26517B4
Am29LV320MH/L
17
D A T A S H E E T
START
START
PLSCNT = 1
PLSCNT = 1
RESET# = VID
Protect all sector
groups: The indicated
portion of the sector
group protect algorithm
must be performed for all
unprotected sector
groups prior to issuing
the first sector group
unprotect address
RESET# = VID
Wait 1 μs
Wait 1 μs
Temporary Sector
Group Unprotect
Mode
Temporary Sector
Group Unprotect
Mode
No
First Write
Cycle = 60h?
No
First Write
Cycle = 60h?
Yes
Yes
Set up sector
group address
All sector
groups
No
protected?
Yes
Sector Group Protect:
Write 60h to sector
group address with
A6–A0 = 0xx0010
Set up first sector
group address
Sector Group
Unprotect:
Wait 150 µs
Write 60h to sector
group address with
A6–A0 = 1xx0010
Verify Sector Group
Protect: Write 40h
to sector group
address with
A6–A0 = 0xx0010
Reset
PLSCNT = 1
Increment
PLSCNT
Wait 15 ms
Verify Sector Group
Unprotect: Write
40h to sector group
address with
Read from
sector group address
with A6–A0
= 0xx0010
Increment
PLSCNT
A6–A0 = 1xx0010
No
No
PLSCNT
= 25?
Read from
sector group
address with
Data = 01h?
Yes
A6–A0 = 1xx0010
No
Yes
Set up
next sector group
address
Protect
another
sector group?
Yes
No
PLSCNT
= 1000?
Data = 00h?
Yes
Device failed
No
Yes
Remove VID
from RESET#
Last sector
group
verified?
No
Device failed
Write reset
command
Yes
Remove VID
from RESET#
Sector Group
Unprotect
Sector Group
Protect
Sector Group
Protect complete
Write reset
command
Algorithm
Algorithm
Sector Group
Unprotect complete
Figure 2. In-System Sector Group Protect/Unprotect Algorithms
18
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
Customer Lockable: Secured Silicon Sector NOT
Secured Silicon Sector Flash
Memory Region
Programmed or Protected At the Factory
Unless otherwise specified, the device is shipped such
that the customer may program and protect the
256-byte Secured Silicon sector.
The Secured Silicon Sector feature provides a Flash
memory region that enables permanent part identifica-
tion through an Electronic Serial Number (ESN). The
Secured Silicon Sector is 256 bytes in length, and
uses a Secured Silicon Sector Indicator Bit (DQ7) to
indicate whether or not the Secured Silicon Sector is
locked when shipped from the factory. This bit is per-
manently set at the factory and cannot be changed,
which prevents cloning of a factory locked part. This
ensures the security of the ESN once the product is
shipped to the field.
The system may program the Secured Silicon Sector
using the write-buffer, accelerated and/or unlock by-
pass methods, in addition to the standard program-
ming command sequence. See Command Definitions.
Programming and protecting the Secured Silicon Sec-
tor must be used with caution since, once protected,
there is no procedure available for unprotecting the
Secured Silicon Sector area and none of the bits in the
Secured Silicon Sector memory space can be modi-
fied in any way.
AMD offers the device with the Secured Silicon Sector
either customer lockable (standard shipping option) or
factory locked (contact an AMD sales representative
for ordering information). The customer-lockable ver-
sion is shipped with the Secured Silicon Sector unpro-
tected, allowing customers to program the sector after
receiving the device. The customer-lockable version
also has the Secured Silicon Sector Indicator Bit per-
manently set to a “0.” The factory-locked version is al-
ways protected when shipped from the factory, and
has the Secured Silicon Sector Indicator Bit perma-
nently set to a “1.” Thus, the Secured Silicon Sector In-
dicator Bit prevents customer-lockable devices from
being used to replace devices that are factory locked.
Note that the ACC function and unlock bypass modes
are not available when the Secured Silicon Sector is
enabled.
The Secured Silicon Sector area can be protected
using one of the following procedures:
■ Write the three-cycle Enter Secured Silicon Sector
Region command sequence, and then follow the
in-system sector protect algorithm as shown in Fig-
ure 2, except that RESET# may be at either VIH or
VID. This allows in-system protection of the Secured
Silicon Sector without raising any device pin to a
high voltage. Note that this method is only applica-
ble to the Secured Silicon Sector.
■ To verify the protect/unprotect status of the Secured
Silicon Sector, follow the algorithm shown in Figure
3.
Once the Secured Silicon Sector is programmed,
locked and verified, the system must write the Exit Se-
cured Silicon Sector Region command sequence to
return to reading and writing within the remainder of
the array.
The Secured Silicon sector address space in this de-
vice is allocated as follows:
Table 5. Secured Silicon Sector Contents
Secured Silicon
Sector Address
Range
Customer
Lockable
ESN Factory
Locked
ExpressFlash
Factory Locked
Factory Locked: Secured Silicon Sector
Programmed and Protected At the Factory
ESN or
determined by
customer
000000h–000007h
000008h–00007Fh
ESN
Determined by
customer
In devices with an ESN, the Secured Silicon Sector is
protected when the device is shipped from the factory.
The Secured Silicon Sector cannot be modified in any
way. An ESN Factory Locked device has an 16-byte
random ESN at addresses 000000h–000007h. Please
contact your local AMD sales representative for details
on ordering ESN Factory Locked devices.
Determined by
customer
Unavailable
The system accesses the Secured Silicon Sector
through a command sequence (see “Enter Secured
Silicon Sector/Exit Secured Silicon Sector
Command Sequence”). After the system has written
the Enter Secured Silicon Sector command sequence,
it may read the Secured Silicon Sector by using the
addresses normally occupied by the first sector (SA0).
This mode of operation continues until the system is-
sues the Exit Secured Silicon Sector command se-
quence, or until power is removed from the device. On
power-up, or following a hardware reset, the device re-
verts to sending commands to sector SA0.
Customers may opt to have their code programmed by
AMD through the AMD ExpressFlash service (Express
Flash Factory Locked). The devices are then shipped
from AMD’s factory with the Secured Silicon Sector
permanently locked. Contact an AMD representative
for details on using AMD’s ExpressFlash service.
January 31, 2007 26517B4
Am29LV320MH/L
19
D A T A S H E E T
caused by spurious system level signals during VCC
power-up and power-down transitions, or from system
noise.
START
If data = 00h,
SecSi Sector is
unprotected.
If data = 01h,
SecSi Sector is
protected.
RESET# =
VIH or VID
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not ac-
cept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control
pins to prevent unintentional writes when VCC is
Wait 1 μs
Write 60h to
any address
Remove VIH or VID
from RESET#
Write 40h to SecSi
Sector address
with A6 = 0,
Write reset
command
greater than VLKO
.
A1 = 1, A0 = 0
Write Pulse “Glitch” Protection
SecSi Sector
Protect Verify
complete
Read from SecSi
Sector address
with A6 = 0,
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
A1 = 1, A0 = 0
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Figure 3. Secured Silicon Sector Protect Verify
Hardware Data Protection
Power-Up Write Inhibit
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Tables 10 and 11
for command definitions). In addition, the following
hardware data protection measures prevent accidental
erasure or programming, which might otherwise be
If WE# = CE# = VIL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automati-
cally reset to the read mode on power-up.
COMMON FLASH MEMORY INTERFACE (CFI)
The Common Flash Interface (CFI) specification out-
lines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-inde-
pendent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 6–9. The
system must write the reset command to return the
device to reading array data.
For further information, please refer to the CFI Specifi-
cation and CFI Publication 100, available via the World
Wide Web at http://www.amd.com/flash/cfi. Alterna-
tively, contact an AMD representative for copies of
these documents.
This device enters the CFI Query mode when the sys-
tem writes the CFI Query command, 98h, to address
55h, any time the device is ready to read array data.
The system can read CFI information at the addresses
given in Tables 6–9. To terminate reading CFI data,
the system must write the reset command.
