AS7C4096A-20TCN [ALSC]
5.0V 512K x 8 CMOS SRAM; 5.0V 512K ×8 CMOS SRAM型号: | AS7C4096A-20TCN |
厂家: | ALLIANCE SEMICONDUCTOR CORPORATION |
描述: | 5.0V 512K x 8 CMOS SRAM |
文件: | 总10页 (文件大小:325K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
May 2005
Preliminary
AS7C4096A
®
5.0V 512K × 8 CMOS SRAM
• Equal access and cycle times
Features
• Easy memory expansion with CE
• TTL-compatible, three-state I/O
• JEDEC standard packages
- 400 mil 36-pin SOJ
- 44-pin TSOP 2
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA
, OE inputs
• Pin compatible to AS7C4096
• Industrial and commercial temperature
• Organization: 524,288 words × 8 bits
• Center power and ground pins
• High speed
- 10/12/15/20 ns address access time
- 5/6 ns output enable access time
• Low power consumption: ACTIVE
- 880mW/max @ 10 ns
• Low power consumption: STANDBY
- 55mW/max CMOS
Logic block diagram
Pin arrangements
36-pin SOJ (400 mil)
44-pin TSOP 2
VCC
NC
NC
A0
A1
A2
A3
A4
CE
NC
NC
NC
A18
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
A3
A4
CE
1
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
2
GND
2
A18
A17
3
3
4
Input buffer
4
A16
A15
OE
A17
A16
A15
OE
5
5
6
6
7
A0
A1
A2
I/O1
I/O2
7
I/O8
I/O7
GND
VCC
8
8
I/O1
I/O2
VCC
I/O8
I/O7
9
I/O1
I/O8
VCC
9
10
11
12
13
14
15
16
17
18
19
20
21
22
GND
I/O3
I/O4
WE
A5
10
11
12
13
14
15
16
17
18
524,288 × 8
A3
GND
I/O6
I/O5
A14
A13
A12
A11
A10
NC
VCC
GND
I/O3
I/O4
WE
A5
A4
Array
(4,194,304)
I/O6
I/O5
A14
A13
A12
A11
A10
NC
A5
A6
A7
A8
A9
A6
A7
A6
A8
A7
A9
A8
A9
NC
NC
NC
NC
Column decoder
WE
OE
CE
Control
Circuit
Selection guide
–10
–12
12
–15
–20
Unit
ns
Maximum address access time
Maximum outputenable access time
Maximum operating current
10
5
15
6
20
6
6
ns
160
10
140
10
120
10
100
10
mA
mA
Maximum CMOS standby current
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Alliance Semiconductor
P. 1 of 10
Copyright © Alliance Semiconductor. All rights reserved.
AS7C4096A
®
Functional description
The AS7C4096A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as
524,288 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are
desired.
Equal address access and cycle times (t , t , t ) of 10/12/15/20 ns with output enable access times (t ) of 5/6 ns are ideal
AA RC WC
OE
for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory
systems.
When CE is high the device enters standby mode. The device is guaranteed not to exceed 55mW power consumption in CMOS
standby mode.
A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1–I/O8 is written
on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins
only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip
drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write
enable is active, output drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from a single 5.0V supply voltage. This device is available as
per industry standard 400-mil 36-pin SOJ and 44-pin TSOP 2 packages.
Absolute maximum ratings
Parameter
Symbol
Min
–0.5
–0.5
–
Max
Unit
V
Voltage on V relative to GND
V
V
+7.0
CC
t1
t2
D
Voltage on any pin relative to GND
Power dissipation
V
+0.5
V
CC
P
T
1.0
W
Storage temperature (plastic)
–65
–55
–
+150
+125
20
°C
°C
mA
stg
Temperature with V applied
T
CC
bias
DC current into output (low)
I
OUT
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Truth table
CE
WE
OE
Data
Mode
Standby (I , I
)
H
X
X
High Z
SB SB1
Output disable (I
)
L
L
L
H
H
L
H
L
High Z
CC
D
Read (I
)
OUT
CC
D
Write (I
)
CC
X
IN
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Alliance Semiconductor
P. 2 of 10
AS7C4096A
®
Recommended operating condition
Parameter
Symbol
Min
4.5
2.2
–0.5
0
Nominal
Max
Unit
V
Supply voltage
V
(10/12/15/20)
5.0
–
5.5
CC
*
V
V
+ 0.5
CC
V
IH
Input voltage
**
V
–
0.8
70
85
V
IL
commercial
industrial
T
–
°C
°C
Ambient operating
temperature
A
T
–40
–
A
*
VIH max = VCC + 1.5V for pulse width less than 5 nS.
**
VIL min = –1.0V for pulse width less than 5 nS.
.
