AM29LV640MU120_技术文档

ADVANCE INFORMATION

Am29LV640MU

64 Megabit (4 M x 16-Bit) MirrorBit

3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

— 4-word page read buffer

— 16-word write buffer

■ Single power supply operation

— 3 V for read, erase, and program operations

■ Low power consumption (typical values at 3.0 V, 5

MHz)

■ VersatileI/O control

— 30 mA typical active read current

— 50 mA typical erase/program current

— 1 µA typical standby mode current

— Device generates data output voltages and tolerates

data input voltages on the CE# and DQ inputs/outputs

as determined by the voltage on the V_IOpin; operates

from 1.65 to 3.6 V

■ Package options

■ Manufactured on 0.23 µm MirrorBit process

— 63-ball Fine-Pitch BGA

— 64-ball Fortified BGA

technology

■ SecSi (Secured Silicon) Sector region

SOFTWARE & HARDWARE FEATURES

— 128-word sector for permanent, secure identification

through an 8-word random Electronic Serial Number,

accessible through a command sequence

■ Software features

— Program Suspend & Resume: read other sectors

before programming operation is completed

— May be programmed and locked at the factory or by

the customer

— Erase Suspend & Resume: r ead/program other

sectors before an erase operation is completed

■ Flexible sector architecture

— Data# polling & toggle bits provide status

— One hundred twenty-eight 32 Kword sectors

— Unlock Bypass Program command reduces overall

■ Compatibility with JEDEC standards

multiple-word programming time

— Provides pinout and software compatibility for

single-power supply flash, and superior inadvertent

write protection

— CFI (Common Flash Interface) compliant: allows host

system to identify and accommodate multiple flash

devices

■ Minimum 100,000 erase cycle guarantee per sector

■ 20-year data retention at 125°C

■ Hardware features

— Sector Group Protection: hardware-level method of

preventing write operations within a sector group

PERFORMANCE CHARACTERISTICS

■ High performance

— Temporary Sector Unprotect: V_ID-level method of

changing code in locked sectors

— 90 ns access time

— ACC (high voltage) input accelerates programming

— 25 ns page read times

time for higher throughput during system production

— 0.4 s typical sector erase time

— Hardware reset input (RESET#) resets device

— 5.9 µs typical write buffer word programming time:

16-word write buffer reduces overall programming

time for multiple-word/byte updates

— Ready/Busy# output (RY/BY#) indicates program or

erase cycle completion

Publication# 25301 Rev: B Amendment/+1

Issue Date: April 26, 2002

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.4/26/02

Refer to AMD’s Website (www.amd.com) for the latest information.

A D V A N C E I N F O R M A T I O N

GENERAL DESCRIPTION

The Am29LV640MU is a 64 Mbit, 3.0 volt single power

supply flash memory device organized as 4,194,304

words. The device has a 16-bit only data bus, and can

be programmed either in the host system or in stan-

dard EPROM programmers.

and tolerates on the CE# control input and DQ I/Os to

the same voltage level that is asserted on the V_IOpin.

Refer to the Ordering Information section for valid V_IO

options.

Hardware data protection measures include a low

V_CCdetector that automatically inhibits write opera-

tions during power transitions. The hardware sector

protection feature disables both program and erase

operations in any combination of sectors of memory.

This can be achieved in-system or via programming

equipment.

An access time of 90, 100, 110, or 120 ns is available.

Note that each access time has a specific operating

voltage range (V_CC) and an I/O voltage range (V_IO), as

specified in the Product Selector Guide and the Order-

ing Information sections. The device is offered in a

63-ball Fine-Pitch BGA or 64-ball Fortified BGA pack-

age. Each device has separate chip enable (CE#),

write enable (WE#) and output enable (OE#) controls.

The Erase Suspend/Erase Resume feature allows

the host system to pause an erase operation in a

given sector to read or program any other sector and

then complete the erase operation. The Program

Suspend/Program Resume feature enables the host

system to pause a program operation in a given sector

to read any other sector and then complete the pro-

gram operation.

Each device requires only a single 3.0 volt power

supply for both read and write functions. In addition to

a V_CCinput, a high-voltage accelerated program

(ACC) input provides shorter programming times

through increased current. This feature is intended to

facilitate factory throughput during system production,

but may also be used in the field if desired.

The hardware RESET# pin terminates any operation

in progress and resets the device, after which it is then

ready for a new operation. The RESET# pin may be

tied to the system reset circuitry. A system reset would

thus also reset the device, enabling the host system to

read boot-up firmware from the Flash memory device.

The device is entirely command set compatible with

the JEDEC single-power-supply Flash standard.

Commands are written to the device using standard

microprocessor write timing. Write cycles also inter-

nally latch addresses and data needed for the pro-

gramming and erase operations.

The device reduces power consumption in the

standby mode when it detects specific voltage levels

on CE# and RESET#, or when addresses have been

stable for a specified period of time.

The sector erase architecture allows memory sec-

tors to be erased and reprogrammed without affecting

the data contents of other sectors. The device is fully

erased when shipped from the factory.

The SecSi (Secured Silicon) Sector provides a

128-word area for code or data that can be perma-

nently protected. Once this sector is protected, no fur-

ther changes within the sector can occur.

Device programming and erasure are initiated through

command sequences. Once a program or erase oper-

ation has begun, the host system need only poll the

DQ7 (Data# Polling) or DQ6 (toggle) status bits or

monitor the Ready/Busy# (RY/BY#) output to deter-

mine whether the operation is complete. To facilitate

programming, an Unlock Bypass mode reduces com-

mand sequence overhead by requiring only two write

cycles to program data instead of four.

AMD MirrorBit flash technology combines years of

Flash memory manufacturing experience to produce

the highest levels of quality, reliability and cost effec-

tiveness. The device electrically erases all bits within a

sector simultaneously via hot-hole assisted erase. The

data is programmed using hot electron injection.

The VersatileI/O™ (V_IO) control allows the host sys-

tem to set the voltage levels that the device generates

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Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

MIRRORBIT 64 MBIT DEVICE FAMILY

Device

Bus

Sector Architecture

Packages

V_IO

RY/BY#

WP#, ACC

WP# Protection

48-pin TSOP (std. & rev. pinout),

63-ball FBGA

LV065MU

x8

Uniform (64 Kbyte)

Yes

ACC only

No WP#

Boot (8 x 8 Kbyte

at top & bottom)

48-pin TSOP, 63-ball Fine-pitch BGA,

64-ball Fortified BGA

2 x 8 Kbyte

top or bottom

LV640MT/B

LV640MH/L

x8/x16

No

Yes

WP#/ACC pin

56-pin TSOP (std. & rev. pinout),

64 Fortified BGA

1 x 64 Kbyte

high or low

Uniform (64 Kbyte)

Yes

Separate WP#

and ACC pins

1 x 32 Kword

top or bottom

LV641MH/L

LV640MU

x16

Uniform (32 Kword)

48-pin TSOP (std. & rev. pinout)

63-ball Fine-pitch BGA

Yes

No

Yes

ACC only

No WP#

RELATED DOCUMENTS

To download related documents, click on the following

links or go to www.amd.com→Flash Memory→Prod-

uct Information→MirrorBit→Flash Information→Tech-

nical Documentation.

Implementing a Common Layout for AMD MirrorBit

and Intel StrataFlash Memory Devices

AMD MirrorBit™ White Paper

Migrating from Single-byte to Three-byte Device IDs

MirrorBit™ Flash Memory Write Buffer Programming

and Page Buffer Read

Migration from Am29LV640DU to MirrorBit

Am29LV640MU

April 26, 2002

Am29LV640MU

3

A D V A N C E I N F O R M A T I O N

TABLE OF CONTENTS

Figure 6. Erase Operation.............................................................. 30

Command Definitions ............................................................. 31

Table 10. Command Definitions...................................................... 31

Write Operation Status. . . . . . . . . . . . . . . . . . . . . 32

DQ7: Data# Polling ................................................................. 32

Figure 7. Data# Polling Algorithm .................................................. 32

RY/BY#: Ready/Busy#............................................................ 33

DQ6: Toggle Bit I .................................................................... 33

Figure 8. Toggle Bit Algorithm........................................................ 34

DQ2: Toggle Bit II ................................................................... 34

Reading Toggle Bits DQ6/DQ2 ............................................... 34

DQ5: Exceeded Timing Limits ................................................ 35

DQ3: Sector Erase Timer .......................................................35

DQ1: Write-to-Buffer Abort ..................................................... 35

Table 11. Write Operation Status ................................................... 35

Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 36

Figure 9. Maximum Negative Overshoot Waveform ..................... 36

Figure 10. Maximum Positive Overshoot Waveform..................... 36

Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 36

DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 37

Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 38

Figure 11. Test Setup.................................................................... 38

Table 12. Test Specifications ......................................................... 38

Key to Switching Waveforms. . . . . . . . . . . . . . . . 38

Figure 12. Input Waveforms and

MirrorBit 64 Mbit Device Family . . . . . . . . . . . . . . 3

Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 6

Special Package Handling Instructions .................................... 7

Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9

Device Bus Operations . . . . . . . . . . . . . . . . . . . . 10

Table 1. Device Bus Operations .....................................................10

VersatileIO (V_IO) Control .....................................................10

Requirements for Reading Array Data ...................................10

Page Mode Read .................................................................... 11

Writing Commands/Command Sequences ............................ 11

Write Buffer ............................................................................. 11

Accelerated Program Operation ............................................. 11

Autoselect Functions .............................................................. 11

Standby Mode ........................................................................ 11

Automatic Sleep Mode ........................................................... 11

RESET#: Hardware Reset Pin ............................................... 12

Output Disable Mode .............................................................. 12

Table 2. Sector Address Table ........................................................13

Autoselect Mode..................................................................... 15

Table 3. Autoselect Codes, (High Voltage Method) .......................15

Sector Group Protection and Unprotection ............................. 16

Table 4. Sector Group Protection/Unprotection Address Table .....16

Temporary Sector Group Unprotect ....................................... 17

Figure 1. Temporary Sector Group Unprotect Operation................ 17

Figure 2. In-System Sector Group Protect/Unprotect Algorithms ... 18

SecSi (Secured Silicon) Sector Flash Memory Region .......... 19

Table 5. SecSi Sector Contents ......................................................19

Hardware Data Protection ......................................................19

Low VCC Write Inhibit ............................................................ 19

Write Pulse “Glitch” Protection ............................................... 20

Logical Inhibit .......................................................................... 20

Power-Up Write Inhibit ............................................................ 20

Common Flash Memory Interface (CFI) . . . . . . . 20

Table 6. CFI Query Identification String .............................. 20

Table 7. System Interface String......................................................21

Table 8. Device Geometry Definition................................... 21

Table 9. Primary Vendor-Specific Extended Query............. 22

Command Definitions . . . . . . . . . . . . . . . . . . . . . 22

Reading Array Data ................................................................ 22

Reset Command ..................................................................... 23

Autoselect Command Sequence ............................................ 23

Enter SecSi Sector/Exit SecSi Sector Command Sequence .. 23

Word Program Command Sequence ..................................... 23

Unlock Bypass Command Sequence ..................................... 24

Write Buffer Programming ......................................................24

Accelerated Program .............................................................. 25

Figure 3. Write Buffer Programming Operation............................... 26

Figure 4. Program Operation .......................................................... 27

Program Suspend/Program Resume Command Sequence ... 27

Figure 5. Program Suspend/Program Resume............................... 28

Chip Erase Command Sequence ........................................... 28

Sector Erase Command Sequence ........................................ 28

Erase Suspend/Erase Resume Commands ........................... 29

Measurement Levels...................................................................... 38

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 39

Read-Only Operations ........................................................... 39

Figure 13. Read Operation Timings............................................... 39

Figure 14. Page Read Timings ...................................................... 40

Hardware Reset (RESET#) .................................................... 41

Figure 15. Reset Timings............................................................... 41

Erase and Program Operations .............................................. 42

Figure 16. Program Operation Timings.......................................... 43

Figure 17. Accelerated Program Timing Diagram.......................... 43

Figure 18. Chip/Sector Erase Operation Timings .......................... 44

Figure 19. Data# Polling Timings

(During Embedded Algorithms)...................................................... 45

Figure 20. Toggle Bit Timings

(During Embedded Algorithms)...................................................... 46

Figure 21. DQ2 vs. DQ6................................................................. 46

Temporary Sector Unprotect .................................................. 47

Figure 22. Temporary Sector Group Unprotect Timing Diagram ... 47

Figure 23. Sector Group Protect and Unprotect Timing Diagram .. 48

Alternate CE# Controlled Erase and Program Operations ..... 49

Figure 24. Alternate CE# Controlled Write (Erase/Program)

Operation Timings.......................................................................... 50

Erase And Programming Performance. . . . . . . . 51

Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 51

TSOP Pin Capacitance . . . . . . . . . . . . . . . . . . . . . 51

Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 51

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 52

LAA064—64-Ball Fortified Ball Grid Array (FBGA)

13 x 11 mm Package .............................................................. 52

FBE063—63-Ball Fine-Pitch Ball Grid Array (FBGA)

12 x 11 mm Package .............................................................. 53

Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 54

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Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

PRODUCT SELECTOR GUIDE

Part Number

Am29LV640MU

90R

V_CC= 3.0–3.6 V

V_CC= 2.7–3.6 V

(V_IO= 3.0–3.6 V)

Speed Option

101

112

120

(V_IO= 2.7–3.6 V)

(V_IO= 1.65–3.6 V)

Max. Access Time (ns)

90

25

100

30

110

40

120

40

Max. CE# Access Time (ns)

Max. Page access time (t_PACC

Max. OE# Access Time (ns)

)

30

40

Note: See “AC Characteristics” for full specifications.

