AT-32033-TR2G [AGILENT]
RF Small Signal Bipolar Transistor, 0.032A I(C), 1-Element, S Band, Silicon, NPN, LEAD FREE, PLASTIC, SMT, 3 PIN;
| 型号： | AT-32033-TR2G |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | RF Small Signal Bipolar Transistor, 0.032A I(C), 1-Element, S Band, Silicon, NPN, LEAD FREE, PLASTIC, SMT, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Agilent AT-32011, AT-32033
Low Current, High Performance
NPN Silicon Bipolar Transistor
Data Sheet
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
AT-32011: 1 dB NF, 14 dB GA
Description
Outline Drawing
Agilent’s AT-32011 and AT-32033 are
high performance NPN bipolar
transistors that have been
optimized for maximum ft at low
voltage operation, making them
ideal for use in battery powered
applications in wireless markets.
The AT-32033 uses the 3 lead
AT-32033: 1 dB NF, 12.5 dB GA
EMITTER COLLECTOR
• Characterized for End-Of-
Life Battery Use (2.7 V)
320
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-And-Reel Packaging
Option Available
BASE
EMITTER
SOT-143 (AT-32011)
• Lead-free Option Available
SOT-23, while the AT-32011 places
the same die in the higher
COLLECTOR
performance 4 lead SOT-143. Both
packages are industry standard, and
compatible with high volume
surface mount assembly techniques.
320
BASE
EMITTER
SOT-23 (AT-32033)
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a
multiplicity of tasks. The
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes these devices a
good fit for 900 MHz pager
applications. Voltage breakdowns
are high enough for use at 5 volts.
20 emitter finger interdigitated
geometry yields an easy to match
to and extremely fast transistor
with moderate power, low noise
resistance, and low operating
currents.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Agilent’s 10 GHz ft, 30
GHz fMAX Self-Aligned-Transistor
(SAT) process. The die are nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.2 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 2 mA
bias, with noise performance
techniques, and gold metalization
in the fabrication of these devices.
2
AT-32011, AT-32033 Absolute Maximum Ratings
Thermal Resistance[2]:
Absolute
Maximum[1]
θjc = 550 °C/W
Symbol
VEBO
VCBO
VCEO
IC
Parameter
Units
V
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation[2, 3]
Junction Temperature
Storage Temperature
1.5
11
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/°C for TC > 40°C.
V
V
5.5
mA
mW
°C
32
PT
200
Tj
150
TSTG
°C
-65 to 150
Electrical Specifications, TA = 25°C
AT-32011
AT-32033
Symbol
Parameters and Test Conditions
Units Min. Typ. Max. Min. Typ.
Max.
NF
Noise Figure
VCE = 2.7 V, IC = 2 mA
f = 0.9 GHz
f = 0.9 GHz
dB
dB
–
1.0[1]
12.5[1] 14[1]
70
1.3[1]
1.0[2]
11[2] 12.5[2]
70
1.3[2]
GA
Associated Gain
VCE = 2.7 V, IC = 2 mA
hFE
Forward Current Transfer Ratio
VCE = 2.7 V, IC = 2 mA
300
0.2
1.5
300
0.2
1.5
ICBO
IEBO
Collector Cutoff Current
VCB = 3 V
µA
µA
Emitter Cutoff Current
VEB = 1 V
Notes:
1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
1000 pF
1000 pF
RF IN
V
V
CC
BB
W = 10 L = 1870
W = 10 L = 1870
CKT A: 25 Ω
CKT B: 5 Ω
W = 30
L = 60
W = 30
L = 60
RF OUT
W = 10
CKT A: L = 105
CKT B: L = 850
W = 10
CKT A: L = 380
CKT B: L = 380
CKT A: W = 30 L = 50 x 2
CKT B: W = 30 L = 60
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
NOT TO SCALE
DIMENSIONS IN MILS
Figure 1. Test Circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain, stability, and a practical
synthesizable match.
3
Characterization Information, TA = 25°C
AT-32011
Typ.
AT-32033
Typ.
