AM29F016D_02 [AMD]
16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1; 16兆位（2M ×8位） CMOS 5.0伏只，扇区擦除闪存裸片修订版1
| 型号： | AM29F016D_02 |
| 厂家： | 
AMD |
| 描述： | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| 文件： | 总12页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Am29F016D
Known Good Die
Data Sheet
-XO\ꢀꢁꢂꢂꢃ
7KHꢀIROORZLQJꢀGRFXPHQWꢀVSHFLILHVꢀ6SDQVLRQꢀPHPRU\ꢀSURGXFWVꢀWKDWꢀDUHꢀQRZꢀRIIHUHGꢀE\ꢀERWKꢀ$GYDQFHG
0LFURꢀ'HYLFHVꢀDQGꢀ)XMLWVXꢄꢀ$OWKRXJKꢀWKHꢀGRFXPHQWꢀLVꢀPDUNHGꢀZLWKꢀWKHꢀQDPHꢀRIꢀWKHꢀFRPSDQ\ꢀWKDWꢀRULJꢅ
LQDOO\ꢀGHYHORSHGꢀWKHꢀVSHFLILFDWLRQꢆꢀWKHVHꢀSURGXFWVꢀZLOOꢀEHꢀRIIHUHGꢀWRꢀFXVWRPHUVꢀRIꢀERWKꢀ$0'ꢀDQG
)XMLWVXꢄ
Continuity of Specifications
7KHUHꢀLVꢀQRꢀFKDQJHꢀWRꢀWKLVꢀGDWDVKHHWꢀDVꢀDꢀUHVXOWꢀRIꢀRIIHULQJꢀWKHꢀGHYLFHꢀDVꢀDꢀ6SDQVLRQꢀSURGXFWꢄꢀꢀ$Q\
FKDQJHVꢀWKDWꢀKDYHꢀEHHQꢀPDGHꢀDUHꢀWKHꢀUHVXOWꢀRIꢀQRUPDOꢀGDWDVKHHWꢀLPSURYHPHQWꢀDQGꢀDUHꢀQRWHGꢀLQꢀWKH
GRFXPHQWꢀUHYLVLRQꢀVXPPDU\ꢆꢀZKHUHꢀVXSSRUWHGꢄꢀꢀ)XWXUHꢀURXWLQHꢀUHYLVLRQVꢀZLOOꢀRFFXUꢀZKHQꢀDSSURSULDWHꢆ
DQGꢀFKDQJHVꢀZLOOꢀEHꢀQRWHGꢀLQꢀDꢀUHYLVLRQꢀVXPPDU\ꢄ
Continuity of Ordering Part Numbers
$0'ꢀDQGꢀ)XMLWVXꢀFRQWLQXHꢀWRꢀVXSSRUWꢀH[LVWLQJꢀSDUWꢀQXPEHUVꢀEHJLQQLQJꢀZLWKꢀꢇ$PꢇꢀDQGꢀꢇ0%0ꢇꢄꢀ7RꢀRUGHU
WKHVHꢀSURGXFWVꢆꢀSOHDVHꢀXVHꢀRQO\ꢀWKHꢀ2UGHULQJꢀ3DUWꢀ1XPEHUVꢀOLVWHGꢀLQꢀWKLVꢀGRFXPHQWꢄ
For More Information
3OHDVHꢀFRQWDFWꢀ\RXUꢀORFDOꢀ$0'ꢀRUꢀ)XMLWVXꢀVDOHVꢀRIILFHꢀIRUꢀDGGLWLRQDOꢀLQIRUPDWLRQꢀDERXWꢀ6SDQVLRQ
PHPRU\ꢀVROXWLRQVꢄ
SUPPLEMENT
Am29F016D Known Good Die
16 Megabit (2 M x 8-Bit)
CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10%, single power supply operation
■ Minimum 1 million erase cycles guaranteed
■ Compatible with JEDEC standards
— Minimizes system level power requirements
— Pinout and software compatible with
single-power-supply Flash standard
■ Manufactured on 0.23 µm process technology
■ High performance
— Superior inadvertent write protection
— 120 ns access time
■ Data# Polling and toggle bits
■ Low power consumption
— Provides a software method of detecting program
or erase cycle completion
— 25 mA typical active read current
— 30 mA typical program/erase current
■ Ready/Busy output (RY/BY#)
— <1 µA typical standby current (standard access
time to active mode)
— Provides a hardware method for detecting
program or erase cycle completion
■ Flexible sector architecture
— 32 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased.