20
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
Table 6. CFI Query Identification String
Addresses
(x16)
Addresses
(x8)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Table 7. System Interface String
Addresses
(x16)
Addresses
(x8)
Data
Description
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Bh
1Ch
36h
38h
0027h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
0036h
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
0000h
0000h
0007h
0007h
000Ah
0000h
0001h
0005h
0004h
0000h
VPP Min. voltage (00h = no VPP pin present)
VPP Max. voltage (00h = no VPP pin present)
Typical timeout per single byte/word write 2N µs
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
Typical timeout per individual block erase 2N ms
Typical timeout for full chip erase 2N ms (00h = not supported)
Max. timeout for byte/word write 2N times typical
Max. timeout for buffer write 2N times typical
Max. timeout per individual block erase 2N times typical
Max. timeout for full chip erase 2N times typical (00h = not supported)
January 31, 2007 26517B4
Am29LV320MH/L
21
D A T A S H E E T
Table 8. Device Geometry Definition
Addresses Addresses
(x16)
(x8)
Data
Description
27h
4Eh
0016h
Device Size = 2N byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0005h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Ch
58h
0001h
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
003Fh
0000h
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
Erase Block Region 3 Information (refer to CFI publication 100)
Erase Block Region 4 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
22
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
Table 9. Primary Vendor-Specific Extended Query
Addresses Addresses
(x16)
(x8)
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
44h
86h
88h
0031h
0033h
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
45h
8Ah
0008h
Process Technology (Bits 7-2) 0010b = 0.23 µm MirrorBit
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
46h
47h
48h
49h
4Ah
4Bh
4Ch
8Ch
8Eh
90h
92h
94h
96h
98h
0002h
0001h
0001h
0004h
0000h
0000h
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
Sector Protect/Unprotect scheme
04 = 29LV800 mode
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank
Burst Mode Type
00 = Not Supported, 01 = Supported
Page Mode Type
00 = Not Supported, 01 = 4 Word/8 Byte Page, 02 = 8 Word/16 Byte Page
ACC (Acceleration) Supply Minimum
4Dh
4Eh
9Ah
9Ch
00B5h
00C5h
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
0004h/
0005h
00h = Uniform Device without WP# protect, 02h = Bottom Boot Device, 03h = Top
Boot Device, 04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top
WP# protect
4Fh
50h
9Eh
A0h
Program Suspend
0001h
00h = Not Supported, 01h = Supported
January 31, 2007 26517B4
Am29LV320MH/L
23
D A T A S H E E T
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Tables 10 and 11 define the valid register
command sequences. Writing incorrect address and
data values or writing them in the improper sequence
may place the device in an unknown state. A reset
command is then required to return the device to read-
ing array data.
writing the reset command returns the device to the
erase-suspend-read mode. Once programming be-
gins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If the de-
vice entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns the
device to the erase-suspend-read mode.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the AC Characteristics section for timing
diagrams.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to the
read mode (or erase-suspend-read mode if the device
was in Erase Suspend).
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
Note that if DQ1 goes high during a Write Buffer Pro-
gramming operation, the system must write the
Write-to-Buffer-Abort Reset command sequence to
reset the device for the next operation.
After the device accepts an Erase Suspend command,
the device enters the erase-suspend-read mode, after
which the system can read data from any
non-erase-suspended sector. After completing a pro-
gramming operation in the Erase Suspend mode, the
system may once again read array data with the same
exception. See the Erase Suspend/Erase Resume
Commands section for more information.
Autoselect Command Sequence
The autoselect command sequence allows the host
system to read several identifier codes at specific ad-
dresses:
A7:A0
(x16)
A6:A-1
(x8)
Identifier Code
Manufacturer ID
Device ID, Cycle 1
Device ID, Cycle 2
Device ID, Cycle 3
00h
01h
0Eh
0Fh
00h
02h
1Ch
1Eh
The system must issue the reset command to return
the device to the read (or erase-suspend-read) mode if
DQ5 goes high during an active program or erase op-
eration, or if the device is in the autoselect mode. See
the next section, Reset Command, for more informa-
tion.
Secured Silicon Sector Factory
Protect
03h
06h
Sector Protect Verify
(SA)02h
(SA)04h
Note: The device ID is read over three cycles. SA = Sector
Address
See also Requirements for Reading Array Data in the
Device Bus Operations section for more information.
The Read-Only Operations table provides the read pa-
rameters, and Figure 13 shows the timing diagram.
Tables 10 and 11 show the address requirements and
codes. This method is an alternative to that shown in
Table 3, which is intended for PROM programmers
and requires VID on address pin A9. The autoselect
command sequence may be written to an address that
is either in the read or erase-suspend-read mode. The
autoselect command may not be written while the de-
vice is actively programming or erasing.
Reset Command
Writing the reset command resets the device to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command. The
device then enters the autoselect mode. The system
may read at any address any number of times without
initiating another autoselect command sequence:
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to the read
mode. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
the read mode. If the program command sequence is
written while the device is in the Erase Suspend mode,
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the de-
vice was previously in Erase Suspend).
24
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
Unlock Bypass Command Sequence
Enter Secured Silicon Sector/Exit Secured
Silicon Sector Command Sequence
The unlock bypass feature allows the system to pro-
gram words to the device faster than using the stan-
dard program command sequence. The unlock bypass
command sequence is initiated by first writing two un-
lock cycles. This is followed by a third write cycle con-
taining the unlock bypass command, 20h. The device
then enters the unlock bypass mode. A two-cycle un-
lock bypass program command sequence is all that is
required to program in this mode. The first cycle in this
sequence contains the unlock bypass program com-
mand, A0h; the second cycle contains the program
address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial
two unlock cycles required in the standard program
command sequence, resulting in faster total program-
ming time. Tables 10 and 11 show the requirements
for the command sequence.
The Secured Silicon Sector region provides a secured
data area containing an 8-word/16-byte random Elec-
tronic Serial Number (ESN). The system can access
the Secured Silicon Sector region by issuing the
three-cycle Enter Secured Silicon Sector command
sequence. The device continues to access the Se-
cured Silicon Sector region until the system issues the
four-cycle Exit Secured Silicon Sector command se-
quence. The Exit Secured Silicon Sector command
sequence returns the device to normal operation. Ta-
bles 10 and 11 show the address and data require-
ments for both command sequences. See also
“Secured Silicon Sector Flash Memory Region” for fur-
ther information. Note that the ACC function and un-
lock bypass modes are not available when the
Secured Silicon Sector is enabled.
During the unlock bypass mode, only the Unlock By-
pass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset com-
mand sequence. The first cycle must contain the data
90h. The second cycle must contain the data 00h. The
device then returns to the read mode.
Word/Byte Program Command Sequence
Programming is a four-bus-cycle operation. The pro-
gram command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program al-
gorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verifies the
programmed cell margin. Tables 10 and 11 show the
address and data requirements for the word/byte pro-
gram command sequence, respectively. Note that the
Secured Silicon Sector, autoselect, and CFI functions
are unavailable when a program operation is in
progress.
Write Buffer Programming
Write Buffer Programming allows the system write to a
maximum of 16 words/32 bytes in one programming
operation. This results in faster effective programming
time than the standard programming algorithms. The
Write Buffer Programming command sequence is initi-
ated by first writing two unlock cycles. This is followed
by a third write cycle containing the Write Buffer Load
command written at the Sector Address in which pro-
gramming will occur. The fourth cycle writes the sector
address and the number of word locations, minus one,
to be programmed. For example, if the system will pro-
gram 6 unique address locations, then 05h should be
written to the device. This tells the device how many
write buffer addresses will be loaded with data and
therefore when to expect the Program Buffer to Flash
command. The number of locations to program cannot
exceed the size of the write buffer or the operation will
abort.
When the Embedded Program algorithm is complete,
the device then returns to the read mode and ad-
dresses are no longer latched. The system can deter-
mine the status of the program operation by using
DQ7 or DQ6. Refer to the Write Operation Status sec-
tion for information on these status bits.
Any commands written to the device during the Em-
bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should
be reinitiated once the device has returned to the read
mode, to ensure data integrity.
The fifth cycle writes the first address location and
data to be programmed. The write-buffer-page is se-
lected by address bits AMAX–A4. All subsequent ad-
dress/data pairs must fall within the
selected-write-buffer-page. The system then writes the
remaining address/data pairs into the write buffer.
Write buffer locations may be loaded in any order.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause the device to set DQ5 = 1, or cause the DQ7
and DQ6 status bits to indicate the operation was suc-
cessful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a “0”
to a “1.”
The write-buffer-page address must be the same for
all address/data pairs loaded into the write buffer.
