ADR431TRZ-EP-R7 [ADI]
Ultralow Noise XFET® Voltage References with Current Sink and Source Capability;
| 型号： | ADR431TRZ-EP-R7 |
| 厂家： | 
ADI |
| 描述： | Ultralow Noise XFET® Voltage References with Current Sink and Source Capability 光电二极管 |
| 文件： | 总8页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low Noise XFET Voltage References with
Current Sink and Source Capability
ADR431-EP/ADR434-EP/ADR435-EP
FEATURES
PIN CONFIGURATION
Low noise (0.1 Hz to 10.0 Hz): 3.5 μV p-p @ 2.5 VOUT (ADR431-EP)
No external capacitor required
Low temperature coefficient
T Grade: 3 ppm/°C maximum (ADR434-EP/ADR435-EP)
T Grade: 5 ppm/°C maximum (ADR431-EP)
Load regulation: 15 ppm/mA
ADR431-EP/
ADR434-EP/
ADR435-EP
1
2
3
4
8
7
6
5
TP
TP
V
COMP
IN
V
NC
OUT
TOP VIEW
(Not to Scale)
TRIM
GND
NOTES
1. NC = NO CONNECT.
2. TP = TEST PIN (DO NOT CONNECT).
Line regulation: 20 ppm/V
Wide operating range: 4.5 V to 18 V (ADR431-EP)
High output source and sink current: +10 mA and −10 mA
Figure 1. 8-Lead SOIC_N (R-8)
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications (AQEC
standard)
Military temperature range (−55°C to +125°C)
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request
APPLICATIONS
Precision data acquisition systems
High resolution data converters
Optical control circuits
Precision instruments
GENERAL DESCRIPTION
The ADR431-EP/ADR434-EP/ADR435-EP have the capability
to source up to 10 mA of output current and sink up to −10 mA.
They also come with a trim terminal to adjust the output
voltage over a 0.5% range without compromising performance.
The ADR431-EP/ADR434-EP/ADR435-EP are XFET® voltage
references featuring low noise, high accuracy, and low temperature
drift performance. Using Analog Devices, Inc., patented temperature
drift curvature correction and XFET (eXtra implanted junction
FET) technology, voltage change vs. temperature nonlinearity in
the ADR431-EP/ADR434-EP/ADR435-EP is minimized.
The ADR431-EP/ADR434-EP/ADR435-EP are available in an
8-lead narrow SOIC package and are specified over the military
temperature range of −55°C to +125°C.
The XFET references operate at lower current (800 μA) and
lower supply voltage headroom (2 V) than buried Zener
references. Buried Zener references require more than 5 V
headroom for operation. The ADR431-EP/ADR434-EP/
ADR435-EP XFET references are optimal low noise solutions
for 5 V systems.
Additional application and technical information can be found
in the ADR430/ADR431/ADR433/ADR434/ADR435/ADR439
data sheet.
Table 1. Selection Guide
Output
Voltage (V) (mV)
Accuracy Temperature
Model
Coefficient (ppm/°C)
ADR431T-EP 2.500
ADR434T-EP 4.096
ADR435T-EP 5.000
1.0
1.5
2.0
5
3
3
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks arethe property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Fax: 781.461.3113
www.analog.com
©2010 Analog Devices, Inc. All rights reserved.
