AS7C4096A-20TCN [ALSC]

5.0V 512K x 8 CMOS SRAM; 5.0V 512K ×8 CMOS SRAM
AS7C4096A-20TCN
型号: AS7C4096A-20TCN
厂家: ALLIANCE SEMICONDUCTOR CORPORATION    ALLIANCE SEMICONDUCTOR CORPORATION
描述:

5.0V 512K x 8 CMOS SRAM
5.0V 512K ×8 CMOS SRAM

存储 内存集成电路 静态存储器 光电二极管 ISM频段
文件: 总10页 (文件大小:325K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
May 2005  
Preliminary  
AS7C4096A  
®
5.0V 512K × 8 CMOS SRAM  
• Equal access and cycle times  
Features  
• Easy memory expansion with CE  
• TTL-compatible, three-state I/O  
• JEDEC standard packages  
- 400 mil 36-pin SOJ  
- 44-pin TSOP 2  
• ESD protection 2000 volts  
• Latch-up current 200 mA  
, OE inputs  
• Pin compatible to AS7C4096  
• Industrial and commercial temperature  
• Organization: 524,288 words × 8 bits  
• Center power and ground pins  
• High speed  
- 10/12/15/20 ns address access time  
- 5/6 ns output enable access time  
• Low power consumption: ACTIVE  
- 880mW/max @ 10 ns  
• Low power consumption: STANDBY  
- 55mW/max CMOS  
Logic block diagram  
Pin arrangements  
36-pin SOJ (400 mil)  
44-pin TSOP 2  
VCC  
NC  
NC  
A0  
A1  
A2  
A3  
A4  
CE  
NC  
NC  
NC  
A18  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A0  
A1  
A2  
A3  
A4  
CE  
1
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
NC  
2
GND  
2
A18  
A17  
3
3
4
Input buffer  
4
A16  
A15  
OE  
A17  
A16  
A15  
OE  
5
5
6
6
7
A0  
A1  
A2  
I/O1  
I/O2  
7
I/O8  
I/O7  
GND  
VCC  
8
8
I/O1  
I/O2  
VCC  
I/O8  
I/O7  
9
I/O1  
I/O8  
VCC  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
GND  
I/O3  
I/O4  
WE  
A5  
10  
11  
12  
13  
14  
15  
16  
17  
18  
524,288 × 8  
A3  
GND  
I/O6  
I/O5  
A14  
A13  
A12  
A11  
A10  
NC  
VCC  
GND  
I/O3  
I/O4  
WE  
A5  
A4  
Array  
(4,194,304)  
I/O6  
I/O5  
A14  
A13  
A12  
A11  
A10  
NC  
A5  
A6  
A7  
A8  
A9  
A6  
A7  
A6  
A8  
A7  
A9  
A8  
A9  
NC  
NC  
NC  
NC  
Column decoder  
WE  
OE  
CE  
Control  
Circuit  
Selection guide  
–10  
–12  
12  
–15  
–20  
Unit  
ns  
Maximum address access time  
Maximum outputenable access time  
Maximum operating current  
10  
5
15  
6
20  
6
6
ns  
160  
10  
140  
10  
120  
10  
100  
10  
mA  
mA  
Maximum CMOS standby current  
5/27/05, v. 1.1  
Alliance Semiconductor  
P. 1 of 10  
Copyright © Alliance Semiconductor. All rights reserved.  
AS7C4096A  
®
Functional description  
The AS7C4096A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as  
524,288 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are  
desired.  
Equal address access and cycle times (t , t , t ) of 10/12/15/20 ns with output enable access times (t ) of 5/6 ns are ideal  
AA RC WC  
OE  
for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory  
systems.  
When CE is high the device enters standby mode. The device is guaranteed not to exceed 55mW power consumption in CMOS  
standby mode.  
A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1–I/O8 is written  
on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins  
only after outputs have been disabled with output enable (OE) or write enable (WE).  
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip  
drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write  
enable is active, output drivers stay in high-impedance mode.  
All chip inputs and outputs are TTL-compatible, and operation is from a single 5.0V supply voltage. This device is available as  
per industry standard 400-mil 36-pin SOJ and 44-pin TSOP 2 packages.  