(This means Write Buffer Programming cannot be per-
formed across multiple write-buffer pages. This also
January 31, 2007 26517B4
Am29LV320MH/L
25
D A T A S H E E T
means that Write Buffer Programming cannot be per-
■ Write to an address in a sector different than the
one specified during the Write-Buffer-Load com-
mand.
formed across multiple sectors. If the system attempts
to load programming data outside of the selected
write-buffer page, the operation will abort.
■ Write an Address/Data pair to
a
different
write-buffer-page than the one selected by the
Starting Address during the write buffer data load-
ing stage of the operation.
Note that if a Write Buffer address location is loaded
multiple times, the address/data pair counter will be
decremented for every data load operation. The host
system must therefore account for loading a
write-buffer location more than once. The counter dec-
rements for each data load operation, not for each
unique write-buffer-address location. Note also that if
an address location is loaded more than once into the
buffer, the final data loaded for that address will be
programmed.
■ Write data other than the Confirm Command after
the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 =
DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5=0. A Write-to-Buffer-Abort Reset
command sequence must be written to reset the de-
vice for the next operation. Note that the full 3-cycle
Write-to-Buffer-Abort Reset command sequence is re-
quired when using Write-Buffer-Programming features
in Unlock Bypass mode.
Once the specified number of write buffer locations
have been loaded, the system must then write the Pro-
gram Buffer to Flash command at the sector address.
Any other address and data combination aborts the
Write Buffer Programming operation. The device then
begins programming. Data polling should be used
while monitoring the last address location loaded into
the write buffer. DQ7, DQ6, DQ5, and DQ1 should be
monitored to determine the device status during Write
Buffer Programming.
Accelerated Program
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
HH on the WP#/ACC pin, the device automatically en-
V
ters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at VHH for operations
other than accelerated programming, or device dam-
age may result. In addition, no external pullup is nec-
essary since the WP#/ACC pin has internal pullup to
The write-buffer programming operation can be sus-
pended using the standard program suspend/resume
commands. Upon successful completion of the Write
Buffer Programming operation, the device is ready to
execute the next command.
The Write Buffer Programming Sequence can be
aborted in the following ways:
VCC
.
Figure 5 illustrates the algorithm for the program oper-
ation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 17 for timing diagrams.
■ Load a value that is greater than the page buffer
size during the Number of Locations to Program
step.
26
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
Write “Write to Buffer”
command and
Sector Address
Part of “Write to Buffer”
Command Sequence
Write number of addresses
to program minus 1(WC)
and Sector Address
Write first address/data
Yes
WC = 0 ?
No
Write to a different
sector address
Abort Write to
Buffer Operation?
Yes
Write to buffer ABORTED.
Must write “Write-to-buffer
Abort Reset” command
sequence to return
No
(Note 1)
Write next address/data pair
to read mode.
WC = WC - 1
Write program buffer to
flash sector address
Notes:
1. When Sector Address is specified, any address in
the selected sector is acceptable. However, when
loading Write-Buffer address locations with data, all
addresses must fall within the selected Write-Buffer
Page.
Read DQ7 - DQ0 at
Last Loaded Address
2. DQ7 may change simultaneously with DQ5.
Therefore, DQ7 should be verified.
3. If this flowchart location was reached because
DQ5= “1”, then the device FAILED. If this flowchart
location was reached because DQ1= “1”, then the
Write to Buffer operation was ABORTED. In either
case, the proper reset command must be written
before the device can begin another operation. If
DQ1=1, write the
Yes
DQ7 = Data?
No
No
Write-Buffer-Programming-Abort-Reset
command. if DQ5=1, write the Reset command.
No
DQ1 = 1?
Yes
DQ5 = 1?
Yes
4. See Table 11 for command sequences required for
write buffer programming.
Read DQ7 - DQ0 with
address = Last Loaded
Address
Yes
(Note 2)
DQ7 = Data?
No
(Note 3)
FAIL or ABORT
PASS
Figure 4. Write Buffer Programming Operation
Am29LV320MH/L
January 31, 2007 26517B4
27
D A T A S H E E T
Program Suspend/Program Resume
Command Sequence
START
The Program Suspend command allows the system to
interrupt a programming operation or a Write to Buffer
programming operation so that data can be read from
any non-suspended sector. When the Program Sus-
pend command is written during a programming pro-
cess, the device halts the program operation within 15
μs (maximum) 5μs typical and updates the status bits.
Addresses are not required when writing the Program
Suspend command.
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
After the programming operation has been sus-
pended, the system can read array data from any
non-suspended sector. The Program Suspend com-
mand may also be issued during a programming oper-
ation while an erase is suspended. In this case, data
may be read from any addresses not in Erase Sus-
pend or Program Suspend. If a read is needed from
the Secured Silicon Sector area (One-time Program
area), then user must use the proper command se-
quences to enter and exit this region.
algorithm
in progress
Verify Data?
Yes
No
No
Increment Address
Last Address?
Yes
The system may also write the autoselect command
sequence when the device is in the Program Suspend
mode. The system can read as many autoselect codes
as required. When the device exits the autoselect
mode, the device reverts to the Program Suspend
mode, and is ready for another valid operation. See
Autoselect Command Sequence for more information.
Programming
Completed
Note: See Tables 10 and 11 for program command
sequence.
After the Program Resume command is written, the
device reverts to programming. The system can deter-
mine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard pro-
gram operation. See Write Operation Status for more
information.
Figure 5. Program Operation
The system must write the Program Resume com-
mand (address bits are don’t care) to exit the Program
Suspend mode and continue the programming opera-
tion. Further writes of the Resume command are ig-
nored. Another Program Suspend command can be
written after the device has resume programming.
28
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
When the Embedded Erase algorithm is complete, the
device returns to the read mode and addresses are no
longer latched. The system can determine the status
of the erase operation by using DQ7, DQ6, or DQ2.
Refer to the Write Operation Status section for infor-
mation on these status bits.
Program Operation
or Write-to-Buffer
Sequence in Progress
Write Program Suspend
Command Sequence
Write address/data
XXXh/B0h
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset im-
mediately terminates the erase operation. If that oc-
curs, the chip erase command sequence should be
reinitiated once the device has returned to reading
array data, to ensure data integrity.
Command is also valid for
Erase-suspended-program
operations
Wait 15 μs
Autoselect and SecSi Sector
read operations are also allowed
Read data as
required
Data cannot be read from erase- or
program-suspended sectors
Figure 7 illustrates the algorithm for the erase opera-
tion. Refer to the Erase and Program Operations ta-
bles in the AC Characteristics section for parameters,
and Figure 19 section for timing diagrams.
Done
reading?
No
Sector Erase Command Sequence
Yes
Write Program Resume
Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two ad-
ditional unlock cycles are written, and are then fol-
lowed by the address of the sector to be erased, and
the sector erase command. Tables 10 and 11 show the
address and data requirements for the sector erase
command sequence. Note that the Secured Silicon
Sector, autoselect, and CFI functions are unavailable
when a erase operation is in progress.
Write address/data
XXXh/30h
Device reverts to
operation prior to
Program Suspend
Figure 6. Program Suspend/Program Resume
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm auto-
matically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or tim-
ings during these operations.
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. Tables 10 and
11 show the address and data requirements for the
chip erase command sequence. Note that the Secured
Silicon Sector, autoselect, and CFI functions are un-
available when a erase operation is in progress.
After the command sequence is written, a sector erase
time-out of 50 µs occurs. During the time-out period,
additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sec-
tors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
µs, otherwise erasure may begin. Any sector erase ad-
dress and command following the exceeded time-out
may or may not be accepted. It is recommended that
processor interrupts be disabled during this time to en-
sure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. Any command other than Sector Erase or
Erase Suspend during the time-out period resets
the device to the read mode. The system must re-
write the command sequence and any additional ad-
dresses and commands.
January 31, 2007 26517B4
Am29LV320MH/L
29
D A T A S H E E T
The system can monitor DQ3 to determine if the sec-
just as in the standard word program operation.
Refer to the Write Operation Status section for more
information.
tor erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the ris-
ing edge of the final WE# pulse in the command
sequence.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode and Autoselect Command Sequence
sections for details.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses
are no longer latched. The system can determine the
status of the erase operation by reading DQ7, DQ6, or
DQ2 in the erasing sector. Refer to the Write Opera-
tion Status section for information on these status bits.
