HPCL-817-36LE [AGILENT]
Transistor Output Optocoupler, 1-Element, 5000V Isolation;
| 型号： | HPCL-817-36LE |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Transistor Output Optocoupler, 1-Element, 5000V Isolation |
| 文件： | 总6页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Agilent HCPL-817
Phototransistor Optocoupler
High Density Mounting Type
Data Sheet
Features
•
Current Transfer Ratio
(CTR: min. 50% at I = 5 mA,
F
V
CE
= 5 V)
•
•
High input-output isolation voltage
(V = 5000 Vrms)
Description
Ordering Information
Specify part number followed by
Option Number (if desired).
iso
The HCPL-817 contains a light
emitting diode optically coupled to
a phototransistor. It is packaged in
a 4-pin DIP package and available
in wide-lead spacing option and
lead bend SMD option. Input-output
isolation voltage is 5000 Vrms.
Response time, t , is typically 4 µs
and minimum CTR is 50% at input
current of 5 mA.
Response time (t : typ., 4 µs at
r
V
CE
= 2 V, I = 2 mA, R = 100 Ω)
C L
•
•
•
•
•
Compact dual-in-line package
UL approved
CSA approved
IEC/EN/DIN EN 60747-5-2 approved
Options available:
– Leads with 0.4" (10.16 mm)
spacing (W00)
– Leads bends for surface
mounting (300)
– Tape and reel for SMD (500)
– IEC/EN/DIN EN 60747-5-2
approvals (060)
HCPL-817-XXXX
Option Number
060 = IEC/EN/DIN EN 60747-5-2
Option
W00 = 0.4" Lead Spacing Option
300 = Lead Bend SMD Option
500 = Tape and Reel Packaging
Option
00A = Rank Mark A
00B = Rank Mark B
00C = Rank Mark C
r
00D = Rank Mark D
00L = Rank Mark L
Functional Diagram
Applications
XXXE = Lead Free Option
•
Signal transmission between
circuits of different potentials and
impedances
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
4
3
•
•
I/O interfaces for computers
Feedback circuit in power supply
Schematic
I
I
C
1
+
F
4
3
ANODE
COLLECTOR
EMITTER
V
F
1
2
–
2
CATHODE
1. ANODE
3. EMITTER
2. CATHODE 4. COLLECTOR
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
Package Outline Drawings
4.6 ± 0.5
(0.181)
7.62 ± 0.3
(0.3)
4
3
TYPE NUMBER
DATE CODE
OPTION CODE
FOR OPTION 060
ONLY
3.5 ± 0.5
(0.138)
A 817 V
YWW
6.5 ± 0.5
(0.256)
0.5
TYP.
(0.02)
3.3 ± 0.5
(0.130)
2.8 ± 0.5
(0.110)
PIN ONE DOT
RANK MARK
1
2
0.5 ± 0.1
(0.02)
0.35 +0.15/-0.10
(0.014)
DIMENSIONS IN MILLIMETERS AND (INCHES)
7.62 ~ 9.98
2.54 ± 0.25
(0.1)
Package Outline – Option W00
4.6 ± 0.5
(0.181)
7.62 ± 0.3
(0.3)
3.5 ± 0.5
(0.138)
6.5 ± 0.5
(0.256)
6.9 ± 0.5
(0.272)
2.3 ± 0.5
(0.09)
2.8 ± 0.5
(0.110)
0.35 +0.15/-0.10
(0.014)
10.16 ± 0.5
(0.4)
0.5 ± 0.1
(0.02)
2.54 ± 0.25
(0.1)
DIMENSIONS IN MILLIMETERS AND (INCHES)
Package Outline – Option 300
4.6 ± 0.5
(0.181)
7.62 ± 0.3
(0.3)
3.5 ± 0.5
(0.138)
0.35 ± 0.25
(0.014)
6.5 ± 0.5
(0.256)
1.0 ± 0.25
(0.039)
1.2 ± 0.1
(0.047)
0.35 ± 0.25
(0.014)
10.16 ± 0.3
(0.4)
2.54 ± 0.25
(0.1)
DIMENSIONS IN MILLIMETERS AND (INCHES)
2
Absolute Maximum Ratings (T = 25˚C)
A
Storage Temperature, T
–55˚C to +125˚C
–30˚C to +100˚C
260˚C for 10 s
S
Operating Temperature, T
A
Lead Solder Temperature, max.
(1.6 mm below seating plane)
Average Forward Current, I
50 mA
6 V
F
Reverse Input Voltage, V
R
Input Power Dissipation, P
70 mW
50 mA
35 V
I
Collector Current, I
C
Collector-Emitter Voltage, V
Emitter-Collector Voltage, V
Collector Power Dissipation
Total Power Dissipation
CEO
6 V
ECO
150 mW
200 mW
5000 Vrms
Isolation Voltage, V (AC for 1 minute, R.H. = 40 ~ 60%)
iso
Electrical Specifications (T = 25˚C)
A
Parameter
Symbol
Min.
–
Typ.
1.2
–
Max.
