AM29LV400BB-120DTC1 [AMD]
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory; 4兆位（ 512K的×8位/ 256千×16位） CMOS 3.0伏只，引导扇区闪存
| 型号： | AM29LV400BB-120DTC1 |
| 厂家： | 
AMD |
| 描述： | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory |
| 文件： | 总14页 (文件大小：380K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Am29LV400B KGD
Data Sheet
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig-
inally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 23427 Revision C Amendment 0 Issue Date October 15, 2003
THIS PAGE LEFT INTENTIONALLY BLANK.
SUPPLEMENT
Am29LV400B Known Good Die
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
■ Embedded Algorithms
— 2.7 to 3.6 V for read, program, and erase
operations
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Ideal for battery-powered applications
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Manufactured on 0.32 µm process technology
■ High performance
■ Minimum 1,000,000 write cycle guarantee
— 60R, 70, 80, 90, or 120 ns access time
per sector
■ Low power consumption (typical values at
■ Compatibility with JEDEC standards
5 MHz)
— Pinout and software compatible with single-
power supply Flash
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— 15 mA program/erase current
— Provides a software method of detecting program
or erase operation completion
■ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
■ Erase Suspend/Erase Resume
— Supports full chip erase
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
■ Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ 20-year data retention at 125°C
■ Tested to datasheet specifications at
■ Unlock Bypass Program Command
temperature
— Reduces overall programming time when issuing
multiple program command sequences
■ Quality and reliability levels equivalent to
standard packaged components
■ Top or bottom boot block configurations
available
Publication# 23427 Rev: C Amendment/0
Issue Date: October 15, 2003
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29LV400B in Known Good Die (KGD) form is
an 4 Mbit, 3.0 volt-only Flash memory. AMD defines
KGD as standard product in die form, tested for function-
ality and speed. AMD KGD products have the same reli-
ability and quality as AMD products in packaged form.
Hardware data protection measures include a low
VCC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of
memory. This can be achieved in-system or via pro-
gramming equipment.
Am29LV400B Features
The Am29LV400B is an 4 Mbit, 3.0 volt-only Flash
memory organized as 524,288 bytes or 262,144 words.
The word-wide data (x16) appears on DQ15–DQ0; the
byte-wide (x8) data appears on DQ7–DQ0. To elimi-
nate bus contention the device has separate chip
enable (CE#), write enable (WE#) and output enable
(OE#) controls.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The hardware RESET# terminates any operation in
progress and resets the internal state machine to
reading array data. The RESET# may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device requires only a single 3.0 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations. No VPP is required for
program or erase operations.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using stan-
dard microprocessor write timings. Register contents
serve as input to an internal state-machine that con-
trols the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within
a sector simultaneously via Fowler-Nordheim tun-
neling. The data is programmed using hot electron injec-
tion.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Electrical Specifications
Refer to the Am29LV400B data sheet, publication
number 21523, for full electrical specifications on the
Am29LV400B in KGD form.
Device erasure occurs by executing the erase
command sequence. This initiates the Embedded
Erase algorithm—an internal algorithm that automati-
cally preprograms the array (if it is not already pro-
grammed) before executing the erase operation.
During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data
or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
2
Am29LV400B Known Good Die
S U P P L E M E N T
PRODUCT SELECTOR GUIDE
Family Part Number
Am29LV400B KGD
3.0 – 3.6 V
2.7 – 3.6 V
-60R
Speed Option & Voltage
Operating Range, V
CC
-70
-80
80
80
30
-90
90
90
35
-120
120
120
50
Max Access Time, t
(ns)
60
60
30
70
70
30
ACC
Max CE# Access, t (ns)
CE
Max OE# Access, t (ns)
OE
Note: Refer to “Test Conditions” for additional information related to speed options.
DIE PHOTOGRAPH
DIE PAD LOCATIONS
9
8
7
6
5
4
3
2
1 43 42 41 40 39 38 37 36 35
10
34
11
12
33
32
AMD logo location
22
13 14 15 16 17 18 19 20 21
23
24 25 26 27 28 29 30 31
Am29LV400B Known Good Die
3
S U P P L E M E N T
PAD DESCRIPTION
Pad locations relative to die center.