To resume the sector erase operation, the system
must write the Erase Resume command. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the chip
has resumed erasing.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other com-
mands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
Note: During an erase operation, this flash device per-
forms multiple internal operations which are invisible
to the system. When an erase operation is suspended,
any of the internal operations that were not fully com-
pleted must be restarted. As such, if this flash device
is continually issued suspend/resume commands in
rapid succession, erase progress will be impeded as a
function of the number of suspends. The result will be
a longer cumulative erase time than without suspends.
Note that the additional suspends do not affect device
reliability or future performance. In most systems rapid
erase/suspend activity occurs only briefly. In such
cases, erase performance will not be significantly im-
pacted.
Figure 7 illustrates the algorithm for the erase opera-
tion. Refer to the Erase and Program Operations ta-
bles in the AC Characteristics section for parameters,
and Figure 19 section for timing diagrams.
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the sys-
tem to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. This command is valid only during the sec-
tor erase operation, including the 50 µs time-out pe-
riod during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program
algorithm.
START
Write Erase
Command Sequence
(Notes 1, 2)
When the Erase Suspend command is written during
the sector erase operation, the device requires a typi-
cal of 5 µs (maximum of 20 μs) to suspend the erase
operation. However, when the Erase Suspend com-
mand is written during the sector erase time-out, the
device immediately terminates the time-out period and
suspends the erase operation.
Data Poll to Erasing
Bank from System
Embedded
Erase
algorithm
in progress
After the erase operation has been suspended, the
device enters the erase-suspend-read mode. The sys-
tem can read data from or program data to any sector
not selected for erasure. (The device “erase sus-
pends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors pro-
duces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Write Operation Status section for infor-
mation on these status bits.
No
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Tables 10 and 11 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
After an erase-suspended program operation is com-
plete, the device returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
Figure 7. Erase Operation
30
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
Command Definitions
Table 10. Command Definitions (x16 Mode, BYTE# = VIH)
Bus Cycles (Notes 2–5)
Command
Sequence
(Note 1)
First
Second
Third
Fourth
Fifth
Sixth
Addr Data Addr Data
Addr
Data
Addr
Data
Addr Data Addr Data
Read (Note 5)
Reset (Note 6)
Manufacturer ID
1
1
4
6
RA
XXX
555
555
RD
F0
AA
AA
2AA
2AA
55
55
555
555
90
90
X00
X01
0001
227E
Device ID (Note 8)
X0E XX1D X0F XX00
Secured Silicon Sector Factory
Protect (Note 9)
4
4
555
555
AA
AA
2AA
2AA
55
55
555
555
90
90
X03
(Note 9)
00/01
Sector Group Protect Verify
(Note 10)
(SA)X02
Enter Secured Silicon Sector Region
Exit Secured Silicon Sector Region
Program
3
4
4
6
1
3
3
2
2
6
6
1
1
1
555
555
555
555
SA
AA
AA
AA
AA
29
2AA
2AA
2AA
2AA
55
55
55
55
555
555
555
SA
88
90
A0
25
XXX
PA
00
PD
WC
Write to Buffer (Note 11)
Program Buffer to Flash
Write to Buffer Abort Reset (Note 12)
Unlock Bypass
SA
PA
PD
WBL
PD
555
555
XXX
XXX
555
555
XXX
XXX
55
AA
AA
A0
90
2AA
2AA
PA
55
55
PD
00
55
55
555
555
F0
20
Unlock Bypass Program (Note 13)
Unlock Bypass Reset (Note 14)
Chip Erase
XXX
2AA
2AA
AA
AA
B0
30
555
555
80
80
555
555
AA
AA
2AA
2AA
55
55
555
SA
10
30
Sector Erase
Program/Erase Suspend (Note 15)
Program/Erase Resume (Note 16)
CFI Query (Note 17)
98
Legend:
X = Don’t care
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A20–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write buffer
page as PA.
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or CE#
pulse, whichever happens later.
WC = Word Count. Number of write buffer locations to load minus 1.
PD = Program Data for location PA. Data latches on rising edge of WE#
or CE# pulse, whichever happens first.
Notes:
1. See Table 1 for description of bus operations.
address sector, data is 88h for factory locked and 08h for not
factor locked.
2. All values are in hexadecimal.
10. Data is 00h for an unprotected sector group and 01h for a
protected sector group.
3. Shaded cells indicate read cycles. All others are write cycles.
4. During unlock and command cycles, when lower address bits are
555 or 2AA as shown in table, address bits above A11 and data
bits above DQ7 are don’t care.
11. Total number of cycles in command sequence is determined by
number of words written to write buffer. Maximum number of
cycles in command sequence is 21.
5. No unlock or command cycles required when device is in read
mode.
12. Command sequence resets device for next command after
aborted write-to-buffer operation.
6. Reset command is required to return to read mode (or to
erase-suspend-read mode if previously in Erase Suspend) when
device is in autoselect mode, or if DQ5 goes high while device is
providing status information.
13. Unlock Bypass command is required prior to Unlock Bypass
Program command.
14. Unlock Bypass Reset command is required to return to read
mode when device is in unlock bypass mode.
7. Fourth cycle of the autoselect command sequence is a read
cycle. Data bits DQ15–DQ8 are don’t care. Except for RD, PD,
and WC. See Autoselect Command Sequence section for more
information.
15. System may read and program in non-erasing sectors, or enter
autoselect mode, when in Erase Suspend mode. Erase Suspend
command is valid only during a sector erase operation.
8. Device ID must be read in three cycles.
16. Erase Resume command is valid only during Erase Suspend
mode.
9. If WP# protects highest address sector, data is 98h for factory
locked and 18h for not factory locked. If WP# protects lowest
17. Command is valid when device is ready to read array data or when
device is in autoselect mode.
January 31, 2007 26517B4
Am29LV320MH/L
31
D A T A S H E E T
Table 11. Command Definitions (x8 Mode, BYTE# = VIL)
Bus Cycles (Notes 2–5)
Command
Sequence
(Note 1)
First
Second
Third
Fourth
Fifth
Sixth
Addr Data Addr Data
Addr
Data
Addr
Data
Addr Data Addr Data
Read (Note 6)
Reset (Note 7)
Manufacturer ID
1
1
4
6
RA
RD
F0
XXX
AAA
AAA
AA
AA
555
555
55
55
AAA
AAA
90
90
X00
X02
01
Device ID (Note 9)
7E
X1C
1D
X1E
00
Secured Silicon Sector Factory
Protect (Note 10)
4
4
AAA
AAA
AA
AA
555
555
55
55
AAA
AAA
90
90
X06
(Note 10)
00/01
Sector Group Protect Verify
(Note 11)
(SA)X04
Enter Secured Silicon Sector Region
Exit Secured Silicon Sector Region
Program
3
4
4
6
1
3
3
2
2
6
6
1
1
1
AAA
AAA
555
AA
AA
AA
AA
29
555
555
2AA
555
55
55
55
55
AAA
AAA
555
SA
88
90
A0
25
XXX
PA
00
PD
BC
Write to Buffer (Note 12)
Program Buffer to Flash
Write to Buffer Abort Reset (Note 13)
Unlock Bypass
AAA
SA
SA
PA
PD
WBL
PD
AAA
AAA
XXX
XXX
AAA
AAA
XXX
XXX
AA
AA
AA
A0
90
555
555
PA
55
55
PD
00
55
55
AAA
AAA
F0
20
Unlock Bypass Program (Note 13)
Unlock Bypass Reset (Note 15)
Chip Erase
XXX
555
555
AA
AA
B0
30
AAA
AAA
80
80
AAA
AAA
AA
AA
555
555
55
55
AAA
SA
10
30
Sector Erase
Program/Erase Suspend (Note 16)
Program/Erase Resume (Note 17)
CFI Query (Note 18)
98
Legend:
X = Don’t care
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A20–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write buffer
page as PA.
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or CE#
pulse, whichever happens later.
BC = Byte Count. Number of write buffer locations to load minus 1.
PD = Program Data for location PA. Data latches on rising edge of WE#
or CE# pulse, whichever happens first.
Notes:
1. See Table 1 for description of bus operations.
address sector, data is 88h for factory locked and 08h for not
factor locked.
2. All values are in hexadecimal.
11. Data is 00h for an unprotected sector group and 01h for a
protected sector group.
3. Shaded cells indicate read cycles. All others are write cycles.
4. During unlock and command cycles, when lower address bits are
555 or AAA as shown in table, address bits above A11 are don’t
care.
12. Total number of cycles in command sequence is determined by
number of words written to write buffer. Maximum number of
cycles in command sequence is 21.