Symbol
Parameters and Test Conditions
Units
dBm
dB
P1dB
Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
13
16.5
24
13
15
G1dB
IP3
Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
Output Third Order Intercept Point (opt tuning)
VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
dBm
dB
24
2
|S21|E
Gain in 50 Ω System
VCE = 2.7 V, IC = 2 mA
f = 0.9 GHz
13
11.5
2
25
20
15
10
5
20
1.5
1
15
10
1 mA
2 mA
5 mA
10 mA
20 mA
1 mA
2 mA
5 mA
10 mA
20 mA
1 mA
2 mA
5 mA
10 mA
20 mA
0.5
0
5
0
0
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1
1.5
2
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 2. AT-32011 and AT-32033
Minimum Noise Figure vs. Frequency
and Current at VCE = 2.7 V.
Figure 3. AT-32011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE = 2.7 V.
Figure 4. AT-32033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE = 2.7 V.
20
15
10
20
15
10
20
15
10
5
2 mA
5
2 mA
5
2 mA
5 mA
10 mA
20 mA
5 mA
5 mA
0
10 mA
20 mA
10 mA
20 mA
0
0
-5
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 2.7 V.
Figure 6. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 2.7 V.
Figure 7. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 2.7 V.
4
AT-32011, AT-32033 Typical Performance
20
15
10
5
20
20
15
10
5
15
10
5
2 mA
5 mA
10 mA
20 mA
2 mA
5 mA
10 mA
20 mA
2 mA
5 mA
10 mA
20 mA
0
-5
0
0
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 8. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 5 V.
Figure 9. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 5 V.
Figure 10. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 5 V.
10
20
15
10
5
20
15
10
5
2 mA
5 mA
7.5
5
2.5
0
-2.5
-5
2 mA
5 mA
2 mA
5 mA
0
0
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 11. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 1 V.
Figure 12. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 1 V.
Figure 13. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 1 V.
25
20
15
10
5
2.5
2.0
1.5
1.0
0.5
0
25
20
15
10
5
2.5
25
20
15
2.0
1.5
1.0
0.5
0
Ga
Ga
10
NF
NF
2 mA
5 mA
10 mA
20 mA
5
0
0
0
-50
0
50
100
-50
0
50
100
0
0.5
1.0
1.5
2.0
2.5
TEMPERATURE (°C)
TEMPERATURE (°C)
FREQUENCY (MHz)
Figure 14. AT-32011 Noise Figure and
Associated Gain at VCE = 2.7 V,
IC = 2 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded).
Figure 15. AT-32033 Noise Figure and
Associated Gain at VCE = 2.7 V,
IC = 2 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded).
Figure 16. AT-32011 and AT-32033
Third Order Intercept vs. Frequency
and Bias at VCE = 2.7 V, with Optimal
Tuning.
5
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω
VCE = 1 V, IC = 1 mA
Freq.
GHz
S11
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.97
0.88
0.78
0.75
0.67
0.63
0.61
0.59
0.59
0.63
0.69
-11
-52
-86
11.09
10.13
8.67
8.35
6.35
5.25
4.75
3.48
1.77
-0.39
-2.39
3.59
3.21
2.71
2.62
2.08
1.83
1.73
1.49
1.23
0.96
0.76
172
141
117
112
89
77
70
57
40
18
0
-33.55
-20.85
-17.62
-17.27
-16.30
-16.28
-16.42
-16.86
-17.89
-18.40
-15.60
0.021
0.091
0.132
0.137
0.153
0.154
0.151
0.144
0.128
0.120
0.166
83
59
41
37
23
16
13
9
0.99
0.92
0.82
0.79
0.71
0.67
0.65
0.62
0.61
0.59
0.59
-5
-21
-32
-35
-45
-50
-53
-59
-68
-84
-104
-94
-127
-144
-155
-175
157
120
94
8
23
35
25
15
5
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA
MSG
S21
Γopt
Freq.
GHz
Fmin
dB
Rn
–
Mag
Ang
MAG
0.5[1]
0.9
1.8
0.42
0.71
1.37
1.80
0.79
0.70
0.53
0.55
26
54
119
158
0.44
0.35
0.18
0.08
2.4
-5
0
1
2
3
4
5
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
FREQUENCY (GHz)
Figure 17. AT-32011 Gains vs.
