CNY17-3-000E [AGILENT]
Transistor Output Optocoupler, 1-Element, 5000V Isolation, LEAD FREE, DIP-6;
| 型号： | CNY17-3-000E |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Transistor Output Optocoupler, 1-Element, 5000V Isolation, LEAD FREE, DIP-6 输出元件 光电 |
| 文件： | 总6页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Agilent CNY17-x
Phototransistor Optocoupler
High Collector-Emitter
Voltage Type
Data Sheet
Features
•
•
•
High collector-emitter voltage
(V =70V)
CEO
High input-output isolation voltage
(V =5000Vrms)
iso
Description
Ordering Information
Specify part number followed by
Option Number (if desired).
Current Transfer Ratio
The CNY17 contains a light emitting
diode optically coupled to a photo-
transistor. It is packaged in a 6-pin
DIP package and available in wide-
lead spacing option and lead bend
SMD option. Collector-emitter
voltage is above 70 V. Response
(CTR: min. 40% at I = 10 mA,
F
V
= 5 V)
CE
•
Response time (t : typ., 5 µs at
r
CNY17-3-XXXE
V
= 10 V, I = 2 mA, R = 100 Ω)
CC
C L
•
•
•
•
•
Dual-in-line package
UL approved
Lead Free
Option Number
time, t , is typically 5 µs and
CSA approved
r
minimum CTR is 40% at input
current of 10 mA.
000 = No Options
060 = IEC/EN/DIN EN 60747-5-2
Option
W00 = 0.4" Lead Spacing Option
300 = Lead Bend SMD Option
500 = Tape and Reel Packaging
Option
IEC/EN/DINEN60747-5-2approved
Options available:
– Leads with 0.4" (10.16 mm)
spacing(W00)
– Leads bends for surface
mounting(300)
– Tape and reel for SMD (500)
– IEC/EN/DINEN60747-5-2
approvals(060)
Functional Diagram
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
Applications
Schematic
•
System appliances, measuring
instruments
6
5
4
I
1
+
F
6
ANODE
BASE
•
Signal transmission between
circuits of different potentials and
impedances
V
F
–
2
CATHODE
•
Feedback circuit in power supply
I
C
5
4
COLLECTOR
EMITTER
1
2
3
1. ANODE
2. CATHODE
3. NC
4. EMITTER
5. COLLECTOR
6. BASE
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
Package Outline Drawings
CNY17-X-000E
7.3 ± 0.5
(0.287)
7.62 ± 0.3
(0.3)
MODEL
NO. *2
3.5 ± 0.5
(0.138)
LEAD FREE
A CNY17 -
6.5 ± 0.5
(0.256)
0.5
Y Y WW
TYP.
(0.02)
3.3 ± 0.5
(0.13)
2.8 ± 0.5
(0.110)
ANODE
DATE
CODE *1
0.26
(0.010)
0.5 ± 0.1
(0.02)
2.54 ± 0.25
(0.1)
DIMENSIONS IN MILLIMETERS AND (INCHES)
7.62 ~ 9.98
CNY17-X-060E
7.3 ± 0.5
(0.287)
7.62 ± 0.3
(0.3)
MODEL
NO. *2
3.5 ± 0.5
(0.138)
LEAD FREE
ANODE
A CNY17- V
6.5 ± 0.5
(0.256)
0.5
(0.02)
Y Y WW
TYP.
3.3 ± 0.5
(0.13)
2.8 ± 0.5
(0.110)
DATE
CODE *1
0.26
(0.010)
0.5 ± 0.1
(0.02)
2.54 ± 0.25
(0.1)
DIMENSIONS IN MILLIMETERS AND (INCHES)
7.62 ~ 9.98
CNY17-X-W00E
7.3 ± 0.5
(0.287)
7.62 ± 0.3
(0.3)
MODEL
NO. *2
3.5 ± 0.5
(0.138)
LEAD FREE
A CNY17 -
6.5 ± 0.5
(0.256)
6.9 ± 0.5
(0.272)
Y Y WW
2.3 ± 0.5
(0.09)
2.8 ± 0.5
(0.110)
ANODE
DATE
CODE *1
0.26
(0.010)
0.5 ± 0.1
(0.02)
2.54 ± 0.25
(0.1)
10.16 ± 0.5
(0.4)
DIMENSIONS IN MILLIMETERS AND (INCHES)
2
CNY17-X-300E
7.3 ± 0.5
(0.287)
7.62 ± 0.3
(0.3)
MODEL
NO. *2
0.35 +0.15/-0.10
(0.014)
3.5 ± 0.5
(0.138)
LEAD FREE
ANODE
A CNY17 -
6.5 ± 0.5
(0.256)
Y Y WW
1.0 ± 0.25
(0.039)
1.2 ± 0.1
(0.047)
0.35 ± 0.25
(0.014)
2.54 ± 0.25
(0.1)
DATE
CODE *1
10.16 ± 0.3
(0.4)
DIMENSIONS IN MILLIMETERS AND (INCHES)
30 seconds
Solder Reflow Temperature Profile
260°C (Peak Temperature)
1) One-time soldering reflow is
recommended within the
250°C
217°C
200°C
condition of temperature and
time profile shown at right.
150°C
2) When using another soldering
method such as infrared ray
lamp, the temperature may rise
partially in the mold of the
60 sec
25°C
60 ~ 150 sec
90 sec
Time (sec)
60 sec
device. Keep the temperature on
the package of the device within
the condition of (1) above.
Absolute Maximum Ratings
Storage Temperature, T
–55˚Cto+150˚C
–55˚Cto+100˚C
260˚C for 10 s
S
Operating Temperature, T
A
Lead Solder Temperature, max.