ADR431-EP/ADR434-EP/ADR435-EP
TABLE OF CONTENTS
ADR435-EP Electrical Characteristics.......................................5
Absolute Maximum Ratings ............................................................6
Thermal Resistance.......................................................................6
ESD Caution...................................................................................6
Typical Performance Characteristics ..............................................7
Outline Dimensions..........................................................................8
Ordering Guide .............................................................................8
Features .............................................................................................. 1
Enhanced Product Features ............................................................ 1
Applications....................................................................................... 1
Pin Configuration............................................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
ADR431-EP Electrical Characteristics...................................... 3
ADR434-EP Electrical Characteristics...................................... 4
REVISION HISTORY
8/10—Rev. 0 to Rev. A
Added ADR431-EP ....................................................... Throughout
Added ADR435-EP ....................................................... Throughout
Changes to Ordering Guide ............................................................ 8
7/10—Revision 0: Initial Version
Rev. A | Page 2 of 8
ADR431-EP/ADR434-EP/ADR435-EP
SPECIFICATIONS
ADR431-EP ELECTRICAL CHARACTERISTICS
VIN = 4.5 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
OUTPUT VOLTAGE
T Grade
VO
2.499 2.500 2.501
V
INITIAL ACCURACY
T Grade
VOERR
TCVO
1.0
0.04
mV
%
TEMPERATURE COEFFICIENT
T Grade
−55°C < TA < +125°C
1.5
5
5
ppm/°C
ppm/V
ppm/mA
ppm/mA
μA
LINE REGULATION
LOAD REGULATION
ΔVO/ΔVIN VIN = 4.5 V to 18 V, −55°C < TA < +125°C
20
15
15
800
ΔVO/ΔIL
ΔVO/ΔIL
IIN
IL = 0 mA to 10 mA, VIN = 5 V, −55°C < TA < +125°C
IL = −10 mA to 0 mA, VIN = 5 V, −55°C < TA < +125°C
QUIESCENT CURRENT
No load, −55°C < TA < +125°C
0.1 Hz to 10.0 Hz
1 kHz
580
3.5
80
VOLTAGE NOISE
eN p-p
eN
μV p-p
nV/√Hz
μs
VOLTAGE NOISE DENSITY
TURN-ON SETTLING TIME
LONG-TERM STABILITY1
OUTPUT VOLTAGE HYSTERESIS
RIPPLE REJECTION RATIO
SHORT CIRCUIT TO GND
tR
CL = 0 μF
10
∆VO
1000 hours
40
ppm
ppm
dB
VO_HYS
RRR
ISC
20
fIN = 1 kHz
−70
40
mA
SUPPLY VOLTAGE OPERATING RANGE VIN
SUPPLY VOLTAGE HEADROOM VIN − VO
4.5
2
18
V
V
1 The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
Rev. A | Page 3 of 8
ADR431-EP/ADR434-EP/ADR435-EP
ADR434-EP ELECTRICAL CHARACTERISTICS
VIN = 6.1 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
OUTPUT VOLTAGE
T Grade
VO
4.0945 4.096 4.0975
V
INITIAL ACCURACY
T Grade
VOERR
TCVO
1.5
0.04
mV
%
TEMPERATURE COEFFICIENT
T Grade
−55°C < TA < +125°C
1
5
3
ppm/°C
ppm/V
ppm/mA
ppm/mA
μA
LINE REGULATION
LOAD REGULATION
ΔVO/ΔVIN VIN = 6.1 V to 18 V, −55°C < TA < +125°C
20
15
15
800
ΔVO/ΔIL
ΔVO/ΔIL
IIN
IL = 0 mA to 10 mA, VIN = 7 V, −55°C < TA < +125°C
IL = −10 mA to 0 mA, VIN = 7 V, −55°C < TA < +125°C
QUIESCENT CURRENT
No load, −55°C < TA < +125°C
0.1 Hz to 10.0 Hz
1 kHz
595
6.25
100
10
VOLTAGE NOISE
eN p-p
eN
μV p-p
nV/√Hz
μs
VOLTAGE NOISE DENSITY
TURN-ON SETTLING TIME
LONG-TERM STABILITY1
OUTPUT VOLTAGE HYSTERESIS
RIPPLE REJECTION RATIO
SHORT CIRCUIT TO GND
SUPPLY VOLTAGE OPERATING RANGE
SUPPLY VOLTAGE HEADROOM
tR
CL = 0 μF
∆VO
1000 hours
40
ppm
ppm
dB
VO_HYS
RRR
20
fIN = 1 kHz
−70
40
ISC
mA
VIN
6.1
2
18
V
VIN − VO
V
1 The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
Rev. A | Page 4 of 8
ADR431-EP/ADR434-EP/ADR435-EP
ADR435-EP ELECTRICAL CHARACTERISTICS
VIN = 7.0 V to 18 V, IL = 0 mA, TA = 25°C, unless otherwise noted.