5. Unless otherwise noted, address bits A20–A11 are don’t cares.
13. Command sequence resets device for next command after
aborted write-to-buffer operation.
6. No unlock or command cycles required when device is in read
mode.
14. Unlock Bypass command is required prior to Unlock Bypass
Program command.
7. Reset command is required to return to read mode (or to
erase-suspend-read mode if previously in Erase Suspend) when
device is in autoselect mode, or if DQ5 goes high while device is
providing status information.
15. Unlock Bypass Reset command is required to return to read
mode when device is in unlock bypass mode.
16. System may read and program in non-erasing sectors, or enter
autoselect mode, when in Erase Suspend mode. Erase Suspend
command is valid only during a sector erase operation.
8. Fourth cycle of autoselect command sequence is a read cycle.
Data bits DQ15–DQ8 are don’t care. See Autoselect Command
Sequence section or more information.
17. Erase Resume command is valid only during Erase Suspend
mode.
9. Device ID must be read in three cycles.
10. If WP# protects highest address sector, data is 98h for factory
locked and 18h for not factory locked. If WP# protects lowest
18. Command is valid when device is ready to read array data or when
device is in autoselect mode.
32
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
WRITE OPERATION STATUS
The device provides several bits to determine the status of a
program or erase operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 12 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a method for
determining whether a program or erase operation is com-
plete or in progress. The device also provides a hard-
ware-based output signal, RY/BY#, to determine
whether an Embedded Program or Erase operation is
in progress or has been completed.
valid data, the data outputs on DQ0–DQ6 may be still
invalid. Valid data on DQ0–DQ7 will appear on suc-
cessive read cycles.
Table 12 shows the outputs for Data# Polling on DQ7.
Figure 8 shows the Data# Polling algorithm. Figure 20
in the AC Characteristics section shows the Data#
Polling timing diagram.
DQ7: Data# Polling
START
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Program or Erase algorithm is in
progress or completed, or whether the device is in Erase
Suspend. Data# Polling is valid after the rising edge of the
final WE# pulse in the command sequence.
Read DQ7–DQ0
Addr = VA
During the Embedded Program algorithm, the device out-
puts on DQ7 the complement of the datum programmed to
DQ7. This DQ7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to
DQ7. The system must provide the program address to
read valid status information on DQ7. If a program address
falls within a protected sector, Data# Polling on DQ7 is ac-
tive for approximately 1 µs, then the device returns to the
read mode.
Yes
DQ7 = Data?
No
No
DQ5 = 1?
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status infor-
mation on DQ7.
Yes
Read DQ7–DQ0
Addr = VA
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Poll-
ing on DQ7 is active for approximately 100 µs, then the
device returns to the read mode. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the se-
lected sectors that are protected. However, if the sys-
tem reads DQ7 at an address within a protected
sector, the status may not be valid.
Yes
DQ7 = Data?
No
PASS
FAIL
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
Just prior to the completion of an Embedded Program
or Erase operation, DQ7 may change asynchronously
with DQ0–DQ6 while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has com-
pleted the program or erase operation and DQ7 has
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Figure 8. Data# Polling Algorithm
January 31, 2007 26517B4
Am29LV320MH/L
33
D A T A S H E E T
After an erase command sequence is written, if all sectors
RY/BY#: Ready/Busy#
selected for erasing are protected, DQ6 toggles for approxi-
mately 100 µs, then returns to reading array data. If not all
selected sectors are protected, the Embedded Erase algo-
rithm erases the unprotected sectors, and ignores the se-
lected sectors that are protected.
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, sev-
eral RY/BY# pins can be tied together in parallel with a
The system can use DQ6 and DQ2 together to determine
whether a sector is actively erasing or is erase-suspended.
When the device is actively erasing (that is, the Embedded
Erase algorithm is in progress), DQ6 toggles. When the de-
vice enters the Erase Suspend mode, DQ6 stops toggling.
However, the system must also use DQ2 to determine
which sectors are erasing or erase-suspended. Alterna-
tively, the system can use DQ7 (see the subsection on
DQ7: Data# Polling).
pull-up resistor to VCC
.
If the output is low (Busy), the device is actively eras-
ing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the standby
mode, or in the erase-suspend-read mode. Table 12
shows the outputs for RY/BY#.
DQ6: Toggle Bit I
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 μs after the program
command sequence is written, then returns to reading
array data.
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or com-
plete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any ad-
dress, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Pro-
gram algorithm is complete.
Table 12 shows the outputs for Toggle Bit I on DQ6.
Figure 9 shows the toggle bit algorithm. Figure 21 in
the “AC Characteristics” section shows the toggle bit
timing diagrams. Figure 22 shows the differences be-
tween DQ2 and DQ6 in graphical form. See also the
subsection on DQ2: Toggle Bit II.
During an Embedded Program or Erase algorithm op-
eration, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE# to control the read cycles. When the operation is
complete, DQ6 stops toggling.
34
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indi-
cates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
START
Read DQ7–DQ0
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for era-
sure. (The system may use either OE# or CE# to con-
trol the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-sus-
pended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for era-
sure. Thus, both status bits are required for sector and
mode information. Refer to Table 12 to compare out-
puts for DQ2 and DQ6.
Read DQ7–DQ0
No
Toggle Bit
= Toggle?
Yes
Figure 9 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the RY/BY#: Ready/Busy# sub-
section. Figure 21 shows the toggle bit timing diagram.
Figure 22 shows the differences between DQ2 and
DQ6 in graphical form.
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Twice
Reading Toggle Bits DQ6/DQ2
Refer to Figure 9 for the following discussion. When-
ever the system initially begins reading toggle bit sta-
tus, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically,
the system would note and store the value of the tog-
gle bit after the first read. After the second read, the
system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the fol-
lowing read cycle.
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the sys-
tem also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is tog-
gling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the de-
vice did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
Note: The system should recheck the toggle bit even if
DQ5 = “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
Figure 9. Toggle Bit Algorithm
The remaining scenario is that the system initially de-
termines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read cy-
cles, determining the status as described in the previ-
ous paragraph. Alternatively, it may choose to perform
January 31, 2007 26517B4
Am29LV320MH/L
35
D A T A S H E E T
other system tasks. In this case, the system must start
mand. When the time-out period is complete, DQ3
switches from a “0” to a “1.” If the time between addi-
tional sector erase commands from the system can be
assumed to be less than 50 µs, the system need not
monitor DQ3. See also the Sector Erase Command
Sequence section.
at the beginning of the algorithm when it returns to de-
termine the status of the operation (top of Figure 9).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program, erase, or
write-to-buffer time has exceeded a specified internal
pulse count limit. Under these conditions DQ5 produces a
“1,” indicating that the program or erase cycle was not suc-
cessfully completed.
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all fur-
ther commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the
device will accept additional sector erase commands.
To ensure the command has been accepted, the sys-
tem software should check the status of DQ3 prior to
and following each subsequent sector erase com-
mand. If DQ3 is high on the second status check, the
last command might not have been accepted.
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously pro-
grammed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the timing limit
has been exceeded, DQ5 produces a “1.”
In all these cases, the system must write the reset
command to return the device to the reading the array
(or to erase-suspend-read if the device was previously
in the erase-suspend-program mode).
Table 12 shows the status of DQ3 relative to the other
status bits.
DQ3: Sector Erase Timer
DQ1: Write-to-Buffer Abort
DQ1 indicates whether a Write-to-Buffer operation
was aborted. Under these conditions DQ1 produces a
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out
also applies after each additional sector erase com-
“1”.
The
system
must
issue
the
Write-to-Buffer-Abort-Reset command sequence to re-
turn the device to reading array data. See Write Buffer
Table 12. Write Operation Status
DQ7
DQ5
DQ2
Status
(Note 2)
DQ6
(Note 1)
DQ3
N/A
1
(Note 2)
DQ1 RY/BY#
Embedded Program Algorithm
Embedded Erase Algorithm
Program-Suspended
DQ7#
0
Toggle
Toggle
0
0
No toggle
Toggle
0
0
0
Standard
Mode
N/A
Invalid (not allowed)
Data
1
1
1
1
0
Program
Suspend
Mode
Program-
Sector
Suspend
Non-Program
Read
Suspended Sector
Erase-Suspended
1
No toggle
Toggle
0
N/A
Toggle
N/A
N/A
N/A
Erase-
Sector
Suspend
Erase
Suspend
Mode
Non-EraseSuspended
Read
Data
Sector
Erase-Suspend-Program
(Embedded Program)
DQ7#
0
N/A
Busy (Note 3)
Abort (Note 4)
DQ7#
DQ7#
Toggle
Toggle
0
0
N/A
N/A
N/A
N/A
0
1
0
0
Write-to-
Buffer
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the
maximum timing limits. Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to ‘1’ when the device has aborted the write-to-buffer operation.
