AM29LV200BT30DWE1_技术文档

SUPPLEMENT

Am29LV200B Known Good Die

2 Megabit (256 K x 8-Bit/128 K x 16-Bit)

CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Embedded Algorithms

— 2.7 to 3.6 volt read and write operations for

battery-powered applications

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ Manufactured on 0.32 µm process technology

■ High performance

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

— 60R, 70, 90, 120 ns access time

■ Minimum 1,000,000 write cycle guarantee

■ Low power consumption (typical values at

per sector

5 MHz)

■ Compatibility with JEDEC standards

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— Pinout and software compatible with single-

power supply Flash

— Superior inadvertent write protection

— 15 mA program/erase current

■ Data# Polling and toggle bits

■ Flexible sector architecture

— Provides a software method of detecting program

or erase operation completion

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

seven 64 Kbyte sectors (byte mode)

■ Ready/Busy# pin (RY/BY#)

— One 8 Kword, two 4 Kword, one 16 Kword, and

seven 32 Kword sectors (word mode)

— Provides a hardware method of detecting

program or erase cycle completion

— Supports full chip erase

— Sector Protection features:

■ Erase Suspend/Erase Resume

A hardware method of locking a sector to prevent

any program or erase operations within that

sector

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

Sectors can be locked in-system or via

programming equipment

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ 20-year data retention at 125°C

■ Unlock Bypass Program Command

■ Tested to datasheet specifications at

— Reduces overall programming time when issuing

multiple program command sequences

temperature

■ Quality and reliability levels equivalent to

■ Top or Bottom boot block configuration

standard packaged components

■ 500 µm or 280 µm die thickness shipping options

Publication# 26014

Rev: A Amendment/+2

Issue Date: November 18, 2003

S U P P L E M E N T

GENERAL DESCRIPTION

The Am29LV200B in Known Good Die (KGD) form is a

2 Mbit, 3.0 volt-only Flash memory. AMD defines KGD

as standard product in die form, tested for functionality

and speed. AMD KGD products have the same reliability

and quality as AMD products in packaged form.

The host system can detect whether a program or

erase operation is complete by observing the RY/BY#

pin, or by reading the DQ7 (Data# Polling) and DQ6

(toggle) status bits. After a program or erase cycle

has been completed, the device is ready to read array

data or accept another command.

Am29LV200B Features

The sector erase architecture allows memory sectors

to be erased and reprogrammed without affecting the

data contents of other sectors. The device is fully

erased when shipped from the factory.

The Am29LV200B is an 2 Mbit, 3 volt-only Flash

memory organized as 262,144 bytes or 131,072 words.

The word-wide data (x16) appears on DQ15–DQ0; the

byte-wide (x8) data appears on DQ7–DQ0. To elimi-

nate bus contention the device has separate chip

enable (CE#), write enable (WE#) and output enable

(OE#) controls.

Hardware data protection measures include a low

V

detector that automatically inhibits write opera-

CC

tions during power transitions. The hardware sector

protection feature disables both program and erase

operations in any combination of the sectors of

memory. This can be achieved in-system or via pro-

gramming equipment.

The device requires only a single 3 volt power supply

for both read and write functions. Internally generated

and regulated voltages are provided for the program

and erase operations. No V is required for program

PP

or erase operations. The device can also be pro-

grammed in standard EPROM programmers.

The Erase Suspend feature enables the user to put

erase on hold for any period of time to read data from,

or program data to, any sector that is not selected for

erasure. True background erase can thus be achieved.

The device is entirely command set compatible with the

JEDEC single-power-supply Flash standard. Com-

mands are written to the command register using stan-

dard microprocessor write timings. Register contents

serve as input to an internal state-machine that con-

trols the erase and programming circuitry. Write cycles

also internally latch addresses and data needed for the

programming and erase operations. Reading data out

of the device is similar to reading from other Flash or

EPROM devices.