BLOCK DIAGRAM

DQ0–DQ15

RY/BY#

V_CC

Sector Switches

V_SS

V_IO

Erase Voltage

Generator

Input/Output

Buffers

RESET#

WE#

State

ACC

Control

Command

Register

PGM Voltage

Generator

Data

Latch

Chip Enable

Output Enable

Logic

STB

CE#

OE#

Y-Decoder

Y-Gating

STB

V_CCDetector

Timer

Cell Matrix

X-Decoder

A21–A0

April 26, 2002

Am29LV640MU

5

A D V A N C E I N F O R M A T I O N

CONNECTION DIAGRAMS

64-Ball Fortified BGA (FBGA)

Top View, Balls Facing Down

A8

B8

C8

D8

E8

F8

G8

NC

H8

NC

V_IO

V_SS

NC

A7

B7

C7

D7

E7

F7

G7

H7

A13

A12

A14

A15

A16

NC

DQ15/A-1 V_SS

A6

A9

B6

A8

C6

D6

E6

F6

G6

H6

DQ6

A10

A11

DQ7

DQ14

DQ13

A5

B5

C5

D5

E5

F5

G5

H5

WE# RESET#

A21

A19

DQ5

DQ12

V_CC

DQ4

A4

B4

C4

D4

E4

F4

G4

H4

RY/BY#

ACC

A18

A20

DQ2

DQ10

DQ11

DQ3

A3

A7

B3

C3

A6

D3

A5

E3

F3

G3

H3

A17

DQ0

DQ8

DQ9

DQ1

A2

A3

B2

A4

C2

A2

D2

A1

E2

A0

F2

G2

H2

CE#

OE#

V_SS

A1

B1

C1

D1

E1

F1

G1

NC

H1

NC

V_IO

NC

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Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

CONNECTION DIAGRAMS

63-Ball Fine-Pitch BGA (FBGA)

Top View, Balls Facing Down

L8

M8

A8

B8

NC

NC*

A7

B7

C7

D7

E7

F7

G7

H7

J7

K7

L7

M7

V_SS

NC

NC*

A13

A12

A14

A15

A16

V_IO

DQ15

C6

A9

D6

A8

E6

F6

G6

H6

J6

K6

A10

A11

DQ7

DQ14

DQ13

DQ6

C5

D5

E5

F5

G5

H5

J5

K5

V_CC

WE# RESET#

A21

A19

DQ5

DQ12

DQ4

C4

D4

E4

F4

G4

H4

J4

K4

RY/BY#

ACC

A18

A20

DQ2

DQ10

DQ11

DQ3

C3

A7

D3

E3

A6

F3

A5

G3

H3

J3

K3

A17

DQ0

DQ8

DQ9

DQ1

C2

A3

D2

A4

E2

A2

F2

A1

G2

A0

H2

J2

K2

L2

M2

A2

V_SS

CE#

OE#

NC*

A1

B1

L1

M1

* Balls are shorted together via the substrate but not connected to the die.

NC*

compromised if the package body is exposed to

temperatures above 150°C for prolonged periods of

time.

Special Package Handling Instructions

Special handling is required for Flash Memory products

in molded packages (TSOP, BGA, SSOP, PDIP,

PLCC). The package and/or data integrity may be

April 26, 2002

Am29LV640MU

7

A D V A N C E I N F O R M A T I O N

PIN DESCRIPTION

LOGIC SYMBOL

A21–A0

= 22 Address inputs

22

DQ15–DQ0 = 15 Data inputs/outputs

A21–A0

16

CE#

= Chip Enable input

DQ15–DQ0

CE#

OE#

WE#

OE#

= Output Enable input

= Write Enable input

WE#

ACC

= Programming Acceleration input

= Hardware Reset Pin input

= Ready/Busy output

ACC

RESET#

RY/BY#

V_CC

RESET#

V_IO

RY/BY#

= 3.0 volt-only single power supply

(see Product Selector Guide for

speed options and voltage

supply tolerances)

V_IO

V_SS

NC

= Output Buffer power

= Device Ground

= Pin Not Connected Internally

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Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

ORDERING INFORMATION

Standard Products

AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is

formed by a combination of the following:

Am29LV640M

U

90R

PC

I

TEMPERATURE RANGE

Industrial (–40°C to +85°C)

I

=

PACKAGE TYPE

PC

=

64-Ball Fortified Ball Grid Array (FBGA),

1.0 mm pitch, 13 x 11 mm package (LAA064)

WH

=

63-Ball Fine Pitch Ball Grid Array (FBGA),

0.80 mm pitch, 12 x 11 mm package (FBE063)

SPEED OPTION

See Product Selector Guide and Valid Combinations

SECTOR ARCHITECTURE

U

=

Uniform sector device (WP# not available)

DEVICE NUMBER/DESCRIPTION

Am29LV640MU

64 Megabit (4 M x 16-Bit) MirrorBit Uniform Sector Flash Memory

with VersatileIO Control, 3.0 Volt-only Read, Program, and Erase

Valid Combinations

Valid Combinations for

Fortified or Fine-Pitch BGA Package

Speed

(ns)

V_IO

V_CC

Valid Combinations list configurations planned to be supported in vol-

ume for this device. Consult the local AMD sales office to confirm

availability of specific valid combinations and to check on newly re-

leased combinations.

Range Range

Order Number

Package Marking

WHI L640MU90R

3.0–

3.6 V

3.0–

3.6 V

Am29LV640MU90R

90

PCI L640MU90N

WHI L640MU01V

PCI L640MU01P

WHI L640MU11V

PCI L640MU11P

WHI, L640MU12V

PCI L640MU12P

2.7–

3.6 V

Am29LV640MU101

Am29LV640MU102

Am29LV640MU120

100

110

120

I

1.65–

3.6 V

2.7–

3.6 V

1.65–

3.6 V

April 26, 2002

Am29LV640MU

9

A D V A N C E I N F O R M A T I O N

DEVICE BUS OPERATIONS

This section describes the requirements and use of

the device bus operations, which are initiated through

the internal command register. The command register

itself does not occupy any addressable memory loca-

tion. The register is a latch used to store the com-

mands, along with the address and data information

needed to execute the command. The contents of the

register serve as inputs to the internal state machine.

The state machine outputs dictate the function of the

device. Table 1 lists the device bus operations, the in-

puts and control levels they require, and the resulting

output. The following subsections describe each of

these operations in further detail.

Table 1. Device Bus Operations

Addresses

(Note 2)

DQ0–

DQ15

Operation

CE#

OE# WE# RESET#

ACC

X

Read

L

H

L

H

A_IN

D_OUT

Write (Program/Erase)

Accelerated Program

(Note 3)

X

H

V_HH

V_CC

0.3 V

±

V_CC±

0.3 V

Standby

X

High-Z

H

Output Disable

Reset

L

H

X

H

X

H

L

X

High-Z

X

SA, A6=L, A3=L,

A2=L, A1=H, A0=L

Sector Group Protect (Note 2)

L

X

H

X

L

X

V_ID

X

(Note 3)

Sector Group Unprotect

(Note 2)

SA, A6=H, A3=L,

A2=L, A1=H, A0=L

Temporary Sector Group

Unprotect

A_IN

Legend: L = Logic Low = V_IL, H = Logic High = V_IH, V_ID= 11.5–12.5 V, V_HH= 11.5–12.5 V, X = Don’t Care, SA = Sector Address,

A_IN= Address In, D_IN= Data In, D_OUT= Data Out

Notes:

1. Addresses are A21:A0. Sector addresses are A21:A15.

2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Group

Protection and Unprotection” section.

3. D_INor D_OUTas required by command sequence, data polling, or sector protect algorithm (see Figure 2).

trol and gates array data to the output pins. WE#

should remain at V_IH.

VersatileIO (V_IO) Control

The VersatileIO™ (V_IO) control allows the host system

to set the voltage levels that the device generates and

tolerates on CE# and DQ I/Os to the same voltage

level that is asserted on V_IO. See “Ordering Informa-

tion” on page 9 for V_IOoptions on this device.

The internal state machine is set for reading array data

upon device power-up, or after a hardware reset. This

ensures that no spurious alteration of the memory

content occurs during the power transition. No com-

mand is necessary in this mode to obtain array data.

Standard microprocessor read cycles that assert valid

addresses on the device address inputs produce valid

data on the device data outputs. The device remains

enabled for read access until the command register

contents are altered.

For example, a V_I/Oof 1.65–3.6 volts allows for I/O at

the 1.8 or 3 volt levels, driving and receiving signals to

and from other 1.8 or 3 V devices on the same data

bus.

Requirements for Reading Array Data

See “Reading Array Data” for more information. Refer

to the AC Read-Only Operations table for timing spec-

ifications and to Figure 13 for the timing diagram.

To read array data from the outputs, the system must

drive the CE# and OE# pins to V_IL. CE# is the power

control and selects the device. OE# is the output con-

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Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

Refer to the DC Characteristics table for the active

current specification for reading array data.

If the system asserts V_HHon this pin, the device auto-

matically enters the aforementioned Unlock Bypass

mode, temporarily unprotects any protected sectors,

and uses the higher voltage on the pin to reduce the

time required for program operations. The system

would use a two-cycle program command sequence

as required by the Unlock Bypass mode. Removing

Page Mode Read

The device is capable of fast page mode read and is

compatible with the page mode Mask ROM read oper-

ation. This mode provides faster read access speed

for random locations within a page. The page size of

the device is 4 words. The appropriate page is se-

lected by the higher address bits A(max)–A2. Address

bits A1–A0 determine the specific word within a page.

This is an asynchronous operation; the microproces-

sor supplies the specific word location.

V

_HHfrom the ACC pin returns the device to normal op-

eration. Note that the ACC pin must not be at V_HHfor

operations other than accelerated programming, or

device damage may result.

Autoselect Functions

If the system writes the autoselect command se-

quence, the device enters the autoselect mode. The

system can then read autoselect codes from the inter-

nal register (which is separate from the memory array)

on DQ7–DQ0. Standard read cycle timings apply in

this mode. Refer to the Autoselect Mode and Autose-

lect Command Sequence sections for more informa-

tion.

The random or initial page access is equal to t_ACCor

t_CEand subsequent page read accesses (as long as

the locations specified by the microprocessor falls

within that page) is equivalent to t_PACC. When CE# is

deasserted and reasserted for a subsequent access,

the access time is t_ACCor t_CE. Fast page mode ac-

cesses are obtained by keeping the “read-page ad-

dresses” constant and changing the “intra-read page”

addresses.

Standby Mode

When the system is not reading or writing to the de-

vice, it can place the device in the standby mode. In

this mode, current consumption is greatly reduced,

and the outputs are placed in the high impedance

state, independent of the OE# input.

Writing Commands/Command Sequences

To write a command or command sequence (which in-

cludes programming data to the device and erasing

sectors of memory), the system must drive WE# and

CE# to V_IL, and OE# to V_IH.

The device enters the CMOS standby mode when the

CE# and RESET# pins are both held at V_IO± 0.3 V.

(Note that this is a more restricted voltage range than

V_IH.) If CE# and RESET# are held at V_IH, but not within

The device features an Unlock Bypass mode to facil-

itate faster programming. Once the device enters the

Unlock Bypass mode, only two write cycles are re-

quired to program a word, instead of four. The “Word

Program Command Sequence” section has details on

programming data to the device using both standard

and Unlock Bypass command sequences.

V

_IO± 0.3 V, the device will be in the standby mode, but

the standby current will be greater. The device re-

quires standard access time (t_CE) for read access

when the device is in either of these standby modes,

before it is ready to read data.

An erase operation can erase one sector, multiple sec-

tors, or the entire device. Table 2 indicates the address

space that each sector occupies.

If the device is deselected during erasure or program-

ming, the device draws active current until the

operation is completed.

Refer to the DC Characteristics table for the active

current specification for the write mode. The AC Char-

acteristics section contains timing specification tables

and timing diagrams for write operations.

Refer to the DC Characteristics table for the standby

current specification.

Automatic Sleep Mode

Write Buffer

The automatic sleep mode minimizes Flash device en-

ergy consumption. The device automatically enables

Write Buffer Programming allows the system to write a

maximum of 16 words in one programming operation.

This results in faster effective programming time than

the standard programming algorithms. See “Write

Buffer” for more information.

this mode when addresses remain stable for t_ACC

+

30 ns. The automatic sleep mode is independent of

the CE#, WE#, and OE# control signals. Standard ad-

dress access timings provide new data when ad-

dresses are changed. While in sleep mode, output

data is latched and always available to the system.

Refer to the DC Characteristics table for the automatic

sleep mode current specification.

Accelerated Program Operation

The device offers accelerated program operations

through the ACC function. This function is primarily in-

tended to allow faster manufacturing throughput dur-

ing system production.

April 26, 2002

Am29LV640MU

11

A D V A N C E I N F O R M A T I O N

memory, enabling the system to read the boot-up firm-

ware from the Flash memory.

RESET#: Hardware Reset Pin

The RESET# pin provides a hardware method of re-

setting the device to reading array data. When the RE-

SET# pin is driven low for at least a period of t_RP, the

device immediately terminates any operation in

progress, tristates all output pins, and ignores all

read/write commands for the duration of the RESET#

pulse. The device also resets the internal state ma-

chine to reading array data. The operation that was in-

terrupted should be reinitiated once the device is

ready to accept another command sequence, to en-

sure data integrity.