— Supports full chip erase
■ Erase Suspend/Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
— Group sector protection:
■ Hardware reset pin (RESET#)
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
— Resets internal state machine to the read mode
■ Tested to datasheet specifications at
temperature
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
■ Quality and reliability levels equivalent to
■ Embedded Algorithms
standard packaged components
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
■ 20-year data retention at 125°C
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
Publication# 26244 Rev: A Amendment/+1
Issue Date: June 11, 2002
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29F016D in Known Good Die (KGD) form is a 16
Mbit, 5.0 volt-only Flash memory. AMD defines KGD as
standard product in die form, tested for functionality and
speed. AMD KGD products have the same reliability and
quality as AMD products in packaged form.
The sector erase architecture allows memory sectors to
be erased and reprogrammed without affecting the data
contents of other sectors. A sector is typically erased
and verified within one second. The device is erased
when shipped from the factory.
The hardware sector group protection feature disables
both program and erase operations in any combination
of the eight sector groups of memory. A sector group
consists of four adjacent sectors.
Am29F016D Features
The Am29F016D is a 16 Mbit, 5.0 volt-only Flash
memory organized as 2,097,152 bytes of 8 bits each.
The 2 Mbytes of data are divided into 32 sectors of 64
Kbytes each for flexible erase capability. The 8 bits of
data appear on DQ0–DQ7. The Am29F016D is
manufactured using AMD’s 0.32 µm process tech-
nology. This device is designed to be programmed
in-system with the standard system 5.0 volt VCC supply.
A 12.0 volt VPP is not required for program or erase
operations. The device can also be programmed in
standard EPROM programmers.
The Erase Suspend feature enables the system to put
erase on hold for any period of time to read data from, or
program data to, a sector that is not being erased. True
background erase can thus be achieved.
The device requires only a single 5.0 volt power supply
for both read and write functions. Internally generated
and regulated voltages are provided for the program and
erase operations. A low VCC detector automatically
inhibits write operations during power transitions. The
host system can detect whether a program or erase
cycle is complete by using the RY/BY# pin, the DQ7
(Data# Polling) or DQ6 (toggle) status bits. After a
program or erase cycle has been completed, the device
automatically returns to the read mode.
The standard device offers an access time of 120 ns,
allowing high-speed microprocessors to operate without
wait states. To eliminate bus contention, the device has
separate chip enable (CE#), write enable (WE#), and
output enable (OE#) controls.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using stan-
dard microprocessor write timings. Register contents
serve as input to an internal state machine that controls
the erase and programming circuitry. Write cycles also
internally latch addresses and data needed for the pro-
gramming and erase operations. Reading data out of
the device is similar to reading from 12.0 volt Flash or
EPROM devices.
A hardware RESET# pin terminates any operation in
progress. The internal state machine is reset to the read
mode. The RESET# pin may be tied to the system reset
circuitry. Therefore, if a system reset occurs during
either an Embedded Program or Embedded Erase algo-
rithm, the device is automatically reset to the read mode.
This enables the system’s microprocessor to read the
boot-up firmware from the Flash memory.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability, and cost
effectiveness. The device electrically erases all bits
within a sector simultaneously via Fowler-Nordheim tun-
neling. The bytes are programmed one byte at a time
using the EPROM programming mechanism of hot elec-
tron injection.
The device is programmed by executing the program
command sequence. This invokes the Embedded
Program algorithm—an internal algorithm that automat-
ically times the program pulse widths and verifies proper
cell margin. The device is erased by executing the erase
command sequence. This invokes the Embedded Erase
algorithm—an internal algorithm that automatically pre-
programs the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
Electrical Specifications
Refer to the Am29F016D data sheet, publication
number 21444, for full electrical specifications on the
Am29F016D in KGD form.