The hardware RESET# pin terminates any operation

in progress and resets the internal state machine to

reading array data. The RESET# pin may be tied to the

system reset circuitry. A system reset would thus also

reset the device, enabling the system microprocessor

to read the boot-up firmware from the Flash memory.

The device offers two power-saving features. When

addresses have been stable for a specified amount of

time, the device enters the automatic sleep mode.

The system can also place the device into the standby

mode. Power consumption is greatly reduced in both

these modes.

Device programming occurs by executing the program

command sequence. This initiates the Embedded

Program algorithm—an internal algorithm that auto-

matically times the program pulse widths and verifies

proper cell margin. The Unlock Bypass mode facili-

tates faster programming times by requiring only two

write cycles to program data instead of four.

AMD’s Flash technology combines years of Flash

memory manufacturing experience to produce the

highest levels of quality, reliability and cost effective-

ness. The device electrically erases all bits within

a sector simultaneously via Fowler-Nordheim tun-

neling. The data is programmed using hot electron injec-

tion.

Device erasure occurs by executing the erase

command sequence. This initiates the Embedded

Erase algorithm—an internal algorithm that automati-

cally preprograms the array (if it is not already pro-

grammed) before executing the erase operation.

During erase, the device automatically times the erase

pulse widths and verifies proper cell margin.

Electrical Specifications

Refer to the Am29LV200B data sheet, for full electrical

specifications on the Am29LV200B in KGD form.

2

Am29LV200B Known Good Die

November 18, 2003

S U P P L E M E N T

PRODUCT SELECTOR GUIDE

Family Part Number

Am29LV200B

Regulated Voltage Range: V = 3.0–3.6 V

60R

70R

CC

Speed Options

Max access time, ns (t

Full Voltage Range: V = 2.7–3.6 V

70

30

90

35

120

50

CC

)

60

30

70

30

ACC

Max CE# access time, ns (t

)

CE

Max OE# access time, ns (t

)

OE

DIE PHOTOGRAPH

DIE PAD LOCATIONS

9

8

7

6

5

4

3

2

1

43 42 41 40 39 38 37 36 35

10

34

11

12

33

32

AMD logo location

22

13 14 15 16 17 18 19 20 21

23

24 25 26 27 28 29 30 31

November 18, 2003

Am29LV200B Known Good Die

3

S U P P L E M E N T

PAD DESCRIPTION (RELATIVE TO DIE CENTER)

Pad Center (mils)

Pad Center (millimeters)