Table 4.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
OUTPUT VOLTAGE
T Grade
VO
4.998 5.000 5.002
V
INITIAL ACCURACY
T Grade
VOERR
TCVO
2.0
0.04
mV
%
TEMPERATURE COEFFICIENT
T Grade
−55°C < TA < +125°C
1
5
3
ppm/°C
ppm/V
ppm/mA
ppm/mA
μA
LINE REGULATION
LOAD REGULATION
ΔVO/ΔVIN VIN = 7.0 V to 18 V, −55°C < TA < +125°C
20
15
15
800
ΔVO/ΔIL
ΔVO/ΔIL
IIN
IL = 0 mA to 10 mA, VIN = 8 V, −55°C < TA < +125°C
IL = −10 mA to 0 mA, VIN = 8 V, −55°C < TA < +125°C
QUIESCENT CURRENT
No load, −55°C < TA < +125°C
0.1 Hz to 10.0 Hz
1 kHz
620
8
VOLTAGE NOISE
eN p-p
eN
μV p-p
nV/√Hz
μs
VOLTAGE NOISE DENSITY
TURN-ON SETTLING TIME
LONG-TERM STABILITY1
OUTPUT VOLTAGE HYSTERESIS
RIPPLE REJECTION RATIO
SHORT CIRCUIT TO GND
115
10
tR
CL = 0 μF
∆VO
1000 hours
40
ppm
ppm
dB
VO_HYS
RRR
ISC
20
fIN = 1 kHz
−70
40
mA
SUPPLY VOLTAGE OPERATING RANGE VIN
SUPPLY VOLTAGE HEADROOM VIN − VO
7.0
2
18
V
V
1 The long-term stability specification is noncumulative. The drift in subsequent 1000 hour periods is significantly lower than in the first 1000 hour period.
Rev. A | Page 5 of 8
ADR431-EP/ADR434-EP/ADR435-EP
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 5.
Parameter
Rating
Supply Voltage
20 V
Indefinite
−65°C to +125°C
−55°C to +125°C
−65°C to +150°C
300°C
Table 6. Thermal Resistance
Package Type
Output Short-Circuit Duration to GND
Storage Temperature Range
Operating Temperature Range
Junction Temperature Range
Lead Temperature, Soldering (60 sec)
θJA
θJC
Unit
8-Lead SOIC_N (R)
130
43
°C/W
ESD CAUTION
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rev. A | Page 6 of 8
ADR431-EP/ADR434-EP/ADR435-EP
TYPICAL PERFORMANCE CHARACTERISTICS
5 V, CL = 5 pF, G = 2, RG = RF = 1 kΩ, RL = 2 kΩ, VO = 2 V p-p, f = 1 MHz, TA = 25°C, unless otherwise noted.
0.80
0.75
0.70
0.65
+125°C
0.60
+25°C
–55°C
0.55
0.50
0.45
0.40
0.35
0.30
6
8
10
12
14
16
18
INPUT VOLTAGE (V)
Figure 2. Supply Current vs. Temperature
Rev. A | Page 7 of 8
ADR431-EP/ADR434-EP/ADR435-EP
OUTLINE DIMENSIONS
5.00 (0.1968)
4.80 (0.1890)
8
1
5
4
6.20 (0.2441)
5.80 (0.2284)
4.00 (0.1574)
3.80 (0.1497)
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
BSC
45°
1.75 (0.0688)
1.35 (0.0532)
0.25 (0.0098)
0.10 (0.0040)
8°
0°
0.51 (0.0201)
0.31 (0.0122)
COPLANARITY
0.10
1.27 (0.0500)
0.40 (0.0157)
0.25 (0.0098)
0.17 (0.0067)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-AA
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
Figure 3. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body
(R-8)
Dimensions shown in millimeters and (inches)
ORDERING GUIDE
Initial
Accuracy,
Temperature
Coefficient
Output
Voltage (V)
Temperature
Range
Package
Description
Package Ordering
Model1
(mV) (%)
Package (ppm/°C)
Option
Quantity
ADR431TRZ-EP
ADR431TRZ-EP-R7
ADR434TRZ-EP
ADR434TRZ-EP-R7
ADR435TRZ-EP
ADR435TRZ-EP-R7
2.500
2.500
1.0
1.0
1.5
1.5
2.0
2.0
0.04
0.04
0.04
0.04
0.04
0.04
5
5
3
3
3
3
−55°C to +125°C
−55°C to +125°C
−55°C to +125°C
−55°C to +125°C
−55°C to +125°C
−55°C to +125°C
8-Lead SOIC_N
8-Lead SOIC_N
8-Lead SOIC_N
8-Lead SOIC_N
8-Lead SOIC_N
8-Lead SOIC_N
R-8
R-8
98
1,000
98
1,000
98
1,000
4.096
4.096
R-8
R-8
5.000
5.000
R-8
R-8
1 Z = RoHS Compliant Part.
©2010 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D09218-0-8/10(A)
Rev. A | Page 8 of 8
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