EVAL-ADXRS450Z-S [ADI]

HIgh Performance, Digital Output Gyroscope; 高性能数字输出陀螺仪
EVAL-ADXRS450Z-S
型号: EVAL-ADXRS450Z-S
厂家: ADI    ADI
描述:

HIgh Performance, Digital Output Gyroscope
高性能数字输出陀螺仪

文件: 总28页 (文件大小:498K)
中文:  中文翻译
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High Performance,  
Digital Output Gyroscope  
Preliminary Technical Data  
ADXRS450  
FEATURES  
GENERAL DESCRIPTION  
Complete rate gyroscope on a single chip  
300°/sec angular rate sensing  
The ADXRS450 is an angular rate sensor (gyroscope) intended  
for industrial, medical, instrumentation, stabilization, and other  
high performance applications. An advanced, differential, quad  
sensor design rejects the influence of linear acceleration, enabling  
the ADXRS450 to operate in exceedingly harsh environments  
where shock and vibration are present.  
High vibration rejection over a wide frequency range  
Excellent 25°/hr null offset stability  
Internally temperature compensated  
2000 g powered shock survivability  
SPI digital output with 16-bit data-word  
Low noise and low power  
3.3 V and 5V operation  
−40°C to +105°C operation  
Ultra small, light, and RoHS compliant  
Two package options  
The ADXRS450 utilizes an internal, continuous self-test archi-  
tecture. The integrity of the electromechanical system is checked  
by applying a high frequency electrostatic force to the sense  
structure to generate a rate signal that can be differentiated from  
the baseband rate data and internally analyzed.  
Low cost SOIC_CAV package for yaw rate (Z-axis) response  
Innovative ceramic vertical mount package, which can be  
oriented for pitch, roll, or yaw response  
The ADXRS450 is capable of sensing angular rate of up to  
±±00ꢀ°sec. Angular rate data is presented as a 16-bit word, as  
part of a ±2-bit SPI message.  
APPLICATIONS  
Rotation sensing medical applications  
Rotation sensing industrial and instrumentation  
High performance platform stabilization  
The ADXRS450 is available in a cavity plastic 16-lead SOIC  
(SOIC_CAV) and an SMT-compatible vertical mount package  
(LCC_V), and is capable of operating across both a wide voltage  
range (±.± V to 5 V) and temperature range (−40ꢀC to +105ꢀC).  
FUNCTIONAL BLOCK DIAGRAM  
V
CP5  
X
HIGH VOLTAGE  
GENERATION  
P
DD  
ADXRS450  
LDO  
REGULATOR  
DV  
AV  
DD  
DD  
HV DRIVE  
CLOCK  
ALU  
PHASE  
LOCKED  
LOOP  
DIVIDER  
DECIMATION  
FILTER  
AMPLITUDE  
DETECT  
MOSI  
MISO  
SCLK  
CS  
TEMPERATURE  
CALIBRATION  
BAND-PASS  
FILTER  
SPI  
INTERFACE  
DEMOD  
ADC 12  
FAULT  
DETECTION  
Q FILTER  
Q DAQ  
P DAQ  
Z-AXIS ANGULAR  
RATE SENSOR  
DV  
SS  
SS  
ST  
CONTROL  
P
SS  
AV  
EEPROM  
Figure 1.  
Rev. PrA  
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
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Trademarks and registeredtrademarks are theproperty of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.461.3113  
www.analog.com  
©2010 Analog Devices, Inc. All rights reserved.  
 
ADXRS450  
Preliminary Technical Data  
TABLE OF CONTENTS  
Features .............................................................................................. 1  
Applications Circuits ................................................................. 10  
ADXRS450 Signal Chain Timing............................................. 10  
SPI Communication Protocol....................................................... 12  
Command°response................................................................... 12  
SPI Communications Characteristics...................................... 1±  
SPI Applications.......................................................................... 14  
SPI Rate Data Format..................................................................... 19  
Memory Map and Registers.......................................................... 20  
Memory Map .............................................................................. 20  
Memory Register Definitions ................................................... 21  
Package Orientation and Layout information............................ 2±  
Solder Profile .............................................................................. 25  
Package Marking Codes ............................................................ 26  
Outline Dimensions....................................................................... 27  
Ordering Guide .......................................................................... 28  
Applications....................................................................................... 1  
General Description......................................................................... 1  
Functional Block Diagram .............................................................. 1  
Specifications..................................................................................... ±  
Absolute Maximum Ratings............................................................ 4  
Thermal Resistance ...................................................................... 4  
Rate Sensitive Axis........................................................................ 4  
ESD Caution.................................................................................. 4  
Pin Configurations and Function Descriptions ........................... 5  
Typical Performance Characteristics ............................................. 7  
Theory of Operation ........................................................................ 9  
Continuous Self-Test.................................................................... 9  
Applications Information .............................................................. 10  
Calibrated Performance............................................................. 10  
Mechanical Considerations for Mounting.............................. 10  
Rev. PrA | Page 2 of 28  
Preliminary Technical Data  
SPECIFICATIONS  
ADXRS450  
Specification conditions @ TA = TMIN to TMAX, PDD = 5 V, angular rate = 0ꢀ°sec, bandwidth = 80 Hz ±1 g, continuous self-test on.  
Table 1.  
Parameter  
Test Conditions/Comments  
Full-scale range  
Symbol  
Min  
300  
Typ  
Max  
Unit  
MEASUREMENT RANGE  
SENSITIVITY  
FSR  
400  
°/sec  
See Figure 2  
Nominal Sensitivity  
Sensitivity Tolerance  
Nonlinearity1  
80  
3
0.05  
3
LSB/°/sec  
%
% FSR rms  
%
Best fit straight line  
0.25  
Cross-Axis Sensitivity2  
NULL  
Null Accuracy  
3
°/sec  
NOISE PERFORMANCE  
Rate Noise Density  
LOW-PASS FILTER  
Cut-Off (−3dB) Frequency  
Group Delay3  
TA = 25°C  
0.015  
°/sec/√Hz  
f0/200, see Figure 6  
f = 0 Hz  
fLP  
tLP  
80  
4
Hz  
ms  
3.25  
4.75  
SHOCK AND VIBRATION IMMUNITY  
Sensitivity to Linear Acceleration  
Vibration Rectification  
SELF-TEST  
DC to 5 kHz  
0.03  
0.003  
°/sec/g  
°/sec/g2  
See Continuous Self-Test  
Magnitude  
2559  
500  
LSB  
LSB  
LSB  
Hz  
Fault Register Threshold  
Sensor Data Status Threshold  
Frequency  
Compared to LOCST data  
Compared to LOCST data  
f0/32  
2239  
1279  
2879  
3839  
fST  
ST Low-Pass Filter  
−3 dB Frequency  
Group Delay3  
f0/800, see Figure 7  
2
64  
Hz  
ms  
52  
76  
SPI COMMUNICATIONS  
Clock Frequency  
Voltage Input High  
Voltage Input Low  
Output Voltage Low  
Output Voltage High  
8.08  
MHz  
V
MOSI, CS, SCLK  
0.85 × PDD  
−0.3  
PDD + 0.3  
PDD × 0.15  
0.5  
MOSI, CS SCLK  
V
MISO, current = 3 mA  
MISO, current = −2 mA  
V
V
PDD − 0.5  
Pull up Current  
CS, PDD = 3.3 V, CS = 0.75 × PDD  
CS, PDD = 5 V, CS = 0.75 × PDD  
See Memory Register Definitions  
50  
70  
200  
300  
μA  
μA  
MEMORY REGISTERS  
Temperature Sensor  
Value at 45°C  
0
5
LSB  
LSB/°C  
Scale Factor  
Quad, ST, Rate, DNC Registers  
Scale Factor  
80  
LSB/°/sec  
POWER SUPPLY  
Supply Voltage  
Quiescent Supply Current  
Turn-On Time  
PDD  
IDD  
3.15  
−40  
5.25  
10.0  
V
6.0  
100  
mA  
ms  
°C  
Power on to 0.5°/sec of final  
Independent of package type  
TEMPERATURE RANGE  
TMIN, TMAX  
+105  
1 Maximum limit is guaranteed through ADI characterization.  
2 Cross-axis sensitivity specification does not include effects due to device mounting on a printed circuit board (PCB).  
3 Minimum and maximum limits are guaranteed by design.  
Rev. PrA | Page 3 of 28  
 