If RESET# is asserted during a program or erase op-

eration, the RY/BY# pin remains a “0” (busy) until the

internal reset operation is complete, which requires a

time of t_READY(during Embedded Algorithms). The

system can thus monitor RY/BY# to determine

whether the reset operation is complete. If RESET# is

asserted when a program or erase operation is not ex-

ecuting (RY/BY# pin is “1”), the reset operation is com-

pleted within a time of t_READY(not during Embedded

Algorithms). The system can read data t_RHafter the

RESET# pin returns to V_IH.

Current is reduced for the duration of the RESET#

pulse. When RESET# is held at V_SS±0.3 V, the device

draws CMOS standby current. If RESET# is held at V_IL

but not within V_SS±0.3 V, the standby current will be

greater.

Refer to the AC Characteristics tables for RESET# pa-

rameters and to Figure 15 for the timing diagram.

Output Disable Mode

When the OE# input is at V_IH, output from the device is

disabled. The output pins are placed in the high

impedance state.

The RESET# pin may be tied to the system reset cir-

cuitry. A system reset would thus also reset the Flash

12

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

Table 2. Sector Address Table

16-bit

Address Range

(in hexadecimal)

Sector

SA0

A21–A15

(in hexadecimal)

000000–007FFF

008000–00FFFF

010000–017FFF

018000–01FFFF

020000–027FFF

028000–02FFFF

030000–037FFF

038000–03FFFF

040000–047FFF

048000–04FFFF

050000–057FFF

058000–05FFFF

060000–067FFF

068000–06FFFF

070000–077FFF

078000–07FFFF

080000–087FFF

088000–08FFFF

090000–097FFF

098000–09FFFF

0A0000–0A7FFF

0A8000–0AFFFF

0B0000–0B7FFF

0B8000–0BFFFF

0C0000–0C7FFF

0C8000–0CFFFF

0D0000–0D7FFF

0D8000–0DFFFF

0E0000–0E7FFF

0E8000–0EFFFF

0F0000–0F7FFF

0F8000–0FFFFF

Sector

SA32

SA33

SA34

SA35

SA36

SA37

SA38

SA39

SA40

SA41

SA42

SA43

SA44

SA45

SA46

SA47

SA48

SA49

SA50

SA51

SA52

SA53

SA54

SA55

SA56

SA57

SA58

SA59

SA60

SA61

SA62

SA63

A21–A15

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

100000–107FFF

108000–10FFFF

110000–117FFF

118000–11FFFF

120000–127FFF

128000–12FFFF

130000–137FFF

138000–13FFFF

140000–147FFF

148000–14FFFF

150000–157FFF

158000–15FFFF

160000–167FFF

168000–16FFFF

170000–177FFF

178000–17FFFF

180000–187FFF

188000–18FFFF

190000–197FFF

198000–19FFFF

1A0000–1A7FFF

1A8000–1AFFFF

1B0000–1B7FFF

1B8000–1BFFFF

1C0000–1C7FFF

1C8000–1CFFFF

1D0000–1D7FFF

1D8000–1DFFFF

1E0000–1E7FFF

1E8000–1EFFFF

1F0000–1F7FFF

1F8000–1FFFFF

SA1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

SA2

SA3

SA4

SA5

SA6

SA7

SA8

SA9

SA10

SA11

SA12

SA13

SA14

SA15

SA16

SA17

SA18

SA19

SA20

SA21

SA22

SA23

SA24

SA25

SA26

SA27

SA28

SA29

SA30

SA31

April 26, 2002

Am29LV640MU

13

A D V A N C E I N F O R M A T I O N

Table 2. Sector Address Table (Continued)

16-bit

Address Range

(in hexadecimal)

Sector

SA64

SA65

SA66

SA67

SA68

SA69

SA70

SA71

SA72

SA73

SA74

SA75

SA76

SA77

SA78

SA79

SA80

SA81

SA82

SA83

SA84

SA85

SA86

SA87

SA88

SA89

SA90

SA91

SA92

SA93

SA94

SA95

A21–A15

(in hexadecimal)

200000–207FFF

208000–20FFFF

210000–217FFF

218000–21FFFF

220000–227FFF

228000–22FFFF

230000–237FFF

238000–23FFFF

240000–247FFF

248000–24FFFF

250000–257FFF

258000–25FFFF

260000–267FFF

268000–26FFFF

270000–277FFF

278000–27FFFF

280000–287FFF

288000–28FFFF

290000–297FFF

298000–29FFFF

2A0000–2A7FFF

2A8000–2AFFFF

2B0000–2B7FFF

2B8000–2BFFFF

2C0000–2C7FFF

2C8000–2CFFFF

2D0000–2D7FFF

2D8000–2DFFFF

2E0000–2E7FFF

2E8000–2EFFFF

2F0000–2F7FFF

2F8000–2FFFFF

Sector

SA96

A21–A15

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

300000–307FFF

308000–30FFFF

310000–317FFF

318000–31FFFF

320000–327FFF

328000–32FFFF

330000–337FFF

338000–33FFFF

340000–347FFF

348000–34FFFF

350000–357FFF

358000–35FFFF

360000–367FFF

368000–36FFFF

370000–377FFF

378000–37FFFF

380000–387FFF

388000–38FFFF

390000–397FFF

398000–39FFFF

3A0000–3A7FFF

3A8000–3AFFFF

3B0000–3B7FFF

3B8000–3BFFFF

3C0000–3C7FFF

3C8000–3CFFFF

3D0000–3D7FFF

3D8000–3DFFFF

3E0000–3E7FFF

3E8000–3EFFFF

3F0000–3F7FFF

3F8000–3FFFFF

0

1

0

1

0

1

0

1

0

1

SA97

0

1

0

1

0

1

0

1

0

1

SA98

SA99

SA100

SA101

SA102

SA103

SA104

SA105

SA106

SA107

SA108

SA109

SA110

SA111

SA112

SA113

SA114

SA115

SA116

SA117

SA118

SA119

SA120

SA121

SA122

SA123

SA124

SA125

SA126

SA127

Note: All sectors are 32 Kwords in size.

14

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

In addition, when verifying sector protection, the sector

Autoselect Mode

address must appear on the appropriate highest order

address bits (see Table 2). Table 3 shows the remain-

ing address bits that are don’t care. When all neces-

sary bits have been set as required, the programming

equipment may then read the corresponding identifier

code on DQ7–DQ0.

The autoselect mode provides manufacturer and de-

vice identification, and sector protection verification,

through identifier codes output on DQ7–DQ0. This

mode is primarily intended for programming equip-

ment to automatically match a device to be pro-

grammed with its corresponding programming

algorithm. However, the autoselect codes can also be

accessed in-system through the command register.

To access the autoselect codes in-system, the host

system can issue the autoselect command via the

command register, as shown in Table 10. This method

does not require V_ID. Refer to the Autoselect Com-

mand Sequence section for more information.

When using programming equipment, the autoselect

mode requires V_IDon address pin A9. Address pins

A6, A3, A2, A1, and A0 must be as shown in Table 3.

Table 3. Autoselect Codes, (High Voltage Method)

A21

to

A14

to

A8

to

A5

to

A3

to

Description

CE# OE# WE#

A9

A6

A1

A0

DQ15 to DQ0

A15

A10

A7

A4

A2

V_ID

Manufacturer ID: AMD

Cycle 1

L

H

X

L

X

L

H

L

0001h

227Eh

2213h

2201h

L

V_ID

Cycle 2

X

L

X

H

Cycle 3

H

Sector Protection

Verification

XX01h (protected),

XX00h (unprotected)

V_ID

L

H

SA

X

L

X

L

H

L

SecSi Sector Indicator Bit

(DQ7)

XX88h (factory locked),

XX08h (not factory locked)

H

Legend: L = Logic Low = V_IL, H = Logic High = V_IH, SA = Sector Address, X = Don’t care.

April 26, 2002

Am29LV640MU

15

A D V A N C E I N F O R M A T I O N

Table 4. Sector Group Protection/Unprotection

Address Table

Sector Group Protection and

Unprotection

Sector Group

A21–A17

00000

00001

00010

00011

00100

00101

00110

00111

01000

01001

01010

01011

01100

01101

01110

01111

10000

10001

10010

10011

10100

10101

10110

10111

11000

11001

11010

11011

11100

11101

11110

11111

The hardware sector group protection feature disables

both program and erase operations in any sector

group. In this device, a sector group consists of four

adjacent sectors that are protected or unprotected at

the same time (see Table 4). The hardware sector

group unprotection feature re-enables both program

and erase operations in previously protected sector

groups. Sector group protection/unprotection can be

implemented via two methods.

SA0–SA3

SA4–SA7

SA8–SA11

SA12–SA15

SA16–SA19

SA20–SA23

SA24–SA27

SA28–SA31

SA32–SA35

SA36–SA39

SA40–SA43

SA44–SA47

SA48–SA51

SA52–SA55

SA56–SA59

SA60–SA63

SA64–SA67

SA68–SA71

SA72–SA75

SA76–SA79

SA80–SA83

SA84–SA87

SA88–SA91

SA92–SA95

SA96–SA99

SA100–SA103

SA104–SA107

SA108–SA111

SA112–SA115

SA116–SA119

SA120–SA123

SA124–SA127

Sector protection/unprotection requires V_IDon the RE-

SET# pin only, and can be implemented either in-sys-

tem or via programming equipment. Figure 2 shows

the algorithms and Figure 23 shows the timing dia-

gram. This method uses standard microprocessor bus

cycle timing. For sector group unprotect, all unpro-

tected sector groups must first be protected prior to

the first sector group unprotect write cycle.

The device is shipped with all sector groups unpro-

tected. AMD offers the option of programming and

protecting sector groups at its factory prior to shipping

the device through AMD’s ExpressFlash™ Service.

Contact an AMD representative for details.

It is possible to determine whether a sector group is

protected or unprotected. See the Autoselect Mode

section for details.

Note: All sector groups are 128 Kwords in size.

16

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

Temporary Sector Group Unprotect

(Note: In this device, a sector group consists of four adjacent

sectors that are protected or unprotected at the same time

(see Table 4).

START

This feature allows temporary unprotection of previ-

ously protected sector groups to change data in-sys-

tem. The Sector Group Unprotect mode is activated by

setting the RESET# pin to V_ID. During this mode, for-

merly protected sector groups can be programmed or

erased by selecting the sector group addresses. Once

V_IDis removed from the RESET# pin, all the previ-

ously protected sector groups are protected again.

Figure 1 shows the algorithm, and Figure 22 shows

the timing diagrams, for this feature.

RESET# = V_ID

(Note 1)

Perform Erase or

Program Operations

RESET# = V_IH

Temporary Sector

Group Unprotect

Completed (Note 2)

Notes:

1. All protected sector groups unprotected.

2. All previously protected sector groups are protected

once again.

Figure 1. Temporary Sector Group

Unprotect Operation

April 26, 2002

Am29LV640MU

17

A D V A N C E I N F O R M A T I O N

START

PLSCNT = 1

RESET# = V_ID

Protect all sector

groups: The indicated

portion of the sector

group protect algorithm

must be performed for all

unprotected sector

groups prior to issuing

the first sector group

unprotect address

RESET# = V_ID

Wait 1 µs

Temporary Sector

Group Unprotect

Mode

Temporary Sector

Group Unprotect

Mode

No

First Write

Cycle = 60h?

First Write

Cycle = 60h?

Yes

Set up sector

group address

All sector

groups

No

protected?

Yes

Sector Group Protect:

Write 60h to sector

group address with

A6–A0 = 0xx0010

Set up first sector

group address

Sector Group

Unprotect:

Wait 150 µs

Write 60h to sector

group address with

A6–A0 = 1xx0010

Verify Sector Group

Protect: Write 40h

to sector group

address with

A6–A0 = 0xx0010

Reset

PLSCNT = 1

Increment

PLSCNT

Wait 15 ms

Verify Sector Group

Unprotect: Write

40h to sector group

address with

Read from

sector group address

with A6–A0

= 0xx0010

Increment

PLSCNT

A6–A0 = 1xx0010

No

PLSCNT

= 25?

Read from

sector group

address with

Data = 01h?

Yes

A6–A0 = 1xx0010

No

Yes

Set up

next sector group

address

Protect

another

sector group?

Yes

No

PLSCNT

= 1000?

Data = 00h?

Yes

Device failed

No

Yes

Remove V_ID

from RESET#

Last sector

group

verified?

No

Device failed

Write reset

command

Yes

Remove V_ID

from RESET#

Sector Group

Unprotect

Sector Group

Protect

Sector Group

Protect complete

Write reset

command

Algorithm

Sector Group

Unprotect complete

Figure 2. In-System Sector Group Protect/Unprotect Algorithms

Am29LV640MU

18

April 26, 2002

A D V A N C E I N F O R M A T I O N

representative for details on using AMD’s Express-

SecSi (Secured Silicon) Sector Flash

Memory Region

Flash service.

The SecSi (Secured Silicon) Sector feature provides a

Flash memory region that enables permanent part

identification through an Electronic Serial Number

(ESN). The SecSi Sector is 128 words in length, and

uses a SecSi Sector Indicator Bit (DQ7) to indicate

whether or not the SecSi Sector is locked when

shipped from the factory. This bit is permanently set at

the factory and cannot be changed, which prevents

cloning of a factory locked part. This ensures the secu-

rity of the ESN once the product is shipped to the field.

Customer Lockable: SecSi Sector NOT

Programmed or Protected At the Factory

As an alternative to the factory-locked version, the de-

vice may be ordered such that the customer may pro-

gram and protect the 128-word SecSi sector.

The system may program the SecSi Sector using the

write-buffer, accelerated and/or unlock bypass meth-

ods, in addition to the standard programming com-

mand sequence. See Command Definitions.