Absolute maximum ratings  
Parameter  
Symbol  
Min  
–0.5  
–0.5  
Max  
Unit  
V
Voltage on V relative to GND  
V
V
+7.0  
CC  
t1  
t2  
D
Voltage on any pin relative to GND  
Power dissipation  
V
+0.5  
V
CC  
P
T
1.0  
W
Storage temperature (plastic)  
–65  
–55  
+150  
+125  
20  
°C  
°C  
mA  
stg  
Temperature with V applied  
T
CC  
bias  
DC current into output (low)  
I
OUT  
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and func-  
tional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to  
absolute maximum rating conditions for extended periods may affect reliability.  
Truth table  
CE  
WE  
OE  
Data  
Mode  
Standby (I , I  
)
H
X
X
High Z  
SB SB1  
Output disable (I  
)
L
L
L
H
H
L
H
L
High Z  
CC  
D
Read (I  
)
OUT  
CC  
D
Write (I  
)
CC  
X
IN  
5/27/05, v. 1.1  
Alliance Semiconductor  
P. 2 of 10  
AS7C4096A  
®
Recommended operating condition  
Parameter  
Symbol  
Min  
4.5  
2.2  
–0.5  
0
Nominal  
Max  
Unit  
V
Supply voltage  
V
(10/12/15/20)  
5.0  
5.5  
CC  
*
V
V
+ 0.5  
CC  
V
IH  
Input voltage  
**  
V
0.8  
70  
85  
V
IL  
commercial  
industrial  
T
°C  
°C  
Ambient operating  
temperature  
A
T
–40  
A
*
VIH max = VCC + 1.5V for pulse width less than 5 nS.  
**  
VIL min = –1.0V for pulse width less than 5 nS.  
.
DC operating characteristics (over the operating range)1  
–10  
–12  
–15  
–20  
Parameter  
Symbol  
Test conditions  
= Max, V = GND to V  
CC  
Min Max Min Max Min Max Min Max Unit Notes  
Input leakage  
current  
|I |  
1
1
1
1
1
1
1
1
µA  
µA  
LI  
V
CC  
IN  
Output leakage  
current  
V
= Max, CE = V  
CC  
IH  
|I  
I
|
LO  
CC  
V
= GND to V  
OUT  
CC  
Operating power  
supply current  
V
= Max, CE < V  
CC  
IL  
160  
60  
140  
55  
120  
50  
100 mA  
40 mA  
f = f , I  
= 0mA  
Max OUT  
V
= Max, CE > V  
IH  
CC  
I
SB  
f = f , I  
= 0mA  
Max OUT  
Standby power  
supply current  
V
= Max,  
CC  
CE V – 0.2V,  
0.2V or V V – 0.2V,  
CC  
I
10  
10  
10  
10 mA  
SB1  
V
IN  
IN  
CC  
f = 0  
0.4  
0.5  
0.4  
0.5  
0.4  
0.5  
0.4  
V
I
I
= 6 mA, V = Min  
CC  
OL  
OL  
V
V
4
4
OL  
Output voltage  
0.5  
= 8 mA, V = Min  
CC  
2.4  
2.4  
2.4  
2.4  
V
I
= –4 mA, V = Min  
OH  
OH  
CC  
Capacitance (f = 1MHz, T = 25° C, V = NOMINAL)4  
a
CC  
Parameter  
Input capacitance  
I/O capacitance  
Symbol  
Signals  
Test conditions  
= 0V  
Max  
Unit  
C
V
5
pF  
pF  
A, CE, WE, OE  
I/O  
IN  
IN  
C
V
= V = 0V  
OUT  
7
I/O  
IN  
5/27/05, v. 1.1  
Alliance Semiconductor  
P. 3 of 10  
AS7C4096A  
®
Read cycle (over the operating range)2,8  
–10  
–12  
–15  
–20  
Parameter  
Read cycle time  
Symbol Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max Unit Notes  
t
t
10  
3
3
0
0
12  
15  
20  
20  
20  
6
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
RC  
10  
10  
5
3
3
0
0
12  
12  
6
3
3
0
0
15  
15  
6
3
3
0
0
2
2
Address access time  
AA  
t
Chip enable (CE) access time  