Frequency at VCE = 1 V, IC = 1 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω
VCE = 1 V, IC = 1 mA
Freq.
GHz
S11
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.97
0.81
0.61
0.56
0.41
0.36
0.34
0.34
0.38
0.46
0.51
-11
-52
-87
11.09
9.88
8.07
7.65
5.43
4.30
3.74
2.49
0.96
-0.84
-1.90
3.58
3.12
2.53
2.41
1.87
1.64
1.54
1.33
1.12
0.91
0.80
170
134
107
101
77
66
59
47
32
-32.75
-20.30
-17.57
-17.24
-16.61
-16.36
-16.05
-15.10
-12.77
-8.68
0.023
0.097
0.132
0.137
0.148
0.152
0.158
0.176
0.230
0.368
0.520
83
60
46
44
39
41
44
49
55
50
37
0.99
0.90
0.78
0.76
0.68
0.65
0.63
0.61
0.59
0.56
0.51
-5
-22
-33
-35
-42
-46
-49
-55
-65
-87
-114
-95
-136
-160
-177
154
119
81
15
5
56
-5.68
25
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA
15
5
Γopt
Freq.
GHz
Fmin
dB
Rn
–
MSG
Mag
Ang
MAG
0.5[1]
0.9
1.8
0.42
0.71
1.37
1.80
0.87
0.73
0.42
0.50
25
55
143
-162
0.48
0.34
0.11
0.07
MSG
S21
2.4
-5
0
1
2
3
4
5
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
FREQUENCY (GHz)
Figure 18. AT-32033 Gains vs.
Frequency at VCE = 1 V, IC = 1 mA.
6
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω
VCE = 2.7 V, IC = 2 mA
Freq.
GHz
S11
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.94
0.80
0.67
0.64
0.55
0.51
0.50
0.48
0.49
0.54
0.61
-13
-60
-97
16.67
15.10
12.97
12.48
10.04
8.77
8.13
6.75
4.97
2.73
6.81
5.69
4.45
4.21
3.18
2.75
2.55
2.18
1.77
1.37
1.10
170
136
112
107
86
76
70
58
43
22
4
-35.25
-23.07
-20.34
-20.05
-19.21
-19.04
-18.99
-18.84
-18.52
-16.98
-14.50
0.017
0.070
0.096
0.099
0.110
0.112
0.112
0.114
0.119
0.142
0.188
82
57
41
39
30
28
27
27
30
36
37
0.99
0.86
0.73
0.70
0.61
0.58
0.56
0.54
0.52
0.50
0.50
-6
-24
-35
-37
-45
-49
-52
-57
-64
-77
-95
-104
-137
-154
-165
176
150
116
92
0.83
30
20
10
0
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Γopt
Freq.
GHz
Fmin
dB
Rn
–
Mag
Ang
MSG
0.5[1]
0.9
1.8
0.57
0.78
1.25
1.57
0.69
0.60
0.42
0.44
22
51
117
159
0.30
0.25
0.14
0.08
MAG
S21
2.4
0
1
2
3
4
5
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
FREQUENCY (GHz)
Figure 19. AT-32011 Gains vs.
Frequency at VCE = 2.7 V, IC = 2 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω VCE = 2.7 V, IC = 2 mA
Freq.
GHz
S11
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.93
0.68
0.44
0.39
0.23
0.18
0.16
0.17
0.22
0.32
0.40
-13
-56
-86
16.61
14.29
11.48
10.88
8.16
6.89
6.19
4.91
6.77
5.18
3.75
3.50
2.56
2.21
2.04
1.76
1.47
1.19
1.02
167
127
101
96
76
66
60
50
36
18
4
-34.89
-23.10
-20.35
-19.91
-17.99
-16.89
-16.14
-14.70
-12.51
-9.19
0.018
0.070
0.096
0.101
0.126
0.143
0.156
0.184
0.237
0.347
0.471
82
61
55
54
55
57
57
58
57
51
40
0.99
0.83
0.71
0.70
0.64
0.62
0.61
0.60
0.58
0.55
0.51
-6
-22
-30
-31
-36
-39
-42
-47
-56
-73
-95
-93
-129
-156
-176
146
108
76
3.35
1.51
0.17
56
-6.54
30
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Γopt
20
10
0
Freq.
