4N25-300 [AGILENT]
Transistor Output Optocoupler, 1-Element, 2500V Isolation, SMD, DIP-6;
| 型号： | 4N25-300 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Transistor Output Optocoupler, 1-Element, 2500V Isolation, SMD, DIP-6 |
| 文件： | 总6页 (文件大小：387K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Agilent 4N25
Phototransistor Optocoupler
General Purpose Type
Data Sheet
Features
•
Response time (t : typ., 3 µs at
r
V
= 10 V, I = 2 mA, R = 100 Ω)
CE
C
L
•
Current Transfer Ratio
(CTR: min. 20% at I = 10 mA,
F
V
CE
= 10 V)
Description
Ordering Information
The 4N25 is an optocoupler for
general purpose applications. It
contains a light emitting diode
optically coupled to a photo-
transistor. It is packaged in a 6-pin
DIP package and available in wide-
lead spacing option and lead bend
Specify part number followed by
Option Number (if desired).
•
Input-output isolation voltage
(V = 2500 Vrms)
iso
•
•
•
•
Dual-in-line package
UL approved
CSA approved
IEC/EN/DIN EN 60747-5-2
approved
Optionsavailable:
– Leads with 0.4" (10.16 mm)
spacing (W00)
– Leads bends for surface
mounting (300)
– Tape and reel for SMD (500)
– IEC/EN/DIN EN 60747-5-2
approvals (060)
4N25-XXXE
Lead Free
Option Number
SMD option. Response time, t , is
r
•
typically 3 µs and minimum CTR is
20% at input current of 10 mA.
000 = No Options
060 = IEC/EN/DIN EN 60747-5-2
Option
W00 = 0.4" Lead Spacing Option
300 = Lead Bend SMD Option
500 = Tape and Reel Packaging
Option
Functional Diagram
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
Schematic
Applications
•
•
I/O interfaces for computers
System appliances, measuring
instruments
6 5 4
I
1
+
F
6
ANODE
BASE
V
•
Signal transmission between
circuits of different potentials and
impedances
F
–
2
CATHODE
I
C
5
4
COLLECTOR
EMITTER
1
2
3
1. ANODE
2. CATHODE
3. NC
4. EMITTER
5. COLLECTOR
6. BASE
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
Package Outline Drawings
4N25-000E
7.3 0.5
(0.287)
7.62 0.3
(0.3)
3.5 0.5
(0.138)
LEAD FREE
6.5 0.5
(0.256)
A 4N25
0.5 TYP.
(0.02)
Y Y WW
ANODE
3.3 0.5
(0.13)
2.8 0.5
(0.110)
DATE CODE *1
0.26
(0.010)
0.5 0.1
(0.02)
2.54 0.25
(0.1)
7.62 ~ 9.98
DIMENSIONS IN MILLIMETERS AND (INCHES)
4N25-060E
7.3 0.5
(0.287)
7.62 0.3
(0.3)
3.5 0.5
(0.138)
LEAD FREE
6.5 0.5
(0.256)
A 4N25 V
0.5 TYP.
(0.02)
Y Y WW
ANODE
3.3 0.5
(0.13)
2.8 0.5
(0.110)
DATE CODE *1
0.26
(0.010)
0.5 0.1
(0.02)
2.54 0.25
(0.1)
7.62 ~ 9.98
DIMENSIONS IN MILLIMETERS AND (INCHES)
4N25-W00E
7.3 0.5
(0.287)
7.62 0.3
(0.3)
3.5 0.5
(0.138)
LEAD FREE
6.5 0.5
(0.256)
A 4N25
6.9 0.5
(0.272)
Y Y WW
ANODE
2.8 0.5
(0.110)
2.3 0.5
(0.09)
0.26
(0.010)
0.5 0.1
(0.02)
2.54 0.25
(0.1)
DATE CODE *1
10.16 0.5
(0.4)
DIMENSIONS IN MILLIMETERS AND (INCHES)
4N25-300E
7.3 0.5
(0.287)
7.62 0.3
(0.3)
3.5 0.5
(0.138)
LEAD FREE
6.5 0.5
(0.256)
A 4N25
0.35 0.25
(0.014)
0.26
Y Y WW
(0.010)
1.0 0.25
(0.39)
ANODE
1.2 0.1
(0.047)
2.54 0.25
(0.1)
10.16 0.3
(0.4)
DATE CODE *1
DIMENSIONS IN MILLIMETERS AND (INCHES)
2
30 seconds
Solder Reflow Temperature Profile
1) One-time soldering reflow is
recommended within the
260°C (Peak Temperature)
250°C
217°C
200°C
condition of temperature and
time profile shown at right.
150°C
2) When using another soldering
method such as infrared ray
lamp, the temperature may rise
partially in the mold of the
60 sec
25°C
60 ~ 150 sec
90 sec
Time (sec)
60 sec
device. Keep the temperature on
the package of the device within
the condition of (1) above.
Absolute Maximum Ratings
Storage Temperature, T
–55˚C to +150˚C
–55˚C to +100˚C
260˚C for 10 s
S
Operating Temperature, T
A
Lead Solder Temperature, max.
(1.6 mm below seating plane)
Average Forward Current, I
80 mA
6 V
F
Reverse Input Voltage, V
R
Input Power Dissipation, P
150 mW
100 mA
30 V
I
Collector Current, I
C
Collector-Emitter Voltage, V
Emitter-Collector Voltage, V
CEO
ECO
7 V
Collector-Base Voltage, V
70 V
CBO
Collector Power Dissipation
Total Power Dissipation
150 mW
250 mW
2500 Vrms
Isolation Voltage, V (AC for 1 minute, R.H. = 40 ~ 60%)
iso
3
Electrical Specifications (T = 25˚C)
A
Parameter
Symbol
Min.