 
 
 
ADXRS450  
Preliminary Technical Data  
ABSOLUTE MAXIMUM RATINGS  
Table 2.  
RATE SENSITIVE AXIS  
Parameter  
Rating  
2000 g  
2000 g  
−0.3 V to +6.0 V  
Indefinite  
The ADXRS450 is available in two package options. The  
SOIC_CAV package configuration is for applications that  
require a Z-axis (yaw) rate sensing device. The device transmits  
a positive going LSB count for clockwise rotation about the axis  
normal to the package top. Conversely, a negative going LSB  
count is transmitted for counterclockwise rotation about the  
Z-zxis. The vertical mount package (LCC_V) option is for  
applications that require rate sensing in the axes parallel to the  
plane of the PCB (pitch and roll). The same principles of LSB  
count transmission for clockwise and counterclockwise rotation  
about the parallel axes apply to the LCC_V option. See Figure 2  
for details.  
Acceleration (Any Axis, Unpowered, 0.5 ms)  
Acceleration (Any Axis, Powered, 0.5 ms)  
Supply Voltage (PDD)  
Output Short-Circuit Duration (Any Pin to  
Ground)  
Temperature Range  
Operating  
LCC_V Package  
SOIC_CAV Package  
Storage  
−40°C to +125°C  
−40°C to +125°C  
LCC_V Package  
SOIC_CAV Package  
−65°C to +150°C  
−40°C to +150°C  
RATE  
AXIS  
Z-AXIS  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
LONGITUDINAL  
+
AXIS  
7
8
+
1
RATE  
AXIS  
A B C D E F G  
LATERAL AXIS  
A1  
7
1
VMP PACKAGE  
Figure 2. Rate Signal Increases with Clockwise Rotation  
THERMAL RESISTANCE  
ESD CAUTION  
θJA is specified for the worst-case conditions, that is, for a device  
soldered in a printed circuit board (PCB) for surface-mount  
packages.  
Table 3. Thermal Resistance  
Package Type  
16-Lead SOIC_CAV  
14-Lead Ceramic LCC_V  
θJA  
191.5  
185.5  
θJC  
25  
23  
Unit  
°C/W  
°C/W  
Rev. PrA | Page 4 of 28  
 
 
Preliminary Technical Data  
ADXRS450  
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
SCLK  
DV  
DD  
MOSI  
RSVD  
RSVD  
CS  
AV  
DD  
ADXRS450  
DV  
SS  
TOP VIEW  
(Not to Scale)  
MISO  
RSVD  
P
AV  
SS  
DD  
P
RSVD  
CP5  
SS  
VX  
Figure 3. SOIC_CAV Pin Configuration  
Table 4. 14-Lead SOIC_CAV Pin Function Descriptions  
Pin No.  
1
2
3
Mnemonic  
DVDD  
RSVD  
NC  
Description  
Digital Regulated Voltage. See Figure 21 for the applications circuit diagram.  
Reserved. This pin must be connected to DVSS.  
Reserved. This pin must be connected to DVSS.  
Chip Select.  
4
CS  
5
6
7
MISO  
PDD  
PSS  
Master In/Slave Out.  
Supply Voltage.  
Switching Regulator Ground.  
8
9
VX  
CP5  
NC  
AVSS  
NC  
DVSS  
AVDD  
MOSI  
SCLK  
High Voltage Switching Node. See Figure 21 for the applications circuit diagram.  
High Voltage Supply. See Figure 21 for the applications circuit diagram.  
Reserved. This pin must be connected to DVSS.  
Analog Ground.  
Reserved. This pin must be connected to DVSS.  
Digital Signal Ground.  
Analog Regulated Voltage. See Figure 21 for the applications circuit diagram.  
Master Out/Slave In.  
SPI Clock.  
10  
11  
12  
13  
14  
15  
16  
Rev. PrA | Page 5 of 28  
 
ADXRS450  
Preliminary Technical Data  
7
6
5
4
3
2
1
14  
13 12 11 10  
9
6
8
7
1
2
3
4
5
TOP VIEW  
(Not to Scale)  
NC = NO  
8
9
10 11 12 13  
14  
CONNECT  
Figure 4. LCC_V Pin Configuration  
BACK VIEW  
(Not to Scale)  
Figure 5. LCC_V Pin Configuration, Horizontal Layout  
Table 5. 14_Lead LCC_V Pin Function Descriptions  
Pin No.  
Mnemonic  
Description  
1
AVSS  
Analog Ground.  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
AVDD  
MISO  
DVDD  
SCLK  
CP5  
RSVD  
RSVD  
VX  
Analog Regulated Voltage. See Figure 22 for the applications circuit diagram.  
Master In/Slave Out.  
Digital Regulated Voltage. See Figure 22 for the applications circuit diagram.  
SPI Clock.  
High Voltage Supply. See Figure 22 for the applications circuit diagram.  
Reserved. This pin must be connected to DVSS.  
Reserved. This pin must be connected to DVSS.  
High Voltage Switching Node. See Figure 22 for the applications circuit diagram.  
Chip Select.  
CS  
DVSS  
MOSI  
PSS  
Digital Signal Ground.  
Master Out/Slave In.  
Switching Regulator Ground.  
Supply Voltage.  
PDD  
Rev. PrA | Page 6 of 28  
Preliminary Technical Data  
ADXRS450  
TYPICAL PERFORMANCE CHARACTERISTICS  
0.20  
0.18  
0.40  
0.35  
0.30  
0.25  
0.20  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0
0.15  
0.10  
0.05  
0
–2.0 –1.6 –1.2 –0.8 –0.4  
0
0.4 0.8 1.2  
1.6 2.0  
ERROR (°/sec)  
ERROR (°/sec)  
Figure 9. LCC_V Null Error @ 25°C  
Figure 6. SOIC_CAV Null Error @ 25°C  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0
ERROR (°/sec)  
ERROR (°/sec)  
Figure 10. LCC_V Null Drift over Temperature  
Figure 7. SOIC_CAV Null Drift over Temperature  
0.25  
0.20  
0.15  
0.10  
0.05  
0.25  
0.20  
0.15  
0.10  
0.05  
0
0
CHANGE IN SENSITIVITY (%)  
CHANGE IN SENSITIVITY (%)  
Figure 8. SOIC_CAV Sensitivity Error @ 25°C  
Figure 11. LCC_V Sensitivity Error @ 25°C  
Rev. PrA | Page 7 of 28  
 
 
 