GHz
0.5[1]
0.9
1.8
2.4
Fmin
dB
Rn
–
Mag
Ang
MSG
0.57
0.78
1.25
1.57
0.77
0.63
0.32
0.40
15
49
136
-159
0.36
0.28
0.10
0.08
MAG
MSG
S21
0
1
2
3
4
5
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
FREQUENCY (GHz)
Figure 20. AT-32033 Gains vs.
Frequency at VCE = 2.7 V, IC = 2 mA.
7
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω
VCE = 2.7 V, IC = 20 mA
Freq.
GHz
S11
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.52
0.36
0.34
0.34
0.34
0.34
0.35
0.36
0.39
0.45
0.52
-49
-138
-168
-174
165
155
148
136
120
98
31.08
22.96
18.33
17.46
14.13
12.61
11.74
10.23
8.38
35.79
14.06
8.25
7.47
5.09
4.27
3.86
3.25
2.62
2.00
1.63
149
102
86
83
71
64
60
52
40
23
7
-37.78
-28.93
-25.15
-24.41
-21.35
-19.92
-19.08
-17.60
-15.86
-13.68
-11.93
0.013
0.036
0.055
0.060
0.086
0.101
0.111
0.132
0.161
0.207
0.253
72
62
64
64
63
61
60
57
51
42
32
0.83
0.40
0.31
0.30
0.28
0.28
0.27
0.27
0.26
0.24
0.23
-22
-42
-42
-42
-45
-49
-52
-58
-67
-84
-106
6.00
82
4.25
30
20
10
0
AT-32011 Typical Noise Parameters,
MSG
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA
Freq.
GHz
Fmin
dB
Rn
–
Γopt
Mag
Ang
MAG
0.5[1]
0.9
1.8
1.39
1.51
1.78
1.96
0.15
0.14
0.28
0.40
65
0.16
0.13
0.12
0.13
S21
MSG
105
-164
-142
2.4
0
1
2
3
4
5
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
FREQUENCY (GHz)
Figure 21. AT-32011 Gains vs.
Frequency at VCE = 2.7 V, IC = 20 mA.
VCE = 2.7 V, IC = 20 mA
S22
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω
Freq.
GHz
S11
S21
S12
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.50
0.16
0.08
0.07
0.06
0.07
0.08
0.11
0.15
0.21
0.26
-35
-52
-36
-31
12
31
40
48
53
52
48
29.84
19.58
14.81
13.96
10.71
9.31
8.50
7.16
5.62
31.03
9.53
5.50
4.99
3.43
2.92
2.66
2.28
1.91
1.56
1.35
137
94
81
78
66
60
56
48
37
20
6
-37.08
-25.35
-20.63
-19.66
-16.31
-14.75
-13.85
-12.32
-10.49
-8.11
0.014
0.054
0.093
0.104
0.153
0.183
0.203
0.242
0.299
0.393
0.482
77
77
75
74
69
66
63
59
52
41
29
0.79
0.53
0.50
0.50
0.49
0.48
0.47
0.46
0.43
0.39
0.33
-18
-20
-24
-25
-31
-35
-38
-44
-54
-71
-91
3.86
2.61
-6.34
30
20
10
0
MSG
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA
Γopt
Freq.
GHz
Fmin
dB
Rn
–
Mag
Ang
MAG
0.5[1]
0.9
1.8
1.39
1.51
1.78
1.96
0.15
0.12
0.28
0.46
45
0.28
0.22
0.14
0.22
100
-135
-107
S21
MSG
2.4
0
1
2
3
4
5
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
FREQUENCY (GHz)
Figure 22. AT-32033 Gains vs.
Frequency at VCE = 2.7 V, IC = 20 mA.
8
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω
VCE = 5 V, IC = 2 mA
Freq.
