MAT01N [ADI]

Matched Monolithic Dual Transistor; 匹配的单片双晶体管


型号：	MAT01N
厂家：	ADI
描述：	Matched Monolithic Dual Transistor 匹配的单片双晶体管晶体晶体管
文件：	总8页 (文件大小：122K)
中文：	中文翻译
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Matched Monolithic

Dual Transistor

MAT01

FEATURES

PIN CONNECTION

Low V_OS(V_BEMatch): 40 ␮V typ, 100 ␮V max

Low TCV_OS: 0.5 ␮V/؇C max

High h_FE: 500 min

TO-78

(H Suffix)

Excellent h_FELinearity from 10 nA to 10 mA

Low Noise Voltage: 0.23 ␮V p-p—0.1 Hz to 10 Hz

High Breakdown: 45 V min

Available in Die Form

PRODUCT DESCRIPTION

The MAT01 is a monolithic dual NPN transistor. An exclusive

Silicon Nitride “Triple-Passivation” process provides excellent

stability of critical parameters over both temperature and time.

Matching characteristics include offset voltage of 40 µV, tem-

perature drift of 0.15 µV/°C, and h_FEmatching of 0.7%. Very

high h_FEis provided over a six decade range of collector current,

including an exceptional h_FEof 590 at a collector current of only

10 nA. The high gain at low collector current makes the

MAT01 ideal for use in low power, low level input stages.

NOTE: Substrate is connected to case.

BURN-IN CIRCUIT

REV. A

Information furnished by Analog Devices is believed to be accurate and

reliable. However, no responsibility is assumed by Analog Devices for its

use, nor for any infringements of patents or other rights of third parties

which may result from its use. No license is granted by implication or

otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 617/329-4700

Fax: 617/326-8703

World Wide Web Site: http://www.analog.com

MAT01–SPECIFICATIONS

(@ V_CB= 15 V, I_C= 10 ␮A, T_A= 25؇C, unless otherwise noted.)

ELECTRICAL CHARACTERISTICS

MAT01AH

Typ

MAT01GH

Typ Min

Parameter

Symbol

Conditions

Min

Max

Min

Units

Breakdown Voltage

Offset Voltage

Offset Voltage Stability

First Month

Long Term

Offset Current

Bias Current

BV_CEO

V_OS

I_C= 100 µA

0.04 0.1

0.10 0.5

V_OS/Time

(Note 1)

(Note 2)

2.0

0.2

0.1

2.0

0.2

µV/Mo

I_OS

I_B

0.6

0.2

3.2

Current Gain

h_FE

I_C= 10 nA

I_C= 10 µA

I_C= 10 mA

I_C= 10 µA

590

770

840

0.7

0.8

430

560

610

1.0

1.2

500

250

Current Gain Match

∆h_FE

3.0

8.0

100 nA ≤ I_C≤ 10 mA

Low Frequency Noise

Voltage

Broadband Noise

Voltage

e_np-p

e_nrms

e_n

0.1 Hz to 10 Hz³

1 Hz to 10 kHz

0.23 0.4

0.60

0.23 0.4

0.60

µV p-p

µV rms

Noise Voltage

Density

f_O= 10 Hz³

7.0

6.1

6.0

0.5

9.0

7.6

7.5

3.0

7.0

6.1

6.0

0.8

9.0

7.6

7.5

8.0

nV/√Hz

µV/V

f_O= 100 Hz³

f_O= 1000 Hz³

0 ≤ V_CB≤ 30 V

Offset Voltage Change

Offset Current Change

Collector-Base

Leakage Current

Collector-Emitter

Leakage Current

Collector-Collector

Leakage Current

Collector Saturation

Voltage

∆V_OS/∆V_CB

∆I_OS/∆V_CB

pA/V

I_CBO

I_CES

V_CB= 30 V, I_E= 0⁴

200

400

V_CE= 30 V, V_BE= 0^{4, 5}

200

I_CC

V_CE(SAT)

V_CC= 30 V⁵

MHz

I_B= 0.1 mA, I_C= 1 mA

I_B= 1 mA, I_C= 10 mA

V_CE= 10 V, I_C= 10 mA

V_CB= 15 V, I_E= 0

0.12 0.20

0.12 0.25

0.8

450

2.8

0.8

450

2.8

Gain-Bandwidth Product f_T

Output Capacitance

Collector-Collector

Capacitance

C_OB

C_CC

V_CC= 0

8.5

(@ V = 15 V, I = 10 ␮A, –55؇C ≤ T ≤ +125؇C, unless otherwise noted.)

