AM9435M8VR [AITSEMI]
P-CHANNEL ENHANCEMENT MODE;
| 型号： | AM9435M8VR |
| 厂家： | 
AiT Semiconductor |
| 描述： | P-CHANNEL ENHANCEMENT MODE |
| 文件： | 总8页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM9435
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM9435 is the P-Channel logic enhancement
mode power field effect transistor is produced using
high cell density, advanced trench technology to
-30V/-5.8A, RDS(ON)=38mΩ(typ.)@VGS=-10V
-30V/-4.0A, RDS(ON)=60mΩ(typ.)@VGS=-4.5V
Super high density cell design for extremely low
RDS(ON)
provide excellent RDS(ON)
.
Exceptional on-resistance and maximum DC
current capability
This device is suitable for use as a load switch or in
PWM and gate charge for most of the synchronous
buck converter applications.
Available in SOP8 Package
APPLICATION
The AM9435 is available in SOP8 Package
Power Management in Note book
Portable Equipment
DSC
ORDERING INFORMATION
LCD Display inverter
Battery Powered System
DC/DC Converter
Load Switch
Package Type
SOP8
Part Number
AM9435M8R
AM9435M8VR
M8
R: Tape & Reel
Note
V: Halogen free Package
P-CHANNEL MOSFET
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
REV1.1
- MAR 2010 RELEASED, JUL 2012 UPDATED -
- 1 -
AM9435
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
PIN DESCRIPTION
`
Top View
Symbol
Pin #
Function
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
REV1.1
- MAR 2010 RELEASED, JUL 2012 UPDATED -
- 2 -
AM9435
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
ABSOLUTE MAXIMUM RATINGS
TA = 25℃ Unless otherwise noted
VDSS, Drain-Source Voltage
VGSS, Gate-Source Voltage
-30V
±20V
TA=25℃
TA=70℃
-5.8A
ID, Continuous Drain Current, VGS=10VNOTE1
-4.2A
IDM, Pulsed Drain CurrentNOTE2
-12A
EAS, Single Pulse Avalanche energy L=0.1mHNOTE3
60mJ
TA=25℃
TA=70℃
2.05W
PD, Power Dissipation
1.5W
TJ, Operation Junction Temperature
TSTG, Storage Temperature Range
-55℃~150℃
-55℃~150℃
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
NOTE1: The value of RΘJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. copper, I a still air environment with
TA=25℃.
NOTE2: The data tested by pulsed, pulse width ≦ 300uS, duty cycle ≦2 %.
NOTE3: The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH.
THERMAL INFORMATION
Parameter
Symbol
Min
Typ
Max
85
58
Unit
°C/W
°C/W
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
RΘJA
RΘJC
REV1.1
- MAR 2010 RELEASED, JUL 2012 UPDATED -
- 3 -
AM9435
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
ELECTRICAL CHARACTERISTICS
TA = 25℃ Unless otherwise noted
Parameter
Static Parameters
Symbol
Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
IGSS
VGS =0V,ID=-250μA
VDS=VGS,ID=-250μA
VDS=0V,VGS=±20V
VDS =-24V,VGS =0V
VDS=-24V,VGS=0V
TJ =55°C
-30
-
-
-
-
-
V
V
-1.0
-2.5
±100
-1
Gate Leakage Current
-
-
nA
Zero Gate Voltage Drain Current
Drain-source On-ResistanceNOTE2
IDSS
µA
-
-
-5
VGS =-10V,ID=-5.8A
VGS =-4.5V, ID=-4.0A
-
-
-
38
60
6
48
78
-
RDS(ON)
GFS
mΩ
Forward Transconductance
Source-Drain Diode
VDS=-10V,ID=-5.8A
S
Diode Forward Voltage
Continuous Source CurrentNOTE1,4
Dynamic Parameters
Total Gate Charge
VSD
IS
IS=-2.0A,VGS=0V
-
-0.7
-1.2
-6
V
A
QG
-
-
-
-
-
-
-
6.2
2.5
-
-
-
-
-
-
-
VDS=-20V,VGS=-10V
ID=-5.8A
Gate-Source Charge
QGS
nC
pF
Gate-Drain Charge
QGD
CISS
COSS
CRSS
tD(ON)
3.3
Input Capacitance
640
270
103
9.2
VDS=-15V,VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
tR
VDD =15V, VGS=-10V,
-
-
-
16.5
21.3
21.5
-
-
-
nS
ID=-5A, RG=3.3Ω
tD(OFF)
tF
NOTE4: The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
REV1.1
- MAR 2010 RELEASED, JUL 2012 UPDATED -
- 4 -
AM9435
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
TYPICAL CHARACTERISTICS
1. Output Characteristics
3. Drain Source On Resistance
5. Gate Charge
2. Transfer Characteristics
4. Gate Threshold Voltage
6. Drain Source On Resistance
REV1.1
- MAR 2010 RELEASED, JUL 2012 UPDATED -
- 5 -
AM9435
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
7. Source Drain Diode Forward
8. Capacitance
9. Power Dissipation
10. Drain Current
11. Thermal Transient Impedance
REV1.1
- MAR 2010 RELEASED, JUL 2012 UPDATED -
- 6 -
AM9435
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
PACKAGE INFORMATION
Dimension in SOP8 (Unit: mm)
Symbol
Min
Max
A
A1
A2
b
1.400
0.100
1.300
0.330
0.190
4.800
3.700
5.790
1.750
0.250
1.500
0.510
0.250
5.300
4.100
6.200
c
D
E
E1
e
1.270(BSC)
L
0.380
0°
1.270
8°
θ
REV1.1
- MAR 2010 RELEASED, JUL 2012 UPDATED -
- 7 -
AM9435
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
-30V P-CHANNEL ENHANCEMENT MODE
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer.
As used herein may
In order to
involve potential risks of death, personal injury, or servere property, or environmental damage.
minimize risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.1
- MAR 2010 RELEASED, JUL 2012 UPDATED -
- 8 -
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