GHz
S11
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.95
0.81
0.68
0.64
0.55
0.51
0.49
0.47
0.47
0.52
0.59
-13
-57
-93
16.65
15.18
13.16
12.69
10.31
9.05
6.80
5.74
4.55
4.31
3.28
2.84
2.64
2.25
1.84
1.42
1.14
170
137
113
109
88
78
71
60
45
-35.84
-23.56
-20.72
-20.42
-19.49
-19.29
-19.22
-19.03
-18.72
-17.19
-14.73
0.016
0.066
0.092
0.095
0.106
0.109
0.109
0.112
0.116
0.138
0.183
82
58
43
40
32
29
28
29
31
37
38
0.99
0.87
0.74
0.72
0.63
0.60
0.58
0.55
0.54
0.52
0.51
-6
-23
-34
-36
-43
-47
-50
-55
-62
-75
-92
-100
-133
-150
-161
180
153
118
94
8.43
7.06
5.29
3.07
1.17
24
6
30
20
10
0
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Γopt
Freq.
GHz
Fmin
dB
Rn
–
MSG
S21
Mag
Ang
0.5[1]
0.9
1.8
0.52
0.75
1.26
1.60
0.73
0.63
0.44
0.45
20
49
111
153
0.34
0.28
0.16
0.09
MAG
2.4
0
1
2
3
4
5
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
FREQUENCY (GHz)
Figure 23. AT-32011 Gains vs.
Frequency at VCE = 5 V, IC = 2 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω
VCE = 5 V, IC = 2 mA
Freq.
GHz
S11
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.94
0.69
0.45
0.40
0.23
0.17
0.15
0.14
0.20
0.31
0.38
-13
-54
-82
16.56
14.34
11.62
11.03
8.33
6.73
5.21
3.81
3.56
2.61
2.25
2.08
1.79
1.50
1.21
1.03
167
128
102
98
77
68
62
51
37
19
5
-35.39
-23.74
-20.92
-20.35
-18.49
-17.39
-16.59
-15.14
-12.92
-9.55
0.017
0.065
0.090
0.096
0.119
0.135
0.148
0.175
0.226
0.333
0.457
82
62
56
55
56
58
59
60
59
53
42
0.99
0.85
0.73
0.72
0.66
0.65
0.63
0.62
0.61
0.59
0.55
-5
-21
-28
-30
-35
-37
-40
-44
-53
-70
-90
-89
-121
-147
-167
151
109
76
7.04
6.36
5.06
3.52
1.66
55
0.26
-6.80
30
20
10
0
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 5 V, IC = 2 mA
Γopt
Freq.
GHz
0.5[1]
0.9
Fmin
dB
Rn
–
MSG
Mag
Ang
MAG
0.52
0.75
1.26
1.60
0.79
0.65
0.33
0.39
15
48
127
-166
0.42
0.30
0.11
0.07
S21
MSG
1.8
2.4
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 24. AT-32033 Gains vs.
Frequency at VCE = 5 V, IC = 2 mA.
9
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω
VCE = 5 V, IC = 20 mA
Freq.
GHz
S11
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.58
0.35
0.31
0.30
0.29
0.30
0.30
0.32
0.35
0.41
0.48
-43
-128
-161
-167
170
158
151
138
121
98
31.28
23.51
18.93
18.06
14.74
13.22
12.35
10.85
8.99
36.64
14.99
8.84
8.00
5.46
4.58
4.15
3.49
2.82
2.15
1.76
151
103
87
84
72
65
61
53
42
25
9
-38.13
-29.05
-25.30
-24.57
-21.50
-20.06
-19.23
-17.77
-16.03
-13.85
-12.12
0.012
0.035
0.054
0.059
0.084
0.099
0.109
0.129
0.158
0.203
0.248
72
62
64
64
63
61
60
57
52
42
33
0.83
0.42
0.33
0.32
0.30
0.29
0.29
0.28
0.27
0.25
0.24
-21
-40
-40
-40
-44
-47
-50
-56
-64
-80
-100
6.64
4.90
83
30
20
10
0
AT-32011 Typical Noise Parameters,
MSG
Common Emitter, Zo = 50 Ω, 5 V, IC = 20 mA
Γopt
Freq.