PRODUCT SELECTOR GUIDE
Family Part Number
Am29F016D KGD
Speed Option (V
= 5.0 V ± 10%)
-120
120
120
50
CC
Max Access Time, tACC (ns)
Max CE# Access, tCE (ns)
Max OE# Access, tOE (ns)
2
Am29F016D Known Good Die
June 11, 2002
S U P P L E M E N T
DIE PHOTOGRAPH
DIE PAD LOCATIONS
10
2
1 38
30
AMD logo location
11
21
22
29
June 11, 2002
Am29F016D Known Good Die
3
S U P P L E M E N T
PAD DESCRIPTION (RELATIVE TO DIE CENTER)
Pad Center (mils)
Pad Center (millimeters)
Pad
Signal
X
Y
X
Y
1
VCC
RESET#
A11
A10
A9
31.30
–32.75
–42.74
–48.89
–55.27
–61.10
–67.48
–73.63
–80.01
–86.16
–85.72
–79.88
–74.42
–68.59
–58.60
–47.60
–34.33
–23.34
–14.38
–8.96
90.86
0.80
2.31
2
94.54
90.77
–0.83
–1.09
–1.24
–1.40
–1.55
–1.71
–1.87
–2.03
–2.19
–2.18
–2.03
–1.89
–1.74
–1.49
–1.21
–0.87
–0.59
–0.37
–0.23
–0.09
0.41
2.40
3
2.31
4
90.77
2.31
5
90.77
2.31
6
A8
90.77
2.31
7
A7
90.77
2.31
8
A6
90.77
2.31
9
A5
90.77
2.31
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
A4
90.77
2.31
A3
–90.77
–90.77
–90.77
–90.77
–95.09
–95.09
–95.09
–95.09
–94.83
–94.83
–95.03
–95.09
–95.09
–95.09
–95.09
–90.77
–90.77
–90.77
–90.77
90.77
–2.31
–2.31
–2.31
–2.31
–2.42
–2.42
–2.42
–2.42
–2.41
–2.41
–2.41
–2.42
–2.42
–2.42
–2.42
–2.31
–2.31
–2.31
–2.31
2.31
A2
A1
A0
DQ0
DQ1
DQ2
DQ3
VSS
VSS
VCC
DQ4
DQ5
DQ6
DQ7
RY/BY#
OE#
WE#
A20
A19
A18
A17
A16
A15
A14
A13
A12
CE#
–3.54
16.33
27.32
0.69
40.59
1.03
51.59
1.31
62.06
1.58
72.14
1.83
79.49
2.02
85.87
2.18
82.54
2.10
76.71
90.77
1.95
2.31
71.25
90.77
1.81
2.31
65.41
90.77
1.66
2.31
59.95
90.77
1.52
2.31
54.12
90.77
1.37
2.31
48.66
90.77
1.24
2.31
42.82
90.77
1.09
2.31
37.36
90.77
0.95
2.31
Note: The coordinates above are relative to the die center and can be used to operate wire bonding equipment.
4
Am29F016D Known Good Die
June 11, 2002
S U P P L E M E N T
PAD DESCRIPTION (RELATIVE TO VCC
)
Pad Center (mils)
Pad Center (millimeters)
Pad
Signal
X
Y
X
Y
1
VCC
RESET#
A11
A10
A9
0.00
–64.05
–74.04
–80.19
–86.57
–92.41
–98.79
–104.94
–111.32
–117.47
–117.02
–111.19
–105.73
–99.89
–89.90
–78.91
–65.64
–54.64
–45.69
–40.26
–34.84
–14.98
–3.98
0.00
0.00
0.00
2
3.68
–1.63
–1.88
–2.04
–2.20
–2.35
–2.51
–2.67
–2.83
–2.98
–2.97
–2.82
–2.69
–2.54
–2.28
–2.00
–1.67
–1.39
–1.16
–1.02
–0.88
–0.38
–0.10
0.24
0.09
3
–0.09
0.00
4
–0.09
0.00
5
–0.09
0.00
6
A8
–0.09
0.00
7
A7
–0.09
0.00
8
A6
–0.09
0.00
9
A5
–0.09
0.00
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
A4
–0.09
0.00
A3
–181.63
–181.63
–181.63
–181.63
–185.96
–185.96
–185.96
–185.96
–185.69
–185.69
–185.89
–185.96
–185.96
–185.96
–185.96
–181.63
–181.63
–181.63
–181.63
–0.09
–4.61
–4.61
–4.61
–4.61
–4.72
–4.72
–4.72
–4.72
–4.72
–4.72
–4.72
–4.72
–4.72
–4.72
–4.72
–4.61
–4.61
–4.61
–4.61
0.00
A2
A1
A0
DQ0
DQ1
DQ2
DQ3
VSS
VSS
VCC
DQ4
DQ5
DQ6
DQ7
RY/BY#
OE#
WE#
A20
A19
A18
A17
A16
A15
A14
A13
A12
CE#
9.29
20.28
0.52
30.75
0.78
40.84
1.04
48.19
1.22
54.57
1.39
51.24
1.30
45.41
–0.09
1.15
0.00
39.94
–0.09
1.01
0.00
34.11
–0.09
0.87
0.00
28.65
–0.09
0.73
0.00
22.81
–0.09
0.58
0.00
17.35
–0.09
0.44
0.00
11.52
–0.09
0.29
0.00
6.06
–0.09
0.15
0.00
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
June 11, 2002
Am29F016D Known Good Die
5
S U P P L E M E N T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Am29F016D
-120
DP
C
1
DIE REVISION
This number refers to the specific AMD manufacturing process and
product technology reflected in this document. It is entered in the
revision field of AMD standard product nomenclature.
