AV111-12 [ALPHA]
HIP3⑩ Variable Attenuator 0.80-1.00 GHz; HIP3⑩可变衰减器0.80-1.00 GHz的
| 型号： | AV111-12 |
| 厂家： | 
ALPHA INDUSTRIES |
| 描述： | HIP3⑩ Variable Attenuator 0.80-1.00 GHz |
| 文件： | 总3页 (文件大小：834K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HIP3™ Variable Attenuator
0.80–1.00 GHz
AV111-12
Features
ꢀ +40 dBm IP3 Typical
SOIC-8
SOIC-8
ꢀ Low Loss 1 dB Typical
ꢀ Attenuation 30 dB Typical
ꢀ Good VSWR <1.5:1 Typical
ꢀ Low Phase Shift
Description
The AV111-12 is a current controlled variable attenuator
from Alpha’s series of HIP3™ components. It is designed
to meet the wide dynamic range required in spread
spectrum wireless base station applications. A monolithic
quadrature hybrid is teamed with a silicon PIN diode pair
in a plastic surface mount package reducing size and
assuring consistency from part to part.
Electrical Specifications at 25°C
Parameter
Min.
Typ.
Max.
Unit
GHz
dB
Frequency
0.80
1.0
1.5
Insertion Loss (0 mA Control Current)
Attenuation @ 1.2 mA Control Current (900 MHz)
VSWR All Ports
1.0
17.5
+37
21.5
1.8
dB
1.5
+40
7
Input 3rd Order Intercept
dBm
Deg.
ns
1
Relative Phase Shift Up to 20 dB Attenuation
10
Group Delay
0.4
0.9
Operating Characteristics at 25°C (0, +5 V)
2
Parameter
Condition
Frequency
Min.
Typ.
Max.
Unit
3
Switching Characteristics
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
Video Feedthru (Peak)
5
8
5
µs
µs
mV
Maximum Input Power for <1 dB
Attenuation Variation
+15
dBm
1. When built with external components as shown in the Pin Out diagram.
2. All measurements made in a 50 Ω system, unless otherwise specified.
3. 0–4 mA square wave total control current.
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
1
Specifications subject to change without notice. 6/01A
HIP3™ Variable Attenuator 0.80–1.00 GHz
AV111-12
Typical Performance Data
1.70
0
-5
1.60
800 MHz
-10
-15
-20
-25
-30
-35
-40
-45
-50
1.50
1.40
1 GHz
1.30
1.20
1000MHz
900MHz
900 MHz
1.10
800MHz
1.5
1.00
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
2.0
Current (mA)
Current (mA)
Input/Output VSWR vs. Current
Attenuation vs. Current
0
-5
24
20
16
12
8
0 mA
0.1 mA
1.4 mA
0.5 mA
0.9 mA
-10
-15
-20
1.2 mA
1.2 mA
1.0 mA
-25
-30
4
0.5 mA
0 mA
1.00
1.4 mA
1.00
0
0.80
0.80
0.85
0.90
0.95
0.84
0.88
0.92
0.96
Frequency(GHz)
Frequency (GHz)
Attenuation vs. Frequency
Relative Phase vs. Frequency
100
25
20
15
10
5
1000 MHz
900 MHz
10
1
0
-5
800 MHz
-10
-15
-20
-25
0.1
0.01
400
500
600
700
800
900 1000
-35
-30
-25
-20
-15
-10
-5
0
Voltage (V)
Attenuation (dB)
Typical PIN Diode Current vs. Voltage
Relative Phase vs. Attenuation
2
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 6/01A
HIP3™ Variable Attenuator 0.80–1.00 GHz
AV111-12
Pin Out
Connection Diagram
680 Ω
CONTROL
CURRENT
RF OUT
220 pF
220 pF
100 nH
100 nH
CONTROL
CURRENT
CONTROL
CURRENT
GND
GND
RF IN
CONTROL
CURRENT
GND
GND
RF In
RF Out
SOIC-8
PIN 8
0.050 (1.27 mm) BSC
Absolute Maximum Ratings
0.244 (6.20 mm)
0.228 (5.80 mm)
Characteristic
Value
PIN 1
INDICATOR
RF Input Power
0.5 W CW, 4 W @ 12.5%
Duty Cycle
Control Current
50 mA per Diode
-65 to +125°C
-65 to +125°C
-100 V
0.020 (0.51 mm) MAX.
PIN 1
Operating Temperature
Storage Temperature
0.016 MAX.
(0.41 mm) x
45˚ CHAMFER
0.049
(1.24 mm)
0.016
0.068
(1.73 mm) MAX.
Maximum Reverse Diode Voltage
Electrostatic Discharge
(0.41 mm)
+125 V
8˚
MAX.
Note: Operating this device above any of these parameters may cause
irreversible damage.
0.197 (5.00 mm)
0.189 (4.80 mm)
0.158 (4.00 mm)
0.150 (3.80 mm)
0.010 (0.25 mm)
0.007 (0.17 mm)
0.010 (0.25 mm)
0.004 (0.10 mm)
Recommended Board Layout
SK38531
RF In/Out
0.018
RF In/Out
20 mil Diameter
Ground Via
Pin 1
22 nH
Bias Input
120 pF
Material is 10 mil FR4.
680 Ω
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
3
Specifications subject to change without notice. 6/01A
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