Pad Center (mils)
Pad Center (millimeters)
Pad
Signal
X
Y
X
Y
1
V
–0.90
–13.00
–18.90
–24.80
–30.70
–36.50
–42.40
–48.30
–54.20
–63.60
–63.60
–63.60
–63.30
–55.90
–50.50
–44.70
–39.30
–33.40
–28.00
–22.10
–16.60
–7.10
10.20
22.20
28.00
33.40
39.30
44.70
50.50
55.90
63.30
63.60
63.60
63.60
54.20
46.60
40.70
34.90
28.90
23.10
17.20
11.40
5.40
80.50
80.50
–0.02
–0.33
–0.48
–0.63
–0.78
–0.93
–1.08
–1.23
–1.38
–1.62
–1.62
–1.62
–1.61
–1.42
–1.28
–1.14
–1.00
–0.85
–0.71
–0.56
–0.42
–0.18
0.26
2.04
CC
2
DQ4
DQ12
DQ5
2.04
3
80.50
2.04
4
80.50
2.04
5
DQ13
DQ6
80.50
2.04
6
80.50
2.04
7
DQ14
DQ7
80.50
2.04
8
80.50
2.04
9
DQ15/A–1
80.50
2.04
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
V
78.90
2.00
SS
BYTE#
A16
A15
A14
A13
A12
A11
A10
A9
68.90
1.75
58.80
1.49
–79.00
–79.00
–79.00
–79.00
–79.00
–79.00
–78.70
–79.00
–79.00
–82.80
–82.80
–79.00
–79.00
–79.00
–79.00
–79.00
–79.00
–79.00
–79.00
58.60
–2.01
–2.01
–2.01
–2.01
–2.01
–2.01
–2.00
–2.01
–2.01
–2.10
–2.10
–2.01
–2.01
–2.01
–2.01
–2.01
–2.01
–2.01
–2.01
1.49
A8
WE#
RESET#
RY/BY#
A17
A7
0.56
0.71
A6
0.85
A5
1.00
A4
1.14
A3
1.28
A2
1.42
A1
1.61
A0
1.62
CE#
68.70
1.62
1.75
V
78.70
1.62
2.00
SS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
81.40
1.38
2.07
80.50
1.18
2.04
80.50
1.03
2.04
80.50
0.89
2.04
80.50
0.73
2.04
80.50
0.59
2.04
80.50
0.44
2.04
80.50
0.29
2.04
80.50
0.14
2.04
Note: The coordinates above are relative to die center and can be used to operate wire bonding equipment.
4
Am29LV400B Known Good Die
S U P P L E M E N T
PAD DESCRIPTION
Pad locations relative to VCC
.
Pad Center (mils)
Pad Center (millimeters)
Pad
Signal
X
Y
X
Y
1
2
3
4
5
6
7
8
V
0.00
0.00
0.00
0.00
0.00
CC
DQ4
DQ12
DQ5
–12.10
–18.00
–23.90
–29.80
–35.60
–41.50
–47.40
–53.30
–62.70
–62.70
–62.70
–62.40
–55.00
–49.60
–43.80
–38.40
–32.50
–27.10
–21.20
–15.70
–6.20
11.10
23.10
28.90
34.30
40.20
45.60
51.40
56.80
64.20
64.50
64.50
64.50
55.10
47.50
41.60
35.80
29.80
24.00
18.10
12.30
6.30
–0.31
–0.46
–0.61
–0.76
–0.90
–1.05
–1.20
–1.35
–1.59
–1.59
–1.59
–1.58
–1.40
–1.26
–1.11
–0.98
–0.83
–0.69
–0.54
–0.40
–0.16
0.28
0.00
0.00
0.00
0.00
0.00
DQ13
DQ6
0.00
0.00
0.00
0.00
DQ14
DQ7
0.00
0.00
0.00
0.00
9
DQ15/A–1
0.00
0.00
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
V
–1.60
–0.04
–0.29
–0.55
–4.05
–4.05
–4.05
–4.05
–4.05
–4.05
–4.04
–4.05
–4.05
–4.15
–4.15
–4.05
–4.05
–4.05
–4.05
–4.05
–4.05
–4.05
–4.05
–0.56
–0.30
–0.05
0.02
SS
BYTE#
A16
A15
A14
A13
A12
A11
A10
A9
–11.60
–21.70
–159.50
–159.50
–159.50
–159.50
–159.50
–159.50
–159.20
–159.50
–159.50
–163.30
–163.30
–159.50
–159.50
–159.50
–159.50
–159.50
–159.50
–159.50
–159.50
–21.90
–11.80
–1.80
A8
WE#
RESET#
RY/BY#
A17
A7
0.59
0.73
A6
0.87
A5
1.02
A4
1.16
A3
1.31
A2
1.44
A1
1.63
A0
1.64
CE#
1.64
V
1.64
SS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
0.90
1.40
0.00
1.21
0.00
0.00
1.06
0.00
0.00
0.91
0.00
0.00
0.76
0.00
0.00
0.61
0.00
0.00
0.46
0.00
0.00
0.31
0.00
0.00
0.16
0.00
Note: The coordinates above are relative to the die center and can be used to operate wire bonding equipment.