Typ.
1.2
–
Max.
1.5
10
–
Units
V
Test Conditions
I = 10 mA
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
V
F
–
F
I
R
–
µA
pF
nA
V
V = 4 V
R
C
t
–
50
–
V = 0, f = 1 KHz
I
–
50
–
V = 10 V, I = 0
CE F
CEO
Collector-Emitter Breakdown Voltage BV
Emitter-Collector Breakdown Voltage BV
30
7
–
I = 0.1 mA, I = 0
C F
CEO
ECO
CBO
–
–
V
I = 10 µA, I = 0
E F
I = 0.1 mA, I = 0
C F
Collector-Base Breakdown Voltage
Collector Current
BV
70
2
–
–
V
I
C
–
–
mA
%
I = 10 mA
F
*Current Transfer Ratio
Collector-Emitter Saturation Voltage
Response Time (Rise)
CTR
20
–
–
–
V
CE
= 10 V
V
CE(sat)
0.1
3
0.5
–
V
I = 50 mA, I = 2 mA
F C
t
r
–
µs
µs
Ω
V = 10 V, I = 2 mA
CE C
Response Time (Fall)
t
f
–
3
–
R = 100 Ω
L
10
11
Isolation Resistance
R
5 x 10
1 x 10
–
DC 500 V
40 ~ 60% R.H.
iso
f
Floating Capacitance
C
–
1
–
pF
V = 0, f = 1 MHz
I
I
F
C
* CTR =
x 100%
100
80
500
200
T
T
T
= 75°C
= 50°C
= 25°C
A
A
A
200
100
T
T
= 0°C
A
A
150
100
50
= -25°C
50
60
20
10
40
5
20
0
2
1
0
-55 -25
0
25 50 75 100 125
0
0.5
1.0
1.5
2.0
2.5
3.0
-55 -25
0
25 50 75 100 125
T
– AMBIENT TEMPERATURE – °C
V – FORWARD VOLTAGE – V
F
T
– AMBIENT TEMPERATURE – °C
A
A
Figure 1. Forward current vs. temperature.
Figure 2. Collector power dissipation vs.
temperature.
Figure 3. Forward current vs. forward voltage.
4
15
10
5
50
40
30
20
300
200
P
(MAX.)
V
= 10 V
T
= 25°C
I
I
= 40 mA
= 30 mA
= 20 mA
I = 10 mA
F
CE
C
CE
= 25°C
A
F
F
V
= 10 V
T
A
I
I
F
F
100
0
R
BE
=
= 10 mA
= 5 mA
10
0
I
F
500 kΩ
100 kΩ
0
0
5
10
15
0.1 0.2 0.5
1
2
5
10 20
50 100
-55 -25
0
25
50
75
100
I
– FORWARD CURRENT – mA
V
– COLLECTOR-EMITTER VOLTAGE – V
T
– AMBIENT TEMPERATURE – °C
F
CE
A
Figure 4. Current transfer ratio vs. forward
current.
Figure 5. Collector current vs. collector-
emitter voltage.
Figure 6. Relative current transfer ratio vs.
temperature.
10-6
5
100
0.3
I
I
= 50 mA
= 2 mA
V
I
= 10 V
tf
tr
F
C
CE
= 2 mA
V
= 10 V
50
CE
10-7
5
C
td
T
= 25°C
A
20
10
10-58
0.2
10-9
5
5
10-10
5
2
1
ts
0.1
0
10-11
5
0.5
10-12
5
0.2
0.1
10-13
0.05 0.1 0.2 0.5
1
2
5
10 20 50
-55
-25
0
25
50
75
100
-55 -25
0
20 40 80 100 125
R
– LOAD RESISTANCE – kΩ
T
– AMBIENT TEMPERATURE – °C
T
– AMBIENT TEMPERATURE – °C
L
A
A
Figure 7. Collector-emitter saturation
voltage vs. temperature.
Figure 8. Collector dark current vs.
temperature.
Figure 9. Response time vs. load resistance.
7
5
V
= 5 V
T
= 25°C
CE
= 2 mA
A
I
C
6
5
T
= 25°C
0
-5
A
4
3
2
1
0
R
= 10 kΩ
L
-10
R
= 1 kΩ
L
R
= 100 Ω
L
-15
-20
0
5
10
15
20
25
30
0.5
1
2
5
10 20 50 100 200 500
I
– FORWARD CURRENT – mA
f – FREQUENCY – kHz
F
Figure 10. Frequency response.
Figure 11. Collector-emitter saturation
voltage vs. forward current.
5
Test Circuit for Frequency Response
Test Circuit for Response Time
V
V
CC
CC
R
R
L
L
R
R
D
D
INPUT
OUTPUT
OUTPUT
~
INPUT
10%
90%
OUTPUT
td
ts
tr
tf
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (+65) 6756 2394
India, Australia, New Zealand: (+65) 6755 1939
Japan: (+81 3) 3335-8152 (Domestic/Interna-
tional), or 0120-61-1280 (Domestic Only)
Korea: (+65) 6755 1989
Singapore, Malaysia, Vietnam, Thailand,
Philippines, Indonesia: (+65) 6755 2044
Taiwan: (+65) 6755 1843
Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5989-0292EN
November 3, 2004
5989-1733EN
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