GHz
Fmin
dB
Rn
–
Mag
Ang
MAG
0.5[1]
0.9
1.8
1.38
1.50
1.78
1.96
0.18
0.15
0.23
0.34
50
88
176
-156
0.20
0.16
0.13
0.12
S21
MSG
2.4
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 25. AT-32011 Gains vs.
Frequency at VCE = 5 V, IC = 20 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω
VCE = 5 V, IC = 20 mA
Freq.
GHz
S11
S21
S12
S22
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.55
0.20
0.13
0.12
0.10
0.09
0.10
0.11
0.13
0.18
0.22
-31
-44
-31
-28
-7
30.00
19.91
15.15
14.30
11.03
9.63
8.82
7.49
5.93
31.61
9.90
5.72
5.19
3.56
3.03
2.76
2.37
1.98
1.62
1.41
138
95
82
79
68
61
57
50
39
23
8
-37.72
-25.85
-21.01
-20.18
-16.77
-15.19
-14.33
-12.77
-10.90
-8.50
0.013
0.051
0.089
0.098
0.145
0.174
0.192
0.230
0.285
0.376
0.465
78
77
75
74
69
66
64
60
54
43
31
0.81
0.56
0.53
0.53
0.52
0.51
0.50
0.49
0.47
0.42
0.37
-16
-19
-22
-23
-30
-33
-36
-42
-51
-67
-86
5
13
25
36
42
43
4.19
2.98
-6.65
30
20
10
0
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 5 V, IC = 20 mA
Γopt
Freq.
GHz
0.5[1]
0.9
Fmin
dB
Rn
–
MAG
Mag
Ang
1.38
1.50
1.78
1.96
0.25
0.19
0.21
0.39
35
85
-150
-114
0.30
0.23
0.14
0.19
MSG
S21
1.8
2.4
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 26. AT-32033 Gains vs.
Frequency at VCE = 5 V, IC = 20 mA.
10
Ordering Information
Part Numbers
No. of Devices Comments
AT-32011-BLK
AT-32011-BLKG
AT-32011-TR1
AT-32011-TR1G
AT-32011-TR2
AT-32011-TR2G
AT-32033-BLK
100
100
Bulk
Bulk
AT-32033-BLKG
AT-32033-TR1
AT-32033-TR1G
AT-32033-TR2
AT-32033-TR2G
3000
3000
10000
10000
7" Reel
7" Reel
13" Reel
13" Reel
Note: Order part number with a “G” suffix if lead-free option is desired.
Package Dimensions
SOT-23 Plastic Package
SOT-143 Plastic Package
e2
e2
e1
e1
B1
E
E1
E1
E
XXX
XXX
e
L
L
B
C
B
C
e
DIMENSIONS (mm)
DIMENSIONS (mm)
D
D
SYMBOL
MIN.
0.79
0.000
0.37
0.086
2.73
1.15
0.89
1.78
0.45
2.10
0.45
MAX.
1.20
0.100
0.54
0.152
3.13
1.50
1.02
2.04
0.60
2.70
0.69
SYMBOL
MIN.
0.79
0.013
0.36
0.76
0.086
2.80
1.20
0.89
1.78
0.45
2.10
0.45
MAX.
1.097
0.10
0.54
0.92
0.152
3.06
1.40
1.02
2.04
0.60
2.65
0.69
A
A1
B
A
A1
B
A
A
C
B1
C
D
A1
E1
e
A1
D
e
E1
e
e1
e2
E
Notes:
e1
e2
E
XXX-package marking
Notes:
Drawings are not to scale
L
XXX-package marking
Drawings are not to scale
L
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (65) 6756 2394
India, Australia, New Zealand: (65) 6755 1939
Japan: (+81 3) 3335-8152(Domestic/International), or
0120-61-1280(Domestic Only)
Korea: (65) 6755 1989
Singapore, Malaysia, Vietnam, Thailand, Philippines,
Indonesia: (65) 6755 2044
Taiwan: (65) 6755 1843
Data subject to change.
Copyright © 2005 Agilent Technologies, Inc.
Obsoletes 5965-8920E
March 28, 2005
5989-2643EN
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