Am29LV400B Known Good Die
5
S U P P L E M E N T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Am29LV400B
T
-70
DP
C
1
DIE REVISION
This number refers to the specific AMD manufacturing process and
product technology reflected in this document. It is entered in the
revision field of AMD standard product nomenclature.
TEMPERATURE RANGE
C
I
=
=
=
Commercial (0°C to +70°C)
Industrial (–40°C to +85°C)
Extended (–55°C to +125°C)
E
PACKAGE TYPE AND
MINIMUM ORDER QUANTITY
DP
DT
DW
=
=
=
Waffle Pack
210 die per 5 tray stack
Surftape™ (Tape and Reel)
2500 per 7-inch reel
Gel-Pak® Wafer Tray (sawn wafer on frame)
Call AMD sales office for minimum order quantity
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
B
=
=
Top sector
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29LV400B Known Good Die
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory
3.0 Volt-only Program and Erase
Valid Combinations
Valid Combinations
AM29LV400BT-60R
V
Range
CC
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
3.0–3.6 V
DPC 1, DPI 1,
DTC 1, DTI 1,
DWC 1, DWI 1
AM29LV400BB-60R
AM29LV400BT-70
AM29LV400BB-70
AM29LV400BT-80
AM29LV400BB-80
2.7–3.6 V
DPC 1, DPI 1, DPE 1
DTC 1, DTI 1, DTE 1
DWC 1, DWI 1, DWE 1
AM29LV400BT-90
AM29LV400BB-90
AM29LV400BT-120
AM29LV400BB-120
6
Am29LV400B Known Good Die
S U P P L E M E N T
PACKAGING INFORMATION
Surftape Packaging
Direction of Feed
Orientation relative to
leading edge of tape
and reel
AMD logo location
Gel-Pak and Waffle Pack Packaging
Orientation relative to
top left corner of
Gel-Pak
and Waffle Pack
cavity plate
AMD logo location
Am29LV400B Known Good Die
7
S U P P L E M E N T
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29LV400B product qualification database supple-
ment for KGD. AMD implements quality assurance pro-
cedures throughout the product test flow. In addition,
an off-line quality monitoring program (QMP) further
guarantees AMD quality standards are met on Known
Good Die products. These QA procedures also allow
AMD to produce KGD products without requiring or
implementing burn-in.