Units
V
Test Conditions
I = 20 mA
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
V
F
1.4
10
250
100
–
F
I
R
–
µA
pF
nA
V
V = 4 V
R
C
t
–
30
–
V = 0, f = 1 KHz
I
–
V
CE
= 20 V
CEO
Collector-Emitter Breakdown Voltage BV
Emitter-Collector Breakdown Voltage BV
35
6
–
I = 0.1 mA
C
CEO
ECO
–
–
V
I = 10 µA
E
Collector Current
I
2.5
50
–
–
30
600
0.2
18
18
–
mA
%
I = 5 mA, V = 5 V,
F CE
C
*Current Transfer Ratio
Collector-Emitter Saturation Voltage
Response Time (Rise)
Response Time (Fall)
CTR
–
R
BE
= ∞
V
0.1
4
V
I = 20 mA, I = 1 mA
F C
CE(sat)
t
r
–
µs
µs
KHz
V = 2 V, I = 2 mA
CC C
t
f
–
3
R = 100 Ω
L
Cut-off Frequency
f
c
–
80
V = 5 V, I = 2 mA
CC C
R = 100 Ω, –3 dB
L
10
11
Isolation Resistance
Floating Capacitance
R
iso
C
f
5 x 10
–
1 x 10
0.6
–
Ω
DC 500 V
40 ~ 60% R.H.
1.0
pF
V = 0, f = 1 MHz
I
I
C
* CTR =
x 100%
F
Rank Mark
L
A
B
C
D
CTR (%)
50 ~ 100
80 ~ 160
130 ~ 260
200 ~ 400
300 ~ 600
Conditions
I = 5 mA, V = 5 V, T = 25°C
F
CE
A
3
60
50
40
30
20
10
0
6
5
4
3
2
200
150
100
50
T
= 25°C
A
I
I
I
I
I
= 0.5 mA
= 1 mA
= 3 mA
= 6 mA
= 7 mA
C
C
C
C
C
1
0
0
-30
0
25
50
75
100 125
0
2
I
4
6
8
10 12 14 16 18 20
-30
0
25
50
75
100 125
T
– AMBIENT TEMPERATURE – °C
– FORWARD CURRENT – mA
T
– AMBIENT TEMPERATURE – °C
A
F
A
Figure 1. Forward current vs. temperature.
Figure 2. Collector power dissipation vs.
temperature.
Figure 3. Collector-emitter saturation voltage
vs. forward current.
50
200
500
V
= 5 V
CE
= 25°C
T
= 25°C
(MAX.)
180
160
140
120
100
80
A
T
T
T
= 75°C
= 50°C
= 25°C
A
A
A
T
I
I
= 30 mA
= 20 mA
A
F
F
200
100
40
30
20
10
T
T
= 0°C
A
A
P
= -25°C
C
50
I
= 20 mA
F
20
10
I
I
= 10 mA
= 10 mA
F
F
60
5
40
20
2
1
I
= 5 mA
F
0
0
0
1
2
3
4
5
6
7
8
9
0
0.5
1.0
1.5
2.0
2.5
3.0
1
2
5
10
I – FORWARD CURRENT – mA
F
20
50
V
– COLLECTOR-EMITTER VOLTAGE – V
V
– FORWARD VOLTAGE – V
CE
F
Figure 4. Forward current vs. forward voltage.
Figure 5. Current transfer ratio vs. forward
current.
Figure 6. Collector current vs. collector-
emitter voltage.
10-5
0.16
150
I
I
= 20 mA
= 1 mA
I
V
= 5 mA
= 5 V
F
F
V
= 20 V
CE
0.14
0.12
0.10
0.08
0.06
0.04
C
CE
10-6
10-7
10-8
100
10-9
50
0
10-10
0.02
0
10-11
-25
0
25
50
75
100
-30
0
25
50
75
100
-25
0
T – AMBIENT TEMPERATURE – °C
A
25
50
75
100
T
– AMBIENT TEMPERATURE – °C
T
– AMBIENT TEMPERATURE – °C
A
A
Figure 7. Relative current transfer ratio vs.
temperature.
Figure 8. Collector-emitter saturation
voltage vs. temperature.
Figure 9. Collector dark current vs.
temperature.
4
500
V
= 2 V
= 2 mA
= 25°C
V
= 2 V
CE
CE
= 2 mA
200
100
I
C
I
C
T
0
10
20
A
T
= 25°C
A
50
tr
20
10
tf
R
= 10 kΩ
L
td
ts
5
R
= 1 kΩ
L
2
1
R
= 100 Ω
L
0.5
0.2
0.1
0.05 0.1 0.2 0.5
1
2
5
10
0.5
1
2
5
10 20 50 100 200 500
R
– LOAD RESISTANCE – kΩ
f – FREQUENCY – kHz
L
Figure 10. Response time vs. load resistance.
Figure 11. Frequency response.
Test Circuit for Response Time
Test Circuit for Frequency Response
V
V
CC
CC
R
R
L
L
R
R
D
D
INPUT
OUTPUT
OUTPUT
~
INPUT
10%
90%
OUTPUT
td
ts
tr
tf
5
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
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Taiwan: (+65) 6755 1843
Data subject to change.
Copyright © 2003 Agilent Technologies, Inc.
Obsoletes 5988-4116EN
November 4, 2003
5989-0293EN
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