36
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
20 ns
20 ns
+0.8 V
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –65°C to +125°C
–0.5 V
–2.0 V
Voltage with Respect to Ground
V
CC (Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
VIO. . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
20 ns
A9, OE#, ACC, and RESET#
(Note 2). . . . . . . . . . . . . . . . . . . .–0.5 V to +12.5 V
Figure 10. Maximum Negative
Overshoot Waveform
All other pins (Note 1). . . . . . –0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
overshoot VSS to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
See Figure 10. During voltage transitions, input or I/O
pins may overshoot to VCC +2.0 V for periods up to 20 ns.
See Figure 11.
20 ns
VCC
+2.0 V
VCC
+0.5 V
2. Minimum DC input voltage on pins A9, OE#, ACC, and
RESET# is –0.5 V. During voltage transitions, A9, OE#,
ACC, and RESET# may overshoot VSS to –2.0 V for
periods of up to 20 ns. See Figure 10. Maximum DC
input voltage on pin A9, OE#, ACC, and RESET# is
+12.5 V which may overshoot to +14.0 V for periods up
to 20 ns.
2.0 V
20 ns
20 ns
Figure 11. Maximum Positive
Overshoot Waveform
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
Supply Voltages
V
V
CC full voltage range. . . . . . . . . . . . . . . . . . 2.7–3.6 V
CC regulated voltage range . . . . . . . . . . . . 3.0–3.6 V
VIO (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . 1.65–3.6V
Notes:
1. Operating ranges define those limits between which the
functionality of the device is guaranteed.
2. See Ordering Information section for valid VCC/VIO range
combinations. The I/Os will not operate at 3 V when VIO
1.8 V.
=
January 31, 2007 26517B4
Am29LV320MH/L
37
D A T A S H E E T
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
(Notes)
Test Conditions
VIN = VSS to VCC
Min
Typ
Max
Unit
,
ILI
Input Load Current (1)
±1.0
µA
VCC = VCC max
ILIT
ILR
A9, ACC Input Load Current
Reset Leakage Current
VCC = VCC max; A9 = 12.5 V
VCC = VCC max; RESET# = 12.5 V
35
35
µA
µA
VOUT = VSS to VCC
VCC = VCC max
,
ILO
Output Leakage Current
±1.0
µA
5 MHz
1 MHz
3
13
4
34
43
50
80
20
40
60
VCC Active Read Current
(2, 3)
ICC1
CE# = VIL, OE# = VIH,
mA
1 MHz
ICC2
VCC Initial Page Read Current (2, 3)
VCC Intra-Page Read Current (2, 3)
CE# = VIL, OE# = VIH
10 MHz
10 MHz
33 MHz
40
3
mA
ICC3
CE# = VIL, OE# = VIH
CE# = VIL, OE# = VIH
6
mA
mA
ICC4
ICC5
ICC6
ICC7
VCC Active Write Current (3, 4)
VCC Standby Current (3)
VCC Reset Current (3)
50
CE#, RESET# = VCC ± 0.3 V,
1
1
1
5
5
5
µA
µA
µA
WP# = VIH
RESET# = VSS ± 0.3 V, WP# = VIH
VIH = VCC ± 0.3 V;
Automatic Sleep Mode (3, 5)
VIL = VSS ± 0.3 V, WP# = VIH
VIL1
VIH1
VIL2
VIH2
Input Low Voltage 1(5, 6)
Input High Voltage 1 (5, 6)
Input Low Voltage 2 (5, 7)
Input High Voltage 2 (5, 7)
–0.5
1.9
0.8
V
V
V
V
VCC + 0.5
0.3 x VIO
VIO + 0.5
–0.5
1.9
Voltage for ACC Program
Acceleration
VHH
VID
VCC = 2.7 –3.6 V
11.5
11.5
12.5
V
V
Voltage for Autoselect and Temporary
Sector Unprotect
VCC = 2.7 –3.6 V
12.5
VOL
VOH1
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min = VIO
IOH = –2.0 mA, VCC = VCC min = VIO 0.85 VIO
0.15 x VIO
V
V
V
V
V
Output High Voltage
VOH2
IOH = –100 µA, VCC = VCC min = VIO
VIO–0.4
2.3
VLKO
Low VCC Lock-Out Voltage (8)
Input Low Voltage 1(5, 6)
2.5
0.8
VIL1
–0.5
Notes:
1. On the WP#/ACC pin only, the maximum input load current when WP# = VIL is 5.0 µA.
2. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
3. Maximum ICC specifications are tested with VCC = VCCmax.
4. ICC active while Embedded Erase or Embedded Program is in progress.
5. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. TIf VIO < VCC, maximum VIL
for CE# and DQ I/Os is 0.3 VIO. If VIO < VCC, minimum VIH for CE# and DQ I/Os is 0.7 VIO. Maximum VIH for these connections is
VIO + 0.3 V
6. VCC voltage requirements.
7. VIO voltage requirements.
8. Not 100% tested.
9. Includes RY/BY#
38
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
TEST CONDITIONS
Table 13. Test Specifications
Test Condition All Speeds
1 TTL gate
3.3 V
Unit
Output Load
2.7 kΩ
Device
Under
Test
Output Load Capacitance, CL
30
pF
(including jig capacitance)
Input Rise and Fall Times
Input Pulse Levels
5
ns
V
C
L
6.2 kΩ
0.0–3.0
Input timing measurement
reference levels (See Note)
1.5
V
V
Output timing measurement
reference levels
0.5 VIO
Note: Diodes are IN3064 or equivalent
Figure 12. Test Setup
Note: If VIO < VCC, the reference level is 0.5 VIO.
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Changing, State Unknown
Don’t Care, Any Change Permitted
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
1.5 V
0.5 VIO V
Input
Measurement Level
Output
0.0 V
Note: If VIO < VCC, the input measurement reference level is 0.5 VIO.
Figure 13. Input Waveforms and
Measurement Levels
January 31, 2007 26517B4
Am29LV320MH/L
39
D A T A S H E E T
AC CHARACTERISTICS
Read-Only Operations
Parameter
Speed Options
101,
90R 101R 112R 112 120R 120 Unit
JEDEC Std. Description
Test Setup
tAVAV
tRC Read Cycle Time (Note 1)
Min
90
90
100
100
110
110
110
120
120
120
ns
ns
CE#, OE#
= VIL
tAVQV tACC Address to Output Delay
Max
tELQV tCE Chip Enable to Output Delay
tPACC Page Access Time
OE# = VIL Max
90
25
25
100
30
ns
ns
ns
Max
Max
30
30
40
40
30
30
40
40
tGLQV tOE Output Enable to Output Delay
30
Chip Enable to Output High Z
tEHQZ tDF
(Note 1)
Max
Max
16
16
ns
ns
Output Enable to Output High Z
tGHQZ tDF
(Note 1)
Output Hold Time From Addresses,
tAXQX tOH
Min
Min
Min
0
0
ns
ns
ns
CE# or OE#, Whichever Occurs First
Read
Output Enable
tOEH Hold Time
Toggle and
Data# Polling
10
(Note 1)
Notes:
1. Not 100% tested.
2. See Figure 12 and Table 13 for test specifications.
3. AC specifications listed are tested with VIO = VCC. Contact AMD for information on AC operation VIO ≠ VCC.
tRC
Addresses Stable
tACC
Addresses
CE#
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0 V
Figure 14. Read Operation Timing
40
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
AC CHARACTERISTICS
Same Page
A21
-
-
A2
A0
A1
Ad
Aa
Ab
Ac
tPACC
tPACC
tPACC
tACC
Data Bus
Qa
Qb
Qc
Qd
CE#
OE#
* Figure shows device in word mode. Addresses are A1–A-1 for byte mode.
Figure 15. Page Read Timings
January 31, 2007 26517B4
Am29LV320MH/L
41
D A T A S H E E T
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std.