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 1
Data Retention
Bake
24 hours at 250°C
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 2
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 3
High Temperature
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
Packaging for Shipment
Shipment
Figure 1. AMD KGD Product Test Flow
8
Am29LV400B Known Good Die
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
MANUFACTURING INFORMATION
Die dimensions . . . . . . . . . . . . . . 185 mils x 140 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 4.70 mm x 3.56 mm
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . . FASL
Test . . . . . . . . . . . . . . . . . . . . . . . . Penang, Malaysia
Manufacturing ID (Top Boot) . . . . . . . . . . . . .98F03AK
(Bottom Boot). . . . . . . . 98F03ABK
Die Thickness. . . . . . . . . . . . . . . . . . . . . . . . . .500 µm
Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils
. . . . . . . . . . . . . . . . . . . . . . . . . 115.9 µm x 115.9 µm
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pad Area Free of Passivation . . . . . . . . . .13.99 mils2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 µm2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43
Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
SPECIAL HANDLING INSTRUCTIONS
Processing
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
DC OPERATING CONDITIONS
VCC (Supply Voltage) . . . . . . . . . . . . . . .2.7 V to 3.6 V
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C
Storage
Store at a maximum temperature of 30°C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
TEST CONDITIONS
60R,
70, 80
3.3 V
Test Condition
90, 120 Unit
Input timing measurement
reference levels
1.5
1.5
V
2.7 kΩ
Device
Under
Test
Output timing measurement
reference levels
V
C
6.2 kΩ
L
Note:Diodes are IN3064 or equivalent
Figure 1. Test Setup
Table 1. Test Specifications
60R,
Test Condition
70, 80
90, 120 Unit
Output Load
1 TTL gate
Output Load Capacitance, C
(including jig capacitance)
L
30
100
pF
Input Rise and Fall Times
Input Pulse Levels
5
ns
V
0.0–3.0
Am29LV400B Known Good Die
9
S U P P L E M E N T
WITHOUT LIMITING THE FOREGOING, EXCEPT TO
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
THE EXTENT THAT AMD EXPRESSLY WARRANTS
TO BUYER IN A SEPARATE AGREEMENT SIGNED
BY AMD, AMD MAKES NO WARRANTY WITH
RESPECT TO THE DIE’S PROCESSING OF DATE
DATA, AND SHALL HAVE NO LIABILITY FOR
DAMAGES OF ANY KIND, UNDER EQUITY, LAW, OR
ANY OTHER THEORY, DUE TO THE FAILURE OF
SUCH KNOWN GOOD DIE TO PROCESS ANY PAR-
TICULAR DATA CONTAINING DATES, INCLUDING
DATES IN AND AFTER THE YEAR 2000, WHETHER
OR NOT AMD RECEIVED NOTICE OF THE POSSI-
BILITY OF SUCH DAMAGES.
All transactions relating to unpackaged die under this
agreement shall be subject to AMD’s standard terms
and conditions of sale, or any revisions thereof, which
revisions AMD reserves the right to make at any time
and from time to time. In the event of conflict between
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
AMD warrants unpackaged die of its manufacture
(“Known Good Die” or “Die”) against defective mate-
rials or workmanship for a period of one (1) year from
date of shipment. This warranty does not extend
beyond the first purchaser of said Die. Buyer assumes
full responsibility to ensure compliance with the
appropriate handling, assembly and processing of
Known Good Die (including but not limited to proper
Die preparation, Die attach, wire bonding and related
assembly and test activities), and compliance with all
guidelines set forth in AMD’s specifications for Known
Good Die, and AMD assumes no responsibility for envi-
ronmental effects on Known Good Die or for any
activity of Buyer or a third party that damages the Die
due to improper use, abuse, negligence, improper
installation, accident, loss, damage in transit, or unau-
thorized repair or alteration by a person or entity other
than AMD (“Warranty Exclusions”).
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’s
PART, AND IT NEITHER ASSUMES NOR AUTHO-
RIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYER’S SOLE AND EXCLU-
SIVE REMEDY FOR THE FURNISHING OF DEFEC-
TIVE OR NON CONFORMING KNOWN GOOD DIE
AND AMD SHALL NOT IN ANY EVENT BE LIABLE
FOR INCREASED MANUFACTURING COSTS,
DOWNTIME COSTS, DAMAGES RELATING TO
BUYER’S PROCUREMENT OF SUBSTITUTE DIE
(i.e., “COST OF COVER”), LOSS OF PROFITS, REV-
ENUES OR GOODWILL, LOSS OF USE OF OR
DAMAGE TO ANY ASSOCIATED EQUIPMENT,
OR ANY OTHER INDIRECT, INCIDENTAL, SPECIAL
OR CONSEQUENTIAL DAMAGES BY REASON OF
THE FACT THAT SUCH KNOWN GOOD DIE SHALL
HAVE BEEN DETERMINED TO BE DEFECTIVE OR
NON CONFORMING.