ADXRS450  
Preliminary Technical Data  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.45  
0.40  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0
0
CHANGE IN SENSITIVITY (%)  
DRIFT (%)  
Figure 12. SOIC_CAV Sensitivity Drift over Temperature  
Figure 15. LCC_V Sensitivity Drift over Temperature  
1
40  
60  
DUT1  
DUT2  
DUT AVERAGE (°/s)  
REF  
30  
20  
50  
40  
30  
20  
10  
0
0.1  
10  
0
–10  
–20  
–30  
–40  
0.01  
–10  
0.001  
–20  
0
1k  
2k  
3k  
4k  
5k  
6k  
0.1  
0.15  
0.20  
0.25  
0.30  
0.35  
0.40  
VIBRATION FREQUENCY (Hz)  
TIME (sec)  
Figure 13. Typical Response to Random Vibration, 15 g rms, 50 Hz to 5 kHz  
Figure 16. Typical Shock Response  
3
3
2
N = 16  
N = 16  
2
1
0
1
0
–1  
–2  
–3  
–1  
–2  
–3  
–50  
–30  
–10  
10  
30  
50  
70  
90  
110  
–50  
–30  
–10  
10  
30  
50  
70  
90  
110  
DUT TEMPERATURE (°C)  
DUT TEMPERATURE (°C)  
Figure 14. Null Output over Temperature, Device Soldered on PCB  
Figure 17. Sensitivity over Temperature, Device Soldered to PCB  
Rev. PrA | Page 8 of 28  
Preliminary Technical Data  
THEORY OF OPERATION  
The ADXRS450 operates on the principle of a resonator gyro-  
scope. Figure 18 shows a simplified version of one of four  
polysilicon sensing structures. Each sensing structure contains a  
dither frame that is electrostatically driven to resonance. This  
produces the necessary velocity element to produce a Coriolis  
force when experiencing angular rate. In the SOIC_CAV  
package, the ADXRS450 is designed to sense a Z-axis (yaw)  
angular rate; whereas the vertical mount package orients the  
device such that it can sense pitch or roll angular rate on the  
same PCB.  
ADXRS450  
CONTINUOUS SELF-TEST  
The ADXRS450 gyroscope utilizes a complete electro-  
mechanical self test. An electrostatic force is applied to the  
gyroscope frame, resulting in a deflection of the capacitive  
sense fingers. This deflection is exactly equivalent to deflection  
that occurs as a result of external rate input. The output from  
the beam structure is processed by the same signal chain as a  
true rate output signal, providing complete coverage of both the  
electrical and mechanical components.  
The electromechanical self test is performed continuously  
during operation at a rate higher than the output bandwidth of  
the device. The self-test routine generates equivalent positive  
and negative rate deflections. This information can then be  
filtered with no overall effect on the demodulated rate output.  
When the sensing structure is exposed to angular rate, the  
resulting Coriolis force couples into an outer sense frame,  
which contains movable fingers that are placed between fixed  
pickoff fingers. This forms a capacitive pickoff structure that  
senses Coriolis motion. The resulting signal is fed to a series of  
gain and demodulation stages that produce the electrical rate  
signal output. The quad sensor design rejects linear and angular  
acceleration, including external g-forces and vibration. This is  
achieved by mechanically coupling the four sensing structures  
such that external g-forces appear as common-mode signals  
that can be removed by the fully differential architecture  
implemented in the ADXRS450.  
RATE SIGNAL WITH  
CONTINUOUS SELF TEST SIGNAL.  
SELF TEST AMPLITUDE. INTERNALLY  
COMPARED TO THE SPECIFICATION  
TABLE LIMITS.  
LOW FREQUENCY RATE INFORMATION.  
Figure 19. Continuous Self-Test Demodulation  
X
The difference amplitude between the positive and negative  
self-test deflections is filtered to 2 Hz, and continuously  
monitored and compared to hardcoded self-test limits. If the  
measured amplitude exceeds these limits (listed in Table 1), one  
of two error conditions is asserted depending on the magnitude  
of self-test error. For less severe self-test error magnitudes, the  
CST bit of the fault register is asserted; however, the status bits  
(ST[1:0]) in the sensor data response remain set to 0b01 for  
valid sensor data. For more severe self-test errors, the CST bit of  
the fault register is asserted and the status bits (ST[1:0]) in the  
sensor data response are set to 0b00 for invalid sensor data. The  
thresholds for both of these failure conditions are listed in Table  
1. If desired, the user can access the self-test information by  
issuing a read command to the self-test memory register  
(Address 0x04). See the SPI Communication Protocol section  
for more information about error reporting.  
Y
Z
Figure 18. Simplified Gyroscope Sensing Structure  
The resonator requires 22.5 V (typical) for operation. Because  
only 5 V is typically available in most applications, a switching  
regulator is included on-chip.  
Rev. PrA | Page 9 of 28  
 
 
 
ADXRS450  
Preliminary Technical Data  
APPLICATIONS INFORMATION  
CALIBRATED PERFORMANCE  
1
16  
SCLK  
MOSI  
DV  
DD  
1µF  
Each ADXRS450 gyroscope uses internal EEPROM memory to  
store its temperature calibration information. The calibration  
information is encoded into the device during factory test. The  
calibration data is used to perform offset, gain, and self-test  
corrections over temperature. By storing this information  
internally, it removes the burden from the customer of  
performing system level temperature calibration.  
RSVD  
RSVD  
CS  
1µF  
AV  
DV  
DD  
SS  
GND  
3.3V TO 5V  
MISO  
RSVD  
AV  
P
P
V
DD  
SS  
X
SS  
1µF  
RSVD  
CP5  
100nF  
MECHANICAL CONSIDERATIONS FOR MOUNTING  
470µH  
Mount the ADXRS450 in a location close to a hard mounting  
point of the PCB to the case. Mounting the ADXRS450 at an  
unsupported PCB location (that is, at the end of a lever, or in  
the middle of a trampoline), as shown in Figure 20, can result in  
apparent measurement errors, as the gyroscope is subject to the  
resonant vibration of the PCB. Locating the gyroscope near a  
hard mounting point helps to ensure that any PCB resonances  
at the gyroscope are above the frequency at which harmful  
aliasing with the internal electronics can occur. To ensure that  
aliased signals do not couple into the baseband measurement  
range, design the module wherein the first system level  
resonance occurs at a frequency higher than 800 Hz.  
GND  
GND  
DIODE  
>24V BREAKDOWN  
Figure 21. Recommended Applications Circuit, SOIC_CAV Package  
3.3V TO 5V  
TOP VIEW  
1
14  
AV  
AV  
P
DD  
SS  
DD  
1µF  
1µF  
1µF  
P
SS  
MISO  
DV  
MOSI  
DV  
DD  
SS  
SCLK  
CP5  
CS  
VX  
GND  
GYROSCOPE  
100nF  
PCB  
470µH  
RSVD  
RSVD  
GND  
MOUNTING POINTS  
GND  
Figure 20. Incorrectly Placed Gyroscope  
DIODE  
>24V BREAKDOWN  
APPLICATIONS CIRCUITS  
Figure 22. Recommended Applications Circuit, Ceramic LCC_V Package  
Figure 21 and Figure 22 show the recommended application  
circuits for the ADXRS450 gyroscope. These application circuits  
provide a connection reference for the available package types.  
Note that DVDD, AVDD, and PDD are all individually connected to  
ground through 1 μF capacitors; do not connect these supplies  
together. Additionally, an external diode and inductor must be  
connected for proper operation of the internal shunt regulator.  
These components allow for the internal resonator drive voltage  
to reach its required level, as listed in the Specifications section.  
ADXRS450 SIGNAL CHAIN TIMING  
The ADXRS450 primary signal chain is shown in Figure 2±. It is  
the series of necessary functional circuit blocks through which  
the rate data is generated and processed. This sequence of electro-  
mechanical elements determines how quickly the device is capable  
of translating an external rate input stimulus into an SPI word  
to be sent to the master device. The group delay, which is a func-  
tion of the filter characteristic, is the time required for the output  
of the low-pass filter to be within 10% of the external rate input,  
and is seen to be ~4 ms. Additional delay can be observed due  
to the timing of SPI transactions and the population of the rate  
data into the internal device registers. Figure 2± anatomizes this  
delay, wherein the delay through each element of the signal chain  
is presented.  
Table 6.  
Component  
Inductor  
Diode  
Qty  
1
1
Description  
470 ꢀH  
>24 V breakdown voltage  
Capacitor  
Capacitor  
3
1
1 ꢀF  
100 nF  
Rev. PrA | Page 10 of 28  
 
 
 
 
Preliminary Technical Data  
ADXRS450  
The transfer function for the Rate Data LPF is given as  
The transfer function for the Continuous Self-Test LPF is given as  
2
64  
1
1Z  
64 Z1  
1Z1  
where:  
16  
where:  
T =  
= 1ms (typ)  
1
1
T =  
=
f0  
f0 16 kHz (typ)  
PRIMARY SIGNAL CHAIN  
4ms  
GROUP DELAY  
<2.2ms  
DELAY  
ARITHMETIC  
LOGIC UNIT  
<5µs  
DELAY  
<5µs  
DELAY  
<5µs  
DELAY  
RATE DATA  
LPF  
SPI  
BAND-PASS  
FILTER  
ADC 12  
TRANSACTION  
DEMOD  
CONTINUOUS  
SELF-TEST  
LPF  
Z-AXIS ANGULAR  
RATE SENSOR  
<64ms  
GROUP DELAY  
Figure 23. Primary Signal Chain and Associated Delays  
Rev. PrA | Page 11 of 28  
 