Pad

Signal

X

Y

X

Y

1

V

–0.90

–13.00

–18.90

–24.80

–30.70

–36.50

–42.40

–48.30

–54.20

–63.60

–63.30

–55.90

–50.50

–44.70

–39.30

–33.40

–28.00

–22.10

–16.60

–7.10

10.20

N/A

57.70

56.20

46.10

36.00

–54.80

–54.60

–54.80

–58.60

N/A

–0.02

–0.33

–0.48

–0.63

–0.78

–0.93

–1.08

–1.23

–1.38

–1.62

–1.61

–1.42

–1.28

–1.14

–1.00

–0.85

–0.71

–0.56

–0.42

–0.18

0.26

1.47

CC

2

DQ4

DQ12

DQ5

1.47

3

1.47

4

1.47

5

DQ13

DQ6

1.47

6

1.47

7

DQ14

DQ7

1.47

8

1.47

9

DQ15/A–1

1.47

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

43

V

1.43

SS

BYTE#

1.17

A16

A15

0.91

–1.39

–1.49

N/A

A14

A13

A12

A11

A10

A9

A8

WE#

RESET#

RY/BY#

Not Connected

A7

N/A

28.00

33.40

39.30

44.70

50.50

55.90

63.30

63.60

54.20

46.60

40.70

34.90

28.90

23.10

17.20

11.40

5.40

–54.80

35.80

45.90

56.00

58.60

57.70

0.71

–1.39

0.91

A6

0.85

A5

1.00

A4

1.14

A3

1.28

A2

1.42

A1

1.61

A0

1.62

CE#

1.62

1.17

V

1.62

1.42

SS

OE#

DQ0

DQ8

DQ1

DQ9

DQ2

DQ10

DQ3

DQ11

1.38

1.49

1.18

1.47

1.03

1.47

0.89

1.47

0.73

1.47

0.59

1.47

0.44

1.47

0.29

1.47

0.14

1.47

4

Am29LV200B Known Good Die

November 18, 2003

S U P P L E M E N T

PAD DESCRIPTION (RELATIVE TO V_CC

)

Pad Center (mils)

Pad Center (millimeters)

Pad

Signal

X

Y

X

Y

1

V

0.00

–12.10

–18.00

–23.90

–29.80

–35.60

–41.50

–47.40

–53.30

–62.70

–62.40

–55.00

–49.60

–43.80

–38.40

–32.50

–27.10

–21.20

–15.70

–6.20

11.10

N/A

0.00

CC

2

DQ4

DQ12

DQ5

0.00

–0.31

–0.46

–0.61

–0.76

–0.90

–1.05

–1.20

–1.35

–1.59

–1.58

–1.40

–1.26

–1.11

–0.98

–0.83

–0.69

–0.54

–0.40

–0.16

0.28

0.00

3

0.00

4

0.00

5

DQ13

DQ6

0.00

6

0.00

7

DQ14

DQ7

0.00

8

0.00

9

DQ15/A–1

0.00

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

43

V

–1.50

–0.04

–0.29

–0.55

–2.86

–2.85

–2.86

–2.95

N/A

SS

BYTE#

–11.60

–21.70

–112.50

–112.30

–112.50

–116.30

N/A

A16

A15

A14

A13

A12

A11

A10

A9

A8

WE#

RESET#

RY/BY#

Not Connected

A7

N/A

28.90

34.30

40.20

45.60

51.40

56.80

64.20

64.50

55.10

47.50

41.60

35.80

29.80

24.00

18.10

12.30

6.30

–112.50

–21.90

–11.80

–1.70

0.73

–2.86

–0.56

–0.30

–0.04

0.02

A6

0.87

A5

1.02

A4

1.16

A3

1.31

A2

1.44

A1

1.63

A0

1.64

CE#

1.64

V

1.64

SS

OE#

DQ0

DQ8

DQ1

DQ9

DQ2

DQ10

DQ3

DQ11

0.90

1.40

0.00

1.21

0.00

1.06

0.00

0.91

0.00

0.76

0.00

0.61

0.00

0.46

0.00

0.31

0.00

0.16

0.00

Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.

November 18, 2003

Am29LV200B Known Good Die

5

S U P P L E M E N T

ORDERING INFORMATION

Standard Products

AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is

formed by a combination of the following:

Am29LV200B

T

-60

DP

C

1

DIE REVISION

This number refers to the specific AMD manufacturing process and

product technology reflected in this document. It is entered in the

revision field of AMD standard product nomenclature.

TEMPERATURE RANGE

C

I

=

Commercial (0°C to +70°C)

Industrial (–40°C to +85°C)

Extended (–55°C to +125°C)

E

PACKAGE TYPE AND

MINIMUM ORDER QUANTITY

DP

DT

DW

=

Waffle Pack, 500 µm thick die

245 die per 5 tray stack

Surftape™ (Tape and Reel), 500 µm thick die

2500 per 7-inch reel

Gel-Pak® Wafer Tray (sawn wafer on frame)

500 µm thick die

Call AMD sales office for minimum order quantity

Surftape™ (Tape and Reel), 280 µm thick die

2500 per 7-inch reel

DR

DF

=

Waffle Pack, 280 µm thick die

245 die per 5 tray stack

SPEED OPTION

See Product Selector Guide and Valid Combinations

BOOT CODE SECTOR ARCHITECTURE

T

B

=

Top sector

Bottom sector

DEVICE NUMBER/DESCRIPTION

Am29LV200B Known Good Die

2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS Flash Memory

3.0 Volt-only Program and Erase

Valid Combinations

Valid Combinations list configurations planned to be sup-

ported in volume for this device. Consult the local AMD sales

office to confirm availability of specific valid combinations and

to check on newly released combinations.