AMD offers the device with the SecSi Sector either

factory locked or customer lockable. The fac-

tory-locked version is always protected when shipped

from the factory, and has the SecSi (Secured Silicon)

Sector Indicator Bit permanently set to a “1.” The cus-

tomer-lockable version is shipped with the SecSi Sec-

tor unprotected, allowing customers to program the

sector after receiving the device. The customer-lock-

able version also has the SecSi Sector Indicator Bit

permanently set to a “0.” Thus, the SecSi Sector Indi-

cator Bit prevents customer-lockable devices from

being used to replace devices that are factory locked.

Programming and protecting the SecSi Sector must be

used with caution since, once protected, there is no

procedure available for unprotecting the SecSi Sector

area and none of the bits in the SecSi Sector memory

space can be modified in any way.

The SecSi Sector area can be protected using one of

the following procedures:

■ Write the three-cycle Enter SecSi Sector Region

command sequence, and then follow the in-system

sector protect algorithm as shown in Figure 2, ex-

cept that RESET# may be at either V_IHor V_ID. This

allows in-system protection of the SecSi Sector

without raising any device pin to a high voltage.

Note that this method is only applicable to the SecSi

Sector.

The SecSi sector address space in this device is allo-

cated as follows:

Table 5. SecSi Sector Contents

SecSi Sector

Address Range

Standard

Factory Locked Factory Locked

ExpressFlash

Customer

Lockable

■ Write the three-cycle Enter SecSi Sector Region

command sequence, and then use the alternate

method of sector protection described in the “Sector

Group Protection and Unprotection” section.

ESN or

determined by

customer

000000h–000007h

000008h–00007Fh

ESN

Determined by

customer

Determined by

customer

Unavailable

Once the SecSi Sector is programmed, locked and

verified, the system must write the Exit SecSi Sector

Region command sequence to return to reading and

writing within the remainder of the array.

The system accesses the SecSi Sector through a

command sequence (see “Enter SecSi Sector/Exit

SecSi Sector Command Sequence”). After the system

has written the Enter SecSi Sector command se-

quence, it may read the SecSi Sector by using the ad-

dresses normally occupied by the first sector (SA0).

This mode of operation continues until the system is-

sues the Exit SecSi Sector command sequence, or

until power is removed from the device. On power-up,

or following a hardware reset, the device reverts to

sending commands to sector SA0.

Hardware Data Protection

The command sequence requirement of unlock cycles

for programming or erasing provides data protection

against inadvertent writes (refer to Table 10 for com-

mand definitions). In addition, the following hardware

data protection measures prevent accidental erasure

or programming, which might otherwise be caused by

spurious system level signals during V_CCpower-up

and power-down transitions, or from system noise.

Factory Locked: SecSi Sector Programmed and

Protected At the Factory

Low V_CCWrite Inhibit

In devices with an ESN, the SecSi Sector is protected

when the device is shipped from the factory. The SecSi

Sector cannot be modified in any way. See Table 5 for

SecSi Sector addressing.

When V_CCis less than V_LKO, the device does not ac-

cept any write cycles. This protects data during V_CC

power-up and power-down. The command register

and all internal program/erase circuits are disabled,

and the device resets to the read mode. Subsequent

writes are ignored until V_CCis greater than V_LKO. The

system must provide the proper signals to the control

Customers may opt to have their code programmed by

AMD through the AMD ExpressFlash service. The de-

vices are then shipped from AMD’s factory with the

SecSi Sector permanently locked. Contact an AMD

April 26, 2002

Am29LV640MU

19

A D V A N C E I N F O R M A T I O N

pins to prevent unintentional writes when V_CCis

greater than V_LKO

CE# and WE# must be a logical zero while OE# is a

logical one.

.

Write Pulse “Glitch” Protection

Power-Up Write Inhibit

Noise pulses of less than 5 ns (typical) on OE#, CE#

or WE# do not initiate a write cycle.

If WE# = CE# = V_ILand OE# = V_IHduring power up,

the device does not accept commands on the rising

edge of WE#. The internal state machine is automati-

cally reset to the read mode on power-up.

Logical Inhibit

Write cycles are inhibited by holding any one of OE# =

V_IL, CE# = V_IHor WE# = V_IH. To initiate a write cycle,

COMMON FLASH MEMORY INTERFACE (CFI)

The Common Flash Interface (CFI) specification out-

lines device and host system software interrogation

handshake, which allows specific vendor-specified

software algorithms to be used for entire families of

devices. Software support can then be device-inde-

pendent, JEDEC ID-independent, and forward- and

backward-compatible for the specified flash device

families. Flash vendors can standardize their existing

interfaces for long-term compatibility.

given in Tables 6–9. To terminate reading CFI data,

the system must write the reset command.

The system can also write the CFI query command

when the device is in the autoselect mode. The device

enters the CFI query mode, and the system can read

CFI data at the addresses given in Tables 6–9. The

system must write the reset command to return the de-

vice to the autoselect mode.

For further information, please refer to the CFI Specifi-

cation and CFI Publication 100, available via the

World Wide Web at http://www.amd.com/prod-

ucts/nvd/overview/cfi.html. Alternatively, contact an

AMD representative for copies of these documents.

This device enters the CFI Query mode when the sys-

tem writes the CFI Query command, 98h, to address

55h, any time the device is ready to read array data.

The system can read CFI information at the addresses

Table 6. CFI Query Identification String

Addresses (x16)

Data

Description

10h

11h

12h

0051h

0052h

0059h

Query Unique ASCII string “QRY”

13h

14h

0002h

0000h

Primary OEM Command Set

15h

16h

0040h

0000h

Address for Primary Extended Table

17h

18h

0000h

Alternate OEM Command Set (00h = none exists)

19h

1Ah

0000h

Address for Alternate OEM Extended Table (00h = none exists)

20

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

Table 7. System Interface String

Description

Addresses (x16)

Data

V

_CCMin. (write/erase)

1Bh

0027h

D7–D4: volt, D3–D0: 100 millivolt

V_CCMax. (write/erase)

D7–D4: volt, D3–D0: 100 millivolt

1Ch

0036h

1Dh

1Eh

1Fh

20h

21h

22h

23h

24h

25h

26h

0000h

0007h

000Ah

0000h

0001h

0005h

0004h

0000h

V_PPMin. voltage (00h = no V_PPpin present)

V_PPMax. voltage (00h = no V_PPpin present)

Typical timeout per single word write 2^Nµs

Typical timeout for Min. size buffer write 2^Nµs (00h = not supported)

Typical timeout per individual block erase 2^Nms

Typical timeout for full chip erase 2^Nms (00h = not supported)

Max. timeout for word write 2^Ntimes typical

Max. timeout for buffer write 2^Ntimes typical

Max. timeout per individual block erase 2^Ntimes typical

Max. timeout for full chip erase 2^Ntimes typical (00h = not supported)

Table 8. Device Geometry Definition

Addresses (x16)

Data

Description

27h

0017h

Device Size = 2^Nbyte

28h

29h

0001h

0000h

Flash Device Interface description (refer to CFI publication 100)

(00h not supported)

2Ah

2Bh

0005h

0000h

Max. number of byte in multi-byte write = 2^N

(00h = not supported)

Number of Erase Block Regions within device (01h = uniform device, 02h = boot

device)

2Ch

0001h

2Dh

2Eh

2Fh

30h

007Fh

0000h

0001h

Erase Block Region 1 Information

(refer to the CFI specification or CFI publication 100)

31h

32h

33h

34h

0000h

Erase Block Region 2 Information (refer to CFI publication 100)

Erase Block Region 3 Information (refer to CFI publication 100)

Erase Block Region 4 Information (refer to CFI publication 100)

35h

36h

37h

38h

0000h

39h

3Ah

3Bh

3Ch

0000h

April 26, 2002

Am29LV640MU

21

A D V A N C E I N F O R M A T I O N

Table 9. Primary Vendor-Specific Extended Query

Addresses (x16)

Data

Description

40h

41h

42h

0050h

0052h

0049h

Query-unique ASCII string “PRI”

43h

44h

0031h

0033h

Major version number, ASCII

Minor version number, ASCII

Address Sensitive Unlock (Bits 1-0)

0 = Required, 1 = Not Required

45h

0008h

Process Technology (Bits 7-2) 0010b = 0.23 µm MirrorBit

Erase Suspend

0 = Not Supported, 1 = To Read Only, 2 = To Read & Write

46h

47h

48h

49h

4Ah

4Bh

4Ch

0002h

0004h

0001h

0004h

0000h

0001h

Sector Protect

0 = Not Supported, X = Number of sectors in per group

Sector Temporary Unprotect

00 = Not Supported, 01 = Supported

Sector Protect/Unprotect scheme

04 = 29LV800 mode

Simultaneous Operation

00 = Not Supported, X = Number of Sectors in Bank

Burst Mode Type

00 = Not Supported, 01 = Supported

Page Mode Type

00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page

ACC (Acceleration) Supply Minimum

4Dh

4Eh

00B5h

00C5h

00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV

ACC (Acceleration) Supply Maximum

00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV

Top/Bottom Boot Sector Flag

00h = Uniform Device without WP# protect, 02h = Bottom Boot Device, 03h = Top

Boot Device, 04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top

WP# protect

4Fh

50h

0000h

0001h

Program Suspend

00h = Not Supported, 01h = Supported

COMMAND DEFINITIONS

Writing specific address and data commands or se-

quences into the command register initiates device op-

erations. Table 10 defines the valid register command

sequences. Writing incorrect address and data val-

ues or writing them in the improper sequence resets

the device to reading array data.

Reading Array Data

The device is automatically set to reading array data

after device power-up. No commands are required to

retrieve data. The device is ready to read array data

after completing an Embedded Program or Embedded

Erase algorithm.

All addresses are latched on the falling edge of WE#

or CE#, whichever happens later. All data is latched on

the rising edge of WE# or CE#, whichever happens

first. Refer to the AC Characteristics section for timing

diagrams.

After the device accepts an Erase Suspend command,

the device enters the erase-suspend-read mode, after

which the system can read data from any

non-erase-suspended sector. After completing a pro-

gramming operation in the Erase Suspend mode, the

22

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

system may once again read array data with the same

exception. See the Erase Suspend/Erase Resume

Commands section for more information.

Autoselect Command Sequence

The autoselect command sequence allows the host

system to read several identifier codes at specific ad-

dresses:

The system must issue the reset command to return

the device to the read (or erase-suspend-read) mode

if DQ5 goes high during an active program or erase

operation, or if the device is in the autoselect mode.

See the next section, Reset Command, for more infor-

mation.

Identifier Code

Manufacturer ID

A7:A0

00h

Device ID, Cycle 1

01h

Device ID, Cycle 2

0Eh

Device ID, Cycle 3

0Fh

SecSi Sector Factory Protect

Sector Protect Verify

03h

See also Requirements for Reading Array Data in the

Device Bus Operations section for more information.

The Read-Only Operations table provides the read pa-

rameters, and Figure 13 shows the timing diagram.

(SA)02h

Note: The device ID is read over three cycles. SA = Sector Address

Table 10 shows the address and data requirements.

This method is an alternative to that shown in Table 3,

which is intended for PROM programmers and re-

quires V_IDon address pin A9. The autoselect com-

mand sequence may be written to an address that is

either in the read or erase-suspend-read mode. The

autoselect command may not be written while the de-

vice is actively programming or erasing.

Reset Command

Writing the reset command resets the device to the

read or erase-suspend-read mode. Address bits are

don’t cares for this command.

The reset command may be written between the se-

quence cycles in an erase command sequence before

erasing begins. This resets the device to the read

mode. Once erasure begins, however, the device ig-

nores reset commands until the operation is complete.

The autoselect command sequence is initiated by first

writing two unlock cycles. This is followed by a third

write cycle that contains the autoselect command. The

device then enters the autoselect mode. The system

may read at any address any number of times without

initiating another autoselect command sequence.

The reset command may be written between the

sequence cycles in a program command sequence

before programming begins. This resets the device to

the read mode. If the program command sequence is

written while the device is in the Erase Suspend mode,

writing the reset command returns the device to the

erase-suspend-read mode. Once programming be-

gins, however, the device ignores reset commands

until the operation is complete.

The system must write the reset command to return to

the read mode (or erase-suspend-read mode if the de-

vice was previously in Erase Suspend).

Enter SecSi Sector/Exit SecSi Sector

Command Sequence

The reset command may be written between the se-

quence cycles in an autoselect command sequence.

Once in the autoselect mode, the reset command

must be written to return to the read mode. If the de-

vice entered the autoselect mode while in the Erase

Suspend mode, writing the reset command returns the

device to the erase-suspend-read mode.

The SecSi Sector region provides a secured data area

containing an 8-word random Electronic Serial Num-

ber (ESN). The system can access the SecSi Sector

region by issuing the three-cycle Enter SecSi Sector

command sequence. The device continues to access

the SecSi Sector region until the system issues the

four-cycle Exit SecSi Sector command sequence. The

Exit SecSi Sector command sequence returns the de-

vice to normal operation. Table 10 shows the address

and data requirements for both command sequences.

See also “SecSi (Secured Silicon) Sector Flash

Memory Region” for further information.

If DQ5 goes high during a program or erase operation,

writing the reset command returns the device to the

read mode (or erase-suspend-read mode if the device

was in Erase Suspend).

Note that if DQ1 goes high during a Write Buffer Pro-

gramming operation, the system must write the

Write-to-Buffer-Abort Reset command sequence to

reset the device for the next operation.