ADXRS450  
Preliminary Technical Data  
SPI COMMUNICATION PROTOCOL  
COMMAND/RESPONSE  
Table 7. SPI Signals  
Input°output is handled through a ±2-bit, command°response  
SPI interface. The command set and the format for the interface  
is defined as follows:  
Signal  
Symbol Description  
Serial Clock  
SCLK  
Exactly 32 clock cycles during active  
CS  
Chip Select  
CS  
Active low  
Clock phase = clock polarity = 0  
Master Out  
Slave In  
MOSI  
Data sent to the gyroscope device  
from the main controller  
Data sent to the main controller  
from the gyroscope  
Additionally, the device response to the initial command is  
0x00000001. This prevents the transmission of random data to  
the master device upon the initial command°response exchange.  
Master In  
Slave Out  
MISO  
CS  
32 CLOCK  
CYCLES  
32 CLOCK  
CYCLES  
SCLK  
MOSI  
COMMAND N  
COMMAND N + 1  
RESPONSE N  
MISO  
RESPONSE N – 1  
Figure 24. SPI Protocol  
Table 8. SPI Commands  
Bit  
Command 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10  
9
8
7
6
5
4
3
2
1
0
Sensor  
Data  
SQ1 SQ0 1 SQ2  
CHK P  
Read  
1
0
0
1
0
0
SM2 SM1 SM0 A8 A7 A6 A5 A4 A3 A2 A1 A0  
P
Write  
SM2 SM1 SM0 A8 A7 A6 A5 A4 A3 A2 A1 A0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0  
P
Table 9. SPI Responses  
Bit  
Command 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9  
8
7
6
5
4
3
2
1
0
Sensor  
Data  
SQ2 SQ1 SQ0 P0 ST1 ST0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0  
PLL Q NVM POR PWR CST CHK P1  
Read  
0
0
0
1
0
0
0
1
0
P0 1  
P0 1  
P0 1  
1
1
1
1
1
1
0
0
0
SM2 SM1 SM0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0  
SM2 SM1 SM0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0  
P1  
P1  
Write  
R/W  
SM2 SM1 SM0 0  
0
SPI RE DU  
PLL Q NVM POR PWR CST CHK P1  
Error  
Rev. PrA | Page 12 of 28  
 
 
 
Preliminary Technical Data  
ADXRS450  
Table 10. SPI Command/Response Timing Characteristics  
SPI COMMUNICATIONS CHARACTERISTICS  
Symbol  
Description  
Min  
Max Unit  
Note the following conditions for Table 10:  
fOP  
SPI operating  
frequency  
Clock (SCLK)  
high time  
Clock (SCLK) low  
time  
SCLK period  
Clock (SCLK) fall  
time  
Clock (SCLK) rise  
time  
Data input  
(MOSI) setup  
time  
8.08 MHz  
All minimum and maximum timing values are guaranteed  
through characterization.  
All timing is shown with respect to 10% VDD and 90% of  
the actual delivered voltage waveform.  
All minimum and maximum timing values are valid for  
±.0 V ≤ VDD ≤ 5.5 V.  
tSCLKH  
tSCLKL  
1/2tSCLK − 13  
1/2tSCLK − 13  
ns  
ns  
ns  
tSCLK  
tF  
123.7  
5.5  
13  
13  
ns  
ns  
ns  
Capacitive load for all signals is assumed to be ≤80 pF.  
Ambient temperature is –40ꢀC ≤ TA ≤ +105ꢀC.  
MISO pull-up of 47 kΩ or 110 ꢁA.  
Sequential transfer increases to 17 ms following any write  
operation limited by the EEPROM.  
tR  
5.5  
37  
tSU  
tHIGH  
tA  
Data input  
(MOSI) hold time  
49  
ns  
ns  
Data output  
(MISO) access  
time  
Data output  
(MISO) valid after  
SCLK  
20  
20  
tV  
ns  
tLAG  
tDIS  
Data output  
(MISO) lag time  
Data output  
(MISO) disable  
time  
TBD  
ns  
ns  
40  
tLEAD  
1/2tSCLK  
1/2tSCLK  
ns  
ns  
Enable ( ) lead  
CS  
time  
tLAG_  
Enable ( ) lag  
CS  
CS  
time  
Sequential  
transfer delay  
Gyroscope  
resonant  
tTD  
f0  
0.16  
13  
μs  
19  
kHz  
frequency  
Rev. PrA | Page 13 of 28  
 
 
ADXRS450  
Preliminary Technical Data  
CS  
tSCLK  
f0  
tCS  
tR  
tSCLKH tSCLKL  
tLEAD  
tF  
SCK  
tA  
tLAG  
tV  
tDIS  
MSB  
LSB  
MISO  
tHIGH  
tSU  
MOSI  
MSB  
LSB  
Figure 25. SPI Timings  
preparation for the next sequential command° response  
exchange. This allows for an exceedingly fast sequential transfer  
delay of 0.1 ꢁs (see Table 10). As a design precaution, note that  
the transmitted data is only as recent as the sequential  
transmission delay implemented by the system. Conditions that  
result in a sequential transfer delay of several seconds cause the  
next sequential device response to contain data that is several  
seconds old.  
SPI APPLICATIONS  
Device Data Latching  
To allow for rapid acquisition of data from the ADXRS450,  
device data latching has been implemented in the design, as shown  
in Figure 26. Upon the assertion of chip select ( ), the data  
present in the device is latched into memory. When the full  
MOSI command has been received, and  
CS  
CS  
deasserted, the  
appropriate data is shifted into the SPI port registers in  
DEVICE DATA IS LATCHED AFTER THE  
ASSERTION OF CS. LATCHED DATA IS  
TRANSMITTED DURING THE NEXT  
SEQUENTIAL COMMAND/RESPONSE  
EXCHANGE.  
CS  
32 CLOCK  
CYCLES  
32 CLOCK  
CYCLES  
32 CLOCK  
CYCLES  
SCLK  
COMMAND N  
COMMAND N + 1  
0x…  
COMMAND N + 2  
0x…  
MOSI  
0x…  
RESPONSE N – 1  
0x00000001  
RESPONSE N  
0x…  
RESPONSE N + 1  
0x…  
MISO  
Figure 26. Device Data Latching  
Rev. PrA | Page 14 of 28  
 
 
 
Preliminary Technical Data  
ADXRS450  
during a sensor data request results in the device issuing a  
Command/Response—Bit Definitions  
read°write error.  
Table 11. Quick Guide—Bit Definitions for SPI Interface  
ST1 to ST0  
Bit  
Description  
The status bits (ST1 and ST0) are used to signal to the master  
device the type of data contained in the response message. The  
status bits are decoded as listed in Table 12.  
SQ2 to SQ0  
SM2 to SM0  
A8 to A0  
Sequence bits (from master)  
Sensor module bits (from master)  
Register address  
D15 to D0  
SPI  
ST1 to ST0  
P
P0  
P1  
RE  
DU  
Data  
Table 12. Status Bit Code Definitions  
SPI command/response  
Status bits  
Command odd parity  
Response, odd parity, Bits[31:16]  
Response, odd parity, Bits[31:0]  
Request error  
ST1:ST0  
Content in Bits[D15:D0]  
Error data for sensor data response  
Valid sensor data  
Sensor self-test data  
Read/write response  
00  
01  
10  
11  
Data unavailable  
There are two independent conditions that can result in the ST  
bits being set to 0b00 during a sensor data response: self test or  
PLL. The self test response is sufficiently different from its  
nominal value. Refer to the Specifications section for the  
appropriate limits. When the sensor data response is a PLL, the  
PLL fault is active.  
SQ2 to SQ0  
This field provides the system with a means of synchronizing  
the data samples that are received from multiple sensors. To  
facilitate correct synchronization, the ADXRS450 gyroscope  
includes the SQ[2:0] field in the response sequence as it was  
received in the request.  
P
A parity bit (P) is required for all master-to-slave data  
transmissions. Communications protocol requires one parity bit  
to achieve odd parity for the entire ±2-bit command. Bits that  
are in don’t care positions are still factored into the parity  
calculation.  
SM2 to SM0  
Sensor module bits from master device. These bits have not  
been implemented in the ADXRS450, and are hard coded to be  
000 for all occurrences.  
A8 to A0  
P0  
The A8 to A0 bits represent the memory address from which  
device data is being read, or to which information is to be  
written. These bits should only be supplied by the master when  
the memory registers are being accessed, and are ignored for all  
sensor data requests. Refer to the Memory Register Definitions  
section for a complete description of the available memory  
registers.  
P0 is the parity bit that establishes odd parity for Bits[±1:16] of  
the device response.  
P1  
P1 is the parity bit that establishes odd parity for the entire  
±2-bit device response.  
RE  
D15 to D0  
RE is the communications error bit transmitted from the  
ADXRS450 device to the control module. Request errors can  
occur when  
16-bit device data that can contain any of the following:  
Master: data to be written to a memory register as specified  
in the A8 to A0 section.  
An invalid command is sent from the control module.  
The read°write command specifies an invalid memory  
register.  
Slave: sensor rate output data.  
Slave: device data read from the memory register specified  
in the A8 to A0 section, as well as the data from the next  
sequential register.  
The write command attempted to a nonwriteable memory  
register.  
Slave: For a write command, the 16-bit data that is written  
to the specified memory register reflects back to the master  
device for correlation.  
DU  
As expressed in Table 10, the sequential transfer delay for  
writing data to a memory register (for example, DNC0) results  
in a sequential transfer delay of 17 ms. If a successive write  
command is issued to the device prior to the completion of the  
sequential transfer delay, the command is ignored and the  
device issues a DU error response. However, a read command  
SPI  
The SPI bit sets when any either of the following occur: too  
many°not enough bits are transmitted, or the message from the  
control module contains a parity error. Additionally, any error  
Rev. PrA | Page 15 of 28  
 