AM29LV200BT-60R

AM29LV200BB-60R

AM29LV200BT-70,

AM29LV200BB-70

DRC, DRI, DFC, DFI

DPC, DPI, DTC,

DTI, DWC, DWI

AM29LV200BT-90,

AM29LV200BB-90

AM29LV200BT-120,

AM29LV200BB-120

AM29LV200BT-70R

AM29LV200BB-70R

DFE, DRE, DPE, DTE

6

Am29LV200B Known Good Die

November 18, 2003

S U P P L E M E N T

PACKAGING INFORMATION

Surftape Packaging

Direction of Feed

Orientation relative to

leading edge of tape

and reel

AMD logo location

Gel-Pak and Waffle Pack Packaging

Orientation relative to

top left corner of

Gel-Pak

and Waffle Pack

cavity plate

AMD logo location

November 18, 2003

Am29LV200B Known Good Die

7

S U P P L E M E N T

PRODUCT TEST FLOW

Figure 1 provides an overview of AMD’s Known Good

Die test flow. For more detailed information, refer to the

Am29LV200B product qualification database. AMD

implements quality assurance procedures throughout

the product test flow. These QA procedures also allow

AMD to produce KGD products without requiring or

implementing burn-in. In addition, an off-line qualifica-

tion maintenance program (QMP) further guarantees

AMD quality standards are met on Known Good Die

products.

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 1

Data Retention

Bake

24 hours at 250°C

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 2

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 3

High Temperature

Speed

Incoming Inspection

Wafer Saw

Die Separation

100% Visual Inspection

Die Pack

Packaging for Shipment

Shipment

Figure 1. AMD KGD Product Test Flow

8

Am29LV200B Known Good Die

November 18, 2003

S U P P L E M E N T

PHYSICAL SPECIFICATIONS

DC OPERATING CONDITIONS

Active Die dimensions .x = 3462.6 µm; y = 3277.8 µm

. . . . . . . . . . . . . . . . . . . x = 136.3 mils; y = 129.0 mils

V

(Supply Voltage) . . . . . . . . . . . . . . 2.7 V to 3.6 V

CC

Operating Temperature

Scribe width . . . . . . . . . . . .x = 87.4 µm; y = 232.2 µm

. . . . . . . . . . . . . . . . . . . . . x = 3.44 mils; y = 9.03 mils

Industrial . . . . . . . . . . . . . . . . . . .–40°C to +85°C

Commercial . . . . . . . . . . . . . . . . . . .0°C to +70°C

Extended . . . . . . . . . . . . . . . . . .–55°C to +125°C

MANUFACTURING INFORMATION

Step dimensions . . . . . . . .x = 3.56 mm; y = 3.51 mm

. . . . . . . . . . . . . . . . . x = 139.76 mils; y = 138.19 mils

Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . . FASL

Test . . . . . . . . . . . . . . . . . . . . . . . . Penang, Malaysia

Die Thickness. . . . . . . . . . . . .500 µm = 483 +/–51 µm

. . . . . . . . . . . . . . . . . . . . . . . 280 µm = 280 +/–15 µm

Bond Pad Size . . . . . . . . . . . . . .115.9 µm x 115.9 µm

. . . . . . . . . . . . . . . . . . . . . . . . . . 4.69 mils x 4.69 mils

Manufacturing ID (Top Boot) . . . . . . . . . . . . .98488AK

(Bottom Boot) . . . . . . . . . . . . . . . . . . . . . . .98488ABK

Minimum pad pitch. . . . . . . . . . . . . . . . . . . . 137.8 µm

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.43mils

Preparation for Shipment . . . . . . . . Penang, Malaysia

Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S

Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Pad Area Free of Passivation . . . . . . . . . . 13.99 mils²

Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43

Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu

. . . . . . . . . . . . . . . . . . . .Minimum thickness: 10500 Å

SPECIAL HANDLING INSTRUCTIONS

Processing

Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,

may be grounded with Back-grind type finish (optional)

Do not expose KGD products to ultraviolet light or

process them at temperatures greater than 250°C.

Failure to adhere to these handling instructions will

result in irreparable damage to the devices. For best

yield, AMD recommends assembly in a Class 10K

clean room with 30% to 60% relative humidity.

Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride

. . . . . . . . . . . . . . . . . . . .Minimum thickness: 14700 Å

Ink dot height . . . . . . . . . . . . . . . . . . . . . .0.8 mils max

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20.3 µm max

Ink dot diameter . . . . . . . . . . . . . . . . . . . . .15 mils min

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 381 µm min

Storage

Store at a maximum temperature of 30°C in a nitrogen-

purged cabinet or vacuum-sealed bag. Observe all

November 18, 2003

Am29LV200B Known Good Die

9

S U P P L E M E N T

WITHOUT LIMITING THE FOREGOING, EXCEPT TO

TERMS AND CONDITIONS OF SALE FOR

AMD NON-VOLATILE MEMORY DIE

THE EXTENT THAT AMD EXPRESSLY WARRANTS

TO BUYER IN A SEPARATE AGREEMENT SIGNED

BY AMD, AMD MAKES NO WARRANTY WITH

RESPECT TO THE DIE’S PROCESSING OF DATE

DATA, AND SHALL HAVE NO LIABILITY FOR

DAMAGES OF ANY KIND, UNDER EQUITY, LAW, OR

ANY OTHER THEORY, DUE TO THE FAILURE OF

SUCH KNOWN GOOD DIE TO PROCESS ANY PAR-

TICULAR DATA CONTAINING DATES, INCLUDING

DATES IN AND AFTER THE YEAR 2000, WHETHER

OR NOT AMD RECEIVED NOTICE OF THE POSSI-

BILITY OF SUCH DAMAGES.

All transactions relating to unpackaged die under this

agreement shall be subject to AMD’s standard terms

and conditions of sale, or any revisions thereof, which

revisions AMD reserves the right to make at any time

and from time to time. In the event of conflict between

the provisions of AMD’s standard terms and conditions

of sale and this agreement, the terms of this agreement

shall be controlling.

AMD warrants unpackaged die of its manufacture

(“Known Good Die” or “Die”) against defective mate-

rials or workmanship for a period of one (1) year from

date of shipment. This warranty does not extend

beyond the first purchaser of said Die. Buyer assumes

full responsibility to ensure compliance with the

appropriate handling, assembly and processing of

Known Good Die (including but not limited to proper

Die preparation, Die attach, wire bonding and related

assembly and test activities), and compliance with all

guidelines set forth in AMD’s specifications for Known

Good Die, and AMD assumes no responsibility for envi-

ronmental effects on Known Good Die or for any

activity of Buyer or a third party that damages the Die

due to improper use, abuse, negligence, improper

installation, accident, loss, damage in transit, or unau-

thorized repair or alteration by a person or entity other

than AMD (“Warranty Exclusions”).