Word Program Command Sequence

Programming is a four-bus-cycle operation. The pro-

gram command sequence is initiated by writing two

unlock write cycles, followed by the program set-up

command. The program address and data are written

next, which in turn initiate the Embedded Program al-

gorithm. The system is not required to provide further

controls or timings. The device automatically provides

internally generated program pulses and verifies the

April 26, 2002

Am29LV640MU

23

A D V A N C E I N F O R M A T I O N

programmed cell margin. Table 10 shows the address

Buffer Programming command sequence is initiated

by first writing two unlock cycles. This is followed by a

third write cycle containing the Write Buffer Load com-

mand written at the Sector Address in which program-

ming will occur. The fourth cycle writes the sector

address and the number of word locations, minus one,

to be programmed. For example, if the system will pro-

gram 6 unique address locations, then 05h should be

written to the device. This tells the device how many

write buffer addresses will be loaded with data and

therefore when to expect the Program Buffer to Flash

command. The number of locations to program cannot

exceed the size of the write buffer or the operation will

abort.

and data requirements for the word program com-

mand sequence.

When the Embedded Program algorithm is complete,

the device then returns to the read mode and ad-

dresses are no longer latched. The system can deter-

mine the status of the program operation by using

DQ7, DQ6, or RY/BY#. Refer to the Write Operation

Status section for information on these status bits.

Any commands written to the device during the Em-

bedded Program Algorithm are ignored. Note that a

hardware reset immediately terminates the program

operation. The program command sequence should

be reinitiated once the device has returned to the read

mode, to ensure data integrity.

The fifth cycle writes the first address location and

data to be programmed. A write-buffer-page is se-

lected by address bits A_MAX–A₄. All subsequent ad-

dress/data pairs must fall within the

selected-write-buffer-page. The system then writes the

remaining address/data pairs into the write buffer.

Write buffer locations may be loaded in any order.

Programming is allowed in any sequence and across

sector boundaries. A bit cannot be programmed

from “0” back to a “1.” Attempting to do so may

cause the device to set DQ5 = 1, or cause the DQ7

and DQ6 status bits to indicate the operation was suc-

cessful. However, a succeeding read will show that the

data is still “0.” Only erase operations can convert a

“0” to a “1.”

The write-buffer-page address must be the same for

all address/data pairs loaded into the write buffer.

(This means Write Buffer Programming cannot be per-

formed across multiple write-buffer pages. This also

means that Write Buffer Programming cannot be per-

formed across multiple sectors. If the system attempts

to load programming data outside of the selected

write-buffer page, the operation will abort.

Unlock Bypass Command Sequence

The unlock bypass feature allows the system to pro-

gram words to the device faster than using the stan-

dard program command sequence. The unlock

bypass command sequence is initiated by first writing

two unlock cycles. This is followed by a third write

cycle containing the unlock bypass command, 20h.

The device then enters the unlock bypass mode. A

two-cycle unlock bypass program command sequence

is all that is required to program in this mode. The first

cycle in this sequence contains the unlock bypass pro-

gram command, A0h; the second cycle contains the

program address and data. Additional data is pro-

grammed in the same manner. This mode dispenses

with the initial two unlock cycles required in the stan-

dard program command sequence, resulting in faster

total programming time. Table 10 shows the require-

ments for the command sequence.

Note that if a Write Buffer address location is loaded

multiple times, the address/data pair counter will be

decremented for every data load operation. The host

system must therefore account for loading a

write-buffer location more than once. The counter

decrements for each data load operation, not for each

unique write-buffer-address location. Additionally, the

last data loaded prior to the Program Buffer to Flash

command will be programmed into the device. Note

also that if an address location is loaded more than

once into the buffer, the final data loaded for that ad-

dress will be programmed.

Once the specified number of write buffer locations

have been loaded, the system must then write the Pro-

gram Buffer to Flash command at the sector address.

Any other address and data combination aborts the

Write Buffer Programming operation. The device then

begins programming. Data polling should be used

while monitoring the last address location loaded into

the write buffer. DQ7, DQ6, DQ5, and DQ1 should be

monitored to determine the device status during Write

Buffer Programming.

During the unlock bypass mode, only the Unlock By-

pass Program and Unlock Bypass Reset commands

are valid. To exit the unlock bypass mode, the system

must issue the two-cycle unlock bypass reset com-

mand sequence. The first cycle must contain the data

90h. The second cycle must contain the data 00h. The

device then returns to the read mode.

Write Buffer Programming

Write Buffer Programming allows the system write to a

maximum of 16 words in one programming operation.

This results in faster effective programming time than

the standard programming algorithms. The Write

The write-buffer programming operation can be sus-

pended using the standard program suspend/resume

commands. Upon successful completion of the Write

24

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

Buffer Programming operation, the device is ready to

execute the next command.

vice for the next operation. Note that the full 3-cycle

Write-to-Buffer-Abort Reset command sequence is re-

quired when using Write-Buffer-Programming features

in Unlock Bypass mode.

The Write Buffer Programming Sequence can be

aborted in the following ways:

Accelerated Program

■ Load a value that is greater than the page buffer

size during the Number of Locations to Program

step.

The device offers accelerated program operations

through the ACC pin. When the system asserts V_HHon

the ACC pin, the device automatically enters the Un-

lock Bypass mode. The system may then write the

two-cycle Unlock Bypass program command se-

quence. The device uses the higher voltage on the

ACC pin to accelerate the operation. Note that the

ACC pin must not be at V_HHfor operations other than

accelerated programming, or device damage may re-

sult.

■ Write to an address in a sector different than the

one specified during the Write-Buffer-Load com-

mand.

■ Write an Address/Data pair to

a

different

write-buffer-page than the one selected by the

Starting Address during the write buffer data load-

ing stage of the operation.

■ Write data other than the Confirm Command after

Figure 4 illustrates the algorithm for the program oper-

ation. Refer to the Erase and Program Operations

table in the AC Characteristics section for parameters,

and Figure 16 for timing diagrams.

the specified number of data load cycles.

The abort condition is indicated by DQ1 = 1, DQ7 =

DATA# (for the last address location loaded), DQ6 =

toggle, and DQ5=0. A Write-to-Buffer-Abort Reset

command sequence must be written to reset the de-

April 26, 2002

Am29LV640MU

25

A D V A N C E I N F O R M A T I O N

Write “Write to Buffer”

command and

Sector Address

Part of “Write to Buffer”

Command Sequence

Write number of addresses

to program minus 1(WC)

and Sector Address

Write first address/data

Yes

WC = 0 ?

No

Write to a different

sector address

Abort Write to

Yes

Buffer Operation?

Write to buffer ABORTED.

Must write “Write-to-buffer

Abort Reset” command

sequence to return

No

(Note 1)

Write next address/data pair

to read mode.

WC = WC - 1

Write program buffer to

flash sector address

Notes:

1. When Sector Address is specified, any address in

the selected sector is acceptable. However, when

loading Write-Buffer address locations with data, all

addresses must fall within the selected Write-Buffer

Page.

Read DQ7 - DQ0 at

Last Loaded Address

2. DQ7 may change simultaneously with DQ5.

Therefore, DQ7 should be verified.

3. If this flowchart location was reached because

DQ5= “1”, then the device FAILED. If this

flowchart location was reached because DQ1=

“1”, then the Write to Buffer operation was

ABORTED. In either case, the proper reset

command must be written before the device can

begin another operation. If DQ1=1, write the

Write-Buffer-Programming-Abort-Reset

Yes

DQ7 = Data?

No

command. if DQ5=1, write the Reset command.

No

DQ1 = 1?

Yes

DQ5 = 1?

Yes

4. See Table 10 for command sequences required for

write buffer programming.

Read DQ7 - DQ0 with

address = Last Loaded

Address

Yes

(Note 2)

DQ7 = Data?

No

(Note 3)

FAIL or ABORT

PASS

Figure 3. Write Buffer Programming Operation

Am29LV640MU

26

April 26, 2002

A D V A N C E I N F O R M A T I O N

Program Suspend/Program Resume

Command Sequence

The Program Suspend command allows the system to

interrupt a programming operation or a Write to Buffer

programming operation so that data can be read from

any non-suspended sector. When the Program Sus-

pend command is written during a programming pro-

cess, the device halts the program operation within 1

ms and updates the status bits. Addresses are not re-

quired when writing the Program Suspend command.

START

Write Program

Command Sequence

Data Poll

from System

After the programming operation has been sus-

pended, the system can read array data from any

non-suspended sector. The Program Suspend com-

mand may also be issued during a programming oper-

ation while an erase is suspended. In this case, data

may be read from any addresses not in Erase Sus-

pend or Program Suspend. If a read is needed from

the SecSi Sector area (One-time Program area), then

user must use the proper command sequences to

enter and exit this region.

Embedded

Program

algorithm

in progress

Verify Data?

Yes

No

Increment Address

Last Address?

Yes

The system may also write the autoselect command

sequence when the device is in the Program Suspend

mode. The system can read as many autoselect

codes as required. When the device exits the autose-

lect mode, the device reverts to the Program Suspend

mode, and is ready for another valid operation. See

Autoselect Command Sequence for more information.

Programming

Completed

Note: See Table 10 for program command sequence.

After the Program Resume command is written, the

device reverts to programming. The system can de-

termine the status of the program operation using the

DQ7 or DQ6 status bits, just as in the standard pro-

gram operation. See Write Operation Status for more

information.

Figure 4. Program Operation

The system must write the Program Resume com-

mand (address bits are don’t care) to exit the Program

Suspend mode and continue the programming opera-

tion. Further writes of the Resume command are ig-

nored. Another Program Suspend command can be

written after the device has resume programming.

April 26, 2002

Am29LV640MU

27

A D V A N C E I N F O R M A T I O N

When the Embedded Erase algorithm is complete, the

device returns to the read mode and addresses are no

longer latched. The system can determine the status

of the erase operation by using DQ7, DQ6, DQ2, or

RY/BY#. Refer to the Write Operation Status section

for information on these status bits.

Program Operation

or Write-to-Buffer

Sequence in Progress

Write Program Suspend

Command Sequence

Write address/data

XXXh/B0h

Any commands written during the chip erase operation

are ignored. However, note that a hardware reset im-

mediately terminates the erase operation. If that oc-

curs, the chip erase command sequence should be

reinitiated once the device has returned to reading

array data, to ensure data integrity.

Command is also valid for

Erase-suspended-program

operations

Wait 1 ms

Autoselect and SecSi Sector

Read data as

required

read operations are also allowed

Figure 6 illustrates the algorithm for the erase opera-

tion. Refer to the Erase and Program Operations ta-

bles in the AC Characteristics section for parameters,

and Figure 18 section for timing diagrams.

Data cannot be read from erase- or

program-suspended sectors

Done

No

reading?

Sector Erase Command Sequence

Sector erase is a six bus cycle operation. The sector

erase command sequence is initiated by writing two

unlock cycles, followed by a set-up command. Two ad-

ditional unlock cycles are written, and are then fol-

lowed by the address of the sector to be erased, and

the sector erase command. Table 10 shows the ad-

dress and data requirements for the sector erase com-

mand sequence.

Yes

Write Program Resume

Command Sequence

Write address/data

XXXh/30h

Device reverts to

operation prior to

Program Suspend

The device does not require the system to preprogram

prior to erase. The Embedded Erase algorithm auto-

matically programs and verifies the entire memory for

an all zero data pattern prior to electrical erase. The

system is not required to provide any controls or tim-

ings during these operations.

Figure 5. Program Suspend/Program Resume

Chip Erase Command Sequence

Chip erase is a six bus cycle operation. The chip erase

command sequence is initiated by writing two unlock

cycles, followed by a set-up command. Two additional

unlock write cycles are then followed by the chip erase

command, which in turn invokes the Embedded Erase

algorithm. The device does not require the system to

preprogram prior to erase. The Embedded Erase algo-

rithm automatically preprograms and verifies the entire

memory for an all zero data pattern prior to electrical

erase. The system is not required to provide any con-

trols or timings during these operations. Table 10

shows the address and data requirements for the chip

erase command sequence.

After the command sequence is written, a sector erase

time-out of 50 µs occurs. During the time-out period,

additional sector addresses and sector erase com-

mands may be written. Loading the sector erase buffer

may be done in any sequence, and the number of sec-

tors may be from one sector to all sectors. The time

between these additional cycles must be less than 50

µs, otherwise erasure may begin. Any sector erase

address and command following the exceeded

time-out may or may not be accepted. It is recom-

mended that processor interrupts be disabled during

this time to ensure all commands are accepted. The

interrupts can be re-enabled after the last Sector

Erase command is written. Any command other than

Sector Erase or Erase Suspend during the

time-out period resets the device to the read

mode. The system must rewrite the command se-

quence and any additional addresses and commands.

The system can monitor DQ3 to determine if the sec-

tor erase timer has timed out (See the section on DQ3:

Sector Erase Timer.). The time-out begins from the ris-

ing edge of the final WE# pulse in the command

sequence.

28

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

When the Embedded Erase algorithm is complete, the

imum of 20 µs to suspend the erase operation. How-

ever, when the Erase Suspend command is written

during the sector erase time-out, the device immedi-

ately terminates the time-out period and suspends the

erase operation.

device returns to reading array data and addresses

are no longer latched. Note that while the Embedded

Erase operation is in progress, the system can read

data from the non-erasing sector. The system can de-

termine the status of the erase operation by reading

DQ7, DQ6, DQ2, or RY/BY# in the erasing sector.

Refer to the Write Operation Status section for infor-

mation on these status bits.

After the erase operation has been suspended, the

device enters the erase-suspend-read mode. The sys-

tem can read data from or program data to any sector

not selected for erasure. (The device “erase sus-

pends” all sectors selected for erasure.) Reading at

any address within erase-suspended sectors pro-

duces status information on DQ7–DQ0. The system

can use DQ7, or DQ6 and DQ2 together, to determine

if a sector is actively erasing or is erase-suspended.