Output enable (OE) access time  
Output hold from address change  
CE Low to output in low Z  
CE High to output in high Z  
OE Low to output in low Z  
OE High to output in high Z  
Power up time  
ACE  
t
OE  
t
4
OH  
t
3,4  
3,4  
3,4  
3,4  
3,4  
3,4  
CLZ  
t
5
6
7
9
CHZ  
t
OLZ  
OHZ  
t
5
6
7
9
t
PU  
t
10  
12  
15  
20  
Power down time  
PD  
Key to switching waveforms  
Rising input  
Falling input  
Undefined/don’t care  
Read waveform 1 (address controlled)2,5,6,8  
tRC  
Address  
tAA  
tOH  
DOUT  
Data valid  
Read waveform 2 (CE, OE controlled)2,5,7,8  
tRC1  
CE  
tOE  
OE  
tOLZ  
tOHZ  
tCHZ  
tACE  
DOUT  
Data valid  
tCLZ  
tPD  
50%  
ICC  
ISB  
tPU  
Supply  
current  
50%  
5/27/05, v. 1.1  
Alliance Semiconductor  
P. 4 of 10  
AS7C4096A  
®
Write cycle (over the operating range)9  
–10  
–12  
–15  
–20  
Parameter  
Write cycle time  
Symbol Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max Unit Notes  
t
t
t
10  
7
12  
15  
20  
9
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
WC  
CW  
AW  
5
8
8
6
10  
10  
0
7
12  
12  
0
Chip enable (CE) to write end  
Address setup to write end  
Address setup time  
7
t
0
0
AS  
t
t
7
8
10  
15  
0
12  
20  
0
Write pulse width (OE = high)  
Write pulse width (OE = low  
Address hold from end of write  
Write recovery time  
WP1  
WP2  
10  
0
12  
0
t
t
AH  
0
0
0
0
WR  
DW  
t
5
6
7
9
Data valid to write end  
t
0
0
0
0
3,4  
3,4  
3,4  
Data hold time  
DH  
t
t
2
2
2
2
Write enable to output in high Z  
Output active from write end  
WZ  
3
3
3
3
OW  
Write waveform 1 (WE controlled)9  
tWC  
tWR  
tAH  
tAW  
Address  
tWP  
WE  
tAS  
tDW  
Data valid  
tDH  
DIN  
tWZ  
tOW  
DOUT  
5/27/05, v. 1.1  
Alliance Semiconductor  
P. 5 of 10  
AS7C4096A  
®
Write waveform 2 (CE controlled)9  
tWC  
tWR  
tAH  
tAW  
Address  
tAS  
tCW  
CE  
tWP  
WE  
DIN  
tDW  
Data valid  
tDH  
AC test conditions  
- Output load: see Figure B.  
- Input pulse level: GND to V - 0.5V. See Figures A and B.  
CC  
- Input rise and fall times: 2 ns. See Figure A.  
- Input and output timing reference levels: 1.5V.  
+5.0V  
Thevenin equivalent:  
168  
480  
V
- 0.5V  
GND  
DOUT  
255  
CC  
90%  
10%  
90%  
10%  
+1.728V  
DOUT  
C10  
2 ns  
Figure A: Input pulse  
GND  
Figure B: 5.0V Output load  
Notes  
1
2
3
4
5
6
7
8
9
During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.  
For test conditions, see AC Test Conditions.  
tCLZ and tCHZ are specified with CL = 5pF as in Figure B. Transition is measured ±500 mV from steady-state voltage.  
This parameter is guaranteed, but not tested.  
WE is HIGH for read cycle.  
CE and OE are LOW for read cycle.  
Address valid prior to or coincident with CE transition Low.  
All read cycle timings are referenced from the last valid address to the first transitioning address.  
All write cycle timings are referenced from the last valid address to the first transitioning address.  