 
ADXRS450  
Preliminary Technical Data  
or sensor data request can be issued after a sequential transfer  
delay of only 10 ꢁs is observed. Regardless of the commands  
that are subsequently issued to the device, once a write procedure  
has been initiated, the operation proceeds through to completion  
(requiring 17 ms).  
NVM  
An NVM error transmits to the control module when the  
internal NVM data fails a checksum calculation. This check is  
performed once every 50 ꢁs, and does not include the DNC0 or  
PID memory registers.  
Fault Register Bit Definitions  
POR  
This section describes the bits available for signaling faults to  
the user. The individual bits of the fault register are updated  
asynchronously depending on their respective detection  
criteria; however, it is recommended that the fault register is  
read at a rate of at least 250 Hz. When asserted, the individual  
status bit does not deassert until it is read by the master device.  
If the error persists after a fault register read, the status bit  
immediately reasserts, and remains asserted until the next  
sequential command°response exchange. The full fault register  
is appended to every sensor data request. It can also be accessed  
by issuing a read command to Register 0x0A.  
An internal check is performed on device startup to ensure that  
the volatile memory of the device is functional. This is accom-  
plished by programming a known value from the device ROM  
into a volatile memory register. This value is then continuously  
compared to the known value in ROM every 1 ꢁs for the duration  
of the devices operation. If the value stored in the volatile memory  
changes, or does not match the value stored in ROM, the POR  
error flag is asserted. The value stored in ROM is rewritten to  
the volatile memory upon a device power cycle.  
PWR  
The device performs a continuous check of the internal ± V  
regulated voltage level. If either an overvoltage (OV) or under-  
voltage (UV) fault is asserted, then the PWR bit is also asserted.  
This condition occurs if the regulated voltage is observed to be  
either above ±.± V or below 2.77 V. An internal low-pass filter  
removes high frequency glitching effects to prevent the PWR bit  
from asserting unnecessarily. To determine if the fault is a result  
of an overvoltage or undervoltage condition, the OV and UV  
fault bits must be analyzed.  
Table 13. Quick Guide—Fault Register Bit Definitions  
Bit Name Description  
PLL  
Q
PLL failure  
Quadrature error  
NVM  
POR  
UV  
Amp  
PWR  
CST  
CHK  
OV  
NVM memory fault  
Power-on reset failed to initialize  
Regulator under voltage  
Amplitude detection failure  
Power regulation failed: overvoltage/undervoltage  
Continuous self-test failure  
Check: generate faults  
CST  
The ADXRS450 is designed with continuous self-test functionality.  
Measured self-test amplitudes are compared against the limits  
presented in Table 1. Deviations from this value result in  
reported self-test errors. There are two thresholds for a self-test  
failure.  
Regulator overvoltage  
Fail  
Failure which sets the ST[1:0] bits to 0b00  
PLL  
PLL is the bit indicating that the device has had a failure in the  
phase locked-loop functional circuit block. This occurs when  
the PLL has failed to achieve sync with the resonator structure.  
If the PLL status flag is active, the ST bits of the sensor data  
response set to 0b00, indicating that the response contains  
potentially invalid rate data.  
Self-test value > ±512 LSB from nominal results in an  
assertion of the self-test flag in the fault register  
Self-test value > ±1856 LSB from nominal results in both  
an assertion of the self-test flag in the fault register as well  
as setting the ST[1:0] bits to 0b00, indicating that the rate  
data contained in the sensor data response is potentially  
invalid.  
Q
A Q fault can be asserted based on two independent quadrature  
calculations. Located in the quad memory (Register 0x08) is a  
value corresponding to the total instantaneous quadrature present  
in the device. If this value exceeds 4096 LSB, a Q fault is issued.  
Because quadrature build-up can contribute to an offset error,  
the ADXRS450 has integrated methods for dynamically cancelling  
the effects of quadrature. An internal quadrature accumulator  
records the amount of quadrature correction performed by the  
ADXRS450. Excessive quadrature is associated with offset errors.  
A Q fault is issued once the quadrature error present in the device  
has contributed to an equivalent of 4ꢀ°sec (typical) of rate offset.  
CHK  
The CHK bit is transmitted by the control module to the  
ADXRS450 as a method of generating faults. By asserting the  
CHK bit, the device creates conditions that result in the  
generation of all faults represented through the fault register.  
For example, the self-test amplitude is deliberately altered to  
exceed the fault detection threshold, resulting in a self test error.  
In this way, the device is capable of checking both its ability to  
detect a fault condition, as well as its ability to report that fault  
to the control module.  
Rev. PrA | Page 16 of 28  
 