Refer to the Write Operation Status section for infor-

mation on these status bits.

Once the sector erase operation has begun, only the

Erase Suspend command is valid. All other com-

mands are ignored. However, note that a hardware

reset immediately terminates the erase operation. If

that occurs, the sector erase command sequence

should be reinitiated once the device has returned to

reading array data, to ensure data integrity.

Figure 6 illustrates the algorithm for the erase opera-

tion. Refer to the Erase and Program Operations ta-

bles in the AC Characteristics section for parameters,

and Figure 18 section for timing diagrams.

After an erase-suspended program operation is com-

plete, the device returns to the erase-suspend-read

mode. The system can determine the status of the

program operation using the DQ7 or DQ6 status bits,

just as in the standard word program operation.

Refer to the Write Operation Status section for more

information.

Erase Suspend/Erase Resume

Commands

The Erase Suspend command, B0h, allows the sys-

tem to interrupt a sector erase operation and then read

data from, or program data to, any sector not selected

for erasure. This command is valid only during the

sector erase operation, including the 50 µs time-out

period during the sector erase command sequence.

The Erase Suspend command is ignored if written dur-

ing the chip erase operation or Embedded Program

algorithm.

In the erase-suspend-read mode, the system can also

issue the autoselect command sequence. Refer to the

Autoselect Mode and Autoselect Command Sequence

sections for details.

To resume the sector erase operation, the system

must write the Erase Resume command. The address

of the erase-suspended sector is required when writ-

ing this command. Further writes of the Resume com-

mand are ignored. Another Erase Suspend command

can be written after the chip has resumed erasing.

When the Erase Suspend command is written during

the sector erase operation, the device requires a max-

April 26, 2002

Am29LV640MU

29

A D V A N C E I N F O R M A T I O N

START

Write Erase

Command Sequence

(Notes 1, 2)

Data Poll to Erasing

Bank from System

Embedded

Erase

algorithm

in progress

No

Data = FFh?

Yes

Erasure Completed

Notes:

1. See Table 10 for erase command sequence.

2. See the section on DQ3 for information on the sector

erase timer.

Figure 6. Erase Operation

30

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

Command Definitions

Table 10. Command Definitions

Bus Cycles (Notes 1–4)

Command Sequence (Notes)

Read (Note 6)

Addr Data

Addr

Data

Addr

Data

Addr

Data

Addr Data Addr Data

1

4

6

RA

XXX

555

RD

F0

Reset (Note 7)

Manufacturer ID

AA

2AA

55

555

90

X00

X01

0001

227E

Device ID (Note 9)

X0E

2213 X0F 2201

SecSi Sector Factory Protect

(Note 10)

4

555

AA

2AA

55

555

90

X03

(Note 10)

00/01

Sector Group Protect Verify

(Note 11)

(SA)X02

Enter SecSi Sector Region

Exit SecSi Sector Region

Program

3

4

6

1

3

2

6

1

555

SA

AA

29

2AA

55

555

SA

88

90

A0

25

XXX

PA

00

PD

WC

Write to Buffer (Note 12)

Program Buffer to Flash

Write to Buffer Abort Reset (Note 13)

Unlock Bypass

SA

PA

PD

WBL

PD

555

XXX

555

BA

AA

A0

90

2AA

PA

55

PD

00

55

555

F0

20

Unlock Bypass Program (Note 14)

Unlock Bypass Reset (Note 15)

Chip Erase

XXX

2AA

AA

B0

30

555

80

555

AA

2AA

55

555

SA

10

30

Sector Erase

Program/Erase Suspend (Note 16)

Program/Erase Resume (Note 17)

CFI Query (Note 18)

BA

55

98

Legend:

X = Don’t care

SA = Sector Address of sector to be verified (in autoselect mode) or

erased. Address bits A21–A15 uniquely select any sector.

RA = Read Address of the memory location to be read.

WBL = Write Buffer Location. Address must be within the same write

buffer page as PA.

RD = Read Data read from location RA during read operation.

PA = Program Address . Addresses latch on the falling edge of the

WE# or CE# pulse, whichever happens later.

WC = Word Count. Number of write buffer locations to load minus 1.

PD = Program Data for location PA. Data latches on the rising edge of

WE# or CE# pulse, whichever happens first.

Notes:

1. See Table 1 for description of bus operations.

10. The data is 88h for factory locked and 08h for not factory locked.

2. All values are in hexadecimal.

11. The data is 00h for an unprotected sector group and 01h for a

protected sector group.

3. Shaded cells indicate read cycles. All others are write cycles.

12. The total number of cycles in the command sequence is

determined by the number of words written to the write buffer. The

maximum number of cycles in the command sequence is 21.

4. During unlock and command cycles, when lower address bits are

555 or 2AA as shown in table, address bits higher than A11 and

data bits higher than DQ7 are don’t care.

13. Command sequence resets device for next command after

aborted write-to-buffer operation.

5. Unless otherwise noted, address bits A21–A11 are don’t cares.

6. No unlock or command cycles required when device is in read

mode.

14. The Unlock Bypass command is required prior to the Unlock

Bypass Program command.

7. The Reset command is required to return to the read mode (or to

the erase-suspend-read mode if previously in Erase Suspend)

when the device is in the autoselect mode, or if DQ5 goes high

(while the device is providing status information).

15. The Unlock Bypass Reset command is required to return to the

read mode when the device is in the unlock bypass mode.

16. The system may read and program in non-erasing sectors, or

enter the autoselect mode, when in the Erase Suspend mode.

The Erase Suspend command is valid only during a sector erase

operation.

8. The fourth cycle of the autoselect command sequence is a read

cycle. Data bits DQ15–DQ8 are don’t care. See the Autoselect

Command Sequence section for more information.

17. The Erase Resume command is valid only during the Erase

Suspend mode.

9. The device ID must be read in three cycles.

18. Command is valid when device is ready to read array data or when

device is in autoselect mode.

April 26, 2002

Am29LV640MU

31

A D V A N C E I N F O R M A T I O N

WRITE OPERATION STATUS

The device provides several bits to determine the status of

a program or erase operation: DQ2, DQ3, DQ5, DQ6, and

DQ7. Table 11 and the following subsections describe the

function of these bits. DQ7 and DQ6 each offer a method

for determining whether a program or erase operation is

complete or in progress. The device also provides a hard-

ware-based output signal, RY/BY#, to determine whether

an Embedded Program or Erase operation is in progress or

has been completed.

valid data, the data outputs on DQ0–DQ6 may be still

invalid. Valid data on DQ0–DQ7 will appear on suc-

cessive read cycles.

Table 11 shows the outputs for Data# Polling on DQ7.

Figure 7 shows the Data# Polling algorithm. Figure 19

in the AC Characteristics section shows the Data#

Polling timing diagram.

DQ7: Data# Polling

START

The Data# Polling bit, DQ7, indicates to the host system

whether an Embedded Program or Erase algorithm is in

progress or completed, or whether the device is in Erase

Suspend. Data# Polling is valid after the rising edge of the

final WE# pulse in the command sequence.

Read DQ7–DQ0

Addr = VA

During the Embedded Program algorithm, the device out-

puts on DQ7 the complement of the datum programmed to

DQ7. This DQ7 status also applies to programming during

Erase Suspend. When the Embedded Program algorithm is

complete, the device outputs the datum programmed to

DQ7. The system must provide the program address to

read valid status information on DQ7. If a program address

falls within a protected sector, Data# Polling on DQ7 is ac-

tive for approximately 1 µs, then the device returns to the

read mode.

Yes

DQ7 = Data?

No

DQ5 = 1?

During the Embedded Erase algorithm, Data# Polling

produces a “0” on DQ7. When the Embedded Erase

algorithm is complete, or if the device enters the Erase

Suspend mode, Data# Polling produces a “1” on DQ7.

The system must provide an address within any of the

sectors selected for erasure to read valid status infor-

mation on DQ7.

Yes

Read DQ7–DQ0

Addr = VA

After an erase command sequence is written, if all

sectors selected for erasing are protected, Data# Poll-

ing on DQ7 is active for approximately 100 µs, then

the device returns to the read mode. If not all selected

sectors are protected, the Embedded Erase algorithm

erases the unprotected sectors, and ignores the se-

lected sectors that are protected. However, if the sys-

tem reads DQ7 at an address within a protected

sector, the status may not be valid.

Yes

DQ7 = Data?

No

PASS

FAIL

Notes:

1. VA = Valid address for programming. During a sector

erase operation, a valid address is any sector address

within the sector being erased. During chip erase, a

valid address is any non-protected sector address.

Just prior to the completion of an Embedded Program

or Erase operation, DQ7 may change asynchronously

with DQ0–DQ6 while Output Enable (OE#) is asserted

low. That is, the device may change from providing

status information to valid data on DQ7. Depending on

when the system samples the DQ7 output, it may read

the status or valid data. Even if the device has com-

pleted the program or erase operation and DQ7 has

2. DQ7 should be rechecked even if DQ5 = “1” because

DQ7 may change simultaneously with DQ5.

Figure 7. Data# Polling Algorithm

32

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

After an erase command sequence is written, if all sectors

RY/BY#: Ready/Busy#

selected for erasing are protected, DQ6 toggles for approxi-

mately 100 µs, then returns to reading array data. If not all

selected sectors are protected, the Embedded Erase algo-

rithm erases the unprotected sectors, and ignores the se-

lected sectors that are protected.

The RY/BY# is a dedicated, open-drain output pin

which indicates whether an Embedded Algorithm is in

progress or complete. The RY/BY# status is valid after

the rising edge of the final WE# pulse in the command

sequence. Since RY/BY# is an open-drain output, sev-

eral RY/BY# pins can be tied together in parallel with a

The system can use DQ6 and DQ2 together to determine

whether a sector is actively erasing or is erase-suspended.

When the device is actively erasing (that is, the Embedded

Erase algorithm is in progress), DQ6 toggles. When the de-

vice enters the Erase Suspend mode, DQ6 stops toggling.

However, the system must also use DQ2 to determine

which sectors are erasing or erase-suspended. Alterna-

tively, the system can use DQ7 (see the subsection on

DQ7: Data# Polling).

pull-up resistor to V_CC

.

If the output is low (Busy), the device is actively eras-

ing or programming. (This includes programming in

the Erase Suspend mode.) If the output is high

(Ready), the device is in the read mode, the standby

mode, or the device is in the erase-suspend-read

mode.

Table 11 shows the outputs for RY/BY#.

If a program address falls within a protected sector,

DQ6 toggles for approximately 1 µs after the program

command sequence is written, then returns to reading

array data.

DQ6: Toggle Bit I

Toggle Bit I on DQ6 indicates whether an Embedded

Program or Erase algorithm is in progress or com-

plete, or whether the device has entered the Erase

Suspend mode. Toggle Bit I may be read at any ad-

dress, and is valid after the rising edge of the final

WE# pulse in the command sequence (prior to the

program or erase operation), and during the sector

erase time-out.

DQ6 also toggles during the erase-suspend-program

mode, and stops toggling once the Embedded Pro-

gram algorithm is complete.

Table 11 shows the outputs for Toggle Bit I on DQ6.

Figure 8 shows the toggle bit algorithm. Figure 20 in

the “AC Characteristics” section shows the toggle bit

timing diagrams. Figure 21 shows the differences be-

tween DQ2 and DQ6 in graphical form. See also the

subsection on DQ2: Toggle Bit II.

During an Embedded Program or Erase algorithm op-

eration, successive read cycles to any address cause

DQ6 to toggle. The system may use either OE# or

CE# to control the read cycles. When the operation is

complete, DQ6 stops toggling.

April 26, 2002

Am29LV640MU

33

A D V A N C E I N F O R M A T I O N

DQ2: Toggle Bit II

The “Toggle Bit II” on DQ2, when used with DQ6, indi-

cates whether a particular sector is actively erasing

(that is, the Embedded Erase algorithm is in progress),

or whether that sector is erase-suspended. Toggle Bit

II is valid after the rising edge of the final WE# pulse in

the command sequence.

START

Read DQ7–DQ0

DQ2 toggles when the system reads at addresses

within those sectors that have been selected for era-

sure. (The system may use either OE# or CE# to con-

trol the read cycles.) But DQ2 cannot distinguish

whether the sector is actively erasing or is erase-sus-

pended. DQ6, by comparison, indicates whether the

device is actively erasing, or is in Erase Suspend, but

cannot distinguish which sectors are selected for era-

sure. Thus, both status bits are required for sector and

mode information. Refer to Table 11 to compare out-

puts for DQ2 and DQ6.

Read DQ7–DQ0

No

Toggle Bit

= Toggle?

Yes

Figure 8 shows the toggle bit algorithm in flowchart

form, and the section “DQ2: Toggle Bit II” explains the

algorithm. See also the DQ6: Toggle Bit I subsection.

Figure 20 shows the toggle bit timing diagram. Figure

21 shows the differences between DQ2 and DQ6 in

graphical form.

No

DQ5 = 1?

Yes

Read DQ7–DQ0

Reading Toggle Bits DQ6/DQ2

Twice

Refer to Figure 8 for the following discussion. When-

ever the system initially begins reading toggle bit sta-

tus, it must read DQ7–DQ0 at least twice in a row to

determine whether a toggle bit is toggling. Typically,

the system would note and store the value of the tog-

gle bit after the first read. After the second read, the

system would compare the new value of the toggle bit

with the first. If the toggle bit is not toggling, the device

has completed the program or erase operation. The

system can read array data on DQ7–DQ0 on the fol-

lowing read cycle.

