MSA-0336-TR1 [AGILENT]
Cascadable Silicon Bipolar MMIC Amplifiers; 级联硅双极MMIC放大器
| 型号： | MSA-0336-TR1 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Cascadable Silicon Bipolar MMIC Amplifiers |
| 文件： | 总4页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cascadable Silicon Bipolar
MMIC Amplifiers
Technical Data
MSA-0335, -0336
35 micro-X Package[1]
designed for use as a general
Features
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applica-
tions.
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.7 GHz
• 12.0 dB Typical Gain at
1.0 GHz
The MSA-series is fabricated using
• 10.0 dBm Typical P1dB at
1.0 GHz
HP’s10GHzf ,25 GHzf
,
T
MAX
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
• Unconditionally Stable
(k>1)
Note:
1. Short leaded 36 package available
upon request.
• Cost Effective Ceramic
Microstrip Package
Description
The MSA-0335 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
Available in cut lead version
(package36)asMSA-0336.
Typical Biasing Configuration
R
bias
VCC > 7 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 5 V
d
2
5965-9568E
6-302
MSA-0335, -0336 Absolute Maximum Ratings
Thermal Resistance[2,5]
:
Parameter
AbsoluteMaximum[1]
θjc =150°C/W
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature[4]
80 mA
425mW
+13dBm
200°C
–65to200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE =25°C.
3. Derate at 6.7 mW/°C for TC > 136°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
PowerGain(|S21|2)
f=0.1GHz
dB
dB
11.5
12.5
± 0.6
2.7
13.5
∆GP
f3 dB
Gain Flatness
f=0.1to1.6GHz
± 1.0
3 dB Bandwidth
GHz
Input VSWR
f=0.1to3.0GHz
f=0.1to3.0GHz
f=1.0GHz
1.6:1
1.7:1
10.0
6.0
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f=1.0GHz
f=1.0GHz
23.0
125
tD
f=1.0GHz
Vd
Device Voltage
4.5
5.0
5.5
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Notes:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
MSA-0335, -0336 Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0335
MSA-0336-BLK
MSA-0336-TR1
10
100
1000
Strip
Antistatic Bag
7" Reel
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
6-303
MSA-0335, -0336 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.05
.05
.04
.04
.03
.02
.03
.08
.14
.21
.27
.31
.37
.51
177
170
161
156
149
154
–104
–136
–157
–176
170
157
125
87
12.6
12.5
12.5
12.4
12.2
12.1
11.6
10.9
10.0
9.0
4.25
4.24
4.20
4.15
4.09
4.02
3.79
3.49
3.16
2.81
2.49
2.20
1.76
1.38
175
170
160
151
142
132
109
87
–18.6
–18.3
–18.3
–18.3
–17.9
–17.6
–16.8
–15.7
–14.9
–14.6
–13.9
–13.6
–12.9
–12.8
.118
.121
.122
.121
.128
.131
.145
.164
.180
.187
.202
.209
.226
.230
1
2
.17
.17
.17
.18
.19
.20
.20
.21
.23
.24
.25
.24
.20
.22
–8
–17
3
–33
5
–47
8
–61
9
–73
13
11
13
8
–102
–133
–155
–173
178
71
53
7.9
36
4
6.9
20
–1
–12
–25
177
4.9
–10
–38
165
2.8
130
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
14
60
14
12
10
8
T
T
T
= +125°C
= +25°C
= –55°C
C
C
C
12
50
40
30
20
Gain Flat to DC
10
8
6
4
2
0
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
6
10
0
4
0.1
0.3 0.5
1.0
3.0 6.0
0
1
2
3
4
5
6
15
20
25
30
(mA)
35
40
50
FREQUENCY (GHz)
V
(V)
I
d
d
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 35 mA.
Figure 3. Power Gain vs. Current.
Figure 2. Device Current vs. Voltage.
7.0
6.5
18
15
13
12
G
P
11
11
10
I
I
= 50 mA
= 35 mA
d
d
12
9
P
1 dB
9
8
6.0
5.5
7
6
6
I
I
I
= 20 mA
= 35 mA
= 50 mA
d
d
d
3
NF
5
I
= 20 mA
d
5.0
0
4
0.1
0.2 0.3 0.5
1.0
2.0
4.0
0.1
0.2 0.3 0.5
1.0
2.0
4.0
–55 –25
+25
+85
+125
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f=1.0 GHz, Id = 35 mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-304
35 micro-X Package Dimensions
4
GROUND
.085
2.15
.083
2.11
DIA.
RF OUTPUT
AND BIAS
RF INPUT
1
3
.020
.508
2
GROUND
Notes:
(unless otherwise specified)
in
mm
1. Dimensions are
2. Tolerances
.057 ± .010
1.45 ± .25
.100
2.54
in .xxx = ± 0.005
mm .xx = ± 0.13
.022
.56
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
6-305
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AGILENT
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