THIS WARRANTY IS EXPRESSED IN LIEU OF ALL

OTHER WARRANTIES, EXPRESSED OR IMPLIED,

INCLUDING THE IMPLIED WARRANTY OF FITNESS

FOR A PARTICULAR PURPOSE, THE IMPLIED

WARRANTY OF MERCHANTABILITY AND OF ALL

OTHER OBLIGATIONS OR LIABILITIES ON AMD’s

PART, AND IT NEITHER ASSUMES NOR AUTHO-

RIZES ANY OTHER PERSON TO ASSUME FOR

AMD ANY OTHER LIABILITIES. THE FOREGOING

CONSTITUTES THE BUYER’S SOLE AND EXCLU-

SIVE REMEDY FOR THE FURNISHING OF DEFEC-

TIVE OR NON CONFORMING KNOWN GOOD DIE

AND AMD SHALL NOT IN ANY EVENT BE LIABLE

FOR INCREASED MANUFACTURING COSTS,

DOWNTIME COSTS, DAMAGES RELATING TO

BUYER’S PROCUREMENT OF SUBSTITUTE DIE

(i.e., “COST OF COVER”), LOSS OF PROFITS, REV-

ENUES OR GOODWILL, LOSS OF USE OF OR

DAMAGE TO ANY ASSOCIATED EQUIPMENT,

OR ANY OTHER INDIRECT, INCIDENTAL, SPECIAL

OR CONSEQUENTIAL DAMAGES BY REASON OF

THE FACT THAT SUCH KNOWN GOOD DIE SHALL

HAVE BEEN DETERMINED TO BE DEFECTIVE OR

NON CONFORMING.

The liability of AMD under this warranty is limited, at

AMD’s option, solely to repair the Die, to send replace-

ment Die, or to make an appropriate credit adjustment

or refund in an amount not to exceed the original pur-

chase price actually paid for the Die returned to AMD,

provided that: (a) AMD is promptly notified by Buyer in

writing during the applicable warranty period of any

defect or nonconformity in the Known Good Die; (b)

Buyer obtains authorization from AMD to return the

defective Die; (c) the defective Die is returned to AMD

by Buyer in accordance with AMD’s shipping instruc-

tions set forth below; and (d) Buyer shows to AMD’s

satisfaction that such alleged defect or nonconformity

actually exists and was not caused by any of the above-

referenced Warranty Exclusions. Buyer shall ship such

defective Die to AMD via AMD’s carrier, collect. Risk of

loss will transfer to AMD when the defective Die is pro-

vided to AMD’s carrier. If Buyer fails to adhere to these

warranty returns guidelines, Buyer shall assume all risk

of loss and shall pay for all freight to AMD’s specified

location. The aforementioned provisions do not extend

the original warranty period of any Known Good Die

that has either been repaired or replaced by AMD.

Buyer agrees that it will make no warranty representa-

tions to its customers which exceed those given by

AMD to Buyer unless and until Buyer shall agree to

indemnify AMD in writing for any claims which exceed

AMD’s warranty.

Known Good Die are not designed or authorized for

use as components in life support appliances, devices

or systems where malfunction of the Die can reason-

ably be expected to result in a personal injury. Buyer’s

use of Known Good Die for use in life support applica-

tions is at Buyer’s own risk and Buyer agrees to fully

indemnify AMD for any damages resulting in such use

or sale.

10

Am29LV200B Known Good Die

November 18, 2003

S U P P L E M E N T

REVISION SUMMARY

Revision A (February 4, 2002)

Initial release.

Ordering Information

Removed extended temperature range.

Packaging Information

Revision A+1 (December 9, 2002)

Global

Added gelpack and waffle pack photo to section.

Revision A+2 (November 18, 2003)

Added the 60R, 70, 90, and 120 speeds.

Global

Valid Combinations

Added Extended Temperature and 280 um die thick-

ness shipping option.

Added package types to table.

Trademarks

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

November 18, 2003

Am29LV200B Known Good Die

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型号：	AM29LV200BT30DWE1
厂家：	AMD
描述：	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位（ 256千×8位/ 128的K× 16位） CMOS 3.0伏只，引导扇区闪存，模具修改过程1 闪存
文件：	总11页 (文件大小：297K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AM29LV200BT30DWE1 [AMD]

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