Toggle Bit

= Toggle?

No

Yes

Program/Erase

Operation Not

Complete, Write

Reset Command

Program/Erase

Operation Complete

However, if after the initial two read cycles, the system

determines that the toggle bit is still toggling, the sys-

tem also should note whether the value of DQ5 is high

(see the section on DQ5). If it is, the system should

then determine again whether the toggle bit is tog-

gling, since the toggle bit may have stopped toggling

just as DQ5 went high. If the toggle bit is no longer

toggling, the device has successfully completed the

program or erase operation. If it is still toggling, the de-

vice did not completed the operation successfully, and

the system must write the reset command to return to

reading array data.

Note: The system should recheck the toggle bit even if

DQ5 = “1” because the toggle bit may stop toggling as DQ5

changes to “1.” See the subsections on DQ6 and DQ2 for

more information.

Figure 8. Toggle Bit Algorithm

The remaining scenario is that the system initially de-

termines that the toggle bit is toggling and DQ5 has

not gone high. The system may continue to monitor

the toggle bit and DQ5 through successive read cy-

cles, determining the status as described in the previ-

ous paragraph. Alternatively, it may choose to perform

34

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

other system tasks. In this case, the system must start

at the beginning of the algorithm when it returns to de-

termine the status of the operation (top of Figure 8).

mand. When the time-out period is complete, DQ3

switches from a “0” to a “1.” If the time between addi-

tional sector erase commands from the system can be

assumed to be less than 50 µs, the system need not

monitor DQ3. See also the Sector Erase Command

Sequence section.

DQ5: Exceeded Timing Limits

DQ5 indicates whether the program, erase, or

write-to-buffer time has exceeded a specified internal

pulse count limit. Under these conditions DQ5 produces a

“1,” indicating that the program or erase cycle was not suc-

cessfully completed.

After the sector erase command is written, the system

should read the status of DQ7 (Data# Polling) or DQ6

(Toggle Bit I) to ensure that the device has accepted

the command sequence, and then read DQ3. If DQ3 is

“1,” the Embedded Erase algorithm has begun; all fur-

ther commands (except Erase Suspend) are ignored

until the erase operation is complete. If DQ3 is “0,” the

device will accept additional sector erase commands.

To ensure the command has been accepted, the sys-

tem software should check the status of DQ3 prior to

and following each subsequent sector erase com-

mand. If DQ3 is high on the second status check, the

last command might not have been accepted.

The device may output a “1” on DQ5 if the system tries

to program a “1” to a location that was previously pro-

grammed to “0.” Only an erase operation can

change a “0” back to a “1.” Under this condition, the

device halts the operation, and when the timing limit

has been exceeded, DQ5 produces a “1.”

In all these cases, the system must write the reset

command to return the device to the reading the array

(or to erase-suspend-read if the device was previously

in the erase-suspend-program mode).

Table 11 shows the status of DQ3 relative to the other

status bits.

DQ3: Sector Erase Timer

DQ1: Write-to-Buffer Abort

After writing a sector erase command sequence, the

system may read DQ3 to determine whether or not

erasure has begun. (The sector erase timer does not

apply to the chip erase command.) If additional

sectors are selected for erasure, the entire time-out

also applies after each additional sector erase com-

DQ1 indicates whether a Write-to-Buffer operation

was aborted. Under these conditions DQ1 produces a

“1”.

The

system

must

issue

the

Write-to-Buffer-Abort-Reset command sequence to re-

turn the device to reading array data. See Write Buffer

Table 11. Write Operation Status

DQ7

DQ5

DQ2

Status

(Note 2)

DQ6

(Note 1)

DQ3

N/A

1

(Note 2)

DQ1 RY/BY#

Embedded Program Algorithm

Embedded Erase Algorithm

Program-Suspended

DQ7#

0

Toggle

0

No toggle

Toggle

0

Standard

Mode

N/A

Invalid (not allowed)

Data

1

0

Program

Suspend

Mode

Program-

Sector

Suspend

Non-Program

Read

Suspended Sector

Erase-Suspended

1

No toggle

Toggle

0

N/A

Toggle

N/A

Erase-

Sector

Suspend

Erase

Suspend

Mode

Non-EraseSuspended

Read

Data

Sector

Erase-Suspend-Program

(Embedded Program)

DQ7#

0

N/A

Busy (Note 3)

Abort (Note 4)

DQ7#

Toggle

0

N/A

0

1

0

Write-to-

Buffer

Notes:

1. DQ5 switches to ‘1’ when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the

maximum timing limits. Refer to the section on DQ5 for more information.

2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.

3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.

4. DQ1 switches to ‘1’ when tthe device has aborted the write-to-buffer operation.

April 26, 2002

Am29LV640MU

35

A D V A N C E I N F O R M A T I O N

ABSOLUTE MAXIMUM RATINGS

Storage Temperature

Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C

20 ns

+0.8 V

Ambient Temperature

with Power Applied . . . . . . . . . . . . . –55°C to +125°C

–0.5 V

–2.0 V

Voltage with Respect to Ground

V_CC(Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V

V_IO. . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V

20 ns

A9, OE#, ACC, and RESET#

Figure 9. Maximum Negative

Overshoot Waveform

(Note 2). . . . . . . . . . . . . . . . . . . .–0.5 V to +12.5 V

All other pins (Note 1). . . . . . –0.5 V to V_CC+0.5 V

Output Short Circuit Current (Note 3) . . . . . . 200 mA

Notes:

1. Minimum DC voltage on input or I/O pins is –0.5 V.

During voltage transitions, input or I/O pins may

overshoot V_SSto –2.0 V for periods of up to 20 ns.

Maximum DC voltage on input or I/O pins is V_CC+0.5 V.

See Figure 9. During voltage transitions, input or I/O pins

may overshoot to V_CC+2.0 V for periods up to 20 ns. See

Figure 10.

20 ns

V_CC

+2.0 V

V_CC

+0.5 V

2. Minimum DC input voltage on pins A9, OE#, ACC, and

RESET# is –0.5 V. During voltage transitions, A9, OE#,

ACC, and RESET# may overshoot V_SSto –2.0 V for

periods of up to 20 ns. See Figure 9. Maximum DC input

voltage on pin A9, OE#, ACC, and RESET# is +12.5 V

which may overshoot to +14.0 V for periods up to 20 ns.

2.0 V

20 ns

Figure 10. Maximum Positive

Overshoot Waveform

3. No more than one output may be shorted to ground at a

time. Duration of the short circuit should not be greater

than one second.

Stresses above those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device. This

is a stress rating only; functional operation of the device at

these or any other conditions above those indicated in the

operational sections of this data sheet is not implied.

Exposure of the device to absolute maximum rating

conditions for extended periods may affect device reliability.

OPERATING RANGES

Industrial (I) Devices

Ambient Temperature (T_A) . . . . . . . . . –40°C to +85°C

Supply Voltages

V_CC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7–3.6 V

V_IO(Note 2) . . . . . . . . . . . . . . . . . . . . . . . . 1.65–3.0 V

Notes:

1. Operating ranges define those limits between which the

functionality of the device is guaranteed.

2. See Ordering Information section for valid V_CC/V_IOrange

combinations. The I/Os cannot go to 3 V when V_IO= 1.8

V.

36

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

DC CHARACTERISTICS

CMOS Compatible

Parameter

Symbol

Parameter Description

Input Load Current (Note 1)

Test Conditions

V_IN= V_SSto V_CC

V_CC= V_{CC max}

V_CC= V_{CC max}; A9 = 12.5 V

Min

Typ

Max

±1.0

35

Unit

µA

,

I_LI

I_LIT

I_LO

A9, ACC Input Load Current

Output Leakage Current

µA

V_OUT= V_SSto V_CC

V_CC= V_{CC max}

,

±1.0

µA

5 MHz

1 MHz

15

30

10

50

20

50

20

60

V_CCActive Read Current

(Notes 1, 2)

I_CC1

CE# = V_IL,OE# = V_IH

mA

I_CC2

I_CC3

I_CC4

V_CCInitial Page Read Current (1, 2) CE# = V_IL,OE# = V_IH

V_CCIntra-Page Read Current (1, 2) CE# = V_IL,OE# = V_IH

V_CCActive Write Current (Notes 2, 3) CE# = V_IL,OE# = V_IH

mA

CE#, RESET# = V_CC± 0.3 V,

WP# = V_IH

I_CC5

I_CC6

I_CC7

V_CCStandby Current (Note 2)

V_CCReset Current (Note 2)

1

5

µA

RESET# = V_SS± 0.3 V, WP# = V_IH

V_IH= V_CC± 0.3 V;

V_IL= V_SS± 0.3 V, WP# = V_IH

Automatic Sleep Mode (Notes 2, 4)

ACC pin

10

30

20

60

mA

V

ACC Accelerated Program Current

(Note 2)

I_ACC

CE# = V_IL, OE# = V_IH

V

_CCpin

V_IL1

V_IH1

V_IL2

V_IH2

Input Low Voltage 1(Notes 5, 6)

Input High Voltage 1 (Notes 5, 6)

Input Low Voltage 2 (Notes 5, 7)

Input High Voltage 2 (Notes 5, 7)

–0.5

0.7 x V_CC

–0.5

0.8

V_CC+ 0.5

0.3 x V_IO

V_IO+ 0.5

V

0.7 x V_IO

V

Voltage for ACC Program

Acceleration

V_HH

V_ID

V_CC= 2.7 –3.6 V

_CC= 2.7 –3.6 V

11.5

12.5

V

Voltage for Autoselect and

Temporary Sector Unprotect

V

12.5

V_OL

V_OH1

V_OH2

V_LKO

Output Low Voltage

I_OL= 4.0 mA, V_CC= V_{CC min}= V_IO

I_OH= –2.0 mA, V_CC= V_{CC min}= V_IO0.85 V_IO

0.15 x V_IO

V

Output High Voltage

I_OH= –100 µA, V_CC= V_{CC min}= V_IO

V_IO–0.4

Low V_CCLock-Out Voltage (Note 8)

2.3

2.5

Notes:

1. The I_CCcurrent listed is typically less than 2 mA/MHz, with OE# at V_IH.

2. Maximum I_CCspecifications are tested with V_CC= V_CCmax.

3.

I_CCactive while Embedded Erase or Embedded Program is in progress.

4. Automatic sleep mode enables the low power mode when addresses remain stable for t_ACC+ 30 ns. Typical sleep mode current is

200 nA.

5. If V_IO< V_CC, maximum V_ILfor CE# and DQ I/Os is 0.3 V_IO. If V_IO< V_CC, minimum V_IHfor CE# and DQ I/Os is 0.7 V_IO. Maximum V_IH

for these connections is V_IO+ 0.3 V

6.

7.

V

_CCvoltage requirements.

_IOvoltage requirements. V_CC= 3 V and V_IO= 3 V or 1.8 V. When V_IOis at 1.8 V, I/Os cannot operate at 3 V.

8. Not 100% tested.

April 26, 2002

Am29LV640MU

37

A D V A N C E I N F O R M A T I O N

TEST CONDITIONS

Table 12. Test Specifications

3.3 V

Test Condition

Output Load

All Speeds

1 TTL gate

Unit

2.7 kΩ

Device

Under

Test

Output Load Capacitance, C_L

(including jig capacitance)

30

pF

Input Rise and Fall Times

Input Pulse Levels

5

ns

V

C

L

6.2 kΩ

0.0–3.0

Input timing measurement

reference levels (See Note)

1.5

V

Output timing measurement

reference levels

0.5 V_IO

Note: Diodes are IN3064 or equivalent

Figure 11. Test Setup

Note: If V_IO< V_CC, the reference level is 0.5 V_IO.

KEY TO SWITCHING WAVEFORMS

WAVEFORM

INPUTS

OUTPUTS

Steady

Changing from H to L

Changing from L to H

Changing, State Unknown

Don’t Care, Any Change Permitted

Does Not Apply

Center Line is High Impedance State (High Z)

3.0 V

1.5 V

0.5 V_IOV

Input

Measurement Level

Output

0.0 V

Note: If V_IO< V_CC, the input measurement reference level is 0.5 V_IO.

Figure 12. Input Waveforms and

Measurement Levels

38

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Read-Only Operations

Parameter

Speed Options

JEDEC Std. Description

Test Setup

90R

90

101

100

30

112

110

40

120

40

Unit

ns

t_AVAV

t_AVQV

t_ELQV

t_RCRead Cycle Time (Note 1)

Min

CE#, OE# = V_ILMax

t_ACCAddress to Output Delay

90

ns

t_CEChip Enable to Output Delay

t_PACCPage Access Time

OE# = V_IL

Max

90

ns

25

ns

t_GLQV

t_EHQZ

t_GHQZ

t_OEOutput Enable to Output Delay

t_DFChip Enable to Output High Z (Note 1)

t_DFOutput Enable to Output High Z (Note 1)

25

30

40

ns

25

ns

Output Hold Time From Addresses, CE#

or OE#, Whichever Occurs First

t_AXQX

t_OH

Min

0

ns

Read

Output Enable Hold

t_OEH

Toggle and

Data# Polling

Time (Note 1)

10

Notes:

1. Not 100% tested.

2. See Figure 11 and Table 12 for test specifications.

t_RC

Addresses Stable

t_ACC

Addresses

CE#

t_RH

t_DF

t_OE

OE#

t_OEH

WE#

t_CE

t_OH

HIGH Z

Output Valid

Outputs

RESET#

RY/BY#

0 V

Figure 13. Read Operation Timings

April 26, 2002

Am29LV640MU

39

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Same Page

A21

-

A2

A0

A1

Ad

Aa

t_ACC

Ab

t_PACC

Ac

t_PACC

Data Bus

CE#

Qa

Qb

Qc

Qd

OE#

Note: Toggle A0, A1, A2.