Preliminary Technical Data  
ADXRS450  
The fault conditions are initiated nearly simultaneously;  
however, the timing for receiving fault codes when the CHK bit  
is asserted is dependent upon the time required to generate  
each unique fault. It takes no more than 50 ms for all of the  
internal faults to be generated, and the fault register updated to  
reflect the condition of the device. Until the CHK bit is cleared,  
the status bits (ST[1:0]) are set to 0b10, indicating that the data  
should be interpreted by the control module as self-test data.  
After the CHK bit is deasserted, the fault conditions require an  
additional 50 ms to decay, and the device to return to normal  
operation. Refer to Figure 21 for the proper methodology for  
asserting the check bit.  
FAIL  
The fail flag is asserted when a condition arises such that the  
ST[0:1] bits are set to 0b00. This indicates that the device has  
experienced a gross failure, and that the sensor data could  
potentially be invalid.  
AMP  
The amp fault bit is asserted when the measured amplitude of  
the silicon resonator has been significantly reduced. This  
condition can occur if the voltage supplied to CP5 has fallen  
below the requirements of the internal voltage regulator. This  
fault bit is ORed with the CST fault such that during a sensor  
data request, the CST bit position represents either an amp  
failure or a CST failure. The full status register can then be read  
from memory to validate the specific failure.  
OV  
The OV fault bit asserts if the internally regulated voltage  
(nominally ± V) is observed to exceed ±.± V. This measurement  
is low-pass filtered to prevent artifacts such as noise spikes from  
asserting a fault condition. When an OV fault has occurred, the  
PWR fault bit is asserted simultaneously. Because the OV fault  
bit is not transmitted as part of a sensor data request, it is  
recommended that the user read back the FAULT1 and FAULT0  
memory registers upon the assertion of a PWR error. This  
allows the user to determine the specific error condition.  
K-Bit Assertion: Recommended Start-Up Routine  
The following diagram illustrates a recommended start-up  
routine that can be implemented by the user. Alternate start-up  
sequences can be employed; however, ensure that the response  
from the ADXRS450 is handled correctly. If implemented  
immediately after power is applied to the device, the total time  
to implement the following fault detection routine is approx-  
imately 200 ms. As described in the Device Data Latching  
section, the data present in the device upon the assertion of the  
UV  
The UV fault bit asserts if the internally regulated voltage  
(nominally ± V) is observed to be less than 2.77 V. This  
measurement is low-pass filtered to prevent artifacts such as  
noise spikes from asserting a fault condition. When a UV fault  
has occurred, the PWR fault bit is asserted simultaneously. As  
the UV fault bit is not transmitted as part of a sensor data  
request, it is recommended that the user read back the FAULT1  
and FAULT0 memory registers upon the assertion of a PWR  
error. This allows the user to determine the specific error  
condition.  
CS  
signal is used in the next sequential command°response  
exchange. This results in an apparent one transaction delay  
before the data resulting from the assertion of the CHK  
command is reported by the device. For all other read°write  
interactions with the device, no such delay exists, and the MOSI  
command is serviced during the next sequential command°  
response exchange. Note that when the CHK bit is deasserted, if  
the user tries to obtain data from the device before the CST  
fault flag has cleared, the device reports the data as error data.  
Rev. PrA | Page 17 of 28  
ADXRS450  
Preliminary Technical Data  
MOSI: SENSOR DATA REQUEST  
MOSI: SENSOR DATA  
REQUEST THIS CLEARS  
THE CHK BIT  
MOSI: SENSOR DATA  
REQUEST  
MOSI: SENSOR DATA  
REQUEST  
CHK COMMAND ASSERTED  
MISO: STANDARD INITIAL  
RESPONSE  
MISO: CHK RESPONSE  
ST[1:0] = 0b10  
MISO: CHK RESPONSE  
ST[1:0] = 0b10  
MISO: SENSOR DATA  
RESPONSE  
DATA LATCH POINT  
CS  
X
X
X
32 CLOCK  
CYCLES  
32 CLOCK  
CYCLES  
32 CLOCK  
CYCLES  
32 CLOCK  
CYCLES  
SCLK  
MOSI  
MISO  
0x2000003  
0x0000001  
0x2000000  
0x…  
0x2000000  
0x2000000  
0x…FF OR 0x…FE  
(PARITY DEPENDENT)  
0x…FF OR 0x…FE  
(PARITY DEPENDENT)  
t = 100ms  
t = 150ms  
t = 200ms  
t = 200ms + tTD  
THE FAULT BITS OF THE  
t = 200ms + 2tTD  
POWER IS  
APPLIED TO  
ONCE THE 100ms START-UP  
TIME HAS OCCURRED, THE  
MASTER DEVICE IS FREE TO  
ASSERT THE CHK  
COMMAND AND START THE  
PROCESS OF INTERNAL  
ERROR CHECKING. DURING  
THE FIRST COMMAND/  
RESPONSE EXCHANGE  
AFTER POWER ON, THE  
ADXRS450 HAS BEEN  
A 50ms DELAY IS REQUIRED  
SO THAT THE GENERATION  
OF FAULTS WITHIN THE  
DEVICE IS ALLOWED TO  
COMPLETE. HOWEVER, AS  
THE DEVICE DATA IS  
LATCHED BEFORE THE CHK  
COMMAND IS ASSERTED,  
THE DEVICE RESPONSE  
DURING THIS  
ANOTHER 50ms DELAY  
NEEDS TO BE OBSERVED TO  
ALLOW THE FAULT  
CONDITIONS TO CLEAR. IF  
THE DEVICE IS FUNCTIONING  
PROPERLY, THE MISO  
RESPONSE CONTAINS ALL  
ACTIVE FAULTS, AS WELL AS  
HAVING SET THE MESSAGE  
FORMAT TO SELF-TEST  
DATA. THIS IS INDICATED  
THROUGH THE ST BITS  
BEING SET TO 0b10.  
ALL FAULT  
ADXRS450 REMAIN ACTIVE  
UNTIL CLEARED. DUE TO  
THE REQUIRED DECAY  
PERIOD FOR EACH FAULT  
CONDITION, FAULT  
CONDITIONS REMAIN  
PRESENT UPON THE  
IMMEDIATE DEASSERTION  
OF THE CHK COMMAND. THIS  
RESULTS IN A SECOND  
SEQUENTIAL RESPONSE IN  
WHICH THE FAULT BITS ARE  
ASSERTED. AGAIN, THE  
RESPONSE IS FORMATTED  
AS SELF-TEST DATA  
CONDITIONS ARE  
CLEARED, AND ALL  
SUBSEQUENT DATA  
EXCHANGES NEED  
ONLY OBSERVE  
THE SEQUENTIAL  
TRANSFER DELAY  
TIMING  
THE DEVICE.  
WAIT 100ms TO  
ALLOW FOR  
THE INTERNAL  
CIRCUITRY TO  
BE INITIALIZED.  
PARAMETER.  
COMMAND/RESPONSE  
EXCHANGE DOES NOT  
CONTAIN FAULT  
DESIGNED TO ISSUE A  
PREDEFINED RESPONSE.  
INFORMATION. THIS  
RESPONSE CAN BE  
DISCARDED.  
INDICATING THAT THE FAULT  
BITS HAVE BEEN SET  
INTENTIONALLY.  
Figure 27. Recommended Startup Sequence  
Rev. PrA | Page 18 of 28  
Preliminary Technical Data  
ADXRS450  
SPI RATE DATA FORMAT  
The ADXRS450 gyroscope transmits rate data in a 16-bit format,  
as part of a ±2-bit SPI data frame. See Table 9 for the full ±2-bit  
format of the sensor data request response. The rate data is trans-  
mitted MSB first, from D15 to D0. The data is formatted as a  
twos complement number, with a scale factor of 80 LSB°ꢀ°sec.  
Therefore, the highest obtainable value for positive (clockwise)  
rotation is 0x7FFF (decimal +±2,767), and for counterclockwise  
rotation is 0x8000 (decimal −±2,768). Performance of the device  
is not guaranteed above ±24,000 LSB (±±00ꢀ°sec).  
Table 14. Rate Data  
14-Bit Rate Data  
Decimal (LSBs)  
+32767  
Hex (D15:D0)  
0x7FFF  
Data Type  
Rate data (not guaranteed)  
Description  
Maximum possible positive data value  
+24000  
0x5DC0  
Rate data  
+300 degrees per second rotation (positive FSR)  
+160  
+80  
0x00A0  
0x0050  
Rate data  
Rate data  
+2 degrees per second rotation  
+1 degree per second rotation  
+40  
+20  
0x0028  
0x0014  
Rate data  
Rate data  
+1/2 degree per second rotation  
+1/4 degree per second rotation  
0
0x 0000  
Rate data  
Zero rotation value  
−20  
−40  
0xFFEC  
0xFFD8  
Rate data  
Rate data  
−1/4 degree per second rotation  
−1/2 degree per second rotation  
−80  
−160  
0xFFB0  
0xFF60  
Rate data  
Rate data  
−1 degree per second rotation  
−2 degree per second rotation  
−24000  
0xA240  
Rate data  
−300 degree per second rotation (negative FSR)  
−32768  
0x8000  
Rate data (not guaranteed)  
Maximum possible negative data value  
Rev. PrA | Page 19 of 28  
 