ELECTRICAL CHARACTERISTICS

MAT01AH

Typ

MAT01GH

Typ

Parameter

Symbol

Conditions

Min

Max

Min

Units

Offset Voltage

Average Offset

Voltage Drift

Offset Current

Average Offset

Current Drift

V_OS

0.06 0.15

0.14 0.70

TCV_OS

I_OS

(Note 6)

(Note 7)

0.15 0.50

0.35 1.8

µV/°C

0.9

8.0

1.5

15.0

TCI_OS

Ι_Β

150

130

pA/°C

Bias Current

Current Gain

h_FE

167

400

300

Collector-Base

Leakage Current

Collector-Emitter

Leakage Current

Collector-Collector

Leakage Current

I_CBO

T_A= 125°C, V_CB= 30 V,

I_E= 0⁴

200

400

I_CES

I_CC

T_A= 125°C, V_CE= 30 V,

V_BE= 0^{4, 6}

300

200

T_A= 125°C, V_CC= 30 V,

(Note 6)

–2–

REV. A

MAT01

(@ V = 15 V and I = 10 ␮A, T = +25؇C, unless otherwise noted.)

TYPICAL ELECTRICAL CHARACTERISTICS

MAT01N

Typical

Parameter

Symbol

Conditions

Units

Average Offset Voltage Drift

Average Offset Current Drift

Collector-Emitter-Leakage

Current

TCV_OS

TCI_OS

0.35

µV/°C

pA/°C

I_CES

V_CE= 30 V, V_BE= 0

Collector-Base-Leakage

Current

Gain Bandwidth Product

Offset Voltage Stability

I_CBO

f_T

∆V_OS/T

V_CB= 30 V, I_E= 0

MHz

µV/Mo

V_CE= 10 V, I_C= 10 mA

First Month (Note 1)

Long-Term (Note 2)

450

2.0

0.2

NOTES

¹Exclude first hour of operation to allow for stabilization.

²Parameter describes long-term average drift after first month of operation.

³Sample tested.

⁴The collector-base (I_CBO) and collector-emitter (I_CES) leakage currents may be

reduced by a factor of two to ten times by connecting the substrate (package) to

a potential which is lower than either collector voltage.

⁵I_CCand I_CESare guaranteed by measurement of I_CBO

V_OS

⁶Guaranteed by V_OStest (TCV_OS

for V_OSӶ V_BE) T = 298°K for T_A= 25°C.

⁷Guaranteed by I_OStest limits over temperature.

Specifications subject to change without notice.

(@ V = 15 V, I = 10 ␮A, T = +25؇C, unless otherwise noted.)

WAFER TEST LIMITS

MAT01N

Limits

Parameter

Symbol

Conditions

Units

Breakdown Voltage

Offset Voltage

Offset Current

Bias Current

Current Gain

Current Gain Match

Offset Voltage Change

Offset Current Change

Collector Saturation Voltage

BV_CEO

V_OS

I_OS

I_B

h_FE

I_C= 100 µA

V min

mV max

nA max

min

0.5

3.2

250

8.0

∆h_FE

% max

∆V_OS/∆V_CB

V_{CE (SAT)}

0 ≤ V_CB≤ 30 V

I_B= 0.1 mA, I_C= 1 mA

µV/V max

pA/V max

V max

0.25

NOTE

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not

guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.

REV. A

–3–

MAT01

ABSOLUTE MAXIMUM RATINGS¹

Storage Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . .+300°C

DICE Junction Temperature . . . . . . . . . . . . –65°C to +150°C

Collector-Base Voltage (BV_CBO

MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V

Collector-Emitter Voltage (BV_CEO

MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V

Collector-Collector Voltage (BV_CC

MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V

Emitter-Emitter Voltage (BV_EE

MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 V

)

NOTES

¹Absolute maximum ratings apply to both DICE and packaged devices.

²Application of reverse bias voltages in excess of rating shown can result in

degradation of h_FEand h_FEmatching characteristics. Do not attempt to measure

BV_EBOgreater than the 5 V rating shown.