Figure 14. Page Read Timings

40

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Hardware Reset (RESET#)

Parameter

JEDEC

Std

Description

RESET# Pin Low (During Embedded Algorithms)

All Speed Options

Unit

t_Ready

Max

20

µs

to Read Mode (See Note)

RESET# Pin Low (NOT During Embedded

Algorithms) to Read Mode (See Note)

t_Ready

500

ns

t_RP

t_RH

t_RPD

t_RB

RESET# Pulse Width

Min

500

50

20

0

ns

µs

ns

Reset High Time Before Read (See Note)

RESET# Low to Standby Mode

RY/BY# Recovery Time

Note: Not 100% tested.

RY/BY#

CE#, OE#

RESET#

t_RH

t_RP

t_Ready

Reset Timings NOT during Embedded Algorithms

Reset Timings during Embedded Algorithms

t_Ready

RY/BY#

t_RB

CE#, OE#

RESET#

t_RP

Figure 15. Reset Timings

April 26, 2002

Am29LV640MU

41

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Erase and Program Operations

Parameter

Speed Options

JEDEC

t_AVAV

Std.

t_WC

t_AS

Description

90R

101

112

120

Unit

ns

Write Cycle Time (Note 1)

Address Setup Time

Min

90

100

110

120

t_AVWL

0

15

45

0

ns

Address Setup Time to OE# low during toggle bit

polling

t_ASO

t_AH

Min

ns

t_WLAX

Address Hold Time

Address Hold Time From CE# or OE# high

during toggle bit polling

t_AHT

t_DVWH

t_WHDX

t_DS

t_DH

Data Setup Time

Min

45

0

ns

Data Hold Time

t_OEPH

Output Enable High during toggle bit polling

20

Read Recovery Time Before Write

(OE# High to WE# Low)

t_GHWL

Min

0

ns

t_ELWL

t_WHEH

t_WLWH

t_WHDL

t_CS

t_CH

t_WP

t_WPH

CE# Setup Time

Min

Typ

0

ns

µs

CE# Hold Time

Write Pulse Width

35

30

100

Write Pulse Width High

Write Buffer Program Operation (Notes 2, 3)

Effective Write Buffer Program Operation, Per

Word (Notes 2, 4)

Typ

5.9

µs

Accelerated Effective Write Buffer Program

Operation, Per Word (Notes 2, 4)

t_WHWH1

Typ

4.7

100

80

µs

Single Word Program (Note 2)

Accelerated Single Word Programming

Operation (Note 2)

t_WHWH2

t_WHWH2Sector Erase Operation (Note 2)

Typ

Min

0.4

250

50

0

sec

ns

µs

ns

t_VHH

t_VCS

t_RB

V_HHRise and Fall Time (Note 1)

V_CCSetup Time (Note 1)

Write Recovery Time from RY/BY#

Program/Erase Valid to RY/BY# Delay

t_BUSY

90

Notes:

1. Not 100% tested.

2. See the “Erase And Programming Performance” section for more information.

3. For 1–16 words programmed.

4. Effective write buffer specification is based upon a 16-word write buffer operation.

42

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Program Command Sequence (last two cycles)

Read Status Data (last two cycles)

t_AS

PA

t_WC

Addresses

555h

PA

t_AH

CE#

OE#

t_CH

t_WHWH1

t_WP

WE#

Data

t_WPH

t_CS

t_DS

t_DH

PD

D_OUT

A0h

Status

t_BUSY

t_RB

RY/BY#

V_CC

t_VCS

Note: PA = program address, PD = program data, D_OUTis the true data at the program address.

Figure 16. Program Operation Timings

V_HH

V_ILor V_IH

ACC

t_VHH

Figure 17. Accelerated Program Timing Diagram

April 26, 2002

Am29LV640MU

43

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Erase Command Sequence (last two cycles)

Read Status Data

VA

t_AS

SA

t_WC

VA

Addresses

CE#

2AAh

555h for chip erase

t_AH

t_CH

OE#

t_WP

WE#

t_WPH

t_WHWH2

t_CS

t_DS

t_DH

In

Data

Complete

55h

30h

Progress

10 for Chip Erase

t_BUSY

t_RB

RY/BY#

V_CC

t_VCS

Notes: SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).

Figure 18. Chip/Sector Erase Operation Timings

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Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

t_RC

Addresses

VA

t_ACC

t_CE

VA

CE#

t_CH

t_OE

OE#

t_OEH

WE#

t_DF

t_OH

High Z

DQ7

Valid Data

Complement

True

DQ0–DQ6

Status Data

True

Valid Data

Status Data

t_BUSY

RY/BY#

Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data

read cycle.

Figure 19. Data# Polling Timings

(During Embedded Algorithms)

April 26, 2002

Am29LV640MU

45

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

t_AHT

t_AS

Addresses

t_AHT

t_ASO

CE#

t_OEH

WE#

t_CEPH

t_OEPH

OE#

t_DH

Valid Data

t_OE

Valid

Status

Valid

Status

Valid

Status

DQ6/DQ2

RY/BY#

Valid Data

(first read)

(second read)

(stops toggling)

Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status

read cycle, and array data read cycle

Figure 20. Toggle Bit Timings

(During Embedded Algorithms)

Enter

Embedded

Erasing

Erase

Suspend

Enter Erase

Suspend Program

Erase

Resume

Erase

Erase Suspend

Read

Erase

Suspend

Program

Erase

Complete

WE#

Erase

Erase Suspend

Read

DQ6

DQ2

Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle

DQ2 and DQ6.

Figure 21. DQ2 vs. DQ6

46

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Temporary Sector Unprotect

Parameter

JEDEC

Std

Description

All Speed Options

Unit

t_VIDR

V_IDRise and Fall Time (See Note)

Min

500

ns

RESET# Setup Time for Temporary Sector

Unprotect

t_RSP

4

µs

RESET# Hold Time from RY/BY# High for

Temporary Sector Group Unprotect

t_RRB

Min

Note: Not 100% tested.

V_ID

RESET#

V_SS, V_IL,

or V_IH

V_SS, V_IL,

or V_IH

t_VIDR

Program or Erase Command Sequence

CE#

WE#

t_RRB

t_RSP

RY/BY#

Figure 22. Temporary Sector Group Unprotect Timing Diagram

April 26, 2002

Am29LV640MU

47

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

V

ID

IH

V

RESET#

SA, A6,

A1, A0

Valid*

Status

Sector Group Protect or Unprotect

Verify

40h

Data

60h

Sector Group Protect: 150 µs,

Sector Group Unprotect: 15 ms

1 µs

CE#

WE#

OE#

* For sector group protect, A6:A0 = 0xx0010. For sector group unprotect, A6:A0 = 1xx0010.

Figure 23. Sector Group Protect and Unprotect Timing Diagram

48

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

Alternate CE# Controlled Erase and Program Operations

Parameter

Speed Options

JEDEC

t_AVAV

Std.

t_WC

t_AS

Description

90R

101R

112R

120

Unit

ns

Write Cycle Time (Note 1)

Address Setup Time

Address Hold Time

Data Setup Time

Data Hold Time

Min

90

100

110

120

t_AVWL

t_ELAX

t_DVEH

t_EHDX

0

45

0

ns

t_AH

ns

t_DS

ns

t_DH

ns

Read Recovery Time Before Write

(OE# High to WE# Low)

t_GHEL

Min

0

ns

t_WLEL

t_EHWH

t_ELEH

t_EHEL

t_WS

t_WH

t_CP

WE# Setup Time

WE# Hold Time

Min

0

ns

CE# Pulse Width

CE# Pulse Width High

45

30

t_CPH

Write Buffer Program Operation

(Notes 2, 3)

Typ

100

5.9

µs

Effective Write Buffer Program Operation,

Per Word (Notes 2, 4)

t_WHWH1

Accelerated Effective Write Buffer Program

Operation, Per Word (Notes 2, 4)

Typ

4.7

100

80

µs

Single Word Program (Note 2)

Accelerated Single Word Programming

Operation (Note 2)

µs

t_WHWH2

Notes:

t_WHWH2

Sector Erase Operation (Note 2)

0.4

sec

1. Not 100% tested.

2. See the “Erase And Programming Performance” section for more information. Write buffer program is typical per word.

3. For 1–16 words programmed.

4. Effective write buffer specification is based upon a 16-word write buffer operation.

April 26, 2002

Am29LV640MU

49

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

555 for program

2AA for erase

PA for program

SA for sector erase

555 for chip erase

Data# Polling

Addresses

PA

t_WC

t_WH

t_AS

t_AH

WE#

OE#

t_GHEL

t_{WHWH1 or 2}

t_CP

CE#

Data

t_WS

t_CPH

t_DS

t_BUSY

t_DH

DQ7#

D_OUT

t_RH

A0 for program

55 for erase

PD for program

30 for sector erase

10 for chip erase

RESET#

RY/BY#

Notes:

1. Figure indicates last two bus cycles of a program or erase operation.

2. PA = program address, SA = sector address, PD = program data.

3. DQ7# is the complement of the data written to the device. D_OUTis the data written to the device.

Figure 24. Alternate CE# Controlled Write (Erase/Program)

Operation Timings

50

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

ERASE AND PROGRAMMING PERFORMANCE

Parameter

Typ (Note 1) Max (Note 2)

Unit

sec

µs

Comments

Sector Erase Time

0.4

90

15

Excludes 00h programming

prior to erasure (Note 4)

Chip Erase Time

Effective Write Buffer Program Time, Per Word

Word Program Time

5.9

210

218

100

4.8

µs

Excludes system level

overhead (Note 5)

Accelerated Word Program Time

Chip Program Time (Note 3)

Notes:

TBD

µs

TBD

sec

1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V_CC, 100,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90°C, V_CC= 3.0 V, 100,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words

program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table

10 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 100,000 cycles.

LATCHUP CHARACTERISTICS

Description

Min

Max

Input voltage with respect to V_SSon all pins except I/O pins

(including A9, OE#, and RESET#)

–1.0 V

12.5 V

Input voltage with respect to V_SSon all I/O pins

V_CCCurrent

–1.0 V

V_CC+ 1.0 V

+100 mA

–100 mA

Note: Includes all pins except V_CC. Test conditions: V_CC= 3.0 V, one pin at a time.

TSOP PIN CAPACITANCE

Parameter

Symbol

Parameter Description

Input Capacitance

Test Setup

V_IN= 0

Typ

6

Max

7.5

12

Unit

pF

C_IN

C_OUT

C_IN2

Output Capacitance

Control Pin Capacitance

V_OUT= 0

V_IN= 0

8.5

7.5

pF

9

pF

Notes:

1. Sampled, not 100% tested.

2. Test conditions T_A= 25°C, f = 1.0 MHz.

DATA RETENTION

Parameter Description

Test Conditions

150°C

Min

10

Unit

Years

Minimum Pattern Data Retention Time

125°C

20

April 26, 2002

Am29LV640MU

51

A D V A N C E I N F O R M A T I O N

PHYSICAL DIMENSIONS

LAA064—64-Ball Fortified Ball Grid Array (FBGA) 13 x 11 mm Package

52

Am29LV640MU

April 26, 2002

A D V A N C E I N F O R M A T I O N

PHYSICAL DIMENSIONS

FBE063—63-Ball Fine-Pitch Ball Grid Array (FBGA) 12 x 11 mm Package

Dwg rev AF; 10/99

April 26, 2002

Am29LV640MU

53

A D V A N C E I N F O R M A T I O N

REVISION SUMMARY

tain specifications for the Am29LV640MU part num-

ber. For Am29LV640MH/L part number specifications,

refer to publication number 26191.

Revision A (August 3, 2001)

Initial release as abbreviated Advance Information

data sheet.

Revision B+1 (April 26, 2002)

Revision A+1 (September 12, 2001)

Global

Changed description of chip-scale package from

63-ball FBGA to 64-ball Fortified BGA.

Deleted references to word mode.

MirrorBit 64 Mbit Device Family

Ordering Information

Deleted Am29LV641MT/B.

Changed package part number designation from WH

to PC.

Figure 2, In-System Sector Group

Protect/Unprotect Algorithms

Physical Dimensions

Added the TS056 and LAA064 packages.

Modified to show A2, A3 address requirements.

Revision A+2 (October 3, 2001)

Sector Protection/Unprotecton

Global

Deleted references to alternate method of sector pro-

tection.

Added information for WP# protected devices

(LV640MH/L). Clarfied V_CCand V_IOranges.

Autoselect Command

Connection Diagrams

Substituted text with ID code table for easier refer-

ence.

Changed RFU (reserved for future use) to NC (no con-

nection). Added 63-ball FBGA drawing.

Table 10, Command Definitions

Ordering Information

Combined Notes 4 and 5 from Revision B. Corrected

number of cycles indicated for Write-to-Buffer and Au-

toselect Device ID command sequences.

Added H and L valid combinations for WP# protected

devices. Changed voltage operating range for 90 ns

device.

Revision B (March 19, 2002)

Global

Expanded data sheet to full specification version.

Starting with this revision, the data sheet will only con-

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

ExpressFlash is a trademark of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

54

Am29LV640MU

April 26, 2002


型号：	AM29LV640MU120
厂家：	AMD
描述：	64 Megabit (4 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control 64兆位（4M ×16位） MirrorBit⑩ 3.0伏只统一部门快闪记忆体与VersatileI / O⑩控制
文件：	总54页 (文件大小：1071K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AM29LV640MU120 [AMD]

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