ADXRS450  
Preliminary Technical Data  
MEMORY MAP AND REGISTERS  
message. This is accomplished by appending the data from the  
next, sequential register to the memory address that was specified.  
Data is transmitted MSB first. For proper acquisition of data from  
the memory register, make the read request to the even numbered  
register address only. Following the memory map (Table 15) is  
the explanation of the significance of each memory register.  
MEMORY MAP  
The following is a list of the memory registers that are available  
to be read from or written to by the customer. See the previous  
section SPI Communication Protocol for the proper input se-  
quence to read°write a specific memory register. Each memory  
register is comprised of 8-bits of data, however, when a read  
request is performed, the data always returns as a 16-bit  
Table 15. Memory Register Map  
Address Register Name MSB  
D6  
D5  
D4  
D3  
D2  
D1  
LSB  
0x00  
0x01  
0x02  
0x03  
0x04  
0x05  
0x06  
0x07  
0x08  
0x09  
0x0A  
0x0B  
0x0C  
0x0D  
0x0E  
0x0F  
0x10  
0x11  
0x12  
0x13  
RATE1  
RATE0  
TEM1  
TEM0  
LO CST1  
LO CST0  
HI CST1  
HI CST0  
QUAD1  
QUAD0  
FAULT1  
FAULT0  
PID1  
RTE15  
RTE14  
RTE13  
RTE12  
RTE11  
RTE10  
RTE9  
RTE8  
RTE7  
RTE6  
RTE5  
RTE4  
RTE3  
RTE2  
RTE1  
RTE0  
TEM9  
TEM8  
TEM7  
TEM6  
TEM5  
TEM4  
TEM3  
(Unused)  
LCST9  
LCST1  
HCST9  
HCST1  
QAD9  
QAD1  
OV  
TEM2  
(Unused)  
LCST8  
LCST0  
HCST8  
HCST0  
QAD8  
QAD0  
UV  
TEM1  
TEM0  
(Unused)  
LCST13  
LCST5  
HCST13  
HCST5  
QAD13  
QAD5  
(Unused)  
LCST12  
LCST4  
HCST12  
HCST4  
QAD12  
QAD4  
(Unused)  
LCST11  
LCST3  
HCST11  
HCST3  
QAD11  
QAD3  
FAIL  
(Unused)  
LCST10  
LCST2  
HCST10  
HCST2  
QAD10  
QAD2  
AMP  
LCST15  
LCST7  
HCST15  
HCST7  
QAD15  
QAD7  
(Unused)  
PLL  
LCST14  
LCST6  
HCST14  
HCST6  
QAD14  
QAD6  
(Unused)  
Q
(Unused)  
NVM  
(Unused)  
POR  
PWR  
CST  
CHK  
0
PIDB15  
PIDB7  
SNB31  
SNB23  
SNB15  
SNB7  
PIDB14  
PIDB6  
SNB30  
SNB22  
SNB14  
SNB6  
PIDB13  
PIDB5  
SNB29  
SNB21  
SNB13  
SNB5  
PIDB12  
PIDB4  
SNB28  
SNB20  
SNB12  
SNB4  
PIDB11  
PIDB3  
SNB27  
SNB19  
SNB11  
SNB3  
PIDB10  
PIDB2  
SNB26  
SNB18  
SNB10  
SNB2  
PIDB9  
PIDB1  
SNB25  
SNB17  
SNB9  
SNB1  
DNCB9  
DNCB1  
PIDB8  
PIDB0  
SNB24  
SNB16  
SNB8  
SNB0  
DNCB8  
DNCB0  
PID0  
SN3  
SN2  
SN1  
SN0  
DNC1  
DNC0  
(Unused)  
DNCB7  
(Unused)  
DNCB6  
(Unused)  
DNCB5  
(Unused)  
DNCB4  
(Unused)  
DNCB3  
(Unused)  
DNCB2  
Rev. PrA | Page 20 of 28  
 
 
Preliminary Technical Data  
ADXRS450  
The LOCST memory registers contain the value of the temperature  
compensated and low-pass filtered continuous self-test delta.  
This value is a measure of the difference between the positive  
and negative self-test deflections and corresponds to the values  
presented in Table 1. The device issues a CST error if the value  
of self test exceeds the established self-test limits. The self-test  
data is filtered to 2 Hz to prevent false triggering of the CST  
fault bit. The data is presented as a 16-bit, twos complement  
number, with a scale factor of 80 LSB°ꢀ°sec.  
MEMORY REGISTER DEFINITIONS  
The SPI accessible memory registers are described in this section.  
As explained in the previous section, when requesting data  
from a memory register, only the first sequential memory  
address need be addressed. The data returned by the device  
contain 16 bits of memory register information. Bits[15:8]  
contain the MSB of the requested information, and Bits[7:0]  
contain the LSB.  
Rate Registers  
MSB  
D15  
D7  
LSB  
D8  
Addresses:  
0x00 (Rate1)  
0x01 (Rate0)  
D14  
D6  
D13  
D5  
D12  
D4  
D11  
D3  
D10  
D2  
D9  
D1  
D0  
Register update rate: 500 Hz  
High CST (HICST) Memory Registers  
Scale factor:  
80 LSB°ꢀ°sec  
Addresses:  
0x06 (HICST1),  
0x07 (HICST0)  
The rate registers contain the temperature compensated rate  
output of the device filtered to 80 Hz. This data can also be  
accessed by issuing a sensor data read request to the device. The  
data is presented as a 16-bit, twos complement number.  
Register update rate: 1000 Hz  
Scale factor: 80 LSB°ꢀ°sec  
The HICST register contains the unfiltered self-test information.  
The HICST data can be used to supplement fault diagnosis in  
safety critical applications as sudden shifts in the self-test  
response can be detected. However, the CST bit of the fault  
register is not set when the HICST data is observed to exceed  
the self-test limits. Only the LOCST memory registers, which  
are designed to filter noise and the effects of sudden temporary  
self-test spiking due to external disturbances, control the  
assertion of the CST fault bit. The data is presented as a 16-bit,  
twos complement number.  
MSB  
D15  
D7  
LSB  
D8  
D14  
D6  
D13  
D5  
D12  
D4  
D11  
D3  
D10  
D2  
D9  
D1  
D0  
Temperature (TEMx) Registers  
Addresses:  
0x02 (TEM1),  
0x0± (TEM0)  
Register update rate: 500 Hz  
Scale factor: 5 LSB°ꢀC  
The TEM register contains a value corresponding to the  
temperature of the device. The data is presented as a 10-bit,  
twos complement number. 0 LSB corresponds to a temperature  
of approximately 45ꢀC.  
MSB  
D15  
D7  
LSB  
D8  
D14  
D6  
D13  
D5  
D12  
D4  
D11  
D3  
D10  
D2  
D9  
D1  
D0  
Quad Memory Registers  
MSB  
D9  
LSB  
D2  
Addresses:  
0x08 (QUAD1)  
0x09 (QUAD0)  
D8  
D0  
D7  
D6  
D5  
(Unused)  
D4  
D3  
D1  
Register update rate: 250 Hz  
Scale factor: 80 LSB°ꢀ°sec equivalent  
Table 16.  
Temperature  
45°C  
85°C  
0°C  
Value of TEM1:TEM0  
0000 0000 00XX XXXX  
0011 0010 00XX XXXX  
1100 0111 11XX XXXX  
The quad memory registers contain a value corresponding to  
the amount of quadrature error present in the device at a given  
time. Quadrature can be likened to a measurement of the error  
of the motion of the resonator structure, and can be caused by  
stresses and aging effects. The quadrature data is filtered to  
80 Hz and can be read frequently to detect sudden shifts in the  
level of quadrature. The data is presented as a 16-bit, twos  
complement number.  
Low CST (LOCST) Memory Registers  
Addresses:  
0x04 (LOCST1)  
0x05 (LOCST0)  
Register update rate: 1000 Hz  
Scale factor: 80 LSB°ꢀ°sec  
MSB  
D15  
D7  
LSB  
D8  
D14  
D6  
D13  
D5  
D12  
D4  
D11  
D3  
D10  
D2  
D9  
D1  
D0  
Rev. PrA | Page 21 of 28  
 
 
 
ADXRS450  
Preliminary Technical Data  
Fault Registers  
Serial Number (SN) Registers  
Addresses:  
0x0A (FAULT1)  
0x0B (FAULT0)  
Addresses:  
0x0E (SN±)  
0x0F (SN2)  
0x10 (SN1)  
0x11 (SN0)  
Register update rate: Not applicable  
Scale factor: Not applicable  
The fault register contains the state of the error flags in the  
device. The FAULT0 register is appended to the end of every  
device data transmission (see Table 1±); however, this register  
can also be accessed independently through its memory  
location. The individual fault bits are updated asynchronously,  
requiring <5 ꢁs to activate, as soon as the fault condition exists  
on-chip. When toggled, each fault bit remains active until the  
fault register is read or a sensor data command is received. If  
the fault is still active after the bit is read, the fault bit  
immediately reasserts itself.  
Register update rate: Not applicable  
Scale factor: Not applicable  
The serial number registers contain a ±2-bit identification number  
that uniquely identifies the device. To read the entire serial  
number, two memory read requests must be initiated. The first  
read request to Register 0x0E returns the upper 16 bits of the  
serial number, and the following read request to Register 0x10  
returns the lower 16 bits of the serial number.  
MSB  
D31  
D23  
D15  
D7  
LSB  
D24  
D16  
D8  
D30  
D22  
D14  
D6  
D29  
D21  
D13  
D5  
D28  
D20  
D12  
D4  
D27  
D19  
D11  
D3  
D26  
D18  
D10  
D2  
D25  
D17  
D9  
MSB  
LSB  
UV  
0
(Unused)  
Q NVM POR  
FAIL  
AMP OV  
CHK  
PLL  
PWR ST  
D1  
D0  
Part ID (PID) Registers  
Addresses: 0x0C (PID1)  
0x0D (PID0)  
Register update rate: Not applicable  
Scale factor: Not applicable  
The part identification registers contain a 16-bit number  
identifying the version of the ADXRS450. Combined with the  
serial number, this information allows for a higher degree of  
device individualization and tracking. The initial product ID is  
R01 (0x5201), with subsequent versions of silicon incrementing  
this value to R02, R0±, and so forth.  
Dynamic Null Correction (DNC) Registers  
Addresses:  
0x12 (DNC1)  
0x1± (DNC0)  
Register update rate: Not applicable  
Scale factor: 80 LSB°ꢀ°sec  
The dynamic null correction register is the only register with  
write access available to the user. The user can make small  
adjustments to the rateout of the device by asserting these bits.  
This 10-bit register allows the user to adjust the static rateout of  
the device by up to ±6.4ꢀ°sec.  
MSB  
LSB  
D8  
MSB  
D15  
D7  
LSB  
D8  
(Unused)  
D5 D4  
D9  
D1  
D14  
D6  
D13  
D5  
D12  
D4  
D11  
D3  
D10  
D2  
D9  
D1  
D7  
D6  
D3  
D2  
D0  
D0  
Rev. PrA | Page 22 of 28  
Preliminary Technical Data  
ADXRS450  
PACKAGE ORIENTATION AND LAYOUT INFORMATION  
14  
8
1
7
Figure 28. 14-Lead Ceramic LCC_V Vertical Mount  
11.232  
0.55  
0.55  
0.55  
0.95  
0.95  
1.55  
1.55  
1.27  
2.55  
9.462  
0.572  
5.55  
2.55  
1.691  
1.5  
1
1
1.5  
0.8  
0.8  
Figure 30. LCC_V Solder Pad Layout, Dimensions Shown In Millimeters,  
Not To Scale  
Figure 29. Sample SOIC_CAV Solder Pad Layout (Land Pattern), Dimensions  
Shown In Millimeters, Not To Scale  
Rev. PrA | Page 23 of 28  
 