10 C = 30pF, except at high Z and low Z parameters, where C = 5pF.  
5/27/05, v. 1.1  
Alliance Semiconductor  
P. 6 of 10  
AS7C4096A  
®
Package dimensions  
c
44434241403938373635343332313029282726  
252423  
44-pin TSOP 2  
Min(mm) Max(mm)  
A
1.2  
A
0.05  
0.95  
0.15  
1.05  
E
E1  
1
44-pin TSOP 2  
A
2
b
c
0.30  
0.45  
0.21  
0.12  
1
2
3 4 5 6 7 8 9 10 1112131415 16171819202122  
d
18.31  
10.06  
11.68  
18.52  
10.26  
11.94  
E1  
E
e
d
L
A2  
A
0.80 (typical)  
0–5°  
A1  
L
0.40  
0.60  
b
e
36-pin SOJ 400  
Min(mils) Max(mils)  
A
0.128  
0.025  
0.105  
0.015  
0.026  
0.007  
.920  
0.148  
A
1
A
0.115  
0.020  
0.032  
0.013  
.930  
2
D
e
b
b1  
b
1
E1E2  
A
36-pin SOJ  
c
D
e
A1  
Seating  
Plane  
b
0.045  
0.055  
Pin 1  
c
E
0.370 BSC  
A2  
E
0.395  
0.435  
0.405  
0.445  
1
2
E
E
5/27/05, v. 1.1  
Alliance Semiconductor  
P. 7 of 10  
AS7C4096A  
®
Ordering codes  
Package  
Version  
10 ns  
12 ns  
15 ns  
20 ns  
Commercial  
Industrial  
AS7C4096A-10JC  
AS7C4096A-10JI  
AS7C4096A-10TC  
AS7C4096A-10TI  
AS7C4096A-12JC  
AS7C4096A-12JI  
AS7C4096A-12TC  
AS7C4096A-12TI  
AS7C4096A-15JC  
AS7C4096A-15JI  
AS7C4096A-15TC  
AS7C4096A-15TI  
AS7C4096A-20JC  
AS7C4096A-20JI  
AS7C4096A-20TC  
AS7C4096A-20TI  
SOJ  
Commercial  
Industrial  
TSOP 2  
Note: Add suffix ‘N’ to the above part number for Lead Free Parts. (Ex: AS7C4096A - 10 TIN)  
Part numbering system  
AS7C  
4096A  
–XX  
J or T  
X
X
Packages:  
J: SOJ 400 mil  
T: TSOP 2  
Temperature ranges:  
C: Commercial, 0°C to 70°C N=Lead Free Parts  
I: Industrial, –40°C to 85°C  
SRAM  
prefix  
Device  
number  
Access time  
5/27/05, v. 1.1  
Alliance Semiconductor  
P. 8 of 10  
AS7C4096A  
®
Revision History  
Rev. No.  
History  
Revised Date  
v1.0  
Initial release  
Included I , I & I  
11/08/04  
parameters  
SB1  
CC SB  
v1.1  
05/27/05  
Corrected the following: T , V  
V
& t  
OE  
IH, OL WZ  
5/27/05, v. 1.1  
Alliance Semiconductor  
P. 9 of 10  
AS7C4096A  
®
®
Alliance Semiconductor Corporation  
2575, Augustine Drive,  
Santa Clara, CA 95054  
Tel: 408 - 855 - 4900  
Copyright © Alliance Semiconductor  
All Rights Reserved  
Part Number: AS7C4096A  
Document Version: v. 1.1  
Fax: 408 - 855 - 4999  
www.alsc.com  
© Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered  
trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make  
changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document.  
The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at  
any time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The information in  
this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide, any  
guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of the application or use of any product  
described herein, and disclaims any express or implied warranties related to the sale and/or use of Alliance products including liability or warranties related  
to fitness for a particular purpose, merchantability, or infringement of any intellectual property rights, except as express agreed to in Alliance's Terms and  
Conditions of Sale (which are available from Alliance). All sales of Alliance products are made exclusively according to Alliance's Terms and Conditions of  
Sale. The purchase of products from Alliance does not convey a license under any patent rights, copyrights; mask works rights, trademarks, or any other  
intellectual property rights of Alliance or third parties. Alliance does not authorize its products for use as critical components in life-supporting systems  
where a malfunction or failure may reasonably be expected to result in significant injury to the user, and the inclusion of Alliance products in such life-  
supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use.  

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