DC operating characteristics (over the operating range)1
–10
–12
–15
–20
Parameter
Symbol
Test conditions
= Max, V = GND to V
CC
Min Max Min Max Min Max Min Max Unit Notes
Input leakage
current
|I |
–
–
1
1
–
–
1
1
–
–
1
1
–
–
1
1
µA
µA
LI
V
CC
IN
Output leakage
current
V
= Max, CE = V
CC
IH
|I
I
|
LO
CC
V
= GND to V
OUT
CC
Operating power
supply current
V
= Max, CE < V
CC
IL
–
–
160
60
–
–
140
55
–
–
120
50
–
–
100 mA
40 mA
f = f , I
= 0mA
Max OUT
V
= Max, CE > V
IH
CC
I
SB
f = f , I
= 0mA
Max OUT
Standby power
supply current
V
= Max,
CC
CE ≥ V – 0.2V,
≤ 0.2V or V ≥ V – 0.2V,
CC
I
–
10
–
10
–
10
–
10 mA
SB1
V
IN
IN
CC
f = 0
–
–
0.4
0.5
–
–
–
0.4
0.5
–
–
–
0.4
0.5
–
–
–
0.4
V
I
I
= 6 mA, V = Min
CC
OL
OL
V
V
4
4
OL
Output voltage
0.5
= 8 mA, V = Min
CC
2.4
2.4
2.4
2.4
–
V
I
= –4 mA, V = Min
OH
OH
CC
Capacitance (f = 1MHz, T = 25° C, V = NOMINAL)4
a
CC
Parameter
Input capacitance
I/O capacitance
Symbol
Signals
Test conditions
= 0V
Max
Unit
C
V
5
pF
pF
A, CE, WE, OE
I/O
IN
IN
C
V
= V = 0V
OUT
7
I/O
IN
5/27/05, v. 1.1
Alliance Semiconductor
P. 3 of 10
AS7C4096A
®
Read cycle (over the operating range)2,8
–10
–12
–15
–20
Parameter
Read cycle time
Symbol Min
Max
Min
Max
Min
Max
Min
Max Unit Notes
t
t
10
–
–
–
3
3
–
0
–
0
–
–
12
–
15
–
20
–
20
20
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
RC
10
10
5
–
–
–
3
3
–
0
–
0
–
12
12
6
–
–
–
3
3
–
0
–
0
–
15
15
6
–
–
–
3
3
–
0
–
0
–
2
2
Address access time
AA
t
Chip enable (CE) access time
Output enable (OE) access time
Output hold from address change
CE Low to output in low Z
CE High to output in high Z
OE Low to output in low Z
OE High to output in high Z
Power up time
ACE
t
OE
t
–
–
–
–
4
OH
t
–
–
–
–
3,4
3,4
3,4
3,4
3,4
3,4
CLZ
t
5
6
7
9
CHZ
t
–
–
–
–
OLZ
OHZ
t
5
6
7
9
t
–
–
–
–
PU
t
10
12
15
20
Power down time
PD
Key to switching waveforms
Rising input
Falling input
Undefined/don’t care
Read waveform 1 (address controlled)2,5,6,8
tRC
Address
tAA
tOH
DOUT
Data valid
Read waveform 2 (CE, OE controlled)2,5,7,8
tRC1
CE
tOE
OE
tOLZ
tOHZ
tCHZ
tACE
DOUT
Data valid
tCLZ
tPD
50%
ICC
ISB
tPU
Supply
current
50%
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Alliance Semiconductor
P. 4 of 10
AS7C4096A
®
Write cycle (over the operating range)9
–10
–12
–15
–20
Parameter
Write cycle time
Symbol Min
Max
Min
Max
Min
Max
Min
Max Unit Notes
t
t
t
10
7
–
12
–
15
–
20
–
–
–
–
–
–
–
–
–
–
9
–
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WC
CW
AW
–
–
–
–
–
–
–
–
–
5
–
8
8
–
–
–
–
–
–
–
–
–
6
–
10
10
0
–
–
–
–
–
–
–
–
–
7
–
12
12
0
Chip enable (CE) to write end
Address setup to write end
Address setup time
7
t
0
0
AS
t
t
7
8
10
15
0
12
20
0
Write pulse width (OE = high)
Write pulse width (OE = low
Address hold from end of write
Write recovery time
WP1
WP2
10
0
12
0
t
t
AH
0
0
0
0
WR
DW
t
5
6
7
9
Data valid to write end
t
0
0
0
0
3,4
3,4
3,4
Data hold time
DH
t
t
2
2
2
2
Write enable to output in high Z
Output active from write end
WZ
3
3
3
3
OW
Write waveform 1 (WE controlled)9
tWC
tWR
tAH
tAW
Address
tWP
WE
tAS
tDW
Data valid
tDH
DIN
tWZ
tOW
DOUT
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Alliance Semiconductor
P. 5 of 10
AS7C4096A
®
Write waveform 2 (CE controlled)9
tWC
tWR
tAH
tAW
Address
tAS
tCW
CE
tWP
WE
DIN
tDW
Data valid
tDH
AC test conditions
- Output load: see Figure B.