ADXRS450  
Preliminary Technical Data  
1.50  
0.90  
0.50  
3.10  
7.70  
2.70  
1.00  
1.50  
0.80  
Figure 31. Sample LCC_V Solder Pad Layout for  
Horizontal Mounting, Dimensions Shown In Millimeters, Not To Scale  
Rev. PrA | Page 24 of 28  
Preliminary Technical Data  
ADXRS450  
SOLDER PROFILE  
SUPPLIER T T  
P
C
USER T T  
P
C
T
C
T
–5°C  
C
SUPPLIER tP  
USER tP  
T
P
T
–5°C  
C
tP  
MAXIMUM RAMP-UP RATE = 3°C/sec  
MAXIMUM RAMP-DOWN RATE = 6°C/sec  
T
L
T
PREHEAT AREA  
SMAX  
tL  
T
SMIN  
tS  
25  
TIME 25°C TO PEAK  
TIME  
Figure 32. Recommended Soldering Profile  
Conditions  
Pb-Free  
Profile Feature  
Sn63/Pb37  
Average Ramp Rate (TL to TP)  
Preheat  
3°C/sec maximum  
Minimum Temperature (TSMIN  
)
100°C  
150°C  
60 sec to 120 sec  
150°C  
200°C  
60 sec to 120 sec  
Maximum Temperature (TSMAX  
Time (TSMIN to TSMAX) (tS)  
TSMAX to TL  
)
Ramp-Up Rate  
3°C/sec maximum  
217°C  
Time Maintained above Liquidous (TL)  
Liquidous Temperature (TL)  
Time (tL)  
183°C  
60 sec to 150 sec  
240°C + 0°C/−5°C  
10 sec to 30 sec  
60 sec to 150 sec  
Peak Temperature (TP)  
260°C + 0°C/−5°C  
20 sec to 40 sec  
Time Within 5°C of Actual Peak Temperature (tP)  
Ramp-Down Rate  
6°C/sec maximum  
8 minutes maximum  
Time 25°C to Peak Temperature  
6 minutes maximum  
Rev. PrA | Page 25 of 28  
 
ADXRS450  
Preliminary Technical Data  
PACKAGE MARKING CODES  
XRS450  
BEYZ n  
#YYWW  
XRS450  
BRGZ n  
#YYWW  
LLLLLLLLL  
LLLLLLLLL  
Figure 33. LCC_V and SOIC_CAV Package Marking Codes  
Table 17. Package Code Designations  
Marking  
Significance  
XRS  
Angular rate sensor  
450  
Series number  
B
RG  
EY  
Z
Temperature Grade (−40°C to +105°C)  
Package designator (SOIC_CAV package)  
Package designator (LCC_V package)  
RoHS compliant  
n
Revision number  
#
Pb-Free designation  
YYWW  
LLLLLLLLL  
Assembly date code  
Assembly lot code (up to 9 characters)  
Rev. PrA | Page 26 of 28  
 
Preliminary Technical Data  
OUTLINE DIMENSIONS  
ADXRS450  
10.30 BSC  
16  
1
9
8
DETAIL A  
10.42  
BSC  
7.80  
BSC  
0.25 GAGE  
PLANE  
PIN 1  
INDICATOR  
8°  
4°  
0°  
1.27 BSC  
0.87  
0.77  
0.67  
9.59 BSC  
3.73  
3.58  
3.43  
1.50  
1.35  
1.20  
0.28  
0.18  
0.08  
0.58  
0.48  
0.38  
0.50  
0.45  
0.40  
DETAIL A  
0.75  
0.70  
0.65  
COPLANARITY  
0.10  
Figure 34. 16-Lead Small Outline, Plastic Cavity Package [SOIC_CAV]  
(RG-16-1)  
Dimensions shown in millimeters  
FRONT VIEW  
9.20  
4.40  
4.00  
3.60  
9.00 SQ  
8.80  
8.08  
8.00  
7.92  
0.350  
0.305  
0.260  
0.275  
REF  
BACK VIEW  
7.70  
7.55  
7.40  
7.18  
7.10  
7.02  
0.50  
TYP  
DO NOT SOLDER  
CENTER PADS.  
1
2
3
4
5
6
7
8
9
10 11 12  
13  
14  
1.175  
REF  
C 0.30  
REF  
SIDE VIEW  
R 0.20  
REF  
1.00  
0.675 NOM  
0.500 MIN  
1.60  
(PINS 1, 7)  
(PINS 2, 6)  
1.50  
(PINS 2, 6)  
1.00  
0.60  
(PINS 9-10,  
12-13)  
(PINS 3-5)  
0.30  
REF  
0.80  
(PINS 10,  
11, 12)  
0.30  
REF  
0.35  
REF  
1.70  
REF  
(ALL PINS)  
1
2
3
4
5
6
9
7
8
0.35  
REF  
14  
13  
12 11 10  
1.70  
REF  
0.80 REF  
(ALL PINS)  
(METALLIZATION BUMP  
BUMP HEIGHT 0.03 NOM)  
1.40  
0.80  
(PINS 1,  
(PINS 2, 6,  
9, 13)  
7, 8, 14)  
0.40  
(PINS 3-5, 10-12)  
BOTTOM VIEW (PADS SIDE)  
Figure 35. 14-Terminal Ceramic Leadless Chip Carrier [LCC_V]  
(EY-14-1)  
Dimensions shown in millimeters  
Rev. PrA | Page 27 of 28  
 
ADXRS450  
Preliminary Technical Data  
ORDERING GUIDE  
Temperature  
Range  
Package  
Option  
RG-16-1  
RG-16-1  
EY-14-1  
LCC_14  
Model1  
Package Description  
16-Lead SOIC_CAV  
16-Lead SOIC_CAV  
14-Terminal LCC_V  
14-Lead LCC  
ADXRS450BRGZ  
ADXRS450BRGZ-RL  
ADXRS450BEYZ  
ADXRS450BEYZ-RL  
EVAL-ADXRS450Z  
EVAL-ADXRS450Z-M  
–40°C to +105°C  
–40°C to +105°C  
–40°C to +105°C  
–40°C to +105°C  
Evaluation Board  
Analog Devices Inertial Sensor Evaluation System, Includes ADXRS450  
Satellite  
EVAL-ADXRS450Z-S  
ADXRS450 Satellite, Standalone  
1 Z = RoHS Compliant Part.  
©2010 Analog Devices, Inc. All rights reserved. Trademarks and  
registered trademarks are the property of their respective owners.  
PR08952-0-4/10(PrA)  
Rev. PrA | Page 28 of 28  
 

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