TEMPERATURE RANGE
C
I
=
=
Commercial (0°C to +70°C)
Industrial (–40°C to +85°C)
PACKAGE TYPE AND MINIMUM ORDER QUANTITY
DP
DG
DT
=
=
=
Waffle Pack
180 die per 5 tray stack
Gel-Pak® Die Tray
432 die per 6 tray stack
Surftape™ (Tape and Reel)
2500 per 7-inch reel
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am29F016D Known Good Die
16 Megabit (2 M x 8-Bit) CMOS Flash Memory—Die Revision 1
5.0 Volt-only Program and Erase
Valid Combinations
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
DPC 1, DPI 1,
DGC 1, DGI 1,
DTC 1, DTI 1,
DWC 1, DWI 1
AM29F016D-120
6
Am29F016D Known Good Die
June 11, 2002
S U P P L E M E N T
PACKAGING INFORMATION
Surftape Packaging
Direction of Feed
Orientation relative to
leading edge of tape
and reel
AMD logo location
Gel-Pak and Waffle Pack Packaging
Orientation relative to
top left corner of
Gel-Pak
and Waffle Pack
cavity plate
AMD logo location
June 11, 2002
Am29F016D Known Good Die
7
S U P P L E M E N T
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29F016D product qualification database supple-
ment for KGD. AMD implements quality assurance pro-
cedures throughout the product test flow. In addition,
an off-line quality monitoring program (QMP) further
guarantees AMD quality standards are met on Known
Good Die products. These QA procedures also allow
AMD to produce KGD products without requiring or
implementing burn-in.
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 1
Data Retention
Bake
24 hours at 250°C
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 2
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 3
High Temperature
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
Packaging for Shipment
Shipment
Figure 1. AMD KGD Product Test Flow
8
Am29F016D Known Good Die
June 11, 2002
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
MANUFACTURING INFORMATION
Die Dimensions, X x Y . . . . 186.61 mils x 208.66 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . .4.74 mm x 5.30 mm
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL
Wafer Sort Test . . . . . . . . . . . . . . . . . . Sunnyvale,CA
. . . . . . . . . . . . . . . . . . . . . . . . and Penang, Malaysia
Die Thickness . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .500 µm
Manufacturing ID . . . . . . . . . . . . . . . . . . . . . 98J32AK
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . CS49HS
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Bond Pad Size . . . . . . . . . . . . . . 3.52 mils x 3.52 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . . .89.3 µm x 89.3 µm
Pad Area Free of Passivation . . . . . . . . . .15.52 mils2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000 µm2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .38
Bond Pad Metalization . . . . . . . . . . . . . . . . . . Al/Cu/Si
SPECIAL HANDLING INSTRUCTIONS
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
VCC (Supply Voltage) . . . . . . . . . . . . . . .4.5 V to 5.5 V
Junction Temperature Under Bias . .TJ (max) = 130°C
Storage
Operating Temperature
Store at a maximum temperature of 30°C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C
June 11, 2002
Am29F016D Known Good Die
9
S U P P L E M E N T
RESPECT TO THE DIE’S PROCESSING OF DATE
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
DATA, AND SHALL HAVE NO LIABILITY FOR
DAMAGES OF ANY KIND, UNDER EQUITY, LAW, OR
ANY OTHER THEORY, DUE TO THE FAILURE OF
SUCH KNOWN GOOD DIE TO PROCESS ANY PAR-
TICULAR DATA CONTAINING DATES, INCLUDING
DATES IN AND AFTER THE YEAR 2000, WHETHER
OR NOT AMD RECEIVED NOTICE OF THE POSSI-
BILITY OF SUCH DAMAGES.