- Input pulse level: GND to V - 0.5V. See Figures A and B.
CC
- Input rise and fall times: 2 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
+5.0V
Thevenin equivalent:
168
480Ω
Ω
V
- 0.5V
GND
DOUT
255
CC
90%
10%
90%
10%
+1.728V
DOUT
Ω
C10
2 ns
Figure A: Input pulse
GND
Figure B: 5.0V Output load
Notes
1
2
3
4
5
6
7
8
9
During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
For test conditions, see AC Test Conditions.
tCLZ and tCHZ are specified with CL = 5pF as in Figure B. Transition is measured ±500 mV from steady-state voltage.
This parameter is guaranteed, but not tested.
WE is HIGH for read cycle.
CE and OE are LOW for read cycle.
Address valid prior to or coincident with CE transition Low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
All write cycle timings are referenced from the last valid address to the first transitioning address.
10 C = 30pF, except at high Z and low Z parameters, where C = 5pF.
5/27/05, v. 1.1
Alliance Semiconductor
P. 6 of 10
AS7C4096A
®
Package dimensions
c
44434241403938373635343332313029282726
252423
44-pin TSOP 2
Min(mm) Max(mm)
A
1.2
A
0.05
0.95
0.15
1.05
E
E1
1
44-pin TSOP 2
A
2
b
c
0.30
0.45
0.21
0.12
1
2
3 4 5 6 7 8 9 10 1112131415 16171819202122
d
18.31
10.06
11.68
18.52
10.26
11.94
E1
E
e
d
L
A2
A
0.80 (typical)
0–5°
A1
L
0.40
0.60
b
e
36-pin SOJ 400
Min(mils) Max(mils)
A
0.128
0.025
0.105
0.015
0.026
0.007
.920
0.148
–
A
1
A
0.115
0.020
0.032
0.013
.930
2
D
e
b
b1
b
1
E1E2
A
36-pin SOJ
c
D
e
A1
Seating
Plane
b
0.045
0.055
Pin 1
c
E
0.370 BSC
A2
E
0.395
0.435
0.405
0.445
1
2
E
E
5/27/05, v. 1.1
Alliance Semiconductor
P. 7 of 10
AS7C4096A
®
Ordering codes
Package
Version
10 ns
12 ns
15 ns
20 ns
Commercial
Industrial
AS7C4096A-10JC
AS7C4096A-10JI
AS7C4096A-10TC
AS7C4096A-10TI
AS7C4096A-12JC
AS7C4096A-12JI
AS7C4096A-12TC
AS7C4096A-12TI
AS7C4096A-15JC
AS7C4096A-15JI
AS7C4096A-15TC
AS7C4096A-15TI
AS7C4096A-20JC
AS7C4096A-20JI
AS7C4096A-20TC
AS7C4096A-20TI
SOJ
Commercial
Industrial
TSOP 2
Note: Add suffix ‘N’ to the above part number for Lead Free Parts. (Ex: AS7C4096A - 10 TIN)
Part numbering system
AS7C
4096A
–XX
J or T
X
X
Packages:
J: SOJ 400 mil
T: TSOP 2
Temperature ranges:
C: Commercial, 0°C to 70°C N=Lead Free Parts
I: Industrial, –40°C to 85°C
SRAM
prefix
Device
number
Access time
5/27/05, v. 1.1
Alliance Semiconductor
P. 8 of 10
AS7C4096A
®
Revision History
Rev. No.
History
Revised Date
v1.0
Initial release
Included I , I & I
11/08/04
parameters
SB1
CC SB
v1.1
05/27/05
Corrected the following: T , V
V
& t
OE
IH, OL WZ
5/27/05, v. 1.1
Alliance Semiconductor
P. 9 of 10
AS7C4096A
®
®
Alliance Semiconductor Corporation
2575, Augustine Drive,
Santa Clara, CA 95054
Tel: 408 - 855 - 4900
Copyright © Alliance Semiconductor
All Rights Reserved
Part Number: AS7C4096A
Document Version: v. 1.1
Fax: 408 - 855 - 4999
www.alsc.com
© Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered
trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make
changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document.
The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at
any time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The information in
this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide, any
guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of the application or use of any product
described herein, and disclaims any express or implied warranties related to the sale and/or use of Alliance products including liability or warranties related
to fitness for a particular purpose, merchantability, or infringement of any intellectual property rights, except as express agreed to in Alliance's Terms and
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