)

³Rating applies to applications using heat sinking to control case temperature.

Derate linearity at 16.4 mW/°C for case temperatures above 40°C.

⁴Rating applies to applications not using heat sinking; device in free air only. Derate

linearity at 6.3 mW/°C for ambient temperatures above 70°C.

Emitter-Base Voltage (BV_EBO

)

. . . . . . . . . . . . . . . . . . . . . 5 V

Collector Current (I_C) . . . . . . . . . . . . . . . . . . . . . . . . . .25 mA

Emitter Current (I_E) . . . . . . . . . . . . . . . . . . . . . . . . . . 25 mA

Total Power Dissipation

Case Temperature ≤ 40°C³. . . . . . . . . . . . . . . . . . . . 1.8 W

Ambient Temperature ≤ 70°C⁴. . . . . . . . . . . . . . . 500 mW

Operating Ambient Temperature . . . . . . . . . –55°C to +125°C

Operating Junction Temperature . . . . . . . . . –55°C to +150°C

ORDERING GUIDE¹

V_OSmax

(T_A= +25؇C) Range

Temperature

Package

Option

Model

MAT01AH²

MAT01GH

0.1 mV

0.5 mV

–55°C to +125°C TO-78

NOTES

¹Burn-in is available on commercial and industrial temperature range parts in

TO-can packages.

²For devices processed in total compliance to MIL-STD-883, add/883 after part

number. Consult factory for 883 data sheet.

DICE CHARACTERISTICS

1. COLLECTOR (1)

2. BASE (1)

3. EMITTER (1)

5. EMITTER (2)

6. BASE (2)

7. COLLECTOR (2)

DIE SIZE 0.035 × 0.025 inch, 875 sq. mils

(0.89 × 0.64 mm, 0.58 sq. mm)

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the MAT01 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. A

–4–

MAT01

Figure 7. Base-Emitter Voltage

vs. Collector Current

Figure 1. Offset Voltage

vs. Temperature

Figure 4. Offset Voltage vs. Time

Figure 8. Saturation Voltage

vs. Collector Current

Figure 5. Current Gain

vs. Temperature

Figure 2. Current Gain

vs. Collector Current

Figure 9. Gain-Bandwidth

vs. Collector Current

Figure 6. Noise Current Density

Figure 3. Noise Voltage

REV. A

–5–

MAT01

MAT01 TEST CIRCUITS

Figure 10. MAT01 Matching Measurement Circuit

Figure 11. MAT01 Noise Measurement Circuit

REV. A

–6–

MAT01

APPLICATION NOTES

Application of reverse bias voltages to the emitter-base junctions

in excess of ratings (5 V) may result in degradation of h_FEand

_FEmatching characteristics. Circuit designs should be checked

to ensure that reverse bias voltages above 5 V cannot be applied

during such transient conditions as at circuit turn-on and

turn-off.

Stray thermoelectric voltages generated by dissimilar metals at

the contacts to the input terminals can prevent realization of the

predicted drift performance. Both input terminals should be

maintained at the same temperature, preferably close to the tem-

perature of the device’s package.

TYPICAL APPLICATIONS

Figure 12. Precision Reference

Figure 14. Precision Operational Amplifiers

Figure 13. Basic Digital Thermometer Readout in

Degrees Kelvin (°K)

Figure 15. Digital Thermometer with Readout in °C

REV. A

–7–

MAT01

OUTLINE DIMENSIONS

Dimensions shown in inches and (mm).

H-06A

6-Lead Metal Can (TO-78)

REFERENCE PLANE

0.750 (19.05)

0.500 (12.70)

0.185 (4.70)

0.165 (4.19)

0.250 (6.35) MIN

0.050 (1.27) MAX

0.100 (2.54) BSC

0.160 (4.06)

0.110 (2.79)

0.045 (1.14)

0.027 (0.69)

0.200

(5.08)

BSC

0.100

(2.54)

BSC

0.019 (0.48)

0.016 (0.41)

0.034 (0.86)

0.027 (0.69)

0.040 (1.02) MAX

0.021 (0.53)

0.016 (0.41)

0.045 (1.14)

0.010 (0.25)

45° BSC

BASE & SEATING PLANE

REV. A

–8–

MAT01N [ADI]

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