(1.6 mm below seating plane)
Average Forward Current, I
60 mA
6 V
F
Reverse Input Voltage, V
R
Input Power Dissipation, P
100 mW
150 mA
70 V
I
Collector Current, I
C
Collector-Emitter Voltage, V
Emitter-Collector Voltage, V
CEO
ECO
6 V
Collector-Base Voltage, V
70 V
CBO
Collector Power Dissipation
Total Power Dissipation
150 mW
250 mW
5000 Vrms
Isolation Voltage, V (AC for 1 minute, R.H. = 40 ~ 60%)
iso
3
Electrical Specifications (T = 25˚C)
A
Parameter
Symbol Min.
Typ.
1.4
–
Max.
1.7
10
100
50
–
Units
V
Test Conditions
I = 60 mA
Forward Voltage
V
F
–
F
Reverse Current
I
–
µA
pF
nA
V
V = 6 V
R
R
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Current
C
t
–
–
V = 0, f = 1 MHz
I
–
–
V = 10 V
CE
CEO
BV
BV
BV
70
6
–
I = 0.1 mA, I = 0
C F
CEO
ECO
CBO
–
–
V
I = 10 µA, I = 0
E F
70
4
–
–
V
I = 0.1 mA, I = 0
C F
I
–
32
mA
%
I = 10 mA
F
C
*Current Transfer Ratio CNY17-1
CTR
40
–
–
–
–
80
V = 5 V
CE
CNY17-2
CNY17-3
CNY17-4
63
100
160
125
200
320
Collector-Emitter Saturation Voltage
Response Time (Rise)
V
–
–
5
5
–
0.3
10
10
–
V
I = 10 mA, I = 2.5 mA
F C
CE(sat)
t
r
–
µs
µs
Ω
V = 5 V, I = 10 mA
CE C
Response Time (Fall)
t
f
–
R = 100 Ω
L
11
Isolation Resistance
R
iso
1 x 10
DC 500 V
40 ~ 60% R.H.
Floating Capacitance
C
f
–
–
2
pF
V = 0, f = 1 MHz
I
I
C
* CTR =
x 100%
F
80
60
40
20
0
200
160
150
100
50
0
-55 -25
0
25 50 75 100 125
-55 -25
0
25 50 75 100 125
T
– AMBIENT TEMPERATURE – °C
T
– AMBIENT TEMPERATURE – °C
A
A
Figure 1. Forward current vs. temperature.
Figure 2. Collector power dissipation vs.
temperature.
Figure 3. Frequency response.
4
45
40
35
30
25
500
200
180
160
140
120
100
80
T
P
= 25°C
A
V
T
= 5 V
CE
I
= 30 mA
T
T
T
= 75°C
= 50°C
= 25°C
F
A
A
A
= 25°C
(MAX.)
A
C
200
100
T
T
= 0°C
A
A
= -25°C
R
=
BE
I
= 20 mA
50
F
20
10
20
15
10
5
I
= 10 mA
F
I
60
100 kΩ
5
= 5 mA
= 2 mA
40
20
0
F
500 kΩ
I
2
1
F
0
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
3.0
0
2
5
10
20
50
V
– COLLECTOR-EMITTER VOLTAGE – V
V
– FORWARD VOLTAGE – V
I – FORWARD CURRENT – mA
F
CE
F
Figure 4. Forward current vs. forward voltage.
Figure 5. Current transfer ratio vs. forward
current.
Figure 6. Collector current vs. collector-
emitter voltage.
0.16
10-6
150
I
= 10 mA
I = 2.5 mA
C
I
V
= 10 mA
F
F
V
= 10 V
CE
= 5 V
10-7
0.14
CE
0.12
0.10
10-8
10-9
100
0.08
0.06
0.04
0.02
0
10-10
50
0
10-11
10-12
10-13
-55
-25
0
25
50
75
100
-30
0
20
40
60
80 100
-55 -25
0
25
50
75
100
T
– AMBIENT TEMPERATURE – °C
T
– AMBIENT TEMPERATURE – °C
T
– AMBIENT TEMPERATURE – °C
A
A
A
Figure 7. Relative current transfer ratio vs.
temperature.
Figure 8. Collector-emitter saturation
voltage vs. temperature.
Figure 9. Collector dark current vs.
temperature.
6
10
I
= 10 mA
T
= 25°C
F
A
V
T
= 5 V
CC
5
4
3
2
I
I
I
= 0.5 mA
= 1 mA
= 2 mA
= 25°C
5
C
C
C
A
tr
tf
2
1
I
I
= 3 mA
= 5 mA
C
C
1
0
0.5
0.02
0.05
0.1
0.2
0.5
0
2.5
5.0
7.5
10.0
12.5
R
– LOAD RESISTANCE – kΩ
I
– FORWARD CURRENT – mA
L
F
Figure 10. Response time vs. load resistance.
Figure 11. Collector-emitter saturation
voltage vs. forward current.
5
Test Circuit for Response Time
Test Circuit for Frequency Response
V
V
CC
CC
R
L
R
L
R
D
R
D
INPUT
OUTPUT
OUTPUT
~
INPUT
10%
90%
OUTPUT
ts
td
tr
tf
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (+65) 6756 2394
India, Australia, New Zealand: (+65) 6755 1939
Japan: (+81 3) 3335-8152 (Domestic/Interna-
tional), or 0120-61-1280 (Domestic Only)
Korea: (+65) 6755 1989
Singapore, Malaysia, Vietnam, Thailand,
Philippines, Indonesia: (+65) 6755 2044
Taiwan: (+65) 6755 1843
Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5989-0290EN
October 27, 2004
5989-1736EN
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