The liability of AMD under this warranty is limited, at
AMD’s option, solely to repair the Die, to send replace-
ment Die, or to make an appropriate credit adjustment
or refund in an amount not to exceed the original pur-
chase price actually paid for the Die returned to AMD,
provided that: (a) AMD is promptly notified by Buyer in
writing during the applicable warranty period of any
defect or nonconformity in the Known Good Die; (b)
Buyer obtains authorization from AMD to return the
defective Die; (c) the defective Die is returned to AMD
by Buyer in accordance with AMD’s shipping instruc-
tions set forth below; and (d) Buyer shows to AMD’s
satisfaction that such alleged defect or nonconformity
actually exists and was not caused by any of the above-
referenced Warranty Exclusions. Buyer shall ship such
defective Die to AMD via AMD’s carrier, collect. Risk of
loss will transfer to AMD when the defective Die is pro-
vided to AMD’s carrier. If Buyer fails to adhere to these
warranty returns guidelines, Buyer shall assume all risk
of loss and shall pay for all freight to AMD’s specified
location. The aforementioned provisions do not extend
the original warranty period of any Known Good Die
that has either been repaired or replaced by AMD.
Buyer agrees that it will make no warranty representa-
tions to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in writing for any claims which exceed
AMD’s warranty.
Known Good Die are not designed or authorized for
use as components in life support appliances, devices
or systems where malfunction of the Die can reason-
ably be expected to result in a personal injury. Buyer’s
use of Known Good Die for use in life support applica-
tions is at Buyer’s own risk and Buyer agrees to fully
indemnify AMD for any damages resulting in such use
or sale.
10
Am29LV400B Known Good Die
S U P P L E M E N T
REVISION SUMMARY
Revision A (December 10, 1999)
Initial release.
Revision B (December 10, 2001)
Added 60R, 70 speed options. Added test conditions
section.
Revision B+1 (March 12, 2002)
Pad Description
Added table of pad locations relative to die center. Cor-
rected X,Y orientation for pad locations relative to VCC
.
Manufacturing Information
Changed test facility to Penang, Malaysia (ACN2016).
Revision C (October 15, 2003)
Pad Description - Pad Locations Relative to Die
Center
Modified Pad Center (mils), Y, #12 to 58.80, and Pad
Center (millimeters), Y, #12 to 1.49.
Am29LV400B Features
Removed last sentence of 2nd paragraph (The device
can also be programmed in standard EPROM pro-
grammers). Removed mention of “pin”.
Trademarks
Updated to 2003.
Trademarks
Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
Am29LV400B Known Good Die
11
Representatives in U.S. and Canada
Sales Offices and Representatives
ARIZONA,
North America
Tempe - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(480)839-2320
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es
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WISCONSIN,
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Advanced Micro Devices reserves the right to make changes in its product without notice
in order to improve design or performance characteristics.The performance
characteristics listed in this document are guaranteed by specific tests, guard banding,
design and other practices common to the industry. For specific testing details, contact
your local AMD sales representative.The company assumes no responsibility for the use of
any circuits described herein.
Representatives in Latin America
ARGENTINA,
Capital Federal Argentina/WW Rep. . . . . . . . . . . . . . . . . . . .54-11)4373-0655
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PUERTO RICO,
© Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD Arrow logo and combination thereof, are trademarks of
Advanced Micro Devices, Inc. Other product names are for informational purposes only
and may be trademarks of their respective companies.
Boqueron - Infitronics. . . . . . . . . . . . . . . . . . . . . . . . . . . .(787)851-6000
One AMD Place, P.O. Box 3453, Sunnyvale, CA 94088-3453 408-732-2400
TWX 910-339-9280 TELEX 34-6306 800-538-8450 http://www.amd.com
©2003 Advanced Micro Devices, Inc.
01/03
Printed in USA
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