Description
All Speed Options
Unit
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
tReady
Max
Max
20
μs
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
tReady
500
ns
tRP
tRH
RESET# Pulse Width
Min
Min
Min
500
50
ns
ns
μs
Reset High Time Before Read (See Note)
RESET# Low to Standby Mode
tRPD
20
Note:
1. Not 100% tested
2. AC specifications listed are tested with VIO = VCC. Contact AMD for information on AC operation with VIO ≠ VCC.
.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 16. Reset Timings
42
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Parameter
Speed Options
101, 112,
120,
90R 101R 112R 120R Unit
JEDEC
tAVAV
Std. Description
tWC Write Cycle Time (Note 1)
tAS Address Setup Time
tASO Address Setup Time to OE# low during toggle bit polling
Min
Min
Min
Min
90
100
110
120
ns
ns
ns
ns
tAVWL
0
15
45
tWLAX
tAH
Address Hold Time
Address Hold Time From CE# or OE# high
during toggle bit polling
tAHT
Min
0
ns
tDVWH
tWHDX
tDS
tDH
Data Setup Time
Data Hold Time
Min
Min
Min
45
0
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
tOEPH Output Enable High during toggle bit polling
20
0
tGHWL
tELWL
tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min
tCS
tCH
tWP
CE# Setup Time
CE# Hold Time
Write Pulse Width
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
0
tWHEH
tWLWH
tWHDL
0
35
30
240
7.5
15
tWPH Write Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Per Byte
Per Word
Per Byte
Per Word
Byte
Effective Write Buffer Program Operation
(Notes 2, 4)
6.25
12.5
60
Accelerated Effective Write Buffer Program
Operation (Notes 2, 5)
tWHWH1 tWHWH1
Single Word/Byte Program Operation
(Notes 2, 5)
Typ
Typ
µs
µs
Word
60
Byte
54
Accelerated Single Word/Byte
Programming Operation (Note 2)
Word
54
tWHWH2 tWHWH2 Sector Erase Operation (Note 2)
tVHH VHH Rise and Fall Time (Note 1)
tVCS VCC Setup Time (Note 1)
Typ
Min
Min
Max
Max
0.5
250
50
sec
ns
µs
ns
µs
tBUSY WE# to RY/BY#
90
100
110
120
tPOLL Program Valid Before Status Polling (Note 7)
4
Notes:
1. Not 100% tested.
6. AC specifications listed are tested with VIO = VCC. Contact AMD
for information on AC operation with VIO ≠ VCC.
2. See the “Erase And Programming Performance” section for more
information.
7. When using the program suspend/resume feature, if the suspend
command is issued within tPOLL, tPOLL must be fully re-applied
upon resuming the programming operation. If the suspend
command is issued after tPOLL, tPOLL is not required again prior to
reading the status bits upon resuming.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a
16-word/32-byte write buffer operation.
5. Word/Byte programming specification is based upon a single
word/byte programming operation not utilizing the write buffer.
January 31, 2007 26517B4
Am29LV320MH/L
43
D A T A S H E E T
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
Read Status Data (last two cycles)
tAS
PA
tWC
Addresses
555h
PA
PA
tAH
CE#
OE#
tCH
tPOLL
tWP
WE#
Data
tWPH
tWHWH1
tCS
tDS
tDH
PD
DOUT
A0h
Status
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17. Program Operation Timings
VHH
VIL or VIH
VIL or VIH
ACC
tVHH
tVHH
Figure 18. Accelerated Program Timing Diagram
44
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
Read Status Data
VA
tAS
SA
tWC
VA
Addresses
CE#
2AAh
555h for chip erase
tAH
tCH
OE#
tWP
WE#
tWPH
tWHWH2
tCS
tDS
tDH
In
Data
Complete
55h
30h
Progress
10 for Chip Erase
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”.
2. Illustration shows device in word mode.
Figure 19. Chip/Sector Erase Operation Timings
January 31, 2007 26517B4
Am29LV320MH/L
45
D A T A S H E E T
AC CHARACTERISTICS
tRC
VA
Addresses
VA
VA
tPOLL
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
WE#
tDF
tOH
High Z
High Z
DQ15 and DQ7
Valid Data
Valid Data
Complement
Complement
True
DQ14–DQ8, DQ6–DQ0
Status Data
True
Status Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 20. Data# Polling Timings (During Embedded Algorithms)
46
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE#
tOEH
WE#
tCEPH
tOEPH
OE#
tDH
Valid Data
tOE
Valid
Status
Valid
Status
Valid
Status
DQ6/DQ2
RY/BY#
Valid Data
(first read)
(second read)
(stops toggling)
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle
Figure 21. Toggle Bit Timings (During Embedded Algorithms)
Enter
Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Resume
Erase
Erase Suspend
Read
Erase
Suspend
Program
Erase
Complete
WE#
Erase
Erase Suspend
Read
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 22. DQ2 vs. DQ6
January 31, 2007 26517B4
Am29LV320MH/L
47
D A T A S H E E T
AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
Min
500
ns
RESET# Setup Time for Temporary Sector
Unprotect
tRSP
4
µs
Note:
1. Not 100% tested.
2. AC specifications listed are tested with VIO = VCC. Contact AMD for information on AC operation with VIO ≠ VCC.
VID
VID
RESET#
VSS, VIL,
or VIH
VSS, VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRRB
tRSP
RY/BY#
Figure 23. Temporary Sector Group Unprotect Timing Diagram
48
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
AC CHARACTERISTICS
V
ID
IH
V
RESET#
SA, A6,
A3, A2,
A1, A0
Valid*
Sector Group Protect or Unprotect
60h 60h
Valid*
Valid*
Status
Verify
40h
Data
Sector Group Protect: 150 µs,
Sector Group Unprotect: 15 ms
1 µs
CE#
WE#
OE#
* For sector group protect, A6:A0 = 0xx0010. For sector group unprotect, A6:A0 = 1xx0010.
Figure 24. Sector Group Protect and Unprotect Timing Diagram
January 31, 2007 26517B4
Am29LV320MH/L
49
D A T A S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Parameter
Speed Options
101, 112, 120,
JEDEC
tAVAV
Std.
tWC
tAS
Description
90R 101R 112R 120R Unit
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Min
Min
Min
Min
Min
90
100
110
120
ns
ns
ns
ns
ns
tAVWL
tELAX
tDVEH
tEHDX
0
45
45
0
tAH
tDS
tDH
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHEL
tGHEL
Min
0
ns
tWLEL
tEHWH
tELEH
tEHEL
tWS
tWH
tCP
WE# Setup Time
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
0
0
ns
ns
ns
ns
µs
µs
µs
µs
µs
WE# Hold Time
CE# Pulse Width
45
30
240
7.5
15
tCPH
CE# Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Per Byte
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Word
Per Byte
Per Word
Byte
6.25
12.5
60
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
tWHWH1
tWHWH1
Single Word/Byte Program
Operation (Note 2, 5)
Typ
Typ
µs
µs
Word
60
Byte
54
Accelerated Single Word/Byte
Programming Operation (Note 2)
Word
54
tWHWH2
tWHWH2 Sector Erase Operation (Note 2, 5)
Typ
Min
Max
0.5
50
sec
ns
tRH
RESET High Time Before Write (Note 1)
Program Valid before Status Polling (Note 7)
tPOLL
4
µs
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
6. AC specifications listed are tested with VIO = VCC. Contact AMD for information on AC operation with VIO ≠ VCC.
7. When using the program suspend/resume feature, if the suspend command is issued within tPOLL, tPOLL must be fully re-applied
upon resuming the programming operation. If the suspend command is issued after tPOLL, tPOLL is not required again prior to
reading the status bits upon resuming.
50
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
AC CHARACTERISTICS
555 for program
PA for program
2AA for erase
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
OE#
tPOLL
tGHEL
tWHWH1 or 2
tCP
CE#
Data
tWS
tCPH
tDS
tBUSY
tDH
DQ7#,
DQ15#
DOUT
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Illustration shows device in word mode.