All transactions relating to unpackaged die under this
agreement shall be subject to AMD’s standard terms
and conditions of sale, or any revisions thereof, which
revisions AMD reserves the right to make at any time
and from time to time. In the event of conflict between
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’s
PART, AND IT NEITHER ASSUMES NOR AUTHO-
RIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYER’S SOLE AND EXCLU-
SIVE REMEDY FOR THE FURNISHING OF DEFEC-
TIVE OR NON CONFORMING KNOWN GOOD DIE
AND AMD SHALL NOT IN ANY EVENT BE LIABLE
FOR INCREASED MANUFACTURING COSTS,
DOWNTIME COSTS, DAMAGES RELATING TO
BUYER’S PROCUREMENT OF SUBSTITUTE DIE
(i.e., “COST OF COVER”), LOSS OF PROFITS, REV-
ENUES OR GOODWILL, LOSS OF USE OF OR
DAMAGE TO ANY ASSOCIATED EQUIPMENT, OR
ANY OTHER INDIRECT, INCIDENTAL, SPECIAL
OR CONSEQUENTIAL DAMAGES BY REASON OF
THE FACT THAT SUCH KNOWN GOOD DIE SHALL
HAVE BEEN DETERMINED TO BE DEFECTIVE OR
NON CONFORMING.
AMD warrants unpackaged die of its manufacture
(“Known Good Die” or “Die”) against defective mate-
rials or workmanship for a period of one (1) year from
date of shipment. This warranty does not extend
beyond the first purchaser of said Die. Buyer assumes
full responsibility to ensure compliance with the
appropriate handling, assembly and processing of
Known Good Die (including but not limited to proper
Die preparation, Die attach, wire bonding and related
assembly and test activities), and compliance with all
guidelines set forth in AMD’s specifications for Known
Good Die, and AMD assumes no responsibility for
environmental effects on Known Good Die or for any
activity of Buyer or a third party that damages the Die
due to improper use, abuse, negligence, improper
installation, accident, loss, damage in transit, or unau-
thorized repair or alteration by a person or entity other
than AMD (“Warranty Exclusions”).
The liability of AMD under this warranty is limited, at
AMD’s option, solely to repair the Die, to send replace-
ment Die, or to make an appropriate credit adjustment
or refund in an amount not to exceed the original pur-
chase price actually paid for the Die returned to AMD,
provided that: (a) AMD is promptly notified by Buyer in
writing during the applicable warranty period of any
defect or nonconformity in the Known Good Die; (b)
Buyer obtains authorization from AMD to return the
defective Die; (c) the defective Die is returned to AMD
by Buyer in accordance with AMD’s shipping instruc-
tions set forth below; and (d) Buyer shows to AMD’s
satisfaction that such alleged defect or nonconformity
actually exists and was not caused by any of the
above-referenced Warranty Exclusions. Buyer shall
ship such defective Die to AMD via AMD’s carrier, col-
lect. Risk of loss will transfer to AMD when the defec-
tive Die is provided to AMD’s carrier. If Buyer fails to
adhere to these warranty returns guidelines, Buyer
shall assume all risk of loss and shall pay for all freight
to AMD’s specified location. The aforementioned pro-
visions do not extend the original warranty period of
any Known Good Die that has either been repaired or
replaced by AMD.
Buyer agrees that it will make no warranty representa-
tions to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in writing for any claims which exceed
AMD’s warranty.
Known Good Die are not designed or authorized for
use as components in life support appliances, devices
or systems where malfunction of the Die can reason-
ably be expected to result in a personal injury. Buyer’s
use of Known Good Die for use in life support applica-
tions is at Buyer’s own risk and Buyer agrees to fully
indemnify AMD for any damages resulting in such use
or sale.
WITHOUT LIMITING THE FOREGOING, EXCEPT TO
THE EXTENT THAT AMD EXPRESSLY WARRANTS
TO BUYER IN A SEPARATE AGREEMENT SIGNED
BY AMD, AMD MAKES NO WARRANTY WITH
10
Am29F016D Known Good Die
June 11, 2002
S U P P L E M E N T
REVISION SUMMARY
Revision A (April 12, 2002)
Initial release.
Revision A+1 (June 11, 2002)
Ordering Information
Deleted Gel Pak wafer tray from packaging type
options.
Manufacturing Information
Corrected manufacturing ID. Added Sunnyvale, CA to
wafer sort test locations.
Trademarks
Copyright © 2002 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
June 11, 2002
Am29F016D Known Good Die
11
相关型号：
©2020 ICPDF网 联系我们和版权申明