Figure 25. Alternate CE# Controlled Write (Erase/Program)
Operation Timings
January 31, 2007 26517B4
Am29LV320MH/L
51
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
sec
sec
µs
Comments
Sector Erase Time
0.5
32
3.5
64
Excludes 00h programming
prior to erasure (Note 6)
Chip Erase Time
Single Word/Byte Program Time (Note 3)
Accelerated Single Word/Byte Program Time (Note 3)
Total Write Buffer Program Time (Note 4)
60
600
540
1200
38
54
µs
240
7.5
15
µs
Per Byte
Per Word
Total Accelerated Write Buffer Program Time (Note 4)
µs
Effective Write Buffer Program Time (Note 5)
Excludes system level
overhead (Note 7)
75
µs
200
6.25
12.5
31.5
1040
33
µs
Per Byte
Per Word
µs
Effective Accelerated Write Buffer Program Time
(Note 5)
65
µs
Chip Program Time
73
sec
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, Programming specification assume that
all bits are programmed to 00h.
2. Maximum values are measured at VCC = 3.0, worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence (s) for the program command. See Tables 12 and
13 for further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
VCC Current
–1.0 V
VCC + 1.0 V
+100 mA
–100 mA
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
52
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
TSOP PIN AND BGA PACKAGE CAPACITANCE
Parameter Symbol
Parameter Description
Test Setup
Typ
6
Max
7.5
5
Unit
pF
pF
pF
pF
pF
pF
TSOP
BGA
CIN
Input Capacitance
Output Capacitance
Control Pin Capacitance
VIN = 0
VOUT = 0
VIN = 0
4.2
8.5
5.4
7.5
3.9
TSOP
BGA
12
6.5
9
COUT
TSOP
BGA
CIN2
4.7
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter Description
Test Conditions
150°C
Min
Unit
Years
Years
10
20
Minimum Pattern Data Retention Time
125°C
January 31, 2007 26517B4
Am29LV320MH/L
53
D A T A S H E E T
PHYSICAL DIMENSIONS
TS056/TSR056—56-Pin Standard and Reverse Pinout Thin Small Outline Package (TSOP)
NOTES:
PACKAGE
TS/TSR 56
JEDEC
MO-142 (B) EC
1
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982.)
SYMBOL
MIN.
---
NOM.
---
MAX.
1.20
0.15
1.05
0.23
0.27
0.16
0.21
2
3
4
PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP).
A
A1
A2
b1
b
PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN), INK OR LASER MARK.
0.05
0.95
0.17
0.17
0.10
0.10
---
1.00
0.20
0.22
---
TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS
DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE
LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE.
5
6
DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE
MOLD PROTUSION IS 0.15 mm PER SIDE.
c1
c
---
DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE
DAMBAR PROTUSION SHALL BE 0.08 mm TOTAL IN EXCESS OF b
DIMENSION AT MAX MATERIAL CONDITION. MINIMUM SPACE BETWEEN
PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 mm.
D
19.90
18.30
20.00
18.40
20.20
18.50
D1
E
e
13.90
14.00
14.10
7
THESE DIMESIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN
0.10 mm AND 0.25 mm FROM THE LEAD TIP.
0.50 BASIC
L
0.50
0˚
0.60
3˚
0.70
5˚
8. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
SEATING PLANE.
O
R
N
0.08
---
0.20
9
DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
56
3160\38.10A
54
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
PHYSICAL DIMENSIONS
LAA064—64-Ball Fortified Ball Grid Array (FBGA) 13 x 11 mm Package
January 31, 2007 26517B4
Am29LV320MH/L
55
D A T A S H E E T
REVISION SUMMARY
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase
Command Sequence
Revision A (May 30, 2002)
Initial release as Advance Information data sheet.
Noted that the Secured Silicon Sector, autoselect, and
CFI functions are unavailable when a program or
erase operation is in progress.
Revision A+1 (September 3, 2002)
Mirrorbit 32 Mbit Device Family
Changed the 48-pin TSOP to 40-pin TSOP.
Common Flash Memory Interface (CFI)
Alternate CE# Controlled Erase and Program
Operations
Changed CFI website address.
DC Characteristics
Added tRH parameter to table.
Added ILR parameter symbol to table. Removed VIL,
VIH, VOL, and VOH and replaced with VIL, VIH, VOL, VOH1
and VOH2. Clarified note #5. Removed note #6.
Erase and Program Operations
Added tBUSY parameter to table.
Figure 16. Program Operation Timings
Read-Only Operations
Added RY/BY# to waveform.
Added note #3.
TSOP and BGA PIN Capacitance
Absolute Maximum Rating
Added the FBGA package.
Changed the Ambient Temperature with Power Ap-
plied from –55°C to +125°C to –65°C to +125°C.
Program Suspend/Program Resume Command
Sequence
Revision A+3 (February 14, 2003)
Changed 15 μs typical to maximum and added 5 μs
typical.
Distinctive Characteristics
Corrected performance characteristics.
Erase Suspend/Erase Resume Commands
AC Characteristics
Changed typical from 20 μs to 5 μs and added a maxi-
mum of 20 μs.
Added Note.
Product Selector Guide
Input values in the tWHWH1 and tWHWH2 parameters in
the Erase and Program Options table that were previ-
ously TBD. Also added notes 5 and 6.
Added Note 2.
Ordering Information
Input values in the tWHWH1 and tWHWH2 parameters in
the Alternate CE# Controlled Erase and Program Op-
tions table that were previously TBD. Also added notes
5 and 6.
Added 101R, 112R, and 120R to Valid Combinations
Table. Added Note 1.
Read-Only Operations, Erase and Program
Operations, Alternate CE# Controlled Erase and
Program Operations,
Erase and Programming Performance
Input values into table that were previously TBD.
Added note 3 and 4.
Added 101R, 112R, and 120R to speed options.
Revision A+2 (November 15, 2002)
Revision B (May 7, 2003)
Customer Lockable: Secured Silicon Sector NOT
Programmed or Protected At the Factory
Distinctive Characteristics
Added typical active read current.
Added second bullet and figure.
Global
Product Selector Guide and Read-Only Operations
Converted to full datasheet version. Modified Secured
Silicon Sector Flash Memory Region section to in-
clude ESN references.
Added 30 ns to the 112R and 120R to Max page ac-
cess time and Max OE# Access time.
Changed the Chip Enable to Output High Z and Out-
put Enable to Output High Z to 16 ns.
DC Characteristics
Corrected typical and maximum values for the ICC1
CC2, and ICC3
,
I
.
Erase and Program Operations and Alternate CE#
Controlled Erase and Program Operations
Changed Accelerated Effective Write Buffer Program
Operation value.
56
Am29LV320MH/L
26517B4 January 31, 2007
D A T A S H E E T
Trademarks
Erase and Programming Performance
Input values into table that were previously TBD. Modi-
fied notes. Removed Word references.
Updated.
Cover Sheet and Title Page
Added notation referencing superseding documenta-
tion.
Revision B +1 (February 12, 2004)
Customer Lockable: Secured Silicon Sector NOT
Programmed or Protected at the Factory
Revision B+2 (October 27, 2004)
Removed second paragraph.
Ordering Information
Table 10 & Table 11: Command Definitions
Added Lead-free package options.
Replaced the Addr information for both Program/Erase
Suspend and Program/Erase Resume from BA to
XXX.
Revision B+3 (December 14, 2005)
Global
Erase Suspend/Erase Resume Commands
This product has been retired and is not available for
designs. For new and current designs, S29GL032A
supersedes Am29LV320MH/L and is the factory-rec-
ommended migration path. Please refer to the
S29GL032A datasheet for specifications and ordering
information. Availability of this document is retained for
reference and historical purposes only.
Added note on flash device performance during
suspend/erase mode.
AC Characteristics, Erase and Program Operations
Removed Byte information for tWHWH1 parameter.
Added tPOLL information and footnote.
AC Characteristics
Revision B4 (January 31, 2007)
Program Operation Timings, Data# Polling Timings
(During Embedded Algorithms, and Alternate CE#
Controlled Write (Erase/Program) Operation Timings
figures: Updated with tPOLL information.
Global
Changed SecSi Sector to Secured Silicon Sector.
AC Characteristics
AC Characteristics - Alternate CE# Controlled
Erase and Program Operations
Erase and Program Operations table: Changed tBUSY
to a maximum specification. Deleted “tVCS” from tBUSY
parameter name.
Added tPOLL information and footnote.
Erase and Programming Performance
Added tPOLL information and footnote.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-
tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-
templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion LLC will not be liable
to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-
thorization by the respective government entity will be required for export of those products.
Trademarks
Copyright © 2001–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trade-
marks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are
for identification purposes only and may be trademarks of their respective companies.
Copyright © 2006–2007 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations
thereof are trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners.
January 31, 2007 26517B4
Am29LV320MH/L
57
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